Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.

Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.

Abstract: Manufacturing an exterior decor panel for a home appliance includes laminating a photosensitive dry film on a front surface of a metal sheet, the photosensitive dry film having a higher etch resistance than the metal sheet against an electrolytic solution, photo-masking the photosensitive dry film attached to the metal sheet to create a pattern having a minimum width of 0.1 mm in the photosensitive dry film to thereby expose the front surface of the metal sheet corresponding to the pattern in the photosensitive film, electrolytic-polishing the photo-masked metal sheet by dipping the photo-masked metal sheet in an electrolytic bath to allow the electrolytic solution to contact the exposed front surface of the metal sheet and form the pattern in the front surface of the metal sheet, and performing post-treatment on the metal sheet, the post-treatment including washing and removing the photosensitive dry film.

Abstract: The invention relates to a method (3) of fabricating a mold (39, 39?) including the following steps: (a) depositing (9) an electrically conductive layer on the top (20) and bottom (22) of a wafer (21) made of silicon-based material; (b) securing (13) the wafer to a substrate (23) using an adhesive layer; (c) removing (15) one part (26) of the conductive layer from the top of the wafer (21); and (d) etching (17) the wafer as far as the bottom conductive layer (22) thereof in the shape (26) of the one part removed from the top conductive layer (22) to form at least one cavity (25) in the mold. The invention concerns the field of micromechanical parts, particularly, for timepiece movements.

Abstract: Disclosed herein is a method of manufacturing a laterally graded porous silicon optical filter through diffusion-limited etching. The change in resonance frequency of the porous silicon layer in a taper axis direction is adjusted using the diffusion of reactive ions in an etchant under conditions of use of a related etch mask pattern. It is possible to manufacture an optical band-pass filter having a resonance frequency that linearly changes using a tapered etch window opening.

Abstract: The present invention provides a method for etching graphene using a DNA sample of a predetermined DNA shape. The DNA sample is preferably placed onto a reaction area of a piece of highly oriented pyrolytic graphite (HOPG), and both the DNA sample and HOPG are then preferably placed into a humidity-controlled chamber. Humidity is preferably applied to the HOPG to produce a film of water across the surface of the DNA sample. Electrical voltage is also applied to the HOPG to create potential energy for the etching process. After the etching is completed, the reaction area is typically rinsed with deionized water.

Abstract: A method is disclosed for defining discrete magnetic and non-magnetic regions on the magnetic film layer of a storage media substrate. The method applies anodic oxidation of a cobalt-containing magnetic film layer to remove cobalt, followed by controlled deposition of a non-magnetic matrix into the regions where the cobalt has been removed. Deposition may either be electrodeposition, collimated vacuum deposition, or other methods depending upon the composition of the non-magnetic matrix being deposited. The method may be performed in a single electrochemical cell.

Abstract: [Subject Matter] To provide a method for manufacturing a wiring substrate where rigidity is enhanced in an insulative portion made by oxidizing aluminum. [Solution(s)] Aluminum oxide insulative portion 24 is formed on aluminum plate 20 as shown in FIG. 1(A) through anodic oxidation (FIG. 1(C)). Then, holes (nano-holes) (24h) in aluminum oxide 24 are filled with resin 30 (FIG. 1(E)). Accordingly, the rigidity (strength) of insulative portion 24 will be enhanced and cracking will not occur during heat cycles. Also, the insulation reliability of aluminum oxide will increase, and short circuiting may be prevented at through holes 26 (aluminum portions) separated by aluminum oxide 24.

Abstract: Disclosed herein is a method for patterning a metal layer, which includes the following steps. A substrate having a metal layer thereon is provided. A patterned conductive polymeric layer is formed on the metal layer, wherein a portion of the metal layer is exposed by the patterned conductive polymeric layer. The substrate having the patterned conductive polymer layer is disposed in an electrolytic cell, so that the exposed portion of the metal layer is immersed in the electrolytic solution of the electrolytic cell. The anode of the electrolytic cell is electrically coupled to the patterned conductive polymeric layer, while the cathode of the electrolytic cell is immersed in the electrolytic solution. Sequentially, an electrical potential is applied across the anode and the cathode to perform an electrolysis reaction so that the exposed portion of the metal layer is dissolved in the electrolytic solution.

Abstract: Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.

Abstract: A patterned magnetic recording media and method thereof is provided. A recording layer comprises a continuous surface of more-noble elements and less-noble elements, such as CoXYZ, wherein X can be Pt, Pd, Ru, Rh, Ir, Os, or Au, wherein Y can be null or Cr, and wherein Z can be null, Cu, Ta, Ti, O, B, Ag, or TiO2. The recording layer is masked, shielding areas for recording domains and exposing areas between the recording domains. A voltage bias establishes the substrate as an anode in the presence of Pt cathode, in an electrolyte bath. Ions of the less-noble element are anodically removed predominantly from the exposed areas of the recording layer for a controlled time. The controlled time minimizes oxidation of the nobler element and reduces undercutting of the recording domains. The article produced can have separating areas with surfaces substantially formed of the more-noble element.

Abstract: Numerous electrochemical fabrication methods and apparatus are provided for producing multi-layer structures (e.g. having meso-scale or micro-scale features) from a plurality of layers of deposited materials using adhered masks (e.g. formed from liquid photoresist or dry film), where two or more materials may be provided per layer where at least one of the materials is a structural material and one or more of any other materials may be a sacrificial material which will be removed after formation of the structure. Materials may comprise conductive materials that are electrodeposited or deposited in an electroless manner. In some embodiments special care is undertaken to ensure alignment between patterns formed on successive layers.

Abstract: A metal is provided on a polymeric component and the component is subjected to a removal process such as plasma or liquid etching in the presence of an electric field. The etchant selectively attacks the polymer at the boundary between the metal and the polymer, thereby forming gaps alongside the metal. A cover metal may be plated onto the metal in the gaps. The cover metal protects the principal metal during subsequent etching procedures.

Abstract: The methods and systems described provide for radiation assisted material deposition, removal, and planarization at a surface, edge, and/or bevel of a workpiece such as a semiconductor wafer. Exemplary processes performed on a workpiece surface having topographical features include radiation assisted electrochemical material deposition, which produces an adsorbate layer outside of the features to suppress deposition outside of the features and to encourage, through charge conservation, deposition into the features to achieve, for example, a planar surface profile. A further exemplary process is radiation assisted electrochemical removal of material, which produces an adsorbate layer in the features to suppress removal of material from the features and to encourage, through charge conservation, removal of material outside of the features so that, for example, a planar surface profile is achieved.

Abstract: An aqueous thiourea-free gold etching bath for electrolytically etching gold from a microelectronic workpiece. One embodiment of the aqueous thiourea-free bath contains: (a) about 0.5–1.5 M iodide; (b) about 0.1–0.3 M sulfite; and (c) about 1.0–3.0 g/L wetting agent. The bath is useful in a process for electrolytically etching gold from a microelectronic workpiece. A tool system in which the baths and processes of the present invention may be used is also described.

Abstract: Process for the production of shaped articles of niobium or tantalum by electrochemical etching of a niobium or tantalum sheet covered by a structured photoresist mask in an aqueous solution containing hydrofluoric acid, the etching being effected under electrochemical conditions under which strong noise is superposed on the etching current and the etching solution contains a water-soluble polymer.

Abstract: A method for forming high aspect ratio metallization on a wafer is implemented in the formation of a disc drive recording head. The process involves patterning photoresist where metal is to be later deposited, milling around the photoresist perimeter, depositing insulating material in the milled region, around and over the photoresist, then dissolving the photoresist to be replaced with metal. The process features the ability to desirably increase the aspect ratio of height to width of a metallization on a wafer. An improved aspect ratio can be utilized to improve the quality of a write pole in a recording head, effectively increasing its achievable recording density.

Abstract: A method of manufacture for optical spectral filters with omnidirectional properties in the visible, near IR, mid IR and/or far IR (infrared) spectral ranges is based on the formation of large arrays of coherently modulated waveguides by electrochemical etching of a semiconductor wafer to form a pore array. Further processing of said porous semiconductor wafer optimizes the filtering properties of such a material. The method of filter manufacturing is large scale compatible and economically favorable. The resulting exemplary non-limiting illustrative filters are stable, do not degrade over time, do not exhibit material delamination problems and offer superior transmittance for use as bandpass, band blocking and narrow-bandpass filters. Such filters are useful for a wide variety of applications including but not limited to spectroscopy, optical communications, astronomy and sensing.

Abstract: A Dry-Film resist formed of, for example, a photosensitive film is stacked on the electroconductive material and these portions, other than a projection electrode formation area, formed on a wiring board's electrode serving as a portion of a circuit pattern are masked with a mask. After this, the wiring board is exposed to light and, after the removal of the mask, a development process is performed, thus eliminating the Dry-Film resist on the wiring board at the portion other than the projection electrode formation area. Then the electroconductive material of the wiring board is etched under an etching process to provide a projection electrode having a bump with a pointed tapering end in vertical cross-section. Finally, the wiring board is exposed to a Dry-Film resist elimination solution to remove remaining Dry-Film resist from the projection electrode. And a plating process is performed on the electroconductive material to form a plated layer and hence complete the projection electrode.

Abstract: A method and associated structure for increasing the rate at which a chromium volume is etched when the chromium body is contacted by an acid solution such as hydrochloric acid. The etch rate is increased by a metallic or steel body in continuous electrical contact with the chromium volume, both of which are in continuous contact with the acid solution. At a temperature between about 21° C. and about 52° C., and a hydrochloric acid concentration (molarity) between about 1.2 M and about 2.4 M, the etch rate is at least a factor of about two greater than an etch rate that would occur in an absence of the steel body. In one embodiment, the chromium volume is a chromium layer that rests upon a conductive layer that includes a metal such as copper, wherein the acid solution is not in contact with the conductive layer.

Abstract: A structural body material layer is formed directly on a base substrate or via a sacrificing layer or a peeling layer, a groove is fabricated electrochemically along an outer configuration shape of a part constituting an object at the structural body material layer and thereafter, only the sacrificing layer or the base substrate is selectively removed or the part is mechanically separated from the peeling layer to thereby separate the part and the base substrate and provide the part constituting the object or fabricate a part having a movable portion by partially restricting a portion to be separated.

Abstract: The invention relates to methods for producing an electrically-conductive structure on a non-planar surface (1) with the following steps:

Abstract: In a method of etching a substrate having a surface layer of conductive material, a circuit pattern is transferred to the surface layer in a central surface area portion of the substrate by electrochemical etching. To prevent excessive current densities from forming at the periphery of the central surface area portion during the etching step, a frame adapted to attract electrical field is provided adjacent to the central surface area portion. The frame can be part of a separate frame element which is placed on the substrate before the etching step, or be incorporated in a resist coating on the substrate. The frame can be transferred to the resist coating by any suitable means, for example by photolithographic exposure through a mask with a suitable frame pattern. Alternatively, the frame can be incorporated in a prefabricated substrate element, to which the circuit pattern is transferred in the etching step.

Abstract: A process for forming a plurality of bumps on a wafer comprises forming a first UBM (under ball metallurgy) over an active surface of a wafer. A second UBM is formed over the first UBM. A part of the second UBM is removed to expose the first UBM. A plurality of solders are respectively formed to cover the second UBM and the first UBM not covered by the second UBM. The first UBM not covered by the second UBM and not covered by the solders is removed.

Abstract: A thermoelectric device with improved efficiency is provided. In one embodiment, the thermoelectric device includes an electrical conductor thermally coupled to a cold plate and a thermoelement electrically coupled to the electrical conductor. The thermoelement is constructed from a thermoelectric material and has a plurality of tips through which the thermoelement is electrically coupled to the electrical conductor. The thermoelectric tips provide a low resistive connection while minimizing thermal conduction between the electrical conductor and the thermoelement.

Abstract: New photoresists are provides that are suitable for short wavelength imaging, particularly sub-170 nm such as 157 nm. Resists of the invention comprise a fluorine-containing polymer, a photoactive component, and a solvent component. Preferred solvents for use on the resists of the invention can maintain the resist components in solution and include one or more preferably two or more (i.e. blends) of solvents. In particularly preferred solvent blends of the invention, each blend member evaporates at substantially equal rates, whereby the resist composition maintains a substantially constant concentration of each blend member.

Abstract: Self-aligned aperture masks are produced using a positive-acting photoresist (18) which is developed with a liquid developer. The apertures (30) of the mask have lower levels of inter-aperture variability than masks produced using mechanical transfer of toner particles (FIGS. 4-5 and 7-8), both for the apertures of a given mask and between masks.

Abstract: Disclosed is an ink jet print head and a method of producing the same, the ink jet print head including a plurality of ink ejecting orifices which are formed with a desired shape and a uniform size by only once using metal plating technique, having an excellent productivity and a low manufacturing cost. According to a first embodiment of the present invention, in the steps for forming an improved metal barrier layer, which is comprised of the conventional barrier layer and the conventional nozzle plate combined together, the metal barrier layer can be formed on a wetting layer by using electrolytic plating or electroless plating of Ni. As a result, an upper surface of a first photoresist mold is completely covered with the overflowing Ni. Further, an upper portion of a second photoresist mold is partially covered with the overplating Ni and is partially opened at a proper size and a desired shape. Thereby, an ink ejecting orifice is created at the upper portion of the second photoresist mold.

Abstract: In an interference filter having a layer with an area consisting of a porous material extending from the surface of the layer to the interior, the dimensions of the porous layer area in a direction normal to the layer surface have different values to provide for varying reflection or, respectively, transmission characteristics.

Abstract: Disclosed herewithin is an apparatus for fabricating a stent which involves processing a tubular member whereby no connection points to join the edges of a flat pattern are necessary. The process includes the steps of: a) preparing the surface of a tubular member, b) coating the outside surface of the tubular member with a photo-sensitive resist material, c) placing the tubular member in an apparatus designed to simultaneously rotate the tubular member while passing a specially configured photographic frame negative between a light source and the tubular member, d) exposing the tubular member to a photoresist developer, e) rinsing the excess developer and uncured resist from the exposed tubular member, f) sealing the inner lumen of the tubular member, and g) treating the tubular member with a chemical or electro-chemical process to remove uncovered metal. By modifying the photographic negative, this process can be employed to fabricate a virtually unlimited number of stent designs and configurations.

Abstract: A metal is provided on a polymeric component and the component is subjected to a removal process such as plasma or liquid etching in the presence of an electric field. The etchant selectively attacks the polymer at the boundary between the metal and the polymer, thereby forming gaps alongside the metal. A cover metal may be plated onto the metal in the gaps. The cover metal protects the principal metal during subsequent etching procedures.

Abstract: The present invention provides a method for forming porous silicon, which includes the steps of: a) providing a silicon substrate; b) growing a GaAs layer on the silicon substrate; c) defining a pattern for the GaAs layer by a photolithography process and etching the patterned GaAs layer to obtain a GaAs mask; and d) forming a porous silicon layer by anodic-oxidation-etching the silicon substrate uncovered by the GaAs mask. By this method, etching under the GaAs layer on the silicon substrate can be executed very well to form the porous silicon. And the patterned GaAs layer is etched by a process in step c), which is selected from a wet etching and a dry etching process with a photoresist as a mask. In addition, the anodic-oxidation-etching process in step d) is an electrolytic process executed in HF acidic solution which is a mixture of 30 vol. % HF and 70 vol. % H.sub.2 O, in which the HF concentration is 49 wt. %.

Abstract: A method for forming a minute pattern in a metal workpiece, comprising the steps of forming a mask pattern on the metal workpiece and electro-chemically etching the metal workpiece. The workpiece is electro-chemically etched in a electrolyte bath following formation of the mask pattern.

Abstract: A heat generating type ink-jet print head including an ink supply passage for receiving an ink from an ink container, a micro chamber for storing the ink and nozzles, all being directly formed on a substrate, and a method for fabricating the ink-jet print head using an electrolytic polishing process, and a method for fabricating the ink-jet print head. The ink-jet print head is fabricated using an electrolytic polishing process, thereby achieving an accurate and inexpensive fabrication.

Abstract: A sensor arrangement having a substrate of doped silicon with channels in a principal face, a selective means for detecting a material, the selective means covering the principal face without filling the channels, and a measuring instrument for registering a physical quantity dependent on the influence of a material is provided. A catalytic layer is particularly used as selective means and a temperature sensor is particularly used as measuring instrument. Alternatively, the sensor arrangement is fashioned as a capacitor having a porous cooperating electrode. The channels are preferably produced by electrochemical etching.

Abstract: In through-mask electroetching of a metal film on top of an insulating substrate, the shape of the metal film being etched is a function of the mask opening, the spacing between the openings and the thickness of the mask. An analysis of the electric field around the mask and the metal film is used to determine conditions leading to the formation of islands of unetched metal films within the openings. The analysis is then used to design the mask pattern and eliminate these islands. The increase in the ratio of the mask thickness to the opening width for eliminating the islands also lowers the undercutting of the mask. Premature stoppage of the electroetching process arising from the isolation of the sample film from the contact is also addressed. The electrical contact to the sample is made at one end and a nozzle jet of electrolyte is slowly swept from the far end of the sample towards the electrical contact.