Abstract: A multi-beam inspection apparatus supporting a plurality of operation modes is disclosed. The charged particle beam apparatus for inspecting a sample supporting a plurality of operation modes comprises a charged particle beam source configured to emit a charged particle beam along a primary optical axis, a movable aperture plate, movable between a first position and a second position, and a controller having circuitry and configured to change the configuration of the apparatus to switch between a first mode and a second mode. In the first mode, the movable aperture plate is positioned in the first position and is configured to allow a first charged particle beamlet derived from the charged particle beam to pass through. In the second mode, the movable aperture plate is positioned in the second position and is configured to allow the first charged particle beamlet and a second charged particle beamlet to pass through.

Abstract: Apparatus and methods for adjusting beam condition of charged particles are disclosed. According to certain embodiments, the apparatus includes one or more first multipole lenses displaced above an aperture, the one or more first multipole lenses being configured to adjust a beam current of a charged-particle beam passing through the aperture. The apparatus also includes one or more second multipole lenses displaced below the aperture, the one or more second multipole lenses being configured to adjust at least one of a spot size and a spot shape of the beam.

Abstract: A particle beam system includes: a particle source to generate a beam of charged particles; a first multi-lens array including a first multiplicity of individually adjustable and focusing particle lenses so that at least some of the particles pass through openings in the multi-lens array in the form of a plurality of individual particle beams; a second multi-aperture plate including a multiplicity of second openings downstream of the first multi-lens array so that some of the particles which pass the first multi-lens array impinge on the second multi-aperture plate and some of the particles which pass the first multi-lens array pass through the openings in the second multi-aperture plate; and a controller configured to supply an individually adjustable voltage to the particle lenses of the first multi-lens array and thus individually adjust the focusing of the associated particle lens for each individual particle beam.

Abstract: The present disclosure provides a sample analyzer and an analyzing method thereof. The sample analyzer includes a first beam source configured to provide a first energy beam to a sample, a second beam source configured to provide a second energy beam, which is different from the first energy beam, to the sample, a reflected beam sensor disposed between the second beam source and the sample to detect a reflected beam of the second energy beam, which is reflected by one side of the sample, and a transmitted beam sensor disposed adjacent to the other side of the sample to detect a transmitted beam of the second energy beam.

Abstract: There is provided an analytical method capable of generating a high resolution spectrum of X-rays with an intended energy. The analytical method is for use in an analytical apparatus having a diffraction grating for spectrally dispersing X-rays emanating from a sample, an image sensor for detecting the spectrally dispersed X-rays, and an incident angle control mechanism for controlling the incident angle of X-rays impinging on the diffraction grating. The image sensor has a plurality of photosensitive elements arranged in the direction of energy dispersion. The analytical method starts with specifying an energy of X-rays to be acquired. The incident angle is adjusted based on the specified energy to bring the focal plane of the diffraction grating into positional coincidence with those one or ones of the photosensitive elements which detect X-rays having the specified energy.

Abstract: An objective lens arrangement includes a first, second and third pole pieces, each being substantially rotationally symmetric. The first, second and third pole pieces are disposed on a same side of an object plane. An end of the first pole piece is separated from an end of the second pole piece to form a first gap, and an end of the third pole piece is separated from an end of the second pole piece to form a second gap. A first excitation coil generates a focusing magnetic field in the first gap, and a second excitation coil generates a compensating magnetic field in the second gap. First and second power supplies supply current to the first and second excitation coils, respectively. A magnetic flux generated in the second pole piece is oriented in a same direction as a magnetic flux generated in the second pole piece.

Abstract: A fast method of imaging a 2D sample with a multi-beam particle microscope includes the following steps: providing a layer of the 2D sample; determining a feature size of features included in the layer; determining a pixel size based on the determined feature size in the layer; determining a beam pitch size between individual beams in the layer based on the determined pixel size; and imaging the layer of the 2D sample with a setting of the multi-beam particle microscope based on the determined pixel size and based on the determined beam pitch size.

Abstract: A detection and correction method for an electron beam system are provided. The method includes emitting an electron beam towards a specimen; modulating a beam current of the electron beam to obtain a beam signal. The method further includes detecting, using an electron detector, secondary and/or backscattered electrons emitted by the specimen to obtain electron data, wherein the electron data defines a detection signal. The method further includes determining, using a processor, a phase shift between the beam signal and the detection signal. The method further includes filtering, using the processor, the detection signal based on the phase shift.

Abstract: Provided is a technique capable of achieving both throughput and robustness for a function of adjusting brightness (B) and contrast (C) of a captured image in a charged particle beam device. The charged particle beam device includes a computer system having a function (ABCC function) of adjusting the B and the C of an image obtained by imaging a sample. The computer system determines whether adjustment is necessary based on a result obtained by evaluating a first image obtained by imaging an imaging target of the sample (step S2), executes, when the adjustment is necessary based on a result of the determination, the adjustment on a second image of the imaging target to set an adjusted B value and an adjusted C value (step S4), and captures a third image of the imaging target based on the adjusted setting values to generate an image for observation (step S5).

Abstract: A lateral flow test system having an optical reader, a lateral flow cartridge and a computer system is provided. The lateral flow cartridge includes a porous test strip with a reading window into the porous test strip exposing an exposed zone of the porous strip. The optical reader has a reader housing and a slot for inserting the cartridge into the reader housing. The optical reader has an illumination arrangement adapted for illuminating the exposed zone of the porous strip when the cartridge is inserted into the slot. The optical reader further has a video camera configured for acquiring a series of digital images comprising the exposed zone of the porous strip. The computer system receives sets of pixel data representing the plurality of consecutive digital images and calculates wetting progress along the length of the exposed zone of the porous strip based on the sets of pixels data.

Abstract: An improved system and method for inspection of a sample using a particle beam inspection apparatus, and more particularly, to systems and methods of scanning a sample with a plurality of charged particle beams. An improved method of scanning an area of a sample using N charged particle beams, wherein Nis an integer greater than or equal to two, and wherein the area of the sample comprises a plurality of scan sections of N consecutive scan lines, includes moving the sample in a first direction. The method also includes scanning, with a first charged particle beam of the N charged particle beams, first scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the first charged particle beam. The method further includes scanning, with a second charged particle beam of the N charged particle beams, second scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the second charged particle beam.

Abstract: Systems, methods, and programming are described for inspecting a substrate having a pattern imaged thereon, including obtaining a plurality of selected target locations on the substrate, the selected target locations dependent on characteristics of the pattern, scanning the substrate with a plurality of electron beamlets, wherein the scanning includes individually addressing the beamlets to impinge on the selected target locations independently, detecting a reflected or a transmitted portion of the beamlets, and generating images of the selected target locations.

Abstract: The objective of the present invention is to use brightness images acquired under different energy conditions to estimate the size of a defect in the depth direction in a simple manner. A charged-particle beam device according to the present invention determines the brightness ratio for each irradiation position on a brightness image while changing parameters varying the signal amount, estimates the position of the defect in the depth direction on the basis of the parameters at which the brightness ratio is at a minimum, and estimates the size of the defect in the depth direction on the basis of the magnitude of the brightness ratio (see FIG. 5).

Abstract: Disclosed herein an apparatus and a method for detecting buried features using backscattered particles. In an example, the apparatus comprises a source of charged particles; a stage; optics configured to direct a beam of the charged particles to a sample supported on the stage; a signal detector configured to detect backscattered particles of the charged particles in the beam from the sample; wherein the signal detector has angular resolution. In an example, the methods comprises obtaining an image of backscattered particles from a region of a sample; determining existence or location of a buried feature based on the image.

Abstract: A method for preparing a sample for transmission electron microscopy (TEM) comprises providing a substrate having a patterned area on its surface that is defined by a particular topography. A conformal layer of contrasting material is deposited on the topography by depositing a layer of the contrasting material on a local target area of the substrate, spaced apart from the patterned area via Electron Beam Induced Deposition (EBID). The deposition parameters, the thickness of the layer deposited in the target area, and the distance of the target area to the patterned area are selected so that a conformal layer of the contrasting material is formed on the topography of the patterned area. A protective layer is subsequently deposited. The protective layer does not damage the topography in the patterned area because the patterned area is protected by the conformal layer.

Abstract: An object of the invention is to accurately correct a deviation in position or angle between observation regions in an imaging device that acquires images of a plurality of sample sections. The imaging device according to the invention identifies a correspondence relationship between the observation regions between the sample sections using a feature point on a first image, corrects a deviation between the sample sections using a second image in a narrower range than the first image, and after reflecting a correction result, acquires a third image having a higher resolution than the second image (see FIG. 6B).

Abstract: Disclosed herein, inter alia, are methods and systems of image analysis useful for rapidly identifying and/or quantifying features.

Abstract: A charged-particle beam microscope is provided for imaging a sample. The microscope has a vacuum chamber to maintain a low-pressure environment. A motorized stage is provided to hold and move a sample in the vacuum chamber. A charged-particle beam source generates a charged-particle beam. Charged-particle beam optics converge the charged-particle beam onto the sample. A detector is provided to detect charged-particle radiation emanating from the sample. A controller analyzes the detected charged-particle radiation to generate an image of the sample. A power supply powers at least the charged-particle beam optics and the controller. The charged-particle beam microscope weighs less than about 50 kg.

Abstract: An electron beam device obtains contrast reflecting an electronic state of a sample with high sensitivity. The device includes an electron optical system which emits an electron beam to a sample and detects electrons emitted from the sample; a light pulse emission system that emits a light pulse to the sample; a synchronization processing unit that samples the emitted electrons; an image signal processing unit which forms an image by a detection signal output based upon the emitted electrons detected by the electron optical system; and a device control unit for setting a control condition of the electron optical system. The device control unit sets a sampling frequency for detection sampling of the emitted electrons to be greater than a value obtained by dividing the number of emissions of the light pulse per unit pixel time by the unit pixel time.

Abstract: An object of the invention is to easily acquire images of a position corresponding among a plurality of sample sections in an imaging device that acquires images of the plurality of sample sections. The imaging device according to the invention generates a cursor for specifying a first observation region and a contour portion of a first sample section, and superimposes the cursor on a contour portion of a second sample section so as to calculate coordinates of a second observation region of the second sample section.

Abstract: A method, a non-transitory computer readable medium and a system for focusing an electron beam. The method may include focusing the electron beam on at least one evaluated area of a wafer, based on a height parameter of each one of the at least one evaluated area. The wafer includes a transparent substrate. The height parameter of each one of the at least one evaluated area is determined based on detection signals generated as a result of an illumination of one or more height-measured areas of the wafer with a beam of photons. The illumination occurs while one or more supported areas of the wafer contact one or more supporting elements of a chuck, and while each one of the one or more height-measured areas are spaced apart from the chuck by a distance that exceeds a depth of field of the optics related to the beam of photons.

Abstract: An inspection system of semiconductor device includes a light source for producing a light beam, a lens module including at least one metalens, a receiver, and a processor. During an inspection process, the light beam emitted from the light source is focused on a target object by the metalens of the lens module and is reflected to form a reflected light by the target object. The receiver is used for receiving the reflected light. The processor is used for receiving an electric signal corresponding to the reflected light and generating an inspection result.

Abstract: A charged particle apparatus includes: a specimen chamber which is maintained at vacuum and in which a specimen is disposed; a preliminary exhaust chamber that is connected to the specimen chamber via a vacuum gate valve; an exhaust device that exhausts the preliminary exhaust chamber; charged particle beam source an optical system; a detector; a transporting device that transports the specimen from the preliminary exhaust chamber to the specimen chamber; and a control unit. The control unit performs: adjustment processing in which at least one of the optical system and the detector is adjusted in a state where the specimen is housed in the preliminary exhaust chamber; and transporting processing which is performed after the adjustment processing and in which the vacuum gate valve is opened and the transporting device transports the specimen to the specimen chamber.

Abstract: The present disclosure relates to transmission electron microscopy for evaluation of biological matter. According to an embodiment, the present disclosure further relates to an apparatus for determining the structure and/or elemental composition of a sample using 4D STEM, comprising a direct bombardment detector operating with global shutter readout, processing circuitry configured to acquire images of bright-field disks using either a contiguous array or non-contiguous array of detector pixel elements, correct distortions in the images, align each image of the images based on a centroid of the bright-field disk, calculate a radial profile of the images, normalize the radial profiles by a scaling factor, calculate the rotationally-averaged edge profile of the bright-field disk, and determine elemental composition within the specimen based on the characteristics of the edge profile of the bright-field disk corresponding to each specimen location.

Abstract: Systems and methods for observing a sample in a multi-beam apparatus are disclosed. A charged particle optical system may include a deflector configured to form a virtual image of a charged particle source and a transfer lens configured to form a real image of the charged particle source on an image plane. The image plane may be formed at least near a beam separator that is configured to separate primary charged particles generated by the source and secondary charged particles generated by interaction of the primary charged particles with a sample. The image plane may be formed at a deflection plane of the beam separator. The multi-beam apparatus may include a charged-particle dispersion compensator to compensate dispersion of the beam separator. The image plane may be formed closer to the transfer lens than the beam separator, between the transfer lens and the charged-particle dispersion compensator.

Abstract: An electron microscope apparatus includes a detection unit that detects reflected electrons reflected from a sample when the sample is irradiated with primary electrons emitted by a primary electron generation unit (electron gun), an image generation unit that generates an image of a surface of the sample with the reflected electrons based on output from the detection unit, and a processing unit that generates a differential waveform signal of the image generated by the image generation unit, processes the image by using information of the differential waveform signal, and measures a dimension of a pattern formed on the sample.

Abstract: The mounting device comprises: a mounting head, having a pickup member picking up a component, which moves and places the component at a placement position by picking up the component with the pickup member from a supply section having a holding member holding the component; an imaging section configured to image the component held by the mounting head; and a control section configured to execute: a first placement process in which the component is picked up by the mounting head, positional deviation is corrected based on imaging results of the component captured by the imaging section, and the component is placed at the placement position, and a second placement process in which the component is placed at the placement position by omitting the imaging process by the imaging section at the mounting head when the positional deviation is within a predetermined allowable range.

Abstract: A transistor includes (i) a first wire including a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature and (ii) a second wire including a superconducting component configured to operate in a superconducting state while: a temperature of the superconducting component is below a superconducting threshold temperature and a first input current supplied to the superconducting component is below a current threshold. The semiconducting component is located adjacent to the superconducting component. In response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first input current exceeds the lowered current threshold.

Abstract: Disclosed is a charged particle optical apparatus. The charged particle optical apparatus has a liner electrode in a first vacuum zone. The liner electrode is used to generate an electrostatic objective lens field. The apparatus has a second electrode which surrounds at least a section of the primary particle beam path. The section extends in the first vacuum zone and downstream of the liner electrode. A third electrode is provided having a differential pressure aperture through which the particle beam path exits from the first vacuum zone. A particle detector is configured for detecting emitted particles, which are emitted from the object and which pass through the differential pressure aperture of the third electrode. The liner electrode, the second and third electrodes are operable at different potentials relative to each other.

Abstract: The charged particle beam apparatus includes: a charged particle source configured to generate charged particles; a plurality of scanning electrodes configured to generate electric fields for deflecting charged particles that are emitted by applying an acceleration voltage to the charged particle source, and applying an extraction voltage to an extraction electrode configured to extract the charged particles; an electrostatic lens, which is provided between the plurality of scanning electrodes and a sample table, and is configured to focus a charged particle beam deflected by the plurality of scanning electrodes; and a processing unit configured to obtain a measurement condition, and set each of scanning voltages to be applied to the plurality of scanning electrodes based on the obtained measurement condition.

Abstract: A scanning electron microscope includes an electron-optical system including an electron source and an objective lens, a stage on which a sample is placed, a secondary electron detector disposed adjacent to the electron source relative to the objective lens and configured to detect secondary electrons, a backscattered electron detector disposed between the objective lens and the stage and configured to detect backscattered electrons, a backscattered electron detection system controller configured to apply a voltage to the backscattered electron detector, and a device-control computer configured to detect a state of an electrical charge carried by the backscattered electron detector based on signal intensity at the secondary electron detector when the primary electrons are applied to the sample with a predetermined voltage applied to the backscattered electron detector.

Abstract: A charged particle beam device includes: a charged particle beam source configured to generate a charged particle beam with which a sample is irradiated; a charged particle detection unit configured to detect a charged particle generated when the sample is irradiated with the charged particle beam; an intensity data generation unit configured to generate intensity data of the charged particle detected by the charged particle detection unit; a pulse-height value data generation unit configured to generate pulse-height value data of the charged particle detected by the charged particle detection unit; and an output unit configured to output a first image of the sample based on the intensity data and a second image of the sample based on the pulse-height value data.

Abstract: A device for an MeV-based ion beam analysis of a sample includes a vacuum measurement chamber, having at least one detector and a sample observation unit, a vacuum system for generating a vacuum within the vacuum measurement chamber, and an ion beam tube and a focusing system for focusing an ion beam. The device further includes a sample transfer system, comprising a sample manipulator including a sample holder for receiving at least one sample. The device additionally includes an in-coupling system for the vacuum-tight connection of the ion beam tube to the measurement chamber, which comprises an ion beam vacuum feedthrough, at least one receiver for a detector, a receiver for receiving the sample observation unit, and a receiver for receiving the sample transfer system. The in-coupling system represents a direct mechanical connection between the components that are the ion lens system, detector and sample observation unit.

Abstract: A method for evaluating a secondary optical system of an electron beam inspection device provided with a primary optical system that irradiates a sample placed at an observation target position with an electron beam emitted from an electron source, and the secondary optical system that forms, on a detector, an enlarged image of an electron beam generated from the sample or an electron beam transmitted through the sample. The method includes: placing a photoelectric surface at the observation target position; irradiating the photoelectric surface with laser; forming an enlarged image of an electron beam generated from the photoelectric surface on the detector by the secondary optical system; and evaluating the secondary optical system based on an electron beam image obtained by the detector.

Abstract: A method of determining a distortion of a field of view of a scanning electron microscope is described. The method may include: providing a sample including substantially parallel lines extending in a first direction; performing scans across the field of view of the sample along respective scan-trajectories extending in a scan direction; the scan direction being substantially perpendicular to the first direction; detecting a response signal of the sample caused by the scanning of the sample; determining a distance between a first line segment of a line and a second line segment of the line, whereby each of the first line segment and the second line segment are crossed by scan trajectories, based on the response signal; performing the previous step for multiple locations within the field of view; and determining the distortion across the field of view, based on the determined distances at the multiple locations.

Abstract: The correlation of optical images with SEM images includes acquiring a full optical image of a sample by scanning the sample with an optical inspection sub-system, storing the full optical image, identifying a location of a feature-of-interest present in the full optical image with an additional sources, acquiring an SEM image of a portion of the sample that includes the feature at the identified location with a SEM tool, acquiring an optical image portion at the location identified by the additional source, the image portions including a reference structure, correlating the image portion and the SEM image based on the presence of the feature-of-interest and the reference structure in both the image portions and the SEM image, and transferring a location of the feature-of-interest in the SEM image into the coordinate system of the image portion of the full optical image to form a corrected optical image.

Abstract: A method for measuring electron mobility according to the present invention, which is performed by an apparatus comprising a chamber forming a sealed space, an electron gun provided in the chamber, and a metal sample disposed opposite to the electron gun in the sealed space, comprises: an electron irradiation step of irradiating the metal sample with electrons by the electron gun; a sample current measurement step of applying a voltage to the metal sample to measure a sample current obtained in the metal sample according to the applied voltage; a secondary electron current calculation step of calculating a secondary electron current through the measured sample current; and an effective incident current definition step of defining the sum of the measured sample current and the calculated secondary electron current as an effective incident current.

Abstract: Charged particle beam systems and methods, such as a multi beam charged particle beam system and related methods, can compensate sample charging.

Abstract: A multi-cell detector may include a first layer having a region of a first conductivity type and a second layer including a plurality of regions of a second conductivity type. The second layer may also include one or more regions of the first conductivity type. The plurality of regions of the second conductivity type may be partitioned from one another by the one or more regions of the first conductivity type of the second layer. The plurality of regions of the second conductivity type may be spaced apart from one or more regions of the first conductivity type in the second layer. The detector may further include an intrinsic layer between the first and second layers.

Abstract: A charged particle beam device includes: a charged particle source; an optical system which acts on a charged particle beam emitted from the charged particle source; a control unit which controls the optical system; and a storage unit which stores previous setting values of the optical system. The optical system includes a first optical element and a second optical element for controlling a state of the charged particle beam to be incident on the first optical element. The control unit obtains an initial value of a setting value of the second optical element based on previous setting values of the second optical element; and changes a state of the charged particle beam by changing the setting value of the second optical element from the obtained initial value and obtains the setting value of the second optical element based on the change in the state of the charged particle beam.

Abstract: An image conversion unit includes a selector and a plurality of image converters. Each image converter is formed from an estimator of machine learning type, and estimates, based on an image acquired under a first observation condition and as a reference image, an image which is presumed to be acquired under a second observation condition. When a particular reference image is selected from among a plurality of reference images displayed on a display, a second observation condition corresponding to the selected reference image is set in an observation mechanism as a next observation condition.

Abstract: A multi-beam apparatus for observing a sample with oblique illumination is proposed. In the apparatus, a new source-conversion unit changes a single electron source into a slant virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample with oblique illumination, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means not only forms the slant virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots. The apparatus can provide dark-field images and/or bright-field images of the sample.

Abstract: An adjustment method for adjusting a path of an electron beam passing through an electron beam device including at least one unit having at least one lens and at least one aligner electrode, and a detector configured to detect the electron beam, the method including: a step of measuring, by a coordinate measuring machine, an assembly tolerance for each of a plurality of the units constituting the electron beam device; a step of determining a shift amount of the electron beam at a position of the at least one of the lenses; a step of determining an electrode condition for each of a plurality of the aligner electrodes included in the units in a manner such that a shift amount of the electron beam is to be the determined shift amount; and a step of setting each of the aligner electrodes to the corresponding determined electrode condition.

Abstract: First shape data representing a three-dimensional shape of a sample unit including a sample is generated based on a result of three-dimensional shape measurement of the sample. Second shape data representing a three-dimensional shape of a structure which exists in a sample chamber is generated. Movement of the sample unit is controlled based on the first shape data and the second shape data such that collision of the sample unit with the structure does not occur.

Abstract: Systems and methods for automated alignment of cathodoluminescence (CL) optics in an electron microscope relative to a sample under inspection are described. Accurate placement of the sample and the electron beam landing position on the sample with respect to the focal point of a collection mirror that reflects CL light emitted by the sample is critical to optimizing the amount of light collected and to preserving information about the angle at which light is emitted from the sample. Systems and methods are described for alignment of the CL mirror in the XY plane, which is orthogonal to the axis of the electron beam, and for alignment of the sample with respect to the focal point of the CL mirror along the Z axis, which is coincident with the electron beam.

Abstract: It is necessary to guarantee performance by quantitatively evaluating the defect detection sensitivity of an inspection device for using the mirror electron image to detect defect in a semiconductor substrate. The size and position of accidentally formed defects are random, however, and this type of quantitative evaluation has been difficult. This semiconductor substrate 101 for evaluation is for evaluating the defect detection sensitivity of an inspection device and comprises a plurality of first indentations 104 that are formed through the pressing, with a first pressing load, of an indenter having a prescribed hardness and shape into the semiconductor substrate for evaluation. Further, a mirror electron image of the plurality of first indentations of the semiconductor substrate for evaluation is acquired, and the defect detection sensitivity of an inspection device is evaluated through the calculation of the defect detection rate of the plurality of first indentations in the acquired mirror electron image.

Abstract: The efficiency of operation in a semiconductor processing apparatus is improved. In order to search an input parameter value to be set in a semiconductor processing apparatus for processing into a target processed shape, a predictive model indicating a relationship between an input parameter value and an output parameter value is generated based on the input parameter value and the output parameter value which is a measured value of a processing result processed by setting the input parameter value in the semiconductor processing apparatus. In this case, when the measured value of the processing result processed by the semiconductor processing apparatus is the defective data, the predictive model is generated based on the input parameter value causing defective data and defective substitute data obtained by substituting the measured value which is the defective data.

Abstract: Provided is a scanning electron microscope provided with an energy selection and detection function for a SE1 generated on a sample while suppressing the detection amount of a SE3 excited due to a BSE in the scanning electron microscope that does not apply a deceleration method.

Abstract: Automated processing is provided. A charged particle beam apparatus includes: an image identity degree determination unit determining whether an identity degree is equal to or greater than a predetermined value, the identity degree indicating a degree of identity between a processing cross-section image that is an SEM image obtained through observation of a cross section of the sample by a scanning electron microscope, and a criterion image that is the processing cross-section image previously registered; and a post-determination processing unit performing a predetermined processing operation according to a result of the determination by the image identity degree determination unit.

Abstract: A particle beam device comprises a first particle beam column for providing a first particle beam and a second particle beam column for providing a second particle beam. Operating the particle beam device may include: supplying the second particle beam with second charged particles onto an object using the second particle beam column, loading a value of a control parameter into a control unit from a database or calculating the value of the control parameter in the control unit, setting an objective lens excitation of a first objective lens of the first particle beam column using the value of the control parameter, detecting second interaction particles using a particle detector. The second interaction particles may emerge from an interaction of the second particle beam with the object when the second particle beam is incident on the object.