Abstract: The etching of a sacrificial silicon portion in a microstructure such as a microelectromechanical structure by the use of etchant gases that are noble gas fluorides or halogen fluorides is performed with greater selectivity toward the silicon portion relative to other portions of the microstructure by the addition of non-etchant gaseous additives to the etchant gas. An additional discovery is that non-etchant gaseous additives that have a molar averaged formula weight that is below that of molecular nitrogen offer significant advantages over gaseous additives of higher formula weights by causing completion of the etch in a shorter period of time while still achieving the same improvement in selectivity.

Abstract: Adherent matrix layers such as post-etch and other post-process residues are removed from a substrate by exposing them to a vapor phase solvent to allow penetration of the vapor phase solvent into the adherent matrix layers and condensing the vapor phase solvent into the adherent matrix layers and revaporized to promote fragmentation of the matrix and facilitate removal. Megasonic energy may be transmitted via a transmission member to the adherent matrix through the solvent condensed thereon to loosen fragments and particles. The substrate is typically rotated to improve contact between the megasonic energy transmission member and the condensed solvent and achieve more uniform cleaning. A co-solvent which is soluble in the vapor phase solvent may be added to enhance removal of specific adherent matrix materials.

Abstract: A resin etching solution containing a hydroxyalkylamine, an alkali metal compound and water, or an aliphatic alcohol, an aliphatic amine, an alkali metal compound and water, and a process for etching a polyimide film containing a resist pattern or metal layer pattern formed on either or both sides using the resin etching solution.

Abstract: A method for removing glass deposition from a reactor chamber, at least one interior surface of the reactor chamber having the glass deposition deposited thereon. The invention includes introducing a gaseous cleaning mixture comprising an anhydrous hydrogen fluoride (HF) gas into the chamber interior. The invention further includes maintaining the chamber interior at a temperature of between about 0.degree. C. and about 300.degree. C., and removing a gaseous reaction byproduct from the chamber interior.

Abstract: Apparatus and method for direct delivery of enabling chemical gas from a liquid source and of HF gas in a hydrogen fluoride/enabling chemical based cleaning or etching process, such as a silicon dioxide film etching process. The liquid enabling chemical is temperature controlled to generate a vapor pressure which is sufficient to operate a mass flow controller at a desired processing pressure without a carrier gas. Prior to entering the process chamber, the enabling chemical gas is pre-mixed with HF and optionally, a carrier gas, all of which are supplied at flow rates independent of each other. By controlling the vapor pressure of the solvent in this way, solvent/HF/carrier mixtures which are not physically possible with carrier gas systems are attainable allowing access to a larger process space.

Abstract: In order to study an etching rate difference of a layer formed mainly with silicon dioxide on a wafer, a thermal oxide film (113) and layers of BSG (117), BPSG (125), and PSG (129) are laminated on a wafer and are etched in a gaseous etching atmosphere consisting essentially of hydrogen fluoride or a mixture of hydrogen fluoride and water vapor. The layers are etched with various etching rates which are higher than that of the thermal oxide film. The etching rate difference is a difference between the etching rate of each layer and an etching rate of the thermal oxide film. The layers may include impurities, such as boron and phosphorus, collectively as a part of a layer material of each layer. The etching rate difference depends on the layer material. Preferably, the gaseous etching atmosphere should have a reduced pressure. Alternatively, a water vapor partial pressure should not be greater than 2000 Pa. As a further alternative, either the layer or the gaseous etching atmosphere should be heated.

Abstract: The present invention provides a method for dry-etching a solid surface with a gaseous bismuth halide compound, which permits achivement of a simple and perfect dry-process for manufacturing of electoric devices, quantum devices etc., giving a high reproducibility.

Abstract: Disclosed is a method for improved processing of semiconductor wafers and the like using processing chemicals, particularly hydrofluoric acid (HF) and water mixtures. Homogeneous vapor mixtures are generated from homogeneous liquid phase mixtures which are preferably recirculated, mixed and agitated. The liquid phase is advantageously circulated through a chemical chamber within the processing bowl. Exposure of wafers to vapors from the chemical chamber can be controlled by a vapor control valve which is advantageously the bottom of the processing chamber. The wafer is rotated or otherwise moved within the processing chamber to provide uniform dispersion of the homogeneous reactant vapors across the wafer surface and to facilitate vapor circulation to the processed surface. A radiative volatilization processor can be utilized to volatilize reaction by-products which form under some conditions. The processes provide efficient uniform etching with low particle count performance.

Abstract: An apparatus and method is provided for removing deposits which accumulate within a continuous APCVD system having more than one reaction chamber. The apparatus includes means for delivering vaporized etchant material at a controlled flow rate to each reaction chamber along the system. The mechanism for channeling or metering etchant to each injector can be achieved by properly shaped receptacles or chambers having one or more inlets and multiple outlets. The apparatus can remove deposits of deposition materials which periodically fill or plug perforations within the chamber floor, the perforation openings being necessary to allow floor purge to the wafer backside surface. The apparatus can also remove deposition material formed upon or between purge curtains surrounding each chamber. The present apparatus can also selectively meter more etchant to one or more reaction chambers in order to remove unusually heavy amounts of deposits formed therein.