Abstract: Methods of forming vias in a glass-based article by laser-damage-and-etch processes including etching solutions having positive charge organic molecules are disclosed. In some embodiments, a method of forming a via in a glass-based article includes forming a damage track through a bulk of the glass-based article extending from a first surface of the glass-based article to a second surface of the glass-based article, and applying an etching solution to the glass-based article to form the via. The etching solution includes at least one acid and a positive charge organic molecule. An etch rate at the first surface and the second surface is lower than an etch rate at the damage track.

Abstract: The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films (e.g., photoresist on anti-reflective coatings) on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV or UV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located in the film stack. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.

Abstract: A system includes a chemical storage tank, a pipeline, a pump, a first electrostatic probe, and a control unit. The pipeline is connected to the chemical storage tank. The pump is connected to the pipeline and configured to pump a chemical solution from the chemical storage tank into the pipeline. The first electrostatic probe is coupled to the pump and configured to measure an electrostatic voltage of the pump. The control unit is coupled to the first electrostatic probe and configured to obtain a measurement of an electrostatic voltage from the first electrostatic probe.

Abstract: An aqueous composition comprising: sulfuric acid; a heterocyclic compound; an alkanesulfonic acid; and a peroxide. Said composition being capable of delignifying biomass under milder conditions than conditions under which kraft pulping takes place.

Abstract: A system includes a chemical storage tank, a pipeline, a pump, a first electrostatic probe, and a control unit. The pipeline is connected to the chemical storage tank. The pump is connected to the pipeline and configured to pump a chemical solution from the chemical storage tank into the pipeline. The first electrostatic probe is coupled to the pump and configured to measure an electrostatic voltage of the pump. The control unit is coupled to the first electrostatic probe and configured to obtain a measurement of an electrostatic voltage from the first electrostatic probe.

Abstract: A substrate processing method includes forming a liquid film of an alkaline processing liquid on a substrate by supplying the alkaline processing liquid having a reduced oxygen concentration onto the substrate; and etching the substrate by rotating the substrate while supplying the alkaline processing liquid in a state that the liquid film having a given thickness is formed on the substrate.

Abstract: A resist stripping process liquid including a basic compound containing a nitrogen atom, an organic solvent, and water, the organic solvent including a cyclic amide compound, and the cyclic amide compound including 0.5% by mass or more of a compound represented by the following formula (1), based on the total amount of the process liquid. In formula (1), n represents an integer of 1 to 5, and R represents a C2-C10 organic group.

Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing cobalt (Co) from a semiconductor substrate without substantially forming cobalt oxide by-products.

Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing one or both of titanium nitride (TiN) and cobalt (Co) from a semiconductor substrate without substantially forming a cobalt oxide hydroxide layer.

Abstract: A method for producing a plated shaped structure, includes applying a photosensitive resin composition on a substrate to form a photosensitive resin coating film. The photosensitive resin composition includes: (A) a resin whose solubility in alkali is capable of being increased by an action of an acid; (B) a photoacid generator; and (C) a compound which is capable of being decomposed by an action of an acid to form a primary or secondary amine. The photosensitive resin coating film is exposed to light. The photosensitive resin coating film is developed after the exposing to light to form a resist pattern. A plating process is performed using the resist pattern as a mask.

Abstract: A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask.

Abstract: One of a setting dissolved oxygen concentration and a setting atmosphere oxygen concentration is determined based on a required etching amount. Thereafter, based on the required etching amount and the one of the determined setting dissolved oxygen concentration and setting atmosphere oxygen concentration, the other of the setting dissolved oxygen concentration and the setting atmosphere oxygen concentration is determined. A low oxygen gas whose oxygen concentration is equal or approached to the determined setting atmosphere oxygen concentration flows into a chamber that houses a substrate. Furthermore, an etching liquid whose dissolved oxygen is reduced such that its dissolved oxygen concentration is equal or approached to the determined setting dissolved oxygen concentration is supplied to the entire region of the upper surface of the substrate held horizontally.

Abstract: An etching apparatus includes a substrate holder configured to hold a substrate; a rotation driver configured to rotate the substrate holder around a rotation axis; a liquid discharge unit configured to discharge an etching solution to a peripheral portion of the substrate; and a controller configured to control an operation of the etching apparatus by controlling at least the rotation driver and the liquid discharge unit. The controller controls at least one of a rotational velocity of the substrate, a discharge velocity of the etching solution from the liquid discharge unit or a discharge direction of the etching solution from the liquid discharge unit to etch the substrate under immediate deviation conditions in which the etching solution is deviated from the substrate immediately after the etching solution from the liquid discharge unit lands at a liquid landing point in the peripheral portion of the substrate.

Abstract: A method of manufacturing a device includes exposing at least one of a source/drain contact plug or a gate contact plug to a metal ion source solution during a manufacturing process, wherein a constituent metal of a metal ion in the metal ion source solution and the at least one source/drain contact plug or gate contact plug is the same. If the source/drain contact plug or the gate contact plug is formed of cobalt, the metal ion source solution includes a cobalt ion source solution. If the source/drain contact plug or the gate contact plug is formed of tungsten, the metal ion source solution includes a tungsten ion source solution.

Abstract: The disclosure relates generally to the field of processing substrates, for example comprising materials such as quartz, glass or silicon. The disclosure more particular relates to providing wet etch protection layers comprising boron and carbon and etching the substrate in a hydrogen fluoride aqueous solution. One or more of the boron and carbon containing films can have a thickness of at least 5, preferably 10 and, more preferably 30 nm. The method comprises wet etching the substrate in a hydrofluoric acid solution with a hydrogen fluoride concentration of at least 10 wt. % for at least 5 minutes.

Abstract: A chip comprises a semiconductor substrate having a first side and a second side opposite to the first side, a plurality of conductive metal patterns formed on the first side of the semiconductor substrate, a plurality of solder balls formed on the first side of the semiconductor substrate, and at least one code pattern of a first group and at least one code pattern of a second group formed on the first side of the semiconductor substrate in a space free from the plurality of conductive metal patterns and the plurality of solder balls, wherein the code patterns are visible from a backside of the chip, and wherein a tracing number of the chip is represented by the code patterns.

Abstract: A method for etching a metal surface includes a step of contacting a metal surface with a protic compound for a first time period to produce a first modified surface. The first modified surface is contacted with a protic ligand-forming compound that reacts with the first modified surface to form a volatile metal-containing compound including a metal atom and the protic ligand-forming compound. The volatile metal-containing compound is removed from the vicinity of the metal surface.

Abstract: Techniques are provided to remove the growth of colloidal silica deposits on surfaces of high aspect ratio structures during silicon nitride etch steps. A high selectivity overetch step is used to remove the deposited colloidal silica. The disclosed techniques include the use of phosphoric acid to remove silicon nitride from structures having silicon nitride formed in narrow gap or trench structures having high aspect ratios in which formation of colloidal silica deposits on a surface of the narrow gap or trench through a hydrolysis reaction occurs. A second etch step is used in which the hydrolysis reaction which formed the colloidal silica deposits is reversible, and with the now lower concentration of silica in the nearby phosphoric acid due to the depletion of the silicon nitride, the equilibrium drives the reaction in the reverse direction, dissolving the deposited silica back into solution.

Abstract: Manganese-(III) species is generated and regenerated in a mixed aqueous acid solution containing manganese-(II) species by injecting ozone gas in the mixed aqueous acid solution such that ozone oxidizes at least some of the manganese-(II) species to the manganese-(III) species with at least 60% Mn(III) generation efficiency. The acids include sulfuric acid and an alkane sulfonic acid. The aqueous acid solution containing manganese-(III) and manganese-(II) species is used to etch polymer materials. The etch is a chrome-free etch method.

Abstract: One of a setting dissolved oxygen concentration and a setting atmosphere oxygen concentration is determined based on a required etching amount. Thereafter, based on the required etching amount and the one of the determined setting dissolved oxygen concentration and setting atmosphere oxygen concentration, the other of the setting dissolved oxygen concentration and the setting atmosphere oxygen concentration is determined. A low oxygen gas whose oxygen concentration is equal or approached to the determined setting atmosphere oxygen concentration flows into a chamber that houses a substrate. Furthermore, an etching liquid whose dissolved oxygen is reduced such that its dissolved oxygen concentration is equal or approached to the determined setting dissolved oxygen concentration is supplied to the entire region of the upper surface of the substrate held horizontally.

Abstract: The present application relates to the electrochemical extraction of lead (Pb) from a lead-containing material using a deep eutectic solvent. This is of particular use in the recycling of the lead-based materials that result from energy generation processes.

Abstract: Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The substrate cleaning composite includes an etching compound that provides a component for treating a substrate, and a solvent that dissolves the etching compound, wherein the substrate cleaning composite is an anhydrous composite that does not include water.

Abstract: A substrate processing method includes a forcing member disposing step of disposing a facing member such that the facing member faces an upper surface of a horizontally held substrate; a space forming step of forming a space where movement of the atmosphere in from and out to an outside is restricted by the substrate, the facing member, and a guard that surrounds the substrate and the facing member in plan view; an inert gas supplying step of supplying an inert gas to the space; an interval adjusting step of adjusting an interval between the upper surface of the substrate and the facing member by relatively raising/lowering the facing member with respect to the substrate while maintaining the space; and a processing liquid supplying step of supplying a processing liquid to the upper surface of the substrate after the interval adjusting step.

Abstract: Disclosed is a substrate liquid processing apparatus that includes: a liquid processing unit that performs a liquid processing on a film formed on a surface of a substrate with an etching liquid; an etching liquid supply unit that supplies an etching liquid to the liquid processing unit; and a controller that controls the etching liquid supply unit. The controller is configured to perform a control such that an etching liquid in a state of having a relatively low etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit, and then, an etching liquid in a state of having a relatively high etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit.

Abstract: A method of removing at least a portion of a layer of material from over a semiconductor substrate that can include dispensing an etching solution over the semiconductor substrate to form a pool of etching solution on the layer of material, wherein a footprint of the pool of etching solution is less than a footprint of the semiconductor substrate. The pool of etching solution and the semiconductor substrate can be moved with respect to each other. A pool boundary of the pool of etching solution can be defined on the semiconductor substrate with at least one air-knife such that the pool of etching solution etches the layer of material over the semiconductor substrate within the footprint of the pool of etching solution. The etching solution and at least a portion of the layer of material etched by the etching solution can be removed with the at least one air-knife.

Abstract: A gas separation membrane, the gas separation membrane module, and the gas separation device include a first separation layer, and a second separation layer, the first separation layer has an Si/C ratio of 0.3 or less, the Si/C ratio being a ratio of the number of silicon atoms to the number of carbon atoms at the interface of the first separation layer on the second separation layer side, the second separation layer has a maximum value of an F/C ratio of 0.20 or more, the F/C ratio being a ratio of the number of fluorine atoms to the number of carbon atoms, and an Si/C ratio of 0.3 or less in a portion where the F/C ratio is maximum.

Abstract: Embodiments described herein relate generally to systems and methods for creating durable lubricious surfaces (DLS) via interfacial modification. The DLS can be prepared via a combination of a solid, a liquid, and an additive that modifies the interface between the DLS and a contact liquid, resulting in an interfacial layer that acts as a lubricant and/or protective coating between the DLS and the contact liquid. The lubricating effect created between the additive and the contact liquid results in enhanced slipperiness, as well as the protective properties that can help with durability of the DLS.

Abstract: A method of preparing a solution capable of etching a platable plastic. The method comprises the steps of: (a) providing an electrolyte comprising a solution of manganese(II) in a solution of 9 to 15 molar sulfuric acid or phosphoric acid to an electrolytic cell; (b) applying a current to the electrolytic cell, wherein the electrolytic cell comprises an anode and a cathode; and (c) oxidizing the electrolyte to form manganese(III) ions, wherein the manganese(III) ions form a metastable sulfate complex. Thereafter, a platable plastic may be immersed in the metastable sulfate complex for a period of time to etch the platable substrate prior to subsequent plating steps.

Abstract: Described herein is a continuous process for modifying the properties of polyester and polyester based fibers, such as a poly(butylene terephthalate) (PBT) fiber, comprising subjecting the PBT fiber to alkaline hydrolysis, and optionally further comprising functionalizing the PBT fiber by solution grafting such as fluorination. The alkaline hydrolysis and optionally subsequent functionalization such as fluorination process can be continuous, following the melt blowing/spinning or spun-bonding process. Also described is a nonwoven PBT fiber mat obtained by the surface modification process. Further described is a filtration device comprising the nonwoven PBT fiber mat.

Abstract: A substrate processing method is a substrate processing method which applies sequentially common etching processing which is common to each of a plurality of substrates. The common etching processing has an etching step and a high-temperature liquid discharge step. The substrate processing method further includes a piping heating step in which, of the plurality of common etching processings applied to the plurality of substrates, before the initial common etching processing, the pipe wall of the common piping is raised in temperature up to a predetermined second liquid temperature higher than a first liquid temperature and in each of the common etching processings, after each of high-temperature liquid discharge steps and before each of next etching steps, there is not performed a step in which the pipe wall of the common piping is lowered in temperature.

Abstract: A method for recycling a substrate holder adapted to receive a substrate for at least one deposition step of a layer of a material on the substrate also leading to the depositing of a layer of a material on the substrate holder, the method including implanting ion species through a receiving surface of the substrate holder so as to form at least one buried weakened plane delimiting a thin film underneath the receiving surface of the substrate holder, exfoliating the thin film from the substrate holder so as to break up the thin film, and removing a stack including at least one layer of a material deposited on the thin film resulting from the at least one deposition step of the layer of a material on the substrate.

Abstract: A method of an embodiment includes: mounting a workpiece, which includes the magnetic layer, on an electrostatic chuck provided in a processing container of a plasma processing apparatus; and etching the magnetic layer to generate plasma of a processing gas including isopropyl alcohol and carbon dioxide in the processing container. In an embodiment, a pressure of a space in the processing container is set to be 1.333 Pa or less, a temperature of the electrostatic chuck is set to be ?15° C. or lower, and a partial pressure of isopropyl alcohol is set to be equal to or lower than a saturation vapor pressure of the isopropyl alcohol.

Abstract: A substrate processing apparatus includes a phosphoric acid supply device for supplying phosphoric acid aqueous solution onto the upper surface of a substrate held on a spin chuck, a heater for emitting heat toward a portion of the upper surface of the substrate with the phosphoric acid aqueous solution being held on the substrate, a heater moving device for moving the heater to move a position heated by the heater within the upper surface of the substrate, a water nozzle for discharging water therethrough toward a portion of the upper surface of the substrate with the phosphoric acid aqueous solution being held on the substrate and a water nozzle moving device for moving the water nozzle to move the water landing position within the upper surface of the substrate.

Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes bringing a first catalyst into contact with a workpiece to form an oxide film on a surface of the workpiece, and bringing a second catalyst different from the first catalyst and the oxide film into contact with each other or moving the second catalyst and the oxide film closer to each other to elute the oxide film into a treatment liquid.

Abstract: Photo-initiated polymeric ionic liquids, methods of making and methods of using the same are disclosed. A preferred embodiment for making a photo-initiated polymeric ionic liquid (P-PIL) coated support, comprises: mixing at least one ionic liquid (IL) monomer with at least one photo-initiator; at least partially coating a support with the mixture; and exposing the coated support to UV light to form a photo-initiated polymeric ionic liquid (P-PIL) coated support.

Abstract: The present invention provides is a lightweight environment-friendly polypropylene composite floor comprising, from top to bottom: 1) a scratch-resistant coating layer, 2) a super-transparent wear-resistant layer, 3) a decorative layer, 4) a first substrate layer, 5) a second substrate layer, 6) a bottom connective layer, and optionally 7) a back adhesive layer. Also provided is a preparation process of the composite floor.

Abstract: According to one embodiment, an adhesive tape includes a film and an adhesive layer. The film includes polytetrafluoroethylene and a carbon filler. The adhesive layer is provided on a surface of the film, and includes a silicone pressure-sensitive adhesive.

Abstract: According to one embodiment, a treatment apparatus includes a dialysis unit, a treatment unit and a recovery unit. The dialysis unit is configured to dialyze a solution including a phosphoric acid, a silicon compound, and water. The treatment unit is configured to perform treatment of an object to be treated using a dialyzed solution. The recovery unit is configured to recover a solution used in the treatment of the object to be treated and supply to the dialysis unit. The dialysis unit includes a transmission part which allows anions to be transmitted. The recovery unit supplies the solution used in the treatment of the object to be treated, to a region in the dialysis unit. The region is divided by the transmission part.

Abstract: An ink disclosed herein comprises a carrier liquid with a dispersion of flakes derived from a layered material. The thickness of each flake depends on the number of layers of the layered material in the flake. The thickness distribution of the flakes includes: at least 20% by number of single layer flakes; at least 40% by number cumulatively of single, double and triple layer flakes; or not more than 40% by number of flakes having ten or more layers. The layered material is selected from one or more of elemental materials such as graphene (typically derived from pristine graphite), metals (e.g., NiTe2, VSe2), semi-metals (e.g., WTa2, TcS2), semiconductors (e.g., WS2, WSe2, MoS2, MoTe2, TaS2, RhTe2, PdTe2), insulators (e.g., h-BN, HfS2), superconductors (e.g., NbS2, NbSe2, NbTe2, TaSe2) and topological insulators and thermo-electrics (e.g., Bi2Se3, Bi2Te3). Also disclosed are methods of manufacturing suitable inks and uses of the inks.

Abstract: In a substrate processing apparatus, with an internal space of a chamber brought into a reduced pressure atmosphere, a first processing liquid is supplied onto an upper surface of a substrate while the substrate is rotated, and the first processing liquid is thereby quickly spread from a center portion toward a peripheral portion on the upper surface of the substrate. It is thereby possible to coat the upper surface of the substrate with the first processing liquid in a shorter time as compared with under normal pressure. Further, by sucking the first processing liquid from the vicinity of an edge of the substrate, it is possible to coat the upper surface of the substrate with the first processing liquid in a still shorter time. As a result, it is possible to shorten the time required for the processing of the substrate.

Abstract: Herein is disclosed a process for recycling electrode material from lithium-ion batteries, comprising harvesting a mixture of anode and cathode electrode materials from waste lithium-ion batteries, and separating the anode electrode material from the cathode electrode material by means of dense liquid separation. The mixed anode and cathode material is suspended in a liquid that has a density between those of the anode material and cathode material, such that the anode material rises to the top of the dense liquid and the cathode material sinks to the bottom of the dense liquid. The thus separated materials can easily be collected and further purified and regenerated for reuse in new lithium-ion batteries, providing an efficient and low-cost method for recycling electrode active materials from waste lithium-ion batteries.

Abstract: A composition for pattern formation includes a block copolymer and a solvent. The block copolymer includes a group including a reactive group on at least one end of a main chain of the block copolymer. A pattern-forming method includes providing a directed self-assembling film directly or indirectly on a substrate using the composition. The directed self-assembling film includes a phase separation structure which includes a plurality of phases. A part of the plurality of phases of the directed self-assembling film is removed.

Abstract: A composition for pattern formation includes a block copolymer. The block polymer includes a first labile group at an end of a main chain of the block copolymer. The first acid liable group is capable of being dissociated by an acid or heat. The composition preferably further contains an acid generator that generates an acid upon application of an energy. The block copolymer is preferably capable of forming a phase separation structure through directed self-assembly. The first labile group is preferably represented by formula (a). R represents a monovalent organic group having 1 to 20 carbon atoms; R? represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and * denotes a binding site to an atom at the end of the main chain of the block copolymer.

Abstract: An etching method, having the step of applying an etching liquid onto a TiN-containing layer in a semiconductor substrate thereby etching the TiN-containing layer, the etching liquid comprising water, and a basic compound and an oxidizing agent in water thereof to be within the range of pH from 8.5 to 14, and the TiN-containing layer having a surface oxygen content from 0.1 mol % to 10 mol %.

Abstract: The present invention provides a method of improving lifetime of etching liquid and yield in Cu-interconnection process and a Cu-interconnection etching device. The method comprises: step 1, providing an etching spray rising tank (1) and an etching liquid tank (2) connected to the etching spray rising tank (1), and the etching liquid tank (2) contains etching liquid; step 2, employing a first concentration monitoring device (4) to measure a copper ion concentration of the etching liquid in the etching liquid tank (2), and employing a filter (5) to perform copper ion filtering to the etching liquid in the etching liquid tank (2); step 3, employing a second concentration monitoring device (6) to measure a copper ion concentration of the etching liquid after filtering in the step 2, and controlling an amount of the filters (5) employed in the step 2 and reflowing the etching liquid after filtering to the etching liquid tank (2).

Abstract: The plastisol coated plating tools are used to secure polymer containing substrates in electroless plating baths during electroless plating of the polymers. To prevent metallization of the plastisol coated plating tools during electroless metallization, compositions of sulfur compounds are applied to the plastisol. After metallization the plastisol coated plating tools may be re-used without the need to strip the unwanted metal from the tools.

Abstract: An silicon-containing antireflective coating (SiARC) material is applied on a substrate. The SiARC material which includes a base polymer and may include a boron silicate polymer including silsesquioxane. An etch sequence is utilized, which includes a first wet etch employing a basic solution, a second wet etch employing an acidic solution, and a third wet etch employing another basic solution. The first wet etch can be employed to break up the boron silicate polymer, and the second wet etch can remove the base polymer material, and the third wet etch can remove the residual boron silicate polymer and other residual materials. The SiARC material can be removed from a substrate employing the etch sequence, and the substrate can be reused for monitoring purposes.

Abstract: A substrate treatment method for treating a substrate including a first silicon nitride film provided on a front surface thereof and a silicon oxide film provided on the first silicon nitride film to remove the first silicon nitride film and the silicon oxide film from the substrate includes: a first phosphoric acid treatment step of supplying a phosphoric acid aqueous solution having a predetermined first concentration to the substrate held by a substrate holding unit to treat the substrate with the first concentration phosphoric acid aqueous solution for the removal of the first silicon nitride film; and a second phosphoric acid treatment step of supplying a phosphoric acid aqueous solution having a second concentration lower than the first concentration to the substrate to treat the substrate with the second concentration phosphoric acid aqueous solution for the removal of the silicon oxide film after the first phosphoric acid treatment step.

Abstract: A method of manufacturing an electrowetting device including dispensing a fluid from a channel and onto a surface of a support plate. The channel is formed by a part of the surface of the support plate, an interface between the fluid and another fluid, and a further surface which is for example a surface of a roller.

Abstract: A method for conversion treating a surface of a magnesium alloy workpiece includes the following steps: providing a magnesium alloy workpiece, degreasing the magnesium alloy workpiece, acid pickling the magnesium alloy workpiece in a first acid pickling treatment step, surface conditioning the magnesium alloy workpiece in a first surface conditioning treatment step, acid pickling the magnesium alloy workpiece in a second acid pickling treatment step, surface conditioning the magnesium alloy workpiece in a second surface conditioning treatment step, pre-phosphating the magnesium alloy workpiece in a pre-phosphating treatment step, and phosphating the magnesium alloy workpiece in a phosphating treatment step to form a phosphating film on the surface of the magnesium alloy workpiece.