Abstract: A control unit can select a large-number control zone model in which the number of control zones, which are independently controlled, is large, and a small-number control zone model in which the number of control zones, which are independently controlled, is small. When a temperature is increased or decreased, the control unit can select the small-number control zone model so as to control, based on signals from temperature sensors of the respective control zones C1 . . . C5 whose number is small, heaters located on the respective control zones C1 . . . C5. When a temperature is stabilized, the control unit can select the large-number control zone model so as to control, based on signals from the temperature sensors of the respective control zones C1 . . . C10 whose number is large, the heaters located on the respective control zones C1 . . . C10.

Abstract: A heat treatment apparatus with a process chamber, a tubular heater, a heat exhaust system and a cooling section. The heater surrounds an outer circumference of the process chamber. The heat exhaust system exhausts an atmosphere in a space between the heater and the process chamber. The cooling section blows a cooling fluid into the space to cool the atmosphere. The heater includes a tubular heat insulator, a heat generating resistor on an inner circumference of the heat insulator, and an outer shell provided on an outer circumference of the heat insulator. The cooling section includes at least one annular flow path between the heat insulator and the outer shell, and an outlet in the heat insulator. The outlet blows cooling fluid toward a vertical central axis of the heat insulator, or in a direction oblique to the direction toward vertical central axis of the heat insulator.

Abstract: A substrate heating apparatus includes a top plate arranged above a hot plate so that a vertical space is formed between the hot plate and the top plate. The top plate has an evacuated internal chamber serving as a vacuum insulating layer that suppresses heat transfer from a first surface of the top plate facing the hot plate to a second surface of the top plate opposite to the first surface. When heating the substrate, a gas flow flowing through the space between the hot plate and the top plate is generated.

Abstract: The present invention relates to a dental firing furnace having a firing space and at least one carrier for dental material, in particular a muffle, which can be loaded into the firing space, and, in particular, a pressing device for pressing a ceramic blank inserted in the muffle, at least one physical variable of the firing space and/or of the carrier and/or of the muffle and/or of the ceramic blank being detected. A processing program of the dental furnace (10) that can be set is based on the detected physical variable.

Abstract: A method and apparatus for thermally processing a substrate is provided. In one embodiment, a method for thermally treating a substrate is provided. The method includes transferring a substrate to a chamber at a first temperature, the chamber having a heating source and a cooling source disposed in opposing portions of the chamber, heating the substrate in the chamber during a first time period to a second temperature, heating the substrate in the chamber to a third temperature during a second time period, and cooling the substrate in the chamber to a fourth temperature that is substantially equal to the second temperature during the second time period, wherein the second time period is about 2 seconds or less.

Abstract: A heat treating apparatus utilizes a straightening plate provided in its central part with a gas exhaust opening and disposed under a heating plate. A temperature-reducing purge ring is disposed between the face plate and the straightening plate, and is provided in its inner circumference with plural gas jetting holes. A thin gap is formed between the temperature-reducing purge ring and the face plate. When a cooling gas is jetted radially inward through the gas jetting holes, a vacuum is created between the lower surface of the face plate and the upper surface of the temperature-reducing purge ring. Air is sucked into the space between the face plate and the straightening plate and flows together with the cooling gas to rapidly cool the face plate.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract: A disclosed heating apparatus includes a heating chamber configured to heat a substrate placed in the heating chamber with a heat plate opposing the substrate; a gas stream forming portion that creates a gas stream along a top surface of the substrate in the heating chamber; and a pair of first plate members respectively located between an inner side wall of the heating chamber and a first substrate edge opposing the inner side wall, and between another inner side wall of the heating chamber and a second substrate edge opposing the other inner side wall.

Abstract: Embodiments of the invention provide a thermal processing system and methods for uniformly heating and/or cooling a semiconductor wafer. Embodiments of the invention may be applied to provide a more uniform temperature profile when processing 300 mm and larger wafers having different curvature profiles that occur at the same and/or different points in a manufacturing cycle. Wafer curvature can be dependent on the number and thickness of the metal layers.

Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.

Abstract: A vacuum chuck and a process chamber equipped with the same are provided. The vacuum chuck assembly comprises a support body, a plurality of protrusions, a plurality of channels, at least one support member supporting the support body, at least one resilient member coupled with the support member, a hollow shaft supporting the support body, at least one electrical connector disposed through the hollow shaft, and an air-cooling apparatus. The support body has a support surface for holding a substrate (such as a wafer) thereon. The protrusions are formed on and project from the support surface for creating a gap between the substrate and the support surface. The channels are formed on the support surface for generating reduced pressure in the gap. The air-cooling apparatus is used for providing air cooling in the vicinity of the electrical connector.

Abstract: A mounting table structure arranged in a processing chamber is provided for mounting a target object to be processed on the upper surface. The mounting table structure is characterized in having a mounting table wherein a heating unit are embedded to heat the target object to perform a specified heat treatment to the target object, and a supporting column which stands on the bottom portion of the processing chamber and supports the mounting table. The mounting table structure is also characterized in that a heat-equalizing member spread in a planar direction is embedded above the heating unit in the mounting table.

Abstract: A heating apparatus comprises heating elements arranged of a sheet form and having notches or through holes provided therein, a side wall member made of an electrically conductive material and arranged to surround and define the heating space, and holding members disposed at the heating space side of the side wall member for holding at one end the heating elements. Also, extending members are provided, each member comprising an extending-through portion arranged to project from the heating space side of the side wall member and extend through the notch or through hole between both ends in the heating element and projected portions arranged to project at both, front and back, sides of the heating element from the extending-through portion in a direction, which is orthogonal to the extending direction of the extending-through portion, thus to inhibit the displacement of the heating elements along the extending direction.

Abstract: Disclosed herein is method for use in a vertical heat treatment system which has an opening which is formed in a partition wall separating a housing-box transfer area from a treating-object transfer area (a wafer transfer area), and and through which an object to be treated is carried in the vertical heat treatment system to carry out a predetermined treatment. When the object to be treated is carried in via the opening of the partition wall, which separates the housing-box transfer area from the treating-object transfer area (wafer transfer area), to carry out a predetermined treatment, the structure of various mechanisms in the vicinity of the opening is simplified, and the space is saved.

Abstract: An apparatus for soft baking a substrate having a dummy region is provided. The apparatus includes a heating plate, a plurality of pins, and a driving unit for individually lifting selective ones of the plurality of pins so as to protrude from an upper surface of the heating plate.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: Deterioration of an O ring due to radiation heating in a vacuum heating apparatus is prevented to allow heat treatment of a substrate with good annealing properties. The vacuum heating apparatus 1 includes a vacuum chamber 2 constituted by flanges 11 and 12 having an opening portion 9 and joined together, a turbo molecular pump 17 for exhausting gas from the vacuum chamber 2, and a heater base 3 for heating a substrate 5 placed in the vacuum chamber 2. Joint surfaces of the flanges 11 and 12 are sealed by an O ring 10. Further, bonding steps 13 are formed between the heater base 3 and the O ring 10 on the joint surfaces of the flanges 11 and 12, thereby preventing thermo-radiation from the heater base 3 from reaching the O ring 10 through the joint surfaces of the flanges 11 and 12.

Abstract: Apparatus and methods that minimize surface defect development in silicon wafers during thermal processing at relatively high temperatures at which silicon wafers are annealed and at less extreme temperature, or for other purposes. The apparatus and methods have utility to horizontally-disposed furnaces for silicon wafers and to vertically-oriented furnaces in which larger wafers can be thermally processed. A selectively-sealable process tube encloses silicon wafers during heating of the silicon wafers to a predetermined temperature, and a heating atmosphere supply system induces through the process tube a positive flow of a process gas, such as hydrogen or argon, that is non-reactive with solid silicon at the predetermined temperature. A process tube outlet vents gas from the process tube, and an impurity sensor in the process tube outlet detects oxygen and moisture in the vented gas to verify the purity of the atmosphere surrounding the wafers during thermal processing.

Abstract: A heater assembly configured to elevate a temperature of a processing element in a chemical treatment system is described. The heater assembly may be configured to uniformly heat a large area processing element, such as a processing element that spans a plurality of substrates. Additionally, for example, the heater assembly may be configured to elevate a temperature of an upper assembly, a gas injection assembly, a substrate holder, a chamber wall, or any combination of two or more thereof.

Abstract: There is disclosed a heating element 10 comprising: at least a heat-resistant base member 1; a conductive layer 3 having a heater pattern 3a formed on the heat-resistant base member; a protection layer 4 with an insulating property formed on the conductive layer; and a corrosion-resistant layer 4p having a nitrogen gas permeability of 1×10?2 cm2/sec or less or being made of a compound containing a dopant formed on the protection layer 4.

Abstract: A cooling system for a dental porcelain furnace speeds up the cycle time for the furnace.

Abstract: To provide a photo-irradiation type heat treatment apparatus that eliminates the adverse influence of a light transmitting window on the temperature distribution of an article to be treated without losing the original function of a reflecting mirror a photo-irradiation type heat treatment apparatus in which heat treating of an article is performed by irradiating the article with light emitted from multiple filament lamps through a light transmitting window, by providing the apparatus with a reflecting mirror having an opening at its central area so that cooling air can pass therethrough and by providing an air permeable reflector so as to cover the opening in the reflecting mirror.

Abstract: In a built-in drawer type cooking device, an open/close door 2a and a heating container 2b that constitute a drawer body 2 are separably connected to each other. The open/close door 2a and the heating container 2b are connected via an insulator 10 to prevent a discharge phenomenon due to emission of microwaves. The open/close door 2a and the heating container 2b can be separated from each other with the drawer body 2 being drawn out, and thus the heating container 2b can be taken out of the cooking device and cleaned or wholly washed. An inner wall surface of a heating chamber 3 that is easily contaminated can be cleaned while being visually checked. The heating container 2b and the open/close door 2a are separately produced, and can be individually stored, conveyed and stacked, thereby reducing a rejection rate due to deformation and increasing productivity in an assembling process.

Abstract: A substrate heating apparatus includes a top plate arranged above a hot plate so that a vertical space is formed between the hot plate and the top plate. The top plate has an evacuated internal chamber serving as a vacuum insulating layer that suppresses heat transfer from a first surface of the top plate facing the hot plate to a second surface of the top plate opposite to the first surface. When heating the substrate, a gas flow flowing through the space between the hot plate and the top plate is generated.

Abstract: A substrate processing apparatus comprises: an outer tube; a manifold connected to the outer tube and made of a non-metal material; an inner tube disposed in the manifold at a more inner side than the outer tube and configured to process a substrate therein; a heating device installed at a more outer side than the outer tube and configured to heat the inside of the outer tube; a lid configured to open and close an opening of the manifold, with a seal member intervened therebetween; and a heat absorption member installed in the manifold, with a bottom end of the inner tube intervened therebetween, and configured to absorb heat from the heating device, the heat absorption member being made of a non-metal material.

Abstract: Provided is an apparatus and a method for heating fluid in a proximity head. A fluid source supplies fluid to a channel within the proximity head. The fluid flows in the channel, through the proximity head, to an outlet port located on a bottom surface of the proximity head. Further, within the proximity head is a heating portion that heats the fluid. Various methods can heat the fluid in the heating portion. For example, the fluid can be heated via resistive heating and heat exchange. However, any mechanism for heating fluid in the proximity head is possible. After heating the fluid, the proximity head delivers the heated fluid through the outlet port to a surface of a semiconductor wafer. An inlet port proximately disposed near the outlet port vacuums the heated fluid to remove the heated fluid from the surface of the semiconductor wafer.

Abstract: Provided are a substrate processing apparatus, a heating device, and a semiconductor device manufacturing method. The substrate processing apparatus comprises a process chamber configured to process a substrate. A heating element is installed at a peripheral side of the process chamber. An annular inner wall is installed at a peripheral side of the heating element. An annular outer wall is installed at a peripheral side of the inner wall with a space being formed therebetween. An annular cooling member is installed at the space for cooling. An actuating mechanism moves the cooling member between a contacting position where the cooling member makes contact with at least one of the inner wall and the outer wall and a non-contacting position where the cooling member does not make contact with any one of the inner wall and the outer wall. A control unit controls at least the actuating mechanism.

Abstract: An electrostatic chuck heater is provided including a base which is formed by applying conductive paste containing a binder to upper and lower surfaces of an alumina sintered body to print an electrostatic electrode and heater electrode, calcining the alumina sintered body, arranging alumina powder above the electrostatic electrode and alumina powder below the heater electrode, and pressing the alumina powder and alumina sintered body in the above state for pressure sintering. The diffusion area ratio of the conductive material near the electrostatic electrode in the dielectric layer is set to not more than 0.25%.

Abstract: A heat-treating plate has support elements projecting from an upper surface thereof. The support elements are located at apexes of equilateral triangles arranged regularly and continually. The heat-treating plate and a substrate placed on the support elements form a minute space therebetween which is sealed by a sealer. The substrate is sucked by reducing the pressure in the minute space to a negative pressure through exhaust bores. Since all the distances between adjoining support elements are equal, the substrate sags in the same amount between these support elements. With such arrangement of the support elements, sagging of the substrate is inhibited efficiently by a reduced number of support elements.

Abstract: A substrate processing apparatus of which through holes in a mounting stage can be properly sealed. A substrate processing apparatus comprises a plate-like mounting stage having a plurality of first through holes, a base member including a plurality of second through holes that have female thread portions, a plurality of pin-shaped members being passed through and fitted into the first and second through holes and including flange portions, a plurality of sealing surfaces, and a plurality of sealing members disposed such as to enclose openings of the first through holes. One ends of the pin-shaped members project out from the sealing surfaces, and the other ends have male thread portions capable of engaging with female thread portions of the base member. When the base member moves away from the mounting stage, an end of each of the female thread portions comes into abutment with an end of each of the male thread portions.

Abstract: The present invention provides a vertical heat treatment boat that has at least four or more support portions per processing target substrate to be supported, the support portions horizontally supporting the processing target substrate, support auxiliary members on which the processing target substrate is mounted being detachably attached to the four or more support portions, respectively, wherein flatness obtained from all surfaces of the respective support auxiliary members on which the processing target substrate is mounted is adjusted by adjusting thicknesses of the support auxiliary members or interposing spacers between the support portions and the support auxiliary members in accordance with respective shapes of the four or more support portions.

Abstract: Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.

Abstract: A heating device for manufacturing semiconductor capable of uniformly heating a wafer or other materials to be treated, and in particular a heating device in a coater-developer used for heat-hardening of resin film for photolithography and for heat-calcining of low-dielectric constant insulating film, is provided. A device of this invention comprises a ceramic holder 1 having a resistive heating element 2 embedded therein, which holds and heats a wafer 6 or another material to be treated; a cylindrical support member 4 which supports the ceramic holder 1; and a chamber 5 which houses these. The support member 4 and ceramic holder 1 are not hermetically sealed, or alternatively the atmospheres within the cylindrical support member 4 and within the chamber 5 are maintained to be substantially the same by adjusting the introduction and evacuation of gas.

Abstract: Embodiments of the present invention provide apparatus and method for reducing noises in temperature measurement during thermal processing. One embodiment of the present invention provides a chamber for processing a substrate comprising a chamber enclosure defining a processing volume, an energy source configured to direct radiant energy toward the processing volume, a spectral device configured to treat the radiant energy directed from the energy source towards the processing volume, a substrate support disposed in the processing volume and configured to support the substrate during processing, and a sensor assembly configured to measure temperature of the substrate being processed by sensing radiation from the substrate within a selected spectrum.

Abstract: A substrate supporting mechanism includes a function for heating a substrate placed thereon in a process container of a substrate processing apparatus. The substrate supporting mechanism includes a worktable configured to place the substrate thereon and including a heating element made of silicon carbide and formed in a predetermined pattern; an electric feeder electrode configured to supply electricity to the heating element; and a partition member made of an electrically insulating material and interposed between portions adjacent to each other in the heating element formed in the predetermined pattern.

Abstract: In a heat treatment apparatus, a reflector is provided to cover a plurality of flash lamps arranged in an array for emitting a flash of light, and a cooling box is provided over the reflector. The cooling box has a buffer space incorporated therein, and a plurality of jet openings in communication with the buffer space are formed through a bottom surface of the cooling box and the reflector. The plurality of jet openings are positioned just over gaps between the plurality of flash lamps in the lamp array. Nitrogen gas ejected from the plurality of jet openings passes through the gaps between adjacent ones of the flash lamps in the lamp array, and is then blown against a lamp light radiation window. The flash lamps are effectively cooled down by the direct cooling using the nitrogen gas and the decrease in temperature of the lamp light radiation window.

Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

Abstract: There is disclosed a heating element 10 comprising: at least a heat-resistant base member 1; a conductive layer 3 having a heater pattern 3a formed on the heat-resistant base member; a protection layer 4 with an insulating property formed on the conductive layer; and a corrosion-resistant layer 4p that is an oxide having an oxygen amount of stoichiometric ratio or less formed on the protection layer. There can be provided a heating element in which a corrosion-resistant layer whose resistivity or hardness is controlled is formed on a protection layer and through which the corrosive gas is difficult to be transmitted even under an environment of a high temperature and a corrosive gas and by which degradation due to corrosion of a conductive layer, particularly, a power-supply-terminal portion can be avoided and additionally which can fulfill a high function as an electrostatic chuck even when having a chuck pattern and which has a long operation life and is capable of being produced at a low cost.

Abstract: In a heat treatment method in which a semiconductor wafer is carried into a heat treatment chamber constituted of a heat plate and a cover body covering the heat plate and processed, until the wafer is carried into the heat treatment chamber, an opening and closing operation of the cover body is performed to maintain the accumulated heat temperature of the heat treatment chamber at a prescribed processing temperature.

Abstract: A heat treatment apparatus capable of ensuring a uniform temperature distribution on a substrate and reducing the generation of a sublimate includes a housing, a mounting table being arranged to move up and down within the housing, and a first heater being provided on the mounting table to heat a substrate placed on the mounting table, a second heater is provided on one side of the housing while an exhaust device is provided on the other side of the housing.

Abstract: A heat exchange apparatus including a heat exchanging portion capable of conforming to the outer surface of a heat exchange target.

Abstract: A heat-processing furnace comprises: a processing vessel for housing an object to be processed to thermally heat the object to be processed; a cylindrical heat insulating member surrounding the processing vessel; a helical heating resistor disposed along an inner circumferential surface of the heat insulating member; and support members axially disposed on the inner circumferential surface of the heat insulating member, for supporting the heating resistor at predetermined pitches. A plurality of terminal plates are disposed outside the heating resistor at suitable intervals therebetween and attached to the heating resistor, the terminal plates radially passing through the heat insulating member to be extended outside. A plurality of fixing plates are disposed outside the heating resistor at suitable intervals therebetween and attached to the heating resistor, the fixing plates being fixed in the heat insulating member.

Abstract: In an embodiment, heat treatment equipment comprises a process tube, an exhaust duct connected to the process tube, and, during operation, exhausting gases present within the process tube. The heat treatment equipment also comprises a hollow pressure control member interposed between the process tube and the exhaust duct, the pressure control member being operatively connected to the process tube and the exhaust duct respectively, and including one or a number of openings. Negative pressure is avoided in the process tube during heat treatment processes so that unwanted gas and impurities cannot enter the process tube from outside.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract: A heating apparatus cooling a substrate heated by a hot plate at a cooling position adjacent to the hot plate, capable of achieving a smaller height and reducing an operation time in the apparatus, in which contamination of the substrate by particles or the like is less likely, and the like, are provided. The heating apparatus includes a hot plate for heating a wafer representing a substrate from below, in a heating chamber having a wafer load/unload port. In addition, a wire for transferring the wafer between a cooling position of the substrate adjacent to the load/unload port of the heating chamber (position above a cooling plate) and a position above the hot plate is provided and extends. The wafer is mounted on a gap forming member provided on the wire, and thereafter loaded into the heating chamber.

Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, a substrate support opposing the temperature controlled support base and configured to support the substrate, and one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature. An erosion resistant thermal insulator disposed between the temperature controlled support base and the substrate support, wherein the erosion resistant thermal insulator includes a material composition configured to resist halogen-containing gas corrosion.

Abstract: A cooking appliance for cooking a foodstuff over a period of time including a shell having a heating cavity and a heating element to heat the heating cavity. A container is removably positionable within the heating cavity and includes a food cavity for receiving the foodstuff. A temperature probe is removably insertable into the foodstuff and a controller is mounted to the shell. The controller controls operation of the cooking appliance in a probe mode wherein the temperature probe is inserted into the foodstuff and transmits foodstuff temperatures to the controller for controlling the heating of the foodstuff, a program mode wherein the controller actuates the heating element to heat the container at a temperature for a selected amount of time and subsequently at a lower temperature and a manual mode wherein the controller actuates the heating element to heat the container at a selected temperature.

Abstract: A substrate heating apparatus includes a top plate arranged above a hot plate so that a vertical space is formed between the hot plate and the top plate. The top plate has an evacuated internal chamber serving as a vacuum insulating layer that suppresses heat transfer from a first surface of the top plate facing the hot plate to a second surface of the top plate opposite to the first surface. When heating the substrate, a gas flow flowing through the space between the hot plate and the top plate is generated.

Abstract: A method and apparatus for thermally processing a substrate is described. The apparatus includes a substrate support configured to move linearly and/or rotationally by a magnetic drive. The substrate support is also configured to receive a radiant heat source to provide heating region in a portion of the chamber. An active cooling region comprising a cooling plate is disposed opposite the heating region. The substrate may move between the two regions to facilitate rapidly controlled heating and cooling of the substrate.

Abstract: An approach for optimizing the thermal budget during a pulsed heating process is disclosed. A heat sink or thermal transfer plate is configured and positioned near an object, such as a semiconductor wafer, undergoing thermal treatment. The heat sink is configured to enhance the thermal transfer rate from the object so that the object is rapidly brought down from the peak temperature after an energy pulse. High thermally-conductive material may be positioned between the plate and the object. The plate may include protrusions, ribs, holes, recesses, and other discontinuities to enhance heat transfer and avoid physical damage to the object during the thermal cycle. Additionally, the optical properties of the plate may be selected to allow for temperature measurements via energy measurements from the plate, or to provide for a different thermal response to the energy pulse. The plate may also allow for pre-heating or active cooling of the wafer.