Abstract: A vacuum arc source for arc evaporation of boride includes: a cathode made of at least 90 at-% of boride, in particular made of more than 98 at-% of boride; an anode, which is preferably in the shape of a disk; a body made of a material which is less preferred by arc discharge compared to the cathode, the body surrounding the cathode in such a way that during operation of the vacuum arc source, movement of an arc on an arc surface of the cathode is limited by the body. At least 90 at-% of the material of the anode is of the same chemical composition as the cathode.

Abstract: An ARC evaporator comprising: a cathode assembly comprising a cooling plate (11), a target (1) as cathode element, an electrode arranged for enabling that an arc between the electrode and the front surface (1A) of the target (1) can be established—a magnetic guidance system placed in front of the back surface (1 B) of the target (i) comprising means for generating one or more magnetic whereas: —the borders of the cathode assembly comprise a surrounding shield (15) made of ferromagnetic material, wherein the surrounding shield (15) has a total height (H) in the transversal direction, said total height (H) including a component (C) for causing a shielding effect of magnetic field lines extending in any longitudinal directions, establishing in this manner the borders of the cathode assembly as limit of the extension of the magnetic field lines in any longitudinal direction.

Abstract: A coated cutting tool includes a substrate and a coating, wherein the coating has a PVD layer being a compound of the formula Ti1-xSixCaNbOc, wherein 0.10<x?0.30, 0?a?0.75, 0.25?b?1, 0?c?0.2, and a+b+c=1. The PVD layer is a NaCl structure solid solution. The disclosure further relates to a method for producing the PVD layer by cathodic arc evaporation using a pulsed bias voltage of from about ?40 to about ?450 V to the substrate and using a duty cycle of less than about 12% and a pulsed bias frequency of less than about 10 kHz.

Abstract: Embodiments of the present disclosure provide a mask structure and a filtered cathodic vacuum arc (FCVA) apparatus. The mask structure is configured to prepare protrusions on a carrying surface of an electrostatic chuck and includes a main mask plate and a side mask plate that are made of a conductive metal. The main mask plate is configured to form a patterned film layer corresponding to the protrusions on the carrying surface of the electrostatic chuck. The side mask is configured to cover a side surface of the electrostatic chuck to avoid forming a film layer on the side surface. The mask structure can be electrically conductive. The mask structure may prevent the side surface of the electrostatic chuck from being coated when the protrusions are prepared on the carrying surface of the electrostatic chuck. Thus, the mask structure may be applied to an FCVA process.

Abstract: An arc source system, comprising a cooling body (12) and a holder body (3) adapted to be detachably fastened to said cooling body and for holding a cathode body (4), wherein the system comprises a membrane (2) which is arranged between the holder body and a lower portion (14) of said cooling body; and wherein said lower portion (14) of said cooling body is provided with at least one cooling fluid channel (11), and wherein said holder body (3) is provided with an inner fastening arrangement configured to be coupled with a corresponding outer fastening arrangement on a cathode body (4).

Abstract: A semiconductor device is manufactured by modifying an electromagnetic field within a deposition chamber. In embodiments in which the deposition process is a sputtering process, the electromagnetic field may be modified by adjusting a distance between a first coil and a mounting platform. In other embodiments, the electromagnetic field may be adjusted by applying or removing power from additional coils that are also present.

Abstract: The present invention relates to a method for the evaporation of a cathode by means of cathodic arc evaporation, wherein the focal spot of the arc is forced to a predetermined track on the cathode surface by means of temporally and spatially controllable magnetic fields, wherein a predetermined removal of material of the cathode surface is produced. The invention also relates to a device for carrying out the method according to the invention.

Abstract: An ARC evaporator comprising: —a cathode assembly, —an electrode arranged for enabling that an arc between an electrode and a front surface of the target can be established, and—a magnetic guidance system placed in front of a back surface of the target characterized in that: the magnetic guidance system comprises means placed in a central region for generating at least one magnetic field and means in a peripherical region for generating at least one further magnetic field, wherein the magnetic fields generated in this manner result in a total magnetic field for guiding the arc and controlling the cathode spot path at the front surface of the target, wherein the means placed in the central region comprises one electromagnetic coil for generating a magnetic field and the means placed in the peripherical region comprises two electromagnetic coils for generating two further magnetic fields.

Abstract: A deposition method of arranging a discharge portion of a striker near a target to induce arc discharge and forming a film on a substrate using a plasma generated by the arc discharge is disclosed. The method includes a changing step of changing a position for inducing the arc discharge by the striker in a region set in the target, a deposition step of forming the film on the substrate using the plasma generated by inducing the arc discharge at the position, and a reduction step of reducing the region in accordance with use of the target.

Abstract: A cutting tool comprises a substrate and a coating layer provided on the substrate, the coating layer including a multilayer structure layer composed of a first unit layer and a second unit layer, and a lone layer, the lone layer including cubic TizAl1-zN crystal grains, an atomic ratio z of Ti in the TizAl1-zN being 0.55 or more and 0.7 or less, the lone layer having a thickness with an average value of 2.5 nm or more and 10 nm or less, the multilayer structure layer having a thickness with an average value of 10 nm or more and 45 nm or less, one multilayer structure layer and one lone layer forming a repetitive unit having a thickness with an average value of 20 nm to 50 nm, a maximum value of 40 nm to 60 nm, and a minimum value of 10 nm to 30 nm.

Abstract: A coating device that can control a coating thickness distribution along the circumferential direction of a work is provided. The coating device includes a work turning device that holds a plurality of works to rotate and revolve the works, a target having an emission face from which particles come out as a material of a coating formed on an outer circumferential face of each of the works, a power source that supplies an arc current to the target to cause the particles to come out of the target, and a controller that controls the power source to set the arc current in a particular period to be higher than a reference output, the particular period being at least a portion of a period in which a particular portion of the rotating work faces the emission face.

Abstract: The invention relates to an arrangement for coating substrate surfaces by means of electric arc discharge in a vacuum chamber, wherein electric arc discharges between a target (1) which is electrically connected as a cathode and is formed from a metal material are used. Arranged at a distance from the target (1) is an anode (2), with which the electric arc discharges are ignited to form a plasma formed with metal material of the target (1). The target (1) is connected to a first electric power source (3) and the anode (2) to a second electric power source (4), wherein the absolute values of the electric voltages connected to the target (1) and to the anode (2) different from one another.

Abstract: The present invention discloses a magnetic filter tube, and relates to the technical field of magnetic filters. The magnetic filter tube includes a first rectangular tube and a second rectangular tube, where one end of the first rectangular tube is fixedly connected to one end of the second rectangular tube; the other end of the first rectangular tube forms an inlet of the magnetic filter tube; the inlet of the magnetic filter tube is connected with a cathode target flange; the other end of the second rectangular tube forms an outlet of the magnetic filter tube; the outlet of the magnetic filter tube is connected with a vacuum chamber; an inner wall of the first rectangular tube and an inner wall of the second rectangular tube are each provided with a protrusion and a groove; the protrusion is filled with cold water.

Abstract: Provided is a film formation method that includes: an etching step of etching the surface of the substrate by bringing inert gas ions into collision with the surface of the substrate, the inert gas ions generated in a chamber accommodating the substrate; an implantation step of bringing inert gas ions into collision with metal particles deposited on the surface of the substrate to thereby hit the metal particles into the surface of the substrate while bringing the inert gas ions into collision with a metal target to thereby cause the metal particles to sputter out of the metal target and depositing the metal particles on the surface of the substrate etched in the etching step; and a film formation step of forming the film on the surface of the substrate into which the metal particles have been hit in the implantation step.

Abstract: In one embodiment, a fusion reactor includes an enclosure, one or more internal magnetic coils suspended within an interior of the enclosure and co-axial with a center axis of the enclosure, one or more encapsulating magnetic coils co-axial with the center axis of the enclosure, the encapsulating magnetic coils having a larger diameter than the internal magnetic coils, one or more mirror magnetic coils co-axial with the center axis of the enclosure, and one or more magnetic reconnection coils co-axial with the center axis of the enclosure, wherein the one or more magnetic reconnection coils, when pulsed by a power source, are disposed to reconfigure one or more magnetic fields within the enclosure. The reconfiguration, or magnetic reconnection, of the one or more magnetic fields is disposed to increase energy in the magnetic fields, thereby facilitating the conditions operable to generate plasma, and further, when the magnetic fields are collapsed, releasing the energy into the plasma.

Abstract: A process for depositing a coating on a glass substrate includes co-sputtered simultaneously by a plasma, in one and the same chamber of the vacuum deposition device, a first constituent made of a material consisting of an oxide, a nitride or an oxynitride of a first element and a second constituent consisting of the metallic form of a second element. The process also includes introducing a hydride, a halide or an organic compound of a third element, different than the first element, into the plasma, to recover the substrate covered with the coating comprising the first, second and third elements at the outlet of the device. The coating consists of metal nanoparticles of the second element dispersed in an inorganic matrix of the first and third elements. The coating displays a plasmon absorption peak in the visible region.

Abstract: A hard coating film of a coated cutting tool contains Al within a range of 70 at % to 80 at % and Ti within a range of 20 at % to 30 at % with respect to a total amount of metallic (including metalloid) elements, and contains Ar of 0.50 at % or less with respect to a total amount of the metallic elements (including metalloid) and nonmetallic elements. The film has a diffraction peak due to each of a TiN (111) plane, a TiN (200) plane, and a TiN (220) plane of an fcc structure and an AlN (100) plane and an AlN (002) plane of a hcp structure, in which the diffraction peak of the TiN (200) plane indicates a maximum intensity and an intensity of the diffraction peak due to the TiN (111) plane is next thereafter. The average crystal grain size is within a range of 5 nm to 50 nm.

Abstract: Provided is an arc evaporation source capable of stably retaining an arc spot on the front end surface of a target and apparatus downsizing. An arc evaporation source includes a target to be melted and vaporized from its front end surface by arc discharge and at least one magnet disposed apart from a side surface of the target radially thereof. The magnet is disposed to form a magnetic field satisfying conditions a) and b) below, on the side surface, in a region of up to 10 mm from the front end surface axially of the target: a) an angle which magnetic lines of force forms with the side surface of the target is 45 degrees or less; and b) a component of the strength of the magnetic lines of force along the axial direction of the target is 200 G or more.

Abstract: A coating system includes a coating chamber having a peripheral chamber wall, a top wall, and a bottom wall. The peripheral chamber wall defines a chamber center. A plasma source is positioned at the chamber center. The coating system also includes a sample holder that holds a plurality of substrates to be coated which is rotatable about the chamber center at a first distance from the chamber center. A first isolation shield is positioned about the chamber center at a second distance from the chamber center, the first isolation shield being negatively charged.

Abstract: The invention relates to an electrode arrangement (10) for electrochemically treating a liquid. The electrode arrangement (10) has two electrodes (2), each of which has at least one electrode surface (4) and at least one through-flow chamber (34) with at least one inlet (22) and at least one outlet (24). The at least one through-flow chamber (34) is delimited on at least one first face by at least one electrode (2) which has a structure (8) on its electrode surface (4) such that a distance between the electrode surface (4) and a second through-flow chamber (34) face lying opposite the first face is varied.

Abstract: Disclosed herein is a propulsion system comprising: a solid conductive or semiconductive cathode (130); an anode (110) having a potential difference relative to said cathode (130), said potential difference creating an electric field between said anode (110) and said cathode (130); and an insulated trigger (150) adapted to trigger an arc discharge from a point on a upper surface of said cathode (130) in pulses, when said trigger (150) and cathode (130) are substantially in a vacuum, said trigger being bounded within the cathode so that the point at which the arc is triggered is located on the upper surface of said cathode.

Abstract: A method to filter macro particles in a cathodic arc physical vapor deposition (PVD) in vacuum is described, said method comprising the step of evaporating a material from a solid source by means of application of the arc on the source, forming a plasma comprising electrons, micro particles (vapor) and ions of evaporated material, together with macro particles larger in size than the micro particles and ions. The arc is moved on the source at a speed (superficial speed) at which the electrons, the micro particles and the ions of material evaporated at a second point deviate, from a path towards a substrate to be coated facing the source, the macro particles formed at a first point previously passed over by the arc, so as to self-clean the plasma of the macro particles and allow condensation of only the cleaned plasma on the substrate.

Abstract: The invention relates to a method for electrochemically producing electrolyzed water in an electrode arrangement (10) which has an anode chamber and a cathode chamber that are separated by an ion-selective membrane (30). The anode chamber is delimited on at least one side by at least one anode (2), and the cathode chamber is delimited on at least one side by at least one cathode (2). In the method: a) water, in particular distilled water or ultra purified water, in which an electrolyte is located, is conducted through the anode chamber, b) water, in particular distilled water or ultra purified water, is conducted through the cathode chamber, c) the water, in particular the distilled water or the ultra-purified water, is mixed and in particular set into a turbulent flow in the anode chamber and/or cathode chamber, and d) an electric voltage is applied to the anode and the cathode such that electrolyzed water is produced in the cathode chamber.

Abstract: A stinger for a cathodic arc vapor deposition system includes a head with a reduced area contact interface.

Abstract: A reactor includes a plasma duct; a gas inlet, at a distal end of the plasma duct, for receiving a gas; a gas outlet at a proximal end of the plasma duct for removing a portion of the gas to generate a gas flow through the plasma duct; a separating baffle positioned between the plasma duct and the gas outlet for restricting gas flow to maintain high pressure in the plasma duct; a shielded cathodic arc source positioned in a cathode chamber at the proximal end; a remote anode, positioned in the plasma duct, for holding a substrate and cooperating with the cathodic arc source to generate an electron flow opposite the gas flow, to initiate a plasma discharge perpendicular to the remote anode at least in vicinity of the remote anode and deposit ions of the plasma discharge on the substrate to form a diamond coating.

Abstract: A coated cutting tool includes a body and a hard and wear resistant coating on the body. The coating has at least one metal based nitride layer, wherein the layer is a nitrogen deficient (Ti1-xAlx)Ny layer with 0<x<0.7 and 0.4<y<1 and a layer thickness between 0.5 ?m and 15 ?m.

Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material having an upper stem flange that supports the platen, and a backside gas tube made of ceramic material that is located in an interior of the stem.

Abstract: A system and method for producing graphene includes a heating block, substrate, motor and collection device. The substrate is arranged about the heating block and is configured to receive heat from the heating block. A motor is connected to the substrate to rotate the substrate about the heating block. A cathode and anode are configured to direct a flux stream for deposit onto the rotating substrate. A collection device removes the deposited material from the rotating substrate. A heating element is embedded in the heating block and imparts heat to the heating block. The heating block is made of cement or other material that uniformly disperses the heat from the heating element throughout the heating block. The flux stream can be a carbon vapor, with the deposited flux being graphene.

Abstract: A method for producing an oxidation barrier layer on a workpiece substrate in which the oxidation barrier layer is produced by means of physical deposition from the gas phase (PVD) and is an oxide that is materially related to the uncoated surface of the workpiece.

Abstract: A method of operating a deposition apparatus is provided. The method comprises: Deposition of an evaporated source material on a substrate by guiding the evaporated source material from one or more outlets of an evaporation source toward the substrate, wherein part of the evaporated source material is blocked by and attaches to a shielding device arranged between the one or more outlets and the substrate, followed by a cleaning of the shielding device by at least locally heating the shielding device for releasing at least part of the attached source material from the shielding device. According to a further aspect, a deposition apparatus is provided that can be operated according to the described methods.

Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.

Abstract: Plasma etch-cleaning of substrates is performed by means of a plasma discharge arrangement comprising an electron source cathode (5) and an anode arrangement (7). The anode arrangement (7) comprises on one hand an anode electrode (9) and on the other hand and electrically isolated therefrom a confinement (11). The confinement (11) has an opening (13) directed towards an area (S) of a substrate (21) to be cleaned. The electron source cathode (5) and the anode electrode (9) are electrically supplied by a supply circuit with a supply source (19). The circuit is operated electrically floating.

Abstract: The present invention discloses a method for fabricating an electrochromic device, which adopts the vacuum cathodic arc-plasma deposition to comprise five layers with an ionic conduction layer (electrolyte) in contact with an electrochromic (EC) layer and an ion storage (complementary) layer, all sandwiched between two transparent conducting layers sequentially on a substrate. The method owns superior deposition efficiency and the fabricated thin film structures have higher crystalline homogeneity. In addition, thanks to the nanometer pores in the thin film structures, the electric capacity as well as the ion mobility are greater. Consequently, the reaction efficiency for bleaching or coloring is enhanced.

Abstract: The invention relates to an arc deposition device, comprising a cathode, an anode, as well as a voltage source for putting the anode at positive potential relative to the cathode. The device also comprises magnetic elements, which cause a magnetic field over the cathode surface, wherein the anode is arranged in the vicinity of the cathode in such a way that the magnetic field lines exiting from the cathode surface hit the anode.

Abstract: Systems and methods for state-based adjustment of power and frequency are described. A primary generator of a system includes a primary power supply for supplying a primary radio frequency (RF) signal to an electrode. The primary generator further includes an automatic frequency control (AFC) to provide a first frequency input to the primary power supply when a pulsed signal is in a first state. A secondary generator of the system includes a secondary power supply for supplying a secondary RF signal to the electrode. The secondary generator also includes an AFC to provide a second frequency input to the secondary power supply when the pulsed signal is in the first state. The secondary generator includes an AFC to provide a third frequency input to the secondary power supply when the pulsed signal is in a second state. The system includes a digital pulsing source for generating the pulsed signal.

Abstract: A short bar for connecting terminal blocks of two motor driving units which drive a motor includes a strip-plate-like fixed portion which has a through hole into which a screw for fixing is inserted and which is fixed to the terminal block of the motor driving unit with the screw, a first connection portion which is provided on one end of the fixed portion, and a second connection portion which is provided on the other end of the fixed portion, wherein the first connection member has a configuration that the first connection portion and the second connection portion of another shot bar can be connected electrically and mechanically with each other through a relative movement in the thickness direction of the fixing member.

Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and a backside gas tube made of metallized ceramic material that is located in an interior of the stem. The metallized ceramic tube can be used to deliver backside gas to the substrate and supply RF power to an embedded electrode in the pedestal.

Abstract: A coating system includes a vacuum chamber and a coating assembly. The coating assembly includes a vapor source, a substrate holder, a remote anode electrically coupled to the cathode target, and a cathode chamber assembly. The cathode chamber assembly includes a cathode target, an optional primary anode and a shield which isolates the cathode target from the vacuum chamber. The shield defines an opening for transmitting an electron emission current of a remote arc discharge from the cathode target to the remote anode that streams along the target face long dimension. A primary power supply is connected between the cathode target and the primary anode while a secondary power supply is connected between the cathode target and the remote anode. Characteristically, a linear remote anode dimension and a vapor source short dimension are parallel to a dimension in which an arc spot is steered along the cathode target.

Abstract: A chipping-proof nonmetal inorganic solid-state material is characterized in that the inorganic solid-state material has, in at least a part of a surface thereof, a surface structure in which a network of recesses and protuberances surrounded by the recesses are formed, the protuberances have an average width of 5 nm to 50 nm, a physical property of the surface structure differs from the physical property of an interior of the inorganic solid-state material lying below the surface structure, and there is no solid-solid interface between the surface structure and the interior of the inorganic solid-state material.

Abstract: Provided are substrate processing systems and methods of managing the same. The method may include displaying a notification for a preventive maintenance operation on a chamber, performing a maintenance operation on the chamber, performing a first optical test, and evaluating the preventive maintenance operation. The first optical test may include generating a reference plasma reaction, measuring a variation of intensity by wavelength for plasma light emitted from the reference plasma reaction, and calculating an electron density and an electron temperature from a ratio in intensity of the plasma light.

Abstract: The invention relates to a method for coating work pieces in a vacuum treatment system having a first electrode embodied as a target, which is part of an arc vaporization source. Using the first electrode, an arc is operated with an arc current and vaporizes material. A bias voltage is applied to a bias electrode, which includes a second electrode that is embodied as a work piece holder, together with the work pieces. Metal ion bombardment is carried out either to pretreat the work pieces or in at least one transition from one layer to an adjacent layer of a multilayer system, so that neither a significant material removal nor a significant material buildup occurs, but instead, introduces metal ions into a substrate surface or into a layer of a multilayer system.

Abstract: The present invention provides a method for depositing aluminum on a permanent Nd—Fe—B magnet including a step of cooling the chamber and the arc source by feeding a fluid of water at a cooling temperature of between 0° C. and 5° C. through the chamber and the arc source. The method also includes a step of adjusting a target source and a control magnet of the arc source in the chamber of the multi-arc ion plating apparatus to define a predetermined distance of between 1 cm and 10 cm. The step of depositing the film of aluminum further including steps of applying a current of between 50 A and 70 A and an electrical potential of between 100V and 200V to the target source of aluminum and directing the ions of aluminum using the arc source to the purified permanent Nd—Fe—B magnet for a time period of between 0.5 hours and 5 hours.

Abstract: A cathodic arc coating apparatus includes a vessel, a cathode disposed in the vessel, and a stinger assembly. The stinger assembly includes a first magnetic field generator disposed in a first stinger cup in selective contact with the cathode. The first stinger cup has at least a first electrically conductive cup portion spaced from a second electrically conductive cup portion by a thermally insulating layer therebetween.

Abstract: This disclosure provides systems, methods, and apparatus related to blocking macroparticles in deposition processes utilizing plasmas. In one aspect, an apparatus includes a cathode, a substrate holder, a first magnet, a second magnet, and a structure. The cathode is configured to generate a plasma. The substrate holder is configured to hold a substrate. The first magnet is disposed proximate a first side of the cathode. The second magnet is disposed proximate a second side of the substrate holder. A magnetic field exists between the first magnet and the second magnet and a flow of the plasma substantially follows the magnetic field. The structure is disposed between the second side of the cathode and the first side of the substrate holder and is positioned proximate a region where the magnetic field between the first magnet and the second magnet is weak.

Abstract: The present invention relates to an ignition device for igniting a high-current discharge of an electrical arc evaporator in a vacuum coating system. Ignition is performed by means of mechanically closing and opening a contact between the cathode and the anode. Contact is established by means of an ignition finger that can move on a forced path. On account of the forced path, the ignition finger can be moved by means of a simple mechanical drive to a park position, which is protected against coating, and said ignition finger can also be used to ignite a second target.

Abstract: A film deposition apparatus includes: a plasma generating section configured to generate plasma between a cathode target and an anode; a film deposition chamber in which a base material is placed; and a magnetic-field filter section configured to remove a particle from the plasma by a magnetic field and to transfer the plasma to the film deposition chamber. The magnetic-field filter section includes: a first housing area to which a first voltage is applied; and a second housing area, provided downstream of the first housing area in the moving direction of the plasma, to which a second voltage is applied.

Abstract: A hard and wear resistant coating for a body includes at least one metal based nitride layer having improved high temperature performance. The layer is (Zr1-x-zSixMez)Ny with 0<x<0.30, 0.90<y<1.20, 0?z<0.25, and Me is one or more of the elements Y, Ti, Nb, Ta, Cr, Mo, W and Al, comprised of a single cubic phase, a single hexagonal phase or a mixture thereof, with a cubic phase of a sodium chloride structure and a thickness between 0.5 ?m and 15 ?m. The layer is deposited using cathodic arc evaporation and is useful for metal cutting applications generating high temperatures.

Abstract: An apparatus and method for generating a Contact Glow Plasma Discharge in an electrolyte such as 7% K2CO3. A Shrouded Toroidal Anode is partially submerged in the electrolyte directly above a Flat Torus Cathode (totally submerged in the electrolyte), spaced approximately 50 mm apart, and the two electrodes are arranged in a concentric manner. A potential difference is applied from the cathode to the anode causing gas to be formed on the cathode. This is followed by a contact glow plasma being formed on the surface of the cathode and electromagnetically confined by a Spheromark formed by the configuration of the electrodes. This confinement of the plasma prevents a plasma arc from consuming the anode, which in turn allows for the application of 12,000 Watts and the occurrence of “non-linear electron resonance heating”. The effects of nonlinear series resonance increase the total power dissipation by factors of 2-5 for low pressure capacitive plasmas.

Abstract: The invention pertains to a method for the production of coatings by physical vapor deposition (PVD), wherein a binary target or a target with more than two constituents is evaporated in a curvilinear cathodic arc discharge, causing the ions with different masses (elements) to be splitted and the ion splitting results in variations for the ratio of the different masses (elements) at different positions in the deposition chamber.

Abstract: In order to provide a charged particle beam apparatus capable of high resolution measurement of a sample at any inclination angle, a charged particle beam apparatus for detecting secondary charged particles (115) generated by irradiating a sample (114) with a primary charged particle beam (110) is provided with a beam tilt lens (113) having: a yoke magnetic path member (132) and a lens coil (134) to focus the primary charged particle beam (110) on the sample (114); and a solenoid coil (133) configured to arrange the upper end on the side surface of the yoke magnetic path member (132) and arrange the bottom end between the tip end of the pole piece of the yoke magnetic path member (132) and the sample (114) in order to arbitrarily tilt the primary charged particle beam (110) on the sample (114).