Abstract: The present invention discloses an electrolytic apparatus comprising: an electrolytic bath in which an anode (I) of a silver electrode-a cathode (II) of an inert electrode-an anode (III) of an inert electrode are arranged in this order in parallel to one another, and an electrode pair of the anode (I)-the cathode (II) and an electrode pair of the cathode (II)-the anode (III) have an electrical circuit configured to apply a potential of 2.07 V or more to the electrode pair of the cathode (II)-the anode (III) to supply electrolytic current, when independently supplying the electrolytic current; an electrolytic raw water supply pipe configured to supply electrolytic raw water into the electrolytic bath; and an electrolyzed water extraction pipe configured to extract the electrolyzed water in the electrolytic bath to the outside.

Abstract: A method for the preparation of materials comprises the steps of: a) taking a first material comprising a compound of a first metal or of a first metal alloy, b) inserting said first material into an electrochemical cell as a first electrode, the electrochemical cell including a second electrode including a second metal different from a metal incorporated in the first material and an electrolyte adapted to transport the second metal to the first electrode and insert it into the first material by a current flowing in an external circuit resulting in the formation of a compound of the second metal in the first electrode material, the method being characterized by the step of treating the first electrode material after formation of the compound of the second metal to chemically remove at least some of the compound of the second metal to leave a material with a nanoporous structure.

Abstract: A method for forming a quaternary alloy film of Co—W—P—Au for use as a diffusion barrier layer on a copper interconnect in a semiconductor structure and devices formed incorporating such film are disclosed. In the method, a substrate that has copper conductive regions on top is first pre-treated by two separate pre-treatment steps. In the first step, the substrate is immersed in a H2SO4 rinsing solution and next in a solution containing palladium ions for a length of time sufficient for the ions to deposit on the surface of the copper conductive regions. The substrate is then immersed in a solution that contains at least 15 gr/l sodium citrate or EDTA for removing excess palladium ions from the surface of the copper conductive regions.

Abstract: A dimethylamine silver bromide complex is used as a single source precursor for nucleation of silver bromide crystals.

Abstract: A dimethylamine silver chloro-iodide complex is used as a single source precursor for iodide incorporation in silver chloride crystals.

Abstract: A dimeitylarnine silver bromo-iodide complex is used as a single source precursor for iodide incorporation in silver bromide crystals.

Abstract: A dimethylamine silver chloride complex is used as a single source precursor for nucleation of silver chloride crystals.

Abstract: The cell controller 18 responds to a number of specific conditions including a flow switch 24 output signal 34 which indicates that fresh solution flows from a reservoir 14 into the metal solution tank 12. The cell will be caused to operate in the plating mode in response to the detection of fresh solution flow, and cell performance can be monitored by comparing an estimate of metal released into the solution based on flow of fresh solution and a measurement of metal recovered. The invention is particularly advantageous for controlling the electrolytic recovery of silver from photographic processing solution.