Abstract: The present disclosure generally relates to the field of tin electroplating. More specifically, the present disclosure relates to methods for mitigating tin whisker formation on tin-plated films and tin-plated surfaces by doping the tin with germanium.

Abstract: An object of the present invention is to provide an electroformed part favorable for an assembly part of a timepiece or the like and a timepiece using the same. The present invention relates to an electroformed part, which is an electroformed part composed of a nickel-iron alloy constituted by nickel, iron, and unavoidable impurities, containing iron at 5 to 25% by mass, and having a roughly layered form portion in which a stacked form portion having an inclined iron content in a thickness direction is repeatedly stacked a plurality of times. It is preferred that the stacked portion is constituted by crystal grains having an average grain diameter of 50 nm or less.

Abstract: A method for repairing a through-hole includes inserting a repair coil, comprising a tightly-wound repair strip, into a through-hole and inserting a heating element into the repair coil. Passing an electrical current through the heating element liquefies a bonding material disposed on the repair coil and the repair coil expands within the through-hole. Subsequently solidifying the bonding material bonds the repair coil to the through-hole. A repair assembly comprises a repair coil inserted into a through-hole and a heating element inserted into the repair coil. The repair coil comprises a tightly-wound repair strip. The heating element comprises a segment of a heating wire enclosed within an insulating material. Passing an electric current through the segment of the heating wire liquefies bonding material disposed on the repair coil and the repair coil expands within the through-hole. The liquified bonding material solidifies to bond the repair coil to the through-hole.

Abstract: A method for growing nanotubes via flow-regulated microfluidic electrochemical anodization, includes providing a microfluidic device having a fluid inlet; a fluid outlet; and a fluidic microchannel connecting the fluid inlet and outlet, wherein the microchannel includes a Pt cathode and a Ti anode separated by an electrical insulator; providing an electrolyte fluid flow through the microchannel; and providing an electrical current across the anode and cathode sufficient to cause electrochemical anodization growth of TiO2 nanotubes in the microchannel on a surface of the anode.

Abstract: A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive:the suppressor additive:the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.

Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

Abstract: An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure.

Abstract: A three-dimensional porous composite structure comprises a porous structure and at least one carbon nanotube structure. The porous structure has a plurality of metal ligaments and a plurality of pores. The at least one carbon nanotube structure is embedded in the porous structure and comprising a plurality of carbon nanotubes joined end to end by van der Waals attractive force, wherein the plurality of carbon nanotubes are arranged along a same direction.

Abstract: Various embodiments herein relate to methods and apparatus for electroplating metal onto substrates. In various cases, a reference electrode may be modified to promote improved electroplating results. The modifications may relate to one or more of the reference electrode's shape, position, relative conductivity compared to the electrolyte, or other design feature. In some particular examples the reference electrode may be dynamically changeable, for example having a changeable shape and/or position. In a particular example the reference electrode may be made of multiple segments. The techniques described herein may be combined as desired for individual applications.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes: a substrate comprising a recess portion filled with a conductive material; a conductive trace overlying and contacting the conductive material; a conductive pillar disposed on the conductive trace and over the recess portion of the substrate; and a semiconductor chip disposed on the conductive pillar.

Abstract: Ionic liquid aluminum electroplating solutions are provided. The ionic liquid aluminum electroplating solution comprises an ionic liquid, an aluminum salt, and an effective amount of propylene carbonate. Methods for producing an aluminum coating on a substrate are also provided. Processes for electroplating aluminum or an aluminum alloy from an ionic liquid aluminum electroplating solution are also provided.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes: a substrate comprising a recess portion filled with a conductive material; a conductive trace overlying and contacting the conductive material; a conductive pillar disposed on the conductive trace and over the recess portion of the substrate; and a semiconductor chip disposed on the conductive pillar, wherein the conductive trace comprises a width WT and a thickness TT, the recess portion of the substrate comprises a width WR in the width direction of the conductive trace and a depth DR, and the ratio of WR to WT ranges from about 0.25 to about 1.8 and the ratio of DR to TT ranges from about 0.1 to about 3.

Abstract: There is provided a method of well filling copper in a conductivity-rendered non-through hole having an aspect ratio (depth/hole diameter) of 5 or more on a substrate in a short period of time, and the method comprises using an acidic copper plating bath comprising a water-soluble copper salt, sulfuric acid, chlorine ion, a brightener and a copolymer of diallylamines and sulfur dioxide and filling copper in the non-through hole by periodic current reversal copper plating.

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract: A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves the use of underpotential deposition of a first element to mediate the growth of a second material by overpotential deposition. Deposition occurs between a potential positive to the bulk deposition potential for the mediating element where a full monolayer of mediating element forms, and a potential which is less than, or only slightly greater than, the bulk deposition potential of the material to be deposited. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis. This process is especially suitable for the formation of a catalytically active layer on core-shell particles for use in energy conversion devices such as fuel cells.

Abstract: A foraminous microstructure or film that has photonic or plasmonic properties is made by forming a structure or film composed of at least two constituent materials so that the compositional ratio of the constituent materials varies in a depth direction of the structure, and then removing one of the materials from the structure.

Abstract: Variable property deposit, at least partially of fine-grained metallic material, optionally containing solid particulates dispersed therein, is disclosed. The electrodeposition conditions in a single plating cell are suitably adjusted to once or repeatedly vary at least one property in the deposit direction. In one embodiment denoted multidimension grading, property variation along the length and/or width of the deposit is also provided. Variable property metallic material deposits containing at least in part a fine-grained microstructure and variable property in the deposit direction and optionally multidimensionally, provide superior overall mechanical properties compared to monolithic fine-grained (average grain size: 2 nm-5 micron), entirely coarse-grained (average grain size: >20 micron) or entirely amorphous metallic material deposits.

Abstract: Methods for depositing a metal or metal alloy on a substrate and articles made with the methods are described. The metal or metal alloy is deposited on the substrate electrolytically. The current is periodically interrupted during deposition to improve throwing power and reduce nodule formation on the metal or metal alloy deposit.

Abstract: A method and apparatus for controlling and changing the composition of a cadmium zinc telluride (CZT) transition layer as it is formed over a partially completed photovoltaic device using electrochemical deposition (ECD) where plating variables are systematically changed while the CZT transition layer is formed to change the composition of the plated CZT transition layer.

Abstract: A method for electroplating a wafer detects plating bath failure based on a voltage change. The method is useful in plating wafers having TSV features. Voltage of each anode of a plating processor may be monitored. An abrupt drop in voltage signals a bath failure resulting from conversion of an accelerator such as SPS to it's by products MPS. Bath failure is delayed or avoided by current pulsing or current ramping. An improved plating bath has a catholyte with a very low acid concentration.

Abstract: Disclosed is an electroplating method for filling cavities, through holes, blind holes, or micro blind holes of a work piece with metals. According to said method, the work piece containing cavities, through holes, blind holes, or micro blind holes is brought in contact with a metal deposition electrolyte, and a voltage is applied between the work piece and at least one anode such that a current flow is fed to the work piece. The invention method is characterized in that the electrolyte encompasses a redox system.

Abstract: This is a process to generate alternating current without an external source for cell-houses in electrowinning or electrorefining of copper or other products in which the electric source consists of a conventional rectifier-transformer group that supplies continuous electrical current to the cell-house, which is connected in parallel to a device characterized by having the capacity to extract an electrical current from the cell-house for a period of time and then return it in another period of time, whether periodically or semiperiodically and without changing the average value of the electrical current, supplied to the cell-house by the rectifier-transformer. This results in a electrical current in the cell-house that is the superimposition of a continuous and alternating current. This process is designed to overcome the barrier of electric potential produced by the presence of the pure continuous electric field in cell-houses through the electric agitation of an ion-rich electrolyte.

Abstract: A method for depositing nickel-metal layers for colouring surfaces, and a bath for depositing such a layer. This is made possible by depositing a nickel-metal layer from a bath for the electroless deposition of nickel which contains at least one further metal compound, a voltage being additionally applied enable the metal of the metal compound to be incorporated while forming a nickel-metal layer.

Abstract: A method for providing a structure in a magnetic recording transducer is described. The method includes plating a first layer in a plating bath using a first plurality of plating conditions. The first layer has a first galvanic potential. The method also includes modifying the plating bath and/or the first plurality of plating conditions to provide a modified plating bath and/or a second plurality of plating conditions. The method further includes plating a second layer using the modified plating bath and/or the second plurality of plating conditions. The second layer has a second galvanic potential. The first galvanic potential is between the second galvanic potential and a third galvanic potential of a third layer if the third layer adjoins the first layer. The second galvanic potential is between the first galvanic potential and the third galvanic potential of the third layer if the third layer adjoins the second layer.

Abstract: Electrochemical cells including a casing or cup for direct electrical contact with a negative electrode or counter electrode and serving as the current collector for the electrode. The casing includes a substrate having a plated coating of an alloy including copper, tin and zinc, the coating having a composition gradient between the substrate and the external surface of the coating wherein the copper content is greater adjacent the substrate than at the external surface of the coating and the tin content is greater at the external surface of the coating than adjacent the substrate. Methods for forming a coated casing and an electrochemical cell including a coated casing are disclosed, preferably including providing an electrode casing with a coating utilizing variable current density plating that reduces discoloration of a surface exposed to the ambient atmosphere.

Abstract: A method may include the steps of supplying current to the electrodes of an electrochemical cell according to a first charging profile, wherein the electrochemical cell has an anode, cathode, and electrolytic solution; maintaining a generally constant current between the electrodes; exposing the cell to an external field either during or after the termination of the deposition of deuterium absorbing metal on the cathode; and supplying current to the electrodes according to a second charging profile during the exposure of the cell to the external field. The electrolytic solution may include a metallic salt including palladium, and a supporting electrolyte, each dissolved in heavy water. The cathode may comprise a second metal that does not substantially absorb deuterium, such as gold. The external field may be a magnetic field.

Abstract: Disclosed are embodiments of an electroplating system and an associated electroplating method that allow for depositing of metal alloys with a uniform plate thickness and with the means to alter dynamically the alloy composition. Specifically, by using multiple anodes, each with different types of soluble metals, the system and method avoid the need for periodic plating bath replacement and also allow the ratio of metals within the deposited alloy to be selectively varied by applying different voltages to the different metals. The system and method further avoids the uneven current density and potential distribution and, thus, the non-uniform plating thicknesses exhibited by prior art methods by selectively varying the shape and placement of the anodes within the plating bath. Additionally, the system and method allows for fine tuning of the plating thickness by using electrically insulating selectively placed prescribed baffles.

Abstract: Compositions and methods for depositing gold alloys are disclosed. The compositions include certain dithiocarboxylic acids, salts and esters thereof and mercapto group containing compounds which provide bright gold alloy deposits with uniform color.

Abstract: Disclosed herein is an electric Al or Al alloy plating bath which comprises (A) an aluminum halide; (B) one kind of compound or at least two kinds of compounds selected from the group consisting of N-alkylpyridinium halides, N-alkylimidazolium halides, N,N?-alkylimidazolium halides, N-alkyl-pyrazolium halides, N,N?-alkylpyrazolium halides, N-alkylpyrrolidinium halides and N,N-alkyl-pyrrolidinium halides; and (C) a high boiling point aromatic hydrocarbon solvent, wherein the molar ratio of the aluminum halide (A) to the compound (B) ranges from 1:1 to 3:1 and the flash point of the plating bath is not less than 50° C. The plating bath never involves any risk of causing an explosion, can be handled industrially with safety and can provide a smooth and fine Al of Al alloy plated film.

Abstract: An apparatus and method is disclosed for simultaneously electroplating at least two parts in a series electrical configuration in an electroplating system using a shared electrolyte with excellent consistency in thickness profiles, coating weights and coating microstructure. Parts in high volume and at low capital and operating cost are produced as coatings or in free-standing form.

Abstract: Electrochemical cells including a casing or cup for direct electrical contact with a negative electrode or counter electrode and serving as the current collector for the electrode. The casing includes a substrate having a plated coating of an alloy including copper, tin and zinc, the coating having a composition gradient between the substrate and the external surface of the coating wherein the copper content is greater adjacent the substrate than at the external surface of the coating and the tin content is greater at the external surface of the coating than adjacent the substrate. Methods for forming a coated casing and an electrochemical cell including a coated casing are disclosed, preferably including providing an electrode casing with a coating utilizing variable current density plating that reduces discoloration of a surface exposed to the ambient atmosphere.

Abstract: By providing two or more consumable electrodes within a single reactor vessel, an alloy having a high degree of chemical ordering may be deposited in situ in that the current flows of the individual consumable electrodes are controlled to obtain a substantially layered deposition of the two or more metals. Hence, especially in copper-based metallization layers, the advantage of enhanced resistance against electromigration offered by alloys may be achieved without unduly reducing the overall conductivity.

Abstract: This invention discloses a process of the electro-winning of metals, in particular copper, is done in a strongly acidic aqueous solution (˜180 gpl H2SO4), with permanent cathodes of stainless steel or Cu starting sheets, and Pb—Ca—Sn anodes, in tradition electrolysis cells to obtain copper cathodes wherein in the electrolytic cells, a sinusoidal current is super-imposed over the continuous current in order to produce high-purity electrolytic copper. This invention also discloses the electro-refining process of metals, in particular copper, is done in a strongly acidic aqueous solution (˜180 gpl H2SO4), with permanent cathodes of stainless steel or Cu starting sheets, and anodes of impure copper from founding, in traditional electrolysis cells in order to obtain copper cathodes wherein in the electrolytic cells, a sinusoidal current is super-imposed over the continuous current in order to produce high-purity electrolytic copper.

Abstract: Electrochemical plating (ECP) apparatuses with auxiliary cathodes to create uniform electric flux density. An ECP apparatus for electrochemical deposition includes an electrochemical cell with an electrolyte bath for electrochemically depositing a metal on a substrate. A main cathode and an anode are disposed in the electrolyte bath to provide a main electrical field. A substrate holder assembly holds a semiconductor wafer connecting the cathode. An auxiliary cathode is disposed outside the electrochemical cell to provide an auxiliary electrical field such that a flux line density at the center region of the substrate holder assembly substantially equals that at the circumference of the substrate holder assembly.

Abstract: In a method for production of a corrosion resistant and/or oxidation resistant coating, at least one metal of the platinum group or an alloy thereof is galvanically deposited onto a surface of a substrate, and thereafter the thusly galvanically coated substrate is aluminized. In a first stage of the galvanic deposition process a current magnitude applied for the galvanizing is increased continuously or step-wise beginning from an initial value up to a maximum value, and in a second stage of the galvanic deposition process the current magnitude applied for the galvanizing is maintained constant at the maximum value. The galvanic deposition of the or each metal of the platinum group or the corresponding alloy may be carried out using an open-celled or open-mesh or porous anode.

Abstract: Electrodeposition baths, systems and methods are provided. In some embodiments, the baths, systems and methods are used to deposit metal alloy coatings.

Abstract: The present invention relates to a method for depositing an adherent zinc coating onto a zinc-containing magnesium alloy substrate in order to render the surface suitable for electroplating. The coatings are applied from a pyrophosphate-based zinc electrolyte solution containing a small quantity of fluoride ions. Depending on the zinc and aluminum content of the magnesium alloy, the zinc electrolyte solution is applied by immersion deposition or electrolytically.

Abstract: Techniques for fabricating carbon nanotubes aligned on a tip are provided. In one embodiment, a method for fabricating carbon nanotubes aligned on a tip includes forming nanostructures on the tip, and aligning the nanostructures on the tip using a fluid flowing on the tip.

Abstract: The invention relates to an electrolyte for the electrodeposition of aluminium from aprotic solvents containing a compound of the formula: N(R1)4X.(m-n-o)Al(C2H5)3.nAlR23oAlR33, wherein R1 is a C1 to C4 alkyl group, X is F, Cl or Br, m is equal to 1 to 3, preferably 1.7 to 2.3, n is equal to 0.0 to 1.5, preferably 0.0 to 0.6, o is equal to 0.0 to 1.5, preferably 0.0 to 0.6, R2, R3 is a C1 or C3 to C6 alkyl group, wherein R2 is unequal to R3, in an organic solvent. A further object of the invention is a method for producing the electrolyte, a method for coating and the coated material parts.

Abstract: A method for multi-layer electrodeposition in a single bath is also provided. A substrate is immersed in a bath. An electrodeposition operation is initiated for depositing a first layer of material on the substrate. The electrodeposition operation includes agitating the bath and applying current pulses. The electrodeposition operation is later altered for depositing a second layer of material on the first layer, where the second layer is of a different composition than the first layer. In the altered mode, the current density is changed for altering a composition of material deposited on the substrate, the duration and/or frequency of the current pulses are altered, and the bath is agitated at a different rate of agitation.

Abstract: Compositions and methods for depositing gold alloys are disclosed. The compositions include certain dithiocarboxylic acids, salts and esters thereof and mercapto group containing compounds which provide bright gold alloy deposits with uniform color.

Abstract: A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.

Abstract: A method for reducing whisker formation and preserving solderability in tin coatings over metal features of electronic components. The tin coating has internal tensile stress and is between about 0.5 m and about 4.0 m in thickness. There is a nickel-based layer under the tin coating.

Abstract: A copper electroplating bath composition and a method of copper electroplating to improve gapfill are provided. The method of electroplating includes providing an aqueous electroplating composition, comprising copper, at least one acid, at least one halogen ion, an additive including an accelerating agent, a suppressing agent, and a suppressing-accelerating agent, and the solution and mixture products thereof; contacting a substrate with the plating composition; and impressing a multi-step waveform potential upon the substrate, wherein the multi-step waveform potential includes an entry step, wherein the entry step includes a first sub-step applying a first current and a second sub-step applying second current, the second current being greater than the first current. The accelerating agent is provided in concentration of greater than 1.

Abstract: A method of manufacturing a stamper for an optical information recording medium includes the steps of: preparing a mother stamper having a surface layer in which a grooved pattern is formed; forming a conductive layer on the mother stamper; and forming a nickel layer on the conductive layer by electroplating the mother stamper in a plating solution consisting mainly of nickel sulfamate. In this method, during the process of forming the nickel layer, a current density is varied in at least two cycles, of which each cycle includes to increase, to maintain, and to decrease the current density sequentially in this order.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: Methods and apparatus are provided for processing semiconductor wafers sequentially. Sequential processes employ multi-station processing modules, where particular encompassing wafer processes are divided into sub-processes, each optimized for increasing wafer to wafer uniformity, result quality, and overall wafer throughput. In one example, a copper electroplating module includes separate stations for wetting, initiation, seed layer repair, fill, overburden, reclaim, and rinse.

Abstract: A composition for electrodeposition of a metal on a work piece, which electrodeposition is conducted at an electrodeposition temperature, is provided. The composition comprises a metal salt, a polymer suppressor having a cloud point, an accelerator and an electrolyte. If the cloud point is greater than the electrodeposition temperature, an anion is also present in an amount sufficient to lower the cloud point of the polymer suppressor to a temperature approximately no greater than the electrodeposition temperature.

Abstract: A conductive material is electroplated onto a platable resistive metal barrier layer(s) employing a plating bath optionally comprising a super filling additive and a suppressor, and by changing the current or voltage as a function of the area of plated metal. A structure is also provided that comprises a substrate, a platable metal barrier layer(s) located on the substrate and a relatively continuous uniform electroplated layer of a conductive material located on the platable resistive metal barrier layer.

Abstract: A contact is disposed to come into contact with a metal layer formed on a substrate being treated, the contact being in contact with a surface being treated from an opposite surface through a through hole present in a substrate. Alternatively, a contact is disposed to come into contact with a metal layer formed on a substrate, the contact coming into contact at an approximate center of the substrate. Alternatively, a plurality of needle bodies are disposed to be in electrical contact with a metal layer of a substrate being treated, thereby power supply for electrolytic polishing/plating to a substrate being treated being implemented, without restricting to a periphery of a substrate, from a plurality of points on a surface thereof. Due to any one of these, liquid treatment equipment enables to improve uniformity in plane of an electric current sent to a surface being treated and of liquid treatment.