Abstract: A deposition mask is used to pattern a thin film 3 on a substrate 10 by depositing deposition particles through a plurality of openings K having a stripe pattern. The deposition mask includes a frame 65; a plurality of mask layers 70 provided in the frame so as to overlap each other; and a support layer 71 provided between the mask layers 70. Each of the mask layers 70 is formed by arranging a plurality of mask wires 72 in a stripe pattern in a tensioned state, and the support layer 71 is formed by arranging a plurality of support wires 74 in a tensioned state so as to cross the mask wires 72. A plurality of gaps 73 in each of the plurality of mask layers 70 overlap each other to form a plurality of through gaps 73a that linearly extend through all of the plurality of mask layers 70. The openings K are formed by the through gaps 73a.

Abstract: A method for deposition of a layer on a razor blade edge of a razor blade, the layer including at least two components, in an enclosure comprising at least first and second sputter targets, each sputter target including at least one of the components to be deposited on the edge and being adapted, in operation, to release the component in the enclosure.

Abstract: The present invention provides a sputtering apparatus and a film-forming method capable of forming a magnetic film having a reduced variation in the orientation of the magnetic anisotropy. The sputtering apparatus of the present invention is equipped with a rotatable cathode and a rotatable stage. The stage can have an electrostatic chuck. Moreover, the stage may electrically be connected with a bias power source capable of applying a bias voltage to the stage. Furthermore, the stage may have the electrostatic chuck and electrically be connected with the bias power source.

Abstract: A magnetron unit moving apparatus for preventing magnetization and magnetron sputtering equipment having the same. The magnetron unit moving apparatus includes a magnetron unit disposed adjacent to a target, to generate a specific magnetic field, and a movement unit to space the magnetron unit and the target apart such that a strength of a magnetic field generated over the target is within a predetermined reference strength range. It is possible to space the target and the magnetron unit apart so as to prevent the target from being magnetized when a process is not performed.

Abstract: A sputtering apparatus includes a substrate holder, a magnetic field applying unit, and target mounting table. The substrate holder includes a first stage which can mount a substrate and can rotate about a first rotating shaft, a second stage which can rotate about a second rotating shaft shifted from the first rotating shaft, a spinning unit which rotates the first stage about the first rotating shaft, and a revolving unit which revolves the first stage about the second rotating shaft. The magnetic field applying unit applies a magnetic field in a specific direction to the substrate. The target mounting table can mount a target configured to deposit a film on the substrate. The spinning unit rotates the first stage in a direction opposite to that of the rotation of the revolving unit, and rotates the first stage so as to maintain the specific direction of the magnetic field.

Abstract: Planetary carriers (22) for workpieces mounted on a carousel (19) are provided within a vacuum chamber. A source (24) for a cloud comprising ions (CL) is provided so that a central axis (ACL) of the cloud intercepts the rotary axis (A20) of the carousel (19). The cloud (CL) has an ion density profile at the moving path (T) of planetary axes (A22) which drops to 50% of the maximum ion density at a distance from the addressed center axis (ACL) which is at most half the diameter of the planetary carriers (22). When workpieces upon the planetary carriers (22) are etched by the cloud comprising ions material which is etched off is substantially not redeposited on neighboring planetary carriers but rather ejected towards the wall of the vacuum chamber.

Abstract: A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

Abstract: A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

Abstract: A coating apparatus includes a chamber device and a transporting device. The chamber device defines two coating chambers, two parallel coating channels, and a transportation channel communicating with the coating channels. The coating chambers are separated from each other. The coating chambers and the coating channels are alternately arranged. Each coating chamber defines at least one coating slot communicating with the respective coating channel. The transporting device includes a shaft rotatable with respect to the chamber device and a carrying board fixed on the shaft. The shaft is axially movable in the transportation channel. The carrying board is receivable in each of the coating channels for exposing a substrate to the corresponding coating chamber via the associated coating slot. The carrying board is rotatable about the shaft in each of the coating channels and jointly movable with the shaft in and along the transportation channel between the coating channels.

Abstract: A coating device includes a rotatable base, a board for holding workpieces, a positioning shaft positioned on the rotatable base, two eccentric wheels, a rack, and two reciprocating shafts. The two eccentric wheels are fixed on the positioning shaft and extend from the positioning shaft along two opposite directions. The two eccentric wheels are parallel to and spaced from each other. The rack is rotatably connected to the rotatable base. The rack is capable of rotating around the positioning shaft. Each reciprocating shaft is positioned on the rack. Each reciprocating shaft includes a hinge portion rotatably connected to an end of the board and a sliding portion slidably connected to the edge of a corresponding eccentric wheel. The two eccentric wheels are capable of driving the two reciprocating shafts to move alternately toward and away from the positioning shaft along radial directions of the positioning shaft.

Abstract: A sputter-coating apparatus is configured for forming coatings on a plurality of workpieces, and includes a deposition chamber defining a cavity, a plurality of targets received in the cavity, and a plurality of supporting assemblies. Each target includes a first target plate and an opposite second target plate. The supporting assemblies are received in the cavity and arranged between the first target plates and the second target plates. Each supporting assembly includes a hollow rotating post for rotating about a first axis substantially parallel to a lengthwise direction thereof, at least one support extending from the post, and at least one driving unit. Each support includes a connecting arm rotatably connected to the post and a fixing portion attached to the connecting arm for supporting a workpiece. The driving unit is configured for driving each connecting arm to rotate relative to the corresponding post about a second axis.

Abstract: A sputtering device includes a main body and a loading device received in the main body. The main body includes a top portion, a bottom portion, and a sidewall connected between the top portion and the bottom portion, an upper bearing mounted on the top portion, and a lower bearing mounted on the bottom portion. The loading device includes an outer frame, an inner frame received in the outer frame, and a gear device arranged between the outer frame and the in inner frame. The outer frame is rotatably connected to the upper bearing and includes a plurality of first rods arranged in a first circle. The inner frame is rotatably connected to the lower bearing and includes a plurality of second rods arranged in a second circle. The gear device is configured for bringing the outer frame and the inner frame to rotate in opposite directions.

Abstract: A carrier for use during sputtering includes a main body and support members. The main body defines a receiving space and includes a lateral surface defining at least one groove extending along a longitudinal direction. The receiving space and the at least one groove communicate with each other. The at least one groove is defined by a first surface and a second surface. The first surface defines recessed portions along the longitudinal direction and communicates with the receiving space. The support members are used for hanging workpieces. Each of the support members includes at least one support arm protruding from the lateral surface and is selectively and movably retained by one of the recessed portions.

Abstract: The present invention relates to a magnetron sputtering device including a large ring cathode having a defined inner radius. The position of the ring cathode is offset in relation to a center point of a planetary drive system. An anode or reactive gas source may be located within the inner radius of the ring cathode. Lower defect rates are obtained through the lower power density at the cathode which suppresses arcing, while runoff is minimized by the cathode to planet geometry without the use of a mask.

Abstract: A coating apparatus includes a chamber device and a transporting device. The chamber device defines two separated coating chambers, two coating channels, which are alternately arranged, two coating slots communicating the coating chambers with the coating channels respectively, and a transportation channel extending to intersect the coating chambers and the coating channels and communicate with the coating channels. The transporting device includes a carrying board for carrying a substrate to be coated and an a driver for driving the carrying board to move along the transportation channel and to rotate the carrying board into one of the coating channels so that the substrate faces and aligns a corresponding coating chamber via a corresponding coating slot.

Abstract: A sputter-coating apparatus for coating a plurality of workpieces includes a deposition case defining a cavity, a supporting assembly received in the cavity, and a target assembly received in the cavity and extending through the supporting assembly to face the workpieces. The supporting assembly includes a plurality of supporting members. Each supporting member includes a body and a plurality of adjusting units extending through the body. Each adjusting unit includes a supporting pole fixed to the body, a first fixing pole and a second fixing pole fixedly connected to the supporting pole and radially extending from the supporting pole, a first threaded pole and a second threaded pole retractably connected to the supporting pole and radially extending from the supporting pole, and a driving member received in the supporting pole for driving the first threaded pole and the second threaded pole to retract relative to the supporting pole.

Abstract: The present disclosure describes a method of coating a substrate, the method including forming a layer of sputtered material on the substrate. Forming the layer of sputtered material may include: sputtering material from at least one target over the substrate; varying the relative position between the at least one target and the substrate to a first position (I), which first position is maintained for a predetermined first time interval; and varying the relative position between the at least one target and the substrate to a second position (II), which second position is maintained for a predetermined second time interval. The present disclosure further describes a system for coating a substrate.

Abstract: The present invention provides a sputtering cathode whereby it is possible to increase the degree of freedom to adjust a distance between a target and a magnet unit. A sputtering cathode in accordance with one embodiment of the present invention includes a plurality of magnet units arranged at positions opposite to the rear surface of the target and a distance adjusting mechanism for separately adjusting a distance between the target and a magnet unit for each magnet unit. In addition, the sputtering cathode includes a reciprocating movement mechanism for reciprocating a plurality of magnet units in parallel to the rear surface of the target. The plurality of magnet units, the distance adjusting mechanism and the reciprocating movement mechanism may be housed in a magnet chamber that can be evacuated.

Abstract: A method and an apparatus for producing a steel wire for reinforcing an elastomeric material. The steel wire has a metal core and a coating layer made of a metal alloy material having a composition including at least one first metal component and at least one second metal component. The method includes the steps of: a) conveying the steel core along a predetermined path in a substantially continuous manner; b) co-sputtering at least one first powered cathode made of said first metal component and at least one second powered cathode made of said second metal component onto the steel core being moved along the predetermined path to obtain a coating layer made of a metal alloy material of a first composition; and c) adjusting the power provided to at least one of the first and second cathodes to obtain a coating layer made of a metal alloy material of a second composition.

Abstract: A sputtering apparatus for forming a coating film made of a metallic film on a coating surface of a substrate by sputtering to have such a film thickness that gradually increases or gradually decreases from its one end side to the other end side. The apparatus comprising at least one supporting means supporting at least one substrate such that a coating surface thereof is opposed to an emission surface of a sputtering target at an angle, and at least one shielding member for preventing part of sputtering particles emitted from the emission surface from reaching the coating surface. The at least one shielding member being disposed in the vacuum chamber so as to be positioned in a space between the coating surface of the at least one substrate and the emission surface of the sputtering target.

Abstract: A support device used in sputtering machine includes a chamber housing, a frame, at least one holding device, a first and second driving assemblies. The frame is rotatably mounted in the chamber housing. The holding device is rotatably mounted on the frame. The first driving assembly is received in the chamber housing and includes a first motor mounted on the chamber housing and a first shaft installed on the first motor. The first driving assembly is configured for driving the frame rotating in a plane by the first shaft. The second driving assembly is received in the chamber housing and includes a second motor mounted on the chamber housing and second shaft installed on the second motor. The second shaft adjacently parallels to the first shaft. The second driving assembly is configured for driving the at least one holding device rotating in a plane perpendicular to the rotating plane of the frame.

Abstract: To provide a sputtering apparatus that enables oblique film forming by arranging a target and a substrate so as to allow sputtered particles emitted from the target to obliquely enter the substrate selectively, and can form a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. A sputtering apparatus includes a cathode having a sputtering target supporting surface, the cathode being provided with a rotation axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface, the stage being provided with a rotation axis about which the substrate supporting surface rotates, and the sputtering apparatus is constituted such that the sputtering target supporting surface and the substrate supporting surface face to each other, and are rotatable independently about respective rotation axes.

Abstract: Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180° to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture.

Abstract: A vacuum film-forming apparatus comprising substrate stages; vacuum chamber-forming containers opposed to the stages; a means for moving the substrate between the stages; and gas-introduction means connected to every containers, wherein one of the stage and the container is ascended or descended towards the other to bring the upper face of the stage and the opening of the container into contact with one another so that vacuum chambers can be formed and that a raw gas and/or a reactant gas can be introduced into each space of the chamber through each gas-introduction means to carry out either the adsorption or reaction step for allowing the raw gas to react with the reactant gas. The apparatus permits the independent establishment of process conditions for the adsorption and reaction processes and the better acceleration of the reaction between raw and reactant gases to give a film having excellent quality and the apparatus can be manufactured at a low cost.

Abstract: The invention relates to a partially disposable substrate holder used in magnetic latches for securing substrates on a planetary rotating platform suspended above a coating source in a vacuum chamber of a vapor deposition system, e.g. a chemical vapor deposition (CVD) system or a physical vapor deposition (PVD) system. The substrate holder includes a reusable base formed, at least partially, from a ferro-magnetic material, which is attracted to the magnetic latch, and a disposable cover formed from a relatively inexpensive, ferromagnetic, easily formable material, which encourages adherence of coating material and has a low vapor pressure at coating temperatures.

Abstract: The invention relates to a magnetic latch for securing substrates on a planetary rotating platform suspended above a coating source in a vacuum chamber of a vapor deposition system, e.g. a chemical vapor deposition (CVD) system or a physical vapor deposition (PVD) system. The magnetic latch includes a permanent magnetic, which is moveable between a latching position, in which the permanent magnet magnetizes the latch for attracting a substrate holder, and an unlatching position, in which the permanent magnet is connected in a bypass circuit, thereby demagnetizing the latch for releasing the substrate holder.

Abstract: A plasma-assisted sputter deposition system includes a reactor 1 into which a process gas is introduced; a doughnut-shaped electrode to be sputtered by plasma, in which a lower surface thereof is angled to a surface of a wafer; a spinning plate that spin on its central axis while moving over a circle above the doughnut-shaped electrode, in which the spinning plate contains magnet arrangement; an electrical power sources connected to the doughnut-shaped electrode, and a wafer holder for placing a wafer for film deposition, which is at rest during the film deposition.

Abstract: A method of depositing materials on a non-planar surface is disclosed. The method is effectuated by rotating non-planar substrates as they travel down a translational path of a processing chamber. As the non-planar substrates simultaneously rotate and translate down a processing chamber, the rotation exposes the whole or any desired portion of the surface area of the non-planar substrates to the deposition process, allowing for uniform deposition as desired. Alternatively, any predetermined pattern is able to be exposed on the surface of the non-planar substrates. Such a method effectuates manufacture of non-planar semiconductor devices, including, but not limited to, non-planar light emitting diodes, non-planar photovoltaic cells, and the like.

Abstract: The invention relates to a method for operating a magnetron sputter cathode, in particular a tube cathode or several tube cathodes forming an array. In such cathodes a target passes through a magnetic field, whereby induction currents flow in the target which distort the magnetic field. This results in the nonuniform coating of a substrate. By having the relative movement between magnetic field and target alternately reverse its direction, the effect of the magnetic field distortion can be compensated. This yields greater uniformity of the coating on a substrate to be coated.

Abstract: A sputtering device includes at least: a vacuum container defining a vacuum space; a substrate holder installed rotatably in the vacuum space; a substrate installed on the substrate holder; a target for forming thin film on the substrate; and a rotatable sputtering cathode in which the target is installed. The sputtering cathode is slanted relative to the substrate, and a center of the target is eccentric to a rotation axis of the sputtering cathode.

Abstract: A sputtering apparatus for forming a film by a physical gas-phase growth on a substrate having a irregular or flat shape is provided including three or more axes for independently varying a relative positional relationship between a substrate and a cathode in the course of film formation.

Abstract: A sample holder for physical vapor deposition equipment, which is disposed in a vacuum chamber for holding samples, includes a transmission mechanism and a fastening mechanism. The transmission mechanism includes a stationary shaft and a transmission element. The fastening mechanism includes a rotation shaft unparalleled with the stationary shaft of the transmission mechanism, a support arm for securely holding the rotation shaft, and a rotational disk assembly that drives the rotation shaft and the support arm to rotate about the transmission mechanism. Two ends of the rotation shaft are connected to a rotation element and an affixation base. The rotation element rotates in response to the transmission element, thereby rendering the affixation base to perform inclined rotation. In this manner, the nano-meter ions can be coated continuously and homogeneously onto the sample surface to enhance the surface hardness, the erosion resistance and the life expectancy of the sample.

Abstract: The invention provides a method and apparatus for producing uniform, isotropic stresses in a sputtered film. In the presently preferred embodiment, a new sputtering geometry and a new domain of transport speed are presented, which together allow the achievement of the maximum stress that the film material can hold while avoiding X-Y stress anisotropy and avoiding stress non-uniformity across the substrate.

Abstract: The invention relates to a drive mechanism for a vacuum treatment apparatus by which substrate holders can be transported around an axis (A—A) from an entrance airlock to an exit airlock. A stationary supporting column (1) is disposed in the center and on it a rotatory drive chamber (6) is borne which has control rods (9) for a rotation and a radial displacement of the substrate holders. In the rotatory drive chamber (6), a motor (4) and rotatory displacement drives for the control rods (9) are arranged on the supporting column (1), the control rods being in active connection each with a corresponding substrate holder.

Abstract: An apparatus and method for depositing plural layers of materials on a substrate within a single vacuum chamber allows high-throughput deposition of structures such as these for GMR and MRAM application. An indexing mechanism aligns a substrate with each of plural targets according to the sequence of the layers in the structure. Each target deposits material using a static physical-vapor deposition technique. A shutter can be interposed between a target and a substrate to block the deposition process for improved deposition control. The shutter can also preclean a target or the substrate and can also be used for mechanical chopping of the deposition process. In alternative embodiments, plural substrates may be aligned sequentially with plural targets to allow simultaneous deposition of plural structures within the single vacuum chamber.

Abstract: An exemplary configurable vacuum system is provided for use in coating or plating that provides the capability and versatility to handle substrates of significantly different shapes and sizes. The configurable vacuum system includes a vacuum table assembly, a mechanical drive, an electrical feed through, a filament, and a vacuum chamber. The vacuum table assembly may include a support frame, a sliding means, such as a roller or rollers, an insulated surface, and a platform operable to rotate and support the substrate. The mechanical drive is operable to rotate the platform, the electrical feed through provides an electrical signal to the substrate, and the filament is positioned relative the substrate. The vacuum chamber includes a main opening, an internal volume, and a receiving means, such as a railing or member, operable to receive and support the vacuum table assembly within the internal volume of the vacuum chamber and through the sliding means of the vacuum table assembly.

Abstract: An apparatus for sequential and isolated processing of a workpiece comprises a two compartment chamber and a mechanism to transfer the workpiece from one compartment to the other compartment. The transfer mechanism comprises two doors that seal the pathway between the two compartments between movement so that the two compartments are isolated and the workpiece can be processed sequentially and isolatedly in each compartment. The apparatus further comprises components to enable the processing of a workpiece: a delivery system to delivery precursor, a plasma source to generate a plasma and a vacuum pump to maintain a sub-atmospheric pressure. The preferred method of processing a workpiece is to deposit or adsorb a thin layer in the first compartment and then to transfer the workpiece to the second compartment for a reaction or a plasma reaction on the existing thin layer.

Abstract: An exemplary mobile plating system is provided for performing a plating process using virtually any known or available deposition technology for coating or plating as substrate. The mobile plating system may include a vacuum chamber positioned in a mobile storage volume, an external vacuum pump, and a control circuitry to control the operation of some or all of the operations of the external vacuum pump. The external vacuum pump is positioned in the mobile storage volume when the mobile plating system is in transit, and is positioned external to the mobile storage volume when the mobile plating system is stationary and in operation. The external vacuum pump may be mounted on a skid, and, in operation, the external vacuum pump couples with the vacuum chamber to assist with producing a desired pressure in the vacuum chamber.

Abstract: A vacuum processing apparatus 50 is provided with a bypass line 52 for causing a vacuum transfer chamber 4 and a load-lock chamber 12 to communicate with each other, and a bypass opening and shutting valve 54 for opening and shutting the corresponding bypass line 52, wherein by opening the bypass opening and shutting valve 54, a pressure-reduced state at the vacuum transfer chamber 4 side can be shifted to the load-lock chamber 12 side, and the pressure reduction of the load-lock chamber 12 can be carried out in a short time.

Abstract: Coating apparatus for disk-shaped workpieces has a transport chamber with a workpiece transport configuration having two linearly driven transport rams connected to a rotational axis. The rams are within shell lines of a rotation body about the axis and are extended/retracted in the same direction as the axis. A workpiece receiver is at the ends of each ram and two operating openings communicate the transport chamber with stations of the apparatus including a coating station. Surface normals of the openings are in the direction of shell lines. A pump with pump opening communicates with the transport chamber and coating station. At least one of the rams has a closure for closing the pump opening and forming a seal therefor.

Abstract: A film-forming device with a substrate rotating mechanism includes a susceptor 30 in the form of a circular disk; a base plate 6 positioned below the susceptor 30 and rotatably retaining the susceptor 30; a revolution generating section 5 rotating the susceptor 30 at the outer periphery of the susceptor 30; a plurality of substrate tray retaining sections 23 arranged on the susceptor 30; a plurality of annular substrate trays 20 rotatably supported in the corresponding substrate tray retaining sections 23; a rotation generating section 4 rotating the substrate trays 20; and a plurality of substrates W retained in the substrate trays 20. The substrates W are revolved by the rotation of the susceptor 30 and rotated by the rotation of the substrate trays 20 to apply a certain film-forming process. The substrates W are rotated and revolved by one or more revolution generating section 5 and the rotation generating section 4.

Abstract: An apparatus for the treatment of semiconductor wafers, comprising a supportive frame and a process table arranged on the supportive frame. The process table comprises a stationary upper platen and a stationary lower plate. An intermediate indexing plate is rotatively arranged between the upper platen and the lower plate. At least one wafer support pin is attached to the indexing plate for the support of a wafer by the indexing plate. An upper housing is arranged on the upper platen and an outer lower housing is arranged on the lower plate. A displacable lower isolation chamber is disposed within the outer lower housing, being displacable against the indexing plate to define a treatment module between the upper housing and the lower isolation chamber in which the wafer is treated. A wafer supporting treatment plate is arranged within the lower isolation chamber, for controlled rapid treatment of a wafer within the treatment module.

Abstract: An object of the invention is to provide a sputtering device which can be increased distribution of film formation and coverage distribution better than prior sputtering devices. Thus, this invention is that, in the sputtering device constituted of at least a substrate, a substrate holder for holding the substrate, at least one target for forming a thin film on the substrate, at least one sputtering cathodes each of which has the target and magnets arranged behind the substrate, an axis of the target is inclined to an axis of the sputtering cathode, and the sputtering cathode is rotated in its axis to make the target swing to the substrate.

Abstract: A vacuum chamber for transporting at least one workpiece has two or more openings defining respective opening areas for treating or handling the at least one workpiece. A transport device is arranged relative to the openings and includes a drive shaft rotatable around a drive shaft rotational axis. Two or more conveyors transport at least one workpiece. A linear driver is operationally independent to linearly move respective ones of the two or more conveyors relative to the drive shaft, with a drive component in a radial direction relative to the axis. An obstructing member is provided for closing the openings when one of the conveyors is positioned adjacent to the openings by rotating the transport device and is moved by the linear drive towards the opening.

Abstract: A sputtering apparatus for forming a film by a physical gas-phase growth on a substrate having a irregular or flat shape is provided including three or more axes for independently varying a relative positional relationship between a substrate and a cathode in the course of film formation.

Abstract: A gas driven rotation apparatus for use with a flow of drive gas includes a base member having an upper surface, a main platter overlying the upper surface of the base member, and a satellite platter overlying the main platter. The apparatus is adapted to direct the flow of drive gas between the upper surface of the base member and the main platter such that the main platter is rotated relative to the base member by the flow of drive gas. At least a portion of the flow of drive gas is directed from between the upper surface of the base member and the main platter to between the main platter and the satellite platter such that the satellite platter is rotated relative to the main platter by the at least a portion of the flow of drive gas.

Abstract: In order to ensure uniform coating of workpieces, workpiece holders carrying said workpieces are rotatably mounted at the edge of a turntable, a plurality of which are fastened in succession at adjustable distances to a drivable shaft. In order to trigger intermittent rotations of the workpiece holders, a driver finger of a driving device engages in each case a drive wheel thereof on each revolution of the turntable, so that the workpiece holders are rotated relative to the turntable through a specific angle in a direction opposite to the direction of rotation of said turntable. In order that no readjustment of the driver finger is required, for example in the case of a change of distances between the turntables, said driver finger is fastened to an extension of a rotating ring, which is mounted on the turntable itself so as to be non-displaceable in the direction of the shaft but rotatable about said shaft.

Abstract: A method and apparatus for producing an optically effective system of layers on a substrate, such as a lens for use in an optical device. A plasma supported sputter deposition process is employed which, for the purpose of reducing damage to the rear side (1b) first applies a protective layer (2) to the rear side and then applies a system of layers (3) on the front side (1a) of the substrate (1). The apparatus includes an evacuable sputter chamber and a substrate holder (5) with receiving elements (6) for the substrates, and the receiving elements are mounted to permit rotation about two mutually perpendicular axes.

Abstract: Numerous studies suggest that the current popular designs of coronary stents are functionally equivalent and suffer a 16 to 22 percent rate of restenosis. Although the use of coronary stents is growing, the benefits of their use remain controversial in certain clinical situations or indications due to their potential complications. The application of gas cluster ion beam (GCIB) surface modification such as smoothing or cleaning appears to reduce these complications and lead to genuine cost savings and an improvement in patient quality of life. The present invention is directed to the use of GCIB surface modification to overcome prior problems of thrombosis and restenosis. The atomic level surface smoothing of stents utilizing GCIB substantially reduces undesirable surface micro-roughness in medical coronary stents.

Abstract: A deposition system is described. The deposition system includes a deposition source that generates deposition flux comprising neutral atoms and molecules. A shield defining an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux through the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned adjacent to the shield. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion.