Abstract: Plasma processing systems and methods are disclosed. The plasma processing system includes a high-frequency generator configured to deliver power to a plasma chamber and a low-frequency generator configured to deliver power to the plasma chamber. A filter is coupled between the plasma chamber and the high-frequency generator, and the filter suppresses mixing products of high frequencies produced by the high-frequency generator and low frequencies produced by the low-frequency generator.

Abstract: A method for preparing photoactive perovskite materials. The method comprises the steps of: introducing a lead halide and a first solvent to a first vessel and contacting the lead halide with the first solvent to dissolve the lead halide to form a lead halide solution, introducing a Group 1 metal halide a second solvent into a second vessel and contacting the Group 1 metal halide with the second solvent to dissolve the Group 1 metal halide to form a Group 1 metal halide solution, and contacting the lead halide solution with the Group 1 metal halide solution to form a thin-film precursor ink. The method further comprises depositing the thin-film precursor ink onto a substrate, drying the thin-film precursor ink to form a thin film, annealing the thin film; and rinsing the thin film with a salt solution.

Abstract: The present invention provides a device for blocking plasma backflow in a process chamber to protect an air inlet structure, comprising an air inlet nozzle tightly connected to an air inlet flange. The inner cavity of the air inlet nozzle is provided with an air inlet guide body, wherein the air inlet guide body has an upper structure, a middle structure, and a lower structure, the upper, middle, and lower structures are an integrated structure, the upper, middle, and lower structures are all cylindrical, the cross-sectional diameter of the upper structure is smaller than that of the middle structure, a gas gathering area is arranged between the middle structure and the lower structure, and the middle structure and the lower structure are connected by the gas gathering area.

Abstract: A layered structure including a transparent substrate; a photoluminescent layer disposed on the transparent substrate and a pattern of a quantum dot polymer composite; and a capping layer disposed on the photoluminescent layer and including an inorganic material, a method of producing the same, a liquid crystal display including the same. The quantum dot polymer composite includes a polymer matrix; and a plurality of quantum dots in the polymer matrix, the pattern of the quantum dot polymer composite includes at least one repeating section and the repeating section includes a first section configured to emit light of a first peak wavelength, the inorganic material is disposed on at least a portion of a surface of the repeating section, and the inorganic material includes a metal oxide, a metal nitride, a metal oxynitride, a metal sulfide, or a combination thereof.

Abstract: An example method of reducing short circuits from occurring in a battery can include providing a current collector coated with a safety layer. The method can include providing an electrochemically active material film on the safety layer such that the safety layer is configured to reduce exposure of the current collector to an opposing electrode. The method can also include adhering the electrochemically active material film to the current collector via the safety layer.

Abstract: An example method of reducing short circuits from occurring in a battery can include providing a current collector coated with a safety layer. The method can include providing an electrochemically active material film on the safety layer such that the safety layer is configured to reduce exposure of the current collector to an opposing electrode. The method can also include adhering the electrochemically active material film to the current collector via the safety layer.

Abstract: An electronic device may include conductive structures having a visible-light-reflecting coating. The coating may include a seed layer, transition layers, a neutral-color base layer, and an uppermost layer that forms a single-layer interference film. The neutral-color base layer may be opaque to visible light. The interference film may include silicon and may have an absorption coefficient between 0 and 1. The interference film may include, for example, CrSiCN or CrSiC. The composition of the interference film, the thickness of the interference film, and/or the composition of the base layer may be selected to provide the coating with a desired color in the visible spectrum (e.g., at blue or purple wavelengths). The color may be relatively stable even if the thickness of the coating varies across its area.

Abstract: A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.

Abstract: A method for processing a substrate that includes: applying, at an ionizer, a drive pulse train to an ion source to ionize a gas cluster beam and transfer the drive pulse train to the gas cluster beam; measuring, at a detector exposed to the gas cluster beam, a beam current synchronously with the drive pulse train; obtaining time-of-flight information of the clusters and the monomers in the gas cluster beam based on the beam current and the drive pulse train; determining size information relating to a size distribution of clusters and monomers in the gas cluster ion beam based on the time-of-flight information; adjusting a process parameter of the gas cluster beam based on the size information; and exposing the substrate to the gas cluster beam with the adjusted process parameter.

Abstract: A sputtering method includes one or more sputtering processes. Each sputtering process includes in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate; in a second pre-sputtering phase, sputtering a target material compound on the baffle plate; and in a main sputtering phase, sputtering the target material compound on the substrate. The first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase.

Abstract: Exemplary substrate processing system may include a chamber body that defines a processing region. The systems may include a liner positioned atop the chamber body. The liner may include first disconnect members. The systems may include a faceplate that is positioned atop the liner. The systems may include a support disposed within the chamber body. The support may include a plate comprising a heater. The plate may include second disconnect members. The support may include a shaft coupled with the plate. The support may include a dynamic plate disposed about the shaft below the plate. The support may include metallic straps that couple the plate with the dynamic plate. The dynamic plate may include inner disconnect members and outer disconnect members. Inner disconnect members may be engageable with second disconnect members in a transfer position. Outer disconnect members may be engageable with first disconnect members in a process position.

Abstract: Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

Abstract: The present disclosure provides nanoparticle transducers and methods of use thereof for the detection of analyte concentrations in a fluid. Nanoparticle transducers can comprise a nanoparticle, such as a Pdot, coupled to an enzyme that catalyzes a reaction with the analyte. The nanoparticle transducers further comprise chromophores that emit fluorescence that varies as a function of the concentration of one of the elements of the reaction. The nanoparticle transducer thus changes fluorescence as the analyte concentration changes, transforming analyte concentration values into fluorescence intensities. The measurement of these intensities provides a measurement of the analyte concentration. The nanoparticle transducers are biocompatible, allowing for use in vivo, for the monitoring of analyte blood concentrations such as blood glucose concentrations.

Abstract: Some embodiments provide a magnetron sputtering apparatus including a vacuum chamber within which a controlled environment may be established, a target comprising one or more sputterable materials, wherein the target includes a racetrack-shaped sputtering zone that extends longitudinally along a longitudinal axis and comprises a straightaway area sandwiched between a first turnaround area and a second turnaround area, a gas distribution system that supplies a first gas mixture to the first turnaround area and/or the second turnaround area and supplies a second gas mixture to the straightaway area, wherein the first gas mixture reduces a sputtering rate relative to the second gas mixture. In some cases, the first gas mixture includes inert gas having a first atomic weight and the second gas mixture includes inert gas having a second atomic weight, wherein the second atomic weight is heavier than the first atomic weight.

Abstract: Disclosed are a composition for depositing a thin film including an organometallic compound including strontium, barium, or a combination thereof; and at least one unshared electron pair-containing compound represented by Chemical Formula 1, a method of manufacturing a thin film using the composition for depositing the thin film, and the thin film manufactured from the composition for depositing the thin film, and a semiconductor device including the thin film.

Abstract: A manufacturing method of an array substrate, an array substrate and a display device are disclosed. The manufacturing method of the array substrate includes: providing a base substrate (200); forming a semiconductor layer on the base substrate; depositing an etch stop layer material on the semiconductor layer; subjecting the etch stop layer material to a wet etching process to form an etch stop layer; subjecting the semiconductor layer to a dry etching process to form an active layer, wherein the active layer includes a first region and a second region surrounding the first region, an orthographic projection of the etch stop layer on the base substrate completely coincides with an orthographic projection of the first region of the active layer on the base substrate.

Abstract: A transparent substrate, in particular made of glass, provided with a stack of thin layers acting on solar radiation, includes at least one functional layer, this functional layer being combined with at least one barrier underlayer, wherein this barrier underlayer is a layer of silicon dioxide having a thickness of between 15 and 25 nm.

Abstract: A method for coating stainless steel press plates includes preparing the stainless steel press plate for coating and coating the stainless steel press plate with a diboride doped with 1%-5% by weight aluminum to produce a diboride-aluminum coating. The step of coating includes applying the diboride-aluminum coating to a stainless steel press plate using a magnetron sputter coating system.

Abstract: A coated substrate, includes a coating that includes, starting from the substrate in this order: a) a layer of diamond-like carbon (DLC), b) a metallic, single-ply or multi-ply layer, and c) an oxygen barrier layer, wherein the metallic, single-ply or multi-ply layer contains b1) tin or tin and at least one alloying element for tin, which are present unalloyed and/or alloyed, or b2) magnesium and at least one alloying element for magnesium, which are present unalloyed and/or alloyed. The coated substrate protects the DLC layer, as a result of which said layer can be tempered. The coating has good mechanical stability and good aging stability before heat treatment.

Abstract: The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include a heterogeneous structure, for example a heterogeneous composition and/or morphology. Such heterogeneous anodically coloring layers can be used to better tune the properties of a device.

Abstract: A low-E coating has good color stability (a low ?E* value) upon heat treatment (HT). Thermal stability may be improved by the provision of an as-deposited crystalline or substantially crystalline layer of or including zinc oxide, doped with at least one dopant (e.g., Sn), immediately under an infrared (IR) reflecting layer of or including silver; and/or by the provision of at least one dielectric layer of or including an oxide of zirconium. These have the effect of significantly improving the coating's thermal stability (i.e., lowering the ?E* value). An absorber film may be designed to adjust visible transmission and provide desirable coloration, while maintaining durability and/or thermal stability. The dielectric layer (e.g., of or including an oxide of Zr) may be sputter-deposited so as to have a monoclinic phase in order to improve thermal stability.

Abstract: A method and a system for film deposition, the system comprising a substrate and a negatively biased target, the target being mounted on a magnetron sputtering cathode and located at a distance from the substrate, wherein a laser beam from a pulsed laser is focused on the target, thereby triggering a magnetron plasma or ejecting vaporized and ionized material from the target in an existing magnetron plasma, the magnetron plasma sputtering material from the target depositing on the substrate.

Abstract: The manufacturing cost of a sputtering target is reduced and the impurity concentration of the manufactured sputtering target is also reduced. A method of manufacturing a sputtering target includes: surface-treating at least one of a used sputtering target and a scrap material; melting at least one of the used sputtering target and the scrap material after the surface treatment to form an ingot; and manufacturing a sputtering target by subjecting the ingot to forging, rolling, heat treating, and machining.

Abstract: Embodiments of a magnetron assembly and a processing system incorporating same are provided herein. In some embodiments, a magnetron assembly includes a body extending along a central axis of the magnetron assembly; a coolant feed structure extending through the body along the central axis to provide a coolant along the central axis to an area beneath the coolant feed structure; and a rotatable magnet assembly coupled to a bottom of the body and having a plurality of magnets.

Abstract: A process analytic system includes an analytic sensor configured to sense a characteristic of a fluid. The process analytic system also includes measurement circuitry coupled to the analytic sensor and configured to generate an indication of the characteristic of the fluid. The process analytic system includes a processor coupled to the measurement circuitry and configured to receive the indication of the characteristic of the fluid and calculate a sensor-related output based on the indication of the characteristic of the fluid. In addition, the process analytic system includes a diagnostics component configured to determine a rate of degradation of the analytic sensor based on the sensor-related output and a reference value, wherein the rate of degradation is compared to a pre-selected threshold.

Abstract: A method for rendering a gemstone traceable, includes the steps: providing an invisible marker, wherein the marker is unambiguously identifiable, fastening the marker in a placement location of the gemstone, and acquiring marking information that includes that this unambiguously identifiable marker is fastened to this gemstone. The marker can be transported to the placement location in a manner in which it is suspended in a carrier fluid. An additive, for example a primer or a starting material for a surface coating of at least a part surface of the placement location, can be added to the carrier fluid.

Abstract: The magnetic recording medium disclosed in the present application includes a non-magnetic support, an undercoat layer, a magnetic layer containing magnetic particles, and a back coat layer. The coercive force Hc of the magnetic layer in the thickness direction at 25° C. is not 4100 oersteds (Oe) or more, and the coercive force Hc of the magnetic layer in the thickness direction at a temperature between 55° C. and 80° C. inclusive is not less than 1200 oersteds (Oe) and not more than 3700 oersteds (Oe).

Abstract: HAMR media with a magnetic recording layer having a reduced Curie temperature and methods of fabricating the HAMR media are provided. One such HAMR medium includes a substrate, a heat sink layer on the substrate, an interlayer on the heat sink layer, and a multi-layer magnetic recording layer on the interlayer. In such case, the multi-layer magnetic recording layer includes a first magnetic recording layer including an alloy selected from FePtX and CoPtX, where X is a material selected from the group consisting of Cu, Ni, and combinations thereof, a second magnetic recording layer on the first magnetic recording layer and having at least one material different from the materials of the first magnetic recording layer, and a third magnetic recording layer on the second magnetic recording layer and having at least one material different from the materials of the first magnetic recording layer.

Abstract: A method of fabricating a semiconductor may include forming on a substrate a mold structure including a mold layer, a buffer layer, and a support layer, performing on the mold structure an anisotropic etching process to form a plurality of through holes in the mold structure, and forming a plurality of bottom electrodes in the through holes. The buffer layer has a nitrogen content amount that increases as approaching the support layer from the mold layer. The buffer layer has an oxygen content amount that increases as approaching the mold layer from the support layer.

Abstract: Device and method for producing defined properties of gradient layers in a system of multilayered coatings in sputtering installations with the following features: a) a pair of cathodes arranged in a common process chamber and consisting of a first cathode body and a second cathode body is supplied with direct current by means of a common power supply, wherein, before entering the process chamber, the direct current is converted into a series of pulses comprising alternating positive and negative pulses with interpulse periods in between, b) an arrangement for controlling the length of the individual pulses and the duration of the respective interpulse periods.

Abstract: A tubular target for cathode atomization does not have a backing tube and it is made of molybdenum or a molybdenum alloy. The target has an inner surface which is in contact at least in certain regions with a cooling medium, wherein at least one region of the inner surface is separated from the cooling medium by at least one protective device. By way of example, the protective device may be in the form of a polymer layer. The tubular target exhibits outstanding long-term stability.

Abstract: Components suitable for chemically aggressive environments are disclosed, as well as methods for producing the components. One component may include a substrate having at least one surface having a layer system, which may include an amorphous carbon layer. The layer system may include at least one metallic intermediate layer which is arranged between the substrate and the amorphous carbon layer. The metallic intermediate layer may include titanium, a titanium alloy, nickel, or a nickel alloy. A two-layer bonding layer may be arranged between the at least one intermediate layer and the substrate and a first bonding layer composed of NiP. A second bonding layer composed of a nickel-chromium alloy or a nickel-vanadium alloy may also be present. The amorphous carbon layer may form an outer layer of the layer system facing away from the substrate and may comprise at least one amorphous hydrogen-containing carbon layer.

Abstract: The invention relates to a process for obtaining a material comprising a substrate coated on at least one part of at least one of its faces with at least one functional layer, said process comprising: a step of depositing the or each functional layer, then a step of depositing a sacrificial layer on said at least one functional layer, then a step of heat treatment by means of radiation chosen from laser radiation or radiation from at least one flash lamp, said radiation having at least one treatment wavelength between 200 and 2500 nm, said sacrificial layer being in contact with the air during this heat treatment step, then a step of removing the sacrificial layer using a solvent, said sacrificial layer being a monolayer and being such that, before heat treatment, it absorbs at least one part of said radiation at said at least one treatment wavelength and that, after heat treatment, it is capable of being removed by dissolution and/or dispersion in said solvent.

Abstract: A magnetron sputtering device in one embodiment of the present disclosure includes a support table supporting thereon a base substrate, and a floating mask arranged at a first side of the support table and substantially parallel to the support table.

Abstract: A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber has a base component body. The base component body has an exterior surface configured to face a processing environment of the processing chamber. A textured skin is conformable to the exterior surface. The textured skin has a first side configured to be disposed against the exterior surface and a second side facing away from the first side. The second side has a plurality of engineered features configured to enhance adhesion of material deposited on the textured skin during use of the processing chamber.

Abstract: A method for correcting a reflective optical element for the wavelength range between 5 nm and 20 nm, which includes a multilayer system on a substrate. The multilayer system has layers consisting of at least two alternately arranged different materials with a different real component of the refractive index for a wavelength in the extreme ultraviolet wavelength range. The method includes: measuring the reflectivity distribution over the surface of the multilayer system; comparing the measured reflectivity distribution to a nominal distribution of the reflectivity over the surface of the multilayer system, determining at least one partial surface having a measured reflectivity above the nominal reflectivity; and irradiating the at least one partial surface with ions or electrons.

Abstract: A system for generating broadband radiation is disclosed. The system includes a target material source configured to deliver one or more of a liquid or solid state target material to a plasma-forming region of a chamber. The system further includes a pump source configured to generate pump radiation to excite the target material in the plasma forming region of the chamber to generate broadband radiation. The system is further configured to transmit at least a portion of the broadband radiation generated in the plasma-forming region of the chamber out of the chamber through a windowless aperture.

Abstract: A low-E coating has good color stability (a low ?E* value) upon heat treatment (HT). Thermal stability may be improved by the provision of an as-deposited crystalline or substantially crystalline layer of or including zinc oxide, doped with at least one dopant (e.g., Sn), immediately under an infrared (IR) reflecting layer of or including silver; and/or by the provision of at least one dielectric layer of or including an oxide of zirconium. These have the effect of significantly improving the coating's thermal stability (i.e., lowering the ?E* value). An absorber film may be designed to adjust visible transmission and provide desirable coloration, while maintaining durability and/or thermal stability. The dielectric layer (e.g., of or including an oxide of Zr) may be sputter-deposited so as to have a monoclinic phase in order to improve thermal stability.

Abstract: A plasma processing method capable of reducing an amount of deposit adhering to an upper electrode or removing the deposit from the upper electrode is provided. In the plasma processing method, the upper electrode of a capacitively coupled plasma processing apparatus is cooled. A supporting table including a lower electrode is provided within a chamber of the plasma processing apparatus. The upper electrode is provided above the supporting table. During the cooling of the upper electrode, a film of a substrate is etched by plasma generated within the chamber. The substrate is placed on the supporting table during the etching of the film. A negative bias voltage is applied to the upper electrode while the etching is being performed.

Abstract: Described examples include a micromechanical device including a substrate and a base formed on a surface of the substrate; and a first layer extending from the base to a plane separated from the base by a via. The first layer forms an outer layer of the via and has a portion lying in the plane and surrounding the via. A first fill is formed in a first portion of the via. A strut is in the via and on the first fill. A second fill is in a second portion of the via on the strut and extends from the strut to the plane. A second layer is over the second fill and at least a portion of the second layer is over the portion of the first layer lying in the plane.

Abstract: This application relates to an OLED device, a manufacturing method thereof, and a display device. The OLED device includes a light emitting unit between an anode and a cathode. The light-emitting unit includes: a first carrier function layer for migration of first carriers, the first carrier function layer including a first material layer; a second carrier function layer for migration of second carriers having a polarity different from that of the first carriers, the second carrier function layer including a second material layer; a light emitting layer between the first material layer and the second material layer, the light emitting layer including a luminescent material; a first buffer layer between the light emitting layer and the first material layer. The first buffer layer is a mixed layer containing the luminescent material and the first material.

Abstract: A frequency conversion device and method is disclosed. In one aspect, a frequency device includes an array of mutually spaced semiconductor islands composed of at least one III-V semiconductor compound. The semiconductor islands are configured so that electromagnetic radiation of a first wavelength incident upon the semiconductor islands causes them to emit electromagnetic radiation of a second wavelength shorter than the first wavelength by a nonlinear frequency conversion process. The frequency device further includes a transparent support supporting the semiconductor islands. The transparent support is substantially transparent to radiation of the second wavelength, so that at least the radiation of the second wavelength passes through the transparent support.

Abstract: A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.

Abstract: Provided are extrusion tools such as extrusion dies or portions thereof having a surface with at least one coating thereon, and methods of forming the same are disclosed. The at least one coating is formed from a composition that is a metal aluminum nitride or carbonitride with particular characteristics such that the amount of aluminum varies within the coating between a coating outer surface and an intermediate thickness within the coating. The resulting coatings have tailored physical and performance characteristics that result in improved wear and extrusion performance.

Abstract: A temperature control method includes cooling an upper electrode and increasing a temperature of the upper electrode. A path having an inlet and an outlet is formed within the upper electrode. The upper electrode constitutes an evaporator. A compressor, a condenser and an expansion valve are connected in sequence between the outlet and the inlet of the path. A flow dividing valve is connected between an output of the compressor and the inlet to bypass the condenser and the expansion valve. In the cooling of the upper electrode, a coolant is supplied into the path via the compressor, the condenser and the expansion valve. In the increasing of the temperature of the upper electrode, the flow dividing valve is opened and the upper electrode is heated.

Abstract: The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

Abstract: A semiconductor manufacturing apparatus includes a vacuum chamber, a rotary member, a first magnet, a second magnet, and a magnetic body. The vacuum chamber contains a substrate and a target located opposite to the substrate. The rotary member has a first surface located on a back side of the target outside the vacuum chamber. The first magnet is provided on the first surface. The second magnet has a magnetic pole opposite to a magnetic pole of the first magnet and is provided on an inner side of the first magnet on the first surface. The magnetic body is provided between the first magnet and the second magnet and is configured to be movable backward and forward in a vertical direction.

Abstract: A coated article includes a substrate, a first dielectric layer, a subcritical metallic layer having discontinuous metallic regions, a primer over the subcritical layer, and a second dielectric layer over the primer layer. The primer can be a nickel-chromium alloy. The primer can be a multilayer primer having a first layer of a nickel-chromium alloy and a second layer of titania.

Abstract: A method of determining the presence of isotopes in a sample, comprising (i) providing a sample beam containing the sample; (ii) causing the sample beam to travel back and forth along a single longitudinal axis; (iii) ionising the sample beam with one or more lasers, wherein ionising the sample beam comprises operating the one or more lasers at a plurality of frequencies; (iv) determining time of flight data of a first part of the sample beam relative to a second part of the sample beam; (v) determining an ionisation time using the time of flight data; (vi) obtaining data relating to the frequency of the one or more lasers at the ionisation time; and (vii) determining the presence of isotopes in the sample using the data relating to the frequency of the one or more lasers at the ionisation time.

Abstract: The present invention relates to an aluminum-magnesium coated steel plate using vacuum coating, wherein an aluminum-magnesium coating layer is constituted by 1 to 45 wt % of magnesium, a balance of aluminum, and other inevitable impurities, and an Al3Mg2 alloy phase is formed in the aluminum-magnesium coating layer by performing heat treatment of the steel plate.