Abstract: Provided herein are approaches for providing a more uniform ion flux and ion angular distribution across a wafer to minimize etch yield loss resulting from etch profile variations. In some embodiments, a system may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, wherein the plasma source comprises a plasma shaper extending into the plasma chamber from a wall of the chamber housing. The plasma shaper may include a shaper wall coupled to the wall of the chamber housing, and a shaper end wall connected to the shaper wall, the shaper end wall defining an indentation extending towards the wall of the chamber housing.

Abstract: The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam deposition or etch process to correct asymmetry of depositing or etching between the inboard side and the outboard side of device structures on a wafer, while maintaining the overall uniformity of the respective deposition or etch across the full wafer.

Abstract: There is provided a film forming apparatus, including: a processing chamber having a processing space in which a film forming process is performed on a substrate; a substrate support part configured to support the substrate inside the processing chamber; at least one sputtering particle emission part including a target and configured to emit sputtering particles to the substrate from the target; and at least one etching particle emission part configured to emit etching particles having an etching action with respect to the substrate, wherein the sputtering particles emitted from the at least one sputtering particle emission part are deposited on the substrate to form a film, and a portion of the film is etched by the etching particles emitted from the at least one etching particle emission part.

Abstract: A plasma accelerating apparatus includes: a cathode (11) configured to supply electrons to a plasma acceleration region; an anode (12); a power supply (13) configured to apply a voltage between the cathode and the anode; a supply port (14) arranged on an outer circumference side of the cathode to supply a propellant to the plasma acceleration region; and a first magnetic field generator (15) configured to generate a first axial direction magnetic field in the upstream side region of the plasma acceleration region to suppress electrons supplied from the cathode from heading for the anode. Thus, the plasma accelerating apparatus and the plasma accelerating method having high thrust efficiency is provided.

Abstract: A specimen preparation device prepares a cross section of a specimen by applying an ion beam, the specimen preparation device including: an ion beam generator that generates the ion beam; a specimen holder that holds the specimen; a shield plate that shields part of the specimen from the ion beam; and a tilted plate that is placed to intersect a path of the ion beam on a downstream side of the specimen, and has an incidence surface that is tilted relative to a direction in which the ion beam is incident.

Abstract: An alignment film forming apparatus and a method are provided to form an alignment film for a liquid crystal in a single process of simultaneously executing a film deposition process of ion beam sputtering and an alignment process. The method greatly restricts the size of a substrate. An alignment film forming apparatus includes a target disposed on a top surface side of a substrate and having a sputtering surface defining a sharp angle to the top surface of the substrate, a transfer table that transfers the substrate in a predetermined direction, and an ion source disposed on the top surface side of the substrate in such a way that an ion beam is irradiated on the sputtering surface of the target. An ion beam reflected at the sputtering surface is irradiated on a sputtering film formed on the substrate.

Abstract: An IBAD apparatus includes, a target, a sputter ion source irradiating the target with sputter ions to sputter some of constituent particles of the target, a film formation region in which a base material for depositing thereon the particles sputtered from the target is disposed, and an assist ion beam irradiation device irradiating assist ion beams from a direction oblique to the direction of a normal of the film formation surface of the base material disposed in the film formation region, where the sputter ion source includes a plurality of ion guns arranged so as to be able to irradiate the target from an end portion on one side to an end portion on the other side with sputter ion beams, and current values for generating the sputter ion beams of the plurality of ion guns are set respectively.

Abstract: There is described an intaglio printing plate coating apparatus (1) comprising a vacuum chamber (3) having an inner space (30) adapted to receive at least one intaglio printing plate (10) to be coated, a vacuum system (4) coupled to the vacuum chamber (3) adapted to create vacuum in the inner space (30) of the vacuum chamber (3), and a physical vapour deposition (PVD) system (5) adapted to perform deposition of wear-resistant coating material under vacuum onto an engraved surface (10a) of the intaglio printing plate (10), which physical vapour deposition system (5) includes at least one coating material target (51, 52) comprising a source of the wear-resistant coating material to be deposited onto the 32 engraved surface (10a) of the intaglio printing plate (10).

Abstract: This invention relates an ion beam source (10) for use with a non-electrical conducting target (14) including a grid (13) for extracting ions and a power supply for supplying pass power to the grid (13) to extract the ions.

Abstract: The invention provides a new apparatus (20) and method for producing entirely new types of nanoparticles exhibiting novel properties. The apparatus comprises a vacuum chamber (22) containing a gas and feed means (1) for feeding a liquid jet (26) into the chamber and through the gas. The invention extends to the new types of nanoparticles per se, and to uses of such nanoparticles in various biomedical applications, such as in therapy and diagnosis, as well as in opto-electronics.

Abstract: The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.

Abstract: In a system and method of depositing material on a substrate, a shadow mask, including one or more apertures therethrough, in intimate contact with the substrate is provided inside of a chamber or reactor. Material ejected from a solid target material is deposited on one or more portions of the substrate after passage through the one or more apertures of the shadow mask. Desirably, a target-to-substrate distance is within a mean free path length at a specified deposition pressure. Alternatively, an electric field acts on a process gas to create a plasma that includes ionized atoms or molecules of the material that are deposited on one or more portions of the substrate after passage through the one or more apertures of the shadow mask.

Abstract: An apparatus for treating a surface of an object comprises a vacuum chamber in which the object is intended to be placed, and means, in communication with the vacuum chamber, for treating the surface of the object, comprising at least two plasma generator. The apparatus also comprises means for controlling each generator independently of any other generator. These controlling means comprise means for activating/deactivating the generator. The invention also relates to a process for treating a surface of an object.

Abstract: A method of generating a highly ionized plasma in a plasma chamber. A neutral gas is provided to be ionized in the plasma chamber at pressure below 50 Pa. At least one high energy high power electrical pulse is supplied with power equal or larger than 100 kW and energy equal or larger than 10 J, to at least one magnetron cathode in connection with a target in the plasma chamber. A highly ionized plasma is produced directly from the neutral gas in a plasma volume such that the plasma volume cross section increases during a current rise period. Atoms are sputtered from the target with the highly ionized plasma. At least part of the sputtered atoms are ionized.

Abstract: The invention provides: an ion beam generator and an ion beam plasma processing apparatus including a movable member (for example, a plug) which is capable of reducing formation of an adhering film on a sidewall of the member even when an electrode included in a grid assembly is sputtered. The ion beam generator of an aspect of the invention includes: a grid assembly provided opposed to an upper wall; a plug movable in a first direction from the upper wall toward the grid assembly and in a second direction from the grid assembly toward the upper wall; and a shield configured to shield a sidewall of the plug.

Abstract: A substrate processing method may include forming a plasma; extracting ions from the plasma and accelerating the ions to have uniform or substantially uniform directivity using a grid system; irradiating the ions at a reflector, wherein the reflector includes a plurality of reflecting plates each having a metal plate and an insulating layer on the metal plate, wherein the reflecting plates are parallel or substantially parallel such that the insulating layers are exposed to the ions; reflecting the ions incident on the reflecting plates away from the insulating layers of the reflecting plates; colliding the ions reflected away from the insulating layers with the metal plates to convert the ions into neutral beams; and irradiating the neutral beams onto a substrate to process the substrate.

Abstract: Provided is a supersonic beam apparatus including a nozzle for injecting a gas at a supersonic velocity into a vacuum; a skimmer arranged at a downstream of the nozzle; and an ionization part for ionizing a particle in a supersonic beam formed by the skimmer from the gas injected from the nozzle to form a cluster ion beam, wherein a set position of the skimmer is one of a maximum position where an amount of cluster generation in a relationship of the amount of cluster generation with respect to a distance between the nozzle and the skimmer is maximized and a position closer to the nozzle than the maximum position.

Abstract: A deposition apparatus includes a deposition source that produces a deposition flow of a deposited material and has an evaporation source with a material to be deposited therein, and a sputtering source that produces sputtering ions directed at the material to be deposited in the evaporation source. A deposition target is in facing relationship to the deposition source. The sputtering source is operated simultaneously with the evaporation source.

Abstract: The invention relates to a device for depositing a selected material on a substrate by means of ion beam sputtering, which include a plurality of targets of a selected material, each of which is bombarded by an ion beam, the lateral dimensions of each of the ion beams being less than one tenth of the lateral dimensions of the substrate.

Abstract: A film deposition apparatus includes: a chamber including a chamber wall that is formed with a window; a target holder disposed in the chamber for supporting a target; a radio frequency power device; a pole plate unit disposed in the chamber and including a first pole plate that is electrically connected to the radio frequency power device, and a second pole plate for supporting the substrate, the first and second pole plates being disposed at two opposite sides of the target holder; a vacuum device to extract air from the chamber; and a pulsed laser device to generate a laser beam capable of bombarding the target through the window.

Abstract: A coating system includes a vacuum chamber and a coating assembly positioned within the vacuum chamber. The coating assembly includes a vapor source that provides material to be coated onto a substrate, a substrate holder to hold substrates to be coated such that the substrates are positioned in front of the vapor source, a cathode chamber assembly, and a remote anode. The cathode chamber assembly includes a cathode, an optional primary anode and a shield which isolates the cathode from the vacuum chamber. The shield defines openings for transmitting an electron emission current from the cathode into the vacuum chamber. The vapor source is positioned between the cathode and the remote anode while the remote anode is coupled to the cathode.

Abstract: A system includes a collimated beam source within a vacuum chamber, a condensable barrier gas, cooling material, a pump, and isolation chambers cooled by the cooling material to condense the barrier gas. Pressure levels of each isolation chamber are substantially greater than in the vacuum chamber. Coaxially-aligned orifices connect a working chamber, the isolation chambers, and the vacuum chamber. The pump evacuates uncondensed barrier gas. The barrier gas blocks entry of atmospheric vapor from the working chamber into the isolation chambers, and undergoes supersonic flow expansion upon entering each isolation chamber. A method includes connecting the isolation chambers to the vacuum chamber, directing vapor to a boundary with the working chamber, and supersonically expanding the vapor as it enters the isolation chambers via the orifices. The vapor condenses in each isolation chamber using the cooling material, and uncondensed vapor is pumped out of the isolation chambers via the pump.

Abstract: Exemplary embodiments provide a multi-source deposition method and apparatus for the provision of coatings within relatively tight tolerances. An apparatus may be provided including control circuitry and a plurality of deposition sources for coating a substrate. The sources may be disposed a selectable distance away from the substrate and/or may be tilted at a selected angle. The control circuitry may utilize information indicative of an emission pattern associated with each of the sources to adjust a power to each of the sources during coating of the substrate. By rotating the substrate relative to the sources and/or controlling parameters such as source height, tilt angle, and source power, a substantially uniform coating thickness may be achieved on the substrate.

Abstract: An apparatus for treating an object, for example an object made of polymer for a light or headlamp of an automotive vehicle, comprises a vacuum chamber in which the object is intended to be placed; means for placing the chamber under vacuum; and ion bombardment means intended for treating the object, comprising an ion generator and at least one ion applicator intended to emit an ion beam. This apparatus comprises, in addition: a first airlock; means for selectively placing the vacuum chamber in communication with the first airlock and means for placing the first airlock under vacuum. The ion bombardment means are arranged outside of the vacuum chamber. The ion applicator is housed in the first airlock.

Abstract: A combinatorial processing chamber having an integrated magnetic confinement system is described herein. The chamber comprises source magnetic confinement assemblies that are configured to shape ion beams produced by associated sputter sources. The chamber further comprises magnetic confinement assemblies that are configured to drive a combined ion beam onto an exposed surface of the substrate to combinatorial process regions of the substrate.

Abstract: An ionization device used in an evaporation deposition device includes a main body, and an electron-beam system, a magnetic field generator all mounted to the main body. The main body includes a peripheral wall and a cavity enclosing by the peripheral wall. The electron-beam system includes an electric filament. The electric filament connects with a first power source. The electric filament and the main body connect with a direct current power source. The magnetic field generator includes a coil and a second power source connecting with the coil. An evaporation deposition device using the ionization device is also described.

Abstract: The presently disclosed technology uses dissociated fluorine and one or both of hydrogen and oxygen to assist the deposition of metal-fluoride thin films having low optical losses using ion sputter deposition. The dissociated fluorine and one or both of hydrogen and oxygen are injected into an enclosure within which the sputter deposition operations occur. The dissociated fluorine and one or both of hydrogen and oxygen assist the sputtering of metal-fluoride material from a target and/or deposition of the sputtered metal-fluoride on one or more substrates.

Abstract: The invention is directed toward a method and apparatus which can be used to allow the sputter deposition of material onto at least one article to form a coating on the same. The new form of magnetron described herein allows an increase in sputter deposition rates to be achieved at higher powers and without causing damage to the coating being created. This can be achieved by improved cooling and use of a relatively high magnetic field in the magnetron while at the same time increasing the power to the magnetron by increasing the current at a rate faster than the voltage.

Abstract: A treatment method for treating at least one surface of a solid polymer part wherein multi-energy ions X+ and X2+ are implanted simultaneously, where X is the atomic symbol selected from the list constituted by helium (He), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe), and wherein the ratio RX, where RX=X+/X2+, with X+ and X2+ expressed as atomic percentages, is less than or equal to 100, for example less than 20. This results in very significant reductions in the surface resistivity of the parts treated in this way, the appearance of antistatic properties or of electrostatic charge dissipation properties. By way of example, the ions X+ and X2+ are supplied by an ECR source.

Abstract: An improved plasma processing chamber is disclosed, wherein some or all of the components which are exposed to the plasma are made of, or coated with, titanium diborane. Titanium diborane has a hardness in excess of 9 mhos, making it less susceptible to sputtering. In addition, titanium diborane is resistant to fluoride and chlorine ions. Finally, titanium diborane is electrically conductive, and therefore the plasma remains more uniform over time, as charge does not build on the surfaces of the titanium diborane components. This results in improved workpiece processing, with less contaminants and greater uniformity. In other embodiments, titanium diborane may be used to line components within a beam line implanter.

Abstract: A method and system for forming a chalcogenide or chalcopyrite-based semiconductor material provide for the simultaneous deposition of metal precursor materials from a target and Se radials from a Se radical generation system. The Se radical generation system includes an evaporator that produces an Se vapor and a plasma chamber that uses a plasma to generate a flux of Se radicals. Multiple such deposition operations may take place in sequence, each having the deposition temperature accurately controlled. The deposited material may include a compositional concentration gradient or may be a composite material, and may be used as an absorber layer in a solar cell.

Abstract: A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or micro-electromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber.

Abstract: Method of incorporating atomic oxygen into a magnetic recording layer by sputtering a target containing an oxide of cobalt. The oxide of cobalt may be sputtered to provide a readily dissociable source of oxygen which may increase the concentration of free cobalt atoms (Co) in the magnetic recording layer and also increase oxide content in the magnetic recording layer.

Abstract: A plasma processing system for providing a uniform erosion of a surface of a target is provided. The system includes a dual plasma source arrangement, wherein each plasma source of the dual plasma source arrangement having a source housing for generating plasma therein. The system further includes a set of antennas, wherein at least one antenna is positioned outside of the source housing of each plasma source, at least one antenna is configured to be excited with RF power to generate the plasma inside the source housing of the each plasma source. The system yet also includes a magnet assembly configured for directing ions of the plasma within the source housing of the each plasma source through an opening of the source housing toward the surface of the target, wherein the target is positioned between a first plasma source of the dual plasma source arrangement and a second plasma source of the dual plasma source arrangement.

Abstract: A method of fabricating a light receiving element includes depositing a material for one of a P-type semiconductor, an N--type semiconductor, and electrodes, while applying a reverse bias voltage and irradiating light of a desired wavelength longer than an absorption wavelength of the material. The deposition has a non-adiabatic flow of, at a portion where a local shape to enable generation of near field light is formed on a surface of the deposited material with the irradiation light, absorbing the irradiation light through a non-adiabatic process with the near field light, thereby generating electrons, and canceling generation of a local electric field based on the voltage, and a particle adsorbing flow of, at a portion where the shape is not formed, causing the portion where the local electric field is generated to sequentially adsorb particles forming the material, and shifting to the non-adiabatic flow when the shape is formed.

Abstract: An ultracapacitor includes at least one electrode that includes carbon nanotubes. The carbon nanotubes may be applied in a variety of ways, and a plurality of layers may be included. Methods of fabrication of carbon nanotubes and ultracapacitors are provided.

Abstract: An IBAD apparatus includes, a target, a sputter ion source irradiating the target with sputter ions to sputter some of constituent particles of the target, a film formation region in which a base material for depositing thereon the particles sputtered from the target is disposed, and an assist ion beam irradiation device irradiating assist ion beams from a direction oblique to the direction of a normal of the film formation surface of the base material disposed in the film formation region, where the sputter ion source includes a plurality of ion guns arranged so as to be able to irradiate the target from an end portion on one side to an end portion on the other side with sputter ion beams, and current values for generating the sputter ion beams of the plurality of ion guns are set respectively.

Abstract: An interior antenna is provided for coupling RF energy to a plasma in a process chamber having a wall. The antenna comprises a coil having a face exposed to the plasma in the process chamber. A plurality of standoffs are provided to support the coil at a spacing from the wall of the process chamber. At least one standoff comprises a terminal thorough which an electrical power can be applied to the coil, the terminal comprising a conductor receptacle. A conductor cup is around the standoff having the terminal. The conductor cup comprises a sidewall having an inner diameter that is sufficiently large to maintain a sidewall gap between the sidewall and the terminal.

Abstract: A method and apparatus for forming a thermal barrier coating system in communication with at least a portion of at least one substrate. The method includes: depositing a first bond coat on at least a portion of at least one substrate; depositing a first thermal barrier coat disposed on the bond coat; whereby the deposition occurs in one or more chambers to form the thermal barrier coating system; and wherein the deposition of the first bond coat (or subsequent bond coats) and the deposition of the first thermal barrier coat (or subsequent thermal barrier coats) is performed without out-of chamber handling of the thermal barrier coating system.

Abstract: One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and a magnet outside the conductive hollow cylinder capable of affecting the current density on the conductive hollow cylinder.

Abstract: Non-elliptical ion beams and plumes of sputtered material can yield a relatively uniform wear pattern on a destination target and a uniform deposition of sputtered material on a substrate assembly. The non-elliptical ion beams and plumes of sputtered material impinge on rotating destination targets and substrate assemblies. A first example ion beam grid and a second example ion beam grid each have patterns of holes with an offset between corresponding holes. The quantity and direction of offset determines the quantity and direction of steering individual beamlets passing through corresponding holes in the first and second ion beam grids. The beamlet steering as a whole creates a non-elliptical current density distribution within a cross-section of an ion beam and generates a sputtered material plume that deposits a uniform distribution of sputtered material onto a rotating substrate assembly.

Abstract: An ion beam system includes a grid assembly having a substantially elliptical pattern of holes to steer an ion beam comprising a plurality of beamlets to generate an ion beam, wherein the ion current density profile of a cross-section of the ion beam is non-elliptical. The ion current density profile may have a single peak that is symmetric as to one of the two orthogonal axes of the cross-section of the ion beam. Alternatively, the single peak may be asymmetric as to the other of the two orthogonal axes of the cross-section of the ion beam. In another implementation, the ion current density profile may have two peaks on opposite sides of one of two orthogonal axes of the cross-section. Directing the ion beam on a rotating destination work-piece generates a substantially uniform rotationally integrated average ion current density at each point equidistant from the center of the destination work-piece.

Abstract: Sputtering is performed using a sputtering system having a sputtering source having a sputtering medium, a sputtering target positioned so as to be impinged upon by the sputtering medium of the sputtering source, wherein the sputtering target comprises a mass of a first loose granular material, and an open-top vessel in which the mass of the first loose granular material of the sputtering target is received and positioned so that the first loose granular material does not fall out of the open-top vessel by gravity. Some of the first loose granular material is sputtered from the sputtering target, a quantity of a second loose granular material is added to the mass of the first loose granular material in the open-top vessel, and thereafter some of the second loose granular material is sputtered from the sputtering target.

Abstract: Because an electromagnetic chuck supplies current to a specific microcoil among a plurality of microcoils and makes an object exert an electromagnetic force working together with a magnet of the object, the object can be held in a state where the object is set at a desired position (a position that corresponds to the microcoil to which current has been supplied) on a base surface. Further, by gas that blows out from a gas supply passage, a levitation force is given to the object, which can reduce effects of a friction force that acts between the object and an upper surface of the electromagnetic chuck when the position of the object is set.

Abstract: Disclosed is a method for the low cost manufacturing a plurality of rigid sputtered magnetic media disks of one or more sizes from a rigid sheet, in which one or more initial steps of preparing the media are performed while the media is in sheet form. The individual disks are then removed from the sheet, and final processing is performed individually on the disks.

Abstract: An ion source is provided. The ion source comprises a first cylindrical anode and a second cylindrical anode. The first cylindrical anode is concentric with the second cylindrical anode. The ion source further comprises an electron source positioned within the first cylindrical anode or the second cylindrical anode.

Abstract: A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided.

Abstract: A sputter deposition system comprises a vacuum chamber including a vacuum pump for maintaining a vacuum in the vacuum chamber, a gas inlet for supplying process gases to the vacuum chamber, a sputter target and a substrate holder within the vacuum chamber, and a plasma source attached to the vacuum chamber and positioned remotely from the sputter target, the plasma source being configured to form a high density plasma beam extending into the vacuum chamber. The plasma source may include a rectangular cross-section source chamber, an electromagnet, and a radio frequency coil, wherein the rectangular cross-section source chamber and the radio frequency coil are configured to give the high density plasma beam an elongated ovate cross-section. Furthermore, the surface of the sputter target may be configured in a non-planar form to provide uniform plasma energy deposition into the target and/or uniform sputter deposition at the surface of a substrate on the substrate holder.

Abstract: The present invention relates to a protective enclosure for an ion gun and to a device for depositing materials through vacuum evaporation comprising such an enclosure and methods of using each. According to the invention, the protective enclosure comprises a side wall intended to surround said ion gun, and an open upper end, said protective enclosure having a longitudinal axis, a truncated tube shape on its open upper end resulting from an inclined surface relative to said longitudinal axis, and having a lower part and an upper part.

Abstract: A solar cell module layer stack is described. The layer stack includes a doped silicon wafer substrate, a further layer of the substrate or deposited on the substrate, wherein the further layer is doped for generation of a p-n-junction with the doped silicon wafer substrate; and a first sputtered passivation layer deposited on the doped silicon wafer substrate or the further layer, wherein the passivation layer is selected from the group consisting of: an aluminum-containing oxide layer, an aluminum-containing oxynitride layer, and mixtures thereof; and wherein the passivation layer being plasma treated under a hydrogen-containing atmosphere and/or wherein the layer stack further comprises a hydrogen-containing cap layer on the passivation layer.