Abstract: A measuring apparatus enables accurate evaluation of a noncontact power supply. The measuring apparatus includes a mover that moves at least one of supplier and receiver electrodes of the noncontact power supply to measurement positions decided in advance, a meter that measures a measurement of the noncontact power supply at each measurement position, and a processor that calculates the power supplying efficiency of the noncontact power supply at each measurement position based on a measured value of the measurement. The processor specifies a region area of a region on the plane on which the electrodes move where the power supplying efficiency is within a designated range that has been designated in advance and generates area data indicating the region area.

Abstract: A liquid discharge head includes a nozzle to discharge a liquid, an individual chamber communicating with the nozzle, a supply channel communicating with the individual chamber to supply the liquid to the individual chamber, and a discharge channel communicating with the individual chamber to discharge the liquid in the individual chamber. A fluid resistance of the supply channel is greater than a fluid resistance of the discharge channel.

Abstract: An inkjet recording apparatus is provided. The inkjet recording apparatus includes a curable ink and a discharge head. The curable ink comprises a polymer having a polyester structural unit. The discharge head includes an individual liquid chamber including a circulation channel in which the curable ink is circulatable, and a nozzle from which the curable ink is dischargeable.

Abstract: In some aspects, a device is provided having a member with a region of enhanced electrochemical activity. In one aspect, a sensor of enhanced electrochemical activity is provided for detecting an analyte concentration level in a bio-fluid sample. The sensor may include a sensor member of a semiconductor material wherein the sensor member has a surface region of enhanced electrochemical activity. In other aspects, the member may be made of semiconducting foam having a surface region of enhanced electrochemical activity. In some embodiments, the region may be thermally-induced. Manufacturing methods and apparatus are also provided, as are numerous other aspects.

Abstract: Disclosed is a device for the electrochemical processing of components, having at least one electrode and at least one electrode holder, with which the electrode is movably mounted. The device comprises at least one optical measurement system for determining the position of the electrode. Also disclosed is a method for the electrochemical processing of a component, in particular with such a device, in which the electrode is moved during the electrochemical processing, the position of the electrode being detected by means of an optical measurement system.

Abstract: Disclosed is a method for etching graphene using a DNA sample of a predetermined DNA shape. The DNA sample is preferably placed onto a reaction area of a piece of highly oriented pyrolytic graphite (HOPG), and both the DNA sample and HOPG are then preferably placed into a humidity-controlled chamber. Humidity is preferably applied to the HOPG to produce a film of water across the surface of the DNA sample. Electrical voltage is also applied to the HOPG to create potential energy for the etching process. After the etching is completed, the reaction area is typically rinsed with deionized water.

Abstract: The invention relates to a machine for machining a part by micro-electrical discharge machining, said machine comprising a mechanism (44, 45, 46, 48) for modifying the configuration of the machine so as to alternatively and reversibly switch from a machining configuration to a sharpening configuration in which the tip of a same etching electrode (20) and another electrode (64) are dipped in an electrolyte bath in order to sharpen the tip of the etching electrode by electrochemnical corrosion.

Abstract: The invention refers to a method for the electrochemical machining of work pieces, such as, for example, nozzles, in particular nozzles with a blind hole. The invention also refers to a device for the electrochemical machining of work pieces. The invention is characterized by a relative movement, in particular a rotary movement during the machining between work piece and cathode. The device is characterized in that cathode and/or work piece are supported rotatably on bearings for a relative movement.

Abstract: A method for manufacturing an all solid-state lithium-ion rechargeable battery includes forming a first active material layer on a base, forming a solid electrolyte layer connected to the first active material layer, forming a second active material layer connected to the solid electrolyte layer, and repairing a short-circuit defect produced between the first active material layer and the second active material layer by supplying a repair current between the first active material layer and the second active material layer.

Abstract: In a method of producing an exhaust-gas heat exchanger of a motor vehicle, at least one component of the exhaust-gas heat exchanger, e.g. an outer jacket or ducts arranged in the outer jacket or metal sheets, is subjected to an electrochemical machining process to produce a homogenous and smooth surface. The electrochemical machining process may involve plasma-polishing or electro-polishing.

Abstract: Embodiments of the present invention include systems and methods for low-rate electrochemical (wet) etch that use a net cathodic current or potential. In particular, some embodiments achieve controlled etch rates of less than 0.1 nm/s by applying a small net cathodic current to a substrate as the substrate is submerged in an aqueous electrolyte. Depending on the embodiment, the aqueous electrolyte utilized may comprise the same type of cations as the material being etched from the substrate. Some embodiments are useful in etching thin film metals and alloys and fabrication of magnetic head transducer wafers.

Abstract: A machining system for machining a workpiece is provided. The machining system comprises a machine tool, a plurality of cutting tools, a CNC controller. The plurality of cutting tools comprises an electrode and a conventional cutting tool exchangeably disposed on the machine tool. The machining system further comprises a power supply, a process controller, and an electrolyte supply, wherein the machine tool, the electrode, the CNC controller, the power supply, the process controller and the electrolyte supply are configured to cooperate to function as an electroerosion machining device, wherein the machine tool, the CNC controller, the conventional cutting tool and the electrolyte supply are configured to cooperate to function as a conventional machining device, and wherein the machining system is configured to function alternately as the electroerosion machining device and the conventional machining device.

Abstract: The invention concerns a method for the machining of a metallic structural component, particularly a structural component of a gas turbine, by means of finishing with a pulsed electrochemical ablation process, whereby the structural component features a pre-contour, to be finished, with different over-measures. The method is characterized by the following processing steps: a) determination of the different over-measures of the pre-contour, and b) bilateral and simultaneous finishing by means of a simultaneous feed of respectively at least one electrode disposed on different sides of the structural component, whereby the feed velocity of the electrode in the area of the largest over-measure of the pre-contour is higher than the feed velocity in the area of the smaller over-measure of the pre-contour.

Abstract: The present invention provides a method for etching graphene using a DNA sample of a predetermined DNA shape. The DNA sample is preferably placed onto a reaction area of a piece of highly oriented pyrolytic graphite (HOPG), and both the DNA sample and HOPG are then preferably placed into a humidity-controlled chamber. Humidity is preferably applied to the HOPG to produce a film of water across the surface of the DNA sample. Electrical voltage is also applied to the HOPG to create potential energy for the etching process. After the etching is completed, the reaction area is typically rinsed with deionized water.

Abstract: A manufacturing method of a support for a planographic printing plate including at least an alkaline etching step of dissolving an aluminum surface layer of an aluminum web with an alkaline solution during a surface roughening treatment on a surface of the aluminum web continuously traveling, the manufacturing method comprising: a circulating step of cyclically using the alkaline solution between a treatment tank for the etching and an alkaline solution reservoir during adjusting composition concentration of the alkaline solution; and a filtering step of filtering the alkaline solution cyclically used so as to remove solid matter in the alkaline solution.

Abstract: A method for machining workpieces provides a machining electrode, which is guided at a specific distance to the workpiece. An electrolyte is provided between the workpiece and the machining electrode, through which an operating current flows between the machining electrode and the workpiece. The operating current results from an operating voltage (UA), which is produced at the machining electrode, the workpiece being connected to ground. To perform the machining procedure, the distance between the machining electrode and the workpiece is regulated and the operating voltage (UA) is determined in such a way that the resulting operating current is a DC current or a pulsed DC current—i.e., the operating voltage is a DC voltage of fixed or specific dimension. A measuring voltage (UM) is superimposed on the operating voltage (UA) for producing the operating current.

Abstract: Embodiments of the present invention include systems and methods for low-rate electrochemical (wet) etch that use a net cathodic current or potential. In particular, some embodiments achieve controlled etch rates of less than 0.1 nm/s by applying a small net cathodic current to a substrate as the substrate is submerged in an aqueous electrolyte. Depending on the embodiment, the aqueous electrolyte utilized may comprise the same type of cations as the material being etched from the substrate. Some embodiments are useful in etching thin film metals and alloys and fabrication of magnetic head transducer wafers.

Abstract: Method for machining a metal component which has a three-dimensional shape produced by removing and/or shaping material, wherein one or more superior component sections are electrochemically finish-machined by means of a nozzle-like cathode, via which an electrolyte is delivered into the working region, and wherein the cathode or the metal component is moved freely in space by means of a manipulator element.

Abstract: Conventional electrochemical machining process requires fixed shaped tool cathodes, which makes retooling time consuming and expensive. Flexible tool cathodes include elastically deformable cathodes that can deform in two or three dimensions and can adapt to the contour of the workpiece while the workpiece is moving relative to the flexible tool cathode. That is, the flexible tool cathode can perform tracing. Certain flexible tool cathodes can be also used for special configurations such corners and edges. The flexible tool cathodes can be used to polish, finish, or shape the workpiece through electrochemical processes.

Abstract: The present invention relates to a device and a method for the electrochemical machining of at least one workpiece with a conductor and first storing element for an electrolyte, wherein at least one measuring unit for measuring at least one property of the electrolyte is arranged on the conductor.

Abstract: Device and method suitable for the electrochemical processing of an object. The device is provided at least with a chamber for accommodating an electrolyte, means for supporting the object to be processed in this chamber, electrodes arranged in this chamber, and control means for applying an electric current between the object to be processed and the electrodes.

Abstract: The invention concerns a method for the machining of a metallic structural component, particularly a structural component of a gas turbine, by means of finishing with a pulsed electrochemical ablation process, whereby the structural component features a pre-contour, to be finished, with different over-measures. The method is characterized by the following processing steps: a) determination of the different over-measures of the pre-contour, and b) bilateral and simultaneous finishing by means of a simultaneous feed of respectively at least one electrode disposed on different sides of the structural component, whereby the feed velocity of the electrode in the area of the largest over-measure of the pre-contour is higher than the feed velocity in the area of the smaller over-measure of the pre-contour.

Abstract: The invention relates to a machine for machining a part by micro-electrical discharge machining, said machine comprising a mechanism (44, 45, 46, 48) for modifying the configuration of the machine so as to alternatively and reversibly switch from a machining configuration to a sharpening configuration in which the tip of a same etching electrode (20) and another electrode (64) are dipped in an electrolyte bath in order to sharpen the tip of the etching electrode by electrochemnical corrosion.

Abstract: According to the plasma treatment on an object accommodated in the processing room, the plasma treatment is carried out as follows. The discharge detecting sensor detects a signal of potential change caused with change in plasma discharge. Receiving the signal, the signal recording section temporarily records the signal as signal data indicating potential change. Referencing the signal data, the signal analysis section extracts index data. The index data shows a condition of plasma discharge, for example, as a count value for discharge-start waves, a count value for abnormal discharge, a count value for feeble arc discharge. The device control section judges a condition of plasma discharge by monitoring the index data and carries out the retry process, the accumulative plasma process, and the maintenance judgment process for performing plasma treatment operations properly.

Abstract: A method of rear surface treatment is carried out by: preparing a semiconductor or device in which an integrated circuit having a plurality of electrodes is provided on the front surface of a semiconductor substrate; electrically con netting the plurality of electrodes to an anode; and electropolishing the rear surface of the semiconductor substrate by performing anodic oxidation with an electrolytic solution placed in contact with the rear surface of the semiconductor substrate.

Abstract: A method of rear surface treatment is carried out by: preparing a semiconductor device in which an integrated circuit having a plurality of electrodes is provided on the front surface of a semiconductor substrate; electrically connecting the plurality of electrodes to an anode; and electropolishing the rear surface of the semiconductor substrate by performing anodic oxidation with an electrolytic solution placed in contact with the rear surface of the semiconductor substrate.

Abstract: An electropolishing apparatus and method are provided for polishing stents and other medical implants. The apparatus includes a motor that rotates a roller. The roller continuously rotates the medical implant to be electropolished. One of the advantages of the apparatus and method is that marks generated around the electrical contact between the anode and the medical implant are minimized. In addition, the medical implant is polished more evenly than conventional electropolishing systems.

Abstract: A method and apparatus for evaluating a conditioned electrochemical mechanical polishing pad are provided. A polishing pad is conditioned using a first set of process conditions. A sheet wafer and a residue wafer are polished on the polishing pad. The removal rates of one or more materials from the sheet wafer and the residue wafer are measured. A normalized removal rate is calculated. The polishing pad is further conditioned if the normalized removal rate is not within a minimum value and a maximum value. In one embodiment, the normalized removal rate comprises a ratio of the removal rate of the residue wafer to the removal rate of the sheet wafer.

Abstract: An apparatus and method for the controlled fabrication of nanostructures using catalyst retaining structures is disclosed. The apparatus includes one or more modified force microscopes having a nanotube attached to the tip portion of the microscopes. An electric current is passed from the nanotube to a catalyst layer of a substrate, thereby causing a localized chemical reaction to occur in a resist layer adjacent the catalyst layer. The region of the resist layer where the chemical reaction occurred is etched, thereby exposing a catalyst particle or particles in the catalyst layer surrounded by a wall of unetched resist material. Subsequent chemical vapor deposition causes growth of a nanostructure to occur upward through the wall of unetched resist material having controlled characteristics of height and diameter and, for parallel systems, number density.

Abstract: An electrolytic processing apparatus can detect the end point of electrolytic processing stably with high precision and with a relatively simple construction. The electrolytic processing apparatus includes: a processing electrode which can come close to or into contact with a processing object; a feeding electrode for feeding electricity to the processing object; a fluid supply section for supplying fluid between the processing object and at least one of the processing electrode and the feeding electrode; a processing power source for applying a voltage between the processing electrode and the feeding electrode; a drive section for causing relative movement between the processing object and at least one of the processing electrode and the feeding electrode; and an eddy current sensor for detecting the thickness of the processing object from a change in eddy current loss. The sensor is disposed not in contact with (or separately) by an insulator from the processing electrode and/or the feeding electrode.

Abstract: An electrode (10) is provided for electrochemical reduction of a workpiece (20) that is to be treated. The electrode (10) has a predefined contour and contains an electrically conductive material. The electrically conductive material of the predefined contour forms an electrode core (12). The outside of the electrode core (12) is covered with an insulation layer (13). The insulation layer (13) is porous and is made of an electrically non-conductive material.

Abstract: Methods and apparatus for providing closed-loop control over an electrochemical etching process during porous semiconductor fabrication enhance the quality of the porous semiconductor materials, especially those contained structural variations (such as porosity or morphology variations) along the thickness of said porous semiconductors. Such enhancement of the control over the electrochemical etching process is highly desired for many applications of porous semiconductor materials.

Abstract: An electrode (10) is provided for electrochemical reduction of a workpiece (20) that is to be treated. The electrode (10) has a predefined contour and contains an electrically conductive material. The electrically conductive material of the predefined contour forms an electrode core (12). The outside of the electrode core (12) is covered with an insulation layer (13). The insulation layer (13) is porous and is made of an electrically non-conductive material.

Abstract: A composite electrolytic processing method makes it possible to remove a conductive film without leaving it in an electrically-insulated state on an underlying barrier film, thereby exposing the barrier film. The electrochemical mechanical polishing method includes: applying a voltage between a first electrode connected to one pole of a power source and a second electrode, connected to the other pole of the power source, for feeding electricity to a conductive film of a polishing object; filling an electrolytic liquid into a space between the first electrode and the conductive film of the polishing object; and pressing and rubbing the conductive film against a polishing surface of a polishing pad to polish the conductive film in such a manner that a barrier film underlying the conductive film becomes gradually exposed from the center toward the periphery of the polishing object.

Abstract: The invention provides a method of determining at least one electrochemical characteristic of a chemical-mechanical or electrochemical-mechanical polishing system comprising application of a potential between a polishing substrate and an electrode to generate a current, and determining the at least one electrochemical characteristic by analysis of the current as a function of time.

Abstract: A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

Abstract: Tools and methods for in-situ characterizing of a surface of a polishing pad are described. A characterization tool is integrated with polishing tool so that the polishing pad can be monitored in-situ. The characterization tool and the polishing pad can be rotated or moved so that any portion of the polishing pad can be tested.

Abstract: A polishing pad includes a guide plate having a plurality of holes therein and being affixed to a compressible under-layer; and a plurality of conducting polishing elements each affixed to the compressible under-layer and passing through a sealed contact with a proton exchange membrane and corresponding hole in the guide plate so as to be maintained in a substantially vertical orientation with respect to the compressible under-layer but being translatable in a vertical direction with respect to the guide plate. The polishing pad may also include a slurry distribution material fastened to the guide plate by an adhesive. Pad wear sensors may also be provided in the polishing pad.

Abstract: Methods of refining using a plurality of refining elements are discussed. A refining apparatus having refining elements that can be smaller than the workpiece being refined are disclosed. New refining methods, refining apparatus, and refining elements disclosed. Methods of refining using frictional refining, chemical refining, tribochemical refining, and electrochemical refining and combinations thereof are disclosed. A refining apparatus having magnetically responsive refining elements that can be smaller than the workpiece being refined are disclosed. The refining apparatus can supply a parallel refining motion to the refining element(s) for example through magnetic coupling forces. The refining apparatus can supply multiple different parallel refining motions to multiple different refining elements for example solely through magnetic coupling forces to improve refining quality and versatility. A refining chamber can be used. New methods of control are refining disclosed.

Abstract: Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.

Abstract: Embodiments of the present invention include a method for quantitatively detecting embedded particles of a disk spacer ring comprising. The method includes dissolving a layer of a disk spacer ring into a liquid solution, the disk spacer ring layer comprising embedded particles. The method further includes filtering the solution to capture the embedded particles. The method further includes counting the particles.

Abstract: On a fixture for electro-chemical machining for the production of long, curved cavities (11) in a component (12), the working electrode (3) of the electro-chemical machining tool (1) is connected to a guide body (1a) which moveably rests against the inner walls of the respective cavity by means of power-actuated guide elements (2), with the guide body being connected to a flexurally soft and torsionally stiff guide linkage (5) coupled to a feed and rotary drive. Control of the movement of the guide body is accomplished in dependence of at least one wall thickness measured with a measuring device (13, 14) during feed movement.

Abstract: Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.

Abstract: A method and apparatus which uses a plating electrode in an electrolyte bath. The plating electrode works to purify an electrolyte polishing solution during the electro-polishing process. Preferably, the plating electrode is employed in a closed loop feedback system. The plating electrode may be powered by a power supply which is controlled by a controller. A sensor may be connected to the controller and the sensor may be configured to sense a characteristic (for example, but not limited to: resistance, conductance or optical transmission, absorption of light, etc.) of the electrolyte bath, which tends to indicate the level of saturation. Preferably, the plating electrode is easily replaceable.

Abstract: In a method for photo-electrochemical etching of a semiconductor sample, the semiconductor sample is brought in contact with an electrolyte liquid. The contact area formed thereby is illuminated through the electrolyte liquid with UV light. The photo-current created by UV light irradiation at the contact area is measured. To increase the etching quality, a jet of fresh electrolyte liquid is repeatedly applied to the contact area. A device for carrying out the method includes a container to be filled with an electrolyte liquid, a UV source for illuminating the semiconductor sample with UV light through the electrolyte liquid, and a measuring instrument for measuring the photo-current created during UV light irradiation of the contact area. Further provided are an inlet for supplying fresh electrolyte liquid, directed towards the semiconductor sample, and a device attached to the inlet for repeated production of electrolyte fluid jets, directed towards the semiconductor sample.

Abstract: The present invention provides method of adjusting a thickness profile of a top metal layer of a workpiece using a processing solution. A thickness profile control member is included that has at least first and second regions that will allow for processing at respective first and second rates that are different from each other. When processing the workpiece, the processing system establishes relative lateral movement between the workpiece and the thickness profile control member so that a certain portion of the workpiece is disposed in locations that correspond to the first and second regions at different points in time during the processing. In a preferred aspect, the lateral movement is controlled as a result of data obtained from sensors relating to the thickness of a removed or deposited layer.

Abstract: Systems and methods for detecting the endpoint of a polishing step. In general, an electropolishing system is provided with a power supply configured to deliver a current through an electrolytic solution. Signal characteristics of the signal provided by the power supply are monitored to determine a polishing endpoint. Illustratively, the monitored signal characteristics include current and voltage.

Abstract: A polishing method and polishing apparatus able to easily flatten an initial unevenness with an excellent efficiency of removal of excess copper film and suppress damage to a lower interlayer insulation film, and a plating method and plating apparatus able to deposit a flat copper film. The polishing method comprises the steps of measuring thickness equivalent data of a film on a wafer, making a cathode member smaller than the surface face a region thereof, interposing an electrolytic solution between the surface and the cathode member, applying a voltage using the cathode member as a cathode and the film an anode, performing electrolytic polishing by electrolytic elution or anodic oxidation and chelation and removal of a chelate film in the same region preferentially from projecting portions of the film until removing the target amount of film obtained from the thickness equivalent data, and repeating steps of moving the cathode member to another region to flattening the regions over the entire surface.

Abstract: The present invention alleviates workloads in chemical-mechanical polishing (CMP) by replacing all or a portion of the substrate processing by means of chemical-mechanical polishing with electrolytic processing using deionized water, ultrapure water or the like and enables processing insuring the higher flatness with the higher efficiency.

Abstract: A polishing method and polishing apparatus able to easily flatten an initial unevenness with an excellent efficiency of removal of excess copper film and suppress damage to a lower interlayer insulation film, and a plating method and plating apparatus able to deposit a flat copper film. The polishing method comprises the steps of measuring thickness equivalent data of a film on a wafer, making a cathode member smaller than the surface face a region thereof, interposing an electrolytic solution between the surface and the cathode member, applying a voltage using the cathode member as a cathode and the film an anode, performing electrolytic polishing by electrolytic elution or anodic oxidation and chelation and removal of a chelate film in the same region preferentially from projecting portions of the film until removing the target amount of film obtained from the thickness equivalent data, and repeating steps of moving the cathode member to another region to flattening the regions over the entire surface.