Coating, Forming Or Etching By Sputtering Patents (Class 204/192.1)
  • Patent number: 10388520
    Abstract: A method of forming an oxide semiconductor includes a step of depositing an oxide semiconductor layer over a substrate by using a sputtering apparatus in which in a target containing indium, an element M (aluminum, gallium, yttrium, or tin), zinc, and oxygen, the substrate which faces a surface of the target, and a magnet unit comprising a first magnet and a second magnet on a rear surface side of the target are provided. In the method, deposition is performed under a condition that a maximum intensity of a horizontal magnetic field is greater than or equal to 350 G and less than or equal to 2000 G in a plane where a vertical distance toward the substrate from a surface of the magnet unit is 10 mm.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: August 20, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akihisa Shimomura, Yuhei Sato, Yasumasa Yamane, Yoshinori Yamada, Tetsunori Maruyama
  • Patent number: 10388533
    Abstract: Methods for depositing a low resistivity nickel silicide layer used in forming an interconnect and electronic devices formed using the methods are described herein. In one embodiment, a method for depositing a layer includes positioning a substrate on a substrate support in a processing chamber, the processing chamber having a nickel target and a silicon target disposed therein, the substrate facing portions of the nickel target and the silicon target each having an angle of between about 10 degrees and about 50 degrees from the target facing surface of the substrate, flowing a gas into the processing chamber, applying an RF power to the nickel target and concurrently applying a DC power to the silicon target, concurrently sputtering silicon and nickel from the silicon and nickel targets, respectively, and depositing a NixSi1-x layer on the substrate, where x is between about 0.01 and about 0.99.
    Type: Grant
    Filed: May 24, 2018
    Date of Patent: August 20, 2019
    Assignee: Applied Materials, Inc.
    Inventors: He Ren, Minrui Yu, Mehul B. Naik
  • Patent number: 10378145
    Abstract: The present invention provides a textile metallized on at least one of its faces comprising a textile layer of inorganic fibers and a metallic layer, the textile being characterized in that the connection between the textile layer and the metallic layer is provided by a polymeric intermediate layer formed by a matrix having at least one coupling polymer in which at least one flame retardant agent is distributed, said coupling polymer being bonded by chemical bonds firstly to the textile layer and secondly to the metallic layer. The present invention also provides the method of fabricating this metallized textile.
    Type: Grant
    Filed: November 17, 2014
    Date of Patent: August 13, 2019
    Assignee: MERMET
    Inventors: Alain Crouzet, Francois-Xavier Damour
  • Patent number: 10373811
    Abstract: A system and method for single magnetron sputtering are described. One example includes a system having a power supply, a plasma chamber enclosing a substrate, an anode, and a target for depositing a thin film material on the substrate. This example also has a datastore with uncoated anode characterization data and an anode sputtering adjustment system including an anode analysis component to generate a first health value. The first health value is indicative of whether the anode is coated with a dielectric material. This example also has an anode power controller to receive the first health value and provide an anode-energy-control signal to the pulse controller of the pulsed DC power supply to adjust a second anode sputtering energy relative to a first anode sputtering energy to eject at least a portion of the dielectric material from the anode.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: August 6, 2019
    Inventors: David Christie, Skip B. Larson
  • Patent number: 10365530
    Abstract: A window assembly includes an electro-optic element which has a first substantially transparent substrate defining first and second surfaces. The second surface includes a first electrically conductive layer. A second substantially transparent substrate defines third and fourth surfaces. The third surface includes a second electrically conductive layer. A primary seal is disposed between the first and second substrates. The seal and the first and second substrates define a cavity therebetween. An electro-optic medium is disposed in the cavity. The electro-optic medium is switchable such that the electro-optic element is operable between substantially clear and darkened states. An absorptive layer is positioned on the fourth surface of the electro-optic element and a reflective layer is positioned on the absorptive layer.
    Type: Grant
    Filed: September 27, 2017
    Date of Patent: July 30, 2019
    Inventor: William L. Tonar
  • Patent number: 10359804
    Abstract: The described embodiments relate generally to methods to form magnetic assemblies. In particular, extreme cold work (aka cold spray) is used to enhance magnetic properties of a steel alloy (most notably 316L stainless steel and others) that can then be formed into useful shapes and embedded within a substrate without undue machining operations.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: July 23, 2019
    Assignee: Apple Inc.
    Inventors: Bradley J. Hamel, Simon Regis Louis Lancaster-Larocque, Steven J. Osborne, Adam T. Garelli
  • Patent number: 10332730
    Abstract: A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: June 25, 2019
    Assignee: AES Global Holdings, PTE. LTD
    Inventor: David Christie
  • Patent number: 10319617
    Abstract: A process system includes a substrate, first wafers, second wafers, and a roller. The first wafers are arranged at predetermined intervals along a first column which is parallel to an edge of the substrate, wherein each of the first wafers includes first chips. The second wafers are arranged at the predetermined intervals and at an offset from the first wafers, along a second column which is parallel to the first column, wherein each of the second wafers includes second chips. The roller is configured to roll in a first direction to pick up the plurality of first chips, roll in a second direction opposite to the first direction while suspended from the first wafers, pick up the second chips included in the wafers by rolling in the first direction, and transport the first chips and the second chips to the substrate.
    Type: Grant
    Filed: September 7, 2016
    Date of Patent: June 11, 2019
    Inventor: Sang-moo Park
  • Patent number: 10317088
    Abstract: A triple ring flame burner composed of a central burner and a toroidal burner that are coupled by a bridge, the central burner comprises a Venturi tube, a mixture chamber, a distribution channel with the toroidal burner composed of a second Venturi tube, a second mixture chamber, a second distribution channel, a stability and flame transfer chamber with a pair of radial walls which divide the distribution channel from the inner crenellated wall to the outer crenellated wall, said radial walls present a plurality of combustion ports that transfer the flame inserted within said radial walls, the inner of the radial walls is in connection with a peripheral crenel for inner stability and transfer and the outer end of the radial walls is in connection with at least one peripheral crenel for outer stability and transfer.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: June 11, 2019
    Assignee: MABE, S.A. DE C.V.
    Inventors: José Arturo Lona Santoyo, Noé Araujo Monsalvo
  • Patent number: 10319571
    Abstract: A ruthenium sputtering target, wherein a Si content is 10 to 100 wtppm, a total content of unavoidable impurities excluding gas components is 50 wtppm or less, and a remainder is Ru. By suppressing the crystal growth of ruthenium or a ruthenium alloy and reducing the generation of coarse crystal grains, arcing that occurs during sputtering is minimized, particle generation is reduced, and yield is improved.
    Type: Grant
    Filed: July 23, 2013
    Date of Patent: June 11, 2019
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Kentaro Harada
  • Patent number: 10279082
    Abstract: The present invention relates to an implant having a surface comprising a coating on at least a portion of the surface of the implant, wherein the coating comprises at least two coating layers of bioactive compounds adjacent to each other, obtainable in a process comprising the following steps: providing an implant with a surface, providing a first suspension comprising at least one first bioactive compound in a first solvent, wherein the first bioactive compound is non-soluble or partially soluble in the first solvent, applying said first suspension comprising the at least one first bioactive compound onto at least a part of the implant surface forming a first coating layer; drying the first coating layer, providing a second solution comprising at least one second bioactive compound in a second solvent, wherein the second bioactive compound is soluble or readily soluble in the second solvent; applying said second solution comprising the at least one second bioactive compound onto the first coating layer form
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: May 7, 2019
    Assignee: Biomet Deutschland GmbH
    Inventors: Régis Cartier, Henrich Mannel, Norbert Baranowski
  • Patent number: 10280517
    Abstract: The thermal barrier coating system comprises a matrix of a first chemistry with multiple embedded second phases of a second chemistry. The matrix comprises a stabilized zirconia. The second regions comprise at least 40 mole percent of oxides having the formula Ln2O3, where Ln is selected from the lanthanides La through Lu, Y, Sc, In, Ca, and Mg with the balance zirconia (ZrO2), hafnia (HfO2), titania (TiO2), or mixtures thereof. The second phases have a characteristic thickness (T6) of less than 2.0 micrometers (?m). The spacing between second phases has a characteristic thickness (T5) of less than 8.0 micrometers (?m).
    Type: Grant
    Filed: August 29, 2016
    Date of Patent: May 7, 2019
    Assignee: United Technologies Corporation
    Inventors: David A. Litton, Brian S. Tryon
  • Patent number: 10261382
    Abstract: Provided is a light modulating device including a light modulating unit provided on a substrate, a driving unit electrically connected to the light modulating unit and configured to drive the light modulating unit, and a cover disposed on the light modulating unit and configured to seal the light modulating unit, wherein the light modulating unit comprises an electrochromic device.
    Type: Grant
    Filed: November 16, 2016
    Date of Patent: April 16, 2019
    Assignee: Electronics and Telecommunications Research Instit
    Inventors: Tae-Youb Kim, Yong Hae Kim, Seong-Mok Cho, Jong-Heon Yang, Jae-Eun Pi
  • Patent number: 10252468
    Abstract: Techniques and systems for 3D printing using mirrors that are oriented at about 45 degrees from an X-axis and Y-axis are described. A technique includes receiving an object model; rotating the object model about 45 degrees around the Z-axis; generating cross-sectional images of the rotated object model; mapping pixels of the cross-sectional images to corresponding mirrors of a digital micromirror device of an additive manufacturing apparatus to form additive-manufacturing images, wherein edges of the mirrors are oriented about 45 degrees from the X-axis of the digital micromirror device and about 45 degrees from the Y-axis of the digital micromirror; and providing the additive manufacturing images to generate a build piece corresponding to the object model. Other implementations can include corresponding systems, apparatus, and computer program products.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: April 9, 2019
    Assignee: HOLO, INC.
    Inventors: Richard M. Greene, Michael Daum
  • Patent number: 10242873
    Abstract: Methods for depositing a metal-containing layer atop a substrate disposed in a PVD chamber are provided herein. In some embodiments, such a method includes: providing a plasma forming gas to a processing region of the PVD chamber; providing a first amount of RF power to a target assembly disposed opposite the substrate to form a plasma within the processing region of the PVD chamber; sputtering source material from the target assembly to deposit a metal-containing layer onto the substrate, wherein the source material is at a first erosion state; and increasing the first amount of RF power provided to the target assembly by a predetermined amount while sputtering the source material, wherein the predetermined amount is determined by a second amount of RF power provided to the target assembly to maintain a desired ionization rate of source material at a second erosion state.
    Type: Grant
    Filed: March 6, 2015
    Date of Patent: March 26, 2019
    Inventors: Adolph Miller Allen, Zhenbin Ge
  • Patent number: 10174419
    Abstract: The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm3 to less than 5.0 g/cm3 and an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga+N), of 55% to 80%, can be obtained.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: January 8, 2019
    Inventors: Masami Mesuda, Keitaro Matsumaru, Koyata Takahashi, Ryou Kikuchi, Tetsuo Shibutami
  • Patent number: 10158142
    Abstract: A series of solid-state lithium ion composite electrolytes is described. The composite materials have lithium ions in an anionic framework wherein the anionic framework has lithium ion vacancies or interstitial Li+ sites. The anionic framework lattice is isostructural to a Laves Mg2Cu lattice and the lithium ion (Li+) conductivity of the solid state lithium ion electrolyte is at least 10?4 S/cm. The activation energy for lithium ion migration in the solid state lithium ion electrolyte is 0.36 sV or less. Composites of specific formulae are provided.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: December 18, 2018
    Assignee: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventors: Chen Ling, Ying Zhang
  • Patent number: 10135062
    Abstract: The present invention provides anode materials, methods of producing them, anodes, methods of producing them, electrochemical cells, and lithium-ion batteries, where the anode material comprises a silicon monoxide nanoparticle. In certain embodiments, the silicon monoxide is porous or mesoporous. In certain embodiments, the porous or mesoporous silicon additionally comprises other materials within its pores, such as lithium.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: November 20, 2018
    Assignee: Nexeon Limited
    Inventors: Marie Kerlau, Sarah Goertzen
  • Patent number: 10094163
    Abstract: Low-emissivity coatings that are highly reflective to infrared-radiation. The coating includes three infrared-reflection film regions, which may each include silver.
    Type: Grant
    Filed: June 7, 2016
    Date of Patent: October 9, 2018
    Inventor: Klaus Hartig
  • Patent number: 10047432
    Abstract: A virtual cathode deposition apparatus utilises virtual plasma cathode for generation of high density electron beam to ablate a solid target. A high voltage electrical pulse ionizes gas to produce a plasma which temporarily appears in front of the target and serves as the virtual plasma cathode at the vicinity of target. This plasma then disappears allowing the ablated target material in a form of a plasma plume to propagate toward the substrate. Several virtual cathodes operating in parallel provide plumes that merge into a uniform plasma which when condensing on a nearby substrate leads to wide area deposition of a uniform thickness thin film.
    Type: Grant
    Filed: September 18, 2015
    Date of Patent: August 14, 2018
    Assignee: PLASMA APP LTD.
    Inventor: Dmitry Yarmolich
  • Patent number: 10036724
    Abstract: A gas sensor is provided which constitutes a pump cell 3 and a sensor cell 5 using a single solid electrolyte body 2, a pump electrode 30, a sensor electrode 50, and a reference electrode 80 and is designed to decrease power consumed by a heater and permit a size thereof to be reduced. A ratio of a minimum distance L2 between the pump electrode 30 and the sensor electrode 50 to a thickness d of the solid electrolyte body 2 is set to be three or more, thereby enabling the gas sensor 1 to make the pump cell 3 and the sensor cell 5 using the single solid electrolyte body 2, the pump electrode 30, the sensor electrode 50, and the reference electrode 80. Only either of the gas chamber or the reference gas chamber is, therefore, located between the solid electrolyte body and the heater, thereby decreasing distances of the pump cell and the sensor cell to the heater. This facilitates the ease with which the heater heats up the pump cell and the sensor cell.
    Type: Grant
    Filed: August 21, 2014
    Date of Patent: July 31, 2018
    Inventors: Takashi Araki, Keigo Mizutani, Mitsunobu Nakatou
  • Patent number: 10030303
    Abstract: Sputter tools are described. In one embodiment, an apparatus to support a wafer includes a pallet having a depression to receive the wafer. The pallet includes an opening below the depression, and an edge in the depression is to support the wafer over the opening. A cover at least partially covers the opening. In one example, the cover may be a plate with one or more holes, and a pipe may be located below each of the holes in the cover. In one embodiment, a wafer-processing system includes a processing chamber and a pallet with a depression to receive a wafer. The pallet has an opening below the depression, and an edge in the depression supports the wafer over the opening. In one such embodiment, a cover at least partially covers the opening. According to one embodiment, an energy-absorbing material is disposed below the opening in the pallet.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: July 24, 2018
    Assignees: SunPower Corporation, Total Marketing Services
    Inventors: Yu-Chen Shen, Taiqing Qiu, Robert Woehl, Kieran Mark Tracy, Mukul Agrawal
  • Patent number: 9977306
    Abstract: The present invention provides an electrochromic device including a pair of electrodes and an electrochromic layer disposed between the pair of electrodes and containing different electrochromic materials having the same polarity, wherein in the case where two materials are selected from the different electrochromic materials having the same polarity in descending order of maximum absorbance in a color-display mode of the electrochromic layer and where the diffusion coefficients of the molecules of the two materials are compared with each other in the color-display mode, a smaller diffusion coefficient D2min, a larger diffusion coefficient D2max, and maximum absorbance H2 of the molecules of the electrochromic material having the diffusion coefficient D2max in the color-display mode satisfy Formula (5). 1?D2max/D2min?(1+0.
    Type: Grant
    Filed: December 8, 2014
    Date of Patent: May 22, 2018
    Assignee: Canon Kabushiki Kaisha
    Inventors: Wataru Kubo, Shinjiro Okada, Kenji Yamada
  • Patent number: 9972504
    Abstract: Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.
    Type: Grant
    Filed: August 19, 2015
    Date of Patent: May 15, 2018
    Assignee: Lam Research Corporation
    Inventors: Chiukin Steven Lai, Keren Jacobs Kanarik, Samantha Tan, Anand Chandrashekar, Teh-tien Su, Wenbing Yang, Michael Wood, Michal Danek
  • Patent number: 9944553
    Abstract: The invention relates to a solar protection glazing comprising, on at least one of the faces of a glass substrate, a multi-layer stack comprising at least one layer absorbing solar radiation of at least 3 nm and dielectric coatings surrounding said solar radiation absorbing layer. According to the invention, the light reflection of the glass substrate coated with the multi-layer stack, measured on the substrate side, is at least 20% and is at least two times the light reflection of the glass substrate coated with the multi-layer stack measured on the stack side, and the reflection color on the substrate side has a colorimetric coordinate value a* of less than 2 and a colorimetric coordinate value b* of less than 5. The invention is particularly useful as an automobile glazing, in particular on the roof thereof, as a building glazing or as a household oven.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: April 17, 2018
    Assignee: AGC GLASS EUROPE
    Inventors: Stijn Mahieu, Gaetan Di Stefano, Marc Hauptmann, Jacques Dumont
  • Patent number: 9919959
    Abstract: A coated article includes a low-emissivity (low-E) coating supported by a substrate (e.g., glass substrate) for use in a window, where the low-E coating is exposed to ultraviolet (UV) radiation in order to improve the coating's and thus the coated article's electrical, optical and/or thermal blocking properties. Exposing the low-E coating to UV radiation, e.g., emitted from a UV lamp(s) and/or UV laser(s), allows for selective heating of a contact/seed layer which transfers energy to the adjacent IR reflecting layer.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: March 20, 2018
    Assignee: Guardian Glass, LLC
    Inventors: Alexey Krasnov, Muhammad Imran, Willem Den Boer, Kevin O'Connor
  • Patent number: 9914647
    Abstract: Methods of forming two-dimensional transition metal dichalcogenide sheets are provided. The methods include adding a cross-linking agent to an activating agent to form a solution and mixing a two-dimensional transition metal dichalcogenide with the solution to form a mixture. The methods also include adding a cleaving agent to the mixture to form one or more contiguous sheets of transition metal dichalcogenide.
    Type: Grant
    Filed: October 22, 2014
    Date of Patent: March 13, 2018
    Inventor: Arockiadoss Thevasahayam
  • Patent number: 9881775
    Abstract: This disclosure describes systems and methods for regulating the density and kinetic energy of ions in a sputtering deposition chamber. A pulsed DC waveform with a modulated RF signal is generated and applied to the sputtering chamber. Upon termination of a cycle of the pulsed DC waveform, a reverse voltage spike is generated. This reverse voltage spike reverses the polarity of the cathode and anode of the sputtering chamber for some period of time. A reverse voltage limiting circuit is provided so as to limit the reverse voltage spike to a selected reverse voltage threshold. A controller may be employed to control the timing and duration of the application of the DC waveform, the timing and duration of the RF waveform, and the engagement of the reverse limiting circuit.
    Type: Grant
    Filed: May 1, 2014
    Date of Patent: January 30, 2018
    Inventor: Michael Wayne Stowell, Jr.
  • Patent number: 9859033
    Abstract: Provided are a conductive film which is excellent in hygrothermal characteristics and has excellent bending performance, and an electronic device having such a conductive film. A conductive film is obtained by forming, on one surface or both surfaces of a substrate, a zinc tin oxide (ZTO) layer and a transparent conductive film that is formed of zinc oxide other than zinc tin oxide sequentially from the substrate side, in which a thickness of the zinc tin oxide layer is 5 to 500 nm, a thickness of the zinc oxide-based transparent conductive film is 5 to 1000 nm, and a water-vapor transmittance rate of the zinc tin oxide (ZTO) layer is 0.1 g/(m2·day) or less.
    Type: Grant
    Filed: April 16, 2014
    Date of Patent: January 2, 2018
    Assignee: LINTEC Corporation
    Inventors: Tsutomu Hara, Satoshi Naganawa, Koichi Nagamoto
  • Patent number: 9829478
    Abstract: A detection module and a method for operating the same are revealed. A nano-scale iridium oxide membrane is used as a detection film. After being in contact with different concentrations of hydrogen peroxide, the iridium oxide membrane is oxidized or reduced to generate iridium (III) ions (Ir3+) or iridium (IV) ions (Ir4+). Thus a voltage shift is generated. Whether hydrogen peroxide is contained in the sample can be checked by detection of changes in the voltage. A sample is formed by mixing serum and benzylamine. When the serum in the sample contains LOXL2 enzyme associated with breast cancer, the LOXL2 enzyme reacts with benzylamine to get hydrogen peroxide which is used as a detection medium.
    Type: Grant
    Filed: August 24, 2015
    Date of Patent: November 28, 2017
    Assignee: Chang Gung University
    Inventors: Siddheswar Maikap, Pankaj Kumar
  • Patent number: 9831075
    Abstract: A magnetic field forming apparatus includes a support member having a first side and a second side coupling a first end to a second end and an axis of rotation between the first end and the second end; a first body coupled to the first end of the support member and extending away from the first side of the support member, wherein the first body has a plurality of first magnets coupled to a bottom of the first body; a second body rotatably coupled to the second end of the support member and extending away from the second side of the support member, wherein the second body has a plurality of second magnets coupled to a bottom of the second body, wherein the plurality of the first magnets are disposed about 180 degrees from the plurality of second magnets with respect to the axis of rotation of the support member.
    Type: Grant
    Filed: September 11, 2014
    Date of Patent: November 28, 2017
    Inventors: Goichi Yoshidome, Fuhong Zhang
  • Patent number: 9831326
    Abstract: A method for manufacturing a semiconductor device includes the steps of forming a first insulating film over a first gate electrode over a substrate while heated at a temperature higher than or equal to 450° C. and lower than the strain point of the substrate, forming a first oxide semiconductor film over the first insulating film, adding oxygen to the first oxide semiconductor film and then forming a second oxide semiconductor film over the first oxide semiconductor film, and performing heat treatment so that part of oxygen contained in the first oxide semiconductor film is transferred to the second oxide semiconductor film.
    Type: Grant
    Filed: November 14, 2016
    Date of Patent: November 28, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Tetsuhiro Tanaka, Masayuki Sakakura, Ryo Tokumaru, Yasumasa Yamane, Yuhei Sato
  • Patent number: 9824710
    Abstract: A heat-assisted magnetic recording (HAMR) medium has a multilayered or laminated heat-sink structure. The laminated heat-sink structure includes a first heat-sink layer and a RuAl—X thermal barrier layer between the medium substrate and the first heat-sink layer. The laminated heat-sink structure may include a second heat-sink layer may between the substrate and the RuAl—X thermal barrier layer. In the RuAl—X thermal barrier layer, X is selected from C and one or more oxides of Si, Ti, W, Zr and Hf. The HAMR medium with the laminated heat-sink structure reduces the amount of required laser current as compared to a similar HAMR medium with a conventional single heat-sink layer of the same thickness, while also slightly improving magnetic properties and recording performance.
    Type: Grant
    Filed: May 1, 2017
    Date of Patent: November 21, 2017
    Assignee: Western Digital Technologies, Inc.
    Inventors: Hua Yuan, Shahid Ali Pirzada, Hoan Cong Ho, Paul Christopher Dorsey, B. Ramamurthy Acharya
  • Patent number: 9818593
    Abstract: Methods and systems for performing ionization, including applying radio frequency energy to a chemical compound so that at least one ion of the compound or of a compound fragment is generated, and detecting at least one such ion.
    Type: Grant
    Filed: September 13, 2013
    Date of Patent: November 14, 2017
    Assignee: University of Maine System Board of Trustees
    Inventors: Touradj Solouki, Behrooz Zekavat
  • Patent number: 9811217
    Abstract: Disclosed is a touch panel. The touch panel includes a cover substrate including an active area and an inactive area; a first printing layer on the inactive area; and first and second conductive layers on the first printing layer, wherein the first and second conductive layers extend from a side surface of the first printing layer along a top surface of the first printing layer.
    Type: Grant
    Filed: July 31, 2014
    Date of Patent: November 7, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Byeong Seob Kim
  • Patent number: 9783882
    Abstract: In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and rejuvenated by, e.g., cold spray, is utilized in sputtering processes to produce metallic thin films.
    Type: Grant
    Filed: September 10, 2014
    Date of Patent: October 10, 2017
    Assignees: H.C. Starck Inc., H.C. Starck GmbH
    Inventors: Steven A. Miller, Prabhat Kumar, Richard Wu, Shuwei Sun, Stefan Zimmermann, Olaf Schmidt-Park
  • Patent number: 9772062
    Abstract: A thermal insulator includes a plurality of layers. At least some of the layers include phononic crystals having a phononic bandgap, wherein heat transporting phonons within a selected range of frequencies are substantially blocked by each phononic crystal layer. The plurality of layers thermally isolate a first region from a second region, wherein the first region is at one end of the plurality of layers and the second region is at the other end of the plurality of layers.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: September 26, 2017
    Assignee: Elwha LLC
    Inventors: Paul G. Allen, Jeffrey A. Bowers, Kenneth G. Caldeira, William D. Duncan, Roderick A. Hyde, Muriel Y. Ishikawa, Edward K. Y. Jung, Jordin T. Kare, John Latham, Eric C. Leuthardt, Nathan P. Myhrvold, Thomas J. Nugent, Stephen H. Salter, Clarence T. Tegreene, David B. Tuckerman, Thomas A. Weaver, Charles Whitmer, Lowell L. Wood, Jr., Victoria Y. H. Wood
  • Patent number: 9772727
    Abstract: A touch panel includes a cover substrate having an active area and an unactive area. A printing layer is provided on the unactive area while forming a step difference from the cover substrate. An insulating layer is provided on the printing layer, and the insulating layer has average surface roughness in a range of 0.2 ?m to 0.4 ?m.
    Type: Grant
    Filed: November 12, 2014
    Date of Patent: September 26, 2017
    Assignee: LG Innotek Co., Ltd.
    Inventor: Byeong Seob Kim
  • Patent number: 9738962
    Abstract: A method for the carburization of a deep-drawn article or a stamped-bent article made of austenitic rustproof stainless steel includes inserting the article into an oven in a first process step and heating the article to a first temperature, wherein an oxygen containing standard atmosphere that is present in the oven is replaced by a first gas mixture, and in which the article is heated up to a second temperature in a second process step, wherein the first gas mixture is replaced by a second gas mixture, and in which the article is maintained on the second temperature in a third process step, wherein the second gas mixture is replaced by a third gas mixture, and in which the article is cooled down to a third temperature in a fourth process step, wherein the third gas mixture is replaced by a fourth gas mixture.
    Type: Grant
    Filed: December 2, 2014
    Date of Patent: August 22, 2017
    Assignee: Hubert Stücken GmbH & Co. KG
    Inventors: Cord-Hinrich Bremer, Rolf Lange
  • Patent number: 9738967
    Abstract: A sputtering chamber includes at least two sputtering targets, one of the at least two targets disposed on a first side a substrate conveyor extending within the chamber, and another of the at least two targets disposed on a second side of the conveyor. The at least two targets may be independently operable, and at least one of the targets, if inactivated, may be protected by a shielding apparatus. Both of the at least two targets may be mounted to a first wall of a plurality of walls enclosing the sputtering chamber.
    Type: Grant
    Filed: September 25, 2012
    Date of Patent: August 22, 2017
    Inventors: Dennis M Brabender, Jeffrey L Kokoschke
  • Patent number: 9689065
    Abstract: A stack includes a substrate, a magnetic recording layer having a columnar structure, and an interlayer disposed between the substrate and the magnetic recording layer. The columnar structure includes magnetic grains separated by a crystalline segregant or a combination of crystalline and amorphous segregants.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: June 27, 2017
    Inventors: Jingsheng Chen, Kaifeng Dong, Ganping Ju, Yingguo Peng
  • Patent number: 9683956
    Abstract: Provided are a method of manufacturing a nano gap sensor and a nano gap sensor manufactured by the method. According to the method of manufacturing the nano gap sensor, fine cracks are formed in a substrate including a silicon wafer, etc. in order to form the nano gap with simplified processes and low manufacturing costs, and after that, a metal catalyst layer is stacked on the nano gap to manufacture a sensor capable of selectively detecting a certain material or a gas such as hydrogen. In particular, when palladium or a palladium alloy is used as the metal catalyst layer, highly sensitive hydrogen sensors capable of responding various concentrations of hydrogen may be produced in large quantities.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: June 20, 2017
    Assignee: Kookmin University Industry Academy Cooperation Foundation
    Inventor: Sihyung Lim
  • Patent number: 9673419
    Abstract: Provide is a display device that prevents adverse effects on pixel circuits, resulting from a process related to a sealing film, and a manufacturing method of the display device. A display device includes pixel circuits on a substrate and a sealing film having a multilayer structure on the pixel circuits. The sealing film includes a first layer being formed in contact with the pixel circuits and being made of a silicon-containing inorganic material. The first layer is a mixed film containing at least one component changing seamlessly in a stacking direction.
    Type: Grant
    Filed: August 5, 2015
    Date of Patent: June 6, 2017
    Assignee: Japan Display Inc.
    Inventor: Hiroki Ohara
  • Patent number: 9671137
    Abstract: The invention concerns a multilayer material comprising at least: a support having a reflectance R higher than 80% for radiations of wavelengths higher than 5 ?m, a selective layer comprising a combination of Vanadium oxides VO2 and VO2O2n+/?1, with n>1, said selective layer having an absorbance higher than 75% for radiations of wavelengths comprised between 0.4 and 2.5 ?m, regardless of the temperature T, and having, for radiations of wavelengths comprised between 6 and 10 ?m, a transmittance Tr such that: Tr>85% for T<Tc, a critical temperature, 20%?Tr?50% for T>Tc. Application to the production of thermal solar panels having a low stagnation temperature and high performance.
    Type: Grant
    Filed: March 13, 2014
    Date of Patent: June 6, 2017
    Inventors: David Mercs, Fabien Capon, Alan Corvisier
  • Patent number: 9668355
    Abstract: Protective coatings, including moisture-resistant coatings, that include two or more different types of moisture-resistant materials are disclosed, as are moisture-sensitive substrates that include such protective coatings. Moisture-sensitive substrates that include different types of moisture-resistant coatings on different elements are also disclosed.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: May 30, 2017
    Assignee: HZO Inc.
    Inventors: Blake Stevens, Yang Yun
  • Patent number: 9627187
    Abstract: A sputtering apparatus includes a deposition preventing plate arranged between a substrate stage and a plurality of cathode electrodes, and a shutter plate arranged between the deposition preventing plate and the substrate stage. The deposition preventing plate has holes at positions respectively facing a plurality of targets held by the plurality of cathode electrodes. Concentric concavo-convex shapes centered on the rotation axis of the shutter plate are formed on surfaces, that face each other, of the deposition preventing plate and the shutter plate.
    Type: Grant
    Filed: September 12, 2014
    Date of Patent: April 18, 2017
    Inventor: Shigenori Ishihara
  • Patent number: 9623590
    Abstract: A fine concavo-convex structure product (10) is provided with an etching layer (11), and a resist layer (12) comprised of a heat-reactive resist material for dry etching provided on the etching layer (11), a concavo-convex structure associated with opening portions (12a) formed in the resist layer (12) is formed in the etching layer (11), a pattern pitch P of a fine pattern of the concavo-convex structure ranges from 1 nm to 10 ?m, a pattern depth H of the fine pattern ranges from 1 nm to 10 ?m, and a pattern cross-sectional shape of the fine pattern is a trapezoid, a triangle or a mixed shape thereof. The heat-reactive resist material for dry etching has, as a principal constituent element, at least one species selected from the group consisting of Cu, Nb, Sn, Mn, oxides thereof, nitrides thereof and NiBi.
    Type: Grant
    Filed: January 24, 2013
    Date of Patent: April 18, 2017
    Inventor: Yoshimichi Mitamura
  • Patent number: 9627695
    Abstract: An electrical conductive member (20) includes a metal substrate (21), an intermediate layer (23) formed on the metal substrate (21), and an electrical conductive layer (25) formed on the intermediate layer (23). The intermediate layer (23) contains a constituent of the metal substrate (21), a constituent of the electrical conductive layer (25), and a crystallization inhibiting component that inhibits crystallization in the intermediate layer (23). According to this configuration, the electrical conductive member having excellent electrical conductivity and resistance to corrosion can be obtained.
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: April 18, 2017
    Assignee: NISSAN MOTOR CO., LTD.
    Inventors: Tomokatsu Himeno, Keisuke Yamamoto, Atsushi Miyazawa, Motoki Yaginuma
  • Patent number: 9570416
    Abstract: A plurality of microelectronic assemblies are made by severing an in-process unit including an upper substrate and lower substrate with microelectronic elements disposed between the substrates. In a further embodiment, a lead frame is joined to a substrate so that the leads project from this substrate. Lead frame is joined to a further substrate with one or more microelectronic elements disposed between the substrates.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: February 14, 2017
    Assignee: Tessera, Inc.
    Inventors: Belgacem Haba, Craig S. Mitchell, Masud Beroz
  • Patent number: 9564299
    Abstract: In various embodiments, joined sputtering targets are formed at least in part by spray deposition of the sputtering material and/or welding.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: February 7, 2017
    Assignee: H.C. Starck, Inc.
    Inventors: Scott Jeffrey Volchko, William Loewenthal, Stefan Zimmermann, Mark Gaydos, Steven Alfred Miller