Abstract: There is provided a coated film removing apparatus for removing, with a removal liquid, a peripheral portion of a coated film formed by supplying a coating liquid to a surface of a circular substrate, including: a rotary holding part configured to hold the substrate and rotate together with the substrate; a removal liquid nozzle configured to discharge the removal liquid on a peripheral portion of the surface of the substrate held by the rotary holding part so that the removal liquid is oriented toward a downstream side in a rotational direction of the substrate; and a control part configured to output a control signal so as to rotate the substrate at a rotation speed of 2,300 rpm or more when discharging the removal liquid.

Abstract: Embodiments of 3D memory devices with a structurally-reinforced semiconductor plug and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A dielectric stack is formed on a substrate. The dielectric stack includes a plurality of interleaved dielectric layers and sacrificial layers. An opening extending vertically through the dielectric stack is formed. A shallow recess is formed by removing a part of a sacrificial layer abutting a sidewall of the opening. The sacrificial layer is at a lower portion of the dielectric stack. A semiconductor plug is formed at a lower portion of the opening. A part of the semiconductor plug protrudes into the shallow recess. A channel structure is formed above and in contact with the semiconductor plug in the opening. A memory stack including a plurality of conductor/dielectric layer pairs is formed by replacing, with a plurality of conductor layers, the sacrificial layers in the dielectric stack.

Abstract: There is provided a method for preparing a graphene film for pellicle, and also a method for making a pellicle using such graphene film: wherein a film-like graphene deposited on a base material is coated with a protective film, from which the base material is chemically removed by an etching liquid and then the protective film is chemically removed by a solvent whose surFace tension is lower than that of the etching liquid; the pellicle frame may be attached to the film-like graphene before the protective film is completely removed or thereafter.

Abstract: A main object of the present invention is to provide a dye-sensitized solar cell capable of improving photoelectric conversion efficiency, which is obtained at low costs, and a dye-sensitized solar cell module using the solar cell.

Abstract: A method includes creating an opening in a first outer layer of a multilayer sheet of material, the sheet of material having three or more layers of material, including the first outer layer and a second outer layer. A selective etchant is introduced through the opening, where the etchant selectively etches an interior metal layer of the multilayer sheet of material compared with the first and second outer layers. The selective etchant is permitted to etch material of the interior metal layer under the first outer layer.

Abstract: A ceramic electronic component includes a ceramic body, a glass coating layer, and terminal electrodes. End portions of inner electrodes are exposed at a surface of the ceramic body. The glass coating layer covers portions of the ceramic body in which the inner electrodes are exposed. The terminal electrodes are disposed directly above the glass coating layer and are each constituted by a plating film. The glass coating layer includes a glass medium and metal powder particles that are dispersed in the glass medium and define conductive paths which electrically connect the inner electrodes and the terminal electrodes. The metal powder particles include first metal powder particles and second metal powder particles. The first metal powder particles are flat or substantially flat powder particles. The second metal powder particles are spherical or substantially spherical powder particles.

Abstract: A method of making an imprinted multi-layer structure includes providing a support and locating a first curable layer including a first material on or over the support. A second curable layer including a second material different from the first material is located on or over the first curable layer. The first curable layer and the second curable layer are imprinted in a single step with an imprinting stamp having a structure with a depth greater than the thickness of the second curable layer. The first curable layer and the second curable layer are cured in a single step to form a first cured layer and a second cured layer. The imprinting stamp is removed to form an imprinted multi-layer structure with a depth greater than the thickness of the second cured layer.

Abstract: Disclosed are etching solution compositions that comprise fluorine compounds and iron ions, which are used for bulk etching of metal laminate films wherein a layer comprising aluminum or an aluminum alloy is laminated on top and a layer comprising titanium or a titanium alloy on bottom, and an etching method using said etching solution compositions.

Abstract: A double ITO structure, containing sequential layers of indium tin oxide (ITO), silicon dioxide (SiO2) (which may include a dopant material) and ITO, is selectively protected by a patterned photo-resist mask. The sequential layers are etched together in a single etching step using an etchant composition which is an acidic solution containing a transition metal chloride and hydrochloric acid (HCl). Thus, the double ITO structure is etched using a substantially fluoride-free etchant composition.

Abstract: A method for manufacturing a liquid discharge head includes a step of preparing a first substrate having an energy generating element at a front surface side thereof; a step of forming a wall member, which is to become a wall for a liquid flow passage, at the front surface side of the first substrate; a step of forming a mask having an opening on the wall member and forming a second substrate, which is composed of silicon and is to become an orifice plate, on the mask; and a step of forming a liquid supply port in the first substrate and a liquid discharge port in the second substrate by supplying an etchant from a back surface side of the first substrate, the back surface being a surface opposite the front surface.

Abstract: A vibration device including a supporting portion formed to cover both ends of a vibration region, and a method of manufacturing the vibration device are provided. The vibration device may include a lower substrate on which an insulating layer is formed, an upper substrate connected onto the insulating layer, and including a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance, and a supporting portion formed to cover both ends of the vibration region, to support the vibration region.

Abstract: A method to thin an initial silicon-on-insulator substrate that has a layer of silicon oxide buried between a silicon carrier substrate and a silicon surface layer.

Abstract: A microfluidic device includes a support body having a first surface and a second surface opposite to one another. The first surface is hydrophilic. A surface modification layer extends over the first surface of the support body. At least one opening is formed to extend through the surface modification layer and expose a portion of the first surface. The surface modification layer is hydrophobic. In particular, the surface modification layer is made of a photodefinible material chosen from among: an epoxy resin, a polyamide, and a photocurable siloxane-based polymer. The openings are functionalized using probe molecules designed to bind with specific target molecules to be detected.

Abstract: A prosthesis comprising: an inner layer formed from a polyaryletherketone; a first outer layer adjacent to said inner layer formed from a porous polyaryletherketone, at least some of said pores having located therein material to promote osteointegration; and a second outer layer adjacent to said first outer layer formed from a porous polyaryletherketone, a portion of said pores being free of material to promote osteointegration. The invention also relates to a method of manufacture of the prosthesis.

Abstract: The present disclosure relates to roll-to-roll doping method of graphene film, and doped graphene film.

Abstract: Provided is a particle that includes a first porous region and a second porous region that differs from the first porous region. Also provided is a particle that has a wet etched porous region and that does have a nucleation layer associated with wet etching. Methods of making porous particles are also provided.

Abstract: A metal implant, in particular a dental implant, with a hydrophilic surface for at least partial insertion into a bone, and a method for the production of said implant are described. A particularly advantageous hydrophilic surface for improved osteointegration properties is made available if it is briefly treated, at least in some areas, in a weakly alkaline solution. These excellent osteointegration properties can be achieved in a method in which, optionally after a preceding mechanical surface modification by material removal and/or chemical surface modification, at least the areas exposed of this surface exposed to bone and/or soft tissue are chemically modified in an alkaline solution.

Abstract: In order to improve the color and luminance uniformity of an LED chip with a phosphor-containing resin sheet obtained by adhering the phosphor-containing resin sheet to the LED chip, improve the ease of production, and improve the degree of freedom in design, etc., provided is a resin sheet laminate provided with a phosphor-containing resin sheet on a base material, wherein the phosphor-containing resin sheet is divided into a plurality of sections.

Abstract: A method of etching silicon, the method comprising the steps of: electrolessly depositing a first metal onto a silicon surface to be etched, wherein the electrolessly deposited first metal partially covers the surface of the silicon to be etched; depositing a second metal that is different from the first metal over the silicon surface and the electrolessly deposited first metal, wherein a film of the deposited second metal covers the silicon surface to be etched; removing the first metal and the second metal from regions of the film of the deposited second metal that overlie the first metal to leave the second metal partially covering the silicon surface to be etched; and etching the silicon by exposing the silicon surface to an aqueous etching composition comprising an oxidant and a source of fluoride ions.

Abstract: In accordance with an embodiment of the present invention, a method of polishing a device includes providing a layer having a non-uniform top surface. The non-uniform top surface includes a plurality of protrusions. The method further includes removing the plurality of protrusions by exposing the layer to a fluid that has gas bubbles and a liquid.

Abstract: A method for finishing an exterior surface of an injection-molded product is provided, in which a metal layer is formed on the exterior surface of the injection-molded product, a photoresist layer is formed on the metal layer, a photomask is placed on the photoresist layer, light is projected onto the photomask, and remaining parts of the metal layer and the photoresist layer except for parts corresponding to a pattern formed on the photomask are removed by etching.

Abstract: A method of depositing a non-continuous coating of a first material on a substrate, comprising: a) the formation of a mask on this substrate, by forming at least two mask layers, and etching of at least one cavity in these layers, this cavity having an outline such that a coating, deposited on the substrate, through the cavities of the mask, has at least one discontinuity over said outline of the cavity; b) the deposition of the first material on the substrate, through the cavities of the mask, the coating thus deposited having at least one discontinuity over the outline of said cavity; and c) the mask is removed.

Abstract: A method to fabricate an imprint mould in three dimensions including at least: a) forming at least one trench, of width W and depth h, in a substrate, thereby forming three surfaces including, a bottom of the at least one trench, sidewalls of the at least one trench, and a remaining surface of the substrate, called top of the substrate; b) forming alternate layers in the at least one trench, each having at least one portion perpendicular to the substrate, in a first material and in a second material which can be selectively etched relative to the first material; and c) selectively etching said portions of the layers perpendicular to the substrate.

Abstract: A method of forming a metal pattern on a display substrate includes blanket depositing a copper-based layer having a thickness between about 1,500 ? and about 5,500 ? on a base substrate, and forming a patterned photoresist layer on the copper-based layer. The copper-based layer is over-etched by an etching composition containing an oxidizing moderating agent where the over-etch factor is between about 40% and about 200% while using the patterned photoresist layer as an etch stopping layer, and where the etching composition includes ammonium persulfate between about 0.1% by weight and about 50% by weight, includes an azole-based compound between about 0.01% by weight and about 5% by weight and a remainder of water. Thus, reliability of the metal pattern and that of manufacturing a display substrate may be improved.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming a pillar on a base layer, forming a insulating layer on the base layer to cover the pillar by using GCIB method, where a lowermost portion of an upper surface of the insulating layer is lower than an upper surface of the pillar, and polishing the insulating layer and the pillar to expose a head of the pillar by using CMP method, where an end point of the polishing is the lowermost portion of the upper surface of the insulating layer.

Abstract: A process for etching a silicon-containing substrate to form structures is provided. In the process, a metal is deposited and patterned onto a silicon-containing substrate (commonly one with a resistivity above 1-10 ohm-cm) in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. The metallized substrate is submerged into an etchant aqueous solution comprising about 4 to about 49 weight percent HF and an oxidizing agent such as about 0.5 to about 30 weight percent H2O2, thus producing a metallized substrate with one or more trenches. A second silicon etch is optionally employed to remove nanowires inside the one or more trenches.

Abstract: A process for manufacturing a membrane of nozzles of a spray device, comprising the steps of laying a substrate, forming a membrane layer on the substrate, forming a plurality of nozzles in the membrane layer, forming a plurality of supply channels in the substrate, each supply channel being substantially aligned in a vertical direction to a respective nozzle of the plurality of nozzles and in direct communication with the respective nozzle.

Abstract: A method for removing a plurality of dielectric materials from a supporting substrate by providing a substrate with a plurality of materials, contacting the substrate at a first temperature with a solution to more quickly remove a first dielectric material than a second dielectric material at the first temperature, and then contacting the substrate at a second temperature with a solution to more quickly remove the second dielectric material than the first dielectric material at the second temperature. Thus, the dielectric materials exhibit different etch rates when etched at the first and second temperatures. The solutions to which the first and second dielectric materials are exposed may contain phosphoric acid. The first dielectric material may be silicon nitride and the second dielectric material may be silicon oxide. Under these conditions, the first temperature may be about 175° C., and the second temperature may be about 155° C.

Abstract: A new fractionation device shows desirable features for exploratory screening and biomarker discovery. The constituent MSCs may be tailored for desired pore sizes and surface properties and for the sequestration and enrichment of extremely low abundant protein and peptides in desired ranges of the mass/charge spectrum. The MSCs are effective in yielding reproducible extracts from complex biological samples as small as 10 ?l in a time as short as 30 minutes. They are inexpensive to manufacture, and allow for scaled up production to attain the simultaneous processing of a large number of samples. The MSCs are multiplexed, label-free diagnostic tools with the potential of biological recognition moiety modification for enhanced specificity. The MSCs may store, protect and stabilize biological fluids, enabling the simplified and cost-effective collection and transportation of clinical samples.

Abstract: A method includes applying a final etch-resistant material to an in-process substrate so that the final etch-resistant material at least partially covers first microcontact portions integral with the substrate and projecting upwardly from a surface of the substrate, and etching the surface of the substrate so as to leave second microcontact portions below the first microcontact portions and integral therewith, the final etch-resistant material at least partially protecting the first microcontact portions from etching during the further etching step. A microelectronic unit includes a substrate, and a plurality of microcontacts projecting in a vertical direction from the substrate, each microcontact including a base region adjacent the substrate and a tip region remote from the substrate, each microcontact having a horizontal dimension which is a first function of vertical location in the base region and which is a second function of vertical location in the tip region.

Abstract: A method for trimming a structure obtained by bonding a first wafer to a second waver on contact faces and thinning the first waver, wherein at least either the first wafer or the second wafer is chamfered and thus exposes the edge of the contact face of the first wafer, wherein the trimming concerns the first wafer. The method includes a) selecting the second wafer from among wafers with a resistance to a chemical etching planned in b) that is sufficient with respect to the first wafer to allow b) to be carried out; b) after bonding the first wafer to the second wafer, chemical etching the edge of the first wafer to form in the first wafer a pedestal resting entirely on the contact face of the second wafer and supporting the remaining of the first wafer; and c) thinning the first wafer until the pedestal is reached and attacked, to provide a thinned part of the first wafer.

Abstract: The present disclosure relates to a bioimplantable device having a superhydrophobic surface and a method for manufacturing the same. The bioimplantable device, which includes a biocompatible substrate and a superhydrophobic nanostructure formed on the surface of the biocompatible substrate, is capable of preventing blood clot formation by blocking contact with proteins, water, blood platelets, etc. when used for blood vessels.

Abstract: A method for etching an ultra thin film is provided which includes providing a substrate having the ultra thin film formed thereon, patterning a photosensitive layer formed over the ultra thin film, etching the ultra thin film using the patterned photosensitive layer, and removing the patterned photosensitive layer. The etching process includes utilizing an etch material with a diffusion resistant carrier such that the etch material is prevented from diffusing to a region underneath the photosensitive layer and removing portions of the ultra thin film underneath the photosensitive layer.

Abstract: For a cross slit structure that contains a nanopore, a layer is produced including a first spacer that penetrates through the layer. A subsequent layer over, and in direct contact with, the layer is also produced. The subsequent layer includes a second spacer penetrating through the subsequent layer. The first spacer and the second spacer are selectively etched away, creating a first slit and a second slit. Respective projections of these slits are crossing one another at an angle. At such a crossing an opening is formed which provides for fluid connectivity through the two layers.

Abstract: A method is disclosed for the selective etching of a multi-layer metal oxide stack comprising a platinum or tungsten layer on a TiN layer on an HfO2 or ZrO2 layer on a silicon substrate. In some embodiments, the method comprises a physical sputter process to selectively etch the platinum layer, followed by a first wet etch using a mixture of NH4OH and H2O2 to selectively etch the TiN layer, and a second wet etch using a dilute mixture of HF and HCl to selectively etch the HfO2 or ZrO2 layer.

Abstract: An RFID based thermal bubble type accelerometer includes a flexible substrate, an embedded system on chip (SOC) unit, an RFID antenna formed on the substrate and coupled to a modulation/demodulation module in the SOC unit, a cavity formed on the flexible substrate, and a plurality of sensing assemblies, including a heater and two temperature-sensing elements, disposed along the x-axis direction and suspended over the cavity. The two temperature-sensing elements, serially connected, are separately disposed at two opposite sides and at substantially equal distances from the heater. Two sets of sensing assemblies can be connected in differential Wheatstone bridge. The series-connecting points of the sensing assemblies are coupled to the SOC unit such that an x-axis acceleration can be obtained by a voltage difference between the connecting points. The x-axis acceleration can be sent by the RFID antenna to a reader after it is is modulated and encoded by the modulation/demodulation module.

Abstract: Disclosed herein are methods of controlling the etching of a layer of silicon nitride relative to a layer of silicon dioxide. In one illustrative example, the method includes providing an etch bath that is comprised of an existing etchant adapted to selectively etch silicon nitride relative to silicon dioxide, performing an etching process in the etch bath using the existing etchant to selectively remove a silicon nitride material positioned above a silicon dioxide material on a plurality of semiconducting substrates, determining an amount of the existing etchant to be removed based upon a per substrate silicon loading of the etch bath by virtue of etching the plurality of substrates in the etch bath and determining an amount of new etchant to be added to the etch bath based upon a per substrate silicon loading of the etch bath by virtue of etching the plurality of substrates in the etch bath.

Abstract: A film of single-layer to few-layer graphene is formed by depositing a graphene film via chemical vapor deposition on a surface of a growth substrate. The surface on which the graphene is deposited can be a polycrystalline nickel film, which is deposited by evaporation on a SiO2/Si substrate. A protective support layer is then coated on the graphene film to provide support for the graphene film and to maintain its integrity when it is removed from the growth substrate. The surface of the growth substrate is then etched to release the graphene film and the protective support layer from the growth substrate, wherein the protective support layer maintains the integrity of the graphene film during and after its release from the growth substrate. After being released from the growth substrate, the graphene film and protective support layer can be applied onto an arbitrary target substrate for evaluation or use in any of a wide variety of applications.

Abstract: The invention relates to a ceramic substrate material having a first layer having a cavity structure formed therein, and at least one sealing layer situated on at least a part of the cavity structure. The first layer comprises at least one first component made of a crystalline ceramic material and/or a glass material as a matrix, the first layer containing a second component made of a further crystalline ceramic material, with selected mantle areas of the crystals and/or crystal agglomerates of the second component being etched out in such a way that the cavity structure is provided (preferably in the form of a pore and/or tube structure). The sealing layer seals the surface of the first layer in the areas on which it is situated (e.g., above the cavity structure), allowing application of thin-film structures to the cavity structure.

Abstract: A prosthesis comprising: an inner layer (4) formed from a polyaryletherketone; a first outer layer (2a) adjacent to said inner layer formed from a porous polyaryletherketone, at least some of said pores having located therein material to promote osteointegration; and a second outer layer (2b) adjacent to said first outer layer formed from a porous polyaryletherketone, a portion of said pores being free of material to promote osteointegration. The invention also relates to a method of manufacture of the prosthesis.

Abstract: A composition for providing acid resistance to copper surfaces in the production of multilayered printed circuit boards. The composition comprises an acid, an oxidizer, a five-membered heterocyclic compound and a thiophosphate or a phosphorous sulfide compound. In a preferred embodiment, the phosphorous compound is phosphorus pentasulfide. The composition is applied to a copper or copper alloy substrate and the copper substrate is thereafter bonded to a polymeric material.

Abstract: Provided herein are silica shell particles modified on their surface with biomolecules, methods of making these particles, and methods of using these particles, e.g., in transfection methods, methods of inhibiting gene expression, and methods of delivering a therapeutic.

Abstract: Etch solutions for selectively etching doped oxide materials in the presence of silicon nitride, titanium nitride, and silicon materials, and methods utilizing the etch solutions, for example, in construction of container capacitor constructions are provided. The etch solutions are formulated as a mixture of hydrofluoric acid and an organic acid having a dielectric constant less than water, optionally, with an inorganic acid, and a pH of 1 or less.

Abstract: A pattern-forming method includes forming a prepattern on a substrate. A space other than a space in which the prepattern is formed on the substrate is filled with a resin composition containing a compound which is diffusible into the prepattern. The compound is diffused into a part of the prepattern. Portions in which the compound is undiffused in the prepattern are removed using a removing liquid.

Abstract: A method for patterning an article, the article comprising a first layer of a first material, the method comprising providing a thread carrying a first species, e.g. a solvent in which the first material is soluble, and contacting the thread with the first layer to remove at least part of the first layer.

Abstract: A method of forming an energy assisted magnetic recording (EAMR) writer is disclosed. A structure comprising a bottom cladding layer and a near field transducer (NFT) is provided. A patterned sacrificial layer is formed over the structure. A top cladding layer is deposited over the patterned sacrificial layer and a remaining region of the structure not covered by the patterned sacrificial layer. A patterned resist is formed over the top cladding layer. A first etching operation is performed on the top cladding layer via the patterned resist, whereby a top cladding having a sloped region is formed. The patterned sacrificial layer provides an etch stop for the first etching operation.

Abstract: Surface texturing of the transparent conductive oxide (TCO) front contact of a thin film photovoltaic (TFPV) solar cell is needed to enhance the light-trapping capability of the TFPV solar cells and thus improving the solar cell efficiency. Embodiments of the current invention describe chemical formulations and methods for the wet etching of the TCO. The formulations and methods may be optimized to tune the surface texturing of the TCO as desired.

Abstract: A preprocess step for supplying an inert gas into an enclosed space in which a substrate is disposed, while exhausting gas by sucking out of the enclosed space. And then, an etching step for supplying a process vapor into the enclosed space while exhausting gas out of the enclosed space at an rate lower than a rate in the preprocess step. And then a post-process step for supplying an inert gas into the enclosed space while exhausting gas by sucking out of the enclosed space at a rate higher than the rate in the etching step.

Abstract: An object of the present invention is to provide: an electrophotographic member which enhances image quality, prevents the lowering of a grade of an image even when images have been repeatedly output, and can remarkably enhance the stability of the grade of the image; an intermediate transfer member; and an image forming apparatus. The electrophotographic member includes a base layer and a surface layer, wherein the surface layer has a binder resin, perfluoropolymer fine particles, a fluorocarbon resin dispersing agent and a particular fluorine compound, wherein the perfluoropolymer fine particle has a fluorine compound carried on its surface.

Abstract: In one embodiment, a method for forming a metallized ceramic includes thermal spraying metal directly onto a first side of a ceramic plate. The metal comprising aluminum. The method also includes densifying the thermally ceramic plate after spraying the metal onto the first side of the ceramic plate.