Abstract: Electrochemical plating (ECP) apparatuses with auxiliary cathodes to create uniform electric flux density. An ECP apparatus for electrochemical deposition includes an electrochemical cell with an electrolyte bath for electrochemically depositing a metal on a substrate. A main cathode and an anode are disposed in the electrolyte bath to provide a main electrical field. A substrate holder assembly holds a semiconductor wafer connecting the cathode. An auxiliary cathode is disposed outside the electrochemical cell to provide an auxiliary electrical field such that a flux line density at the center region of the substrate holder assembly substantially equals that at the circumference of the substrate holder assembly.

Abstract: The present invention advantageously provides for, in different embodiments, low-cost deposition techniques to form high-quality, dense, well-adhering Group IBIIIAVIA compound thin films with macro-scale as well as micro-scale compositional uniformities. In one embodiment, there is provided a method of growing a Group IBIIIAVIA semiconductor layer on a base, and includes the steps of depositing on the base a film of Group IB material and at least one layer of Group IIIA material, intermixing the film of Group IB material and the at least one layer of Group IIIA material to form an intermixed layer, and forming over the intermixed layer a metallic film comprising at least one of a Group IIIA material sub-layer and a Group IB material sub-layer. Other embodiments are also described.

Abstract: A multi step process, which forms a Group VIA material layer, such as a selenium (Se) layer, having a thickness greater than 500 nanometers. The process includes electroplating a Se material layer, which has an amorphous micro-structure and which exhibits high electrical resistivity, on a workpiece and subsequently annealing the Se layer. Annealing process transforms the amorphous structure of the Se layer into a crystalline structure which is conductive. After the annealing, another Se layer can be electroplated onto the annealed Se layer. The electroplating and annealing steps can be repeated until the desired Se layer thickness is reached.

Abstract: An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure.

Abstract: A substrate processing apparatus comprises an applying part for applying droplets of cleaning solution onto a substrate, a ring-shaped induction electrode located close to an outlet of the applying part, and an applying part moving mechanism for moving the applying part. In the substrate processing apparatus, electric potential difference is generated between the induction electrode and a cleaning solution tube in the applying part, positive charge is induced on the cleaning solution, and the substrate is cleaned by the droplets of the cleaning solution, whereby the substrate can be suppressed to be negatively charged during cleaning. Concurrently with movement of the applying part and application of the cleaning solution, the electric potential difference is controlled on the basis of the characteristics of charging of the substrate and relative position of the applying part to the substrate. It is possible to improve uniformity of distribution of electric potentials on the substrate.

Abstract: A method of production and a method of polishing a semiconductor device and a polishing apparatus, capable of easily flattening an initial unevenness of a metal film, excellent in efficiency of removal of an excess metal film, and capable of suppressing damage to an interlayer insulation film below the metal film when flattening the metal film by polishing, the polishing method including the steps of interposing an electrolytic solution including a chelating agent between a cathode member and the copper film, applying a voltage between the cathode member used as a cathode and the copper film used as an anode to oxidize the surface of the copper film and forming a chelate film of the oxidized copper, selectively removing a projecting portion of the chelate film corresponding to the shape of the copper film to expose the projecting portion of the copper film at its surface, and repeating the above chelate film forming step and the above chelate film removing step until the projecting portion of the copper film

Abstract: A method for making semiconductor interconnect features in a dielectric layer is provided. The method includes depositing a copper seed layer over a barrier layer that is formed over the dielectric layer and into etched features of the dielectric layer. The copper seed layer is then treated to remove an oxidized layer from over the copper seed layer. The method then moves to electroplating a copper fill layer over the treated copper seed layer. The copper fill layer is configured to fill the etched features of the dielectric layer.

Abstract: There is provided an electrolytic processing device including: a processing electrode to be brought into contact with or close to a workpiece; a feeding electrode for supplying electricity to the workpiece; an ion exchanger disposed in at least one of spaces between the workpiece and the processing electrode, and between the workpiece and the feeding electrode; a power source for applying a voltage between the processing electrode and the feeding electrode; and a liquid supply section for supplying a liquid to the space between the workpiece and at least one of the processing electrode and the feeding electrode, in which the ion exchanger is present. A substrate processing apparatus having the electrolytic processing device is also provided.

Abstract: Certain mechanisms of a plating apparatus address problems associated with interaction between plating solutions or other processing solutions and the components of the plating apparatus (such as the electrical contacts). For example, a circumferential spray skirt around the interface of a “cup” and “cone” in the plating apparatus protects these features during plating. A shield mechanism contacts the cup and/or cone at the periphery of their interface to provide a fluid resistant seal. In some cases, the cone includes an outer circumferential lip that engages a complementary surface of the cup for this purpose. Further, a mechanism is provided for raising and lowering the work piece with the cone in order to allow in situ rinsing of the work piece and/or regions of the cup.

Abstract: A method of electro-plating comprises providing an anode current for a target, applying an electron beam to the surface of a target and passing electrolyte between said target and anode, thereby to deposit material on said target. An electron beam gun directs an electron beam onto web while anode provides a current thereby depositing material on the web.

Abstract: A method and apparatus for treating an aqueous electroplating bath solution. The method comprises continuously agitating the solution; adjusting the pH of the solution, adjusting the temperature of the solution while adding an amount of hydrogen peroxide sufficient to promote dissolution of the hydrogen peroxide and generation of hydroxyl radicals; and adding an amount of an iron-containing compound so as to increase the rate of dissolution of the hydrogen peroxide to hydroxyl radicals so as to oxidize the organic compounds; whereby the total amount of organic carbon compounds in the solution is reduced. The apparatus comprises a treatment vessel, a pump for transferring a portion of the solution from the vessel to a mixing tank and for transferring a second portion of the solution to a heat exchanger for heating or cooling the second portion of the solution and a pump for transferring hydrogen peroxide to the vessel.

Abstract: A process tool for electrochemically treating a substrate is configured to reduce the oxygen concentration and/or the sulfur dioxide concentration in the vicinity of the substrate so that corrosion of copper may be reduced. In one embodiment, a substantially inert atmosphere is established within the process tool including a plating reactor by providing a continuous inert gas flow and/or by providing a cover that reduces a gas exchange with the ambient atmosphere. The substantially inert gas atmosphere may also be maintained during further process steps involved in electrochemically treating the substrate including required transportation steps between the individual process steps.

Abstract: A method and associated apparatus for electro-chemically depositing a metal film on a substrate having a metal seed layer. The apparatus comprises a substrate holder that holds the substrate. The electrolyte cell receives the substrate in a processing position. The actuator is connected to the substrate holder and adjustably positions the substrate relative to the electrolyte cell. The method involves electro-chemically depositing a metal film on a substrate having a metal seed layer comprising disposing the substrate in an electrolyte cell that is configured to receive the substrate. The method comprises adjustably positioning the substrate relative to the electrolyte cell.

Abstract: A mobile zinc stripping device for stripping zinc from cathodes comprising a moveable base frame, a cathode support frame to support the cathodes during stripping, a stripping assembly for stripping the zinc sheets from the cathodes and at least one power source for powering the stripping assembly. The stripping assembly includes a lateral stripper for separating an upper edge of a zinc sheet from each of the cathodes, the lateral stripper being adapted to bias away from the cathode immediately upon entering between the zinc sheet and the cathode, and a scraping device for completing removal of the sheet from each said cathode. The device also includes a cathode cleaner and a bottom up stacker assembly for stacking zinc sheets.

Abstract: The present invention provides a solder plating system with automatic monitoring of wash fluid pressure. The system automatically activates an alarm and/or initiates shutdown of a solder plating machine when the pressure reading indicates a failure of the wash fluid supply. The system thereby reduces the number of parts that are affected by failures in the wash fluid supply system. In some cases, problems with the wash fluid supply are detected before any parts are affected.

Abstract: The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. One aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results.

Abstract: The present invention provides a plating method and apparatus, which is capable of introducing plating solution into the fine channels and holes formed in a substrate without needing to add a surface active agent to the plating solution, and capable of forming a high-quality plating film having no defects or omissions. The plating method for performing electrolytic or electroless plating of an object using a plating solution comprises: conducting a plating operation after or while deaerating dissolved gas in the plating solution; and/or conducting a preprocessing operation using a preprocessing solution after or while deaerating dissolved gas in the preprocessing solution and subsequently conducting the plating operation.

Abstract: A processing container (610) for providing a flow of a processing fluid during immersion processing of at least one surface of a microelectronic workpiece is set forth. The processing container comprises a principal fluid flow chamber (505) providing a flow of processing fluid to at least one surface of the workpiece and a plurality of nozzles (535) disposed to provide a flow of processing fluid to the principal fluid flow chamber. The plurality of nozzles are arranged and directed to provide vertical and radial fluid flow components that combine to generate a substantially uniform normal flow component radially across the surface of the workpiece. An exemplary apparatus using such a processing container is also set forth that is particularly adapted to carry out an electroplating process.

Abstract: A method and a device are described for producing a galvanic layer having a defined spatial extent on an electrically conductive substrate surface having any shaped contour at all. In this context, an electrolyte jet from a nozzle is applied to the substrate, and a current flows between the nozzle and the substrate surface essentially via the electrolyte jet. The device is provided with a pump for delivering an electrolyte from an electrolyte reservoir to the nozzle and for producing an electrolyte jet directed at the substrate surface. Moreover, the device has a reactor in which are arranged the substrate to be coated, as well as the nozzle. The substrate and the nozzle are connected to a direct current source, and a configuration of the substrate and of the nozzle in the reactor is variable during the coating process.

Abstract: RF and microwave radiation directing or controlling components are provided that may be monolithic, that may be formed from a plurality of electrodeposition operations and/or from a plurality of deposited layers of material, that may include switches, inductors, antennae, transmission lines, filters, and/or other active or passive components. Components may include non-radiation-entry and non-radiation-exit channels that are useful in separating sacrificial materials from structural materials. Preferred formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g. selective etching operations and/or back filling operations).

Abstract: Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

Abstract: The present invention relates to a method and apparatus for depositing metal on a substrate. More particularly, one embodiment of the metal deposition cell comprising a cell base, an anode, and a cell top. The cell base at least partially defines an interior recess. The anode mounted within the interior recess to the cell base. The cell top is removably mounted to the cell base. In one embodiment, a method of removing a modular metal deposition cell from a deposition cell mount is provided. The modular metal deposition cell comprises a cell top and a cell bottom. The method comprises unfastening a fastener that secures the cell top to the cell bottom, and also fastens the cell top and the cell bottom to the deposition cell mount. The cell top or the cell bottom is then removed from the deposition cell mount.

Abstract: One or more fractal antennas are produced in an electroforming circuit. A stainless steel on glass mandrel is covered with a dielectric in an inverse image of a fractal antenna to be formed. The portion of the stainless steel uncovered by the dielectric is chemically washed so that a fractal antenna formed thereon can be more efficiently removed. The mandrel is made a cathode in an electroforming circuit, which results in a fractal antenna being formed on the mandrel. The fractal antenna is separated from the mandrel and mounted on a rigid or semi-rigid substrate.

Abstract: The present invention relates to a method and apparatus for separating out metal copper according to an electroplating of copper using, for example, a solution of copper sulfate to produce copper interconnections on a surface of a substrate. The substrate is brought into contact, at least once, with a processing solution containing at least one of organic substance and sulfur compound which are contained in a plating solution. Thereafter, the substrate is brought into contact with the plating solution to plate the substrate.

Abstract: Contact assemblies, electroplating machines with contact assemblies, and methods for making contact assemblies that are used in the fabrication of microelectronic workpieces. The contact assemblies can be wet-contact assemblies or dry-contact assemblies. A contact assembly for use in an electroplating system can comprise a support member and a contact system coupled to the support member. The support member, for example, can be a ring or another structure that has an inner wall defining an opening configured to allow the workpiece to move through the support member along an access path. In one embodiment, the support member is a conductive ring having a plurality of posts depending from the ring that are spaced apart from one another by gaps. The contact system can be coupled to the posts of the support member. The contact system can have a plurality of contact members projecting inwardly into the opening relative to the support member and transversely with respect to the access path.

Abstract: An apparatus and method for processing microelectronic workpieces. The apparatus can include a housing at least partially enclosing a process environment, with a first processing chamber and a second processing chamber positioned within the housing. The first processing chamber can have a first electrically powered device, such as a first anode and/or a first cathode, and the second processing chamber can have a second electrically powered device, such as a second anode and/or a second cathode. A first power supply is electrically coupled to the first processing chamber to provide electrical power to at least one of a first anode and a first cathode, and a second power supply is electrically coupled to the second processing chamber to provide electrical power to at least one of the second anode and the second cathode.

Abstract: The invention relates to a device for separating metal deposit from a mother plate used as a cathode in an electrolytic process, as metal electrorefining or metal electrowinning, in which device there is a supporting member for supporting the cathode to be treated, a member for releasing at least partly a metal deposit grown during the electrolytic process on a surface of the mother, and a member for support the released metal deposit. According to the invention the mother plate of a cathode (1, 21, 31, 41, 51) is provided with a growth affecting means (16, 24, 36, 43, 53) for creating an irregularity in the growth of the metal deposit (4) to be used as a hinged member when the metal deposit (4) is tilted to the mother plate of the cathode (1, 21, 31, 41, 51) in order to break the metal deposit (4) in two separate pieces along the irregularity in the growth.

Abstract: An electrochemical cell for electrolytically contacting and electrochemically inspecting surfaces which makes electrolytic contact with the surface through a body utilizing capillary action. The capillary force between surface and body utilizing capillary action prevents the electrolyte from escaping from the cell without the use of a sealing ring. The body utilizing capillary action allows the electrolyte to flow from an open porous container and wet the surface when the electrochemical cell contacts the surface. Escape of material from the open cell is prevented by the capillary action of the container and of the tip when the electrochemical cell is lifted from the surface. The electrochemical cell is independent of the force of gravity and enables measurements to be made on surfaces of any orientation. The electrochemical cell may be used to perform a multiplicity of electrochemical investigations and processes.

Abstract: A method of electroplating comprises providing an anode current for a target, applying an electron beam to the surface of a target and passing electrolyte between said target and anode, thereby to deposit material on said target. An electron beam gun directs an electron beam onto web while anode provides a current thereby depositing material on the web.

Abstract: A method and apparatus for plating metal onto a substrate including positioning an anode spacer including a anode surface and a substrate contact surface with the substrate contact surface immediate a deposition surface of a substrate. The apparatus generally includes a plating cell configured to contain a plating solution therein, an anode disposed in the plating solution, and an anode spacer positioned in the plating cell, the anode spacer having an anode surface, and a substrate contact surface positioned immediate a deposition surface of the substrate, the anode spacer configured to communicated the plating solution therethrough. The method generally includes positioning a substrate in a plating cell, positioning an anode spacer immediate a deposition surface of the substrate, and flowing a plating solution through the anode spacer to plate a metal onto the deposition surface.

Abstract: The invention relates to an apparatus for treating water by means of an electric field. An Anode and a cathode are arranged in a treatment chamber. The cathode has a plurality of parallel pins. Seed crystals are deposited on these pins. There are means for separating these seed crystals from the pins. The apparatus is to be of simple design and is to have high efficiency with regard to the formation of seed crystals. The cathode is to be kept free from lime depositions. To this end, the seed crystals are separated or stripped from the pins by means of a perforated disc. The pins extend through the holes of this perforated disc. The perforated disc is guided over the pins. The perforated disc can be moved by water pressure or by an electric motor. The electric motor has as second function the actuation of a safety valve controlled by a monitoring device.

Abstract: Local electrochemical deplating of alignment mark regions of semiconductor wafers is disclosed. A tank holds an electrolytic solution. A primary cathode submersed within the solution is at least partially insulated therefrom. An electrochemically metal plated semiconductor wafer submersed within the solution acts as an anode, and has alignment mark regions. Extension cathodes submersed within the electrolytic solution are each at least partially insulated, except for a part of a first end and a second end thereof. The first end part is closely positioned over a corresponding alignment mark region, whereas the second end is situated on a corresponding exposed part of the primary cathode. A power source has its positive terminal operatively coupled to the primary cathode and its negative terminal operatively coupled to the wafer. Current from the power source electrochemically deplates the metal substantially from the alignment mark regions, substantially exposing the alignment marks within these regions.

Abstract: A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

Abstract: An electric field adjusting apparatus for adjusting electric field distribution inside an electroplating bath is provided. The electric field adjusting apparatus has a regulation plate with a plurality of evenly distributed through holes. A plurality of evenly distributed through holes with a smaller total through hole area is formed in the regulation plate that corresponds to an area of a plated film on a wafer that conducts a larger current during an electroplating process (close to the edge of the wafer). Meanwhile, a plurality of evenly distributed through holes with a larger total through hole area is formed in the regulation plate that corresponds to an area of the plated film on the wafer that conducts a smaller current during an electroplating process (close to the central region of the wafer). Furthermore, the total area of through holes around a particular location is inversely proportional to the current density in the plated film over the plating object.

Abstract: An improved apparatus for treating plate-like workpieces with a designated chemical solution, including printed circuit boards, includes: (1) a tray for holding the chemical solution, with the tray having an open top which is configured to receive a horizontally-oriented workpiece, with the tray having a top edge with a portion of the edge forming a dam over which the solution may flow and an opening in its lower portion where the solution can enter the tray, (2) a reservoir tank situated below the tray, (3) a feed line connecting the reservoir tank and tray opening, (4) a drain that returns the solution that overflows the tray top edge to the reservoir tank, and (5) a pump that circulates the solution from the tank to the tray and over the horizontally situated workpiece.

Abstract: The present invention generally provides an apparatus and method for removing contaminants from a plating solution. The apparatus generally includes a plating cell having an electrolyte inlet and an electrolyte drain, an electrolyte storage unit in fluid communication with the electrolyte inlet, and an electrodialysis chamber in fluid communication with the electrolyte drain, wherein the electrodialysis chamber is generally configured to receive a portion of used electrolyte solution and remove contaminants therefrom. The method generally includes supplying an electrolyte solution to a copper plating cell, plating copper onto a substrate in the plating cell with the electrolyte solution, removing used electrolyte solution from the plating cell, and refreshing a portion of the used electrolyte solution with an electrodialysis cell.

Abstract: The present invention relates to methods and apparatus for plating a conductive material on a substrate surface in a highly desirable manner. The invention removes at least one additive adsorbed on the top portion of the workpiece more than at least one additive disposed on a cavity portion, thereby allowing plating of the conductive material take place before the additive fully re-adsorbs onto the top portion and causing greater plating of the cavity portion relative to the top portion.

Abstract: The plating method comprises the steps of dividing a region, to be plated, into a group of mesh-like zones, measuring a plating area of each of the zones, comparing the measurement values of the plating areas and judging whether or not the plating area has any variance, and conducting a design change, on patterns contained in this zone, to eliminate the variance.

Abstract: Contact assemblies for electrochemical processing of microelectronic workpieces. The contact assemblies can comprise a support member that includes an inner wall which defines an opening configured to receive the workpiece and a plurality of contacts. The individual contacts include a conductor and a cover. The conductor can comprise a proximal section projecting inwardly into the opening relative to the support member, a distal section extending from the proximal section, and an inert exterior at least at the distal section. The cover comprises a dielectric element that covers at least the proximal section of the conductor, but does not cover at least a portion of the distal section of the core. The exposed portion of the distal section of the core, accordingly, defines a conductive contact site for contacting a conductive layer (e.g., a seed layer) on the workpiece.

Abstract: A cathode contact pin for making electrically conductive contact with a conductive area for carrying out an electrodeposition process including a stem region disposed adjacent a tip region said stem region for interfacing with an electrical source of power for carrying electrical power to said tip region said tip region having a radius of curvature forming a tip region contact surface for contacting a metal contact pad region such that upon contact a contacting portion of the tip region contact surface is confined within an area defined by the metal contact pad region.

Abstract: A multi-process workpiece apparatus is disclosed. The multi-process workpiece apparatus includes an electrochemical deposition apparatus which has a wafer contacting surface having at least one electrical conductor disposed therein. The multi-process workpiece apparatus also includes a planarization apparatus and at least one workpiece handling robot configured to transport a workpiece from the electrochemical deposition apparatus to the planarization apparatus.

Abstract: An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel.

Abstract: To electrically contact and electrolytically treat, more specifically to electroplate, very thin, electrically conductive layers, especially with a high electrolytic current, a device comprising contact carriers 4, 5, 10, 11, more specifically clamps, clips and the like, with contact elements 8 for supplying the current to the work 6 is utilized, at least the contact areas of the contact elements 8 that may be brought to contact the work 6 are made from an elastic, electrically conductive material.

Abstract: A plating system in which a plating process of a semiconductor substrate held by a wafer holder provided on the top of a plating tank is conducted while jetting the plating liquid upward from the lower side in the plating tank, wherein a plurality of nozzles for removing bubbles adhered on the surface of the semiconductor substrate are provided in the tank so that the plating liquid is jetted from the nozzles to the semiconductor substrate.

Abstract: An electroplating apparatus includes a reactor vessel having a segmented anode array positioned therein for effecting electroplating of an associated workpiece such as a semiconductor wafer. The anode array includes a plurality of ring-like anode segments which are preferably positioned in concentric, coplanar relationship with each other. The anode segments can be independently operated to create varying electrical potentials with the associated workpiece to promote uniform deposition of electroplated metal on the surface of the workpiece.

Abstract: Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.

Abstract: A substrate such as a semiconductor wafer is plated to fill a metal such as copper (Cu) or the like in interconnection grooves defined in the substrate. An apparatus for plating such a substrate has a plating chamber for holding a plating solution, the plating chamber housing an anode that is immersible in the plating solution held by the plating chamber. A plating solution ejector pipe produces an upward jet of plating solution from a plating solution supplied to the plating chamber from an external source, and a substrate holder removably holds a substrate and positions the substrate such that a surface to be plated of the substrate is held in contact with the jet of plating solution. The plating chamber has a plating solution outlet defined in a bottom thereof for discharging a portion of the supplied plating solution via through-holes defined in the anode and/or around the anode out of the plating chamber.

Abstract: In an electrochemical reactor used for electrochemical treatment of a substrate, for example, for electroplating or electropolishing the substrate, one or more of the surface area of a field-shaping shield, the shield's distance between the anode and cathode, and the shield's angular orientation is varied during electrochemical treatment to screen the applied field and to compensate for potential drop along the radius of a wafer. The shield establishes an inverse potential drop in the electrolytic fluid to overcome the resistance of a thin film of conductive metal on the wafer.

Abstract: An electrolytic cell (10) comprises a plurality of cathodes (12) interspersed among a plurality of anodes (16). The plurality of cathodes and plurality of anodes form a plurality of electrodes spaced and suspended in parallel fashion in an electrolyte solution (35). The electrolytic cell further comprises a plurality of scrapers (14). Each scraper of the plurality of scrapers is placed between each of the plurality of electrodes in parallel fashion and the scraper moves a minimal distance relative to the plurality of electrodes.

Abstract: An electroplating system (30) and process makes electrical current density across a semiconductor device substrate (20) surface more uniform during plating to allow for a more uniform or tailored deposition of a conductive material. The electrical current density modifiers (364 and 37) reduce the electrical current density near the edge of the substrate (20). By reducing the current density near the edge of the substrate (20), the plating becomes more uniform or can be tailored so that slightly more material is plated near the center of the substrate (20). The system can also be modified so that the material that electrical current density modifier portions (364) on structures (36) can be removed without having to disassemble any portion of the head (35) or otherwise remove the structures (36) from the system. This in-situ cleaning reduces the amount of equipment downtime, increases equipment lifetime, and reduces particle counts.