Abstract: A method for improving an etching rate of wet etching involves an etching reaction chamber used for etching work. The etching reaction chamber is connected with an etchant supply mechanism. The etchant supply mechanism is connected with a purified water supply mechanism. The purified water supply mechanism injects purified water into the etchant supply mechanism according to a change range of pH of the etchant in the etchant supply mechanism to ensure that a hydrogen ion concentration and a fluoride ion concentration of the etchant in the etchant supply mechanism are stable.

Abstract: A process for surface treatment of semi-finished aluminum products is provided. The process includes preparing an aqueous solution of sodium hydroxide (NaOH) and dissolved metallic aluminum, kept in suspension by adding complexing agents including gluconate and sorbitol, and placing a semi-finished aluminum product in contact with the aqueous solution, maintaining temperature of the aqueous solution within a predetermined range.

Abstract: A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer in the solar cell is etched without substantially etching a topmost metallic layer comprising tin. For example, an etchant comprising sulfuric acid and hydrogen peroxide may be employed to etch the copper layer selective to the tin layer. A particular example of the aforementioned etchant is a Co-Bra Etch® etchant modified to comprise about 1% by volume of sulfuric acid, about 4% by volume of phosphoric acid, and about 2% by volume of stabilized hydrogen peroxide. In one embodiment, an aluminum layer in the solar cell is etched without substantially etching the tin layer. For example, an etchant comprising potassium hydroxide may be employed to etch the aluminum layer without substantially etching the tin layer.

Abstract: A flux residue cleaning system includes first and second immersion chambers, first and second spray chambers, and a drying chamber. The first immersion chamber softens an outer region of a flux residue formed around microbumps interposed between a wafer and a die when the wafer is immersed in a first chemical. The first spray chamber removes the outer region of the flux residue when the wafer is impinged upon by a first chemical spray in order to expose an inner region of the flux residue. The second immersion chamber softens the inner region of the flux residue when the wafer is immersed in a second chemical. The second spray chamber removes the inner region of the flux residue when the wafer is impinged upon by a second chemical spray in order to clean the wafer to a predetermined standard. The drying chamber dries the wafer.

Abstract: A method of manufacturing a polarizing plate includes fabricating a base film, dyeing the base film by using iodine, stretching the base film to form a polarizing film, firstly drying the polarizing film at a first temperature, and secondly drying the polarizing film while sequentially increasing a temperature from the first temperature to a second temperature higher than the first temperature. The polarizing plate and a liquid crystal display including the same are manufactured through the above method.

Abstract: A method includes passing a chemical solution through a metal-ion absorber, wherein metal ions in the metal-ion absorber are trapped by the metal-ion absorber. The chemical solution exiting out of the metal-ion absorber is then used to etch a metal-containing region, wherein the metal-containing region includes a metal that is of a same element type as the metal ions.

Abstract: There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing at least one member selected from an imidazolium halide having an alkyl group containing 12, 14 or 16 carbon atoms, a pyridinium halide having an alkyl group containing 14 or 16 carbon atoms, an ammonium halide having an alkyl group containing 14, 16 or 18 carbon atoms, a betaine compound having an alkyl group containing 12, 14 or 16 carbon atoms, and an amine oxide compound having an alkyl group containing 14, 16 or 18 carbon atoms, and a method for producing a fine metal structure using the same.

Abstract: Methods and apparatus for isotropically etching a metal from a work piece, while recovering and reconstituting the chemical etchant are described. Various embodiments include apparatus and methods for etching where the recovered and reconstituted etchant is reused in a continuous loop recirculation scheme. Steady state conditions can be achieved where these processes are repeated over and over with occasional bleed and feed to replenish reagents and/or adjust parameters such as pH, ionic strength, salinity and the like.

Abstract: A method is provided for reformulating a chemical mechanical planarization (CMP) slurry for use in conjunction with a CMP tool having an active cycle during which the tool is being used to planarize a substrate, and a rinse cycle during which the tool is being rinsed. The method comprises (a) receiving a feed stream from the CMP tool, at least a portion of the feed stream comprising abrasive particles disposed in a liquid medium; (b) during at least a portion of the rinse cycle, sending the feedstream received from the CMP tool to a first location; and (c) during at least a portion of the active cycle, sending the feedstream received from the CMP tool to a second location where the feedstream undergoes processing to reformulate the slurry.

Abstract: Described herein are various systems and methods for using acidic media to enhance the surface characteristics of glass articles while reducing the adverse effects of precipitate/sludge formation. The systems and methods generally implement a precipitation-capturing device that is configured to 1) permit formation of sludge thereon and 2) reduce formation of the sludge on other solid surfaces involved in the systems and methods.

Abstract: A chemical treatment apparatus and a method for performing a chemical treatment of a wafer, etc., by supplying a chemical via a cell. The apparatus includes a cylindrical inner cell and a cylindrical outer cell with open ends disposed at an outer circumference of the inner cell. The outer cell is axially movable to vary the width of a slit formed between a bottom end of the outer cell and a top surface of the substrate-holding means by the axial movement, thereby adjusting the discharge rate of the chemical and varying the pressure of the chemical.

Abstract: A tool and method is provided for mixing multiple components and feeding a single blend of the multiple components into the tool. The method includes adjusting a concentration of etchant solution. The method includes determining an etch target for each batch of wafers of a plurality of batches of wafers entering an etch chamber of a wafer processing tool. The method further includes adjusting a concentration of 40% NH4F to 49% HF for the each batch of wafers of the plurality of batches of wafers entering the wafer processing tool during a single run.

Abstract: A method for renewing an organic solvent includes an ultraviolet irradiation step in which an organic solvent containing a resin is irradiated with ultraviolet rays so as to enhance the ability of the organic solvent to dissolve the resin. A method for using an organic solvent and a method for producing an inkjet recording head utilize the method for renewing an organic solvent.

Abstract: A substrate processing apparatus comprising a substrate holding rotating mechanism, a process liquid supply mechanism having a nozzle for dispensing a process liquid toward a principal face of the substrate, a processing liquid reservoir for holding sufficient process liquid to form a liquid film covering the whole principal face of the substrate, a liquid film forming unit for forming the liquid film by supplying the process liquid onto the principal face of the substrate in a single burst, and a control unit for controlling the liquid film forming unit and the process liquid supply mechanism such that the process liquid is dispensed from the process liquid nozzle toward the principal face of the substrate after formation of the liquid film covering the whole area of the principal face of the substrate by the liquid film forming unit.

Abstract: A method for refreshing an acid bath solution includes determining a concentration of phosphoric acid in the acid bath solution and determining a concentration of hydrochloric acid in the acid bath solution. The method further includes calculating a volume of phosphoric acid to add to the acid bath solution to achieve a predetermined concentration of phosphoric acid in the acid bath solution. In addition, the method includes calculating a volume of hydrochloric acid to add to the acid bath solution with the volume of phosphoric acid to increase the acid bath solution to a predetermined volume, and adding the volume of phosphoric acid and the volume of hydrochloric acid to the acid bath solution.

Abstract: A method and system for tunable removal rates and selectivity of materials during chemical-mechanical polishing using a chemical slurry or solution with increased dissolved oxygen content. The slurry can optionally include additives to improve removal rate and/or selectivity. Further selectivity can be obtained by varying the concentration and type of abrasives in the slurry, using lower operating pressure, using different pads, or using other additives in the dispersion at specific pH values.

Abstract: According to one embodiment, an etching method includes: supplying an etching-resistant material; and etching the silicon nitride film. The supplying includes supplying the etching-resistant material to a processing surface including a surface of a silicon nitride film and a surface of a non-etching film, the non-etching film including a material different from the silicon nitride film. The etching includes etching the silicon nitride film using an etchant in a state of the etching-resistant material being formed relatively more densely on the surface of the non-etching film than on the surface of the silicon nitride film.

Abstract: Methods and apparatus for isotropically etching a metal from a work piece, while recovering and reconstituting the chemical etchant are described. Various embodiments include apparatus and methods for etching where the recovered and reconstituted etchant is reused in a continuous loop recirculation scheme. Steady state conditions can be achieved where these processes are repeated over and over with occasional bleed and feed to replenish reagents and/or adjust parameters such as pH, ionic strength, salinity and the like.

Abstract: The invention relates to a method for in-line measuring the active KOH concentration in a KOH etching process in which process silicon hydroxide is produced by a reduction reaction according to the formula: 2K+ (aq.)+2OH? (aq.)+2H2O+Si?2K+ (aq.)+H2SiO42? (aq.)+2H2 (g). The total concentration of KOH bath is measured by using a refractometer and the measurement result is corrected by the estimated K2H2SiO4 concentration.

Abstract: A method is provided for reformulating a chemical mechanical planarization (CMP) slurry for use in conjunction with a CMP tool having an active cycle during which the tool is being used to planarize a substrate, and a rinse cycle during which the tool is being rinsed. The method comprises (a) receiving a feed stream from the CMP tool, at least a portion of the feed stream comprising abrasive particles disposed in a liquid medium; (b) during at least a portion of the rinse cycle, sending the feedstream received from the CMP tool to a first location; and (c) during at least a portion of the active cycle, sending the feedstream received from the CMP tool to a second location where the feedstream undergoes processing to reformulate the slurry.

Abstract: Disclosed herein are methods of controlling the etching of a layer of silicon nitride relative to a layer of silicon dioxide. In one illustrative example, the method includes providing an etch bath that is comprised of an existing etchant adapted to selectively etch silicon nitride relative to silicon dioxide, performing an etching process in the etch bath using the existing etchant to selectively remove a silicon nitride material positioned above a silicon dioxide material on a plurality of semiconducting substrates, determining an amount of the existing etchant to be removed based upon a per substrate silicon loading of the etch bath by virtue of etching the plurality of substrates in the etch bath and determining an amount of new etchant to be added to the etch bath based upon a per substrate silicon loading of the etch bath by virtue of etching the plurality of substrates in the etch bath.

Abstract: A method is provided for reformulating a chemical mechanical planarization (CMP) slurry for use in conjunction with a CMP tool having an active cycle during which the tool is being used to planarize a substrate, and a rinse cycle during which the tool is being rinsed. The method comprises (a) receiving a feed stream from the CMP tool, at least a portion of the feed stream comprising abrasive particles disposed in a liquid medium; (b) during at least a portion of the rinse cycle, sending the feedstream received from the CMP tool to a first location; and (c) during at least a portion of the active cycle, sending the feedstream received from the CMP tool to a second location where the feedstream undergoes processing to reformulate the slurry.

Abstract: An apparatus for etching a substrate includes (a) a nozzle system including at least one nozzle through which acid solution containing at least hydrofluoric acid is sprayed onto the substrate, (b) a mover which moves at least one of the nozzle system and the substrate relative to the other in a predetermined direction in such a condition that the substrate and the nozzle system face each other, (c) a filter system which filters off particles out of the acid solution having been sprayed onto the substrate, and (d) a circulation system which circulates the acid solution having been sprayed onto the substrate, to the filter system, and further, to the nozzle system from the filter system.

Abstract: A method and apparatus for performing treatment of substrates with a treating liquid. A first storage unit stores an initial life count specifying an allowable number of treatments of substrates to be carried out with treating liquid after an entire liquid replacement with a new supply of the treating liquid; a second storage device stores a normal life count specifying an allowable number of treatments to be carried out with the treating liquid after reaching the initial life count and after a partial liquid replacement; and a control device repeats treatment of the substrates after the entire liquid replacement until the initial life count is reached; and after the initial life count has been reached and the partial liquid replacement has been made, repeats treatment of the substrates until the normal life count is reached, and makes the partial liquid replacement each succeeding time the normal life count is reached.

Abstract: Diamond electrodes with improved adhesion of the diamond layer to the electrode are produced by sandblasting a surface of the electrode body, and then non-oxidatively etching the roughened (sandblasted) surface so as to remove at least 5 ?m of material from under the roughened surface. By removing at least 5 ?m of material, the sand particulates in the surface of the electrode body are eliminated, and damage in the form of cracks in the electrode body which result from sandblasting is reduced or eliminated, and further, a surface metal oxide coating is not created. All of these contribute to preparing a surface where spalling of the diamond layer is less likely to occur. Concentrated phosphoric acid is an exemplary non-oxidative etchant used in the process.

Abstract: Methods, apparatus, and systems are provided for efficiently reclaiming solvents used to clean surfaces of semiconductor wafers, etc. More particularly, embodiments of the present invention provide an in-situ reclaim approach that utilizes condensing mechanisms to reclaim evaporated solvent components. In these embodiments, the condensing can occur within a proximity head itself and/or along a vacuum line running from the proximity head to a vacuum tank. Other embodiments of the present invention provide an in-situ reclaim approach that prevents the evaporation of solvents at the onset by maintaining appropriate equilibrium gas phase concentrations between the liquid chemistries and gases used to process wafer surfaces.

Abstract: The etching processing method is characterized in that, when performing an etching processing on a resin member by using a desmear liquid containing an alkaline permanganate etching liquid, the etching processing is performed by dipping the resin member into the desmear liquid of which an etching rate for a resin forming the resin member is adjusted by using at least one of an accelerator for accelerating the etching rate of the desmear liquid and a suppressor for suppressing the etching rate.

Abstract: An etching and recovery method is described, wherein articles made of copper are etched with an acid aqueous solution of etching chemicals containing Cu2+ for oxidizing Cu0 to Cu+, chloride ions, oxidizing agent which oxidizes Cu+ to Cu2+, and pH-adjusting hydrochloric acid. The technical problem to be solved is to make it possible to circulate the etching solution between the etching process and the recovery process during the recovery of used etching solution in such a manner that a closed circuit can be maintained between the processes.

Abstract: Methods and apparatus for recovery and reuse of reagents are provided herein. In some embodiments, a system for processing substrates may include a process chamber for processing a substrate; a reagent source coupled to the process chamber to provide a reagent to the process chamber; and a reagent recovery system to collect, and at least one of purify or concentrate the reagent recovered from an effluent exhausted from the process chamber. In some embodiments, a method for recovering unreacted reagent may include providing reagent from a reagent source to a process chamber; exposing a substrate disposed in the process chamber to the reagent, forming an effluent; exhausting the effluent from the process chamber; and recovering unreacted reagent from the effluent in a reagent recovery system.

Abstract: An apparatus and method for treating an etching solution, where the replacement frequency of the etching solution is reduced, while the inclusion of impurities in the treated etching solution is prevented. An apparatus for treating an etching solution in order to reuse the etching solution used in etching treatment of silicon, where the apparatus includes: membrane separation means 3 which performs membrane separation treatment on the etching solution supplied from an etching bath 2; and circulating means 6 which circulates a permeated solution supplied from the membrane separation means 3 to the etching bath 2. The membrane separation means 3 includes a UF membrane module 4 and an NF membrane module 5. Alkaline and organic substances may be added to the etching solution supplied from the membrane separation means 3.

Abstract: According to one embodiment, a solid removal process in a filter and a positive metal ion removal process in a positive metal ion-exchange resin column are performed sequentially through an etching acid waste liquid disposal circulation flow channel, the solid removal process is performed on an upstream side of the positive metal ion removal process, furthermore after the positive metal ion removal process, a negative metal ion removal process removing at least B using a chelate forming fiber or a chelate forming resin is performed on a downstream side of the etching acid waste liquid disposal circulation flow channel, thereby an etching acid waste liquid is recycled sequentially through the etching acid waste liquid disposal circulation flow channel.

Abstract: A method is provided for reformulating a chemical mechanical planarization (CMP) slurry for use in conjunction with a CMP tool having an active cycle during which the tool is being used to planarize a substrate, and a rinse cycle during which the tool is being rinsed. The method comprises (a) receiving a feed stream from the CMP tool, at least a portion of the feed stream comprising abrasive particles disposed in a liquid medium; (b) during at least a portion of the rinse cycle, sending the feedstream received from the CMP tool to a first location; and (c) during at least a portion of the active cycle, sending the feedstream received from the CMP tool to a second location where the feedstream undergoes processing to reformulate the slurry.

Abstract: A system (FIG. 5) and methods for selectively etching silicon nitride in the presence of silicon oxide that provide high selectivity while stabilizing silicon oxide etch rates. The invention comprises a processing chamber (10), dispense lines (20, 21, 22), feed lines (30, 31, 32), a recirculation line (40), a process controller (200), a concentration sensor (50), a particle counter (55), and a bleed line (90). The invention dynamically controls the concentration ratio of the components of the etchant being used and/or dynamically controls the particle count within the etchant during the processing of the at least one substrate. As a result etchant bath life is increased and etching process parameters are more tightly controlled.

Abstract: The present invention provides a regeneration process of the etching solution for the silicon nitride film, applying phosphoric acid aqueous solution, wherein multiple numbers of filters are connected to the piping path of etching solution extracted from the etching tank by switching alternately in parallel or in series; in both cases that said multiple numbers of filters are connected in parallel or in series, said extracted etching solution being supplied to a filter with a filter element of a high silicon removal rate of silicon compounds with already deposited silicon compounds, thus maintaining a high silicon removal rate of silicon compounds.

Abstract: Methods and apparatus for isotropically etching a metal from a work piece, while recovering and reconstituting the chemical etchant are described. Various embodiments include apparatus and methods for etching where the recovered and reconstituted etchant is reused in a continuous loop recirculation scheme. Steady state conditions can be achieved where these processes are repeated over and over with occasional bleed and feed to replenish reagents and/or adjust parameters such as pH, ionic strength, salinity and the like.

Abstract: An etching and recovery method is described, wherein articles made of copper are etched with an acid aqueous solution of etching chemicals containing Cu2+ for oxidising Cu0 to Cu+, chloride ions, oxidising agent which oxidises Cu+ to Cu2+, and pH-adjusting hydrochloric acid. The technical problem to be solved is to make it possible to circulate the etching solution between the etching process and the recovery process during the recovery of used etching solution in such a manner that a closed circuit can be maintained between the processes.

Abstract: Core rods or other glass components associated with optical fiber preforms are cleaned by loading them into a number of first sleeves, and partially obstructing entrance and exit ends of the sleeves to retain the components. The sleeves are contained inside a second sleeve so that the entrance ends of the first sleeves face an entrance end of the second sleeve. A fluid delivery system supplies cleaning fluids to the entrance end of the second sleeve, so that the fluids enter the first sleeves and contact exposed surfaces of the loaded components. The fluids leave the exit ends of the first sleeves and purge from an exit end of the second sleeve. Separators may be placed between the components in the first sleeves to enhance cleaning action and to cushion adjacent end faces of the components. Cleaned components may be unloaded from the first sleeves without risk of contamination.

Abstract: In a reaction chamber (20), a used alkaline permanganate etching solution (12) is accommodated and an alkaline earth hydroxide (14) such as calcium hydroxide is added in the reaction chamber, a liquid inside of the reaction chamber is agitated, the liquid is exhausted from a side portion or a top portion of the reaction chamber through a filter (28), a precipitate (26) adhered to the filter is scraped off, and a precipitate containing a hardly soluble or insoluble matter incapable of passing through the filter and accumulated on a bottom portion of the reaction chamber is exhausted from the reaction chamber.

Abstract: A wafer processing apparatus 100 is configured so that the number of repeated cycles of supplying pure water for maintaining the etching rate of phosphoric acid 10 to be high for the complete etching of the target film and halting the supply for each lot of wafers during a predetermined period of time, and, when the number of cycles falls outside a preset range of cycle counts, a notice to that effect is provided. Consequently, a lot of wafers having defective etching can be found with good accuracy, as well as defective etching being able to be prevented from occurring in subsequent lots of wafers.

Abstract: The present invention provides etching solution for alloy steel such as stainless steel using ferric chloride, in which ferric chloride can be regenerated without carrying out an operation of removing chromium and nickel and while suppressing an increase in the amount of the etching solution, and an etching method using the etching solution. The etching solution is etching solution comprising ferric chloride and chromium ions or nickel ions, or etching solution comprising ferric chloride, chromium ions and nickel ions and comprising each type of metal ions in a metal composition ratio approximately equal to a metal composition ratio in alloy steel to be etched. The etching method is a method for etching alloy steel with etching solution comprising ferric chloride and comprising each type of metal ions in a metal composition ratio approximately equal to a metal composition ratio in the alloy steel.

Abstract: The present invention is directed to a microetching composition comprising a source of cupric ions, acid, a nitrile compound, and a source of halide ions. Other additive, including organic solvents, a source of molybdenum ions, amines, polyamines, and acrylamides may also be included in the composition of the invention. The present invention is also directed to a method of microetching copper or copper alloy surfaces to increase the adhesion of the copper surface to a polymeric material, comprising the steps of contacting a copper or copper alloy surface with the composition of the invention, and thereafter bonding the polymeric material to the copper or copper alloy surface.

Abstract: An etchant for copper and copper alloys, includes an aqueous solution containing: 14 to 155 g/liter of cupric ion source in terms of a concentration of copper ions; 7 to 180 g/liter of hydrochloric acid; and 0.1 to 50 g/liter of azole, the azole including nitrogen atoms only as heteroatoms residing in a ring. A method for producing a wiring by etching of copper or copper alloys, includes the step of: etching a portion of a copper layer on an electrical insulative member that is not covered with an etching resist using the above-described etchant so as to form the wiring. Thereby, a fine and dense wiring pattern with reduced undercut can be formed.

Abstract: Mutually different plural kinds of processing liquid are sequentially supplied to a gap space in which a substrate is arranged to perform a wet processing to the substrate with respect to each processing liquid. Further, the processing liquid used in the wet processing is sequentially released from the communicating portion upon execution of each wet processing. The liquid retrieval tanks are selectively positioned at a retrieval position corresponding to the kind of processing liquid released from the communicating portion by relatively moving the processing unit and the liquid retrieval unit. The liquid retrieval unit is separated from the processing unit and is arranged below the processing unit. The processing liquid is released from the communicating portion of the processing unit to below the gap space downwards vertically.

Abstract: An etching apparatus of a semiconductor processing apparatus and the method thereof for recycling etchant solutions are provided. The method is suitable for a processing apparatus which provides an etchant solution on a wafer so as to perform an etching process. After the etching process is completed, a water solution is added to the etchant solution for maintaining a water content thereof. Then, the mixed etchant solution is recycled.

Abstract: There is a method of capturing, removing or collecting the particulate matter from a fluid containing a toxic liquid reaction and particulate matter produced from the reaction. The method includes partly or completely disposing a screen into the toxic fluid. Mixing the toxic fluid allowing the particulate matter to contact the screen. Moving the screen to capture the particulate matter on the screen. Removing the particulate matter from the screen by washing or scraping. There is also a cleaning apparatus to capture, remove or collect particulate matter from a toxic fluid. A cleaning apparatus contains at least a screen and a structure securing the screen. The cleaning apparatus can optionally include a scraping or washing means, a drive means, a flow inducer and a housing structure.

Abstract: The present invention provides a regeneration process of the etching solution for the silicon nitride film, applying phosphoric acid aqueous solution, wherein multiple numbers of filters are connected to the piping path of etching solution extracted from the etching tank by switching alternately in parallel or in series; in both cases that said multiple numbers of filters are connected in parallel or in series, said extracted etching solution being supplied to a filter with a filter element of a high silicon removal rate of silicon compounds with already deposited silicon compounds, thus maintaining a high silicon removal rate of silicon compounds.

Abstract: A method for sidewall etching includes providing a substrate having a trench defined therein, with the trench having fill material disposed over a bottom thereof, along a sidewall thereof, and at the trench opening. The fill material along the sidewall of the trench and at the trench opening is removed without removing the fill material disposed over the bottom of the trench. The fill material along the sidewall and at the trench opening may be removed without removing the fill material disposed over the bottom of the trench by inhibiting a reaction between an etchant and the fill material over the bottom of the trench. The reaction between the etchant and the fill material may be inhibited by causing an air bubble to form at the bottom of the trench. The air bubble may be formed by inverting the substrate, and immersing the inverted substrate in an etchant.

Abstract: The present invention generally relates to a copper metal recovery system, able to integrate with a waste treatment system of a circuit board manufacture plant, includes a stirring unit, a crystallization unit and a pressure filtering unit. More than 2 parts of weight of acidic copper-containing etching process effluent, less than 1 parts of weight of copper-containing slurry, and less than 1 part of weight of waste mixture of an acidic copper-containing photolithography effluent and an acidic frame etching effluent are charged into the stirring unit to conduct decomposition. Alkaline hydroxide reacts with decomposition products in the crystallization unit. The temperature of the crystallization unit is at least 80° C. The pressure filtering unit outputs a copper hydroxide solution or a copper oxide solution.

Abstract: A system (FIG. 5) and methods for selectively etching silicon nitride in the presence of silicon oxide that provide high selectivity while stabilizing silicon oxide etch rates. The invention comprises a processing chamber (10), dispense lines (20, 21, 22), feed lines (30, 31, 32), a recirculation line (40), a process controller (200), a concentration sensor (50), a particle counter (55), and a bleed line (90). The invention dynamically controls the concentration ratio of the components of the etchant being used and/or dynamically controls the particle count within the etchant during the processing of the at least one substrate. As a result etchant bath life is increased and etching process parameters are more tightly controlled.

Abstract: A polishing method includes a slurry adjusting step for adjusting a polishing slurry containing silica particles so that the number of silica particles having a composition ratio of Si/O of 50–60 wt %/40–50 wt %, a modulus of elasticity of 1.4×1010 Pa or higher and a particle size of 1 ?m or larger is 3000 pcs/ml or less. A semiconductor wafer is polished using the polishing slurry adjusted in the slurry adjusting step.