Abstract: The present invention provides for characterization of a film (e.g., thickness determination for a silicon oxynitride film) using a comparison process (e.g., a fitting process) to compare measured peak shapes for elemental and/or chemical species (e.g., Si peak shapes previously measured for a particular process to be monitored) to collected spectral data (e.g., using a non-linear least squares fitting algorithm).

Abstract: A charged particle energy analyzer (FIG. 1) comprises a source of electrons 1 and inner and outer cylinders (2,3) arranged concentrically about a longitudinal axis (z—z). Electrical potential applied to the outer cylinder (3) creates an electrostatic field between the cylinders (2,3) defined by equipotentials which are symmetrical about the longitudinal axis z—z and increase linearly in the longitudinal direction and logarithmically in the radial direction. Electrons having different energies are focused by the electrostatic field at discrete positions spaced apart from each other in the longitudinal direction. Also described is a charged particle energy analyzer (FIG. 6) in which electrons having different energies are fcoused by the electrostatic field at discrete positions at a surface transverse to the longitudinal axis. Both analysers may operate in the second-order focusing mode.

Abstract: A particle-optical apparatus is disclosed which combines the functions of an energy selector 27 and a beam splitter 21. The particle-optical apparatus is used in an electron microscopy system and serves to separate and superimpose, respectively, beam paths of a primary electron beam 11 and a secondary electron beam 13.

Abstract: An electron microscope is provided, which enables an observation with high resolution. The electron microscope is able to detect the deviation of an electron beam relative to the opening of a slit quantitatively, thereby shifting the electron beam accurately to the center of the opening of slit so as to execute energy selection. The electron microscope has an energy filter control unit for adjusting a relative position between an electron beam and a slit by shifting the position of electron beam based on a signal delivered by an energy filter electron beam detector. Also a method for controlling an energy filter is provided, which includes the steps of shifting the position of an electron beam, determining the position of electron beam and letting the electron beam pass through the center of an opening of the slit by controlling the position of slit or position of electron beam.

Abstract: A detector apparatus and its use for cluster ion beam diagnostics are described. The detector has a Faraday cup with a conductance path to a gas pressure detector and a conductance to the detector exit. The detector acquires ion current, which is a measure of the ion beam flux, and also acquires mass flux, through a pressure measurement. The pressure measurement responds to the mass of dissociated gas clusters and is combined with information about instantaneous ion current to estimate mean gas cluster ion size ({overscore (N)}i).

Abstract: A relational database is built and used for the identification of single crystals by electron diffraction. Selected area electron diffraction (SAED) patterns (a lattice net of spots) produced in an electron diffractometer or a transmission electron microscope (TEM) are matched against database patterns calculated from reduced unit cells of known materials. The effects of double diffraction on electron diffraction patterns are fully incorporated into the database by rigorous calculation.

Abstract: A probe-forming electron microscopy system 1 (SEM) is proposed which comprises a position-sensitive detector 15. As a result, position-dependent secondary electron intensities in the object plane 7 or angle-dependent secondary electron intensities in the object plane 7 may be observed.

Abstract: An aberration corrector comprises four stages of electrostatic quadrupole elements, two stages of electrostatic quadrupole elements for superimposing a magnetic potential distribution analogous to the electric potential distribution created by the two central ones of the four stages of the electrostatic quadrupole elements on the electric potential distribution, an objective lens, a manual operation portion permitting a user to modify the accelerating voltage or the working distance, a power supply for supplying voltages to the four stages of electrostatic quadrupole elements, a power supply for exciting the two stages of magnetic quadrupole elements, a power supply for the objective lens, and a control portion for controlling the power supplies according to a manual operation or setting performed on the manual operation portion.

Abstract: A method of examining a sample, including: performing a first spectroscopic analysis of a surface portion of the sample when the sample surface portion is in a first electrical charge state; placing the sample surface portion in a second electrical charge state that is different from the first electrical charge state and performing a second spectroscopic analysis of the surface portion of the sample when the sample surface portion is in the second electrical charge state; and comparing the first spectroscopic analysis result with the second spectroscopic analysis result to obtain at least one of structural and electrical information about the sample.

Abstract: A transmission electron microscope (TEM) equipped with an energy filter, the microscope being characterized in that rotation of the created image or diffraction pattern is prevented. The microscope has 6 lens systems, i.e., an objective lens system, four intermediate lens systems, and a projector lens system. If the mode of operation is varied, the total sum of the products of the numbers of turns of wire on the coils of the lenses of the various lens systems including the objective lens system, the four intermediate lens systems, and the projector lens system, and their respective excitation currents is kept constant.

Abstract: In order to improve the resolution of an electron beam in a scanning electron microscope or the like in which a Wien filter is employed for particle detection purposes, the beam is caused to have an envelope with a crossover point within, and preferably centrally located with respect to, the Wien filter.

Abstract: A charged particle measuring apparatus discriminates the types of charged particles accurately and the energy precisely, measures high-energy charged particles precisely, and detects a failure of the apparatus to continue measurement in a mode corresponding to the failure. Outputs from first and second detectors are used as first and second addresses, respectively. The second detector includes a plurality of detectors. The output from a third detector is used as information about whether or not certain charged particles penetrate the second detector. The loss energy characteristics of charged particles to be measured are expressed in the first and second addresses. The number of times the charged particles are measured for loss energy are counted with respect to the addresses. When the series of detectors constituting the first, second, and third detectors suffers a failure, a measurement mode excluding any failed detector is employed to continue measurement.

Abstract: An electron beam detector detects a peak of a spectrum, and when a peak position is deviated from a reference position on the electron beam detector, a controller for controlling an electron beam position on the electron beam detector is used to correct a deviation. An electron energy loss spectrum is measured while controlling correction a deviation between an electron beam position on a specimen, and a peak position of the spectrum, and a spectrum measuring with the electron beam detector.

Abstract: A spectrometer is provided for the energy analysis of charged particles. The spectrometer consists of a hemispherical capacitor energy analyzer, a collimator and entrance aperture that define the solid angle of acceptance and geometric factor of the spectrometer, and a charged particle detector. The entrance aperture and collimator are arranged to maximize the geometric factor of the analyzer while retaining high energy-resolution.

Abstract: A technique for measuring the chemical composition of surface particles or other small features which may be present on semiconductor wafers or other substrates. A particle is irradiated with a variable energy, focused incident electron beam. X-ray or electron emissions from the particle are monitored to detect an increase in output indicating the ionization threshold of the materials in the particle. The incident beam energy is correlated with the thresholds detected to determine the species present in the particle.

Abstract: A scattering target constituting an electron spin analyzer is supported by a scattering target-holding member made of a conductive material from the outside of the space formed by an accelerating electrode and an electrode supporter. Then, the scattering target-holding member is supported in insulation by an insulation supporting member made of an insulating material. Moreover, a guiding member is provided so as to cover the periphery of the insulation supporting member for guiding the scattering target, the scattering target-holding member and the insulation supporting member.

Abstract: Novel method and apparatus are disclosed for inspecting a wafer surface to detect the presence thereon of exposed conductive material, particularly for determining the integrity of contact holes and vias, in semiconductor wafer manufacturing. The method comprises the steps of irradiating a spot of the wafer surface with a beam having a wavelength sufficiently shorter than the working function of the metal, such as deep UV light beam, collecting the electrons released by the irradiated wafer, generating an electrical signal that is a function of the collected electrons, and inspecting the signal to determine whether the contact holes or vias within the irradiated wafer spot are open. The apparatus comprises a vacuum chamber having therein a stage and chuck for supporting the wafer. An illumination source generates irradiating energy which is formed into a beam using appropriate optics so as to obtain the desired beam spot of the wafer's surface.

Abstract: A Wien filter is provided in which a less amount of secondary aberration is produced than conventional. This filter has 12 poles. These poles have front ends facing the optical axis. These front ends have a 12-fold rotational symmetry about the optical axis within the XY-plane perpendicular to the optical axis.

Abstract: An electron-optical system, including irradiation means which irradiates a surface of a sample with an irradiating electron beam and observation means which focuses an observational electron beam emitted from the surface of the sample as an image on electron beam detection means. The observation means includes a plurality of electrodes. The electron-optical system further includes an accelerating electric field disposed between the surface of the sample and at least one of the plurality of electrodes so that the sample is biased to a negative potential, and so that the velocity of the observational electron beam that has just been emitted from the surface of the sample increases monotonically to a positive potential. The velocity of the observational electron beam that has been accelerated to the positive potential is reduced to the ground potential by another of the plurality of electrodes which form the observation means.

Abstract: An electron spectroscopic analyzer using X-rays is provided. The electron spectroscopic analyzer includes an X-ray generator for generating X-rays, an optical system for detecting charged particles emitted from an object irradiated with the X-rays to analyze the object, a vacuum system whose inside is maintained at a low pressure near to vacuum pressure, the vacuum system being provided between the X-ray generator and the optical system, and a blocking unit provided between the X-ray generator and the optical system for preventing elements other than the X-rays emitted from the X-ray generator from flowing into the optical system.

Abstract: A method for inspecting features on a reticle is provided. The method includes providing a layout design of a test feature and transferring the layout design of the test feature onto the reticle. After the test feature is transferred onto the reticle, an image of the transferred layout design is captured to determine whether or not the transfer is acceptable. This determination is made by comparing the captured image of the transferred layout design against the layout design of the test feature. The comparison ascertains deviations between the captured image and the layout design and determines if the deviations fall within a user specified range.

Abstract: A hemisphere accelerating electrode has a double structure composed of an inner accelerating electrode and an outer accelerating electrode. The inner accelerating electrode has an inner introducing inlet and an inner opening, and the outer accelerating electrode has an outer introducing inlet and an outer opening. The aperture angle of the inner introducing inlet is preferably larger than that of the outer introducing inlet by 0.1-5 degrees. Then, the aperture angle of the inner opening is preferably larger than that of the outer opening by 0.1-5 degrees. Moreover, scattered electron detectors have correcting electrodes, respectively, and are arranged in the shifted directions from the introducing direction of electrons by 100-140 degrees.

Abstract: An electron analyzer and its method of operation useful for determining the intensity of a peak in the electron spectrum. The invention is particularly useful for determining the intensity of an Auger peak of a given element in the sample being probed and associating the intensity with a concentration of that element in the sample. The electron spectrum is measured above and below the anticipated peak. The data near the peak are not used. The remaining data above the peak and below the peak are fit to respective equations linearly dependent upon the measurement energy. The difference of the two equations at the value of the peak energy is associated with the peak intensity and the elemental concentration. The invention can be applied to measuring nitrogen concentration in a thin protective film of amorphous carbon or diamond.

Abstract: A charged particle beam method and apparatus use a primary electron beam to irradiate a specimen so as to induce the specimen to emit secondary and backscattered electrons carrying information about topographic and material structure of the specimen, respectively. The specimen may be an article to be inspected. The electrons emitted by the specimen are deflected in the electric field of an electron mirror and detected using an electron detector of the apparatus. The electron mirror permits the detection of the secondary electrons traveling close to the optical axis of the apparatus and corrects the aberrations of the secondary electrons. In addition, the electron mirror accelerates the electrons improving the detection efficiency of the electron detector and enhancing the time-of-flight dispersion characteristics of the secondary electron collection. A second electron mirror can be provided to further control the direction of the electron's landing on the surface of the electron detector.

Abstract: Disclosed are methods and apparatus for simultaneously flooding a sample (e.g., a semiconductor wafer) to control charge and inspecting the sample. The apparatus includes a charged particle beam generator arranged to generate a charged particle beam substantially towards a first portion of the sample and a flood gun for generating a second beam towards a second portion of the sample. The second beam is generated substantially simultaneously with the inspection beam. The apparatus further includes a detector arranged to detect charged particles originating from the sample portion. In a further implementation, the apparatus further includes an image generator for generating an image of the first portion of the sample from the detected particles. In one embodiment, the sample is a semiconductor wafer. In a method aspect, a first area of a sample is flooded with a flood beam to control charge on a surface of the sample. A second area of the sample is inspected with an inspection beam.

Abstract: A system and a method for fast characterization of sample's material composition, which is especially beneficial for semiconductor fabrication. The material composition is characterized by analyzing secondary electrons emission from the sample. According to one feature, electron detector is used to collect secondary electrons emanating from the sample. The detector is controlled to collect a specific narrow band of secondary electrons, and the band is controlled to allow for collection of SE at different energies. Two modes are disclosed: spot mode and secondary electron spectroscopy material imaging (SESMI). In the spot mode, a spectrum of SE is obtained from a single spot on the sample, and its characteristics are investigated to obtain information of the material composition of the spot. In the SESMI mode, an SEM image of an area on the sample is obtained. The SE spectrum at each pixel is investigated and correlated to a particular spectrum group.

Abstract: An omega energy filter capable of increasing energy dispersion while canceling out second-order aberrations. The energy filter is mirror-symmetric with respect to the center plane C. A beam enters a first nonuniform magnetic field produced by a first magnet, then enters a second nonuniform magnetic field region produced by a second magnet. The trajectory of the beam is curved by the field produced by the second magnet. Finally, the beam enters a third magnetic field region produced by the first magnet. The beam is deflected in this region and reaches an exit slit.

Abstract: A scanning Kelvin microprobe (SKM) system capable of measuring and analyzing surface characteristics of samples is provided. Also provided is a process of measuring and analyzing surface characteristics of samples. Further, there are provided uses of the SKM system in measuring and analyzing surface characteristics of conductors, semiconductors, insulators, chemicals, biochemicals, photochemicals, chemical sensors, biosensors, biochemical microarrays, microelectronic devices, electronic imaged devices, micromachined devices, nano-devices, corroded materials, stressed materials, coatings, adsorbed materials, contaminated materials, oxides, thin films, and self assembling monolayers.

Abstract: A novel dual beam low energy electron microscope (LEEM) apparatus for inspecting semiconductor circuits or masks. Direct imaging records many pixels in parallel, offering higher inspection rates than prior art scanning methods. A low energy flood beam is superimposed with a second, higher energy flood beam. The use of two beams avoids charging effects upon insulating or partially insulating substrates. Under appropriate conditions, the net charging flux to each image element can be balanced on a pixel by pixel, as well as global basis. Either the low energy or the higher energy beam may be used to form an image of the surface. An electron optical apparatus and configuration for this dual beam LEEM is described.

Abstract: Apparatus for analysis of a thin film formed over an underlying layer on a surface of a sample, the thin film including first elements, while the underlying layer includes second elements. The apparatus includes an electron gun, which directs a beam of electrons to impinge on a point on the surface of the sample at which the thin film is formed. An electron detector receives Auger electrons emitted by the first and second elements responsive to the impinging beam of electrons, and to output a signal indicative of a distribution of energies of the emitted electrons. A controller receives the signal and analyzes the distribution of the energies so as to determine a composition of the first elements in the thin film and a thickness of the thin film.

Abstract: The present invention provides a scanning electron microscope (SEM) or optical inspection method and apparatus which correct differences in brightness between comparison images and thus which is capable of detecting a fine defect with a high degree of reliability without causing any false defect detection. According to the present invention, the brightness values of a pattern, which should be essentially the same, contained in two detected images to be compared are corrected in such a manner that, even if there may be a brightness difference in a portion free from defects, the brightness difference is reduced to such a degree so that it can be recognized as a normal portion. Also, a limit for the amount of correction is furnished in advance, and correction exceeding such limit value is not performed. Such correction prevents the difference in brightness that should be permitted as non-defective from being falsely recognized as a defect without overlooking great differences in brightness due to a defect.

Abstract: A transmission electron microscope (TEM) equipped with an energy filter which functions, the microscope being characterized in that rotation of the created image or diffraction pattern is prevented. The microscope has 6 lens systems, i.e., objective lens system, four intermediate lens systems, and projector lens system. If the mode of operation is varied, the total sum of the products of the numbers of turns of wire on the coils of the lenses of the various lens systems including the objective lens system, the four intermediate lens systems, and the projector lens system, and their respective excitation currents is kept constant.

Abstract: A scanning probe microscope includes a laser diode (1a) as a light source for emitting light lower in energy level than band gap of semiconductor as a sample.

Abstract: A polarimeter for analysing the electron-spin polarisations of an electron beam, the polarimeter comprising first target means comprising a layer of material for scattering a beam of electrons in directions dependent upon the transverse spin-orientation of the incident electrons, and first detector means for detecting the scattered electrons. The polarimeter also having second target means comprising a layer of ferromagnetic material, magnetising means for magnetising the ferromagnetic layer such that the second target means will transmit a beam of electrons at a rate dependent upon the longitudinal spin-orientation of the electrons, and second detector means for detecting the transmitted electrons.

Abstract: The invention relates to a monochromator on the basis of Wien filters. According to a first aspect, four Wien filters are arranged in series along a common optical axis of which the two center Wien filters are each rotated by 90° relative to the two outer Wien filters. The two center Wien filters (W2, W3) are orientated simultaneously anti-parallel to each other. Such a monochromator has inherent stigmatic imaging characteristics and is, as a unit, free of dispersion. According to a further aspect, each of the Wien filters is configured symmetrically with reference to a 90° rotation about the optical axis. The magnetic and the electrostatic poles of the Wien filter are identically dimensioned so that the orientation of the Wien filter azimuthally about the optical axis (OA) can be varied by a corresponding drive of the particular contacts for the voltage supply and current supply of the electrodes and coils.

Abstract: The invention relates to an electron/ion gun for electron or ion beams, comprising a beam source and a monochromator. According to the invention, said monochromator is equipped with an additional beam guidance system and a switchover element which conveys the particles coming from the beam source to either the monochromator or the rest of the beam guidance system is provided at the input of the monochromator.

Abstract: The intention is to provide a process for the contrast enhancement of a specific particle in an image of a specimen, taken by a transmission electron microscope, in which a calculated contrast-rich image is created by way of the background intensities calculated from the intensities of a first image being drawn off pixel by pixel, whereby the background intensities are calculated as a function of the intensities of a second image. In this situation, it is intended that this process should feature a higher range of application than processes known hitherto, and, in particular, are well-suited for contrast enhancement for gold particles in immuno-gold marking.

Abstract: An object of the present invention is to provide an ultimate analyzer which can display an element distribution image of an object to be analyzed with high contrast to determine the positions of the element distribution with high accuracy, and a scanning transmission electron microscope and a method of analyzing elements using the ultimate analyzer. The present invention exists in an ultimate analyzer comprising a scattered electron beam detector for detecting an electron beam scattered by an object to be analyzed; an electron spectrometer for energy dispersing an electron beam transmitted through the object to be analyzed; an electron beam detector for detecting said dispersed electron beam; and a control unit for analyzing elements of the object to be analyzed based on an output signal of the electron beam detected by the electron beam detector and an output signal of the electron beam detected by the scattered electron beam detector.

Abstract: An object of the present invention is to provide an ultimate analyzer which can display an element distribution image of an object to be analyzed with high contrast to determine the positions of the element distribution with high accuracy, and a scanning transmission electron microscope and a method of analyzing elements using the ultimate analyzer.

Abstract: The invention relates to an electron energy filter with magnetic deflection regions and a substantially W-shaped beam path. The energy filter has at least four magnetic deflection regions, that are respectively separated from each other by drift paths in the space free from magnetic fields. The whole filter is thus symmetrical with respect to a midplane (M). The total deflection angle in the first and last deflection region is at least 135°, and all the deflection regions together effect a deflection of the optical axis through an angle between 90° and 210°, preferably through 180°. The energy filter has a large Helmholtz length that is greater than double the average value of the deflection radii in the deflection regions.

Abstract: An autoadjusting charged-particle probe-forming apparatus improving the resolution of probe-forming charged-particle optical systems by minimizing optical aberrations. The apparatus comprises a source of charged particles, a probe-forming system of charged-particle lenses, a plurality of detectors optionally comprising a two-dimensional image detector, power supplies, a computer and appropriate software. Images are recorded by the two-dimensional detector and analyzed to determine the aberration characteristics of the apparatus. Alternately, multiple scanned images are recorded by a scanned image detector and also analyzed to determine the aberration characteristics of the apparatus. The aberration characteristics are used to automatically adjust the apparatus for improved optical performance.

Abstract: Apparatus and methods are disclosed for measuring the state of contamination of one or more optical components in an optical system, such as in an X-ray optical system. Also disclosed are microlithography systems including a device for monitoring accumulation of a contaminant substance on a surface of an optical component of the system. The optical component is irradiated with a beam of electromagnetic radiation or a beam of charged particles (e.g., electron beam). The state of contamination of the optical component is measured by detecting electrons emitted from the optical component as the optical component is being irradiated with the beam. Electrons are quantified that are within a specified energy range of emitted electrons.

Abstract: A scanning transmission electron microscope (STEM) has an electron source for generating a primary electron beam and an electron illuminating lens system for converging the primary electron beam from the electron source onto a specimen for illumination. An electron deflecting system is provided for scanning the specimen with the primary electron beam. The STEM also has a scattered electron detector for detecting scattered electrons transmitted through the specimen. A projection lens system projects the scattered electrons onto a detection surface of the scattered electron detector. An image displaying device displays the scanning transmission electron microscope image of the specimen using a detection signal from the scattered electron detector. A detection angle changing device for establishes the range of the scattering angle of the scattered electrons detected by the scattered electron detector.

Abstract: A spectrometer is provided for the energy analysis of charged particles. The spectrometer consists of a hemispherical capacitor energy analyzer, a collimator and entrance aperture that define the solid angle of acceptance and geometric factor of the spectrometer, and a charged particle detector. The entrance aperture and collimator are arranged to maximize the geometric factor of the analyzer while retaining high energy-resolution.

Abstract: Apparatus and a method for non-contact electrical testing of printed circuit boards, solid state display devices, integrated circuits and other substrates with traces that connect together components of a circuit, using two modulated charged particle beams. The apparatus includes two sources of beams, electrodes to modulate the beams, optics to focus the beams and deflection coils to deflect the beams over a large area. The apparatus also has an enclosure around the optics and the deflection coils of magnetically soft material. A surrounding solenoid excitation coil creates an almost uniform axial magnetic field within the magnetic enclosure. A detection system for detecting the voltage contrast signals, including suitable signal processing system is also provided. The use of two beams simultaneously allows fast, direct measurement of impedance parameters. By selecting appropriate beam modulation frequencies, the sensitivity to a certain kind of defect can be selectively increased.

Abstract: An electron energy analyzer integrated with a low-pass energy filter. The electron energy analyzer includes a separation region disposed inside a coil creating a magnetic field parallel to an axis of the separation region. The magnetic field is terminated at both ends of the separation region and shunted by a magnetic yoke around the outside of the coil. Electrons entering the separation region at a polar angle with respect to the axis accumulate an azimuthal angle dependent on the energy of the electron. Thereby, the direction the electron is traveling when it exits the separation angle depends upon its energy. According to the invention, a low-pass reflector is positioned at the input side of the analyzer, for example, a grounded grid in back of which is positioned a negatively biased absorption electrode. Electrons having energy exceeding the electrode bias are absorbed. Electrons having energy less than the electrode bias are reflected and exit the reflector with the same energy as before.

Abstract: A monochrometer mounted with the electron gun of an electron microscope or the like. This monochrometer does not need movement of a slit. An electron source consisting of any one of a thermal emission-type electron source (such as an LaB6 electron source or a tungsten hairpin), a Schottky emission-type electron source, and a tunneling field emission-type electron source is used. The slit is made of a single metal plate and mounted in position fixedly. Electrons are emitted from the electron source and dispersed within a plane including the slit according to energies. The slit is so positioned that it passes only those of the dispersed electrons which have energies close to the peak energy and blocks electrons having energies higher or lower than the peak energy.

Abstract: A device for imaging a beam of particles composed of charged particles with a certain energy and angle distribution on a detector device using a device, including a deflection unit with at least one deceleration lens provided for forming essentially parallel particle paths in the particle beam, whose reciprocal distances correspond to the angle distribution of the particles, and a filtering unit, which is located between the deflection unit and the detector facility, whereby the filtering unit may be biased with a potential for formation of a braking field and is adapted to be energy-selectively permeable for the particles, on the sample side before the deflection unit, an entry window in the form of an axial-symmetrical staged aperture or an entry grid is located, which is electrically separated from the deflection unit and at ground potential.

Abstract: A scanning probe microscope includes (a) a first device which causes a relative displacement between an object and a probe, (b) a detector which detects a change in interaction caused by the first device between the probe and the object, (c) a second device which feeds the detected change back to the relative displacement to keep the interaction equal to a constant, (d) an adder which adds the detected change to the constant while the interaction is fed back to a distance between the probe and the object, to thereby temporarily vary the constant, (e) a collector which collects signals relating to a displacement which signals are varied as the constant is varied, and calculates a relation among the signals, and (f) a third device which returns the temporarily varied constant back to the constant for scanning the object, calculates products of the relation with each of the signals in real-time, and sums the products, which products indicate a profile of a surface of the object.

Abstract: A scanning force microscope system that employs a laser (76) and a probe assembly (24) mounted in a removable probe illuminator assembly (22), that is mounted to the moving portion of a scanning mechanism. The probe illuminator assembly may be removed from the microscope to permit alignment of said laser beam onto a cantilever (30) after removal. This prevents damage to, and shortens alignment time of, the microscope during replacement and alignment of the probe assembly. The scanning probe microscope assembly (240) supports a scanning probe microscope (244). Scanning probe microscope (244) holds a removable probe sensor assembly (242). Removable probe sensor assembly (242) may be transported and conveniently attached to the adjustment station (250) where the probe sensor assembly parameters may be observed and adjusted if necessary. The probe sensor assembly (242) may then be attached to the scanning probe microscope (244).