Abstract: A method and system for backside unlayering a semiconductor device to expose FEOL semiconductor features of the device for subsequent electrical and/or physical probing. A window is formed within a backside substrate layer of the semiconductor. A collimated ion plasma is generated and directed so as to contact the semiconductor only within the backside window via an opening in a focusing shield. This focused collimated ion plasma contacts the semiconductor, only within the window, while the semiconductor is simultaneously being rotated and tilted by a temperature controlled stage, for uniform removal of semiconductor layering such that the semiconductor features, in a location on the semiconductor corresponding to the backside window, are exposed. Backside unlayering of the invention may be enhanced by CAIBE processing.

Abstract: A method for manufacturing a carbon nanotube (CNT) of a predetermined length is disclosed. The method includes generating an electric field to align one or more CNTs and severing the one or more aligned CNTs at a predetermined location. The severing each of the aligned CNTs may include etching the predetermined location of the one or more aligned CNTs and applying a voltage across the one or more etched CNTs.

Abstract: Positioning accuracy of a component in a substrate processing apparatus can be improved higher than a conventional case without increasing the insertion accuracy of positioning pins into positioning holes. Provided is a substrate processing apparatus including a mounting table 110 including a susceptor 114 having a substrate mounting surface 115 on which a wafer W is mounted and a focus ring mounting surface 116 on which a focus ring 124 is mounted; a plurality of positioning pins 200 made of a material expandable in a diametric direction by heating. Each positioning pin is inserted into a positioning hole (first reference hole) formed in the focus ring mounting surface of the susceptor and into a positioning hole (second reference hole) formed in the focus ring, and expanded in the diametric direction by heating and fitted into the positioning holes, thus allowing a position of the focus ring to be aligned.

Abstract: A probe storage container can supply a probe in a prober apparatus without being exposed to an atmospheric air. Preferably, the probe is stored in the probe storage container by removing an oxide film in a leading end portion of the probe in accordance with a dry treatment using an ion source, for example, without being exposed to the atmospheric air. It is thus possible to replace and attach the probe with respect to the prober apparatus without being exposed to the atmospheric air, avoiding formation of an oxide film on a surface of the probe. Further, a worker attaching the probe to the prober apparatus can work without being directly in contact with the probe, and it is possible to prevent the leading end portion of the probe from being broken. Accordingly, it is possible to stably measure an electric characteristic of a semiconductor device or the like on the wafer.

Abstract: A composite coating device includes first to third processing chambers. The first processing chamber performs an ion beam etching as a pretreatment process in which an ion beam is irradiated on a surface of a magnetic head at a predetermined angle and the surface is removed for a predetermined depth. The second processing chamber performs a magnetron sputter deposition as a shock absorbing coating formation process in which a shock absorbing coating is formed on the pretreated surface. The third processing chamber performs an electron cyclotron resonance plasma chemical vapor epitaxy or a cathode arc discharge deposition as an overcoat formation process in which an overcoat is formed on the shock absorbing coating. A preparation chamber communicates with the first to third processing chambers through opening and closing devices for transferring the magnetic head.

Abstract: A method for increasing etch depth uniformity in ion milling process in a wafer manufacturing process encompasses loading designated regions of a production pallet with carriers containing wafers to be ion milled. These designated regions have been predetermined to exhibit similar and preferred depths of etching. Non-designated regions of the production pallet are then loaded with dummy carriers and the wafers are ion milled.

Abstract: Disclosed are method and apparatus for manufacturing a magnetoresistive device which are suitable for manufacturing a high-quality magnetoresistive device by reducing damages caused during the processing of a multilayer magnetic film as a component of the magnetoresistive device, thereby preventing deterioration of magnetic characteristics due to such damages. Specifically disclosed is a method for manufacturing a magnetoresistive device, which includes processing a multilayer magnetic film by performing a reactive ion etching on a substrate which is provided with the multilayer magnetic film as a component of the magnetoresistive device. This method for manufacturing a magnetoresistive device includes irradiating the multilayer magnetic film with an ion beam after the reactive ion etching.

Abstract: A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or micro-electromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber.

Abstract: An improved method of controlling topographical variations when milling a cross-section of a structure, which can be used to reduce topographical variation on a cross-section of a write-head in order to improve the accuracy of metrology applications. Topographical variation is reduced by using a protective layer that comprises a material having mill rates at higher incidence angles that closely approximate the mill rates of the structure at those higher incidence angles. Topographical variation can be intentionally introduced by using a protective layer that comprises a material having mill rates at higher incidence angles that do not closely approximate the mill rates of the structure at those higher incidence angles.

Abstract: In a method of irradiating a gas cluster ion beam on a solid surface and smoothing the solid surface, the angle formed between the solid surface and the gas cluster ion beam is chosen to be between 1° and an angle less than 30°. In case the solid surface is relatively rough, the processing efficiency is raised by first irradiating a beam at an irradiation angle ? chosen to be something like 90° as a first step, and subsequently at an irradiation angle ? chosen to be 1° to less than 30° as a second step. Alternatively, the set of the aforementioned first step and second step is repeated several times.

Abstract: A coater having a substrate cleaning device is disclosed. The substrate cleaning device comprises an ion gun (i.e., an ion source) that is positioned beneath a path of substrate travel (e.g., beneath a substrate support) extending through the coater and that is adapted for treating a bottom major surface of a substrate. Certain embodiments involve an upward coating apparatus that is further along the path of substrate travel than the substrate cleaning device. In some embodiments of this nature, the upward coating apparatus is configured for depositing a photocatalytic coating upwardly onto the bottom major surface of the substrate. Certain embodiments of the invention involve a downward coating apparatus, wherein the substrate cleaning device is further along the path of substrate travel than the downward coating apparatus. Some embodiments involve an upward coating apparatus that is further along the path of substrate travel than the substrate cleaning device.

Abstract: A method of forming a contact hole in an insulating film coating amorphous Si having an irregular surface formed on an insulating substrate, for connecting the amorphous Si to a conductor film formed on the insulating film includes etching the insulating film using reactive ion etching to a depth whereat the irregularity does not disappear, and sputter-etching by physically colliding Ar radicals produced by Ar gas plasma discharge onto the surface of the amorphous Si.

Abstract: A wafer having a plurality of elements closely arranged thereon is irradiated with an ion beam while being conveyed in one direction by a conveying unit. Each of shutters adjusts an irradiation time during which a target area of the wafer is irradiated with the ion beam. Thus, a frequency in the target area is adjusted. Each of a plurality of mask holes in a pattern mask disposed between the wafer and the shutters corresponds to one area of the wafer. The mask holes are alternately displaced in a wafer conveying direction in which the wafer is conveyed, and are arranged in a plurality of columns perpendicular to the wafer conveying direction. To individually open and close the mask holes, the shutters are arranged to correspond to the respective mask holes. Thus, frequency adjustment, for areas in one column perpendicular to the wafer conveying direction, is performed in multiple steps.

Abstract: Embodiments of methods of modifying surface features on a workpiece with a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.

Abstract: An approach for providing uniformity control in an ion beam etch is described. In one embodiment, there is a method for providing uniform etching in an ion beam based etch process. In this embodiment, an ion beam is directed at a surface of a substrate. The surface of the substrate is etched with the ion beam. The etching is controlled to attain uniformity in the etch of the substrate. The control attains uniformity as a function of at least one ion beam based parameter selected from a plurality of ion beam based parameters.

Abstract: A milling device is disclosed for the preparation of microscopy specimens or other surface science applications through the use of ion bombardment. The device provides the ability to utilize both gross and fine modification of the specimen surface through the use of high and low energy ion sources. Precise control of the location of the specimen within the impingement beams created by the ion sources provides the ability to tilt and rotate the specimen with respect thereto. Locational control also permits the translocation of the specimen between the various sources under programmatic control and under consistent vacuum conditions. A load lock mechanism is also provided to permit the introduction of specimens into the device without loss of vacuum and with the ability to return the specimen to ambient temperature during such load and unload operation. The specimen may be observed and imaged during all active phases of operation.

Abstract: The present invention relates to methods and apparatus for ion milling, and more particularly relates to methods and apparatus for smoothing a surface using ion milling.

Abstract: A method of manufacturing a sample for an atom probe analysis of the invention is made one going through a step of manufacturing a concave/convex structure in both of a base needle and a transplantation sample piece by an etching working of an FIB, a step of jointing mutual members, and a step of bonding such that the concave/convex structure becomes a mesh form by a deposition working of the FIB.

Abstract: The invention provides methods for sharpening the tip of an electrical conductor. The methods of the invention are capable of producing tips with an apex radius of curvature less than 2 nm. The methods of the invention are based on simultaneous direction of ionized atoms towards the apex of a previously sharpened conducting tip and application of an electric potential difference to the tip. The sign of the charge on the ions is the same as the sign of the electric potential. The methods of the invention can be used to sharpen metal wires, metal wires tipped with conductive coatings, multi-walled carbon nanotubes, semiconducting nanowires, and semiconductors in other forms.

Abstract: A system and method for performing sputter etching includes an ion source that generates an ion current that is directed at a substrate and an electron source that generates an electron current directed at the substrate. Biasing circuitry biases the substrate with an a-symmetric bi-polar DC voltage pulse signal. The biasing circuitry is formed from a positive voltage source with respect to ground, a negative voltage source with respect to ground and a high frequency switch. At least one current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the substrate during one or more cycles of the a-symmetric bi-polar DC voltage pulse signal. A control system, coupled to the at least one current sensor, varies the ion current independently from the electron current. The ion and electron sources create a continuous plasma that is proximate the substrate and the biasing circuitry causes the substrate to alternatively attract ions and electrons from the plasma.

Abstract: A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defect, depositing a second layer of protective coating to areas of the phase shifting mask adjacent the bump defect, etching the first layer of protective coating and removing the bump defect.

Abstract: A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information. Such analysis enables detection of failures and the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing. The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed in any way to reveal a specific fault. Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters.

Abstract: An ion beam processing system emitting an ion beam at a workpiece to process the workpiece, provided with an electrode for applying an electric field to the workpiece, the potential of the electrode being made 0V or a negative potential, and a cover insulated from the electrode arranged at an ion beam incidence side of the electrode, thereby preventing or suppressing sputtered particles from redepositing on a master pattern and the processed surface to form burrs, and an ion beam processing method used with the same.

Abstract: A coater having a substrate cleaning device is disclosed. Also disclosed are methods of processing substrates in a coater equipped with a substrate cleaning device. The substrate cleaning device comprises an ion gun (i.e., an ion source) that is positioned beneath a path of substrate travel (e.g., beneath a substrate support) extending through the coater and that is adapted for treating a bottom major surface of a substrate. Certain embodiments involve an upward coating apparatus that is further along the path of substrate travel than the substrate cleaning device. In some embodiments of this nature, the upward coating apparatus is configured for depositing a photocatalytic coating upwardly onto the bottom major surface of the substrate. Certain embodiments of the invention involve a downward coating apparatus, wherein the substrate cleaning device is further along the path of substrate travel than the downward coating apparatus.

Abstract: There is provided by this invention a unique ion source for depositing thin films on a substrate in a vacuum chamber that neutralizes the positive electric charges that develop on the substrate and vacuum chamber apparatus that may cause arcing and degradation of the film deposition. A power supply with a reversing voltage waveform is utilized that neutralizes the electric charge on the substrate and the vacuum chamber apparatus. A power supply applies an ac voltage to the anode of the ion source and a rectified ac voltage to the cathode. The ground terminal of the power supply is connected to the vacuum chamber. The rectifying circuit is comprised of zener diodes that clamp the voltage in the circuit from spikes during plasma ignition and a capacitor connected to negatively bias the cathode when there is no plasma discharge.

Abstract: A method for producing magneto resistive heads includes the steps of positioning at least two magneto resistive elements in spaced relation to one another and placing the at least two magneto resistive elements in an ion milling environment where material is removed nonselectively from items in the environment. A property of at least two of the plurality of magneto resistive elements is monitored. In response to monitoring, one of the at least two magneto resistive elements is dynamically covered to prevent additional removal of material from the covered magneto resistive element.

Abstract: A milling device is disclosed for the preparation of microscopy specimens or other surface science applications through the use of ion bombardment. The device provides the ability to utilize both gross and fine modification of the specimen surface through the use of high and low energy ion sources. Precise control of the location of the specimen within the impingement beams created by the ion sources provides the ability to tilt and rotate the specimen with respect thereto. Locational control also permits the translocation of the specimen between the various sources under programmatic control and under consistent vacuum conditions. A load lock mechanism is also provided to permit the introduction of specimens into the device without loss of vacuum and with the ability to return the specimen to ambient temperature during such load and unload operation. The specimen may be observed and imaged during all active phases of operation.

Abstract: Provided is a plasma processing method for generating microplasma in a space of a microplasma source arranged in the vicinity of an object to be processed by supplying gas to the space and supplying electric power to a member located in the vicinity of the space, making activated particles emitted from an opening of the microplasma source joined to the space act on the object, and forming a fine linear portion on the object. The fine linear portion is formed on the object while flowing the gas to the neighborhood of the opening along the lengthwise direction of the fine linear portion parallel to the object.

Abstract: A method of repairing a semiconductor chip containing copper is taught, whereby copper is selectively removed from the chip. The method involves processing the chip inside a chamber in which the chip is exposed to various gases and an energy source, such as a focused ion beam. To the extent the chip may have non-copper materials, such as nitride and oxide layers, on top of the copper that is to be removed, those non-copper materials will first be selectively removed. Such removal typically results in a hole (a so-called “elevator shaft”) leading to the copper that is to be removed. Next, the method teaches the introduction of a combination of nitrogen and oxygen into the chamber and the directing of the ion beam at the spot where the copper is to be removed. In this manner, the copper on the chip is cleanly and reliably removed, without causing damage to the processing chamber.

Abstract: An apparatus and method of machining sliders to obtain the optimum PTR for each slider. An array of MEMS devices configured for angular actuation are provided, and a slider is placed in each MEMS device of the array. The ion milling of the sliders is controlled individually for each slider based on the relationship of the ion angle and relative etch rates of the slider components. The MEMS devices are controlled to ensure the ion incidence angle for each slider is such that the desired PTR of each slider is achieved.

Abstract: A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defect, depositing a second layer of protective coating to areas of the phase shifting mask adjacent the bump defect, etching the first layer of protective coating and removing the bump defect.

Abstract: Method and apparatus for reducing the curvature of a micromachined structure having lamella (12). Surface treatment by an ion beam (30) of the lamella (12) such as by sputtering removes regions of stress allowing the lamella (12) to return to a planar condition. The resulting outer surface is made suitable for use as a reflector and other purposes needing a substantially planar surface.

Abstract: A method for tuning an electro-mechanical device such as a MEMS device is disclosed. The method comprises operating a MEMS device in a depressurized system and using FIB micromachining to remove a portion of the MEMS device. Additionally, a method for tuning a plurality of MEMS devices by depositing an active layer and then removing a portion of the active layer using FIB micromachining. Also, a method for tuning a MEMS device and vacuum packaging the MEMS device in situ are provided.

Abstract: In conjunction with sputtering a metal, especially copper, into high aspect-ratio holes in a wafer, an oblique ion milling method in which argon ions or other particles having energies in the range of 200 to 1500 eV are directed to the wafer at between 10 and 35° to the wafer surface to sputter etch material sputter deposited preferentially on the upper corners of the holes. The milling may be performed in the sputter deposition chamber either simultaneously with the deposition or after it or performed afterwards in a separate milling reactor. A plurality of ion sources arranged around the chamber improve angular uniformity or arranged axially improve radial uniformity or vary the angle of incidence. An annular ion source about the chamber axis allows a plasma current loop. Anode layer ion sources and sources composed of copper are advantageous.

Abstract: Ion texturing methods and articles are disclosed.

Abstract: The present invention relates to a plasma generator that generates a plasma with a multi-step ionization process. The plasma generator includes an excited atom source that generates excited atoms from ground state atoms supplied by a feed gas source. A plasma chamber confines a volume of excited atoms generated by the excited atom source. An energy source is coupled to the volume of excited atoms confined by the plasma chamber. The energy source raises an energy of excited atoms in the volume of excited atoms so that at least a portion of the excited atoms in the volume of excited atoms is ionized, thereby generating a plasma with a multi-step ionization process.

Abstract: An apparatus for masked ion-beam lithography comprises a mask maintenance module for prolongation of the lifetime of the stencil mask. The module comprises a deposition means for depositing material to the side of the mask irradiated by the lithography beam, with at least one deposition source being positioned in front of the mask, and further comprises a sputter means in which at least one sputter source, positioned in front of the mask holder means and outside the path of the lithography beam, produces a sputter ion beam directed to the mask in order to sputter off material from said mask in a scanning procedure and compensate for inhomogeneity of deposition.

Abstract: The present invention relates to a plasma generator that generates a plasma with a multi-step ionization process. The plasma generator includes an excited atom source that generates excited atoms from ground state atoms supplied by a feed gas source. A plasma chamber confines a volume of excited atoms generated by the excited atom source. An energy source is coupled to the volume of excited atoms confined by the plasma chamber. The energy source raises an energy of excited atoms in the volume of excited atoms so that at least a portion of the excited atoms in the volume of excited atoms is ionized, thereby generating a plasma with a multi-step ionization process.

Abstract: System for frequency adjustment of piezoelectric resonators by ion etching in vacuum, based on arranging the resonators in rows and columns on a tray that can be moved to simultaneously expose two rows of resonators to the two straight-track portions of an ion gun having a race-track-shaped beam pattern whose straight tracks are spaced at an integer multiple of the inter-row spacing d. As the tray is moved in steps of d, two rows can be etched simultaneously, and each row can be sequentially exposed to a “pre-etch” and “final-etch” stage, with time between the two stages for the resonators to cool down after the “pre-etch” stage.

Abstract: The invention provides a susceptor with a built-in plasma generation electrode that can make the throughput by a range of plasma processing of a plate specimen uniform, and that has excellent plasma resistance, thermal conductivity and durability, and a manufacturing method that can obtain this susceptor with a built-in plasma generation electrode easily and economically.

Abstract: A method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods. The apparatus includes silicon substrate as the silicon source, and metal foils are used as catalyst. Methods of surface modification of the as-synthesized silicon cones for field emission application have also been developed, including hydrofluoric acid etching, annealing and low work-function metal coating. Nano-structure modification based on silicon cones takes advantage of the fact that the cone tip consists of metal/metal siliside, which can be used as catalyst and template for nanowires growth. A method and an apparatus have been developed to grow silicon oxide/silicon nanowires on tips of the silicon cones.

Abstract: We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer. A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces.

Abstract: Numerous studies suggest that the current popular designs of coronary stents are functionally equivalent and suffer a 16 to 22 percent rate of restenosis. Although the use of coronary stents is growing, the benefits of their use remain controversial in certain clinical situations or indications due to their potential complications. The application of gas cluster ion beam (GCIB) surface modification such as smoothing or cleaning appears to reduce these complications and lead to genuine cost savings and an improvement in patient quality of life. The present invention is directed to the use of GCIB surface modification to overcome prior problems of thrombosis and restenosis. The atomic level surface smoothing of stents utilizing GCIB substantially reduces undesirable surface micro-roughness in medical coronary stents.

Abstract: A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defect, depositing a second layer of protective coating to areas of the phase shifting mask adjacent the bump defect, etching the first layer of protective coating and removing the bump defect.

Abstract: A charged particle beam uniformly removes material, particularly crystalline material, from an area of a target by compensating for or altering the crystal orientation or structure of the material to be removed. The invention is particularly suited for FIB micromachining of copper-based crystalline structures. Uniformity of material removal can be improved, for example, by passing incoming ions through a sacrificial layer formed on the surface of the material to be removed. The sacrificial layer is removed along with the material being milled. Uniformity of removal can also be improved by changing the morphology of the material to be removed, for example, by disrupting its crystal structure or by altering its topography.

Abstract: Substrate removal from a semiconductor chip having silicon-on-oxide (SOI) structure is enhanced via a method and system that provide a control for the removal process. According to an example embodiment of the present invention, a portion of substrate is removed from the back side of a semiconductor chip having a SOI structure and a backside opposite a circuit side. As the substrate is removed, secondary ions are sputtered from the back side. The sputtered ions are detected, and the substrate removal is controlled as a function of detected ions. In this manner, the portion of the substrate being removed can be detected and used to enhance the control of the substrate removal process, such as by detecting sputtered ions from the insulating portion of the SOI and using the insulating portion as an endpoint of the substrate removal process.

Abstract: The present invention provides apparatus and methods to carry out the task of both reducing the surface roughness (smoothing) and improving the thickness uniformity of, preferably, but not limited thereto, the top silicon film of a silicon-on-insulator (SOI) wafer or similar thin-film electronic and photonic materials (workpiece). It also provides a method and apparatus for smoothing the surface of a (preferably) SOI wafer (workpiece) and for making the surface of the silicon film of a (preferably) SOI wafer cleaner and more free from contaminants.

Abstract: The improved method for trimming a magnetic head utilizing a FIB tool includes a step of aligning the FIB tool milling boxes without imaging critical pole tip components and structure. The method includes the creation of an alignment box that is disposed in a known, fixed orientation relative to the FIB tool milling boxes. The FIB tool is aligned by imaging only the alignment box and by moving the alignment box relative to known pole tip structural characteristics that are disposed away from the critical pole tip components. The alignment box is visually aligned on non-sensitive pole tip components in such a manner that the milling boxes will be properly aligned relative to the sensitive pole tip components. FIB tool milling is thereafter performed within the milling boxes which have been accurately aligned without imaging of sensitive pole tip components.

Abstract: In order to eliminate a contact hole of a semiconductor substrate, a polymer dreg after ashing of all inside of a via hole is conducted, or an oxide layer on a barrier metal surface, hydrogen gas is changed to a hydrogen radical, the radical is primarily changed to a negative hydrogen ion, and the ion is introduced onto a wafer arranged in a vacuum container. In this manner, cleaning is done by assisting a negative hydrogen ion having its less generated secondary electrons without imparting plasma damage to an element.

Abstract: Regardless of the materials used in an artificial joint component design, the present invention applies gas cluster ion beam (GCIB) technology in order to modify the component's surface(s) so as to increase lubrication between contact surfaces, thereby substantially reducing wear debris, osteolysis complications, and accelerated wear failure. The approach of the surface modification comprises an atomic level surface patterning utilizing GCIB to apply a predetermined pattern to the surface(s) of the joint implant to reduce frictional wear at the interface of the surfaces. A reduction in wear debris by GCIB patterning on any surface(s) of a joint prosthesis reduces accelerated failure due to wear and osteolysis and results in a substantial cost savings to the healthcare system, and reduces patient pain and suffering.