Abstract: A shielding arrangement is described for a cathodic arc deposition apparatus which includes a contactor formed from an electrically conductive material and having an axially extending shaft and a cathode. The shielding arrangement includes a cup formed from an electrically conductive material surrounding a portion of the contactor shaft and a shield for preventing material from being deposited on the cup. The shielding arrangement includes a removable ring shield attached to the cup and a cylindrical shield formed from an electrically non-conductive material surrounding the cup and a portion of the shaft.

Abstract: The present invention provides a pulsed carbon plasma apparatus to produce a diamond-like carbon coating over an extended object, the coating having a high degree of thickness uniformity achieved by scanning the plasma flow over the surface of the object. The pulsed carbon plasma apparatus of the invention comprises a carbon plasma flow scanning device having at least one pair of deflecting coils, where the deflecting coils have, in the scanning plane, a different number of turns on opposite sides. The object may be made of metal, ceramic, glass or plastic. The coatings may be used to improve life and operating performance of tools and machine parts, and as decorative coatings.

Abstract: A PVD method is proposed for coating substrates (10) in a vacuum chamber (20) with at least one anode (30), a cathode (40) and a magnetic field source (42). The cathode (40) can be controlled by the magnetic field source (42) in relation to the direction of the separated material. The method is based on the additional step of effectively turning the magnetic field source before the coating process so that the particles separated from the cathode (40) by the arc can impact on a chamber wall and thus cleaning processes can be carried out in the chamber and at the cathode. It is further proposed that the coating should be carried out successively in relation to the height by moving the magnetic field source (42) upwards and downwards, wherein the magnetic field source (42) is turned relative to the cathode (40) during the upward and downward movement and thus the deposition rate is varied in relation to the height.

Abstract: The present invention relates to the depositing of carbon and carbon-based materials to produce hard carbon films or carbon-based films. The present methods for producing carbon films and carbon-based films include chemical vapour deposition and filtered arc systems. Both have problems. The present invention discloses a method and apparatus which utilises an arc system comprising an anode and a cathode both of graphite. The graphite anode is used to produce the carbon or carbon-based film precursor material. In order to control the quality and rate of deposition of the precursor material onto a substrate, the arc attachment area to the anode is controlled. Minimising the arc attachment area can increase the rate of deposition.

Abstract: A method and apparatus used for the application of plating/coating in a cathodic arc process to improve coating uniformity, deposition rates, quality, cost, packaging, arc triggering, target wear and other improvements is described in the patent. The process improvements utilize a cathode with external current switching to two or more electrical cathode contacts, employment of magnets on the backside of the cathode, a non-mechanical arc initiation trigger, patterned target surfaces, adjustable cathode insulation, current modulation, and new packaging schemes.

Abstract: An apparatus for the application of coatings in a vacuum comprising a plasma duct surrounded by a magnetic deflecting system communicating with a first plasma source and a coating chamber in which a substrate holder is arranged off of an optical axis of the plasma source, has at least one deflecting electrode mounted on one or more walls of the plasma duct. In one embodiment an isolated repelling or repelling electrode is positioned in the plasma duct downstream of the deflecting electrode where the tangential component of a deflecting magnetic field is strongest, connected to the positive pole of a current source which allows the isolated electrode current to be varied independently and increased above the level of the anode current. The deflecting electrode may serve as a getter pump to improve pumping efficiency and divert metal ions from the plasma flow.

Abstract: In the plasma processing device which utilizes a low pressure arc discharge, a method for efficiently capturing and removing electrically charged particles and neutral particles having no charge which are at most 5 &mgr;m in particle diameter is demanded. The electrically charged particles can be captured efficiently by installing an electric field filter in a transportation course of plasma. The electric field filter has a cylindrical structure which is uneven in inner wall shape. A voltage in the range of 10 to 90 V is applied to the electric field filter. The neutral filters can be captured efficiently by installing a neutral filter having an opening sectional area which is at most 40% of a sectional area of the transportation course.

Abstract: The present invention relates to a method and apparatus for producing electric arc plasma and for use thereof for deposition coatings on a substrate. Electric arc separated plasma is produced using electric arc discharge on a cold cathode by passing it through a curvilinear plasmaguide. Said plasma is created within the curvilinear plasmaguide and electric current is put through it in a longitudinal direction forming length-uniform magnetic field whereby allowing a high-quality coating to be deposited on the substrate using sputtering.

Abstract: A cathode arc source for depositing a coating on a substrate has an anode and a cathode station for a target, a first filter means comprising a filter duct having at least one bend, and first magnetic means for steering plasma through the filter duct for removal of macroparticles from the plasma. The apparatus comprises a second filter (10) for further removal of macroparticles from the plasma, made up of a baffle (11), an aperture (12) through which plasma can pass and second magnetic means (13) for steering plasma through the aperture. The aperture size may be less than 33% of the duct sectional area at that point. The source can also include an ion beam generator. Also described is a method of depositing coatings of ions using the second filter and closing the aperture in the filter when required.

Abstract: A process and apparatus for coating at least one workpiece utilizes a target made of an alloy which is substantially a one phase. Coating is achieved by cathodic arc evaporation of the target in an oxygen atmosphere.

Abstract: A vacuum arc coating process that can form a hard coating layer excellent in both bonding quality with the substrate and surface roughness, a coating machine for this process, and a revolving cutting tool produced by this process. Vacuum chamber 1 is provided with subchamber 3 that is less evacuatable than coating chamber 2. Arcing-type evaporation source 4 is placed in subchamber 3. A gas such as nitrogen gas is introduced into subchamber 3 from gas-introducing portion 6 when substrate 10 is cleaned before the deposition, so that the gas pressure is kept higher in subchamber 3 than in the vicinity of substrate 10. This condition suppresses the generation of molten particles when the cathode (the evaporating material) of arc evaporation source 4 is melted and ionized, without reducing the sputtering effect. A revolving cutting tool thus obtained has a small magnitude of surface roughness.

Abstract: An arc evaporator comprises: an anode; an evaporation source electrode as a cathode; and a current control unit for supplying an AC square wave arcing current across the anode and the evaporation source electrode.

Abstract: The invention relates to an arc source or a source for vaporizing or sputtering of materials and a method for operating a source. The source comprises an insulated counter-electrode and/or an AC magnet system. Thereby, dependent on the requirement, any desired potential can be applied to the counter-electrode and/or the source can be operated with different magnet systems, in particular as arc or sputter source.

Abstract: A plasma processing device include a plasma generation unit for generating plasma by using a cathodic arc discharge, first and second magnetic field ducts arranged in a row for transporting the plasma with one end of the row being connected to the plasma generation unit and a processing chamber connected to the other end of the row unit and having a stage for holding a substrate to be processed. A shutter is provided for covering the plasma during a period of a predetermined time after start of arc discharge or during a period of predetermined time before end of arc discharge. The shutter is disposed between the first magnetic field duct and the substrate to be processed, and is movable. The shutter is capable of being supplied with a voltage, and is kept in a state so as to be electrically insulated from the processing chamber.

Abstract: Deposition apparatus incorporating either a single or multiple filtered cathodic arc (FCA) source for depositing coatings such as tetrahedral amorphous carbon (TAC); metal oxides; compounds and alloys of such materials onto various types of substrates, such as metals semiconductors, plastics ceramics and glasses. Substrates are moved through the plasma beam(s) of the FCA source(s) and beam scanning increases deposition area. Macroparticles are filtered by a double bend filter duct.

Abstract: The invention relates to a device and method for coating substrates in a vacuum, wherein a plasma is to be generated from a target and ionized particles of the plasma are to be deposited on the substrate in the form of a layer, as has long been used in a very wide range of known PVD processes. The intention of the invention is to prevent droplets and particles from settling in the applied layer, which droplets and particles have an adverse effect on the properties of the layer, or at least to reduce the number of these droplets and particles. To solve this problem, an absorber electrode which is at an electrically positive potential is used, which electrode is a few mm away from the root of the plasma, and is arranged in front of or next to the plasma in such a way and is shaped in such a way that an electric field is formed around the absorber electrode. The electric field vector is to be oriented at least approximately orthogonally to the direction of movement of the ionized particles of the plasma.

Abstract: A vacuum arc plasma gun deposition system includes a cathode, several anode assemblies that define a plasma channel, a current source for causing electrical current to flow from the anode assemblies to the cathode, a mechanism for moving the anode axially to keep the active surface of the cathode substantially at a fixed position relative to the anode assemblies, mechanisms for moving the anode assemblies to keep the cross sectional size of the plasma channel substantially constant, a mechanism for cooling the cathode by conducting heat away from lateral surfaces of the cathode, and mechanisms for ensuring that a non-flat substrate is coated uniformly. The scope of the invention includes methods of making coated products by depositing coatings on substrates using this vacuum arc plasma gun deposition system, and the coated products so made.

Abstract: An apparatus for automatically cleaning a mask applied to a mask cleaning step after an evaporation process. An RF plasma is used to clean the mask. By isolating the RF plasma generator, the wafer table and the mask table from the grounded reaction chamber, the RF voltage is supplied to the wafer table and the mask table. The bias generated by the RF voltage during evaporation process can thus be reduced to enhance the efficiency of evaporation. After removing the wafer being performed with the evaporation process, the RF plasma can be used to clean the mask. The mask can thus be fixed on the mask table without being removed or renewing the mask table.

Abstract: An apparatus for flow-line treatment of articles has two chambers. The first chamber is a vacuum working chamber to treat articles in an artificial atmosphere. First transport means transport articles through the first chamber and at least one lock at the end of the chamber. Second transport means transport articles though the second chamber. The lock has a movable body with at least two cavities, installed inside an airtight shell. The movable body moves between a first position, in which one cavity connects with the first chamber and the first transport means extend into the cavity, and a second position, in which the cavity connects with the second chamber and the second transport means extend into the cavity. The at least two cavities are adjacent and similar and are provided with openings. Each cavity holds one carrier with articles. The first and second transport means provide simultaneous and antiparallel movement.

Abstract: A cathode arc source for depositing a coating on a substrate has an anode and a cathode station for a target, a first filter means comprising a filter duct having at least one bend, and first magnetic means for steering plasma through the filter duct for removal of macroparticles from the plasma. The apparatus comprises a second filter for further removal of macroparticles from the plasma, made up of a baffle, an aperture through which plasma can pass and second magnetic means for steering plasma through the aperture. The source can also include an ion beam generator. Also described is a method of depositing coatings of ions using the second filter and closing the aperture in the filter when required.

Abstract: The vacuum arc evaporation apparatus removes coarse particles from plasma containing cathode materials generated from a cathode 7 provided to a evaporation source 6 by a vacuum arc discharge, and is provided with a porous member 10 on the inside wall of a plasma duct equipped with means for forming deflection magnetic field having a magnetic coil 8 outside thereof so as to guide the plasma in the vicinity of a substrate 11 accommodated in the film forming chamber 1.

Abstract: A method and apparatus for depositing a ceramic film on a substrate by vacuum arc deposition, includes a vacuum chamber, a cathode comprised of an electrically conductive ceramic material to be deposited on a substrate, an electrically insulating member about the cathode, a heater for preheating the cathode to a predetermined temperature, an anode positioned downstream of the cathode and including an opening to allow ions of the ceramic material from the cathode to flow therethrough, a substrate support positioned downstream of the anode, and a plurality of magnetic members disposed around the vacuum chamber for guiding the ions from the cathode in a predetermined direction.

Abstract: An arc extinguishing circuit for use with glow discharges employed in manufacturing thin-film apparatus (such as, sputtering apparatus etc.), and is capable of more rapidly extinguishing arc discharges occurring within a glow discharge. The arc extinguishing circuit includes a voltage sense circuit, a secondary winding, a switch element, a positive output terminal, and a negative output terminal, the voltage sense circuit having a voltage sense capacitor and a primary winding. When the potential of the negative output terminal rapidly rises so that an arc discharge occurs while generating a glow discharge across the positive output terminal and the negative output terminal, a current flows from the voltage sense capacitor connected to the negative output terminal through the primary winding, and a voltage is induced at the secondary winding magnetically coupled to the primary winding and the switch element connected to the secondary winding conducts.

Abstract: A vacuum coating installation has at least a central distribution station which can be evacuated and has a transport arrangement driven in a controlled manner essentially along a plane, for the material to be treated. One operating station for the distribution station as well as at least two processing stations for the material to be treated are provided. The three or more stations communicate by way of operating openings with the distribution station, through which openings the material to be treated can be transported from one station into the other by the transport arrangement for the material to be treated. The material to be treated is formed by individual workpiece holders of the installation, each having a plurality of workpiece supports.

Abstract: An apparatus for cathodic arc coating. The apparatus includes: a vacuum chamber which includes: an anode; a power supply; and a cathode target assembly connected to the power supply. The cathode target assembly includes a cathode target having an interference fit stud with a threadless distal end. In the preferred embodiment, the distal end of the threadless cathode target also includes a pre-determined surface texture and a cooling block in contact with the cathode target.

Abstract: This invention discloses a cathodic arc deposition apparatus for depositing a layer of low-conductivity material on a surface of a substrate. The cathodic arc deposition apparatus includes a source contained in a vacuum chamber. The source further includes a target mount for mounting a target thereon wherein the target comprising fused mixture of powders of the low-conductivity material hot-pressed with powders of a high conductivity material functioning as conductivity-enhancement matrix. The cathodic arc deposition apparatus further includes an electric arc for striking the target to evaporate a plurality of ions of the low conductivity material and the high conductivity material. The cathodic arc deposition apparatus further includes an ion trajectory guiding means for guiding the ions for projecting to the substrate contained in the vacuum chamber.

Abstract: An apparatus for cathodic arc coating. The apparatus includes: a vacuum chamber which includes: an anode; a power supply; and a cathode target assembly connected to the power supply. The cathode target assembly includes a cathode target having an interference fit stud with a threadless distal end. In the preferred embodiment, the distal end of the threadless cathode target also includes a pre-determined surface texture and a cooling block in contact with the cathode target.

Abstract: A cathode arc source generates positive ions from a non-graphite target. The cathode arc source includes (a) a cathode station to receive the target; (b) a first magnet to generate a first magnetic field at the target; and (c) a second magnet to generate a second magnetic field at the target. The second magnetic field has a direction opposite to that of the first magnetic field so that the resultant magnetic field has a point of zero field strength above the target. In an embodiment, the first magnet is located below the target and includes a coil with a diameter greater than the diameter of the target. The second magnet is located above the target.

Abstract: An apparatus for cathodic arc coating is provided. The apparatus includes: a vacuum chamber which includes an anode; a power supply; and a cathode target connected to the power supply. The cathode target has a channeled back surface for improving heat transfer from the cathode target. In the preferred embodiment, the cathode target also includes a conductor segment connecting the cathode target to the power supply of the cathodic arc coating apparatus for conducting the increased current capacity of the cathode target and a cooling block in contact with the cathode target to further improve the heat transfer from the cathode target.

Abstract: The vacuum arc evaporation apparatus removes coarse particles from plasma containing cathode materials generated from a cathode 7 provided to a evaporation source 6 by a vacuum arc discharge, and is provided with a porous member 10 on the inside wall of a plasma duct equipped with means for forming deflection magnetic field having a magnetic coil 8 outside thereof so as to guide the plasma in the vicinity of a substrate 11 accommodated in the film forming chamber 1.

Abstract: An apparatus for applying permanent markings onto products using a Vacuum Arc Vapor Deposition (VAVD) marker by accelerating atoms or molecules from a vaporization source onto a substrate to form human and/or machine-readable part identification marking that can be detected optically or via a sensing device like x-ray, thermal imagining, ultrasound, magneto-optic, micro-power impulse radar, capacitance, or other similar sensing means. The apparatus includes a housing with a nozzle having a marking end. A chamber having an electrode, a vacuum port and a charge is located within the housing. The charge is activated by the electrode in a vacuum environment and deposited onto a substrate at the marking end of the nozzle. The apparatus may be a hand-held device or be disconnected from the handle and mounted to a robot or fixed station.

Abstract: A process and apparatus for depositing thin films and coatings using a vacuum arc plasma source having hot, non-consumable anode is described. Plasma and macroparticles of the cathode material are emitted from the cathode. Part of this material arrives at the hot refractory anode, where it is re-evaporated without macroparticle generation. Substrates exposed to the vapor flow from the anode, but shielded from a direct line of sight with the cathode, are coated with cathode material without macroparticle inclusions.

Abstract: An arc evaporator comprises: an anode; an evaporation source electrode as a cathode; and a current control unit for supplying an AC square wave arcing current across the anode and the evaporation source electrode.

Abstract: The invention relates to a vacuum arc evaporator with which a wide variety of substrates can be provided with various coatings or to which various systems of layers can be applied. The invention is intended to achieve an improvement in the quality of the layer, with increased material utilization and higher coating rate. A vacuum arc evaporator with a cathode of electrically conducting material and an anode for generating a plasma arranged in an evacuable housing is used for this purpose. The plasma is generated by an evaporation of the cathode material by means of arc discharge. The anode is enclosed by an insulator and is otherwise surrounded by cathode material on all sides.

Abstract: A linear magnetron cathode is disclosed which may be used as a vapor or plasma source for coating deposition or ion processing. The cathode has the shape of an elongated rectangular bar with vaporization of material occurring from an evaporable surface wrapping around the periphery of the bar, along two opposite sides and around both ends. A magnetic field is established over the entire evaporable surface which has a component parallel to the surface and perpendicular to the long direction of the cathode, forming a closed-loop magnetic tunnel around the periphery which directs an arc plasma discharge. Side shields adjacent to sand projecting outward from the sides of the evaporable surface block a significant fraction of the macroparticles ejected from reaching the substrate region. The invention provides uniform cathode erosion and a vaporized material stream in two directions over an extended length, permitting uniform deposition or implantation over large areas.

Abstract: A cathode arc source apparatus for depositing a coating on a substrate is provided with a monitor for monitoring the cathode arc source. The monitor is useful for monitoring position of an arc spot on the target, plasma emission by the source, or current through or potential difference at a secondary anode. A controller can take actions such as shutting down the source, varying the power or restriking the arc in response to output from the monitor.

Abstract: The invention relates to a device, in particular for a laser-induced vacuum are discharge evaporator for depositing of multiple layers with a high level of purity and high deposition rates on large-area components. According to the invention, the material source for the coating material is in a source chamber which can be evacuated and can be separated in a vacuum-tight manner from the actual coating chamber in which the substrate to be coated is located. The evaporator can, in particular, be used for deposition of amorphous carbon layers which are hydrogen-free and superhard and/or which contain hydrogen, in conjunction with high-purity metal layers or for the reactive plasma-enhanced deposition of, for example, oxidic, carbide, nitride hard material layers of ceramic layers or a combination thereof. The corresponding plasma sources can be flange-mounted on any suitable coating chambers and, consequently, also combined with conventional coating processes, for example magnetron sputtering.

Abstract: A novel high brightness point ion source (10) that is adapted to operate with liquid ionic compounds such as mixtures of molten salts, bases or acids. The ion source is basically comprised of two parts: the needle assembly (11) and the extraction assembly (12). The former consists of a point shaped needle (13) made of a refractory ceramic material, whose sharpened extremity is referred to as the tip (13a). The needle is partially lodged in a recess of an insulating support (15). A heating coil (14) made of stainless steel is tightly wound around a portion of the needle adjacent to the tip. The needle is coated with the mixture, for instance, by dipping in a crucible containing the mixture. The extraction assembly is comprised of a metal extracting electrode (20) provided with a central aperture that is screwed on a cylindrical metallic body (19), so that the spacing between the tip and the aperture center is adjustable.

Abstract: A coating of positive ions is applied to a substrate by generating an arc at a cathode, directing a beam of ions emitted from the cathode to the substrate via a filter path to remove macroparticles, igniting the arc by moving an arc ignition from a retracted position to an ignition position in which cathode contact is made, and storing the position in which arc ignition occurred.

Abstract: An arc vapor deposition source has a target plate to be vaporized. A central surface area of the plate, on a vaporization-surface-side thereof, consists of a material which, in comparison to a remaining portion material of the target plate, has a low secondary electron emission rate and a low surface energy. The central surface area is formed by a detachable cover. The target plate has a continuous recess in a central area thereof and an insert therein forms the surface area. The material of the central surface area consists of at least one of boron nitride, hexagonal boron nitride and/or TiN. The target plate is surrounded by a frame having a surface that consists of a material which compared to the material of the target plate, has a lower secondary electron emission rate and a low surface energy. The material of the frame being the same as that of the surface area and/or the frame surface consisting of at least one of boron nitride, hexagonal boron nitride and TiN.

Abstract: Apparatuses and methods for use in vacuum vapor deposition coating provide for simpler, economical and continuous operation. A system and method for continuously melting and evaporating a solid material for forming a coating vapor includes the use of a separate melting crucible and evaporating crucible. A system and method for energizing the evaporative solids to form a plasma which includes first and second electrodes and a device for selectively switching polarity between the first and second electrodes to avoid coating vapor deposition on the electrodes. Another a system and method for energizing the evaporative solids to form a plasma which includes an electric arc discharge apparatus with a cathodic and an anodic part. A continuously fed electrode is disclosed for continuous vaporization of electrode members in an electric arc discharge. An apparatus and method provides for measurement of the rate of evaporation from an evaporator and the degree of ionization in a vapor deposition coating system.

Abstract: A method and apparatus for vacuum arc deposition of carbon on a substrate inhibits or eliminates emission of contaminating carbon particles in the ion plasma by maintaining an elevated local plasma pressure at the cathode or target surface, thereby minimizing the role of heat conduction in the creation of the particles and strongly increasing the electron emission cooling effects.

Abstract: Apparatuses and methods for use in vacuum vapor deposition coating provide for simpler, economical and continuous operation. A system and method for continuously melting and evaporating a solid material for forming a coating vapor includes the use of a separate melting crucible and evaporating crucible. A system and method for energizing the evaporative solids to form a plasma which includes first and second electrodes and a device for selectively switching polarity between the first and second electrodes to avoid coating vapor deposition on the electrodes. Another a system and method for energizing the evaporative solids to form a plasma which includes an electric arc discharge apparatus with a cathodic and an anodic part. A continuously fed electrode is disclosed for continuous vaporization of electrode members in an electric arc discharge. An apparatus and method provides for measurement of the rate of evaporation from an evaporator and the degree of ionization in a vapor deposition coating system.

Abstract: A method and apparatus for forming polycrystalline particles by gas phase condensation employing arc plasma evaporation. The disclosed method and apparatus may be employed to form polycrystalline particles from high-melting temperature, low evaporation pressure materials such as transition metals. Arc discharge is sustained by the evaporated species, therefore, there is no need for a plasma sustaining gas. Evaporation may be sustained from either the cathode or anode. A reaction gas may be provided to form products with the evaporated species.

Abstract: Deposition apparatus incorporating either a single or multiple filtered cathodic arc (FCA) source for depositing coatings such as tetrahedral amorphous carbon (TAC); metal oxides; compounds and alloys of such materials onto various types of substrates, such as metals semiconductors, plastics ceramics and glasses. Substrates are moved through the plasma beam(s) of the FCA source(s) and beam scanning increases deposition area. Macroparticles are filtered by a double bend filter duct.

Abstract: An apparatus for applying material by cathodic arc vapor deposition to a substrate is provided which includes a vessel, a disk-shaped cathode, a platter for supporting the substrate, apparatus for maintaining a vacuum in the vessel, and apparatus for selectively sustaining an arc of electrical energy between the cathode and an anode. The disk-shaped cathode has a first end surface, a second end surface, and an evaporative surface extending between the first and second end surfaces, and the cathode is mounted on a pedestal positioned inside the vessel. The platter has a slot for receiving the pedestal, thereby enabling the platter to be movable into and out of the vessel.

Abstract: The invention concerns an apparatus for the plasma assisted physical vapor deposition of coatings onto workpieces and a cathode spot arc evaporator and the form of integration of the evaporator in the coating apparatus.

Abstract: An elongate emitter is used as a cathode to coat material onto a cylindrical workpiece by magnetron sputterinig. Where the inside surface of the workpiece is coated, the workpiece itself is used as the vacuum sputtering chamber. The overlap between the plasma field and the magnetic field creates a coating zone which is moved along the length of the workpiece to evenly coat the workpicce.