Abstract: In a plasma processing apparatus, a radio-frequency power supply adjusts frequencies of radio-frequency power in each bias cycle of electrical bias energy. The radio-frequency power supply uses a reference time series of frequencies of the radio-frequency power in each bias cycle. The radio-frequency power supply repeats using a changed time series of frequencies of the radio-frequency power in each bias cycle to increase a degree of match based on an evaluation value. The changed time series results from shifting the reference time series by a phase shift amount, scaling the reference time series in a frequency direction, or scaling two or more of multiple time zones of the reference time series in a time direction.

Abstract: A high-frequency power supply device includes: a first power supply that supplies first high-frequency power to a load by outputting a first high-frequency voltage having a first fundamental frequency; a second power supply that supplies second high-frequency power to the load by outputting a second high-frequency voltage having a second fundamental frequency lower than the first fundamental frequency; a first matching unit between the first power supply and the load; and a second matching unit between the second power supply and the load. When frequency-modulating the first high-frequency voltage with a modulation signal having a same frequency as the second fundamental frequency to output a modulated wave, the first power supply repeatedly performs search processing of a start phase of the modulation signal and search processing of a frequency shift amount of the modulated wave such that magnitude of a reflection coefficient or magnitude of reflected wave power reduces.

Abstract: A substrate processing system includes a processing chamber including a dielectric window and a substrate support arranged therein to support a substrate. A coil is arranged outside of the processing chamber adjacent to the dielectric window. A Faraday shield is arranged between the coil and the dielectric window. An RF generator is configured to supply RF power to the coil. The coil is coupled by stray capacitance and/or directly coupled to the Faraday shield. A capacitor is connected to one of the coil and the Faraday shield to adjust a position of a voltage standing wave along the coil.

Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an impedance matching circuit, a first power supply connected to the balun via the impedance matching circuit, and configured to supply a high frequency to the first electrode via the impedance matching circuit and the balun, a low-pass filter, and a second power supply configured to supply a voltage to the first electrode via the low-pass filter.

Abstract: A radio frequency (RF) generator device for supplying RF powers of different frequencies to multiple antennas disposed in a chamber is provided. The RF generator device includes a plurality of RF generators configured to supply the RF powers of the different frequencies to the multiple antennas, and a plurality of RF controllers configured to control the RF generators, respectively. Each of the RF controllers includes a fast Fourier transformer, and a filter. The fast Fourier transformer performs fast Fourier transform on a signal introduced as a reflected wave to decompose the signal into frequency components, and the filter removes waves having frequency components that are not outputted from the corresponding RF generator.

Abstract: The present invention provides a method for using ion filtering to adjust the number of ions delivered to a substrate. The method comprising a process chamber being provided that is operatively connected to a plasma source. The substrate is provided on a substrate support that is provided within the process chamber. An electrical bias source is provided that is operatively connected to an aperture plate that is provided in the process chamber. The substrate on the substrate support is processed using a plasma generated using the plasma source. A variable bias voltage from the electrical bias source is applied to the aperture plate during the plasma processing of the substrate. The plasma processing of the substrate can further comprise exposing the substrate to a plasma time division multiplex process which alternates between deposition and etching on the substrate.

Abstract: Provided is a generator including a power amplifier, at least one sampler, an RF output, a signal generator, a controller including a digital control portion and an analogue control portion, an analogue feedback path between the at least one sampler and the controller enabling an analogue signal representation of a signal to be provided to the controller, and a digital feedback path between the at least one sampler and the controller enabling a digital signal representation of the signal to be provided to the controller. The controller is configured to adjust the RF signal at the RF output from a first state into a second state based on the analogue signal representation and/or the digital signal representation.

Abstract: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. A surface floating potential of a substrate placed atop a stage in a positive column of the DC plasma is adjusted and maintained to a reference potential. A periodic biasing signal referenced to the reference potential is capacitively coupled to the stage to control a surface potential at the substrate according to: an active phase for provision of kinetic energy to free electrons in the DC plasma for activation of targeted bonds at the surface of the substrate; a neutralization phase for repelling of the free electrons from the surface of the substrate; and an initialization phase for restoring an initial condition of the surface floating potential.

Abstract: Embodiments of the present invention provide a polishing ring assembly suitable for polishing an electrostatic chuck and method of using the same. In one embodiment, the polishing ring assembly has a retaining ring assembly and an electrostatic chuck fixture. The retaining ring assembly includes an inner diameter and a top surface, a plurality of outer drive rings wherein the plurality of outer drive rings are placed on the top surface of the ceramic retaining ring. The electrostatic chuck fixture includes an electrostatic chuck drive plate adjacent to the inner diameter of in the ceramic retaining ring. The electrostatic chuck drive plate has a lock to secure retaining ring assembly with the electrostatic chuck fixture without transferring the weight from one assembly over to the other through the locking mechanism.

Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, and a second electrode electrically connected to the second balanced terminal. When Rp represents a resistance component between the first balanced terminal and the second balanced terminal when viewing a side of the first electrode and the second electrode from a side of the first balanced terminal and the second balanced terminal, and X represents an inductance between the first unbalanced terminal and the first balanced terminal, 1.5?X/Rp?5000 is satisfied.

Abstract: The present disclosure provides an induction coil assembly and a reaction chamber. The induction coil assembly includes an induction coil arranged over a dielectric window of the reaction chamber. Two ends of the induction coil include a power input end and a ground end, respectively. A vertical spacing between the two ends of the induction coil and the dielectric window is greater than a vertical spacing between a portion between the two ends of the induction coil and the dielectric window. The induction coil and the reaction chamber provided by the present disclosure may reduce the capacitive coupling of the two ends of the induction coil by ensuring that the coupling strength of an RF magnetic field satisfies the requirement to reduce sputtering on the dielectric window and improve process results.

Abstract: A substrate processing apparatus including an electrostatic chuck on which a substrate is mountable; a ring surrounding the electrostatic chuck, the ring including a first coupling groove; and a first floating electrode in the first coupling groove of the ring, the first floating electrode having a ring shape, wherein a top surface of the first floating electrode is exposed at the ring, and the first floating electrode has a tapered shape including an inclined surface that is inclined in a downward direction toward the electrostatic chuck.

Abstract: A plasma generation system includes a reference clock, a plurality of solid state generator modules, and a processing chamber. The reference clock is configured to generate a reference signal. Each solid state generator module is linked to an electronic switch and each electronic switch is linked to the reference clock. The solid state generator modules are each configured to generate an output based on the reference signal from the reference clock. The processing chamber is configured to receive the output of at least two of the solid state generator modules to combine the outputs of said solid state generator modules therein.

Abstract: In a plasma reactor a pumping compartment is separate from a plasma-treating compartment by a structure which includes a central frame. The frame is suspended to the casing of the reactor via spokes. The spokes allow free expansion and contraction of the frame under thermal loading. The slits between the spokes do not allow plasma ignition there and provide for a small flow resistance between the treatment compartment and the pumping compartment. The frame may act as a downholding member for a substrate on the smaller electrode.

Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, and a second electrode electrically connected to the second balanced terminal. When Rp represents a resistance component between the first balanced terminal and the second balanced terminal when viewing a side of the first electrode and the second electrode from a side of the first balanced terminal and the second balanced terminal, and X represents an inductance between the first unbalanced terminal and the first balanced terminal, 1.5?X/Rp?5000 is satisfied.

Abstract: After a precursor ion has been captured within an ion trap (2), electrons having a high energy equal to or higher than 30 eV are introduced from an electron irradiator (7) into the ion trap (2) to increase the number of charges of the ion through an interaction between the electrons and the ion. Hydrogen radicals are subsequently introduced from a hydrogen radical irradiator (5) into the ion trap (2) to dissociate the ion by a hydrogen-attachment dissociation (HAD) method. The larger the number of charges of the ion is, the higher the dissociation efficiency by the HAD method becomes. Therefore, for example, even in the case of using an ion source in which most of the generated ions are singly charged ions as in a MALDI ion source, the dissociation efficiency can be improved by increasing the number of charges of the precursor ion within the ion trap (2).

Abstract: A projection exposure apparatus (400) for semiconductor lithography contains at least one partial volume (4) that is closed off from the surroundings. The partial volume (4) contains a gas, from which a plasma can be produced. Conditioning elements (20, 21, 22, 23, 24, 25) for conditioning the plasma, in particular for neutralizing the plasma, are present in the partial volume. An associated method for operating a projection exposure apparatus is also disclosed.

Abstract: A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.

Abstract: A plasma generation antenna and a plasma processing apparatus can supply a gas and an electromagnetic wave effectively. A plasma processing apparatus 10 includes a processing chamber 100 in which a plasma process is performed; a wavelength shortening plate 480 configured to transmit an electromagnetic wave; and a plasma generation antenna 200 having a shower head 210 provided adjacent to the wavelength shortening plate 480. The shower head 210 is made of a conductor, and has a multiple number of gas holes 215 and a multiple number of slots 220 through which the electromagnetic wave passes. The slots 220 are provided at positions isolated from the gas holes 215.

Abstract: A plasma treatment installation including at least two stationary workpiece holders adapted for controlled rotation about their respective axis and having supporting plates for supporting workpieces for the treatment thereof, at least one hood to be set on a workpiece holder that is adapted to enclose each of a plurality of workpiece holders to form a sealed treatment space, and a manipulator for automatically equipping the supporting plates of a workpiece holder with workpieces, while the other workpiece holder is covered by the hood to perform the plasma treatment of the workpieces.

Abstract: In some embodiments, a plasma etching apparatus is provided for etching copper that includes (1) a chamber body having a process chamber adapted to receive a substrate; (2) an RF source coupled to an RF electrode; (3) a pedestal located in the processing chamber and adapted to support a substrate; and (4) a UV source configured to delivery UV light to the processing chamber during at least a portion of an etch process performed within the plasma etching apparatus. Numerous other aspects are provided.

Abstract: An apparatus for preparing specimens for microscopy including equipment for providing two or more of each of the following specimen processing activities under continuous vacuum conditions: plasma cleaning the specimen, ion beam or reactive ion beam etching the specimen, plasma etching the specimen and coating the specimen with a conductive material. Also, an apparatus and method for detecting a position of a surface of the specimen in a processing chamber, wherein the detected position is used to automatically move the specimen to appropriate locations for subsequent processing.

Abstract: An interventional device (12) is configured to be positioned in a body and includes an electrically operable unit (E1, E2) configured to carry out an interaction with the body upon a receipt of electric power. The device further includes a sensor (2) configured for wirelessly receiving electromagnetic energy from a remote source. The sensor is configured as a resonant circuit (2a, 2b) which converts the received electromagnetic energy into the electric power. The electrically operable device may include a diagnostic and/or therapeutic module.

Abstract: An apparatus for etching high aspect ratio features is provided. A plasma processing chamber is provided, comprising a chamber wall forming a plasma processing chamber enclosure, a lower electrode, an upper electrode, a gas inlet, and a gas outlet. A high frequency radio frequency (RF) power source is electrically connected to at least one of the upper electrode or lower electrode. A bias power system is electrically connected to both the upper electrode and the lower electrode, wherein the bias power system is able to provide a bias to the upper and lower electrodes with a magnitude of at least 500 volts, and wherein the bias to the lower electrode is pulsed to intermittently. A gas source is in fluid connection with the gas inlet. A controller is controllably connected to the gas source, the high frequency RF power source, and the bias power system.

Abstract: Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.

Abstract: An apparatus for combinatorial RF biasing at selectable spots includes one or more RF biasing elements that can be moved to or selectively activated to provide an RF hot spot. The RF hot spot may be selectively provided at various locations of a substrate such as a wafer undergoing combinatorial processing. An RF biasing element may be moved, via a movable arm, to a select location. Alternatively or additionally, more than one RF biasing element may be provided in an array so that an RF biasing element corresponding to the select location is activated. The apparatus may be coupled to or disposed within a substrate support such as a chuck such that the apparatus can operate with a combinatorial processing apparatus.

Abstract: A device for use with an RF generating source, a first electrode, a second electrode and an element. The RF generating source is operable to provide an RF signal to the first electrode and thereby create a potential between the first electrode and the second electrode. The device comprises a connecting portion and a current sink. The connecting portion is operable to electrically connect to one of the first electrode, the second electrode and an element. The current sink is in electrical connection with the connection portion and a path to ground. The current sink comprises a voltage threshold. The current sink is operable to conduct current from the connecting portion to ground when a voltage on the electrically connected one of the first electrode, the second electrode and the element is greater than the voltage threshold.

Abstract: According to one embodiment, an apparatus for manufacturing a template includes a vacuum chamber, an electrode and an adjustor. The vacuum chamber includes an inlet and an exhaust port of a reactive gas. The vacuum chamber is capable of maintaining an atmosphere depressurized below atmospheric pressure. The electrode is provided in an interior of the vacuum chamber. A high frequency voltage is applied to the electrode. A substrate is placed on the electrode. The substrate has a back surface on a side of the electrode. A recess is provided in the back surface. The adjustor is inserted into the recess. The adjustor is insulative.

Abstract: Methods and apparatus for controlling power distribution in a substrate processing system are provided. In some embodiments, a substrate processing system including a process chamber having a substrate support and a processing region disposed above the substrate support; a first conduit disposed above the processing region to provide a portion of a first toroidal path that extends through the first conduit and across the processing region; a second conduit disposed above the processing region to provide a portion of a second toroidal path that extends through the second conduit and across the processing region; an RF generator coupled to the first and second conduits to provide RF energy having a first frequency to each of the first and second conduits; an impedance matching network disposed between the RF generator and the first and second conduits; and a power divider to control the amount of RF energy provided to the first and second conduits from the RF generator.

Abstract: Disclosed is an apparatus and method for low-temperature plasma immersion processing of a variety of workpieces using accelerated ions, wherein low-temperature plasma is distributed around a cylindrical workpiece placed in a chamber, the workpiece is enclosed with a housing including a multi-slot extracting electrode to isolate the workpiece from plasma, and a negative potential sufficient to induce sputtering is applied to the workpiece and the electrode, so that ions from plasma are accelerated within the sheath formed between the extracting electrode and plasma, pass through the slot part of the electrode and bombard the workpiece, thus polishing the surface of the workpiece. This apparatus and method is effective for surface smoothing to ones of nm of large cylindrical substrates particularly substrates for micro or nanopattern transfer.

Abstract: The invention relates to a plasma chamber (10, 20, 30) having a first receiving device for a substrate (14, 24, 34) fastened to a first side and having a plasma generation unit for generating a plasma in the plasma chamber, wherein the plasma generation unit is connected or can be connected to a high frequency voltage supply (11, 21, 31). The high frequency voltage supply is designed to generate a modulated, high-frequency alternating voltage and to output said voltage to the plasma generation unit. The plasma generation unit is designed to generate the plasma using the modulated, high-frequency alternating voltage.

Abstract: The present invention relates to an inductively coupled plasma processing chamber and method for a cylindrical workpiece with a three-dimensional profile, and more particularly to an inductively coupled plasma processing reactor and method for a cylindrical workpiece with a three-dimensional profile, in which the workpiece serving as an internal RF antenna is connected to an RF power source through an impedance matching network at one end, and a terminating capacitor at another end so as to achieve low plasma contamination, confine dense uniform plasma in the substrate vicinity and suppress secondary electrons emitted from the substrate, and a plasma process can be applied to a 3-D linear semiconductor device, a metal, glass, ceramic or polymer substrate having planar or 3-D structured micro or nano patterns, and the like.

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.

Abstract: A composite coating device includes first to third processing chambers. The first processing chamber performs an ion beam etching as a pretreatment process in which an ion beam is irradiated on a surface of a magnetic head at a predetermined angle and the surface is removed for a predetermined depth. The second processing chamber performs a magnetron sputter deposition as a shock absorbing coating formation process in which a shock absorbing coating is formed on the pretreated surface. The third processing chamber performs an electron cyclotron resonance plasma chemical vapor epitaxy or a cathode arc discharge deposition as an overcoat formation process in which an overcoat is formed on the shock absorbing coating. A preparation chamber communicates with the first to third processing chambers through opening and closing devices for transferring the magnetic head.

Abstract: In an apparatus and method for magnetic field assisted electrochemical discharge machining (ECDM), the magneto hydrodynamic (MHD) effect is utilized to improve the thickness of bubble film and the electrolyte circulation so as to enhance the machining accuracy and efficiency. Since charged ions in a magnetic field are induced by Lorenz force to move, and the electrolysis bubbles generated in the ECDM process are suffused with electrification ions on their surfaces, the electrolysis bubbles can be forced to move in the direction of the magnetic field without the need of mechanical disturbance. The present invention can be widely applied in the micro-machining of non-conductive brittle materials of different dimensions and shapes, comprising the forming of microchannels and microholes on a biochip, and in the micro-opto-electro-mechanical system (MOEMS) and various kinds of micro-machining fields. The machined surface is smooth and does not require a second time machining.

Abstract: A plasma processing apparatus includes a processing chamber; a lower center electrode mounting thereon a target substrate; a lower peripheral electrode; an upper electrode disposed above the lower center electrode; a gas supplying unit supplying a processing gas into the processing chamber; a first RF power supply outputting a first RF power for generating a plasma of the processing gas; a second RF power supply for outputting a second RF power for introducing ions into the substrate; and a central feed conductor connected to a rear surface of the lower center electrode. The apparatus further includes a circumferential feed conductor connected to a rear surface of the lower peripheral electrode to bypass and supply some of the first RF power to the lower peripheral electrode; and a movable feed conductor electrically connecting the central feed conductor and the circumferential feed conductor for the first RF power by capacitance coupling.

Abstract: A method for igniting a plasma in a semiconductor process chamber is provided herein. In one embodiment, a method for igniting a plasma in a semiconductor substrate process chamber having an electrically isolated anode, wherein the plasma has failed to ignite upon applying a plasma ignition voltage to a cathode of the process chamber, includes the steps of reducing the magnitude of the voltage applied to the cathode; reapplying the plasma ignition voltage to the cathode; and monitoring the process chamber to determine if the plasma has ignited. The step of monitoring the process chamber may have a duration of a first period of time. The step of reducing the magnitude of the voltage applied to the cathode may have a duration of a second period of time. The steps of reducing the cathode voltage magnitude and reapplying the plasma ignition voltage may be repeated until a plasma ignites.

Abstract: The invention relates to an energy and media connection module for coating installations. Said module serves for supplying with cooling water, compressed air, process gases, signal, control and cathode power. It can be moved from one coating chamber to another coating chamber along a coating line by a single person in a short time. Further, it is possible to separate the energy connection module from a coating chamber for maintenance or displacement purposes without mechanically demounting all connections.

Abstract: The preferred embodiments described herein provide a Penning discharge plasma source. The magnetic and electric field arrangement, similar to a Penning discharge, effectively traps the electron Hall current in a region between two surfaces. When a substrate (10) is positioned proximal to at least one of the electrodes (11, 12) and is moved relative to the plasma, the substrate (10) is plasma treated, coated or otherwise modified depending upon the process gas used and the process pressure. This confinement arrangement produces dramatic results not resembling known prior art. Using this new source, many applications for PECVD, plasma etching, plasma treating, sputtering or other plasma processes will be substantial improved or made possible. In particular, applications using flexible webs (10) are benefited.

Abstract: An ion beam processing system emitting an ion beam at a workpiece to process the workpiece, provided with an electrode for applying an electric field to the workpiece, the potential of the electrode being made 0V or a negative potential, and a cover insulated from the electrode arranged at an ion beam incidence side of the electrode, thereby preventing or suppressing sputtered particles from redepositing on a master pattern and the processed surface to form burrs, and an ion beam processing method used with the same.

Abstract: A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a circular channel comprising an inner wall, an outer wall, and an end wall connected to an end of the inner wall and the outer wall to form an outlet port at the other ends of the inner and outer walls; a gas supply portion to supply a gas to an inside of the channel; and a plasma generating and accelerating portion to supply ionization energy to the gas inside the channel to generate a plasma beam, and to accelerate the generated plasma beam toward the outlet port, wherein one of the inner wall and outer wall of the channel is inclined at an angle so that the other end of the wall is located closer to a center of the plasma accelerating apparatus.

Abstract: First and second electrodes and magnets between the electrodes define an enclosure. The first electrode is biased at a high voltage to produce a high intensity electrical field. The second electrode is biased at a low negative voltage by a low alternating voltage to produce a low intensity electrical field. Electrons movable in a helical path in the enclosure near the first electrode ionize inert gas molecules in the enclosure. A wafer having a floating potential and an insulating layer is closely spaced from the second electrode. The second electrode and the wafer define plates of a first capacitor having a high impedance. The wafer and the inert gas ions in the enclosure define opposite plates of a second capacitor. The first capacitor accordingly controls and limits the speed at which the gas ions move to the insulating layer surface to etch this surface. The resultant etch, only a relatively few angstroms, of the insulating layer is smooth, uniform and accurate.

Abstract: The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-containing gas, and one or more additive gases, such as a hydrogen-rich hydrofluorocarbon gas, an inert gas and/or a carbon-oxygen gas. The process provides a low-k dielectric to a photoresist mask etching selectivity ratio greater than about 5:1, a low-k dielectric to a barrier/liner layer etching selectivity ratio greater about 10:1, and a low-k dielectric etch rate higher than about 4000 ?/min.

Abstract: The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner that resonance is generated at a frequency of high-frequency power supplied to the center of the back side and an electric field orthogonal to the electrode plate is generated, and a susceptor as a lower electrode so as to be opposed to each other, in order to reduce unevenness of an electric field distribution on the surface of the electrode in a plasma processing using a high-density plasma capable of coping with further refinement.

Abstract: A method and apparatus for maintaining a plasma in a plasma region, by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF electromagnetic field which interacts with the gas to create a plasma that contains electromagnetic energy components at frequencies that are harmonics of the fundamental frequency. The energy components at frequencies that are harmonics of the fundamental frequency are monitored and controlled by placing a harmonic multiplexer containing a matching network and RF filter elements in energy receiving communication with the plasma.

Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

Abstract: A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.

Abstract: A milling apparatus is provided in which temperature rise of a treatment-object in milling treatment, especially of the substrate thereof, is prevented. In the apparatus, ionization mechanism 2 comprises casing 20d having an opening at the center portion of the face thereof opposing to substrate 5 held by substrate holder 6; a filament is placed at the position where the straight line drawn from the filament to substrate 5 is intercepted by casing 20d; and electromagnets 31, 32 are provided around ionization mechanism 2 for generating a magnetic field to produce magnetic lines extending through opening 20j to substrate 5.

Abstract: The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner that resonance is generated at a frequency of high-frequency power supplied to the center of the back side and an electric field orthogonal to the electrode plate is generated, and a susceptor as a lower electrode so as to be opposed to each other, in order to reduce unevenness of an electric field distribution on the surface of the electrode in a plasma processing using a high-density plasma capable of coping with further refinement.

Abstract: Magnetically enhanced plasma processing methods and apparatus are described. A magnetically enhanced plasma processing apparatus according to the present invention includes an anode and a cathode that is positioned adjacent to the anode. An ionization source generates a weakly-ionized plasma proximate to the cathode. A magnet is positioned to generate a magnetic field proximate to the weakly-ionized plasma. The magnetic field substantially traps electrons in the weakly-ionized plasma proximate to the cathode. A power supply produces an electric field in a gap between the anode and the cathode. The electric field generates excited atoms in the weakly-ionized plasma and generates secondary electrons from the cathode. The secondary electrons ionize the excited atoms, thereby creating a strongly-ionized plasma.