Abstract: A regeneration process is disclosed for an etching solution composed of a phosphoric acid solution and used in etching silicon nitride films in an etch bath. As a result of the etching, the etching solution contains a silicon compound. According to the regeneration process, the etching solution with a silicon compound contained therein is taken out of the etch bath. Water is then added to the taken-out etching solution to lower a concentration of phosphoric acid in the etching solution to 80 to 50 wt. %. By the lowing of the concentration of phosphoric acid, the silicon compound is caused to precipitate. The thus-precipitated silicon compound is removed from the etching solution. An etching process making use of the regeneration process and an etching system suitable for use in practicing the regeneration process and etching process are also disclosed.

Abstract: A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.

Abstract: A device and process for the wet-chemical treatment of silicon using an etching liquid that contains water, nitric acid and hydrofluoric acid. The etching liquid is activated by introducing nitrogen oxide (NOx) into the etching liquid, before being used for the wet-chemical treatment of silicon. The device consists of a first vessel in which silicon is subjected to a wet-chemical treatment with the aid of an etching liquid, a second vessel in which fresh etching liquid is held ready, and a connecting line between the first vessel and the second vessel, through which nitrogen oxides (NOx) formed in the first vessel during the wet-chemical treatment are passed to the second vessel.

Abstract: A lead-containing copper-based alloy is immersed into a weak acidic or neutral etching solution having a buffer effect which is formed by adding an organic acid into a complexing agent having a high ability to form a complexing ion with lead, and lead particles present on the surface of the lead-containing copper-based alloy are then removed. The complexing agent is one of an organic ammonium salt such as ammonium acetate, or ammonium citrate, or may be an organic sodium salt such as sodium acetate, sodium tartrate, and sodium citrate. Preferably, an immersion temperature of the alloy to the etching solution falls within a range of from 10 to 50° C. The etching solution is agitated with oxygen or a gas containing oxygen blown thereinto during the immersion of the alloy into the etching solution. An extremely low voltage of ?0.3 to +0.2 V vs. NHE is applied from outside to the lead-containing copper-based alloy as an anode.

Abstract: Embodiments in accordance with the present invention provide for removing organic materials from substrates, for example substrates employed in the fabrication of integrated circuits, liquid crystal displays and the like. Such embodiments also provide for forming self-limiting oxide layers on oxidizable materials disposed on such substrates where such materials are exposed to the methods of the present invention. The methods of the present invention provide for contacting substrates with a solution of ozone, water and a surfactant, the solution being effective for removing organic materials and forming self-limiting oxide layers on oxidizable materials.

Abstract: In a method for photo-electrochemical etching of a semiconductor sample, the semiconductor sample is brought in contact with an electrolyte liquid. The contact area formed thereby is illuminated through the electrolyte liquid with UV light. The photo-current created by UV light irradiation at the contact area is measured. To increase the etching quality, a jet of fresh electrolyte liquid is repeatedly applied to the contact area. A device for carrying out the method includes a container to be filled with an electrolyte liquid, a UV source for illuminating the semiconductor sample with UV light through the electrolyte liquid, and a measuring instrument for measuring the photo-current created during UV light irradiation of the contact area. Further provided are an inlet for supplying fresh electrolyte liquid, directed towards the semiconductor sample, and a device attached to the inlet for repeated production of electrolyte fluid jets, directed towards the semiconductor sample.

Abstract: A drained water recovery system of a process device and recovering method thereof is provided. The recovering method includes using a conductivity meter to measure the conductivity of the drained water so that the drained water with different degrees of conductivity are channeled to different pipelines. Furthermore, another conductivity meter and a total organic carbon analyzer together with an interim tank liquid level controller sorts out the recovered water. Thereafter, according to the properties of the recovered water, the drained water is re-used to improve recycling efficiency.

Abstract: An organic solvent is separated from a waste stream containing supercritical CO2, an organic solvent and etchant contaminants. The process includes separating the supercritical CO2 by subjecting the waste stream to elevated temperature and/or reduced pressure to thereby obtain a first composition containing the supercritical CO2 and a second composition containing the organic solvent and being substantially free of the supercritical CO2; and then removing non-volatile etching contaminants from the second stream search as by at least one of the following: evaporation; distillation; filtration; centrifugation; and settling.

Abstract: The present invention teaches a method and apparatus for removing sacrificial materials in fabrications of microstructures using one or more selected spontaneous vapor phase etchants. The selected etchant is fed into an etch chamber containing the microstructure during each feeding cycle of a sequence of feeding cycles until the sacrificial material of the microstructure is exhausted through the chemical reaction between the etchant and the sacrificial material. Specifically, during a first feeding cycle, a first amount of selected spontaneous vapor phase etchant is fed into the etch chamber. At a second feeding cycle, a second amount of the etchant is fed into the etch chamber. The first amount and the second amount of the selected etchant may or may not be the same. The time duration of the feeding cycles are individually adjustable.

Abstract: A substrate processing apparatus for supplying a treatment liquid onto the surface of a substrate to treat the same. This apparatus is provided with: a spin chuck for holding and rotating a substrate; a nozzle for supplying a treatment liquid to the substrate held by the spin chuck; a circulating passage arranged such that the treatment liquid supplied to the substrate from the nozzle and used for substrate treatment is circulated to the nozzle and reutilized for substrate treatment; a metal contamination amount measuring device for measuring the metal contamination amount in the treatment liquid passing through the circulating passage; and a judgment processing unit for judging whether or not the value measured by the metal contamination amount measuring device has exceeded a predetermined set value.

Abstract: A method of removing photoresist from semiconductor wafers through the use of a sparger plate. According to the inventive method, at least one semiconductor wafer is positioned in a process tank above the sparger plate. A mixture of ozone and deionized water is introduced into the process tank at a position below the sparger plate. The mixture of ozone and deionized water is then introduced across the wafer via the sparger plate at an increased flow velocity while the wafer is submerged in the mixture of deionized water and ozone.

Abstract: An etchant and an etching method that contribute to prevention of metal contamination of a semiconductor silicon wafer, and a semiconductor silicon wafer in which metal contamination is extremely reduced, are provided. The etchant according to the present invention is prepared by immersing stainless steel in an alkali aqueous solution for not less than 10 hours. In the etching method according to the present invention, a semiconductor silicon wafer is etched by using the etchant. Thereby, the semiconductor silicon wafer according to the present invention, in which metal contamination is extremely reduced, is obtained.

Abstract: A regeneration process is disclosed for an etching solution composed of a phosphoric acid solution and used in etching silicon nitride films in an etch bath. As a result of the etching, the etching solution contains a silicon compound. According to the regeneration process, the etching solution with a silicon compound contained therein is taken out of the etch bath. Water is then added to the taken-out etching solution to lower a concentration of phosphoric acid in the etching solution to 80 to 50 wt. %. By the lowing of the concentration of phosphoric acid, the silicon compound is caused to precipitate. The thus-precipitated silicon compound is removed from the etching solution. An etching process making use of the regeneration process and an etching system suitable for use in practicing the regeneration process and etching process are also disclosed.

Abstract: In a method of treating substrates a treatment fluid is fed into a collection vessel after treatment, at least a portion of the treatment fluid is withdrawn from the collection vessel and returned to respective reservoir and the collection vessel is rinsed before receiving another treatment fluid.

Abstract: In a process using a hot phosphoric acid etchant (12) to etch silicon nitride on a semiconductor wafer (15) submerged in a tank (11) of the etchant (12), a recirculating path is established for the etchant (12). A porous filter (35) is coated with silicon nitride and installed in the recirculating path. As the etchant (12) in the recirculating path flows through the porous filter (35), the silicon nitride on the porous filter (35) dissolves into the etchant (12). In the tank (11), the silicon nitride dissolved in the etchant (12) significantly suppresses the etch of silicon dioxide on the semiconductor wafer (15), thereby enhancing the etch selectivity of the process. Monitoring and maintaining the concentration of the silicon nitride in the etchant (12) stabilizes the etch selectivity of the process.

Abstract: A method for clean processing wherein an object and a high pressure nozzle are disposed a specific distance apart from each other inside a washing tank containing only ultra-pure water, an ion exchange material or catalyst material that increases the amount of hydroxide ions is provided between the processing surface of said workpiece and the distal end of the high pressure nozzle facing said surface, a voltage is applied using the high pressure nozzle as the cathode and the object as the anode and the hydroxide ions produced from the ultra-pure water are supplied to the surface of the object.

Abstract: Deposit is removed by supplying chemical solution on a semiconductor substrate with the semiconductor substrate kept rotating. Next, the chemical solution supply is shut off while rotation of the semiconductor substrate being maintained, which allows to scatter the chemical solution on the semiconductor substrate. Next, water is supplied on the semiconductor substrate with the semiconductor substrate kept rotating. This results in washing the semiconductor substrate. The water supply is shut off while rotation of the semiconductor substrate being maintained, which allows to scatter the water on the semiconductor substrate. Then, these processes are repeated depending on a degree of cleanness on a front face of the semiconductor substrate. In this removing method, the chemical solution and the water are hardly mixed so as to prevent corrosion and elution of a wiring material.

Abstract: A slurry collection device 1 includes a ring-shaped barrier member 2 provided around a turntable T of a polishing machine E and a ring-shaped slurry collection container 3 provided around the barrier member 2. The turntable T is connected to an upper end of a main rotation shaft T1 that sticks out from a bottom portion of a sink S of the polishing machine E and is lifted from the bottom portion of the sink S. The slurry collection device 1 of the present invention is inserted between the turntable T and the sink S.

Abstract: A process for the wet chemical treatment of a semiconductor wafer in a vessel, in which the semiconductor wafer is brought into contact with a liquid in which very small gas bubbles are dispersed. Two circuits are set up for conveying the liquid, with a first circuit between a reservoir and the vessel, for conveying the liquid from the reservoir to the vessel; and with a second circuit from the reservoir back to the reservoir, in order to enrich the liquid with a gas on the way back to the reservoir, so that the gas bubbles can form.

Abstract: A method for rejuvenating a polishing slurry that has been used for a chemical-mechanical polishing process includes the steps of: recovering the polishing slurry; and re-dispersing abrasive grains contained in the polishing slurry recovered. Specifically, the abrasive grains may be re-dispersed by adding a dispersant or applying an electromagnetic field or ultrasonic radiation to the polishing slurry recovered.

Abstract: The invention encompasses polishing systems for polishing semiconductive material substrates, and encompasses methods of cleaning polishing slurry from semiconductive substrate surfaces. In one aspect, the invention includes a method of cleaning a polishing slurry from a substrate surface comprising: a) providing a substrate surface having a polishing slurry in contact therewith; b) providing a liquid; c) injecting a gas into the liquid to increase a total dissolved gas concentration in the liquid; and d) after the injecting, providing the liquid against the substrate surface to displace the polishing slurry from the substrate surface.

Abstract: A system for conditioning an alkaline etching solution for reducing contamination in a silicon wafer etching process. The system includes a conditioning tank for mixing a conditioned alkaline etching solution, the conditioned alkaline etching solution including a conditioning chemical; a conditioning chemical introduction system configured to add the conditioning chemical to the conditioning tank; and a buffer tank for storing the conditioned basic etching solution before using the conditioned alkaline etching solution in an etching process.

Abstract: Finishing the end of a plastic optical fiber by a device having a semi-rigid or rigid base, a solvent liner for absorbing and holding a solvent, and a re-attachable pull-off cover for keeping the solvent from evaporating when not in use. To polish the end of a plastic optical fiber, the cover is peeled off, the end of the optical fiber is contacted with the solvent liner such that solvent is transferred to the end of the optical fiber, the cover may be reapplied (using a pressure sensitive adhesive integral to either the bottom of the peel-off cover or the top of the liner), the excessive solvent, if any, is removed by using an appropriate swab, and the end of the plastic optical fiber is allowed to return to its normal state. The solvent temporarily dissolves the surface layer of the end of the optical fiber. The resulting surface tension automatically polishes the end of the optical fiber.

Abstract: A method of manufacturing electronic devices, in particular, but not exclusively, semiconductor devices, and apparatus for carrying out such a method, in which method substrates 1, which are provided at a surface 2 with a silicon oxide-containing material 3 to be removed, are subjected, while being divided into successive batches, to a wet treatment in a bath 4 containing a solution 5 of hydrofluoric acid in water. During this wet treatment the conductivity of the solution 5 is monitored and the silicon oxide-containing material 3 is removed, thereby forming ionic components. The monitored conductivity is brought to approximately a desired conductivity at time intervals by adding hydrofluoric acid and/or water to the solution 5 inside the bath 4.

Abstract: An etching system and method. In the method, layers are etched on a plurality of substrates using a single amount of etchant to form a predetermined pattern on each of the layers, wherein an etching period varies according to an accumulated process number of substrates. The system includes an etching equipment including an etching processor for etching layers on a plurality of substrates using a single amount of etchant to form a predetermined pattern on each of the layers, and a loader for temporarily holding cassettes in which the substrates are stored; and a controller for controlling operations of the etching equipment. The etching equipment changes an etching period according to an accumulated process number of the substrates.

Abstract: A method of operating a milling bath wherein a metal workpiece to be milled is immersed in a milling bath containing a milling medium, the metal oxidizing owing to a chemical reaction between the metal and milling medium and being transformed into a soluble complex. The resultant mixture is subjected to a separation process which separates the excess milling medium from the complex, the recovered milling medium being used for the further operation of milling baths and the complex being subjected to a preparation process. A mixture of dissolved complexed metallic ions and milling medium is removed from the milling bath at a concentration of dissolved complexed metallic ions which is far below the saturation limit thereof. The separation process is a nanofiltration process in which the milling medium is separated from the mixture according to the principle of reverse osmosis, the residue simultaneously being concentrated with complexed metallic ions.

Abstract: An etching method and an etching apparatus for applying an etchant containing nitric acid and hydrofluoric acid to silicon to etch the silicon. The etchant used in etching is recovered, and brought into contact with a gas inert to the etchant, whereby the etchant is regenerated. At least a part of the regenerated etchant is reused in etching.

Abstract: An organic solvent is separated from a waste stream comprising hydrofluoric acid, an organic solvent and etchant contaminants. The process comprises separating the hydrofluoric acid by subjecting the waste stream to at least one of the following processes: ion exchange; extraction of the hydrofluoric acid; electrophoresis; converting the hydrofluoric acid to an insoluble salt; to thereby obtain a first composition containing the hydrofluoric acid and a second stream containing the organic solvent and being substantially free of the hydrofluoric acid; and then distilling the second stream to recover the organic solvent free of the etching contaminants.

Abstract: An etching system and method. In the method, layers are etched on a plurality of substrates using a single amount of etchant to form a predetermined pattern on each of the layers, wherein an etching period varies according to an accumulated process number of substrates. The system includes an etching equipment including an etching processor for etching layers on a plurality of substrates using a single amount of etchant to form a predetermined pattern on each of the layers, and a loader for temporarily holding cassettes in which the substrates are stored; and a controller for controlling operations of the etching equipment. The etching equipment changes an etching period according to an accumulated process number of the substrates.

Abstract: Aspects for a decapsulation system and technique are described. In a method aspect, a portable decapsulation system is provided beneath at least one integrated circuit device on a printed circuit board. Package decapsulation of the least one integrated circuit device occurs through acid blasting by the portable decapsulation system. The portable decapsulation system includes a beaker, fuming acid within the beaker, and a sealed fitting for the beaker and holding an electronic device being decapsulated. Capillaries within the sealed fitting through which the fuming acid is released acid blast the electronic device, and a waste tube coupled to the sealed fitting for removal of solid waste during the acid blast.

Abstract: A method of planarizing a semiconductor wafer having a polishing endpoint layer that includes a ligand is disclosed. One step of the method includes polishing a first side of the wafer in order to remove the ligand from the wafer. Another step of the method includes determining that a chelating agent has bound the ligand due to the polishing step removing the ligand of the polishing endpoint layer. The method also includes the step of terminating the polishing step in response to determining that the chelating agent has bound the ligand. A polishing system is also disclosed which detects a polishing endpoint based upon a chelating agent binding a ligand of a polishing endpoint layer of a semiconductor device.

Abstract: The present invention, in one embodiment, provides a method for eliminating agglomerate particles in a polishing slurry. In this particular embodiment, the method is directed to reducing agglomeration of slurry particles within a waste slurry passing through a slurry system drain. The method comprises conveying the waste slurry to the drain, wherein the waste slurry may form an agglomerate having an agglomerate particle size. The method further comprises subjecting the waste slurry to energy emanating from an energy source. The energy source thereby transfers energy to the waste slurry to substantially reduce the agglomerate particle size. Substantially reduce means that the agglomerate is size is reduced such that the waste slurry is free to flow through the drain.

Abstract: A dry solids composition is provided which may be reconstituted into a chemical-mechanical polishing composition comprising no abrasive particles.

Abstract: Disclosed is a process for the surface treatment of an aluminum support for printing plate which comprises a step of brush-graining with an abrasive brush and an abrasive slurry, characterized in that as the abrasive there is used aluminum hydroxide, the aluminum hydroxide which has been used in graining is dissolved in a sodium aluminate solution and the sodium aluminate solution having a raised supersaturation degree, the aluminum hydroxide which has been left undissolved and seed crystal aluminum hydroxide undergo hydrolysis reaction to produce crystalline aluminum hydroxide which is then purified and recovered.

Abstract: A clean, recirculating and processing method which prevents surface contamination of an object, such as a semiconductor, semi-conductor wafer, glass for LCD or magnetic disk is provided which includes covering the front and rear surfaces of an object to be processed with front and rear shielding plates and allows the object to rotate relative to the front and rear shielding plates. The fluid is supplied between the front surface of the object and the front shielding plate allowing the front surface to be processed. The remaining fluid is collected and recirculated between the rear surface of the object and the rear shielding plate allowing the rear surface of the object to be processed. An apparatus for accomplishing the method is also disclosed.

Abstract: A method of formulating a strong oxidizing solution comprising formulating a strong oxidizing solution having from about 2 to about 5 percent PDSA with concentrated sulfuric acid in the ratio of from about 1:8 to about 1:20 parts by volume and storing the strong oxidizing solution in a container having a space over the solution containing one of a vacuum or a non-oxidizing atmosphere inert to the oxidizing solution. The amount of PDSA is preferably about 4 percent by volume and the ratio is preferably about 1:10 parts by volume. The space over the strong oxidizing solution is preferably a vacuum or substantially all nitrogen.

Abstract: A method includes providing at least one wafer having a process layer formed thereon for polishing. The process layer is polished using a first polishing process that is associated with a slurry having a first abrasive particle size. The process layer is polished using a second polishing process that is associated with a slurry having a second abrasive particle size that is different from the first abrasive particle size. A system includes a polishing tool and a process controller. The polishing tool is adapted to receive at least one wafer having a process layer formed thereon for polishing. The polishing tool is adapted to polish the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size. The polishing tool is adapted to polish the process layer using a second polishing process that is associated with a slurry having a second abrasive particle size that is different from the first abrasive particle size.

Abstract: An apparatus for planarizing a semiconductor wafer having a polishing endpoint layer that includes a catalyst material is disclosed. The apparatus is operable to detect the endpoint based upon the chemical slurry whether a catalytic reaction has occurred due to the polishing platen removing a portion of the catalyst material from the wafer.

Abstract: A wafer-processing apparatus is provided which includes an container, a gas-supplying pipe, a pressure-leveling sensor, a controller, and an auto-cleaning device. The container is used for containing an processing solution. The gas-supplying pipe is used for supplying a gas into the container, wherein a pressure of the gas contained in the gas-supplying pipe is relative to a level of the processing solution. The pressure-leveling sensor connected to the gas-supplying pipe is used for detecting a pressure change of the gas contained in the gas-supplying pipe and correspondingly outputting a level signal. The controller electrically connected to the container and the pressure-leveling sensor is used for outputting a discharge signal to control the container to discharge the processing solution after a predetermined amount of wafers has been etched by the processing solution, and controlling an charge valve to charge the container with the processing solution in response to the level signal.

Abstract: Monitoring techniques have been developed for direct/indirect determination of metal etching bath components and for managing their replenishment. The disclosed methods have been successfully employed to make TiW etching a robust process that provides minimized and controlled undercutting of ball limited metallurgy and mechanical reliable C4s. A metal etching solution is monitored and replenished by measuring the sulfate concentration of a hydrogen peroxide, soluble salt, and soluble EDTA salt etchant. Turbidimetric titration conditions are used to measure and compare opaqueness of liquids by viewing light through them and determining how much light is cut off. Additional sulfate is added to maintain the sulfate concentration. Water and/or fresh etchant is added to compensate for evaporation or drag.

Abstract: A resin etching solution containing a hydroxyalkylamine, an alkali metal compound and water, or an aliphatic alcohol, an aliphatic amine, an alkali metal compound and water, and a process for etching a polyimide film containing a resist pattern or metal layer pattern formed on either or both sides using the resin etching solution.

Abstract: In order to reduce pollutants in the waste gas of regeneration plants for spent hydrochloric acid from pickling plants a process is provided, comprising the thermal decomposition of iron chloride in the spent pickling acid to iron oxide and gaseous hydrochloric acid, wherein to the spent pickling acid at least one compound is admixed which contains nitrogen having a low oxidation number, for example ammonium compounds, ammonia, urea or amides.

Abstract: An apparatus and method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of nanoasperities which are particles having an imputed radius (of curvature) of about 0.5 to about 0.1 microns and sufficient resiliency to permanently deform by less than 10% which contact the wafer surface in combination with a reactive liquid solution.

Abstract: An improved silicon nitride etch bath system is provided. The improved etch bath system includes a silicon dioxide condensing system formed of a heat exchanger and a secondary filter. The heat exchanger is provided for removing a small portion of phosphoric acid from an etching bath and for cooling of the same. The secondary filter is used for extracting silicon dioxide particles in the small portion of the phosphoric acid and is operatively connected to the heat exchanger before returning the same to the etching bath. In this manner, the concentration of silicon dioxide in the etching bath will be prevented from being saturated.

Abstract: A photoresist stripper bath includes a filter in a re-circulation line for filtering residual photoresist materials from said bath. The quality of the stripper and the concentration of the photoresist materials are sensed by passing infrared light transversely through the re-circulating line, detecting the intensity of the light passed through the line and comparing the detected level with a threshold value related to the concentration of the photoresist materials in said stripper.

Abstract: A method of purifying an alkaline solution includes dissolving metallic silicon and/or silicon compounds in the alkaline solution and non-ionizing metallic ions in the alkaline solution with reaction products generated when the metallic silicon and/or silicon compounds are dissolved therein. This purifying method is capable of remarkably decreasing metallic ions in the alkaline solution at a low-cost by an easy operation. A method of etching semiconductor wafers includes purifying an alkaline solution by non-ionizing metallic ions in the alkaline solution and etching the semiconductor wafers by using the purified alkaline solution. According to this etching method, the metallic contamination level due to the etching of the semiconductor wafers is greatly decreased, there being neither deterioration in the wafer quality nor deterioration in the characteristic of the semiconductor device.

Abstract: This invention relates to an aqueous etching composition for etching metallic copper comprising(a) an acid,(b) a copper complexing agent,(c) a metal capable of having a multiplicity of oxidation states which is present in one of its higher positive oxidation states and which metal forms a composition soluble salt, and(d) oxygen wherein the concentration of the higher positive oxidation state metal in the composition is greater than about 4 grams/liter of composition.The invention also relates to a process for etching metallic copper comprising contacting the surface of a copper substrate with the aqueous etching compositions of the invention. A method of regenerating a spent aqueous etching composition of the invention which has been used for etching metallic copper also is described.

Abstract: A process for compensating for degradation of a first polishing pad during polishing on the first polishing pad of a plurality of substrate surfaces that have substantially similar film stacks is described. The process includes: (a) characterizing a test polishing pad, which characterization includes determining changes in film removal rates of layers of the film stack during polishing of the plurality of the substrate surfaces on the test polishing pad; (b) polishing a first substrate surface on the first polishing pad, which is substantially similar to the test polishing pad, under a first set of polishing conditions; and (c) polishing a second substrate surface on the first polishing pad under a second set of polishing conditions. A difference between the second set of polishing conditions and the first set of polishing conditions is designed to minimize the changes in the film removal rates of the layers of the film stack and thereby compensate for degradation of the first polishing pad.

Abstract: The invention relates to a process for working up charged aqueous solutions, more especially etching solutions, which contain ammonia, at least one ammonium salt and metal ions in dissolved form and which accumulate in the treatment of substrates containing valuable metals, more especially copper-containing electronic sub-assemblies by contacting the aqueous solution with an organic water-immiscible extractant in one or more extraction stages to form an organic phase containing valuable metals and an aqueous phase, (b) washing the organic phase with a water-containing liquid in one or more successive washing stages wherein the water-containing liquid has a pH above 6.5 in the first washing stage and after said washing stage contacting the washing water before reuse with an organic extraction solution, and (c) conducting one or more stripping stages to transfer the valuable metals from the organic phase to an aqueous phase.

Abstract: A etcher (10) has an inner chamber (22) that is in communication with a collection chamber (17). A cover (33) is made from a substrate (11) and an outer housing (34). The cover (33) is attached to the etcher (10) so that the substrate (11) is suspended over the inner chamber (22). A recirculating system (29) is used to pass an etchant through a filter, into the inner chamber (22), across the substrate (11), into the collection chamber (17), and into a reservoir.