Abstract: A method of heating an optical member includes providing the optical member, directing heat from a heat source toward the optical member, and distributing the heat about the optical member through a high-thermal-conductivity apparatus disposed between the heat source and the optical member such that a surface of the apparatus defining a volume for receiving the optical member will have a substantially uniform temperature.

Abstract: This application discloses a substrate heating apparatus comprising a partition separating the inside of a load-lock chamber into two areas. An inside opening provided in the partition is closed by a partition valve, while the second area in which a substrate is transferred is evacuated at a vacuum pressure by a pumping line. After the partition valve is opened, a carrier carries the substrate through the inside opening, thereby contacting the substrate onto a heat body disposed in the first area. Otherwise, after the partition valve is opened, a carrier carries a heat body through the inside opening, thereby contacting the substrate onto the heat body in the second area. This application also discloses a substrate processing system comprising a transfer chamber, and a load-lock chamber and a process chamber both provided on the periphery of the transfer chamber.

Abstract: Various processes for heating semiconductor wafers is disclosed. In particular, the present invention is directed to configuring light sources emitting light energy onto a wafer in order to optimize absorption of the energy by the wafer. Optimization is carried out by varying the angle of incidence of the light energy contacting the wafer, using multiple wavelengths of light, and configuring the light energy such that it contacts the wafer in a particular polarized state. In one embodiment, the light energy can be emitted by a laser that is scanned over the surface of the wafer.

Abstract: A heater assembly for an ALD or CVD reactor provides protection for an electrical conductor associated with a heating element by using a purge gas to isolate the conductor from the corrosive environment of the reactor chamber. The purge gas is introduced into a sleeve surrounding the conductor and from there is allowed to leak into the reactor chamber to be pumped out with the process gasses. This arrangement avoids the need for airtight seals at the junction of the sleeve and the heating element easing manufacturing requirements and potentially reducing component costs.

Abstract: A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.

Abstract: A baking method for heating an object (an inner pipe, an outer pipe) having a vacuum layer formed therein to remove gas molecules occluded in the object, wherein the object itself is made to be a heat production element for heating. By making the baking object a heat production element, the object can be heated directly and the heating can be energy-efficient. Moreover, additional heating means such as a heater or gas is unnecessary, which enables simplification of a configuration of a baking device. Therefore, a baking method is obtained which enables energy-efficient heating and, in particular, uniform heating of a long or large object.

Abstract: A substrate processing apparatus includes a reaction chamber for simultaneously processing a plurality of process substrates, a boat for loading the process substrates into the reaction chamber, and a stocker for storing a multiple number of dummy substrates, at least a portion of the dummy substrates being loaded into the reaction chamber together with the process substrates through the use of the boat. A substrate cleaning process is carried out by loading dummy substrates to be cleaned into the reaction chamber through the use of the boat and introducing a cleaning gas into the reaction chamber.

Abstract: In a first aspect, a first apparatus is provided for heating substrates. The first apparatus includes (1) a chamber having a bottom portion and a top portion; (2) a plurality of heated supports disposed within the chamber to support at least two substrates thereon; and (3) a heater disposed within the chamber between a sidewall of the chamber and the plurality of substrate supports and having an edge region and a center region. The heater is adapted to produce more heat within the edge region than within the center region of the heater. Numerous other aspects are provided.

Abstract: A light source comprising a plurality of flash lamps emits flashes thereby flash-heating a semiconductor wafer held by a thermal diffuser and a hot plate. The current distance of irradiation between the thermal diffuser and the hot plate holding the semiconductor wafer and the light source is so adjusted as to attain predetermined intensity of irradiation. The distance of irradiation between the thermal diffuser and the hot plate and the light source can be changed or corrected by vertically moving the thermal diffuser and the hot plate. Thus provided is a thermal processing apparatus using the flash lamps, capable of readily controlling the intensity of irradiation.

Abstract: A baking system for a plasma display panel which comprises a clean room 1 and a baking furnace having an upper passage 11 for conveying a plasma display panel glass substrate 5 during baking from an inlet 15 of the furnace 3, and a lower passage 13 for conveying the baked substrate 5 in the upper passage 11 towards an outlet of the furnace 3, both of the inlet and the outlet being provided at the same end of the furnace 3, characterized in that only the inlet 15 and the outlet 17 are connected to a clean room 1, while keeping a body thereof outside the clean room 1. Also, there is disclosed a layout method for such a baking system.

Abstract: The invention relates to a method for controlling the surface temperatures of substrates arranged on substrate supports borne by a substrate support carrier on dynamic gas cushions in a processing chamber of a CVD-reactor. The aim of the invention is to reduce or adjust the temperature variations. According to the invention, an average surface temperature value is calculated, being measured in a particularly optical manner, and the level of the gas cushions is regulated by varying the individually controlled gas flow producing the gas cushions in such a way that the variations of the measured surface temperatures in relation to the average value lies within a predetermined temperature window.

Abstract: A thermal processing method selects a batch size range including the number of workpieces to be processed from a plurality of batch size ranges including batch size ranges in which reference numbers smaller than the holding capacity of a workpiece holder are maximums. The workpieces are distributed in the workpiece holder on the basis of the workpiece distribution pattern determined corresponding to the specified batch size range. Processing conditions of the thermal process are determined according to the workpiece distribution pattern. A thermal processing apparatus comprises a controller capable of carrying out the thermal processing method.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract: A substrate processing apparatus including lift pins for lifting the substrate capable of moving up and down, a heating plate with holes through which the lift pins protrude and sink to a surface facing the substrate, a lid placed above the heating plate capable of moving up and down, a first inert gas introducing mechanism introducing a first inert gas to the inside portion of the lid and a second inert gas introducing mechanism introducing a second inert gas onto the surface of the heating plate through the holes. With such configuration, the inert gas can be introduced to both sides, the front side and the rear side, of the substrate, and oxygen is prevented from being forced to come around to the surface of the substrate from the rear side thereof. As a result, oxidation of the substrate can be prevented effectively.

Abstract: The aim of the invention is to enable substrates to be thermally treated in a more homogeneous manner. In order to achieve this, a device is provided for thermally treating substrates, especially semiconductor wafers, comprising at least two adjacent, essentially parallel heating elements which respectively have at least one heating wire. The two adjacent heating elements are embodied in such a way that they are quasi-complementary, at least in parts, in terms of the coiled and uncoiled segments of the heating wires pertaining thereto.

Abstract: An apparatus and method and processing a semiconductor substrate that controls heating of the substrate to thereby control the depth of the junctions formed by impurities implanted in the semiconductor substrate by heating a device side of the semiconductor substrate to a reference temperature and heating the device side of the semiconductor substrate to a heat activation temperature that is greater than the reference temperature for an activation period, which provides sufficient energy to activate the impurities so that they become part of the lattice structure of the substrate while minimizing diffusion of the impurities across the substrate and reducing the temperature gradient in the substrate to minimize stress in the substrate.

Abstract: A method involves increasing a temperature of a workpiece over a first time period to an intermediate temperature, and heating a surface of the workpiece to a desired temperature greater than the intermediate temperature, the heating commencing within less time following the first time period than the first time period. Another method involves pre-heating the workpiece from an initial temperature to an intermediate temperature, and heating a surface of the workpiece to a desired temperature greater than the intermediate temperature by an amount less than or equal to about one-fifth of a difference between the intermediate and initial temperatures. Another method involves irradiating a first side of the workpiece to pre-heat the workpiece to an intermediate temperature, and irradiating a second side of the workpiece to heat the second side to a desired temperature greater than the intermediate temperature.

Abstract: An objective of the present invention is to provide a ceramic heater making it possible to heat an object to be heated, such as a silicon wafer, evenly. The ceramic heater of the present invention is a ceramic heater having and a resistance heating element formed on the surface of the ceramic substrate or inside the ceramic substrate, wherein: said ceramic heater is equipped with: a temperature-measuring means measuring the temperature of said ceramic substrate and an object to be heated; a control unit supplying electric power to said heating element; a memory unit memorizing the temperature data measured by said temperature-measuring means; and an operation unit calculating electric power required for said heating element from said temperature, said ceramic heater being constituted such that said heating element is divided into at least 2 or more circuits and different electric power is supplied to each of the circuits of said resistance heating element.

Abstract: A method for heating a wafer to a predetermined temperature, the wafer being held by a holding unit and being accommodated in a processing container equipped with a heater. The wafer is heated to a processing temperature while positioning the wafer at an adjacent position that results form making the wafer approach the heating surface of the heater. After heating the wafer to the predetermined temperature, the wafer is separated from the flat bottom surface of the container body to a processing position. In this state, a processing chamber of the processing container is supplied with a processing fluid, while the holding unit and the heater are relatively moved close to and apart from each other intermittently or continuously. Accordingly, it is possible to quickly heat the substrate to a processing temperature while supplying the substrate with the processing fluid uniformly. This improves throughout and the homogenization in processing.

Abstract: A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.

Abstract: Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.

Abstract: A thermal insulator can change a heat insulation characteristic partially with a simple structure. The thermal insulator is divided into a plurality of parts in accordance with a temperature of a heat source which is insulated by the thermal insulator. The plurality of parts are formed of different honeycomb structures, respectively, so as to provide different heat insulation characteristics. The plurality of parts may be formed by different materials, or a shape or dimension such as a cell pitch of the honeycomb structure may be varied. Heat is collected from air within the honeycomb cells, and is transferred to other parts for heating.

Abstract: A bottom electric heating element for an oven wherein the electric heating element is positioned in a recessed portion in the oven bottom and has at least one corrugated ribbon of conductive material partially embedded in an insulating base. A glass panel is positioned over the recessed portion and on a compressible heat resistant gasket. The glass panel is transparent or semi-transparent, high temperature resistant and high impact resistant. A frame extends around the glass panel and fastens it to the oven bottom while partially and resiliently compressing the gasket to support the glass panel.

Abstract: A floating substrate reactor allows heat treatment of a series of semiconductor substrates, one by one. The heat treatment occurs while flowing gas suspends a substrate between two heated surfaces of the reactor. The two heated surfaces each have multiple heating zones. The heating zones are heated to desired temperature(s) and a substrate is then loaded into the reactor for heat treatment. Upon loading, the relatively cold substrate absorbs heat and cools the process chamber. A heat spike, which can be varied, is applied to the heating zones to heat the reactor to the desired temperature again. The substrate, however, is unloaded from the reactor before the temperatures of the heating zones have reached the desired temperature. After the heating zones have reached the desired temperature, the next substrate in the series of substrates is loaded into the reactor for heat treatment.

Abstract: A method involves pre-heating a workpiece to an intermediate temperature, heating a surface of the workpiece to a desired temperature greater than the intermediate temperature, and enhancing cooling of the workpiece. Enhancing cooling may involve absorbing radiation thermally emitted by the workpiece. An apparatus includes a first heating source for heating a first surface of a semiconductor wafer, a second heating source for heating a second surface of the semiconductor wafer, and a first cooled window disposed between the first heating source and the semiconductor wafer.

Abstract: Furnace cart assembly for loading high temperature vacuum furnaces for treating target material, for example, metal parts, under extreme temperature and vacuum environments. The furnace cart includes electrical heating elements as an integral part of the cart, which elements are adapted for releasable connection to the furnace electrical supply. When so connected the furnace cart heating elements can form a part of the heating system of the furnace. The lower part of the furnace cart assembly, including a frame above and supported on wheels, the frame having heat reflection means on at least Its upper surfaces providing some protection from heat is preferably also protected from heat during furnace operation by insulating material above the frame (the material desirably supported by the frame but separated therefrom).

Abstract: Each of a plurality of flash lamps forming a light source is a bar lamp having an elongated cylindrical shape. The ratio of the distance between the flash lamps and a semiconductor wafer to the distance between the flash lamps and a reflector is set to not more than 1.8 or at least 2.2. Consequently, illuminance is weakened on portions of the main surface of the semiconductor wafer located immediately under the flash lamps along the vertical direction and strengthened in portions located immediately under the clearances between adjacent ones of the flash lamps along the vertical direction, thereby reducing illuminance irregularity on the overall main surface of the semiconductor wafer and improving in-plane uniformity of temperature distribution on the semiconductor wafer. Thus, a thermal processing apparatus capable of improving in-plane uniformity of temperature distribution on a substrate is provided.

Abstract: An exhaust apparatus for evacuating vapor during baking of liquid chemicals deposited on substrates including a heating chamber containing a hot plate for horizontally supporting and heating a substrate. A cover plate is suspended horizontally over the hot plate; the cover plate has a plurality of exhaust ports extending from the top to its bottom surfaces. The ports are radially and evenly disposed midway between the periphery and a centered port with a manifold mounted to the top of the cover plate. The manifold has tubular conduits connected underneath to each exhaust port. Each conduit has an adjustable damper disposed at its front opening for regulating the vapor being exhausted. The tubular conduits converge from each exhaust port towards a common enclosure with an exhaust pipe coupled to its top for exhausting vapor to an external recovery facility.

Abstract: A wafer temperature estimator calibrates contact-type temperature sensor measurements that are used by a temperature controller to control substrate temperature in a high temperature processing chamber. Wafer temperature estimator parameters provide an estimated wafer temperature from contact-type temperature sensor measurements. The estimator parameters are refined using non-contact-type temperature sensor measurements during periods when the substrate temperature is decreasing or the heaters are off. A corresponding temperature control system includes a heater, a contact-type temperature sensor in close proximity to the substrate, and an optical pyrometer placed to read temperature directly from the substrate. A wafer temperature estimator uses the estimator parameters and measurements from the contact-type sensor to determine an estimated wafer temperature. A temperature controller reads the estimated wafer temperature and makes changes to the heater power accordingly.

Abstract: An apparatus for supporting a substrate in a processing system comprising a body and an upper top portion having a surface thereon adapted to minimize friction and/or chemical reactions between the substrate support and a substrate supported thereon.

Abstract: A heat treatment apparatus has a controller (100) provided with a temperature estimator (110) for estimating a temperature of a wafer by detection signals of temperature sensors (Sin, Sout) and a temperature calibrator (120) for correcting the estimated temperature of the wafer. In order to calibrate the temperature, an offset value stored in an offset table (122) is used. The offset value is determined based on the relationship between film-thickness of films formed in an experimental heat treatment process and process temperatures.

Abstract: To increase the temperature homogeneity on the surface of a substrate that is to be thermally treated, a method for thermally treating substrates is provided, according to which the substrate is heated by several separately controllable heating elements. A desired-value profile is predefined for each of said heating elements. The method comprises the following steps: locally-analysed measurement of the temperature of the surface of the substrate that faces away from the heating elements, during the thermal treatment; determination of the temperature inhomogeneities occurring on the substrate surface; definition of new desired-value profiles based on said temperature inhomogeneities; and preparation of the new desired-value profiles for subsequent treatments.

Abstract: An apparatus for supporting a substrate is described that has a ball adapted to minimize damage between the substrate support and the substrate supported thereon. In one embodiment, an apparatus for supporting a substrate includes ball disposed on an inclined ball support surface. The ball support surface is adapted to bias the ball toward one side of the ball support surface thereby providing space for the ball to roll as the substrate supported thereon changes in length when exposed to thermal influences. In another embodiment, the apparatus further comprises a cage adapted to capture the ball to the ball support surface.

Abstract: A vacuum oven for decontaminating items, a system incorporating multiple such vacuum ovens and a method of operating such system are provided. The ovens are portable. They can have a vacuum drawn in them and can be heated by being coupled to a vacuum and a power source, respectively at a first location and then be decoupled from the vacuum and power sources and moved to a second location such as a glove box or clean room while still maintaining a vacuum.

Abstract: A furnace for heat treating of metal parts includes a hot zone enclosure defining a hot zone therein. The hot zone enclosure has a side wall, a first end wall, and a second end wall. The side wall has slots formed therethrough and along the length thereof. The heat treating furnace also includes a system for injecting a cooling gas into the hot zone through the hot zone enclosure. The heat treating furnace further includes a damper arrangement for directing the cooling gas over a selected portion or portions of the workpiece load and through one or more of the slots. In one embodiment of the invention, all actuated components in the furnace are located outside of the hot zone to minimize damage to moving parts that are caused by exposure to extreme heat.

Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: A heated substrate support and method for making the same is generally provided. In one embodiment, a heated support includes a first and second plates having a heating element disposed therebetween. The heating element is biased against the first plate to provide good heat transfer therewith. In another embodiment, a heated support includes a first metallic plate coupled to a second metallic plate and sandwiching at least one guide therebetween. A resistive heating element is laterally retained by the guide relative to the first plate. In another aspect of the invention, a heating chamber for heating a substrate is provided. In one embodiment, the heating chamber includes walls defining an interior volume and a plurality of heated support plates coupled to the walls. The support plates are generally stacked parallel to each other within the interior volume. A heating element is urged against each first support plate.

Abstract: A plasma processing apparatus capable of processing the surface of a workpiece more precisely is provided. The plasma processing apparatus for supplying a gas between a sample and a sample table to generate plasma for processing the sample, comprises an adjusting device for changing a pressure supplied to a central side of the sample and a pressure of the gas supplied to an outer peripheral side as processing of the sample progresses.

Abstract: Tools supporting and heating device for tools like printing plates, used for diecutting and hot pressure transfer of portions of metallic films on a substrate. This device comprises a base plate applied against one of the sides of the honeycomb chase. This base plate is made of a sequence of at least one insulating surface and of at least one conducting surface enabling to feed at least one heating device intended to be inserted inside each one of said apertures in order to heat a printing plate fastened against a second side of the honeycomb chase.

Abstract: A wafer stage for use in a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The wafer stage enables performance of wafer processing while letting a wafer be mounted on the ceramic plate. The liquid cooling jacket enables attachment of the ceramic plate through a gap for circulation of a coolant gas as formed over the liquid cooling jacket, and a heat resistant seal material containing therein an elastic body for sealing the coolant gas between the liquid cooling jacket and the ceramic plate.

Abstract: A thermal processing system performs predetermined thermal processing on an approximately circular to-be-processed object, by applying radiant heat to the to-be-processed object by means of a heating lamp system. The heating lamp system comprises a plurality of lamps disposed concentrically so as to correspond to the to-be-processed object. The plurality of lamps are controlled individually for respective zones of the to-be-processed object.

Abstract: A substrate support ring has a band having an inner perimeter that at least partially surrounds a periphery of the substrate. The band has a radiation absorption surface. A lip extends radially inwardly from the inner perimeter of the band to support the substrate. The band and lip can be formed from silicon carbide, and the radiation absorption surface can be an oxidized layer of silicon carbide. In one version, the band and lip have a combined thermal mass Tm, and the radiation absorption surface has an absorptivity A and a surface area Sa, such that the ratio (A×Sa)/Tm is from about 4×10?5 m2K/J to about 9×10?4 m2K/J.

Abstract: A thermal processing system for heating a to-be-processed object while rotating the to-be-processed object by a placement part, and for performing thermal processing on the to-be-processed object by supplying a predetermined gas into a processing chamber. An outer ring part provided outside the processing chamber and an inner ring part provided inside the processing chamber have pluralities of circumferentially arranged magnetic poles. The magnetic poles apply magnetic forces between the outer ring part and inner ring part so that the inner ring part will follow the rotation of the outer ring part. The number of magnetic poles of the outer ring part and inner ring part are selected to achieve an allowable angular error when between the outer ring part and inner ring part during rotation.

Abstract: A system, method and apparatus for processing a semiconductor device including a processing chamber and a heating assembly positioned within the processing chamber. The heating assembly including at least a plate defining an internal cavity configured to receive gas. The gas enters the internal cavity through a first passage at a first temperature, and exits the internal cavity at a second temperature through a second passage.

Abstract: A process for annealing large-area multilayer bodies by supplying a quantity of energy at an annealing rate of at least 1° C./s. To suppress temperature inhomogeneities during the annealing, different partial quantities of the quantity of energy are supplied to the layers of the multilayer body with a local and temporal resolution. The multilayer body is annealed in a container which has a base and a cover made from glass-ceramic. The process is used to produce a thin-film solar module.

Abstract: A plurality of flash lamps are covered with a reflector. Optical fiber members are attached to the reflector on portions located immediately above the flash lamps. When the flash lamps emit flash light toward a semiconductor wafer, the optical fiber members partially guide the emitted light so that a CCD measures the intensity of light emitted from each of the plurality of flash lamps. A computer detects the emission state of each of the plurality of flash lamps on the basis of a result of measurement. At this time, the computer compares standard luminous intensity obtained when the irradiation state on the semiconductor wafer satisfies a prescribed criterion with the luminous intensity in actual processing for detecting the emission states of the plurality of flash lamps. Thus provided is a thermal processing apparatus capable of reliably and simply detecting deterioration of lamps.

Abstract: A system and method for isothermally distributing a temperature across a semiconductor device. A furnace assembly is provided, which includes a processing tube configured to removably receive a wafer carrier having a full compliment of semiconductor wafers. A heating assembly is provided which can include a heating element positioned to heat air or other gases allowed to enter the process tube. The furnace assembly and process tube are capable of being vertically raised and lowered into a position enclosing the heating assembly within the process tube. Once the heating assembly forms a seal with the process tube, the process tube is exhausted and purged of air. Gas is then allowed to flow into the process tube and exchange heat with the heating element. The heated gas circulates through the process tube to convectively change the temperature of the wafers.

Abstract: A vacuum oven with heat transfer fluid conduits. The oven of the invention generally includes a shell into which a removable rack may be placed. The rack has at least one plate which may be heated or cooled by a plate fluid conduit in contact with the plate and through which a heating or cooling fluid may be passed. Work pieces may be loaded in the rack, the rack placed in the shell, the shell sealed, and a vacuum drawn within the shell. The work pieces loaded on the rack are primarily heated and cooled by conductive and radiant heat transfer because of the limited amount of thermally conductive gases within the shell.

Abstract: An apparatus for processing a semiconductor substrate, including a process chamber having a plurality of walls and a substrate support to support the substrate within the process chamber. A radiative heat source is positioned outside the process chamber to heat the substrate through the walls when the substrate is positioned on the substrate support. In some embodiments, lenses are positioned between the heat source and the substrate to focus or diffuse radiation from the heat source and thereby selectively alter the radiation intensity incident on certain portions of the substrate. In other embodiments, diffusing surfaces are positioned between the heat source and the substrate to diffuse radiation from the heat source and thereby selectively reduce the radiation intensity incident on certain portions of the substrate.

Abstract: A heat treatment apparatus achieves a uniform and rapid temperature rise of an object to be processed. A plurality of double-end lamps heat the object to be processed so as to apply a heat treatment process to the object. A plurality of reflectors reflect radiation heat of the double-end lamps toward the object to be processed. Each of the double-end lamps includes a rectilinear light-emitting part and at least two double-end lamps among the plurality of double-end lamps are arranged along a longitudinal direction of the light-emitting part, or each of the double-end lamps includes a rectilinear light-emitting part and the plurality of double-end lamps are arranged so that the light-emitting parts are parallel to each other and positioned in at least two stages.