Abstract: Semiconductor structures can be investigated, e.g., in an in-line quality check. An x-ray scattering measurement, e.g., CD-SAXS, can be used for wafer metrology. The x-ray scattering measurement can be configured based on a slice-and-imaging tomographic measurement using a dual-beam device, e.g., including a focused ion beam device and a scanning electron microscope.

Abstract: A multiple electron beam image acquisition method includes performing scanning with a representative secondary electron beam emitted, based on temporary secondary electron beam deflection conditions, for each of plural positions in a primary electron beam deflection range of a representative primary electron beam, acquiring plural coordinates corresponding to the plural positions, based on detected images of the representative secondary electron beam, each detected at any one of the plural positions in the primary electron beam deflection range of the representative primary electron beam, and calculating, using the plural coordinates acquired, secondary electron beam deflection conditions to cancel movement of the representative secondary electron beam due to movement of the representative primary electron beam in the primary electron beam deflection range of the representative primary electron beam and to fix the irradiation position of the representative secondary electron beam to the predetermined detectio

Abstract: A method includes: providing position data for a plurality of areas on the sample which are to be inspected; providing a first raster arrangement of the plurality of individual particle beams, with a single field of view on the sample assigned to each individual particle beam; defining the position of a nominal scanning area in each single field of view in relation to the first raster arrangement, with the dimensions of the nominal scanning area smaller than the complete single field of view; determining an individual position deviation between a nominal scanning area and the area to be inspected for the at least one individual particle beam; changing the first raster arrangement based on the determined individual position deviation to produce a second raster arrangement of the plurality of individual particle beams; and area-wise scanning the sample using the plurality of individual particle beams in the second raster arrangement.

Abstract: Systems and methods for image enhancement are disclosed. A method for enhancing an image may include acquiring a scanning electron microscopy (SEM) image. The method may also include simulating diffused charge associated with a position of the SEM image. The method may further include providing an enhanced SEM image based on the SEM image and the diffused charge.

Abstract: A system for measuring a satellite ghost efficiency of a diffractive lens is provided. The system includes a light source configured to output a first probing beam, and a beam tweaking assembly disposed between the light source and the diffractive lens, and configured to convert the first probing beam into a second probing beam that is a non-collimated beam. The diffractive lens diffracts the second probing beam into a plurality of diffracted beams including a first diffracted beam of a parent diffraction order and a second diffracted beam of a satellite ghost diffraction order. The beam tweaking assembly includes one or more optical lenses, and an adjustable optical power. The system also includes a detector configured to generate a beam spot pattern including a first beam spot corresponding to the first diffracted beam and a second beam spot corresponding to the second diffracted beam.

Abstract: Methods and apparatus are disclosed for integration of image-based metrology into a milling workflow. A first ion beam milling operation is performed to an edge at a distance from a final target position on a sample. An SEM image of the sample is used to determine a distance between the milled edge and a reference structure on the sample. Based on the determined distance, the ion beam is adjusted to perform a second milling operation to shift the milled edge to the final target position. Extensions to iterative procedures are disclosed. Various geometric configurations and corrections are disclosed. Manufacturing and analytic applications are disclosed in a variety of fields, including read-write head manufacture and TEM sample preparation. Other combinations of imaging and milling tools can be used.

Abstract: Variations in charged-particle-beam (CPB) source location are determined by scanning an alignment aperture that is fixed with respect to a beam defining aperture in a CPB, particularly at edges of a defocused CPB illumination disk. The alignment aperture is operable to transmit a CPB portion to a secondary emission surface that produces secondary emission directed to a scintillator element. Scintillation light produced in response is directed out of a vacuum enclosure associated with the CPB via a light guide to an external photodetection system.

Abstract: Disclosed are compositions and methods for the conductive fixation of organic material, including biological samples. The compositions and methods described herein can address the problems of charging and sample damage caused by electron beam-sample interactions within an electron microscope.

Abstract: A system for detecting carryback within a dump body of a haul truck may include at least one camera and at least one controller. The at least one camera is configured to generate a scan of an interior surface of the dump body. The at least one controller is configured to receive the scan of the interior surface of the dump body and determine a type of dump body by comparing the scan of the interior surface of the dump body with at least one scan of an interior surface of a known dump body.

Abstract: Disclosed are articles comprising substrate and graphene coating that are configured to support a sample for electron or optical microscopy. Also disclosed are methods of making the same and methods of using the same in imaging technology.

Abstract: A charged particle beam device suppresses sample deformation caused by placing a sample on a suctioning surface of an electrostatic chuck mechanism, the sample having a temperature different from the suctioning surface. The charged particle beam device includes the electrostatic chuck mechanism; a stage which moves a sample, which is to be irradiated with a charged particle beam, relative to an irradiation position of the charged particle beam; an insulating body which is disposed on the stage and constitutes a dielectric layer of the electrostatic chuck; a first support member which supports the insulating body on the stage; a ring-shaped electrode which encloses the surroundings of the sample and is installed on the insulating body in a contactless manner, and to which a predetermined voltage is applied; and a second support member which supports the ring-shaped electrode.

Abstract: Disclosed herein are scientific instrument support systems, as well as related methods, computing devices, and computer-readable media. For example, in some embodiments, a method for determining sample location and associated stage coordinates by a microscope at least comprises acquiring, with a navigation camera, an image of a plurality of samples loaded on a fixture, the image being of low resolution at a field of view that includes the fixture and all samples of the plurality of samples, analyzing the image with a trained model to identify the plurality of samples, based on the analysis, associating each sample with a location on the fixture, based on the location on the fixture of each sample, associating separate stage coordinate information with each sample of the plurality of samples loaded on the fixture, and translating a stage holding the fixture to first stage coordinates based on the associated stage coordinate information of a first sample of the plurality of samples.

Abstract: The present disclosure addresses the problem of providing an electron gun that can directly monitor an intensity of an electron beam emitted from a photocathode using only the configuration provided to the electron gun, an electron beam applicator equipped with an electron gun, and a method for controlling an electron gun. The aforementioned problem can be solved by an electron gun comprising a light source, a photocathode that emits an electron beam in response to receiving light from the light source, an anode, an electron-beam-shielding member with which it is possible to shield part of the electron beam, and a measurement unit that measures the intensity of the electron beam emitted from the photocathode using a measurement electron beam shielded by the electron-beam-shielding member.

Abstract: A semiconductor inspection device 1 having a first measurement mode and a second measurement mode includes: an electron optical system configured to irradiate a sample with an electron beam; an optical system configured to irradiate the sample with light; an electron detector configured to detect a signal electron; a photodetector 29 configured to detect signal light; a control unit 11 configured to control the electron optical system and the optical system such that an electron beam and light are emitted under a first irradiation condition in the first measurement mode, and to control the electron optical system and the optical system such that an electron beam and light are emitted under a second irradiation condition in the second measurement mode; and a computer configured to process a detection signal from the electron detector or the photodetector.

Abstract: A method of determining aberrations in images obtained by a charged-particle beam tool, comprising: a) obtaining two or more images of a sample, wherein each image is obtained at a known relative difference in a measurement condition of the charged-particle beam tool; b) selecting an estimated aberration parameter for the aberrations of a probe profile representing the charged-particle beam used by the charged-particle beam tool; c) evaluating an error function indicative of the difference between the two or more images and two or more estimated images that are a function of the estimated aberration parameter and the known relative difference in the measurement condition; d) updating the estimated aberration parameter; e) performing processes c) and d) iteratively; f) determining the final aberration parameter as the estimated aberration parameter that provides the smallest value of the error function.

Abstract: Apparatuses, systems, and methods for multi-modal operations of a multi-beam inspection system are disclosed. An apparatus for generating multi-modal beamlets may include an aperture array which includes a first group of apertures having a first size and a second group of apertures having a second size different from the first size, the second group of apertures adjoining the first group of apertures, in which the first group of apertures and the second group of apertures are in different pass-or-block statuses. A multi-beam apparatus of multi-modal inspection operations may include the aforementioned apparatus, a source configured to emit charged particles, a condenser system configured to set a projection area of the charged particles, and circuitry for controlling the first and second groups of apertures.

Abstract: The invention relates to a method implemented by a data processing apparatus, comprising the steps of receiving an image; providing a set-point for a desired image quality parameter of said image; and processing said image using an image analysis technique for determining a current image quality parameter of said image. In the method, the current image quality parameter is compared with said desired set-point. Based on said comparison, a modified image is generated by using an image modification technique. The generating comprises a step of deteriorating said image in terms of said image quality parameter in case said current image quality parameter exceeds said set-point. The modified image is then output and may be further analysed.

Abstract: Methods and systems for performing sample lift-out and protective cap placement for highly reactive materials within charged particle microscopy systems are disclosed herein. Methods include preparing a nesting void in a support structure, translating at least a portion of a sample into the nesting void, and milling material from a region of the support structure that defines the nesting void. The material from the region of the support structure is milled such that at least some of the removed material redeposits to form an attachment bond between the sample and a remaining portion of the support structure. In various embodiments, the sample can then be investigated using one or more of serial sectioning tomography on the sample, enhanced insertable backscatter detector (CBS) analysis on the sample, and electron backscatter diffraction (EBSD) analysis on the sample.

Abstract: Systems and methods of profiling a charged-particle beam are disclosed. The method of profiling a charged-particle beam may comprise activating a charged-particle source to generate the charged-particle beam along a primary optical axis, modifying the charged-particle beam by adjusting an interaction between the charged-particle beam and a standing optical wave, detecting charged particles from the modified charged-particle beam after the interaction with the standing optical wave, and determining a profile of the charged-particle beam based on the detected charged particles. Alternatively, the method may include activating an optical source, modifying the optical beam by adjusting an interaction between the optical beam and a charged-particle beam, detecting an optical signal from the modified optical beam, and determining a characteristic of the charged-particle beam based on the detected optical signal.

Abstract: A charged particle beam device 1 includes: a plurality of detectors 7 for detecting a signal particle 9 emitted from a sample 8 irradiated with a charged particle beam 3 and converting the detected signal particle 9 into an output electrical signal 17; an energy discriminator 14 provided for each detector 7 and configured to discriminate the output electrical signal 17 according to energy of the signal particle 9; a discrimination control block 21 for setting an energy discrimination condition of each of the energy discriminators 14; and an image calculation block 22 for generating an image based on the discriminated electrical signal. The discrimination control block 21 sets energy discrimination conditions different from each other among the plurality of energy discriminators 14.

Abstract: A system for determining Schottky thermal field emission (TFE) usable current and brightness of a Schottky TFE source is provided, the system including: one or more processors, configured to: acquire and store in a memory a Schottky TFE emission image in a digital format; and determine Schottky TFE usable beam current and brightness for the based on experimentally developed algorithms that utilize usable current criteria and usable emission current density, the usable current criteria being generated based on properties of a central beam component and an outer beam component of Schottky TFE beam current.

Abstract: A system and method for cleaning and inspecting ring frames is disclosed here. In one embodiment, a vacuum valve comprising at least one sealing O-ring; and a pressure monitoring tape on a mating surface on a vacuum processing chamber, wherein the pressure monitoring tape is configured to perform a pressure profile mapping between the mating surface on the vacuum processing chamber and a surface of the at least one sealing O-ring on the vacuum valve to determine a closing condition of the vacuum valve.

Abstract: The purpose of this invention is to estimate the occurrence of defects such as probability pattern defects, with a small number of inspection points. To achieve this purpose, the present invention proposes a system and a computer-readable medium. The system comprises: a step in which first data pertaining to the probability that the edge of a pattern determined on the basis of measurement data for a plurality of measurement points on a wafer is present at a first position is acquired or is generated; a step in which, if the edge is at the first position, second data pertaining to the probability that a film defect covers a region including the first position and a second position which is different to said first position is acquired or generated; and a step in which the probability of the defect occurring is predicted on the basis of the first data and the second data.

Abstract: According to one embodiment, there is provided an analysis method by a scanning transmission electron microscope including a dark field detector that detects dark field images by irradiating a sample with electron beams and detecting electron beams that are transmitted through or scattered from the sample, and an electron beam detector that detects electron diffraction images at radiation points of the electron beams among the electron beams that are transmitted through the sample or scattered from detecting the electron beams transmitted through a hollow portion of the dark field detector. The analysis method includes scanning a plurality of the radiation points set in an attention area by sequentially radiating electron beams at preset incidence angles, and performing detection of dark field images of the attention area and detection of NBD images at each of the plurality of radiation points at the same time.

Abstract: The present disclosure provides a sample rotation system and method. The sample rotation system includes a rotation device, and the rotation device includes: a first carrier connected to a sample; a drive portion connected to the first carrier, wherein the drive portion is configured to drive the first carrier to rotate; and the first carrier drives the sample to rotate from an initial position to a target position; an acquisition device, configured to acquire a rotation state of the sample; and a control unit, electrically connected to the drive portion, and configured to control operation of the drive portion.

Abstract: Aspects of the disclosure provide a method of tilting characterization. The method includes measuring a first tilting shift of structures based on a first disposition of the structures. The structures are formed in a vertical direction on a horizontal plane of a product. A second tilting shift of the structures is measured based on a second disposition of the structures. The second disposition is a horizontal flip of the first disposition. A corrected tilting shift is determined based on the first tilting shift and the second tilting shift.

Abstract: Methods for correcting one or more image aberrations in an electron microscopy image, including cryo-EM images, are provided. The method includes obtaining a plurality of electron microscope (EM) images of an internal reference grid sample having one or more known properties, the plurality of electron microscope images obtained for a plurality of optical conditions and for a plurality of coordinated beam-image shifts. The method may also include, among other features, determining an aberration correction function that predicts aberrations for every point in the imaged area using kernel canonical correlation analysis (KCCA).

Abstract: An object of the invention is to acquire a high-quality image while maintaining an improvement in throughput of image acquisition (measurement (length measurement)). The present disclosure provides a charged particle beam system including a charged particle beam device and a computer system configured to control the charged particle beam device. The charged particle beam device includes an objective lens, a sample stage, and a backscattered electron detector that is disposed between the objective lens and the sample stage and that adjusts a focus of a charged particle beam with which a sample is irradiated. The computer system adjusts a value of an electric field on the sample in accordance with a change in a voltage applied to the backscattered electron detector.

Abstract: The invention concerns a method of forming a medical device, the method comprising: forming a graphene film (100) over a substrate (204); depositing, by gas phase deposition, a polymer material covering a surface of the graphene film (100); and removing the substrate (204) from the graphene film (100), wherein the polymer material forms a support (102) for the graphene film (100).

Abstract: Diverse applications in particle physics experiments and emerging technologies such as Lidar are driving performance increase and cost reduction in giga-hertz sampling-rate high-resolution data conversion. In applications such as these, critical aspects of the data may occur only during relatively short nanosecond portions of observation periods lasting microseconds. Data acquisition architectures that key in on regions of the data containing activity, digitize the data, and provide info to accurately measure the position of the data in time relative to a time reference are described. These architectures may facilitate system implementation and reduce overall system cost.

Abstract: Analyzing a sidewall of a hole milled in a sample to determine thickness of a buried layer includes milling the hole in the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along the sidewall of the hole. After milling, the sidewall of the hole has a known slope angle. From a perspective relative to a surface of the sample, a distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. The thickness of the buried layer is determined using the known slope angle of the sidewall, the distance, and the angle relative to the surface of the sample.

Abstract: A charged particle beam device is provided in which axis adjustment as a superimposing lens is facilitated by aligning an axis of an electrostatic lens resulting from a deceleration electric field with an axis of a magnetic field lens. The charged particle beam device includes: an electron source; an objective lens that focuses a probe electron beam from the electron source on a sample; a first beam tube and a second beam tube through each of which the probe electron beam passes; a deceleration electrode arranged between the first beam tube and a sample; a first voltage source that forms a deceleration electric field for the probe electron beam between the first beam tube and the deceleration electrode by applying a first potential to the first beam tube; and a first moving mechanism that moves a position of the first beam tube.

Abstract: A device includes sample tray units, a sample tray transporting unit, a sample tray handling unit, and a sample tray radiation stage unit. The sample tray units are configured to load samples. The sample tray transporting unit is configured to carry a sample tray unit to a radiation room. The sample tray handling unit is between the sample tray transporting unit and the sample tray radiation stage unit, and is configured to transfer the sample tray unit on the sample tray transporting unit to the sample tray radiation stage unit or return the sample tray unit on the sample tray radiation stage unit to the sample tray transporting unit. The sample tray radiation stage unit is configured to carry the sample tray unit and move the samples to be irradiated in the sample tray unit to a particle beam radiation area to receive radiation.

Abstract: Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not greater than a threshold dose rate, a diffraction image including the diffraction peak is generated by counting electron detection events. Values of pixels belonging to the diffraction peak are determined with a first set of counting parameter values corresponding to a first coincidence area. Values of pixels not belonging to any of the multiple diffraction peaks are determined using a second, set of counting parameter values corresponding to a second, different, coincidence area.

Abstract: The present invention is in the field of a vacuum transfer assembly, such as for cryotransfer, and specifically a TEM vacuum transfer assembly, which can be used in microscopy, a sample holder, a vacuum housing, a sample holder stage and a sample holder coupling unit for use in the assembly, and a microscope comprising said assembly as well as a method of vacuum transfer into a microscope.

Abstract: There is provided a system and method of examination of a semiconductor specimen, comprising: obtaining a sequence of frames of an area of the specimen acquired by an electron beam tool configured to scan the area from a plurality of directions, the sequence comprising a plurality of sets of frames each acquired from a respective direction; and registering the plurality of sets of frames and generating an image of the specimen based on result of the registration, comprising: performing, for each direction, a first registration among the set of frames acquired therefrom, and combining the registered set of frames to generate a first composite frame, giving rise to a plurality of first composite frames respectively corresponding to the plurality of directions; and performing a second registration among the plurality of first composite frames, and combining the registered plurality of first composite frames to generate the image of the specimen.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming recesses adjacent to two sides of the gate structure, forming a buffer layer in the recesses, forming a first linear bulk layer on the buffer layer, forming a second linear bulk layer on the first linear bulk layer, forming a bulk layer on the second linear bulk layer, and forming a cap layer on the bulk layer.

Abstract: There is provided a charged particle beam system having a computer system for controlling an acceleration voltage of a charged particle beam emitted from a charged particle source, the system including: a first diaphragm group having first and second diaphragms which are diaphragms that act on the charged particle beam and have different thicknesses; and a first diaphragm switching mechanism for switching the diaphragm in the first diaphragm group, in which the computer system controls the first diaphragm switching mechanism so as to switch from the first diaphragm to the second diaphragm according to an increase or decrease of the acceleration voltage.

Abstract: Disclosed herein is a module for supporting a device configured to manipulate charged particle paths in a charged particle apparatus, the module comprising: a support arrangement configured to support the device, wherein the device is configured to manipulate a charged particle path within the charged particle apparatus; and a support positioning system configured to move the support arrangement within the module; wherein the module is arranged to be field replaceable in the charged particle apparatus.

Abstract: When adjusting optical axes of a multi-beam charged particle beam device, because parameters of optical systems are inter-dependent, the time required to adjust the parameters increases. Thus, the present invention provides a charged particle beam device provided with an optical parameter setting unit for setting parameters of optical systems for emitting a plurality of primary charged particle beams to a sample, detectors for individually detecting a plurality of secondary charged particle beams discharged from the sample, a plurality of memories for storing signals detected by the detectors and converted into digital pixels in the form of images, evaluation value derivation units for deriving evaluation values of the primary charged particle beams from the images, and a GUI capable of displaying the images and receiving an input from a user, wherein the GUI displays the images and evaluation results based on the evaluation values and changes various optical parameters in real-time.

Abstract: Provided is an electromagnetic field control member, the member including an insulating member made of a ceramic having a tubular shape and including a plurality of through holes extending in an axial direction; a conductive member that is made of a metal, seals off each of the through holes, and leaves an opening portion in the through hole, the opening portion opening to an outer periphery of the insulating member; and a power feed terminal connected to the conductive member. The through holes each include inner wall surfaces further including inclined surfaces for which a width between inner walls facing each other increases from an inner periphery of the insulating member to an outer periphery of the insulating member: and vertical surfaces that are located on an inner peripheral side of the insulating member and for which a width between inner walls facing each other is constant.

Abstract: A metrology tool for determining a parameter of interest of a structure fabricated on a substrate, the metrology tool comprising: an illumination optical system for illuminating the structure with illumination radiation under a non-zero angle of incidence; a detection optical system comprising a detection optical sensor and at least one lens for capturing a portion of illumination radiation scattered by the structure and transmitting the captured radiation towards the detection optical sensor, wherein the illumination optical system and the detection optical system do not share an optical element.

Abstract: Embodiments consistent with the disclosure herein include methods and a multi-beam apparatus configured to emit charged-particle beams for imaging a top and side of a structure of a sample, including: a deflector array including a first deflector and configured to receive a first charged-particle beam and a second charged-particle beam; a blocking plate configured to block one of the first charged-particle beam and the second charged-particle beam; and a controller having circuitry and configured to change the configuration of the apparatus to transition between a first mode and a second mode. In the first mode, the deflector array directs the second charged-particle beam to the top of the structure, and the blocking plate blocks the first charged-particle beam. And in the second mode, the first deflector deflects the first charged-particle beam to the side of the structure, and the blocking plate blocks the second charged-particle beam.

Abstract: Apparatuses, systems, and techniques to animate objects in computer-generated graphics. In at least one embodiment, one or more neural networks are trained to identify one or more forces to be applied to one or more objects based, at least in part, on training data corresponding to two or more aspects of motion of the one or more objects.

Abstract: Surface imaging apparatuses, surface analysis apparatuses, methods based on detection of secondary electrons or secondary ions that include a spatially scanned and DC or pulsed primary excitation source resulting in secondary electrons or secondary ions which are detected and provide the modulated signal for imaging of the sample; and dual polarity flood beams to effect neutralization of surface charge and surface potential variation.

Abstract: Disclosed is a solution for quickly specifying an optical condition of a wafer to be inspected, and in particular, accelerating optical condition setting after obtaining a customer wafer.

Abstract: A beam injector may include a cathode emitter to emit electrons and an electrode to bias at least a portion of the electrons to remain on the cathode emitter and focus the emitted electrons into an electron beam. The beam injector may also include a resistor coupled between the cathode emitter and the electrode and configured to allow self-regulation of a voltage potential on the electrode based at least in part on a current of the electron beam.

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

Abstract: Embodiments of the present disclosure provide a grid structure. The grid structure includes a carrier and a support column; wherein the support column is located on the carrier, the support column has a top surface for supporting a sample; and the support column has a groove, the groove extends along a direction from the top surface to the carrier, and a groove wall of the groove is connected to the top surface.