To Adjust Voltage Across Or Size Of Tool-workpiece Gap Patents (Class 205/642)
  • Patent number: 10876216
    Abstract: A stainless steel suspension component such as a mount plate is chemically activated by exposure to an activating solution. Gold is then spot plated onto the mount plate in the activated area using an elastomeric mask that is clamped over the mount plate. A component may then be bonded to the gold bond pads. The component may include a PZT microactuator bonded to the gold bond pads using a conductive adhesive such as silver epoxy. The gold acts as an interface metal that provides to a low resistance and environmentally robust ground path for the microactuator.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: December 29, 2020
    Assignee: Magnecomp Corporation
    Inventors: Marcos Lazatin, Brett Holaway
  • Patent number: 10682715
    Abstract: A method for electroerosion machining includes providing an electrode assembly comprising an electrode body having a tube-shaped body that defines a hollow interior and one or more inserts affixed to the electrode body to form a cutting surface on the electrode assembly, positioning the electrode assembly adjacent a workpiece to be machined, and providing power to the electrode assembly so as to energize the electrode assembly, with the electrode assembly and the workpiece being at opposite electrical polarities. The method also includes advancing the electrode assembly through the workpiece, with a working gap being maintained between the inserts and the workpiece across which a pulse electric current is passed to remove material from the workpiece, wherein, upon advancing the electrode assembly through the workpiece, a core is formed that is completely separated from a remainder of the workpiece and is contained within the hollow interior of the electrode body.
    Type: Grant
    Filed: May 28, 2015
    Date of Patent: June 16, 2020
    Assignee: General Electric Company
    Inventors: Yuanfeng Luo, Steven Robert Hayashi, Andrew Lee Trimmer, Dale Robert Lombardo, John Anthony Vogel
  • Publication number: 20150114844
    Abstract: Disclosed is a method for the electrochemical machining of a workpiece, in which at least one electrode is situated adjacent to a surface to be machined and current pulses are generated in pulsed operation to ablate material from the workpiece. Before and/or at the beginning and/or during the electrochemical ablation, data of the current pulses are registered and analyzed to identify a starting phase or a transient phase comparable to a starting phase and/or to regulate the spacing of the electrode to the surface to be machined and/or the current flow during a starting phase or a transient phase comparable to a starting phase.
    Type: Application
    Filed: October 20, 2014
    Publication date: April 30, 2015
    Inventors: Dirk RUHLIG, Markus BOXHAMMER
  • Patent number: 8372252
    Abstract: In a method for setting the distance between an electrode and a workpiece in electrochemical metal working, the electrode is moved by an oscillating drive system, in which an acceleration signal of the oscillating drive system is picked up, the acceleration signal is divided into individual sections, characteristic magnitudes of the individual sections of the acceleration signal are determined, the characteristic magnitudes of the individual sections are compared to one another and the distance of the electrode from the workpiece is adjusted in response to a deviation of the characteristic magnitudes from the specified values. A device for carrying out the method includes an electrode, that is connected to a drive axis, an oscillating motion being able to be transferred to the electrode via the drive axis. A sensor is situated on the drive axis which picks up acceleration signals.
    Type: Grant
    Filed: September 6, 2007
    Date of Patent: February 12, 2013
    Assignee: Robert Bosch GmbH
    Inventors: Herbert Gruhn, Norman Krings, Juergen Hackenberg, Alexander Reitzle
  • Publication number: 20120141816
    Abstract: The invention is related to the field of pulsed electrochemical machining of steels and alloys and can be used for performing various precision copying and piercing operations for manufacturing intricate profile surfaces of machine and tool workpieces made of hard-to-machine materials. The method comprises the steps of applying microsecond current pulse packages synchronized with an instant when the machining electrode and a workpiece are moved to a minimum distance towards each other, measuring at least one concordant voltage and current value in each pulse, calculating corresponding values of an interelectrode gap resistance, and adjusting the machining process in accordance with the changes of the interelectrode gap resistance.
    Type: Application
    Filed: April 29, 2011
    Publication date: June 7, 2012
    Applicant: PECM INDUSTRIAL, LLC
    Inventors: Timur Rashitovich IDRISOV, Vyacheslav Alexandrovich ZAYTSEV
  • Patent number: 8052860
    Abstract: A method and system are provided for the shaping and polishing of the surface of a material selected from the group consisting of electrically semi-conductive materials and conductive materials. An electrically non-conductive polishing lap incorporates a conductive electrode such that, when the polishing lap is placed on the material's surface, the electrode is placed in spaced-apart juxtaposition with respect to the material's surface. A liquid electrolyte is disposed between the material's surface and the electrode. The electrolyte has an electrochemical stability constant such that cathodic material deposition on the electrode is not supported when a current flows through the electrode, the electrolyte and the material. As the polishing lap and the material surface experience relative movement, current flows through the electrode based on (i) adherence to Faraday's Law, and (ii) a pre-processing profile of the surface and a desired post-processing profile of the surface.
    Type: Grant
    Filed: December 14, 2007
    Date of Patent: November 8, 2011
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Darell E. Engelhaupt, Mikhail V. Gubarev, William David Jones, Brian D. Ramsey, Carl M. Benson
  • Publication number: 20110210005
    Abstract: Device and method suitable for the electrochemical processing of an object. The device is provided at least with a chamber for accommodating an electrolyte, means for supporting the object to be processed in this chamber, electrodes arranged in this chamber, and control means for applying an electric current between the object to be processed and the electrodes.
    Type: Application
    Filed: August 17, 2009
    Publication date: September 1, 2011
    Applicant: ELSYCA N.V.
    Inventors: Bart Juul Wilhelmina Van Den Bossche, Gert Arnold Antoon Nelissen, Johan Maria Deconinck, Hubertus Martinus Maria Cuppens
  • Patent number: 7950149
    Abstract: The present invention provides panels for a microchannel heat exchanger core wherein the panels may have greater than about 36 fins per inch of the panel. The microchannels of the panels may have an aspect ratio of at least about 10. Panels are also provided having microchannels and fins on one side of the panel or on opposite sides of the panel. Methods are also provided for machining the panels of the present invention.
    Type: Grant
    Filed: August 27, 2009
    Date of Patent: May 31, 2011
    Assignee: Honeywell International, Inc.
    Inventor: Ilan Golecki
  • Patent number: 7871503
    Abstract: An electrochemical discharge machining device includes a base, a sensor disposed on the base, a shaft rotatably disposed on the base, an electrode disposed at one end of the shaft and contacting with a work piece, an isolating element disposed between the sensor and the shaft, and a control module connected to the sensor. Current flows to the electrode via the shaft to machine the work piece, and the force exerted on the electrode by the work piece is transmitted via the shaft and the isolating element to the sensor converting the force into a signal sent to the control module for raising or lowering the base to maintain contact between the electrode and the work piece. The sensor serves as a detecting mechanism to ensure appropriate contact between the electrode and the work piece.
    Type: Grant
    Filed: April 2, 2007
    Date of Patent: January 18, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Chao-Chuang Mai, Chin-Hui Chen, Ming-Ji Chen, Der-Shuen Chen
  • Patent number: 7850831
    Abstract: An electrochemical machining apparatus and method for machining a workpiece (60). The apparatus provides a pulse of electric power, which is conducted from the workpiece (60), to an electrolyte (68) flowing through a gap (62), and then to an electrode (58). Material is eroded from the workpiece (60) when the pulse of electric power is applied, thus machining the workpiece (60). The apparatus includes a power supply (12) to supply the electric power and a switching portion (40) for producing the pulse by switching the electric power ON and OFF. The switching portion (40) is capable of producing a pulse of electric power with a pulse duration of about 2 microseconds and a current of at least about 2800 amperes.
    Type: Grant
    Filed: October 30, 2006
    Date of Patent: December 14, 2010
    Assignee: Federal Mogul World Wide, Inc.
    Inventor: Yuefeng Luo
  • Patent number: 7727375
    Abstract: A method and an arrangement (1) for determining an actual value of the gap (4) between the work piece (2) and the electrode (3) during a process of electrochemical machining. According to the invention first process control means (30) are arranged to supply a set of machining current pulses (Im) to the electrode and the work piece. Second process control means (32) are arranged to perform a measurement of an operational parameter (U) representing a value of the gap (4) in real time under operational conditions. The second process control means (32) comprise means to determine the actual value of the gap (55a) based on the measurement of the operational parameter and logical unit (55b) to actuate the positioning means (8) to translate the electrode (3) in case the measured value of the gap deviates from the preset value of the gap.
    Type: Grant
    Filed: April 25, 2003
    Date of Patent: June 1, 2010
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Alexandr Nikolaevich Zajcev, Igor Leonidovich Agafonov, Rafail Ramzisovich Muchutdinov, Nasich Zijatdinovich Gimaev, Viktor Nikolaevich Kucenko, Aleksandr Leonidovich Belogorsky
  • Patent number: 7628905
    Abstract: Method and apparatus for process control of electro-processes. The method includes electro-processing a wafer by the application of two or more biases and determining an amount of charge removed as a result of each bias, separately. In one embodiment, an endpoint is determined for each bias when the amount of charge removed for a bias substantially equals a respective target charge calculated for the bias.
    Type: Grant
    Filed: June 27, 2006
    Date of Patent: December 8, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Antoine P. Manens, Alain Duboust, Siew S. Neo, Liang-Yuh Chen
  • Publication number: 20090061617
    Abstract: A method and apparatus for the removal of a deposited conductive layer along an edge of a substrate using a power ring configured to electro polish an edge of the substrate are provided. The electro polishing of the substrate edge may occur simultaneously with the electrochemical mechanical processing of a substrate face. In certain embodiments a method of electrochemically polishing a substrate having a conductive material disposed thereon is provided. A substrate is coupled with a carrier head comprising a power ring which surrounds an edge of the substrate, wherein the edge of the substrate includes the conductive material. A polishing pad is contacted with a face of the substrate. A first voltage is applied to the power ring to remove conductive material from the edge of the substrate. A second voltage different from the first voltage is applied to the polishing pad to remove a portion of the conductive material from the face of the substrate.
    Type: Application
    Filed: September 4, 2007
    Publication date: March 5, 2009
    Inventors: Alain Duboust, Jose Salas-Vernis, Antoine P. Manens
  • Publication number: 20080099343
    Abstract: An electrochemical machining system and method includes at least one tube arranged in a first fixture, a second fixture arranged adjacent to the first fixture, the second fixture adapted for supporting a workpiece relative to the tube, a translation mechanism which causes relative movement between the first fixture and the second fixture, a power supply which supplies a current to the workpiece and the tube, and a control unit which controls the power supply to alternately apply a forward current and a zero current (C0) to the workpiece and the tube for a total time interval (tt) wherein deplation of the workpiece occurs and bubbles are separated from the tube. This may be followed by a reverse current (CR) or voltage to the workpiece and the tube for a second time interval (tR), wherein deplation of the workpiece occurs.
    Type: Application
    Filed: October 31, 2006
    Publication date: May 1, 2008
    Inventors: Thomas William Brew, Nitin Das
  • Patent number: 7303462
    Abstract: A method and apparatus for the removal of a deposited conductive layer along an edge of a substrate using an electrode configured to electro polish a substrate edge are disclosed. The electro polishing of the substrate edge may occur simultaneously during electrochemical mechanical processing (Ecmp) of a substrate face. In one embodiment, a power source applies a bias between the substrate and at least two electrodes. The electrodes form a first electrode zone proximate the substrate edge at a sufficient potential to electro polish the substrate edge, thereby removing the conductive layer from the substrate edge. A second electrode zone with a lower potential than the first electrode zone is aligned proximate the substrate face during processing to enable Ecmp of the substrate face.
    Type: Grant
    Filed: March 22, 2005
    Date of Patent: December 4, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Alain Duboust, Antoine P. Manens, Liang-Yuh Chen
  • Patent number: 7144298
    Abstract: The object of the invention is to provide a method of manufacturing a semiconductor device and a processing apparatus for planarization wherein to form copper wiring in multiple layers. The removal of a residue of polishing by local electro polishing, the enhancement of the performance of planarization by using a grindstone and the reduction by small frictional force in electro polishing of damage, are enabled. To achieve the object, the following measures are taken. A residue of polishing of copper is removed by combining the detection of a local area including the residue of polishing of copper and local processing for electro polishing. As small-load processing for planarization is enabled by using electro polishing, multilayer interconnection structure using low-k material as a dielectric interlayer is also enabled.
    Type: Grant
    Filed: May 20, 2005
    Date of Patent: December 5, 2006
    Assignee: Hitachi, Ltd.
    Inventors: Souichi Katagiri, Ui Yamaguchi
  • Patent number: 6723223
    Abstract: For an electromechanical machining of a work piece there is an optimal pulse duration for the machining pulses corresponding to the maximum copying accuracy. Such an optimal pulse duration corresponds to a certain value of the gap. By alternating the machining pulses with measurement pulses it is possible to obtain an accurate information about the gap dimensions on-line during the electrochemical machining process. The process control means (20) are used to automate the electromechanical machining, while keeping it in the optimal mode. For this purpose the process control means (20) comprise the pulse control unit (26) to establish the pulse duration of the voltage pulses to be applied across the gap (4).
    Type: Grant
    Filed: May 7, 2002
    Date of Patent: April 20, 2004
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Alexandr Zaitsev, Sergey Bezroukov, Igor Leonidovich Agafonov, Aleksandr Leonidovich Belogorsky, Maxim Smirnov, Vladimir Zhitnikov
  • Patent number: 6689269
    Abstract: The invention relates to a method for electrochemically processing a workpiece (61) in which a pulsating or alternating electrical voltage is applied between the workpiece and a workpiece electrode (62) which are arranged at a distance from one another in an electrolyte. A distance range is defined by precisely dimensioning the mean value of the applied pulsating voltage and of the voltage amplitudes measured with regard to this mean value. A double layer charge reversal on the workpiece which is sufficient for bringing about the desired electrochemical reaction results within said distance range, whereas workpiece areas situated at further distances do not experience a sufficient double layer charge reversal. The dimensions of the space between the workpiece and the workpiece electrode are proportioned in such a way that only points of the area of the workpiece to be processed lie within said distance range.
    Type: Grant
    Filed: June 26, 2001
    Date of Patent: February 10, 2004
    Assignee: Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
    Inventors: Rolf Schuster, Viola Kirchner
  • Publication number: 20030010651
    Abstract: For an electromechanical machining of a work piece there is an optimal pulse duration for the machining pulses corresponding to the maximum copying accuracy. Such an optimal pulse duration corresponds to a certain value of the gap. By alternating the machining pulses with measurement pulses it is possible to obtain an accurate information about the gap dimensions on-line during the electrochemical machining process. The process control means (20) are used to automate the electromechanical machining, while keeping it in the optimal mode. For this purpose the process control means (20) comprise the pulse control unit (26) to establish the pulse duration of the voltage pulses to be applied across the gap (4).
    Type: Application
    Filed: May 7, 2002
    Publication date: January 16, 2003
    Inventors: Alexandr Zaitsev, Sergey Bezroukov, Igor Leonidovich Agafonov, Aleksandr Leonidovich Belogorsky, Maxim Smirnov, Vladimir Zhitnikov
  • Publication number: 20030010650
    Abstract: A method for on-line removal of cathode depositions during electrochemical process. The process control means (30) are arranged to alternate the unipolar machining voltage pulses U1 with the voltage pulses of opposite polarity U2 to the work piece (2) and the cathode (3). The process control means comprise an arrangement to determine the amount of cathode depositions on-line based on the operational parameter. Only in case the operational parameter exceeds the allowable level, the process control means (30) alternate the unipolar machining voltage pulses U1 with the voltage pulses of opposite polarity U2. In this case the cathode wear is minimized.
    Type: Application
    Filed: May 6, 2002
    Publication date: January 16, 2003
    Inventors: Alexandr Zaitsev, Nasich Zijatdinovich Gimaev, Voctor Kutsenko, Nailya A. Amirchanova, Aleksandr Leonidovich Belogorsky, Natalya Markelova, Rafail Ramzisovich Muchutdinov, Maarten Brussee
  • Publication number: 20020063066
    Abstract: A device and method for etching a wire to manufacture it into a tip for a scanning probe microscope or the like. The wire etching device generates a voltage signal for determining the level of a wire etching voltage, and applies the etching voltage of the level determined depending on the generated voltage signal to the wire to primarily etch it. The wire etching device measures the amount of etching current generated during the primary etching process and controls the level of the voltage signal according to the measured etching current amount so as to control the level of the etching voltage. Then, the device secondarily etches the wire with the level-controlled voltage signal. Therefore, the wire etching device can manufacture the tip while controlling its curvature radius and aspect ratio and reducing the amount of oxide on its surface.
    Type: Application
    Filed: May 15, 2001
    Publication date: May 30, 2002
    Inventors: Hyo Sok Ahn, Choong Hyun Kim, Doo in Kim
  • Patent number: 5685971
    Abstract: A method and apparatus for forming a passage with a variable diameter along its length in a conductive workpiece are disclosed. The workpiece is mounted in a fixture and an externally insulated hollow electrode is positioned proximate to a surface location of the workpiece into which the passage is to be formed. A first selected voltage is connected between the electrode and the workplace with the voltage being connected to cause the electrode to act as a cathode and the workpiece to act as an anode. A pump causes an acidic electrolyte to flow through the electrode at a chosen pressure and onto the workpiece surface. The electrode is moved toward the workpiece at a first selected feed rate by a CNC controller to cause a portion of the passage to be formed at a first predetermined diameter.
    Type: Grant
    Filed: September 30, 1991
    Date of Patent: November 11, 1997
    Assignee: General Electric Company
    Inventors: Lawrence Joseph Schroder, Lathan Merriman Wayman, Oleg Edelman
  • Patent number: 5639343
    Abstract: The present invention comprises a method of characterizing a group III-V epitaxial semiconductor wafer in a characterization profiling apparatus having an electrolytic cell. The wafer contains at least a Group III-V compound first-layer and a thin etch stop layer atop of the first layer and at least one second layer atop of the etch stop layer having a differing composition from the etch stop layer. The wafer is placed in the electrolytic cell and the surface of the at-least second layer is etched with a citrate buffer solution of citric acid and a salt of citric acid under anodic bias conditions. The etchant is highly selective and etching terminates upon reaching the etch stop layer. A Schottky diode is formed between the wafer and the solution, and the wafer is characterized in situ by performing capacitance-voltage measurements which are evaluated to determine the threshold voltage of the semiconductor wafer.
    Type: Grant
    Filed: December 13, 1995
    Date of Patent: June 17, 1997
    Assignee: Watkins-Johnson Company
    Inventor: Daniel Mark Dobkin