Abstract: An electrode embedded member includes a plate-shaped substrate made of a ceramic; an inner electrode embedded in the substrate; a terminal disposed at a position that overlaps the inner electrode in a thickness direction of the substrate and is farther than the inner electrode from the front surface of the substrate; an intermediate insulator embedded in the substrate between the inner electrode and the terminal and that is made of a ceramic; and a connection electrode disposed along an outer surface of the intermediate insulator and that connects the terminal and the inner electrode. When seen in the thickness direction of the substrate, a cutout portion is formed in the connection electrode located at least outside an overlapping region where the terminal and the connection electrode overlap. The substrate and/or the intermediate insulator penetrates the cutout portion, and thereby the substrate and the intermediate insulator are integrated with each other.

Abstract: A ceramic heater includes a plate-shaped base with an upper surface and a lower surface, a tubular shaft with an upper end surface connected to the lower surface of the base and a lower end surface, resistive heating elements embedded in the base, a first hole extending in the base along the upper surface of the base, and a second hole extending from the lower end surface or an inner surface of the shaft toward the upper end surface. A third hole connecting the first hole and the second hole to each other is formed continuously between the base and the shaft, and a depth of the third hole from an imaginary plane that passes through a boundary between the second hole and the third hole and that is along the upper surface of the base gradually increases in the direction to the outer edge.

Abstract: An EWOD device for processing multiple droplets through multiple temperature zones. The device is configured to achieve a high spatial density of temperature zones with a wide temperature difference between hot and cold zones. A first set of temperature control elements is arranged above (or below) a fluid gap in an EWOD device and a second set of temperature control elements is arranged below (or above) the fluid gap. A temperature control element of one set is offset from temperature control elements of the other set in the plane of the fluid gap. The temperature control element of one set may be located at a different separation from the fluid gap to the temperature control element of the other set. The device has an optional temperature control element and/or arrangement which offsets the low temperature point from the inlet temperature. The two sets of temperature control elements are substantially interacting, in the sense that they cannot be considered to be thermally isolated from one another.

Abstract: A bond chuck having individually-controllable regions, and associated systems and methods are disclosed herein. The bond chuck comprises a plurality of individual regions configured to be individually heated independent of one another. In some embodiments, the individual regions include a first region configured to be heated to a first temperature, and a second region peripheral to the first region and configured to be heated to a second temperature different than the first temperature. In some embodiments, the bond chuck further comprises (a) a first coil disposed within the first region and configured to heat the first region to the first temperature, and (b) a second coil disposed within the second region and configured to heat the second region to the second temperature.

Abstract: The present disclosure relates to apparatus and methods that manipulate the amplitude and phase of the voltage or current of an edge ring. The apparatus includes an electrostatic chuck having a chucking electrode embedded therein for chucking a substrate to the electrostatic chuck. The apparatus further includes a baseplate underneath the substrate to feed RF power to the substrate. The apparatus further includes an edge ring disposed over the electrostatic chuck. The apparatus further includes an edge ring electrode located underneath the edge ring. The apparatus further includes a radio frequency (RF) circuit including a first variable capacitor coupled to the edge ring electrode.

Abstract: A plasma processing apparatus according to an embodiment includes a processing container, a mounting table, a plurality of heaters, and a power supply device. The mounting table is provided in the processing container. The plurality of heaters are provided in the mounting table. The power supply device supplies electric power to the plurality of heaters. The power supply device includes a plurality of transformers and a plurality of zero-cross control type solid state relays (SSRs). The plurality of transformers are configured to step down a voltage from an alternating-current power source. Each of the plurality of transformers includes a primary coil and a secondary coil. The primary coil is connected to the alternating-current power source. Each of the plurality of SSRs is provided between one corresponding heater among the plurality of heaters and the secondary coil of one corresponding transformer among the plurality of transformers.

Abstract: Embodiments of the inventive concept relate to an apparatus and a method for removing a liquid residing on a substrate. The substrate treating apparatus includes a substrate support unit configured to support the substrate, a liquid supply unit configured to supply a liquid onto the substrate supported by the substrate support unit, and a heating unit configured to heat the substrate supported by the substrate support unit, wherein the substrate support unit includes a support plate having a seating surface, on which the substrate is seated, and having a suction hole on the seating surface, a rotary shaft configured to rotate the support plate, and a vacuum member configured to reduce a pressure of the suction hole such that the substrate seated on the seating surface is vacuum-suctioned on the support plate. Accordingly, the drying efficiency of the substrate may be increased.

Abstract: A substrate support for a substrate processing system includes a plurality of heating zones, a baseplate, a heating layer arranged on the baseplate, a ceramic layer arranged on the heating layer, and wiring provided through the baseplate, the heating layer, and into the ceramic layer in a first zone of the plurality of heating zones. An electrical connection is routed from the wiring in the first zone, across the ceramic layer to a second zone of the plurality of heating zones, and to a heating element in the heating layer in the second zone.

Abstract: A method of forming a heater assembly for use in semiconductor processing includes thermally securing a heater substrate to an application substrate; and applying a layered heater having at least one functional layer to the heater substrate after the heater substrate is secured to the application substrate. The heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the functional layer. The material of the functional layer is not capable of withstanding the elevated temperature of the thermal securing step.

Abstract: A laminated top plate of a workpiece carrier is described that is particularly suitable for mechanical and semiconductor processing. In one example, A method of fabricating a workpiece carrier top plate includes dispensing conductive paste onto at least one of a plurality of ceramic sheets, embedding the paste between the plurality of ceramic sheets, compacting ceramic sheets together with the paste, and sintering the paste.

Abstract: A heating device includes a holding member and having thereinside a plurality of resistive heating elements connected to different pairs of electrode terminals, and a columnar support joined to the second surface of the holding member. The plurality of resistive heating elements include a first resistive heating element and a second resistive heating element. The first resistive heating element is disposed throughout a first region including a region that overlaps the columnar support member as viewed from the first direction and a second region that is located around the outer periphery of the first region and that does not overlap the columnar support member as viewed from the first direction. The second resistive heating element is disposed at a position closer to the first surface than the first resistive heating element in the first direction and is disposed in only the first region.

Abstract: Described herein is a method of detecting fault conditions in a multiplexed multi-heater-zone heating plate for a substrate support assembly used to support a semiconductor substrate in a semiconductor processing apparatus.

Abstract: A substrate fixing device includes a baseplate, an electrostatic chuck, and an insulating layer interposed between the baseplate and the electrostatic chuck. The insulating layer includes a heating element formed of a first material and a wiring line connected in series to the heating element. The wiring line includes a first conductive layer formed of the first material and a second conductive layer joined onto the first conductive layer. The second conductive layer is formed of a second material having a resistivity lower than the resistivity of the first material.

Abstract: As viewed in plane, a ceramic heater includes zone heat-generating elements disposed in respective heating zones so as to heat a ceramic substrate independently. In the heating zone having a hole region, the zone heat-generating element is formed of a linear heat-generating conductor which has parallel segments disposed in parallel, and a turning-back segment which connects, while turning back, the parallel segment of the heat-generating conductor extending toward the hole region to the adjacent parallel segment of the heat-generating conductor so as to prevent the parallel segment extending toward the hole region from overlying the hole region.

Abstract: A heater includes: a base body formed of ceramics; a heat generating resistor layer disposed on a surface of the base body; a conductive layer laminated on the heat generating resistor layer; a plate-like member which is disposed on the conductive layer and is provided with a pair of through holes; and a connection terminal composed of wires which are inserted successively through one of the pair of through holes and the other and are unified at a side of the plate-like member which side is opposite to a side of the plate-like member facing the conductive layer, the connection terminal being electrically connected with the conductive layer.

Abstract: A sample holder includes a substrate composed of ceramics, having a sample holding surface on one main surface thereof; and a heat-generating resistor provided on an other main surface of the substrate, containing a glass component. The substrate contains the glass component in a vicinity region of the heat-generating resistor.

Abstract: A heater assembly for use in semiconductor processing that includes an application substrate; a heater substrate secured to the application substrate by a thermal bonding process; and a functional layer disposed onto the heater substrate by a layered process. In this heater assembly, the heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the functional layer.

Abstract: A powder composition adapted for use in suspension thermal spray coating processes. The powder includes agglomerated and/or non-agglomerated particles having at least one dispersing agent deposited thereon. The composition results in a homogeneous, stable suspension when combined with a liquid carrier for use in suspension thermal spray coating processes.

Abstract: There is provided a substrate processing apparatus, comprising: a substrate placing table which is provided to at least one of the temperature elevating part and the temperature lowering part formed in a container, and which causes heat-transfer to occur with the substrate placed on a placing surface; and a temperature control part which controls a temperature of the substrate placing table, wherein the temperature control part is configured to: control the temperature of the substrate placing table so that the temperature of the substrate to be loaded into the processing part is elevated to a predetermined temperature, before the substrate is placed on the substrate placing table, when the substrate placing table is provided to the temperature elevating part; and control the temperature of the substrate placing table so that the temperature of the processed substrate unloaded from the processing part is lowered to a predetermined temperature, before the substrate is placed on the substrate placing table, whe

Abstract: Embodiments provide a plasma processing apparatus, substrate support assembly, and method of controlling a plasma process. The apparatus and substrate support assembly include a substrate support pedestal, a tuning assembly that includes a tuning electrode that is disposed in the pedestal and electrically coupled to a radio frequency (RF) tuner, and a heating assembly that includes one or more heating elements disposed within the pedestal for controlling a temperature profile of the substrate, where at least one of the heating elements is electrically coupled to an RF filter circuit that includes a first inductor configured in parallel with a formed capacitance of the first inductor to ground. The high impedance of the RF filters can be achieved by tuning the resonance of the RF filter circuit, which results in less RF leakage and better substrate processing results.

Abstract: A sample holder includes a substrate which is formed of a ceramic containing aluminum nitride as a primary component and which has an outer surface functioning as a sample holding surface and an electrical conductor which is provided in the substrate and which faces the sample holding surface. In this sample holder, at the sample holding surface side in the substrate than the electrical conductor, the oxygen content of the ceramic is small in a region located inside the periphery of the electrical conductor as compared to that in a region located outside the periphery thereof.

Abstract: Provided are substrate processing apparatuses including a temperature measurement unit. The substrate processing apparatus comprises a chamber including a substrate processing region, a dielectric sheet that is disposed on the substrate processing region and includes an insertion hole and a temperature measurement unit that is disposed on the dielectric sheet to measure the temperature of the dielectric sheet, and has a screw portion inserted into the insertion hole, wherein each of the insertion hole and the screw portion has thread helixes meshed with each other.

Abstract: A substrate heat treatment apparatus includes: a placement unit on which a substrate is placed; a heat treatment unit for heating or cooling the substrate on the placement unit; a plurality of temperature sensors positioned correspondingly to a plurality of locations of the substrate on the placement unit; and a control unit. The control unit is configured to control the heat treatment unit based on temperatures detected by the temperature sensors, to calculate a position of a thermal center of gravity of the substrate based on the temperatures detected by the temperature sensors, and to detect heat treatment condition of the substrate based on the position of the thermal center of gravity.

Abstract: A method and corresponding device for bonding a first contact surface of a first substrate to a second contact surface of a second substrate. The method includes the steps of arranging a substrate stack, formed from the first substrate and the second substrate and aligned on the contact surfaces, between a first heating surface of a first heating system and a second heating surface of a second heating system.

Abstract: A ceramic body is heated to a predetermined temperature by using a furnace, and a cooling gas is ejected toward a first end face of the ceramic body so that the first end face of the ceramic body is cooled. At this time, the temperature of the first end face of the ceramic body is measured by a radiation thermometer provided on the same side from which the cooling gas is ejected, and the internal temperature is measured by a thermocouple provided in the ceramic body. Thereafter, a thermal shock resistance test in which actual use conditions are simulated is performed by obtaining the temperature gradient of the ceramic body from measurement results of the temperature of the first end face of the ceramic body and the internal temperature and checking the absence or presence of cracks that occurs to the ceramic body.

Abstract: A device is for supporting within a coating chamber a mechanical seal face (8) having an annular sealing surface. The device includes a frame (1) housing first support means (9) for supporting the seal face when the device is in a first orientation with the annular sealing surface resting on a surface of said first support means. Second support means (2) within the frame supports the seal face when the device is in a second orientation.

Abstract: A method for manufacturing a semiconductor device includes a step of preparing a SiC substrate, a step of fixing the SiC substrate on an electrostatic chuck and heat-treating the SiC substrate, and a step of performing ion implantation treatment on the SiC substrate fixed on the electrostatic chuck and heat-treated. The step of heat-treating includes an outer circumferential-side chucking step which generates an electrostatic attraction force between an outer circumferential region of the SiC substrate and an outer circumferential portion of the electrostatic chuck, the outer circumferential portion facing the outer circumferential region, and an inner circumferential-side chucking step which is started after the outer circumferential-side chucking step is started, and generates an electrostatic attraction force between an inner circumferential region of the SiC substrate and an inner circumferential portion of the electrostatic chuck, the inner circumferential portion facing the inner circumferential region.

Abstract: A workpiece holder includes a puck, first and second heating devices in thermal communication with respective inner and outer portions of the puck, and a thermal sink in thermal communication with the puck. The first and second heating devices are independently controllable, and the first and second heating devices are in greater thermal communication with the puck, than thermal communication of the thermal sink with the puck. A method of controlling temperature distribution of a workpiece includes flowing a heat exchange fluid through a thermal sink to establish a reference temperature to a puck, raising temperatures of radially inner and outer portions of the puck to first and second temperatures greater than the reference temperature, by activating respective first and second heating devices disposed in thermal communication with the radially inner and outer portions of the puck, and placing the workpiece on the puck.

Abstract: Provided is a supporting unit. The supporting unit includes: a supporting plate including a substrate on a top surface thereof; and a heater having a predetermined pattern at a bottom surface of the supporting plate and heating the supporting plate, wherein the heater includes: a first metal plating layer applied on the bottom surface of the supporting plate along the predetermined pattern; an anti-oxidation layer of a conductive material applied on the first metal plating layer along the predetermined pattern; and a second metal plating layer of a conductive material applied on the anti-oxidation layer in a portion of the pattern.

Abstract: A detection device for detecting something existed in the high temperature cavity, for detecting the glass substrate sending into or outing of the high temperature cavity, wherein, the detection device comprises a deflection probe and a detection element, the deflection probe comprises a fixed probe and the deflection probe in the same line, which is assembled at the side wall of the high temperature cavity, when the glass substrate is sending into the high temperature cavity and touching the deflection probe, the deflection probe will be connected with the detection element, the detection element will send out a electrical sensor signal for showing the glass substrate is push into the cavity. Therefore, it can be determined in time that the glass substrate and the other elements are still existed in the high temperature cavity or not with some simple machines or detection elements, the detecting process is timely and accurately.

Abstract: Embodiments described herein generally relate to methods for processing a dielectric film on a substrate with UV energy. In one embodiment, a precursor film is deposited on the substrate, and the precursor film includes a plurality of porogen molecules. The precursor film is first exposed to UV energy at a first temperature to initiate a cross-linking process. After a first predetermined time, the temperature of the precursor film is increased to a second temperature for a second predetermined time to remove porogen molecules and to continue the cross-linking process. The resulting film is a porous low-k dielectric film having improved elastic modulus and hardness.

Abstract: The present disclosure provides an insulation machine platform, a substrate-contact type apparatus, and a static electricity elimination method. The insulation machine platform includes: a machine platform body including at least one vent hole, and at least one static electricity elimination device; the at least one vent hole corresponds to the at least one static electricity elimination device being located at a position corresponding to the at least one vent hole, respectively, wherein the machine platform body has a supporting surface, underneath which the static electricity elimination device is located, for receiving a substrate. The substrate-contact type apparatus includes the insulation machine platform.

Abstract: A fluorescence light emitting element includes a phosphor layer that includes phosphors and a binder made of an inorganic material. A thermal conductivity B of the binder is larger than 1.88 times a thermal conductivity A of the phosphors. When the volume of the phosphors included in the phosphor layer is X and the volume of the binder included in the phosphor layer is Y, a relationship of X/Y>1/2 is satisfied.

Abstract: An electrostatic chuck device is provided in which there is no concern that a plate-shaped sample may be deformed when adsorbing the plate-shaped sample or when detaching the plate-shaped sample, the temperature of the plate-shaped sample is uniformized, and particles are not easily produced.

Abstract: An exemplary method for manufacturing a heating plate for a substrate support assembly includes forming holes in at least one sheet, printing a slurry of conductor powder, or pressing a precut metal foil, or spraying a slurry of conductor powder, on the at least one sheet to form the planar heater zones, the power supply lines, and power return lines. The holes in the at least one sheet are filled with a slurry of conductor powder to form power supply and power return vias. The sheets are then aligned, pressed, and bonded to form the heating plate.

Abstract: An imprint lithography apparatus and manufacturing method can lead to mechanical stress being formed in a substrate to which an imprint pattern is being applied. This may cause strain within the substrate leading to misalignment of a subsequent pattern with an earlier pattern in a part of the substrate, which is strained. An apparatus and method is disclosed which allows for stress relaxation in the substrate prior to further patterning to reduce, minimize or prevent such misalignment from residual strain. This is achieved by locally unclamping a portion of substrate (including optionally the entire substrate) from a corresponding portion of substrate holder so that mechanical stress leading to local strain may relax prior to further patterning. To overcome residual frictional force between the substrate and substrate holder, the substrate and substrate holder may be physically separated prior to further patterning.

Abstract: A heated platen with improved temperature uniformity is generally described. Various examples provide a platen portion with a metallization layer thermally coupled thereto. An electrical contact may be connected to the metallization layer and configured to conduct an electric current for heating the metallization layer and the platen portion. The electrical contact may include an electrical conductor and a resistive heating element that is configured to heat up when electric current flows therethrough, thereby creating a thermal block that reduces an amount of heat that is absorbed into the electrical contact from the platen portion.

Abstract: To provide an electrostatic chuck, including: a ceramic dielectric substrate having a first major surface on which an object to be processed is mounted, and a second major surface on a side opposite the first major surface, the ceramic dielectric substrate being a polycrystalline ceramic sintered body; and an electrode layer interposed between the first major surface and the second major surface of the ceramic dielectric substrate, the electrode layer being integrally sintered with the ceramic dielectric substrate, the ceramic dielectric substrate including a first dielectric layer between the electrode layer and the first major surface, and a second dielectric layer between the electrode layer and the second major surface, and at least the first dielectric layer of the ceramic dielectric substrate having an infrared spectral transmittance in terms of a thickness of 1 millimeter (mm) of not less than 20%.

Abstract: An anneal module for annealing semiconductor material wafers and similar substrates reduces particle contamination and oxygen ingress while providing uniform heating including for 500° C. processes. The anneal module may include a process chamber formed in a metal body having internal cooling lines. A hot plate has a pedestal supported on a thermal choke on the body. A gas distributor in the lid over the hot plate flows gas uniformly over the wafer. A transfer mechanism moves a hoop to shift the wafer between the hot plate and a cold plate.

Abstract: A method of forming a heater assembly for use in semiconductor processing includes thermally securing a heater substrate to an application substrate; and applying a layered heater to the heater substrate after the heater substrate is secured to the application substrate. The application of the layered heater includes applying a first dielectric layer onto the heater substrate, applying a resistive heating layer onto the first dielectric layer, and applying a second dielectric layer onto the resistive heating layer. The heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of at least one of the first dielectric layer and a coefficient of thermal expansion of the resistive heating layer.

Abstract: In one embodiment, a substrate processing apparatus includes a chamber having an interior volume with an upper portion and a lower portion, a cooling source disposed in the upper portion of the interior volume, a heating source opposing the cooling source, a magnetically movable substrate support that moves between the upper portion and the lower the portion, and a plurality of sensors coupled to the chamber to detect the position of the substrate support relative to the heating source and the cooling source.

Abstract: A heating device 10 includes a ceramic base 20, a resistance heating element 22, and a hollow shaft 40. The ceramic base 20 includes a central portion 20a and a peripheral portion 20b. The resistance heating element 22 is designed in such a manner that the density of heating in the central portion 20a is 1.4 to 2.0 times that in the peripheral portion 20b. The hollow shaft 40 includes a first section 41 and a second section 42. The thickness tb1 of the first section 41 is 6 to 10 mm. The thickness tb2 of the second section 42 is 0.3 to 0.5 times the thickness tb1 of the first section 41. The length of the first section 41 is 0.4 to 0/8 times the overall length of the hollow shaft 40.

Abstract: Methods and substrate processing systems are provided for controlling substrate heating efficiency and generating a desired temperature profile on the surface of a substrate when the substrate is disposed on a substrate support surface of a substrate support assembly. The substrate support assembly is provided with minimum software control and hardware requirement and includes a heating element comprised of multiple heating elements sections. The heating element is connected to a power source for adjusting the temperature outputs of the multiple heating element sections and providing adjustable multi-heating zones and desired temperature distribution over the substrate support surface of the substrate support assembly within a process chamber.

Abstract: A method and apparatus for controlling the temperature of a substrate support assembly includes a pedestal, a chuck connected to the pedestal, a cooling plate structure thermally coupled with the chuck, a heater thermally coupled with the cooling plate structure, and a controller configured to control the cooling plate structure while controlling the heater during processing of a substrate on the chuck. The method includes cooling a substrate support with a cooling plate structure while heating the cooling plate structure with a heater thermally coupled with the cooling plate structure, monitoring the performance of the cooling plate structure and the heater, and regulating the performance of the cooling plate structure and the heater to maintain the substrate support at a desired temperature.

Abstract: A substrate heating pedestal for a process chamber for processing substrates is described. The pedestal comprises an annular plate comprising a surface having an array of recesses. A plurality of ceramic balls are each positioned in a recess on the surface of the annular plate to define a substrate receiving surface. A heating element is embedded in the annular plate.

Abstract: Embodiments of the present disclosure relate to an apparatus for thermally processing a semiconductor substrate. In one embodiment, the apparatus includes a substrate support, a beam source having a fast axis for emitting a beam along an optical path intersecting the substrate support, and a homogenizer disposed along the optical path between the beam source and the substrate support. The homogenizer comprises a first lens array, and a second lens array, wherein lenses of the second lens array have a larger lenslet array spacing than lenses of the first lens array.

Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.

Abstract: A semiconductor substrate processing apparatus (1), comprising a substrate support assembly (30), including a substrate support (32) defining an outer support surface (34) for supporting a substrate or substrate carrier (24) thereon, and a heater (50) comprising a heat dissipating portion (54) that is disposed within the substrate support (32) and that extends underneath and substantially parallel to the support surface (34), said substrate support (32) being rotatably mounted around a rotation axis (L) that extends through said support surface (34), such that the support surface (34) is rotatable relative to the heat dissipating portion (54) of the heater (50).

Abstract: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.

Abstract: An electrostatic chuck is formed using materials that are optically transparent to a range of frequencies, such as infrared radiation. The invention discloses several methods for achieving optical transparency. The chuck electrode can be formed having a mesh pattern designed with a specific open area percentage to provide adequate wafer clamping force while still allowing sufficient levels of infrared radiation to pass through. Alternatively, the chuck electrode can also be made from a transparent conductive film. A workpiece is disposed on one surface of the chuck, and a radiative heat source is positioned on the opposite side of the chuck. A reflector plate may be used to reflect the infrared radiation toward the chuck and the wafer. The spacing of the radiation sources and the shape of the reflector plate may be modified to focus more radiation on a particular portion of the workpiece if desired.