Abstract: A thermal processing apparatus for a semi-conductor wafer. A holder is provided within a processing vessel on which the wafer to be processed is placed. Upper and lower heaters are provided above and below the holder in order to heat the wafer. Each of the heaters are attached within heating vessels. A gas supply head supplies a processing gas in a shower form between the upper heater and the holder. The uniformity of the surface temperature of the wafer is improved by heating the wafer from both above and below.

Abstract: A novel technique for measuring the temperature of an electronic circuit undergoing assembly packaging processes includes a non-contact infrared detector which is used to measure the temperature of the die allowing a control systems to directly adjust the die temperature. Previous to this invention, the die temperatures were controlled indirectly, typically by controlling ambient temperature in an oven or furnace to a series of set point values during curing of the electronic packaging materials.

Abstract: A heat cooking device is provided with a heater. The heater is formed of a case member, a base filling the case member, and a heat emitting member provided on one side of the base. The base is formed of insulator. An outer periphery of the heat cooking device is covered by an exterior portion. The base is positioned between the exterior portion and the heat emitting member. Thus, less heat from the heat emitting member is transferred to the exterior portion when the heat emitting member is used to heat food.

Abstract: A thermal reflow processing system has a rotatable structure to which articles having a reflowable surface are attached. The structure is coupled to a drive motor which causes the structure to rotate at speeds which generate centripetal forces in excess of that of gravity. The system is equipped with at least one radiant heat source. As the articles are being subjected to a centripetal force, the surface is heated by the radiant heat source. In a preferred embodiment, the structure is a hermetically-sealable chamber which can be pressurized or evacuated. The articles, which may be semiconductor wafers, are positioned on the rotating structure such that the surface to be reflowed faces both the heat source and the structure's rotational axis. In the case of circular semiconductor wafers, the wafers are positioned such that the planar surface of each wafer is centered on and perpendicular to a radius of the cylindrical chamber.

Abstract: A vacuum heating furnace comprises a translucent container for retaining a heated object and a heating light source for heating a heated object retained in the translucent container. The translucent container has on its surface a tapered portion to receive transmitted light totally reflected on the inner surface of the translucent container at an angle smaller than a critical angle.

Abstract: A showerhead for introducing gas from one or more external supplies into a substrate processing chamber, the showerhead including a faceplate including a plurality of gas injection ports through which gas is injected into the chamber, wherein the plurality of gas injection ports includes a first subset of gas injection ports and a second subset of gas injection ports; a first gas distribution system which during use delivers a first gas to the first subset of injection ports for injection into the chamber; and a second gas distribution system which during use delivers a second gas to the second subset of injection ports for injection into the chamber.

Abstract: In a method for the arc-like shaping of an extruded profiled strand of plastic material at least a section of the strand is heated in a hot air chamber together with a support ledge disposed in spaced relationship from the profiled strand to a temperature permitting the bending of the profiled strand and the strand is then firmly engaged between a support ledge at the inner compression side and a support profile at the other, that is the tension side of the profile strand to form a package, which is then bent while the temperature at the compression side of the profile strand is higher than the temperature at the tension side thereof to prevent the formation of waves in the profile strand walls. The invention also resides in a heating apparatus, which provides for the temperature difference at opposite sides of the profile strand and includes means for engaging the profile strand during bending.

Abstract: A browning grill is arranged for use in a high power density radiant oven. The oven includes a cooking enclosure having a ceiling and a floor, upper radiant energy sources located near the ceiling, and lower radiant energy sources located near the floor. The browning grill has a grilling surface and a debris collector. The grilling surface has a plurality of grill tines. The grilling surface is located between the upper and lower radiant energy sources, and the grilling surface establishes a cooking plane to the upper radiant energy sources. The debris collector catches food debris from food being grilled on the grilling surface. The debris collector is located between the grilling surface and the lower radiant energy sources, and the debris collector is arranged to permit heating of the cooking plane by the lower radiant energy sources.

Abstract: A heating light source for a heat treatment device of the light irradiation type with high temperature uniformity on the wafer surface during heating and a small operating current and a lamp which is used for the heating light source. By using a light source in which several annular lamps are arranged concentrically within the same plane the need for a large device due to large currents is obviated. By arranging nonemission parts distributed over the entire peripheral direction of an annular filament lamp and not only on one side, and by arranging these filament light sources in the radial direction of a lamp in which several of these light sources are used distributed and not on one side, the irradiance on the entire wafer surface is made essentially uniform.

Abstract: A single-substrate-heat-treatment apparatus heats a semiconductor wafer by scanning the wafer with light having high energy density. Light emitted by a light source is reflected by a reflection mirror mechanism, and is then focused on the surface of the wafer on a work table via a transparent window of a process chamber. During heat treatment, the work table or reflection mirror mechanism is moved to scan the wafer surface with the light coming from the light source.

Abstract: A lightwave oven for cooking with light having wavelengths in the visible, near visible, and infra-red spectral ranges uses one or more quartz halogen tungsten lamps or quartz arc bulbs positioned above and below the food item and delivers light energy in select ranges of the electromagnetic spectrum during select portions of the cooking cycle.

Abstract: The present invention provides a method for recovering flatness of a web material which comprises heating a side edge portion of the web material at a temperature in a range from a glass transition temperature minus 40.degree. C. to a melting point of the web material for a period of from 1 to 600 seconds, and an apparatus for recovering flatness of a web material which comprises a plurality of conveying rollers for conveying the web material and a side edge portion heating means which surrounds and heats the side edge portion of the web material traveling through conveying rollers. According to the method and apparatus, the side edge portion(s) elongated by the previous heat treatment is recovered to a state similar to the central portion by reheating to correct the side edge portion(s), and thereby, flatness of the web material can be improved.

Abstract: The invention relates to a method and apparatus for the localization or focusing of heating in a tempering furnace for glass panels. Glass panels are carried and supported in a furnace (2) by rollers (11). The furnace is provided with upper and lower nozzle boxes (4, 14), including nozzle heads (5, 15) for blasting hot convection air to heat the glass panels to a tempering temperature. The arrival of a load in the furnace is preceded by reading a load picture and by controlling radiation heat resistances (10) present in the furnace in such a way that radiation heating can be focused on the central areas of critical glass panels to provide extra heating therefor.

Abstract: A method and apparatus for controlling the radial temperature gradients of a wafer and a susceptor while ramping the temperature of the wafer and susceptor using a first heat source that is primarily directed at a central portion of the wafer, a second heat source that is primarily directed at an outer portion of the wafer, a third heat source that is primarily directed at a central portion of the susceptor, and a fourth heat source that is primarily directed at an outer portion of the susceptor. Ramping of the wafer and susceptor temperature is accomplished by applying power to the first, second, third and fourth heat sources. During ramping, the ratio of the first and second heat source powers is varied as a function of the wafer temperature and the ratio of the third and fourth heat source powers is varied as a function of the susceptor temperature.

Abstract: The present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semiconductive wafer, by sensing and measuring the object radiation being emitted at a particular wavelength. In particular, a reflective device is placed adjacent to the radiating object, which causes thermal radiation being emitted by the wafer to be reflected multiple times. The reflected thermal radiation is then monitored using a light detector. Additionally, a reflectometer is contained within the system which independently measures the reflectivity of the object. The temperature of the object is then calculated using not only the thermal radiation information but also the information received from the reflectometer.

Abstract: One embodiment of the instant invention is a process chamber for heating a semiconductor wafer, the process chamber comprising: heating elements (elements 104 of FIG. 2a) for providing heating energy; means for holding (means 112 of FIG. 2a) the semiconductor wafer; and shutters situated between the heating elements and the means for holding the semiconductor wafer, the shutters (shutters 108 of FIGS. 2a and 2b and shutters of FIGS. 2c and 2d for blocking the heating energy from getting to the semiconductor wafer when the shutters are in a closed position and for directing the heating energy to the semiconductor wafer when in an open position.

Abstract: An apparatus for heating, according to a predetermined heating profile, a surface carrying a film. The invention includes a source of radiant energy. The source of radiant energy has several peak wavelengths, with each peak wavelength having a unique absorption profile related to the thickness of the film. The source of radiant energy is positioned to direct radiant energy toward the surface. Means are included for holding the source of radiant energy in a manner such that the combination of peak wavelengths produce the desired predetermined heating profile.

Abstract: A substrate heating apparatus having a housing forming a substrate receiving chamber and a heater located inside the chamber. The heater has a thin film flat ribbon heater element sandwiched between two glass-ceramic panels.

Abstract: A RTP system and method. A first lamp zone (108) is located around a periphery of a wafer (102) for heating the center of the wafer (102) and a second lamp zone (114) is located around the periphery of the wafer (102) for heating the edge of the wafer (102). The chamber (104) includes highly reflective surfaces (106). Light from the first and second lamp zones (108, 114) is reflected off of the highly reflective surfaces (106) at least three time before reaching the wafer (102). Thus, the wafer (102) is isotropically heated and uniform wafer heating is achieved.

Abstract: A kiln, useful for sintering basemetal capacitors comprises an inner zone having vertically oriented gas dispersion conduits for the inlet and radial dispersion of gas and vertically oriented electrical heating elements. Each gas dispersion conduit comprises a porous or perforated inner tube for a porous or perforated outer tube concentrically positioned around the inner tube. The annular space between is filled with a porous refractory medium, such as a bulk ceramic fiber. The temperature of the inner zone is controlled by the electrical heating elements. The gas is evenly heated as it passes radially from the inner tube through the porous refractory medium and then through the outer tube. Surrounding the inner zone is a multiplicity of stacks of substantially horizontally-oriented trays on which the material or articles to be sintered or otherwise treated are placed. The circle of stacks of trays is surrounded by an outer heating zone comprising an outer ring of electrical heating elements.

Abstract: In general, the present invention provides a single thermal cycling module for baking and chilling a substrate, such as a wafer, that is in thermal contact with a foil heater, a heat exchanger, and a radiation heater. The radiation heater thermally heats a fluid contained by the heat exchanger, which in turn, thermally bakes the substrate at a desired temperature. When the radiation heater is deactivated, a fluid circulates through the heat exchanger to chill the substrate. The foil heater assists the baking and chilling phases by elevating the temperature of the substrate when necessary to prevent or regulate temperature fluctuations of the substrate temperature. Both the radiation heater and the foil heater can provide several zones for varying the heat applied across the substrate, and a single fluid temperature is provided to the heat exchanger for both baking and chilling cycles.

Abstract: Cooking speed and efficiency are increased in radiant ovens by reducing the intensity of energy emitted by the oven's radiant energy source that does not deeply penetrate food. Undesired photochemical reactions in the cooked food are also reduced or eliminated. In one embodiment, the radiant energy source includes at least one lamp having a coating that reflects at least some of the radiant energy that does not deeply penetrate food. In another embodiment, a plate that reflects or absorbs at least some of the radiant energy that does not deeply penetrate food is disposed between the radiant energy source and a location within the oven where food to be cooked is placed.

Abstract: A method of conveying moieties through an infrared conveyor furnace with controllable point source radiation elements incorporating a clean room internal environment. The method comprises the steps of transporting moieties in an indexed manner through multiple heating zones heated by arrays of lamps; and dividing the lamps of each array into a plurality of groups which are separately controlled to maintain a constant temperature across the surface of the moiety. The method further comprises controlling the lamp groups through the use of a controller utilizing data from FTIR sensors mounted in a fused quartz barrier which is permeable by infrared radiation but which seals the lamp arrays from the heating zones.

Abstract: A rapid thermal heating apparatus including an infrared camera located outside an evacuable chamber to sense infrared radiation emitted from different regions of a substrate.

Abstract: A lightwave oven that includes an oven cavity housing enclosing a cooking chamber therein, and first and second pluralities of elongated high power lamps. The oven cavity housing includes a top wall with a first non-planar reflecting surface facing the cooking chamber, a bottom wall with a second non-planar reflecting surface facing the cooking chamber, and a sidewall with a third reflecting surface that surrounds and faces the cooking chamber. The sidewall has a cross-section that is either circular, elliptical, or polygonal having at least five planar sides. The first plurality of elongated high power lamps provide radiant energy in the visible, near-visible and infrared ranges of the electromagnetic spectrum and are disposed adjacent to and along the top wall. The second plurality of elongated high power lamps provide radiant energy in the visible, near-visible and infrared ranges of the electromagnetic spectrum and are disposed adjacent to and along the bottom wall.

Abstract: A lightwave oven cooking method and apparatus uses pulsed power applied to a plurality of high-power lamps which provides radiant energy in the electromagnetic spectrum and having wavelengths including the visible and near-visible ranges. Irradiation is applied to the food by applying power to the lamps for a specified period of time without vaporizing all of the surface water on the food, and then applying reduced irradiation to the food to complete the cooking cycle without producing an overly browned surface which inhibits deep penetration of radiation in the near-visible and visible ranges. The reduced power can be at a reduced duty cycle which can be done in a sequence of one or more reducing steps in the duty cycle or a continuous reduction of the duty cycle of the power applied to the lamps. A change in color, in water vapor concentration emitted from the surface, in the food temperatures and/or in the generation of steam to a predetermined degree can be sensed to reduce power.

Abstract: A vertical rapid heating furnace for treating semiconductor wafers comprising a hot wall reaction tube positioned within a cylindrical array of circular parallel heating elements substantially concentric therewith, each heating element being spaced from the hot wall reaction tube, each heating element comprising a coil of resistance heating conductor. The coiled resistance heating conductor can be a coil of resistance heating wire, the coil having an outer diameter of from 1 to 7 mm and supported in an annular heating element support. Each heating element support is dimensioned to support and accommodate the thermally expanded heating element supported therein at both the minimum and maximum furnace temperatures. Preferably, each annular heating element support is provided by an annular recess in the insulation surrounding the array of heating elements.

Abstract: A method of assembling a first component for assembly with a second component involves a heating device which includes an enclosure having a cavity for inserting a first component. An array of infrared energy generators is disposed within the enclosure. At least a portion of the first component is inserted into the cavity, exposed to infrared energy and thereby heated to a temperature wherein the portion of the first component is sufficiently softened and/or expanded for assembly with a second component.

Abstract: An lightwave oven and method of cooking therewith for cooking food with radiant energy in the visible, near-visible and infrared ranges of the electromagnetic spectrum from a first plurality of high power lamps positioned above the food and a second plurality of high power lamps positioned below the food. The first plurality of lamps are sequentially operated at a first average power level by applying power thereto in a staggered manner so that not all of the first plurality of lamps are on at the same time, and the second plurality of lamps are sequentially operated at a second average power level by applying power thereto in a staggered manner so that not all of the second plurality of lamps are on at the same time. The stagger can be varied to change the time average power level of the first and/or second pluralities of lamps without adversely affecting the spectral outputs thereof. The first and second pluralities of lamps can be operated in one of several different modes.

Abstract: An improved processing chamber is provided that withstands numerous high pressure/high temperature processing cycles without heater breakage. The processing chamber contains a high conductivity, a high emissivity and/or a high transmissivity shield positioned in sufficient proximity to a heater to prohibit gas currents such as convection current loops from forming between the shield and the heater. The shield is preferably a thin anodized metal or a sapphire sheet.

Abstract: There are disclosed an opening filling apparatus and a method for manufacturing a semiconductor device by using the same. An opening of a semiconductor device is filled by using the filling apparatus comprising: a chamber having a rotation shaft, a motor, a plurality of plates arranged in a circular form centering at the rotation shaft, and a heater; and injectors for injecting gas. When the opening of a semiconductor device such as a trench or a contact hole is filled, filling material may move down by using the centrifugal force generated by rotating the substrate, to thereby fill the opening completely without a void.

Abstract: The present invention provides a method and system for depositing an oxide layer onto a semiconductor device during fabrication by using a deposition chamber, the method comprising the steps of providing a temperature of less than approximately 450 degrees Celsius in the deposition chamber; allowing the semiconductor wafer to soak up the temperature of less than approximately 450 degrees Celsius for approximately 30 seconds; and depositing a layer of oxide onto a semiconductor wafer, wherein a thickness of the oxide layer is not greater than approximately 200 Angstroms.

Abstract: This invention relates to a process of and apparatus for providing at least a partial barrier to moisture vapor transfer through the surface of a material without substantially spoiling the material, a process of and apparatus for removing moisture from a material without substantially spoiling the material, and a process of and apparatus for providing at least a partial barrier to moisture vapor through the surface of a material and for removing moisture from the material without substantially spoiling the material.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. The light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract: An atmosphere controlled workpiece heating chamber includes a spaced apart multiple gas flow means combination which avoids contamination of the atmosphere within the chamber from ambient atmosphere such as air. In one form, the chamber includes a gas diffuser as one flow means, and a heating means, both of which are readily removable, and easily and accurately replaceable.

Abstract: A substrate processing apparatus includes a substrate supporting pedestal having an upper substrate supporting pedestal and a lower substrate supporting pedestal which are vertically stacked, an upper resistance heater provided above the upper substrate supporting pedestal so as to be opposite to the upper substrate supporting pedestal, and a lower resistance heater provided under the lower substrate supporting pedestal so as to be opposite to the lower substrate supporting pedestal. Each of the upper substrate supporting pedestal and the lower substrate supporting pedestal is capable of mounting a substrate or substrates in a substantially horizontal position, and the lower substrate supporting pedestal including an opening which exposes the substrate in its entirety or openings which expose the substrates in their entireties as viewed from under the lower substrate supporting pedestal.

Abstract: A lightwave oven and method of cooking therewith that cooks food contained in cookware having a given reflectivity, and automatically changes the lightwave oven cooking sequence to compensate for the reflectivity of the cookware. The lightwave oven includes an oven cavity housing that encloses a cooking region therein. A first plurality and a second plurality of high power lamps provide radiant energy in the visible, near-visible and infrared ranges of the electromagnetic spectrum. The first plurality of lamps is positioned above the cooking region and the second plurality of lamps is positioned below the cooking region. An optical sensor measures an amount of the radiant energy produced by at least one of the second plurality of lamps that is reflected by the cookware in the cooking region. A controller changes an average power level of the second plurality of lamps based upon the amount of radiant energy measured by the optical sensor.

Abstract: An oven for cooking with light having wavelengths in the visible, near visible, and infra-red spectral ranges uses one or more quartz halogen tungsten lamps or quartz arc bulbs positioned above and below the food item. Uniform cooking of the food item is achieved by positioning the lamps asymmetrically with respect to the midline of the oven and by rotating the food item on a rack during the cooking cycle.

Abstract: A heating assembly for heating semiconductor substrates includes a plurality of heating devices, with each heating device including an energy emitting filament adapted for electrically coupling to an external power supply and housed in a first enclosure. The first enclosure comprises energy transmitting material so that energy generated by the filament will be transmitted through the enclosure. A second enclosure houses the first enclosure, which also comprises energy transmitting material. The second enclosure is coated with a reflective layer and is housed in a third enclosure of transmitting material, which encapsulates the reflective coating so that when the energy emitting filament is energized, the reflective coating is contained in the heating device. A heating assembly includes a frame having a plurality of supports for supporting a plurality of the heating devices.

Abstract: A spinner which distributes a photoresist on a wafer in a semiconductor device fabrication apparatus includes a rotation-plate vacuum chuck which holds a wafer, a driving motor which rotates the chuck and a temperature controller assembly. The temperature controller assembly maintains a temperature distribution along the chuck within a predetermined temperature-distribution range. The temperature controller assembly includes a non-contact thermometer, a non-contact variable heater, and a heat regulator. By controlling the temperature in the chuck, a photoresist layer can be coated on a wafer with more uniform thickness than if the temperature were not controlled.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

Abstract: The "Temperature compensation method for semiconductor wafers in rapid thermal processor using properly designed heat conducting pads as susceptors" is a new temperature compensation concept suitable for rapid thermal processor without uniform temperature distributions. By proper design of heat conducting pads, one can make the semiconductor wafers have uniform temperature distribution in a non-uniform heated rapid thermal processor. This is a very simple and cheap method for solving the temperature non-uniformity problem in the rapid thermal processor.

Abstract: A radiant heater apparatus includes a heating element which generates radiant energy. The heating element has first and second terminals. The apparatus also includes an inner tube configured to surround the heating element. The inner tube includes first and second ends. The inner tube is substantially transmissive to radiant energy. The apparatus further includes an outer tube surrounding the inner tube. The outer tube has an inner surface, an outer surface, and first and second ends. The inner surface of the outer tube is absorptive to radiant energy, and the outer surface of the outer tube is emissive to radiant energy so that radiant energy from the heating element passing through the inner tube is absorbed and re-emitted from by outer tube.

Abstract: The invention relates to a household electric cooking apparatus, of the frying type, without oil bath, intended to cook frozen or fresh food products such as french fries, etc, without unpleasant smell, without smoke and in a dietetic way. It is comprised of a body which contains a metal housing (2). The cooking is performed by short wavelength infrared radiations. Inside said housing, a removable basket (12) made of perforated metal, rotating upon itself, is driven by an electric motor (13). Between the inner housing (2) and the resistors (11), is provided a removable reflector (14) to facilitate the cleaning of the frying unit. The apparatus is light, has reduced dimensions and cooks very rapidly food lproducts without the risks and disavantages related to the manipulation of boiling oil.

Abstract: An apparatus for producing a three-dimensional object by successive solidification of layers of a solidifiable material (7) at places corresponding to the respective cross-section of the object by means of radiation is provided whereby the apparatus comprises a support (4) for supporting the object (6) to be formed, a coating device (12) for applying layers of the solidifiable material (7) onto the support (4) or a previously solidified layer, a solidifying device (14) for solidifying the layers of the material (7) at places corresponding to the respective cross-section of the object and a heating apparatus (8) disposed above the support (4) in operational position for heating the solidifiable material (7), the heating apparatus (8) comprising at least one straight radiant heater (81) with a varying heating power along its length.

Abstract: A method and device for heating silicon carrier bodies in a deposition reactor are by means of radiated heat. In this method, the carrier bodies are irradiated by means of a heat radiation device which emits radiation having a color temperature of at least 2000.degree. C.

Abstract: A gas distribution showerhead for uniformly distributing gas and undistorted radiant heat in an RTP chamber. A gas passageway exists within the showerhead and is suitable for connection to a source of gas. The gas passageway terminates in a plurality of gas ports on a surface of the showerhead. A plurality of energy passageways exist in the showerhead. The energy passageways are exclusive of both the gas passageway and the gas ports, and terminate on the surface of the showerhead. The energy passageways are preferably openings in the showerhead lined with reflectors, although any material which aids in the transmission of the energy may be used. Preferably a plurality of light sources are provided as the energy sources, and they are positioned to transmit light through the energy passageways and out of the surface of the showerhead.

Abstract: A lightwave cooking oven method and apparatus are disclosed wherein a thermistor determines an elevation temperature at a given location on the oven where oven secondary heating has a relation to the cooking time of the food and periodically reducing the power to lamps substantially midway during the normal cooking time at the beginning of which the elevated temperature was determined for a given recipe. The power can be reduced by being turned off or lowered.

Abstract: A rapid thermal processing (RTP) chamber is disclosed, wherein a transparent plate and a body are sealed with a gas tight seal, and wherein the gas tight seal is activated by inflating an inflatable element.