Abstract: The present disclosure relates to a ceramic susceptor, and the ceramic susceptor according to the present disclosure includes: an insulation plate on which an electrode is disposed; a shaft connected to the insulation plate; and a power supply rod connected to the electrode and extending through an inner space of the shaft, wherein the insulation plate includes a first through-passage formed through the upper surface and the lower surface thereof and configured to communicate the inner space of the shaft therewith.

Abstract: According to the technique of the present disclosure, there is provided a substrate processing apparatus including: a reaction tube accommodating therein a plurality of substrates vertically arranged; and a first heater configured to heat an inside of the reaction tube from an upper portion of the reaction tube, wherein a heat generating amount of the first heater in a region corresponding to a low temperature portion of an upper substrate among the plurality of the substrates accommodated in the reaction tube is greater than a heat generating amount of the first heater in a region corresponding to a high temperature portion of the upper substrate.

Abstract: A wafer support table includes a ceramic base having a wafer placement surface and including an RF electrode and a heater electrode embedded, the RF electrode being closer to the wafer placement surface; a hole extending from a surface of the ceramic base opposite the wafer placement surface toward the RF electrode; and an RF rod through having a top end joined to the RF electrode or joined to a conductive member connected to the RF electrode, wherein the RF rod is a hybrid rod including a first rod member that is made of Ni and constitutes a portion of the RF rod from the top end to a predetermined position and a second rod member that is joined to the first rod member and constitutes a portion of the RF rod from the predetermined position to the base end and is made of a non-magnetic material.

Abstract: Systems and methods for identifying a single failure in a heater array and compensating for the failure are described. The methods include identifying two X buses and two Y buses of the heater array having a location of the failure. A confirmation of the single failure within the heater array is performed after identifying the two X and two Y buses. Once the single failure is confirmed, the location of the failure is identified. The methods include compensating for the single failure by adjusting a duty cycle of a heater at the location of the failure, adjusting additional duty cycles of heaters along the same X bus as the failed heater and the same Y bus as the failed heater, and maintaining remaining duty cycles of power provided to remaining heaters of the heater array.

Abstract: A thermocouple guide includes a straight tube portion and a curved tube portion formed in continuation with the straight tube portion to turn an extension direction from the straight tube portion. A cross-section of a tip-side part of the curved tube portion, the tip-side part occupying a predetermined range including a tip end of the curved tube portion, has an external shape that is obtained by linearly cutting both sides of a circle.

Abstract: Heating element for generating IR heat beams for contactlessly heating plastic profile ends, preferably for end-face welding of pipes or fittings clamped in a device, comprising a heating plate made at least partially of a conductive material and having two heatable faces, a heating wire for generating the heat beams, wherein the heating wire is arranged on the faces of the heating plate, wherein the heating plate has a plurality of heating zones spaced apart radially from one another.

Abstract: Embodiments provided herein generally include plasma processing systems configured to preferentially clean desired surfaces of a substrate support assembly by manipulating one or more characteristics of an in-situ plasma and related methods. In one embodiment, a plasma processing method includes generating a plasma in a processing region defined by a chamber lid and a substrate support assembly, exposing an edge ring and a substrate supporting surface to the plasma, and establishing a pulsed voltage (PV) waveform at the edge control electrode.

Abstract: In a chamber, first processing is performed as preliminary processing. After the first processing has been finished, the temperature in a predetermined target region in the chamber is measured with a thermographic camera. Then, whether or not to start second processing on a substrate is determined in accordance with the acquired measured temperature information. If it is determined as a result that the second processing can be started, the second processing is performed. In this case, the second processing on the substrate can be started, with the temperature of the target region in the chamber having reached its stability. Accordingly, the second processing can be performed uniformly on a plurality of substrates. That is, it is possible to reduce variations in processing caused by temperature environments in the chamber.

Abstract: The present invention provides a substrate heat treatment apparatus for heat treating a substrate, including a bake plate, support components, a baffle plate, and a driving device. The bake plate defines at least one gas passage. The support components support the substrate. The baffle plate is fixed on a top surface of the bake plate. The baffle plate surrounds the substrate and a gap is formed between an inner circumferential wall of the baffle plate and the substrate. A driving device drives the plurality of support components to move up or down. When heat treating the substrate, a hot gas is supplied to the space between the substrate and the top surface of the bake plate through the gas passage of the bake plate, and the hot gas flows out through the gap formed between the inner circumferential wall of the baffle plate and the substrate.

Abstract: A three-dimensional (3D) object printer operates a radiation source to direct radiation emitted by the radiation source through a porous substrate at a first intensity insufficient to cure a material contained in the porous substrate and at a second intensity sufficient to cure the material after the emitted radiation has passed through the porous substrate. The material is applied to the porous substrate by one or more wipers.

Abstract: A device having: an article having a flat surface and a lower surface opposed to the flat surface; a cavity formed in the lower surface forming a complete loop surrounding a central portion of the article; a heating element having the same shape as the complete loop in the cavity and positioned to warm a portion of the flat surface adjacent to the heating element when the heating element is activated; a cooling device positioned to cool a portion of the flat surface in the central portion; and a release layer on the flat surface. A device having: an article having an upper surface; a heating element on the upper surface forming a complete loop surrounding a central portion of the article; and an electrically insulating material on the upper surface within the central portion.

Abstract: A holding apparatus including a holding substrate having a first main face on one side in a thickness direction thereof, and a heat generation section which is disposed in the holding substrate and generates heat when energized. The heat generation section includes a plurality of first heating elements arrayed in a planar direction orthogonal to the thickness direction of the holding substrate, and a second heating element disposed on a side toward the first main face in the thickness direction with respect to the plurality of first heating elements. Any one of the plurality of first heating elements is electrically connected to the second heating element in series through a first via extending in the thickness direction within the holding substrate.

Abstract: An electric heater includes a substrate, an outer pattern part disposed on one surface of the substrate, an inner pattern part disposed on the one surface of the substrate so as to be located such that the outer pattern part surrounds the inner pattern part, and to be spaced apart from the outer pattern part. A pair of first electrodes is connected to the outer pattern part and a pair of second electrodes is connected to the inner pattern part and spaced apart from the pair of first electrodes, and the pair of second electrodes are located inside the outer pattern part.

Abstract: A substrate support includes a supporting unit and a light irradiation mechanism. The supporting unit includes a plate member on which an inspection target is placed and a transparent member. The light irradiation mechanism is configured to irradiate light to increase a temperature of the inspection target. Each of the plate member and the transparent member is made of a low thermal expansion material having a linear expansion coefficient of 1.0×10?6/K or less.

Abstract: Methods and systems are provided for calibrating a UV lamp having a plurality of arrays or channels of light emitting diodes. The calibration involves adjusting a drive current applied to the UV lamp based on an actual irradiance output by its light-emitting diodes relative to a target irradiance. The calibration is selectively performed when a stabilized temperature condition of the lamp is met.

Abstract: A wafer support table includes a ceramic base and a rod. The ceramic base has a wafer placement surface and includes an RF electrode and a heater electrode that are embedded therein in the mentioned order from the side closer to the wafer placement surface. A hole is formed in the ceramic base to extend from a rear surface toward the RF electrode. The rod is made of Ni or Kovar, is bonded to a tablet exposed at a bottom surface of the hole, and supplies radio-frequency electric power to the RF electrode therethrough. An Au thin film is coated over a region of an outer peripheral surface of the rod ranging from a base end of the rod to a predetermined position.

Abstract: There is provided a technique capable of easily improving accuracy of temperature measurement of a substrate, regardless of a film formation state of the substrate. There is provided a substrate processing apparatus including a substrate mounting table having a mounting surface on which a substrate is mounted, a heater configured to heat the substrate mounted on the mounting surface, and an elastically deformable temperature sensor whose leading end portion constitutes a temperature detection part. The temperature sensor is configured to extend from below the mounting surface to above the mounting surface, and the leading end portion protrudes from the mounting surface.

Abstract: Electrostatic chucks include multiple electrodes, each having a spiral shape surrounding a center of a surface of the electrostatic chuck, to provide a polyphase electrostatic chuck. Each electrode can be connected to a different phase of power. The spiral shapes can each avoid one another as well as avoiding holes or openings in the surface of the electrostatic chuck. The spiral shapes can be algorithmically determined using a processor. These electrostatic chucks can include three or more electrodes. Methods of manufacture of the electrostatic chucks include determining shapes for each of the electrodes and providing each of the electrodes.

Abstract: The present disclosure provides a support pedestal that includes a support member including a resistive layer having at least two zones, a routing layer, and a plurality of conductive vias. The resistive layer and the routing layer are disposed in different planes of the support member and are connected by the plurality of vias. The number of zones of the resistive layer is greater than or equal to a number of wires coupled to the routing layer. The routing layer may include a plurality of arm portions that extend from a central region of the routing layer. The support pedestal may further include a second resistive layer disposed along the same plane as the routing layer.

Abstract: An apparatus for treating a substrate are provided. The apparatus includes a chamber having a treatment space therein, a substrate support unit to support the substrate in the treatment space, and a heater unit to heat the substrate supported by the substrate support unit. The substrate support unit includes a support plate having a seating surface, a support protrusion provided to protrude from the seating plate and to directly support the substrate, and a sensor provided to the support protrusion to measure a temperature of the substrate.

Abstract: An apparatus and method for reducing moisture within a wafer handling chamber is disclosed. The moisture reduction results in reduced oxidation of a wafer. The moisture reduction is made possible through use of valves and purging gas. Operation of the valves may result in improved localized purging.

Abstract: A plasma processing apparatus includes a process chamber, a substrate chuck disposed in the process chamber, and a temperature controller. The substrate chuck is configured to receive a substrate, and includes a cooling channel through which a coolant flows. The temperature controller is configured to control a temperature of the coolant supplied to the cooling channel. The temperature controller includes a cooler configured to cool the coolant supplied to the cooling channel, a heater configured to heat the coolant supplied to the cooling channel, and a 3-way valve configured to regulate a first flow rate of the coolant passing through the cooler and a second flow rate of the coolant passing through the heater.

Abstract: A method of adjusting a watt density distribution of a resistive heater includes designing a baseline heater circuit. A detection circuit is designed having a constant trace watt density and the detection circuit overlaps the baseline heater circuit. The detection circuit is manufactured, and its baseline thermal map is obtained. The baseline heater circuit is manufactured, and a nominal thermal map is obtained. A subsequent detection circuit is manufactured, and an actual thermal map is obtained. A subtraction thermal image is created by subtracting the baseline thermal map from the actual thermal map, and a subsequent baseline heater circuit is modified according to the subtraction thermal image.

Abstract: A substrate supporting unit is provided. The substrate supporting unit possesses a shaft, a first heater, and a stage. The first heater is located in the shaft and is configured to heat an upper portion of the shaft. The stage is located over the shaft and includes a first plate, a second plate over the first plate, and a second heater between the first plate and the second plate.

Abstract: A device having: an article having a flat surface and a lower surface opposed to the flat surface; a cavity formed in the lower surface forming a complete loop surrounding a central portion of the article; a heating element having the same shape as the complete loop in the cavity and positioned to warm a portion of the flat surface adjacent to the heating element when the heating element is activated; a cooling device positioned to cool a portion of the flat surface in the central portion; and a release layer on the flat surface. A device having: an article having an upper surface; a heating element on the upper surface forming a complete loop surrounding a central portion of the article; and an electrically insulating material on the upper surface within the central portion.

Abstract: The present invention relates to a substrate heating apparatus. More specifically, the present invention relates to a substrate heating apparatus including a first heating element located in an inner region of the substrate heating apparatus, a second heating element located in an outer region, and a third heating element supplying current to the second heating element passing through the inner region, wherein the diameter of a wire constituting the third heating element is thicker than the diameter of a wire constituting the second heating element, thereby inhibiting the generation of an overheating region by the heating of the third heating element.

Abstract: Disclosed herein is an electrostatic chuck (ESC) carrier. The ESC carrier may comprise a carrier substrate having a first surface and a second surface opposite the first surface. A first through substrate opening and a second through substrate opening may pass through the carrier substrate from the first surface to the second surface. A first conductor is in the first through substrate opening, and a second conductor is in the second through substrate opening. The ESC carrier may further comprise a first electrode over the first surface of the carrier substrate and electrically coupled to the first conductor, and a second electrode over the first surface of the carrier substrate and electrically coupled to the second conductor. An oxide layer may be formed over the first electrode and the second electrode.

Abstract: A thermal treatment apparatus including a hot plate which heats a substrate mounted thereon, in a treatment chamber including a lid body covering a surface to be treated of the substrate mounted on the hot plate, the thermal treatment apparatus includes: a control unit which controls at least a temperature of the hot plate, and a temperature measuring unit which measures a temperature of the lid body, wherein the control unit is configured to perform, when a set temperature of the hot plate is changed, correction of a heating amount by the hot plate for obtaining the set temperature after change, based on the temperature of the lid body measured by the temperature measuring unit.

Abstract: A heater system may include a ceramic heater and a drive device. The ceramic heater may include a ceramic substrate and a resistance heating element. The ceramic substrate may include an upper surface. The resistance heating element may extend in an internal portion or on a surface of the ceramic substrate along the upper surface of the ceramic substrate. The drive device may include a main driving part, which supplies the main power to the entirety of the resistance heating element, and an additional driving part, which supplies additional power to a divided region that is a portion of the resistance heating element, by superimposing it on the main power.

Abstract: An electrostatic chuck includes a base having a support surface configured to retain a retaining target by electrostatic retention, and a thermocouple configured to detect a temperature of the base. The thermocouple includes first and second metal parts provided inside the base and having ends connected to each other to form a measuring junction, a first wire part having one end connected to the other end of the first metal part inside the base, and another end extending outside the base, and a second wire part having one end connected to the other end of the second metal part inside the base, and another end extending outside the base. The first metal part and the first wire part are formed from a first material, and the second metal part and the second wire part are formed from a second material different from the first material.

Abstract: An electrode embedded member includes a plate-shaped substrate made of a ceramic; an inner electrode embedded in the substrate; a terminal disposed at a position that overlaps the inner electrode in a thickness direction of the substrate and is farther than the inner electrode from the front surface of the substrate; an intermediate insulator embedded in the substrate between the inner electrode and the terminal and that is made of a ceramic; and a connection electrode disposed along an outer surface of the intermediate insulator and that connects the terminal and the inner electrode. When seen in the thickness direction of the substrate, a cutout portion is formed in the connection electrode located at least outside an overlapping region where the terminal and the connection electrode overlap. The substrate and/or the intermediate insulator penetrates the cutout portion, and thereby the substrate and the intermediate insulator are integrated with each other.

Abstract: An EWOD device for processing multiple droplets through multiple temperature zones. The device is configured to achieve a high spatial density of temperature zones with a wide temperature difference between hot and cold zones. A first set of temperature control elements is arranged above (or below) a fluid gap in an EWOD device and a second set of temperature control elements is arranged below (or above) the fluid gap. A temperature control element of one set is offset from temperature control elements of the other set in the plane of the fluid gap. The temperature control element of one set may be located at a different separation from the fluid gap to the temperature control element of the other set. The device has an optional temperature control element and/or arrangement which offsets the low temperature point from the inlet temperature. The two sets of temperature control elements are substantially interacting, in the sense that they cannot be considered to be thermally isolated from one another.

Abstract: A ceramic heater includes a plate-shaped base with an upper surface and a lower surface, a tubular shaft with an upper end surface connected to the lower surface of the base and a lower end surface, resistive heating elements embedded in the base, a first hole extending in the base along the upper surface of the base, and a second hole extending from the lower end surface or an inner surface of the shaft toward the upper end surface. A third hole connecting the first hole and the second hole to each other is formed continuously between the base and the shaft, and a depth of the third hole from an imaginary plane that passes through a boundary between the second hole and the third hole and that is along the upper surface of the base gradually increases in the direction to the outer edge.

Abstract: A bond chuck having individually-controllable regions, and associated systems and methods are disclosed herein. The bond chuck comprises a plurality of individual regions configured to be individually heated independent of one another. In some embodiments, the individual regions include a first region configured to be heated to a first temperature, and a second region peripheral to the first region and configured to be heated to a second temperature different than the first temperature. In some embodiments, the bond chuck further comprises (a) a first coil disposed within the first region and configured to heat the first region to the first temperature, and (b) a second coil disposed within the second region and configured to heat the second region to the second temperature.

Abstract: The present disclosure relates to apparatus and methods that manipulate the amplitude and phase of the voltage or current of an edge ring. The apparatus includes an electrostatic chuck having a chucking electrode embedded therein for chucking a substrate to the electrostatic chuck. The apparatus further includes a baseplate underneath the substrate to feed RF power to the substrate. The apparatus further includes an edge ring disposed over the electrostatic chuck. The apparatus further includes an edge ring electrode located underneath the edge ring. The apparatus further includes a radio frequency (RF) circuit including a first variable capacitor coupled to the edge ring electrode.

Abstract: A plasma processing apparatus according to an embodiment includes a processing container, a mounting table, a plurality of heaters, and a power supply device. The mounting table is provided in the processing container. The plurality of heaters are provided in the mounting table. The power supply device supplies electric power to the plurality of heaters. The power supply device includes a plurality of transformers and a plurality of zero-cross control type solid state relays (SSRs). The plurality of transformers are configured to step down a voltage from an alternating-current power source. Each of the plurality of transformers includes a primary coil and a secondary coil. The primary coil is connected to the alternating-current power source. Each of the plurality of SSRs is provided between one corresponding heater among the plurality of heaters and the secondary coil of one corresponding transformer among the plurality of transformers.

Abstract: Embodiments of the inventive concept relate to an apparatus and a method for removing a liquid residing on a substrate. The substrate treating apparatus includes a substrate support unit configured to support the substrate, a liquid supply unit configured to supply a liquid onto the substrate supported by the substrate support unit, and a heating unit configured to heat the substrate supported by the substrate support unit, wherein the substrate support unit includes a support plate having a seating surface, on which the substrate is seated, and having a suction hole on the seating surface, a rotary shaft configured to rotate the support plate, and a vacuum member configured to reduce a pressure of the suction hole such that the substrate seated on the seating surface is vacuum-suctioned on the support plate. Accordingly, the drying efficiency of the substrate may be increased.

Abstract: A substrate support for a substrate processing system includes a plurality of heating zones, a baseplate, a heating layer arranged on the baseplate, a ceramic layer arranged on the heating layer, and wiring provided through the baseplate, the heating layer, and into the ceramic layer in a first zone of the plurality of heating zones. An electrical connection is routed from the wiring in the first zone, across the ceramic layer to a second zone of the plurality of heating zones, and to a heating element in the heating layer in the second zone.

Abstract: A method of forming a heater assembly for use in semiconductor processing includes thermally securing a heater substrate to an application substrate; and applying a layered heater having at least one functional layer to the heater substrate after the heater substrate is secured to the application substrate. The heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the functional layer. The material of the functional layer is not capable of withstanding the elevated temperature of the thermal securing step.

Abstract: A laminated top plate of a workpiece carrier is described that is particularly suitable for mechanical and semiconductor processing. In one example, A method of fabricating a workpiece carrier top plate includes dispensing conductive paste onto at least one of a plurality of ceramic sheets, embedding the paste between the plurality of ceramic sheets, compacting ceramic sheets together with the paste, and sintering the paste.

Abstract: A heating device includes a holding member and having thereinside a plurality of resistive heating elements connected to different pairs of electrode terminals, and a columnar support joined to the second surface of the holding member. The plurality of resistive heating elements include a first resistive heating element and a second resistive heating element. The first resistive heating element is disposed throughout a first region including a region that overlaps the columnar support member as viewed from the first direction and a second region that is located around the outer periphery of the first region and that does not overlap the columnar support member as viewed from the first direction. The second resistive heating element is disposed at a position closer to the first surface than the first resistive heating element in the first direction and is disposed in only the first region.

Abstract: Described herein is a method of detecting fault conditions in a multiplexed multi-heater-zone heating plate for a substrate support assembly used to support a semiconductor substrate in a semiconductor processing apparatus.

Abstract: A substrate fixing device includes a baseplate, an electrostatic chuck, and an insulating layer interposed between the baseplate and the electrostatic chuck. The insulating layer includes a heating element formed of a first material and a wiring line connected in series to the heating element. The wiring line includes a first conductive layer formed of the first material and a second conductive layer joined onto the first conductive layer. The second conductive layer is formed of a second material having a resistivity lower than the resistivity of the first material.

Abstract: As viewed in plane, a ceramic heater includes zone heat-generating elements disposed in respective heating zones so as to heat a ceramic substrate independently. In the heating zone having a hole region, the zone heat-generating element is formed of a linear heat-generating conductor which has parallel segments disposed in parallel, and a turning-back segment which connects, while turning back, the parallel segment of the heat-generating conductor extending toward the hole region to the adjacent parallel segment of the heat-generating conductor so as to prevent the parallel segment extending toward the hole region from overlying the hole region.

Abstract: A heater includes: a base body formed of ceramics; a heat generating resistor layer disposed on a surface of the base body; a conductive layer laminated on the heat generating resistor layer; a plate-like member which is disposed on the conductive layer and is provided with a pair of through holes; and a connection terminal composed of wires which are inserted successively through one of the pair of through holes and the other and are unified at a side of the plate-like member which side is opposite to a side of the plate-like member facing the conductive layer, the connection terminal being electrically connected with the conductive layer.

Abstract: A sample holder includes a substrate composed of ceramics, having a sample holding surface on one main surface thereof; and a heat-generating resistor provided on an other main surface of the substrate, containing a glass component. The substrate contains the glass component in a vicinity region of the heat-generating resistor.

Abstract: A heater assembly for use in semiconductor processing that includes an application substrate; a heater substrate secured to the application substrate by a thermal bonding process; and a functional layer disposed onto the heater substrate by a layered process. In this heater assembly, the heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the functional layer.

Abstract: A powder composition adapted for use in suspension thermal spray coating processes. The powder includes agglomerated and/or non-agglomerated particles having at least one dispersing agent deposited thereon. The composition results in a homogeneous, stable suspension when combined with a liquid carrier for use in suspension thermal spray coating processes.

Abstract: There is provided a substrate processing apparatus, comprising: a substrate placing table which is provided to at least one of the temperature elevating part and the temperature lowering part formed in a container, and which causes heat-transfer to occur with the substrate placed on a placing surface; and a temperature control part which controls a temperature of the substrate placing table, wherein the temperature control part is configured to: control the temperature of the substrate placing table so that the temperature of the substrate to be loaded into the processing part is elevated to a predetermined temperature, before the substrate is placed on the substrate placing table, when the substrate placing table is provided to the temperature elevating part; and control the temperature of the substrate placing table so that the temperature of the processed substrate unloaded from the processing part is lowered to a predetermined temperature, before the substrate is placed on the substrate placing table, whe

Abstract: Embodiments provide a plasma processing apparatus, substrate support assembly, and method of controlling a plasma process. The apparatus and substrate support assembly include a substrate support pedestal, a tuning assembly that includes a tuning electrode that is disposed in the pedestal and electrically coupled to a radio frequency (RF) tuner, and a heating assembly that includes one or more heating elements disposed within the pedestal for controlling a temperature profile of the substrate, where at least one of the heating elements is electrically coupled to an RF filter circuit that includes a first inductor configured in parallel with a formed capacitance of the first inductor to ground. The high impedance of the RF filters can be achieved by tuning the resonance of the RF filter circuit, which results in less RF leakage and better substrate processing results.