Abstract: A deposition apparatus is configured to form a deposition layer on a substrate. The deposition apparatus includes a deposition source configured to face a first side of the substrate and to spray one or more depositing materials toward the substrate, a cooling stage configured to support a second side of the substrate that is opposite from the first side of the substrate, and a hardening unit configured to harden the one or more depositing materials sprayed from the deposition source and that have reached the substrate. A method of forming a thin film deposition layer on a substrate by using a deposition apparatus is also provided. The method includes spraying one or more depositing materials toward the substrate by using a deposition source of the deposition apparatus while the substrate is on a cooling stage of the deposition apparatus.

Abstract: A system for coating a sheet of glass is disclosed. The system includes a first coating chamber, a second coating chamber, an intermediary chamber and three conveying units. The intermediary chamber is sandwiched between the first and second chambers and has a gap plate and an elevator connected to the gap plate. The three conveying units are separately disposed in lower portions of the first costing chamber, the second coating chamber and the intermediary chamber for conveying a sheet of glass to be coated. The gap plate is located above one of the conveying units, and the elevator is capable of adjusting a distance between the gap plate and the conveying unit.

Abstract: An alignment film forming apparatus and a method are provided to form an alignment film for a liquid crystal in a single process of simultaneously executing a film deposition process of ion beam sputtering and an alignment process. The method greatly restricts the size of a substrate. An alignment film forming apparatus includes a target disposed on a top surface side of a substrate and having a sputtering surface defining a sharp angle to the top surface of the substrate, a transfer table that transfers the substrate in a predetermined direction, and an ion source disposed on the top surface side of the substrate in such a way that an ion beam is irradiated on the sputtering surface of the target. An ion beam reflected at the sputtering surface is irradiated on a sputtering film formed on the substrate.

Abstract: An IBAD apparatus includes, a target, a sputter ion source irradiating the target with sputter ions to sputter some of constituent particles of the target, a film formation region in which a base material for depositing thereon the particles sputtered from the target is disposed, and an assist ion beam irradiation device irradiating assist ion beams from a direction oblique to the direction of a normal of the film formation surface of the base material disposed in the film formation region, where the sputter ion source includes a plurality of ion guns arranged so as to be able to irradiate the target from an end portion on one side to an end portion on the other side with sputter ion beams, and current values for generating the sputter ion beams of the plurality of ion guns are set respectively.

Abstract: The plant is suitable to produce a semiconductor film (8) having a desired thickness and consisting substantially of a compound including at least one element for each of the groups 11, 13, and 16 of the periodic classification of elements. The plant comprises an outer case (1) embedding a chamber (2) divided into one deposition zone (2a) and one evaporation zone (2b), which are separated by a screen (3) interrupted by at least one cylindrical transfer member provided with actuation means rotating about its axis (5). To the deposition zone (2a) a magnetron device (7) is associated, for the deposition by sputtering of at least one element for each of the groups 11 and 13 on the side surface (?) of the cylindrical member that is in the deposition zone (2a). To the evaporation zone (2b) a cell (10) for the evaporation of at least one element of the group 16 is associated, and such an evaporation zone (2b) houses a substrate (8a) on which the film (8) is produced.

Abstract: In a sputtering device of the present invention, a long film is guided by a plurality of concave guide rolls. Pressure imposed on the long film from the plurality of concave guide rolls is strong as near as an end and is weak as near as the center. Accordingly, the long film is substantially supported in an end portion of each of the concave guide rolls. Since wrinkles generated on the long film are not subjected to strong pressure from the concave guide rolls when passing through the concave guide rolls, these wrinkles do not turn to folds and pass through as they are.

Abstract: A sputtering device includes: a vacuum chamber; a vacuum pump for evacuating the vacuum chamber; a supply roll for supplying a long film; a storage roll for storing the long film; a film depositing roll that is provided in the vacuum chamber and conveys the long film along a surface thereof; a target facing the film depositing roll; a gas pipe for supplying a gas into the vacuum chamber; a plurality of guide rolls for guiding the long film; a plurality of guide roll shafts provided at each of both ends of the plurality of guide rolls; a plurality of bearings for supporting the guide roll shafts; and a plurality of insulators configured to insulate the guide roll shafts and the bearings from each other, wherein contact surfaces of the guide rolls with the long film are kept at a floating potential.

Abstract: The invention provides a coater, and methods of using the coater, for depositing thin films onto generally-opposed major surfaces of a sheet-like substrate. The coater has a substrate transport system adapted for supporting the substrate in a vertical-offset configuration wherein the substrate is not in a perfectly vertical position but rather is offset from vertical by an acute angle. The transport system defines a path of substrate travel extending through the coater. The transport system is adapted for conveying the substrate along the path of substrate travel. Preferably, the transport system includes a side support for supporting a rear major surface of the substrate. The preferred side support bounds at least one passage through which coating material passes when such coating material is deposited onto the substrate's rear major surface. Preferably, the coater includes at least one coating apparatus (e.g.

Abstract: Provided is a continuous deposition apparatus wherein replacement operations of a feeding unit and a take-up unit are easily performed. The continuous deposition apparatus is provided with: a vacuum chamber (1); a deposition roller (2); evaporation sources (7L1, 7L2, 7R) which supply a deposition material to a film substrate from the side of the film substrate which is wound on the deposition roller and on which a coating is to be deposited; a feeding unit (3) which supplies the film substrate to the deposition roller (2); and a take-up unit (4) which takes up the film substrate after the coating is deposited thereon.

Abstract: An apparatus and a process is disclosed for applying a boron coating to a thin foil. Preferably, the process is a continuous, in-line process for applying a coating to a thin foil comprising wrapping the foil around a rotating and translating mandrel, cleaning the foil with glow discharge in an etching chamber as the mandrel with the foil moves through the chamber, sputtering the foil with boron carbide in a sputtering chamber as the mandrel moves through the sputtering chamber, and unwinding the foil off the mandrel after it has been coated. The apparatus for applying a coating to a thin foil comprises an elongated mandrel. Foil preferably passes from a reel to the mandrel by passing through a seal near the initial portion of an etching chamber. The mandrel has a translation drive system for moving the mandrel forward and a rotational drive system for rotating mandrel as it moves forward. The etching chamber utilizes glow discharge on a surface of the foil as the mandrel moves through said etching chamber.

Abstract: An arrangement of elongated nanowires that include titanium silicide or tungsten silicide may be grown on the exterior surfaces of many individual electrically conductive microfibers of much larger diameter. Each of the nanowires is structurally defined by an elongated, centralized titanium silicide or tungsten silicide nanocore that terminates in a distally spaced gold particle and which is co-axially surrounded by a removable amorphous nanoshell. A gold-directed catalytic growth mechanism initiated during a low pressure chemical vapor deposition process is used to grow the nanowires uniformly along the entire length and circumference of the electrically conductive microfibers where growth is intended. The titanium silicide- or tungsten silicide-based nanowires can be used in a variety electrical, electrochemical, and semiconductor applications.

Abstract: The present invention refers to a coating device for depositing of barrier layers on a plastic substrate comprising a first coating station for depositing a first layer comprising a metal and a second coating station for depositing a second layer comprising a resin, wherein a treatment station for treating the deposited first layer is arranged between the first and the second coating stations which comprises sputter means for depositing one or several atomic layers or isles of deposition material. The invention further refers to an appropriate method which can be carried out by the coating device and to a layer system produced thereby.

Abstract: The plasma CVD apparatus of the present invention comprises a pair of deposition rolls 2 and 3 disposed oppositely in parallel so that a substrate S wound thereon faces each other; a magnetic field generating member 12 and 13 provided inside each of the deposition rolls 2 and 3, which generates a magnetic field so as to converge plasma to the vicinity of a roll surface thereof facing a space 5 between the deposition rolls; a plasma power source 14 with polarity alternately reversing between one electrode and the other electrode; a gas supply pipe 8 for supplying a film-forming gas to the space 5; and evacuation means for evacuating the space. One electrode of the plasma power source 14 is connected to one deposition roll 2, and the other electrode thereof to the other deposition roll 3.

Abstract: Described are an apparatus and a method for cooling a web. The apparatus includes an inner cylinder having a void therein and configured for coupling to a gas source. The apparatus also includes an outer cylinder having an inner surface, an outer surface to support a web and apertures between the inner and outer surfaces. The outer cylinder rotates about the inner cylinder so that gas provided to the void of the inner cylinder flows through the apertures that are adjacent to the void and passes to the outer surface of the outer cylinder to increase the heat transfer between the web and the outer cylinder. The volume of gas introduced into the vacuum deposition chamber during a process run is thereby limited. Advantageously, the apparatus enables higher deposition rates and increased productivity.

Abstract: The conveying unit conveys a long sheet-like subject in its longitudinal direction. The conveying unit includes a stepped roller which has large-diameter portions spaced apart from each other in a direction perpendicular to a direction of conveyance of the sheet-like subject and having a larger diameter than a remainder of the stepped roller being a small-diameter portion of the stepped roller, the large-diameter portions supporting and conveying the sheet-like subject, a closed space forming subunit between the small-diameter portion of the stepped roller and the sheet-like subject and a gas supply subunit for supplying a gas to the closed space. The vacuum deposition device forms a film on a surface of a long substrate by vacuum deposition. The vacuum deposition device includes a vacuum chamber, a conveying device which includes the conveying unit and a film forming unit.

Abstract: A method and an apparatus for producing a steel wire for reinforcing an elastomeric material. The steel wire has a metal core and a coating layer made of a metal alloy material having a composition including at least one first metal component and at least one second metal component. The method includes the steps of: a) conveying the steel core along a predetermined path in a substantially continuous manner; b) co-sputtering at least one first powered cathode made of said first metal component and at least one second powered cathode made of said second metal component onto the steel core being moved along the predetermined path to obtain a coating layer made of a metal alloy material of a first composition; and c) adjusting the power provided to at least one of the first and second cathodes to obtain a coating layer made of a metal alloy material of a second composition.

Abstract: Disclosed is a method for the low cost manufacturing a plurality of rigid sputtered magnetic media disks of one or more sizes from a rigid sheet, in which one or more initial steps of preparing the media are performed while the media is in sheet form. The individual disks are then removed from the sheet, and final processing is performed individually on the disks.

Abstract: An improved metal coated textile and its production method where the coating of metal is deposited onto the textile through sputtering process in thickness between 20 to 2000 angstroms, with less than 5% variance in thickness across the entire length and width of the textile with width up to and over 10000 mm and length up to and over 1000 meters. The improved sputtering process utilizes longer cathodes, arrangements of metal target(s), tension controller with tension meter(s), guard(s), cylinder cover(s), and control over the textile while traveling through the chamber. The metal layer deposited is highly adhesive to the textile and is suitable for producing clothing, swim wear, diving suit, tent, cushion, wall paper, curtain, carpet, protective cover, screen window, equipment casing, and various other items.

Abstract: The invention relates to a device for the continuous coating of a strip-like substrate in a vacuum, especially for producing coating patterns on the substrate, with a printing roller and a backing roller, the substrate guided between the printing roller and the backing roller. The invention device includes a coating or release agent transferable to the substrate via the printing roller and a servo unit that has a controllable servo motor, wherein in a working position adjustable with the servo unit, the printing roller and the backing roller are in operative connection with one another. The object of the invention is to improve the abadjustability of the generic device. The object is achieved by the servo unit's having a controllable servo motor.

Abstract: The object of this invention is to provide a winding type plasma CVD apparatus in which quality of a layer can be made uniform by supplying a reaction gas uniformly to a deposition area of a film, and can perform a self-cleaning process of a deposition portion in the path of deposition onto the film. A film (22) is supported between a pair of movable rollers (33, 34) arranged on the upstream side and downstream side of the deposition portion (25) with regard to the traveling direction of the film, and then the film (22) is made to travel substantially linearly at the deposition position. Consequently, the distance between a shower plate (37) and the film (22) is kept constant, and the quality of the layer is made homogeneous. The film is heated by means of a metal belt (40) traveling simultaneously on the back side of the film. The moveable rollers (33, 34) ascend from the deposition position to the self-cleaning position, and the film (22) can be separated from the shower plate (37).

Abstract: A method and device for magnetron sputtering are provided. A magnetron coating system includes a first coating source and an auxiliary substrate arranged between the first coating source and an area into which a substrate to be coated is to be received. The system also includes a magnetron having a cathode composed of the auxiliary substrate. Additionally, the system includes a device structured and arranged to determine an area density of the auxiliary substrate.

Abstract: An aperture mask assembly includes a rotatable frame and a mask having apertures. A clamping arrangement is used to tension the mask and to conform the mask to a shape defined by the frame. Tension is applied to the mask in a direction substantially parallel to an axis of the frame and/or around the circumference of the shape defined by the frame. Deposition material emanating from a deposition source located within the rotatable frame is deposited through the mask apertures onto a web.

Abstract: This invention relates to a vacuum vapor-deposition apparatus for forming vapor-deposited films on a base film, thereby to produce vapor-deposited films, and also to a method of producing vapor-deposited films. In the vacuum vapor-deposition apparatus, the synchronizing means equalizes the circumference velocity v1 of the coating roll and the circumference velocity v2 of the takeup guide roll. Hence, v1=v2. Therefore, the takeup guide roll never rubs the vapor-deposited layer provided on the surface of the film. This eliminates the possibility that the vapor-deposited layer has scratches. The vapor-deposited layer can therefore possess desired properties.

Abstract: Methods and coaters for applying films onto a substrate (e.g., a large-area glass substrate) are disclosed. Certain embodiments involve a coater for applying thin films onto a sheet-like substrate. The coater in some embodiments has a transport system adapted for conveying the substrate along a path of substrate travel extending through the coater. The substrate transport system in certain embodiments includes an upward coating deposition gap. The coater preferably has a source of coating material adapted for delivering coating material upwardly through such gap and onto a bottom major surface of the substrate as the substrate is conveyed along a desired portion of the path of substrate travel, which portion of the path of substrate travel extends over the upward coating deposition gap.

Abstract: A roll to roll system for depositing a material on a workpiece is provided. In one embodiment, the system includes a drum, which rotates about an axis that is transverse to a process direction, and a number of PVD deposition units. The drum further includes a peripheral surface that includes a groove having a recessed workpiece contact surface that is parallel to the axis and disposed between a first side wall and a second side wall. A portion of the recessed workpiece contact surface supports a section of the workpiece and the first and second side walls maintain the section of the workpiece on the portion of the recessed workpiece contact surface as the workpiece is moved along the process direction. The PVD deposition units are disposed across from some of the portion of the peripheral surface and continuously deposit the material across a width of some of the section of the workpiece.

Abstract: A system and method for depositing ceramic materials, such as nitrides and oxides, including high temperature superconducting oxides on a tape substrate. The system includes a tape support assembly that comprises a rotatable drum. The rotatable drum supports at least one tape substrate axially disposed on the surface of the drum during the deposition of metals on the tape and subsequent oxidation to form the ceramic materials. The drum is located within a stator having a slot that is axially aligned with the drum. A space exists between the drum and stator. The space is filled with a predetermined partial pressure of a reactive gas. The drum, stator, and space are heated to a predetermined temperature. To form the ceramic material on the tape substrate, the drum is first rotated to align the tape substrate with the slot, and at least one metal is deposited on the substrate.

Abstract: The present invention provides a roll to roll system and a method to sputter deposit various conductive films on a back surface and a front surface of a continuous substrate to form protected base structures for Group IBIIIAVIA thin film solar cells. In one embodiment of the invention, a back protection film is sputter deposited onto the entire back side of the substrate in a first deposition station without transferring heat from the substrate. Next, a first front film is sputter deposited in a second deposition station to partially cover the front side of the substrate while heat is transferred from substrate by a cooling surface of a cooling mechanism in the second deposition station. The second film does not cover the edges of the substrate to avoid contaminating the cooling surface with the depositing material. Other embodiments are directed to specifics regarding the depositing of these films, adding other films, and a system for depositing the films.

Abstract: Method and apparatus for sputter coating an insulated wire with a silicon and metal alloy, to provide the wire with sufficient surface conductivity to protect against build-up of electrostatic charge. A sputtering target of silicon has a metal plate positioned close enough to the sputtering site on the target to permit metal atoms to be dislodged by sputtered silicon, and deposited with the silicon to form an alloy. In the disclosed form of the invention, the wire is insulated with a polyimide material and the metal alloyed with silicon in the sputtered coating is stainless steel.

Abstract: The invention provides a coater, and methods of using the coater, for depositing thin films onto generally-opposed major surfaces of a sheet-like substrate. The coater has a substrate transport system adapted for supporting the substrate in a vertical-offset configuration wherein the substrate is not in a perfectly vertical position but rather is offset from vertical by an acute angle. Preferably, the transport system includes a side support for supporting a rear major surface of the substrate. Preferably, the coater includes at least one coating apparatus (e.g., which is adapted for delivering coating material) on each of two sides of the path of substrate travel.

Abstract: The problem solved by this Invention is to provide a vacuum evaporation deposition method of the winding type and a vacuum evaporation deposition apparatus of the winding type which can form a metal film on a base film made of single layer plastic film without thermal deformation and with superior productivity. To solve the above problem, there are provided an electron beam irradiator 21 for irradiating an electron beam onto a film material 12 arranged between an unwinding roller 13 and a deposition source 16; an auxiliary roller 18 for guiding the film 12 in contact with the deposited metal layer and arranged between a can roller 14 and a winding roller 15; a DC bias power source 22 for applying a DC voltage between the auxiliary roller 18 and the can roller 14; electricity removing unit 23 for removing electricity from the film 12 and arranged between the can roller 14 and the winding roller 15.

Abstract: Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentially onto a moving substrate web.

Abstract: A web coating apparatus with a vacuum chamber (1) has between a rear wall (18) and at least one removable closing plate (22), housing member (20) with a planar cover (10), and at least one guide roll (12, 13, 14, 15) and a coating cylinder (9) with an axle (A) and at least one coating source (39a, 39b, 39c) are arranged in the vacuum chamber (1). To reduce structural height and width and to achieve an easily viewable and controllable web path while avoiding particle formation in the reach of the coating cylinder (9), provision is made pursuant to the invention that the ends of the at least one guide roll (12, 13, 14, 15) and of the coating cylinder are affixed by supporting elements (16, 17 and 19) with bearings to the cover (10) and that the cavity in the vacuum chamber (1) under the coating cylinder (9) is kept free of supporting elements.

Abstract: A method and apparatus for coating two sides of a single pane of glass or other substrate in a single pass through a coating apparatus. A sputtering line is provided, this line comprising a series of sputtering chambers. At least one of the chambers comprises a downward sputtering chamber having an upper target. At least one of the chambers comprises an upward sputtering chamber having a lower target. In some embodiments, the upper and lower targets are rotary targets. The coating apparatus advantageously has a plurality of transport rollers for conveying the substrate along the sputtering line. In certain embodiments, a majority of the chambers of the sputtering line are downward sputtering chambers each having only an upper target with no lower target.

Abstract: A roll to roll, film forming system overcoming the shortcomings of current roll to roll processing is presented; The roll to roll enabled cartridge is loaded with a bolt of fresh flexible substrate. A skate couples with a cartridge, forms a seal with the cartridge's bottom aperture and drives the cartridge along a rail to an array of deposition heads. A head mates with the cartridge top forming a pressure seal around the variable area deposition aperture. The mating of the skate, cartridge and head form a pressure vessel wherein a film forming environment may be maintained. As the substrate advances past the deposition aperture a layer is formed, potentially from bolt end to bolt end. Device growth continues from one head to another, as grown device encapsulation seal inclusive, aperture environmental seals applied, labeled cartridge is routed to dock, skate returns to system start.

Abstract: The preferred embodiments described herein provide a Penning discharge plasma source. The magnetic and electric field arrangement, similar to a Penning discharge, effectively traps the electron Hall current in a region between two surfaces. When a substrate (10) is positioned proximal to at least one of the electrodes (11, 12) and is moved relative to the plasma, the substrate (10) is plasma treated, coated or otherwise modified depending upon the process gas used and the process pressure. This confinement arrangement produces dramatic results not resembling known prior art. Using this new source, many applications for PECVD, plasma etching, plasma treating, sputtering or other plasma processes will be substantial improved or made possible. In particular, applications using flexible webs (10) are benefited.

Abstract: Systems and methods are described for the synthesis of films, coatings or layers. An apparatus includes a first holder; a second holder coupled to the first holder; a linkage coupled to the first holder and the second holder to move the first holder relative to the second holder; a reusable tool coupled to the first holder, the reusable tool including a raised patterned surface; and a release layer coupled to the raised patterned surface of the reusable tool.

Abstract: A method for the deposition of a metal layer on a substrate (1) uses a cold plasma inside an enclosure (7) heated to avoid the formation of a metal deposit at its surface. The enclosure has an inlet (21) and an outlet (22) for the substrate with a source of metal vapor between them, made up of an electrode to form a plasma (6) with the substrate or a separate electrically conducting element as a counter-electrode. The deposition metal is introduced in the liquid state in a retention tank (8) and is maintained as a liquid at an essentially constant level during the formation of the metal layer on the substrate. An Independent claim is included for the device used to put this method of coating a substrate into service.

Abstract: A glass article which has a water-sheeting coating and a method of applying coatings to opposed sides of a substrate are described. In one embodiment, a glass sheet is provided bearing a sputtered water-sheeting coating comprising silica on an exterior surface and bearing a reflective coating on an interior surface. The interior surface of a sheet of glass can be coated with a reflective coating by sputtering, in sequence, at least one dielectric layer, at least one metal layer, and at least one dielectric layer. The exterior surface of the glass can be coated with a water-sheeting coating by sputtering silica directly onto the exterior surface of the sheet of glass. Both the reflective coating and the water-sheeting coating can be applied during the same pass through the same sputter coating apparatus.

Abstract: A continuous coating system has several treatment chambers (1, 2) that are arranged one after the other in such a way that in each case, a wall (3) of one treatment chamber (1) having a passage (5) contacts a wall (4) in the adjacent treatment chamber (2) that also has a passage (6). One of the passages (5) is provided in a sealing insert (7), which supports itself on the same side with a first support surface (9) on the wall (3) of one treatment chamber (1) and with a second support surface (10) against the wall (4) of the adjacent treatment chamber (2). Between the two support surfaces (9, 10) and the respective walls (3, 4), in each case there is a surrounding gasket (13, 14) against the respective support surface (9, 10) and the wall (3, 4).

Abstract: A system for coating band-shaped material, where the band-shaped material travels through at least one process chamber in which there is a vacuum, and at least one cooling roller. On the peripheral surface of each cooling roller are at least two magnetron sputter sources that are arranged separate from one another in magnetron chambers, which are formed by separate magnetron chamber walls and allow each chamber to be evacuated, so the pressure in the magnetron chamber can be maintained higher than that in the process chamber. The magnetron chamber walls and the magnetron sputter sources can be mounted on a common carriage, which is displaceable parallel to the cooling roller axis. The result is the reduction in the maintenance costs in cleaning of the magnetron chamber walls and at the same time improvement of the separation of gas between the magnetron chambers and the process chamber.

Abstract: The present invention is a deposition system for the production of coated substrates that provides a first deposition process that subsequently feeds a second deposition process and where the two deposition processes are occurring concurrently. The consecutive deposition system includes two dynamically isolated deposition chambers. The substrate is helically wrapped about a cooling block within the first deposition chamber such that the tape is exposed to a deposition zone a number of times sufficient to correspond to the desired film thickness. A shielding element may be included in the second deposition chamber to limit the size of the second chamber deposition zone and thus the film thickness of the second coating layer.

Abstract: Disclosed herein is an improved gas gate for interconnecting regions of differing gaseous composition and/or pressure, more particularly between atmosphere and a vacuum. The gas gate includes a cylinder within a housing situated between the regions of differing gaseous pressure, wherein the gas gate provides for choke mode transonic flow of air leaks between the regions. A web of substrate material is adapted to move between the regions with at least one roller in a first region and at least one roller in a second region. The rollers are positioned to create sufficient tension as the web advances over the top peripheral portion of the cylinder between the two regions or under the bottom peripheral portion of the cylinder between the two regions.

Abstract: A film deposition apparatus equipped with a vacuum chamber, comprising a pair of rollers for vertically traveling a continuous sheet as a substrate, and a pair of sputtering cathodes for continuously depositing the film on the surfaces of the sheet in the vacuum chamber. The cathodes are vertically arranged and horizontally faced each other. The sheet is traveled between a pair of the cathodes. The apparatus and the film deposition process using it make it possible to deposit a film even on surfaces of a flexible sheet without causing problems such as defective film deposition or abnormal discharge, while ensuring stable, continuous, long-term operation.

Abstract: A continuous feed coater for coating a length of substrate with vaporized or sprayed material, is disclosed. A specific example is a roll-to-roll coater which includes two lower supply rollers for supporting two webs of uncoated material, and two upper take-up rollers for supporting the webs after they are coated. A central web-support forms a plenum that acts as a deposition chimney or chamber by bringing the two webs into close proximity to each other to form two large walls of the plenum. The ends of the webs are sealed using side dams to form the chimney with a rectangular cross section such that the vapor cannot exit from the edges of the material. The vaporized coating constituents to be deposited on the rolled material are directed into the deposition plenum from a coating material supply source located at the bottom of the plenum, and are exhausted through the top of the plenum.

Abstract: Plasma processing system and methods for stripping the buffer and, optionally, removing the cladding from an optical fiber. The plasma processing system includes a holder capable of holding one or more optical fibers such that a mid-span portion of each optical fiber is exposed to a plasma generated within a processing chamber of the system and the ends of each optical fiber are unaffected by the plasma treatment. Tapered transition zones are created between the plasma-treated portion of the optical fiber and the shielded ends. Treatment may be accomplished using a plasma containing atomic and molecular radicals and ions of fluorine and oxygen.

Abstract: Apparatus and methods for coating a substrate. In an exemplary embodiment, the apparatus are used to create a metallized substrate for use as an EMI/RFI shield. The apparatus typically includes a movable processing apparatus that is movable orthogonal to the substrate to treat the substrate. The processing apparatus can include a surface preparation assembly, a heating assembly, a thermoforming assembly, a metallizing assembly, a cutting assembly, or the like.

Abstract: In one embodiment, the invention is directed to aperture mask deposition techniques using aperture mask patterns formed in one or more elongated webs of flexible film. The techniques involve sequentially depositing material through mask patterns formed in the film to define layers, or portions of layers, of the circuit. A deposition substrate can also be formed from an elongated web, and the deposition substrate web can be fed through a series of deposition stations. Each deposition station may have an elongated web formed with aperture mask patterns. The elongated web of mask patterns feeds in a direction perpendicular to the deposition substrate web. In this manner, the circuit creation process can be performed in-line. Moreover, the process can be automated to reduce human error and increase throughput.

Abstract: Systems and methods are described for synthesis of films, coatings or layers. An apparatus includes a first holder; a second holder coupled to the first holder; a linkage coupled to the first holder and the second holder to move the first holder relative to the second holder; a reusable tool coupled to the first holder, the reusable tool including a raised patterned surface; and a release layer coupled to the raised patterned surface of the reusable tool.

Abstract: The preferred embodiments described herein provide a Penning discharge plasma source. The magnetic and electric field arrangement, similar to a Penning discharge, effectively traps the electron Hall current in a region between two surfaces. When a substrate (10) is positioned proximal to at least one of the electrodes (11, 12) and is moved relative to the plasma, the substrate (10) is plasma treated, coated or otherwise modified depending upon the process gas used and the process pressure. This confinement arrangement produces dramatic results not resembling known prior art. Using this new source, many applications for PECVD, plasma etching, plasma treating, sputtering or other plasma processes will be substantial improved or made possible. In particular, applications using flexible webs (10) are benefited.

Abstract: An apparatus, for forming an electrode for a lithium secondary cell capable of readily forming an active material layer constituted by at least two elements and controlling the composition of the active material layer, comprises a first sputtering source for sputtering a first material forming the active material layer onto the surface of the collector and a second sputtering source for sputtering a second material forming the active material layer onto the surface of the collector. Plasma regions of the first and second sputtering sources are arranged to overlap each other. The active material layer constituted by at least two elements is readily formed with excellent reproducibility, and its composition can be readily controlled by independently controlling power applied to the first sputtering source and the second sputtering source.