Abstract: A high current density, low voltage ion source includes a vacuum chamber. A plasma source induces generation of a plasma within the chamber, or injects a plasma directly into the chamber. A magnetic and electric field cooperate to guide the ions from the plasma region in a beam towards a substrate to be processed by the ions. A method of use of the ion source includes production of an ion beam for processing of a substrate.

Abstract: Ion texturing methods and articles are disclosed.

Abstract: A method of making a nickel iron (NiFe) layer and a cobalt or cobalt based layer of a free layer structure forms the cobalt or cobalt based layer by oblique ion beam sputter deposition with the cobalt or cobalt based layer located between the nickel iron (NiFe) layer and a copper (Cu) spacer layer of a spin valve sensor for reducing hard axis coercivity HCH which increases sensitivity and magnetic stability of a magnetic read head. An alpha iron oxide (&agr;FeO) layer on a nickel oxide (NiO) layer of a pinning layer may also be obliquely ion beam sputtered for improving magnetic stability of the read head.

Abstract: An ion beam deposition system for sputtering material layers comprising a vacuum chamber, a substrate positioned in the vacuum chamber, a first target holder capable of holding at least one target of a first material, said first target holder being positioned in the vacuum chamber, a second target holder capable of holding at least one target of a second material, said second target holder being positioned in the vacuum chamber, a first ion beam source for directing ions at the at least one target of the first material for depositing said first material onto the substrate, and a second ion beam source for directing ions at the at least one target of the second material for depositing said second material onto the substrate. Said deposition system includes a control system that allows materials to be deposited from the first and second target holder with negligible delay between the depositions.

Abstract: The invention relates to a photo mask blank, a photo mask, a method and an apparatus for manufacturing of a photo mask blank in general and for manufacturing of a photo mask blank by particle beam sputtering in particular.

Abstract: A method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods. The apparatus includes silicon substrate as the silicon source, and metal foils are used as catalyst. Methods of surface modification of the as-synthesized silicon cones for field emission application have also been developed, including hydrofluoric acid etching, annealing and low work-function metal coating. Nano-structure modification based on silicon cones takes advantage of the fact that the cone tip consists of metal/metal siliside, which can be used as catalyst and template for nanowires growth. A method and an apparatus have been developed to grow silicon oxide/silicon nanowires on tips of the silicon cones.

Abstract: An ion beam deposition target source consisting of a removable, centrally located inner insert surrounded by an outer region. The insert can be removed and replaced when eroded, while the outer region of the target source not eroded by the ion beam remains in place attached to a backing plate. The inner insert and the outer region are joined to each other by an interface comprising an interlocking lip or grove structure located on opposing mating surfaces on the inner insert and outer region, thereby forming the deposition target source when these components are united. The deposition target source can be attached by a bonding layer to a backing plate which is installed into an ion beam deposition machine.

Abstract: An ion beam deposition system for sputtering material layers comprising a vacuum chamber, a substrate positioned in the vacuum chamber, a first target holder capable of holding at least one target of a first material, said first target holder being positioned in the vacuum chamber, a second target holder capable of holding at least one target of a second material, said second target holder being positioned in the vacuum chamber, a first ion beam source for directing ions at the at least one target of the first material for depositing said first material onto the substrate, and a second ion beam source for directing ions at the at least one target of the second material for depositing said second material onto the substrate. Said deposition system includes a control system that allows materials to be deposited from the first and second target holder with negligible delay between the depositions.

Abstract: [Problem] To provide a film forming apparatus being capable of forming films sequentially with two types of film forming mechanisms in the same chamber.

Abstract: An ion beam sputtering apparatus comprising: a first means for generating an ion beam and directing said ion beam in a prescribed direction, a second means for supporting a target at a position where said target is capable of exposing said ion beam irradiated in said prescribed direction and of being sputtered by said ion beam, a third means for supporting an electrically conductive substrate having a semiconductor layer on which a component sputtered from said target is to be deposited, and a fourth means for making said electrically conductive substrate have a non-earth potential. A method for forming a transparent and electrically conductive film on an electrically conductive substrate having a semiconductor layer, which is based on said ion beam sputtering apparatus. A process for producing a semiconductor device by forming a transparent and electrically conductive film on a semiconductor layer for said semiconductor device, which is based on said ion beam sputtering apparatus.

Abstract: First of all, a substrate applied in the lithography process is provided, and then a high transmission attenuate layer (HTAL) is formed on the substrate. Then an opaque layer is formed on the high transmission attenuate layer (HTAL), and then an ion-implanting process is performed in the high transmission attenuate layer (HTAL). Afterward, the opaque layer is etched to define a first phase region and a second phase region on the high transmission attenuate layer (HTAL). Subsequently, a photoresist layer is formed on the second phase region and the opaque layer to expose a partial surface of the high transmission attenuate layer (HTAL) that is located the first phase region. Then the partial surface of the high transmission attenuate layer (HTAL) that is located on the first phase region is etched through until a predetermined depth in the substrate.

Abstract: A deposition system includes a substrate holder supporting a substrate defining at least one topographical feature. In addition, the system includes a deposition plume that is directed toward the substrate. A first profiler mask is positioned between the deposition plume and the substrate, and is shaped so as to reduce inboard/outboard asymmetry in a deposition profile associated with the feature.

Abstract: A method and means are provided for actively protecting a substrate from particulate contamination during thin film deposition. An intense beam of ions or ionized clusters is directed through the space immediately in front of the surface being coated, and the kinetic energy of the ions is used to deflect any approaching particle defects to the side, preventing them from reaching the surface being coated.

Abstract: Disclosed is a processing method for forming a thick film having an improved adhesion to a surface-modified substrate and an apparatus thereof enabling to form a thick film having the improved adhesion to a polymeric surface by modifying the polymeric surface to have a hydrophilic property. The method includes the steps of preparing a substrate of a polymer material, surface-modifying the substrate, forming a seed layer on the substrate, and forming the thick film on the seed layer. The apparatus includes an unloading area supplying a substrate of a polymer material, a surface treating area modifying a surface of the substrate, a seed layer formation area forming a seed layer on the surface-modified substrate, a thick film formation area forming a thick film on the seed layer, and a loading area loading the substrate.

Abstract: The present invention discloses an apparatus and a method of forming a thin film from negatively charged sputtered ions. More specifically, a sputter deposition apparatus for forming a thin film on a substrate includes at least one sputter target comprised of a material for the thin film, an ion gun emitting a neutralized ion beam towards the sputter target, a sputter gas source supplying a sputter gas into the ion gun, and a cesium vapor emitter inducing a plurality of negatively ionized sputtered particles from the sputter target and located in close proximity to the sputter target to introduce cesium vapor onto a reaction surface, wherein the cesium vapor emitter includes a feeding manifold having a plurality of apertures therein, a reservoir coupled to the feeding manifold and filled with a cesium slurry, and an on/off valve controlling an amount of the cesium vapor from the reservoir.

Abstract: An ion source includes an anode and/or cathode which is/are coated with a conductive coating. The coating has a sputtering yield less than that of an uncoated anode and/or cathode, so that erosion of the resulting anode and/or cathode in the source is reduced during source operation. Example coating materials for the anode and/or cathode of the ion beam source include metal borides including but not limited to TiB2 and ZrB2.

Abstract: In accordance with one specific embodiment of the present invention, the apparatus for sputter deposition within an evacuated volume comprises a compact ion source to generate ions into which an ionizable gas is introduced and from which ions leave with directed energies near or below the sputtering threshold, a sputter target near that source and located within the beam of ions leaving that source, a sputter target with a grounded shield that defines the target portion exposed to sputtering, and a power supply to bias the target negative relative to ground so that ions are attracted to and sputter the target. Particles sputtered from the target are deposited on a deposition substrate separate from both the ion source and the sputter target. For an insulating target, the target is biased with a radiofrequency power supply and the bias has a mean negative value rather than a direct-current negative value relative to ground.

Abstract: A PVD method and a PVD apparatus use a rotating magnetic field in order to increase the yield. The magnetic field is provided such that it essentially vanishes, at least in a time average, outside a rotation axis of the magnetic field in sectors of the target region of the PVD apparatus. In this manner the PVD method and the PVD apparatus achieve a uniform coating.

Abstract: A sputtering system is provided with a substrate and a sputtering material layer that are located in a sputtering chamber. The sputtering material layer has a sputtering surface where atoms of the material are sputtered and the substrate has a forming surface with a site where atoms of the sputtered material are to be formed. The sputtering material layer has a sputtering center which is located at a center of the atoms to be sputtered and the aforementioned site has a periphery with a forming center at a center of the periphery. The sputtering center is offset from the forming center so that shadowing at outer extremities of photoresist masks near the periphery of the substrate is minimized.

Abstract: A deposition system is described. The deposition system includes a deposition source that generates deposition flux comprising neutral atoms and molecules. A shield defining an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux through the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned adjacent to the shield. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion.

Abstract: An ion source for use in ion assisted deposition of films, has an ionization region, a gas supply supplying ionizable gas to the ionization region, a gas excitation system causing ionization of the gas, ion influencing means forming the ions into a current directed at a target, and an ion source controller controlling the ion source so as to intermittently produce the ion current.

Abstract: Apparatus (10) for treating a substrate, comprising: a vacuum chamber (12); a substrate carrier (14) adapted to carry a substrate (16) to be treated; a source material holder (22) for holding a source material (34) with which the substrate (16) is to be treated; and vaporising or sputtering means (20) for vaporising/sputtering the source material (34); wherein the source material holder (22) includes a positioning means (24) for relatively moving the source material (34) towards the substrate carrier (14).

Abstract: The particle implantation apparatus comprises a target, an ion beam source, a target scanning mechanism, a slit plate, a holder, and a holder scanning mechanism. The target is used for sputtering. The ion beam source applies an ion beam apparently like a sheet wider in the X direction onto the target so as to generate sputter particles. The target scanning mechanism mechanically scans the target in the Y direction crossing the X direction in reciprocating manner at a fixed angle with respect to the ion beam. The slit plate is used for passing sputter particles generated from the target and has a long slit extending in the X direction. The holder holds a substrate at the position where sputter particles having passed through the slit are incident. The holder scanning mechanism mechanically scans the holder in the Z direction crossing both the X and Y directions in reciprocating manner.

Abstract: A method and apparatus is disclosed that provided for the successful and precise smoothing of conductive films on insulating films or substrates. The smoothing technique provides a smooth surface that is substantially free of scratches. By supplying a source of electrons, harmful charging of the films and damage to the films are avoided.

Abstract: Before submitting a sample, including a first material layered upon a substrate, to an ion milling process, whereby a second material is sputtered onto the surface of the first material and the sample is then submitted to an etching process, an irregularity is formed on the surface of the first material. The overall process results in the formation of cones, or micro-tip structures, which may then be layered with a layer of low work function material, such as amorphous diamond. The irregularity in the surface of the first material may be formed by polishing, sandblasting, photolithography, or mechanical means such as scratching.

Abstract: A system and method for controlling a deposition thickness distribution over a substrate. A motor rotates the substrate, and at least one sensor senses the deposition thickness of the substrate at two or more radii on the substrate. An actuator varies a shadow of a mask disposed over a target used to sputter material on the substrate. An ion source generates an ion beam that is directed toward the target. The mask is positioned between the ion source and the target, and selectively blocks ion current from the ion source from reaching the target. A process controller is coupled to the deposition thickness sensor and the actuator. In response to the sensed deposition thickness, the process controller varies the shadow of the mask with respect to the target to control the deposition thickness distribution over the substrate.

Abstract: Methods and systems are provided for depositing a magnetic film using one or more long throw magnetrons, and in some embodiments, an ion assist source and/or ion beam source. The long throw magnetrons are used to deposit particles at low energy and low pressure, which can be useful when, for example, depositing interfacial layers or the like. An ion assist source can be added to increase the energy of the particles provided by the long throw magnetrons, and/or modify or clean the layers on the surface of the substrate. An ion beam source can also be added to deposit layers at a higher energies and lower pressures to, for example, provide layers with increased crystallinity. By using a long throw magnetron, an ion assist source and/or an ion beam source, magnetic films can be advantageously provided.

Abstract: A method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods. The apparatus includes silicon substrate as the silicon source, and metal foils are used as catalyst. Methods of surface modification of the as-synthesized silicon cones for field emission application have also been developed, including hydrofluoric acid etching, annealing and low work-function metal coating. Nano-structure modification based on silicon cones takes advantage of the fact that the cone tip consists of metal/metal siliside, which can be used as catalyst and template for nanowires growth. A method and an apparatus have been developed to grow silicon oxide/silicon nanowires on tips of the silicon cones.

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles.

Abstract: A method for producing film thickness control of ion beam sputter deposition films. Great improvements in film thickness control is accomplished by keeping the total current supplied to both the beam and suppressor grids of a radio frequency (RF) in beam source constant, rather than just the current supplied to the beam grid. By controlling both currents, using this method, deposition rates are more stable, and this allows the deposition of layers with extremely well controlled thicknesses to about 0.1%. The method is carried out by calculating deposition rates based on the total of the suppressor and beam currents and maintaining the total current constant by adjusting RF power which gives more consistent values.

Abstract: A vacuum chamber deposits thin films on a substrate by sputtering a target. The beam of atoms or ions from the target is partially blocked by a shadow or adjustable uniformity mask, reducing the deposition rate onto the substrate. The adjustable uniformity mask has several adjustable fingers. The fingers extend or retract to enlarge or reduce the size of the mask. Each finger covers a different annular region or radius of the substrate. The deposition rate at different substrate radii is thus adjustable by the fingers. Several optical beams monitor the film transmittance at different substrate radii. A transmittance profile is continually generated during deposition. As deposition proceeds, radii with a thicker film have their fingers extended to reduce their deposition rate, producing a more uniform film thickness across all radii. Motors extend or retract the individual fingers.

Abstract: The present invention provides apparatus and methods to carry out the task of both reducing the surface roughness (smoothing) and improving the thickness uniformity of, preferably, but not limited thereto, the top silicon film of a silicon-on-insulator (SOI) wafer or similar thin-film electronic and photonic materials (workpiece). It also provides a method and apparatus for smoothing the surface of a (preferably) SOI wafer (workpiece) and for making the surface of the silicon film of a (preferably) SOI wafer cleaner and more free from contaminants.

Abstract: This invention provides a new DWDM filter deposition system, which uses quarter wavelength antenna and electron cyclotron resonance magnets to enhance the plasma density to improve the quality of DWDM filter.

Abstract: This invention provides a new AWG deposition system to fabricate a multilayers AWG. In order to manufacture high quality films and reduce the pollution of chemicals, super high density plasma technology is applied to this system because the traditional processes such as MOCVD, PECVD, etc. use toxic chemicals to produce pollution and cause environment problem. The new design also provides a flexible ion sources, targets, power supplies, and mass flow rate controllers which numbers depend on the requirements of the system.

Abstract: A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequency AC power supply, while the lower electrode 28 is powered by a low frequency AC power supply, as well as a DC power supply. The reactor chamber 22 is configured with a solid source 50 of gaseous species and a protruding baffle 40. A nozzle 36 provides a jet stream of process gases in order to ensure uniformity of the process gases at the surface of a semiconductor wafer 48. The configuration of the plasma etch reactor 20 enhances the range of densities for the plasma in the reactor 20, which range can be selected by adjusting more of the power supplies 30, 32.

Abstract: Methods and systems are provided for depositing a magnetic film using one or more long throw magnetrons, and in some embodiments, an ion assist source and/or ion beam source. The long throw magnetrons are used to deposit particles at low energy and low pressure, which can be useful when, for example, depositing interfacial layers or the like. An ion assist source can be added to increase the energy of the particles provided by the long throw magnetrons, and/or modify or clean the layers on the surface of the substrate. An ion beam source can also be added to deposit layers at a higher energies and lower pressures to, for example, provide layers with increased crystallinity. By using a long throw magnetron, an ion assist source and/or an ion beam source, magnetic films can be advantageously provided.

Abstract: A differentially pumped deposition system is described that includes a deposition source, such as a magnetron sputtering source, that is positioned in a first chamber. The deposition source generates deposition flux comprising neutral atoms and molecules. A shield that defines an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux though the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned in the second chamber adjacent to the shield. The pressure in the second chamber is lower than a pressure in the first chamber. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion, thereby improving uniformity of the deposited thin fill.

Abstract: A method is presented for making a polycrystalline thin film (B) by depositing particles emitted from a target (36) on a substrate base (A) to form the film (B) constituted by the target material while concurrently irradiating the depositing particles with an ion beam generated by an ion source (39) at an angle of incidence, in a range of 50 to 60 degrees to a normal (H) to a film surface, and maintaining a film temperature at less than 300 degrees Celsius. This method is effective in producing an excellent alignment of crystal axes of the grains in the film when the film thickness exceeds 200 nm. The target material includes yttrium-stabilized zirconia but other material can also be used. A layer (C) of a superconducting substance formed on top of the polycrystalline thin film (B) produces a superconducting film (22) exhibiting excellent superconducting properties.

Abstract: A sputtering system for the depositing or etching of insulating, conducting, or semiconducting thin films is disclosed, in which the sputtering plasma is irradiated with a transverse, adjustable ultraviolet emission produced by an ultraviolet optical cavity containing a lamp discharge. The cavity irradiates the sputtering plasma volume with a sufficiently high optical flux to enact significant changes in the film produced. This effect is enabled by the device geometry, which, in the preferred embodiment, provides uniquely high efficiency and stability in the optical coupling between the lamp discharge and the sputtering plasma, resulting in the ability to significantly alter ionized and excited state populations within or above the sputtering plasma. The design also allows the operator to significantly control the volume and species involved in the optical interaction. A novel ultraviolet source for materials processing is also disclosed.

Abstract: A method of producing a multilayer structure that has reduced interfacial roughness and interlayer mixing by using a physical-vapor deposition apparatus. In general the method includes forming a bottom layer having a first material wherein a first plurality of monolayers of the first material is deposited on an underlayer using a low incident adatom energy. Next, a second plurality of monolayers of the first material is deposited on top of the first plurality of monolayers of the first material using a high incident adatom energy. Thereafter, the method further includes forming a second layer having a second material wherein a first plurality of monolayers of the second material is deposited on the second plurality of monolayers of the first material using a low incident adatom energy. Next, a second plurality of monolayers of the second material is deposited on the first plurality of monolayers of the second material using a high incident adatom energy.

Abstract: A vacuum chamber deposits thin films on a substrate by sputtering a target. The beam of atoms or ions from the target is partially blocked by a shadow or adjustable uniformity mask, reducing the deposition rate onto the substrate. The adjustable uniformity mask has several adjustable fingers. The fingers extend or retract to enlarge or reduce the size of the mask. Each finger covers a different annular region or radius of the substrate. The deposition rate at different substrate radii is thus adjustable by the fingers. Several optical beams monitor the film transmittance at different substrate radii. A transmittance profile is continually generated during deposition. As deposition proceeds, radii with a thicker film have their fingers extended to reduce their deposition rate, producing a more uniform film thickness across all radii. Motors extend or retract the individual fingers.

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles.

Abstract: A system and method for controlling a deposition thickness distribution over a substrate. A motor rotates the substrate, and at least one sensor senses the deposition thickness of the substrate at two or more radii on the substrate. An actuator varies a shadow of a mask disposed over a target used to sputter material on the substrate. An ion source generates an ion beam that is directed toward the target. The mask is positioned between the ion source and the target, and selectively blocks ion current from the ion source from reaching the target. A process controller is coupled to the deposition thickness sensor and the actuator. In response to the sensed deposition thickness, the process controller varies the shadow of the mask with respect to the target to control the deposition thickness distribution over the substrate.

Abstract: A system for performing sputter disposition on a substrate. A divergent ion current source generates a divergent ion beam. The ion current source has a central axis about which ions are directed toward a surface of a negatively biased target. A rotating substrate is positioned proximate to the target. The central axis of the ion current source is normal to the surface of the target and parallel to a deposition surface of the rotating substrate.

Abstract: A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate.

Abstract: A Raman spectrum of a thin film which must be formed is measured in a thin-film forming step for forming the thin film on a member to be processed in an atmosphere, the pressure of which has been reduced. Moreover, the conditions under which the thin film is formed are controlled in accordance with a result of measurement of the Raman spectrum. At this time, the measurement of the Raman spectrum is continuously performed in an in-line manner while the thin film is being continuously formed on the elongated-sheet-like member to be processed. The measurement of the Raman spectrum is performed while the focal point of a probe of a Raman spectrometer is being controlled with respect to the member to be processed or while the output of a laser beam from the Raman spectrometer is being controlled. The thin film which must be. formed is, for example, a protective film of a magnetic recording medium. The protective film is, for example, a hard carbon film (a DLC film).

Abstract: A simple, relatively inexpensive, yet effective PLD method is provided for forming extremely clean films with reduced particulate densities and size. A PLD system is used for producing the thin films and includes a PLD chamber wherein a laser beam ablates a target material creating an ionized plasma plume of ions and electrons which is diverted and deposited onto a substrate using a confinement magnet and a deflection magnet. Each of the confinement magnet and the deflection magnet generates an axial magnetic field which is generally parallel to the laser beam plume ejection direction. The charged constituents of the plume are influenced by the magnetic fields and are thus deflected to the substrate, while the larger atomic clusters and particulates are advantageously not deflected. An electric field can also be used to aid in the deflection of the charged plume species. The electric field can be separately modulated to control the film deposition onto the substrate.

Abstract: A merged ion beam and plasma vapor deposition chamber and associated manufacturing process are disclosed in which thin film depositions occur in a merged deposition chamber. The chamber utilizes both ion beam and RF/DC magnetron sputtering in a single chamber. The deposition of the layers can occur in the chamber without substrate transfer in a low vacuum, eliminating the need for multiple chambers and associated timely wafer transfer steps. The result is a film deposition and growth process which utilizes the advantages unique to each of the RF/DC and IBD processes without the film degradation that occurs in robot wafer transfer chambers found in combination systems known in the art.

Abstract: A system and method for performing sputter deposition on a substrate include ion and electron sources that generate ion and electron currents directed at a target. Biasing circuitry biases the target with an a-symmetric bi-polar DC voltage pulse signal. The biasing circuitry is formed from positive and negative voltage sources and a high frequency switch. A current sensor, coupled to the biasing circuitry, monitors positive and negative currents from the target. A control system, coupled to the current sensor, varies the ion and electron currents independently. The ion and electron sources create a continuos plasma that is proximate the target. Ions attracted from the plasma sputter the target, and material from the target is deposited on the substrate. Electrons attracted from the plasma neutralize accumulated charge on the target.

Abstract: A system and method for simultaneously performing sputter deposition on a plurality of planar substrates. An ion current source generates an ion beam in which ions are directed toward a target. The target is formed from a section of a sphere. Each of the plurality of planar substrates has a deposition surface that is tangent to a surface of the sphere. In addition, a substrate that is a section of a sphere may be used. The deposition thickness across the spherically-shaped substrate is uniform.