Abstract: The present invention relates to a charged particle beam system comprising a deflection subsystem configured to deflect a charged particle beam in a deflection direction based on a sum of analog signals generated by separate digital to analog conversion of a first digital signal and a second digital signal. The present invention further relates to a method of configuring the charged particle beam system so that each of a plurality of regions of interest can be scanned by varying only the first digital signal while the second digital signal is held constant at a value associated with the respective region of interest. The present invention further relates to a method of recording a plurality of images of the regions of interest at the premise of reduced interference due to charge accumulation.

Abstract: Reader and plate methods, operations, and systems for observing a biological sample are shown and described. In one embodiment, a device for observing biological growth, when present, on a growth plate, includes an imaging device and a variable positioning nest. The nest may include a first sunken frame to receive a first growth plate, and an offset second sunken frame to receive a distinct second growth plate in an operating position offset about the first operating position.

Abstract: The present invention relates to a monochromator device. The monochromator device includes a first radiofrequency cavity positioned to receive an output beam from an electron source. A second radiofrequency cavity is positioned to receive the output beam from the first radiofrequency cavity. The first radiofrequency cavity and the second radiofrequency cavity are configured to, in combination, in combination, correct one or more energy deviations in time and space of the output beam.

Abstract: The present disclosure is directed to an inspection tool having an integrated optical laser unit and atomic force probe unit with a detector unit. The inspection tool further includes a processor unit that is coupled to the optical laser unit and the atomic force probe unit and performs a fault location analysis for a device under test. In addition, the present disclosure to methods for inspecting a device under test for defects using an inspection tool having an integrated optical laser unit and atomic force probe unit that includes a detector unit.

Abstract: An embodiment relates to a n-type planar gate DMOSFET comprising a Silicon Carbide (SiC) substrate. The SiC substrate includes a N+ substrate, a N? drift layer, a P-well region and a first N+ source region within each P-well region. A second N+ source region is formed between the P-well region and a source metal via a silicide layer. During third quadrant operation of the DMOSFET, the second N+ source region starts depleting when a source terminal is positively biased with respect to a drain terminal. The second N+ source region impacts turn-on voltage of body diode regions of the DMOSFET by establishing short-circuitry between the P-well region and the source metal when the second N+ source region is completely depleted.

Abstract: Methods for using a single electron microscope system for investigating a sample with twin electron beams having different focal lengths include the steps of emitting electrons toward the sample, forming the electrons into a two beams, and then modifying the focal properties of at least one of the two beams such that they have different focal planes. Once the two beams have different focal planes, the first electron beam is focused at the sample, and the second electron beam is focused so that it acts as a TEM beam that is parallel beam when incident on the sample. Emissions resultant from the first electron beam and the TEM beam being incident on the sample can then be detected by a single detector or detector array and used to generate a TEM image.

Abstract: Disclosed herein is an apparatus comprising: a source of charged particles configured to emit a beam of charged particles along a primary beam axis of the apparatus; a condenser lens configured to cause the beam to concentrate around the primary beam axis; an aperture; a first multi-pole lens; a second multi-pole lens; wherein the first multi-pole lens is downstream with respect to the condenser lens and upstream with respect to the second multi-pole lens; wherein the second multi-pole lens is downstream with respect to the first multi-pole lens and upstream with respect to the aperture.

Abstract: The present disclosure provides a technique enabling accurate ascertaining of a charged state of a resist pattern resulting from irradiation of a charged particle beam. The present disclosure provides a charged particle beam system provided with: a charged particle device provided with a charged particle source, deflectors for causing a primary charged particle beam emitted from the charged particle source to be scanned over a sample, an energy discriminator for performing energy discrimination for secondary electrons emitted when the primary charged particle beam has reached the sample, and a detector for detecting secondary electrons which have passed the energy discriminator; and a computer system for generating a scan image on the basis of signal amounts detected by the detector, which fluctuate during scanning of primary charged particles by the deflectors, and storing the scan image into an image storage unit.

Abstract: A beam control method is provided that can be implemented with any hardware system for imaging and/or cutting such as SEM/FIB/HIM or charged particle lithography which alleviates the deposited energy overlap between pixels to increase resolution and precision while reducing damage. The method includes scanning a workpiece with e-beam lithography, proton lithography, ion beam lithography, optical lithography, ion beam imaging or FIB in a reduced or sub-sampled pattern, to reduce beam overlap, which can include the step of scanning the beam ensuring that there is the largest difference in time and space between consecutive beam locations.

Abstract: A dielectric coated plasmonic photoemitter is provided. An aspect of the present photonic apparatus includes a conductive photoemitter including a dielectric material coating or layered on a metallic core. The dielectric material being configured to enhance a local optical field strength and current density of the photoemitter as compared to a bare photoemitter without the dielectric layer. The dielectric layered photoemitter being tunable to transmit photoemissions from corners thereof with different photonic characteristics depending on a laser wavelength pulse received.

Abstract: A nano-positioning system for fine and coarse nano-positioning including at least one actuator, wherein the at least one actuator includes a high Curie temperature material and wherein the nano-positioning system is configured to apply a voltage to the at least one actuator to generate fine and/or coarse motion by the at least one actuator. The nano-positioning system being a stand-alone system, a scanning probe microscope, or an attachment to an existing microscope configured to perform a method of creepless nano-positioning that includes positioning a probe relative to a first area of a substrate using coarse stepping and interacting with the first area of the substrate using fine motion after less than 60 seconds of the positioning the probe. The movement of the scanning probe microscope is actuated by a high Curie temperature piezoelectric material that limits and/or eliminates creep, hysteresis and aging.

Abstract: A charged particle emission device includes a pre-emission state detector configured to detect a pre-emission charged state which is a charged state of a charged object before the charged particles are emitted, a learned model configured to receive a charged state of a charged object and a control parameter related to a control amount used for control of the charged particles to be emitted to the charged object to generate an estimated charged state which is a charged state of the charged object after the charged particles are controlled under the control parameter and emitted, an estimated charged state generator configured to input the pre-emission charged state and a plurality of control parameters to the learned model to generate a plurality of estimated charged states corresponding to the pre-emission charged state and the plurality of control parameters.

Abstract: A system and method for performing nanoscale thermal property characterization of materials. The system combines the operating principles of thermoreflectance-based techniques and scanning probe microscopy techniques into a hybrid solution capable of deriving thermophysical properties of a sample. A pump laser beam heats a distal end of a cantilever, and a probe laser beam is reflected off of a specular surface at the distal end of the cantilever carrying with it thermoreflectance data that can be used to extract thermophysical properties of the sample region adjacent to a tip suspended at the distal end of the cantilever.

Abstract: Devices and methods are described for performing high angle tilting tomography on samples in a liquid medium using transmission electron beam instruments.

Abstract: A system for passively monitoring territory proximate to or at restrictive boundaries for tunnels, the system comprising a plurality of muon sensors, a data network in communication with each muon sensor, a power network in electrical communication with each muon sensor, and a data analysis unit, the data analysis unit in communication with each muon sensor via the data network, the data analysis unit comprising a memory and a processor, the memory configured to instruct the processor to analyse data from the plurality of muon detectors to identify and locate a new or emerging tunnel. A method of locating tunnels is also provided.

Abstract: In one embodiment a first light plane is generated across the passageway by a first LED emitter array. A corresponding photodiode receiver array detects particles passing through a first number of light channels comprising the first light plane. In a second embodiment a second light plane is generated across the passageway at 90 degrees from the first light plane and longitudinally offset from the first light plane by a second LED emitter array. A corresponding photodiode receiver array detects particles passing through a second number of light channels comprising the second light plane. The second light plane is capable of identifying particles in a third dimension that may go undetected when passing through the first light plane. The raw output signals generated by respective photodiodes is normalized, analyzed and characterized to differentiate between particles passing through light planes as individual particles or groups of overlapping particles to be separately counted.

Abstract: A multi-beam electronics scanning system using swathing. The system includes an electron emitter source configured to emit an illumination beam. The illumination beam is split into multiple electron beams by a beam splitter lens array. The system also includes an electronic deflection system configured to deflect each of the electron beams in a plurality of directions, including a first direction, along two different axes. Last, a swathing stage is used to move a sample with a constant velocity in a second direction that is parallel to the first direction.

Abstract: A superconducting quantum mechanical device includes first, second, third and fourth Josephson junctions connected in a bridge circuit having first, second and third resonance eigenmodes. The device also includes first and second capacitor pads. The first and second capacitor pads and the bridge circuit form a superconducting qubit having a resonance frequency corresponding to the first resonance eigenmode. The device further includes first and second resonator sections. The first and second resonator sections and the bridge circuit form a resonator having a resonance frequency corresponding to the second resonance eigenmode. The device also includes a source of magnetic flux arranged proximate the bridge circuit. The source of magnetic flux is configured to provide, during operation, a magnetic flux through the bridge circuit to cause coupling between the first, second and third resonance eigenmodes when the third resonance eigenmode is excited.

Abstract: Embodiments of the present disclosure provide a detection method and apparatus, an electronic device, and a storage medium. In one form, the detection method includes: providing a layout graphic and a scan graphic; superimposing and comparing the layout graphic and the scan graphic, and extracting a sample non-overlapping pattern; encoding the sample non-overlapping pattern, to form sample coded data; using the sample coded data as input data of machine learning, to obtain a detection model library; and detecting a defect point of a to-be-detected device by using the detection model library. The present disclosure can improve the accuracy of defect point analysis, thereby accelerating the development of technology and improving the production efficiency.

Abstract: A problem is to specify a more proper manufacturing process for a product as a material. A configuration of the present invention for solving the above problem is a manufacturing process optimization system 1 which includes an input device 12 which receives a final product and information on its manufacturing process, a central control device 11 which in accordance with a product management unit 21 stored in a main storage device 14, separates each process block constituting the manufacturing process into functions that the process thereof is responsible for, and selects the sensitivity of each separated function along the manufacturing process to thereby calculate process conditions in all manufacturing process, and an output device 13 which outputs the process conditions.

Abstract: Sample preparation system and method which enable electron microscope observation of a sample slice with simple structure and process are provided. The sample preparation system includes at least one of a plasma treatment apparatus and a sputtering apparatus, as well as a slice collecting apparatus. The plasma treatment apparatus is configured to feed a resin tape in a plasma irradiation area to irradiate the resin tape with plasma, thereby continuously hydrophilizing the resin tape. The sputtering apparatus is configured to feed the resin tape in a sputtering area to continuously perform sputtering on the resin tape, thereby imparting conductivity to the resin tape. The slice collecting apparatus is configured to serially collect slices cut out from a sample onto the resin tape having been subjected to plasma treatment or sputtering.

Abstract: A charged particle beam microscope system is operated in a transmission imaging mode. During the operation, the charged particle beam microsystem directs a charged particle beam to the sample to produce images. A time series of beam tilts is applied in a pattern to the charged particle beam directed to the sample to produce a sequence of images. At least some of the images in the sequence of images are captured while the charged particle beam is transitioning between one beam tilt in the time series of beam tilts and a sequentially adjacent beam tilt in the time series of beam tilts. The pattern is configured to induce image changes between the images in the sequence of images that are indicative of optical aberrations in the charged particle beam microscope system.

Abstract: In one embodiment, a charged-particle trajectory measurement apparatus for measuring a trajectory of a cosmic ray muon as a charged particle includes: a plurality of detectors, each of which generates a detection signal at the time of detecting a cosmic ray muon; a signal processing circuit that processes the detection signal from the detector; a time calculator that calculates the generation time point of the detection signal from the detector on the basis of the signal outputted from the signal processing circuit; a trajectory calculator that calculates the trajectory of the cosmic ray muon on the basis of the generation time point of the detection signal and the positional information of the detector having detected the cosmic ray muon, wherein the signal processing circuit and each of the detectors are integrally configured by being coupled to each other.

Abstract: A structural electronics wireless sensor node is provided that includes layers of electronic components fabricated from patterned nanostructures embedded in an electrically conductive matrix. In some aspects, the structural electronics wireless sensor node includes a plurality of nanostructure layers that each form individual electronic components of the structural electronics wireless sensor node. In certain embodiments, the structural electronics wireless sensor node includes electronic components such as a resistor, a inductor, a capacitor, and/or an antenna.

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.

Abstract: This disclosure relates to monitoring and assessing the mechanical stability and fluid accumulation in natural or man-made slopes comprising primarily of unconsolidated material, such as embankments, dams, roads, waste dumps, as well as man-made heaps of bulk materials that may occur in the stockpiling of grains, gravel, stones, sand, coal, cement, fly ash, salts, chemicals, clays, crushed limestone as well as heaps of mining ores, including crushed, milled and/or agglomerated ore, and run-of-mine materials.

Abstract: A charged particle beam device which prevents an appearance of a shading contrast due to azimuth discrimination and obtains a clear magnetic domain contrast image with a high resolution and a high throughput. The charged particle beam device includes an electron beam source; a sample stage; an objective lens configured to focus electron beams on a sample; a detector that is mounted on a charged particle beam source side with respect to the objective lens and separately detects secondary electrons emitted in azimuth angle ranges of two or more different azimuths for the same observation region; an image processing and image management device including an image processing unit configured to perform synthesis after performing shading correction and contrast adjustment on an image obtained by detecting a first emission azimuth and an image obtained by detecting a second emission azimuth; an image database; and an image display unit.

Abstract: An aperture device (31) is described, which is attachable to a lens system (13). The lens system (13) is arranged to form a particle beam of charged particles, emitted from a sample surface (Ss). The aperture device (31) comprises an end surface (S) which is to be arranged facing the sample surface (Ss), at least one aperture (38) arranged in the end surface (S), a length axis (32) which extends through the centre of said at least one aperture (38), and at least one gas outlet (10), which is arranged at a transverse distance (T) perpendicular from the length axis (32), and is arranged to direct gas into a volume between at least one aperture (38) and the sample surface (Ss). The end surface (S) within a distance, equal to ? of the transverse distance (T), perpendicular from the length axis (32) has a variation along the length axis (32) being smaller than ? of the transverse distance (T).

Abstract: A defect inspection apparatus has a defect detection unit 152 that acquires first defect information on a defect of a photomask blank MB as a substrate; and a comparative information acquisition unit 150 that acquires a result of comparison between predetermined defect information stored in a storage unit 155 and the first defect information.

Abstract: Apparatuses and methods for charged-particle detection may include a deflector system configured to direct charged-particle pulses, a detector having a detection element configured to detect the charged-particle pulses, and a controller having a circuitry configured to control the deflector system to direct a first and second charged-particle pulses to the detection element; obtain first and second timestamps associated with when the first charged-particle pulse is directed by the deflector system and detected by the detection element, respectively, and third and fourth timestamps associated with when the second charged-particle pulse is directed by the deflector system and detected by the detection element, respectively; and identify a first and second exiting beams based on the first and second timestamps, and the third and fourth timestamps, respectively.

Abstract: An inspection device includes control unit that acquires pre-charging irradiation amounts for inspection areas on an inspection target. The pre-charging irradiation amounts are based on pattern information for each of the inspection areas. An irradiation unit is provided to control a plurality of first beams to supply the pre-charging irradiation amounts to each of the inspection areas using a corresponding one of the plurality of first beams. After supplying the respective pre-charging irradiation amount to at least one of the inspection areas, irradiation unit controls one of a plurality of second beams to irradiate a pre-charged one of the inspection areas. A generation unit generates images of each of the plurality of inspection areas based on the respective irradiation of the inspection areas with the second beams.

Abstract: Methods for using electron diffraction holography to investigate a sample, according to the present disclosure include the initial steps of emitting a plurality of electrons toward the sample, forming the plurality of electrons into a first electron beam and a second electron beam, and modifying the focal properties of at least one of the two beams such that the two beams have different focal planes. Once the two beams have different focal planes, the methods include focusing the first electron beam such that it has a focal plane at or near the sample, and focusing the second electron beam so that it is incident on the sample, and has a focal plane in the diffraction plane. An interference pattern of the first electron beam and the diffracted second electron beam is then detected in the diffraction plane, and then used to generate a diffraction holograph.

Abstract: Embodiments may include methods, systems, and apparatuses for correcting a response function of an electron beam tool. The correcting may include modulating an electron beam parameter having a frequency; emitting an electron beam based on the electron beam parameter towards a specimen, thereby scattering electrons, wherein the electron beam is described by a source wave function having a source phase and a landing angle; detecting a portion of the scattered electrons at an electron detector, thereby yielding electron data including an electron wave function having an electron phase and an electron landing angle; determining, using a processor, a phase delay between the source phase and the electron phase, thereby yielding a latency; and correcting, using the processor, the response function of the electron beam tool using the latency and a difference between the source wave function and the electron wave function.

Abstract: An object of the invention is to provide a charged particle beam device capable of increasing the contrast of an observation image of a sample as much as possible in accordance with light absorption characteristics that change for each optical parameter. The charged particle beam device according to the invention changes an optical parameter such as a polarization plane of light emitted to the sample, and generates the observation image having a contrast corresponding to the changed optical parameter. An optical parameter that maximizes a light absorption coefficient of the sample is specified according to a feature amount of a shape pattern of the sample (refer to FIG. 5).

Abstract: A method of measuring a relative rotational angle includes: shifting an electron beam on a specimen plane by using a deflector; tilting the electron beam with respect to the specimen plane by using the deflector; acquiring a first STEM image including information of a scattering azimuth angle and a second STEM image not including the information of the scattering azimuth angle, before the shifting and the tilting; acquiring a third STEM image including the information of the scattering azimuth angle and a fourth STEM image not including the information of the scattering azimuth angle, after the shifting and the tilting; and obtaining the relative rotational angle based on the first STEM image, the second STEM image, the third STEM image and the fourth STEM image.

Abstract: The present invention provides a method for analyzing a silicon substrate, by which impurities such as a very small amount of metal in a silicon substrate provided with a thick nitride film can be analyzed with high accuracy with ICP-MS, and is characterized by use of a silicon substrate analysis apparatus including an analysis scan port having a load port, a substrate conveyance robot, an aligner, a drying chamber, a vapor phase decomposition chamber, an analysis stage and a nozzle for analysis of a substrate; an analysis liquid collection unit; and an analyzer for performing inductive coupling plasma analysis.

Abstract: A rotatable stage for an analytical apparatus. The rotatable stage has a stator, a heat exchanger in thermal connection with the stator, a rotor and a bearing located between the stator and the rotor. The bearing provides a thermal connection between the stator and rotor.

Abstract: A microscope includes: an electronic optical column configured to emit scanning electron beams; a specimen stage configured to place a specimen; a target movably disposed between the electronic optical column and the specimen stage; and a driving mechanism for driving the target to move between a first position and a second position, wherein the first position is a position at which the electron beams act on the specimen, and the second position is a position at which the electron beams act on the target to generate X-rays irradiating the specimen. In the present disclosure, through one time mounting of the specimen, the microscope enables the dual-function detection of the specimen, i.e., detection of the specimen by an SEM and detection of the specimen by a Nano-CT.

Abstract: A charged particle beam apparatus includes a tilt mechanism that tilts a specimen, a detector that detects an electromagnetic wave emitted from the specimen, a table storage unit that stores a table in which tilt angle information on a tilt angle of the specimen and detection solid-angle information on the detection solid angle of the detector are associated with each other, a tilt control unit that controls the tilt mechanism, and a detection-solid-angle information acquisition unit that acquires the tilt angle information from the tilt control unit and acquires the detection solid-angle information with reference to the table.

Abstract: A structural electronics wireless sensor node is provided that includes layers of electronic components fabricated from patterned nanostructures embedded in an electrically conductive matrix. In some aspects, the structural electronics wireless sensor node includes a plurality of nanostructure layers that each form individual electronic components of the structural electronics wireless sensor node. In certain embodiments, the structural electronics wireless sensor node includes electronic components such as a resistor, a inductor, a capacitor, and/or an antenna.

Abstract: Even when the amount of overlay deviation between patterns located in different layers is large, correct measurement of the amount of overlay deviation is stably performed. The charged particle beam device includes a charged particle beam irradiation unit that irradiates a sample with a charged particle beam, a first detection unit that detects secondary electrons from the sample, a second detection unit that detects backscattered electrons from the sample, and an image processing unit that generates a first image including an image of a first pattern located on the surface of the sample based on an output of the first detection unit, and generates a second image including an image of a second pattern located in a lower layer than the surface of the sample based on an output of the second detection unit.

Abstract: Imaging by cryo-electron microscopy (cryo-EM) requires that a sample be encased in an amorphous solid, such as amorphous ice. In current cryo-EM preparation systems, once the sample has been deposited on an EM grid and coated in the amorphous solid, the EM grid must be removed from vacuum and then transferred into the vacuum of the cryo-EM system. As a result, samples deposited on the grid are exposed to damage and contamination. The present invention provides improved EM grid handling systems and devices compatible with advanced cryo-EM sample preparation techniques and which reduce or eliminate exposure of the sample on the grid to atmosphere and elevated temperatures. These methods and devices will also significantly reduce handling time and complexities associated with cryo-EM sample preparation.

Abstract: The purpose of the present invention is to provide an emitter capable of easily and highly efficiently emitting electrons, an electron gun using same, and an electronic device. This emitter is provided with a cathode holder, and an acicular substance secured to the cathode holder. An end, to which the acicular substance is secured, of the cathode holder is bent at ? (?(°) satisfies 5<??70) that is an angle formed with respect to a cathode axis being the longitudinal direction of the cathode holder, the acicular substance is a single crystal nanowire or nanotube, and a relation L/T between the thickness T (?m) of the end of the cathode holder and a length L (?m) by which the acicular substance protrudes from the end satisfies 0.3?L/T?2.5.

Abstract: A light modulated electron source utilizes a photon-beam source to modulate the emission current of an electron beam emitted from a silicon-based field emitter. The field emitter's cathode includes a protrusion fabricated on a silicon substrate and having an emission tip covered by a coating layer. An extractor generates an electric field that attracts free electrons toward the emission tip for emission as part of the electron beam. The photon-beam source generates a photon beam including photons having an energy greater than the bandgap of silicon, and includes optics that direct the photon beam onto the emission tip, whereby each absorbed photon creates a photo-electron that combines with the free electrons to enhance the electron beam's emission current. A controller modulates the emission current by controlling the intensity of the photon beam applied to the emission tip. A monitor measures the electron beam and provides feedback to the controller.

Abstract: According to an embodiment, a method for automated critical dimension measurement on a substrate for display manufacturing is provided. The method includes scanning a first field of view having a first size with a charged particle beam to obtain a first image having a first resolution of a first portion of the substrate for display manufacturing; determining a pattern within the first image, the pattern having a first position; scanning a second field of view with the charged particle beam to obtain a second image of a second portion of the substrate, the second field of view has a second size smaller than the first size and has a second position provided relative to the first position, the second image has a second resolution higher than the first resolution; and determining a critical dimension of a structure provided on the substrate from the second image.

Abstract: One modified source-conversion unit and one method to reduce the Coulomb Effect in a multi-beam apparatus are proposed. In the modified source-conversion unit, the aberration-compensation function is carried out after the image-forming function has changed each beamlet to be on-axis locally, and therefore avoids undesired aberrations due to the beamlet tilting/shifting. A Coulomb-effect-reduction means with plural Coulomb-effect-reduction openings is placed close to the single electron source of the apparatus and therefore the electrons not in use can be cut off as early as possible.

Abstract: The present invention provides an apparatus of electron beam comprising an electron gun with a pinnacle limiting plate having at least one current-limiting aperture. The pinnacle limiting plate is located between a bottom (or lowest) anode and a top (or highest) condenser within the electron gun. A current (ampere) of the electron beam that has passed through the current-limiting aperture remains the same (unchanged) after the electron beam travels through the top condenser and an electron optical column and arrives at a sample space. Electron-electron interaction of the electron beam is thus reduced.

Abstract: In the system and method disclosed, an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from the Si(100)-2X1:H surface by injecting electrons at a negative sample bias voltage. A new lithography method is disclosed that allows the STM to operate under imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative sample bias voltage to deliver the required energy for hydrogen removal. The resulted current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM's feedback loop. This approach offers a significant potential for controlled and precise removal of hydrogen atoms from a hydrogen-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

Abstract: A method for the patterning and control of single electrons on a surface is provided that includes implementing scanning tunneling microscopy hydrogen lithography with a scanning probe microscope to form charge structures with one or more confined charges; performing a series of field-free atomic force microscopy measurements on the charge structures with different tip heights, where interaction between the tip and the confined charge are elucidated; and adjusting tip heights to controllably position charges within the structures to write a given charge state. The present disclose also provides a Gibb's distribution machine formed with the method for the patterning and control of single electrons on a surface. A multi bit true random number generator and neural network learning hardware formed with the above described method are also provided.

Abstract: The disclosure relates to a dimension measurement apparatus that reduces time required for dimension measurement and eliminates errors caused by an operator. Therefore, the dimension measurement apparatus uses a first image recognition model that extracts a boundary line between a processed structure and a background over the entire cross-sectional image and/or a boundary line of an interface between different kinds of materials, and a second image recognition that output information for dividing the boundary line extending over the entire cross-sectional image obtained from the first image recognition model for each unit pattern constituting a repetitive pattern, obtains coordinates of a plurality of feature points defined in advance for each unit pattern, and measures a dimension defined as a distance between two predetermined points of the plurality of feature points.