Abstract: Disclosed herein is a module for supporting a device configured to manipulate charged particle paths in a charged particle apparatus, the module comprising: a support arrangement configured to support the device, wherein the device is configured to manipulate a charged particle path within the charged particle apparatus; and a support positioning system configured to move the support arrangement within the module; wherein the module is arranged to be field replaceable in the charged particle apparatus.

Abstract: When adjusting optical axes of a multi-beam charged particle beam device, because parameters of optical systems are inter-dependent, the time required to adjust the parameters increases. Thus, the present invention provides a charged particle beam device provided with an optical parameter setting unit for setting parameters of optical systems for emitting a plurality of primary charged particle beams to a sample, detectors for individually detecting a plurality of secondary charged particle beams discharged from the sample, a plurality of memories for storing signals detected by the detectors and converted into digital pixels in the form of images, evaluation value derivation units for deriving evaluation values of the primary charged particle beams from the images, and a GUI capable of displaying the images and receiving an input from a user, wherein the GUI displays the images and evaluation results based on the evaluation values and changes various optical parameters in real-time.

Abstract: There is provided a charged particle beam system having a computer system for controlling an acceleration voltage of a charged particle beam emitted from a charged particle source, the system including: a first diaphragm group having first and second diaphragms which are diaphragms that act on the charged particle beam and have different thicknesses; and a first diaphragm switching mechanism for switching the diaphragm in the first diaphragm group, in which the computer system controls the first diaphragm switching mechanism so as to switch from the first diaphragm to the second diaphragm according to an increase or decrease of the acceleration voltage.

Abstract: Provided is an electromagnetic field control member, the member including an insulating member made of a ceramic having a tubular shape and including a plurality of through holes extending in an axial direction; a conductive member that is made of a metal, seals off each of the through holes, and leaves an opening portion in the through hole, the opening portion opening to an outer periphery of the insulating member; and a power feed terminal connected to the conductive member. The through holes each include inner wall surfaces further including inclined surfaces for which a width between inner walls facing each other increases from an inner periphery of the insulating member to an outer periphery of the insulating member: and vertical surfaces that are located on an inner peripheral side of the insulating member and for which a width between inner walls facing each other is constant.

Abstract: Embodiments consistent with the disclosure herein include methods and a multi-beam apparatus configured to emit charged-particle beams for imaging a top and side of a structure of a sample, including: a deflector array including a first deflector and configured to receive a first charged-particle beam and a second charged-particle beam; a blocking plate configured to block one of the first charged-particle beam and the second charged-particle beam; and a controller having circuitry and configured to change the configuration of the apparatus to transition between a first mode and a second mode. In the first mode, the deflector array directs the second charged-particle beam to the top of the structure, and the blocking plate blocks the first charged-particle beam. And in the second mode, the first deflector deflects the first charged-particle beam to the side of the structure, and the blocking plate blocks the second charged-particle beam.

Abstract: A metrology tool for determining a parameter of interest of a structure fabricated on a substrate, the metrology tool comprising: an illumination optical system for illuminating the structure with illumination radiation under a non-zero angle of incidence; a detection optical system comprising a detection optical sensor and at least one lens for capturing a portion of illumination radiation scattered by the structure and transmitting the captured radiation towards the detection optical sensor, wherein the illumination optical system and the detection optical system do not share an optical element.

Abstract: Apparatuses, systems, and techniques to animate objects in computer-generated graphics. In at least one embodiment, one or more neural networks are trained to identify one or more forces to be applied to one or more objects based, at least in part, on training data corresponding to two or more aspects of motion of the one or more objects.

Abstract: Surface imaging apparatuses, surface analysis apparatuses, methods based on detection of secondary electrons or secondary ions that include a spatially scanned and DC or pulsed primary excitation source resulting in secondary electrons or secondary ions which are detected and provide the modulated signal for imaging of the sample; and dual polarity flood beams to effect neutralization of surface charge and surface potential variation.

Abstract: A beam injector may include a cathode emitter to emit electrons and an electrode to bias at least a portion of the electrons to remain on the cathode emitter and focus the emitted electrons into an electron beam. The beam injector may also include a resistor coupled between the cathode emitter and the electrode and configured to allow self-regulation of a voltage potential on the electrode based at least in part on a current of the electron beam.

Abstract: Disclosed is a solution for quickly specifying an optical condition of a wafer to be inspected, and in particular, accelerating optical condition setting after obtaining a customer wafer.

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

Abstract: Embodiments of the present disclosure provide a grid structure. The grid structure includes a carrier and a support column; wherein the support column is located on the carrier, the support column has a top surface for supporting a sample; and the support column has a groove, the groove extends along a direction from the top surface to the carrier, and a groove wall of the groove is connected to the top surface.

Abstract: The present disclosure is related to a Schottky thermal field emission (TFE) source for emitting an electron beam. Exemplary embodiments can provide the acquisition of high-resolution emission images of Schottky TFE source and compute usable beam current and brightness based on experimentally developed usable current criteria. Advantages of these exemplary embodiments include: (1) obtaining usable beam current and brightness of a Schottky TFE source can be important with reference to Schottky TFE development and quality inspection, and (2) optimizing Schottky TFE operation modes so as to maximize Schottky TFE usable beam current and brightness can enable operation of multi-beam electron optical tools.

Abstract: A method for electron microscopy comprises: adjusting at least one of an electron beam and an image beam in such a way that off-axial aberrations inflicted on at least one of the electron beam and the image beam are minimized, the adjusting performed by using a beam adjusting component to obtain at least one modified image beam, wherein the adjusting comprises applying both shifting and tilting to at least one of the electron beam and the image beam and wherein the amount of tilting of at least one of the electron beam and the image beam depends on the amount of shifting of at least one of the electron beam and the image beam respectively and wherein the amount of tilting is computed based on at least one of coma and astigmatism introduced as a consequence of the shift.

Abstract: Disclosed herein is an apparatus comprising: a source configured to emit charged particles, an optical system and a stage; wherein the stage is configured to support a sample thereon and configured to move the sample by a first distance in a first direction; wherein the optical system is configured to form probe spots on the sample with the charged particles; wherein the optical system is configured to move the probe spots by the first distance in the first direction and by a second distance in a second direction, simultaneously, while the stage moves the sample by the first distance in the first direction; wherein the optical system is configured to move the probe spots by the first distance less a width of one of the probe spots in an opposite direction of the first direction, after the stage moves the sample by the first distance in the first direction.

Abstract: The disclosure relates to a method of imaging a specimen using a transmission charged particle microscope, said method comprising providing a specimen, and providing a charged particle beam and directing said charged particle beam onto said specimen for generating a flux of charged particles transmitted through the specimen. The method comprises the step of generating and recording a first energy filtered flux of charged particles transmitted through the specimen, wherein said first energy filtered flux of charged particles substantially consists of non-scattered and elastically scattered charged particles. The method as disclosed herein comprises the further step of generating and recording a second energy filtered flux of charged particles transmitted through the specimen, wherein said second energy filtered flux of charged particles substantially consists of inelastically scattered charged particles.

Abstract: Systems and methods of observing a sample in a multi-beam apparatus are disclosed. The multi-beam apparatus may include an electron source configured to generate a primary electron beam, a pre-current limiting aperture array comprising a plurality of apertures and configured to form a plurality of beamlets from the primary electron beam, each of the plurality of beamlets having an associated beam current, a condenser lens configured to collimate each of the plurality of beamlets, a beam-limiting unit configured to modify the associated beam current of each of the plurality of beamlets, and a sector magnet unit configured to direct each of the plurality of beamlets to form a crossover within or at least near an objective lens that is configured to focus each of the plurality of beamlets onto a surface of the sample and to form a plurality of probe spots thereon.

Abstract: A charged particle beam apparatus includes a movement mechanism, a particle source, an optical element, a detector, and a control mechanism configured to control, based on an observation condition, the movement mechanism, the particle source, the optical element, and the detector. The control mechanism is configured to acquire a diffraction pattern image including a plurality of Kikuchi lines as a comparison image after inclining the movement mechanism by a first angle, evaluate an error between an inclination angle of the sample and a target inclination angle using a reference image of a reference diffraction pattern and the comparison image, and control inclination of the movement mechanism based on an evaluation result.

Abstract: A method utilizing cold welding to prepare grain boundaries having different included angles includes using a device including a support member. Two bent members are arranged opposite to each other in the support member. One ends of the two bent members are both fixedly connected to the support member, one end, away from the support member, of any bent member is fixedly connected to a first sample, one end, away from the support member, of the other bent member is fixedly connected to a second sample, and the first sample and the second sample are arranged corresponding to each other. The bent member includes a first metal sheet and a second metal sheet having different thermal expansion coefficients. An angle between the first sample and the second sample during butt welding can be controlled by changing an included angle of a bimetallic sheet.

Abstract: A method can include obtaining a first reference image of a first wafer. The method can include obtaining a first image of the first wafer in a fabrication state. The first wafer can have a first verification structure. The method can include obtaining, when the first wafer is in the fabrication state, a first physical measurement. The first physical measurement can correspond to the first verification structure. The method can include determining that the first image matches the first reference image. The method can include obtaining an electrical parameter measurement corresponding to a verification structure of a received wafer in a post-fabrication state. The method can include calculating a physical parameter value based on the electrical parameter measurement. The method can include generating a verification response by comparing the physical parameter value to the first physical measurement.

Abstract: A charged particle beam apparatus includes: a movement mechanism; a particle source; an optical element; a detector; and a control mechanism, in which the control mechanism acquires a diffraction pattern including a plurality of Kikuchi lines, calculates a crystal zone axis of the sample by performing analysis based on a plurality of intersections at which two Kikuchi lines included in the diffraction pattern intersect with each other, calculates an inclination angle of the sample based on the crystal zone axis and an irradiation direction of the charged particle beam, and controls the moving mechanism based on the inclination angle.

Abstract: A scanning electron microscope includes a spin detector configured to measure secondary electron spin polarization of secondary electrons emitted from the sample, and an analysis device configured to analyze secondary electron spin polarization data measured by the spin detector. The analysis device evaluates the strain in the sample by calculating a difference in the secondary electron spin polarization data of adjacent pixels.

Abstract: Disclosed herein are methods, apparatuses, systems, and computer-readable media related to defective pixel management in charged particle microscopy. For example, in some embodiments, a charged particle microscope support apparatus may include: first logic to identify a defective pixel region of a charged particle camera, wherein the charged particle camera cannot detect charged particle events in the defective pixel region; second logic to generate a first charged particle event indicator that identifies a first time and a first location of a first charged particle event outside the defective pixel region, wherein the first charged particle event is detected by the charged particle camera; third logic to generate a second charged particle event indicator that identifies a second time and a second location in the defective pixel region; and fourth logic to output data representative of the charged particle event indicators.

Abstract: A multidimensional printer makes a multidimensional structure from a liquid composition and includes: an energetic crosslinking particle source; a vacuum chamber that receives energetic crosslinking particles from the energetic crosslinking particle source; a membrane that transmits the energetic crosslinking particles; and a sample chamber that: receives a liquid composition that includes a solvent and polymers, the polymers including a cross-linkable moiety subjected to the energetic crosslinking particles such that portions of the polymers proximate to the cross-linkable moieties subjected to the energetic crosslinking particles crosslink to form a solid crosslinked polymer structure, wherein the membrane isolates a vacuum of the vacuum chamber from vapor of the liquid composition in the sample chamber.

Abstract: A transmission electron microscope includes a control unit that: determines an excitation amount of a second illumination system lens based on an excitation amount of first illumination system lens such that the second illumination system lens satisfies a first optical condition; and determines a control amount of a first deflector and a control amount of a second deflector based on the excitation amount of the second illumination system lens such that the first deflector and the second deflector satisfy a second optical condition. The first optical condition is for a convergence angle of the electron beam to be constant even if the excitation amount of the first illumination system lens has changed, and the second optical condition is for an illuminating position of the electron beam and an illuminating angle of the electron beam to be constant even if the excitation amount of the first illumination system lens has changed.

Abstract: A method of measuring a critical dimension (CD) includes forming a plurality of patterns in a substrate, creating first to n-th images, where n is a natural number greater than 1, for first to n-th areas in the substrate, respectively, where the first to n-th areas do not overlap with each other, where each of the first to n-th areas comprising at least some of the plurality of patterns, creating a merged image for the first to n-th images, and measuring a CD for a measurement object from the plurality of patterns using the merged image. The merged image has a higher resolution than each of the first to n-th images.

Abstract: A carrier grid with integrated gas delivery system for use in a charged particle beam system (CPB). The carrier grid has a body with an internal reservoir for storing a gas. A post extends from the body with an end for supporting a sample to be operated upon, and an outlet tip extends from the end of the post. A channel extends from the reservoir, through the post and ends in the outlet tip, where the outlet tip seals the stored gas in the body. Cutting the outlet tip near its base, with a focused ion beam (FIB) by example, will open the channel to the CPB chamber, allowing the prestored gas within the reservoir to escape. A FIB or electron beam directed at the junction of the sample positioned near the post will cause deposition and subsequent attachment of the sample to the post in presence of the gas.

Abstract: A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

Abstract: A semiconductor inspection device capable of detecting an abnormality with high sensitivity in a failure analysis of a fine-structured device is provided. An electron optical system radiates an electron beam to a sample on a sample stage. A measurement device measures an output from a measurement probe that is in contact with the sample. An information processing device starts and stops the radiation of the electron beam to the sample, sets a first measurement period in which the measurement device measures the output from the measurement probe during the radiation and a second measurement period in which the measurement device measures the output from the measurement probe after the radiation, and obtains the measurement value of the output from the measurement probe based on a difference between a first measurement value measured in the first measurement period and a second measurement value measured in the second measurement period.

Abstract: Systems and methods are provided for charged particle detection. The detection system can comprise a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements. The detection system can further comprise a beam spot processing module configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value.

Abstract: A metrology method for use in determining one or more parameters of a three-dimensional patterned structure, the method including performing a fitting procedure between measured TEM image data of the patterned structure and simulated TEM image data of the patterned structure, determining a measured Lamellae position of at least one measured TEM image in the TEM image data from a best fit condition between the measured and simulated data, and generating output data indicative of the simulated TEM image data corresponding to the best fit condition to thereby enable determination therefrom of the one or more parameters of the structure.

Abstract: A Schottky thermal field emitter (TFE) source integrated with a beam splitter by a standoff, which supports the beam splitter above the Schottky TFE extractor faceplate by a distance of 0.05 mm to 2 mm. The beam splitter includes a microhole array integrated with the standoff and being disposed opposite the extractor faceplate, the microhole array having a plurality of microholes that split the electron beam generated by the Schottky TFE into a plurality of beamlets. The support and extractor may be fabricated from the same material or from different materials. The support may be formed from a high temperature resistive material, which causes a potential difference between the extractor and the microhole array. This potential difference creates positively charged electrostatic lenses at the microholes, which increases current in the individual beamlets. Voltage on the microarray plate may be varied to achieve a high beamlet current.

Abstract: An analysis method includes: obtaining n×m pieces of map data by repeating, m times, a map measurement in which n pieces of map data are obtained by scanning a specimen with a primary probe to detect electrons emitted from the specimen with an electron spectrometer, while measurement energy ranges of an analyzer are varied; and generating a spectral map in which a position on the specimen is associated with a spectrum based on the n×m pieces of map data, the measurement energy ranges of m times of the map measurement not overlapping each other.

Abstract: Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not greater than a threshold dose rate, a diffraction image including the diffraction peak is generated by counting electron detection events. Values of pixels belonging to the diffraction peak are determined with a first set of counting parameter values corresponding to a first coincidence area. Values of pixels not belonging to any of the multiple diffraction peaks are determined using a second, set of counting parameter values corresponding to a second, different, coincidence area.

Abstract: A charged particle beam device including: a charged particle beam source which emits a charged particle beam; a blanking device which has an electrostatic deflector that deflects and blocks the charged particle beam; an irradiation optical system which irradiates a specimen with the charged particle beam; and a control unit which controls the electrostatic deflector, the control unit performing processing of: acquiring a target value of a dose of the charged particle beam for the specimen; setting a ratio A/B of a time A during which the charged particle beam is not blocked to a unit time B (where A?B, A?0), based on the target value; and operating the electrostatic deflector based on the ratio.

Abstract: An electromagnetic compound lens may be configured to focus a charged particle beam. The compound lens may include an electrostatic lens provided on a secondary optical axis and a magnetic lens also provided on the secondary optical axis. The magnetic lens may include a permanent magnet. A charged particle optical system may include a beam separator configured to separate a plurality of beamlets of a primary charged particle beam generated by a source along a primary optical axis from secondary beams of secondary charged particles. The system may include a secondary imaging system configured to focus the secondary beams onto a detector along the secondary optical axis. The secondary imaging system may include the compound lens.

Abstract: Disclosed herein is an apparatus comprising: a source of charged particles configured to emit a beam of charged particles along a primary beam axis of the apparatus; a condenser lens configured to cause the beam to concentrate around the primary beam axis; an aperture; a first multi-pole lens; a second multi-pole lens; wherein the first multi-pole lens is downstream with respect to the condenser lens and upstream with respect to the second multi-pole lens; wherein the second multi-pole lens is downstream with respect to the first multi-pole lens and upstream with respect to the aperture.

Abstract: Disclosed is a linear array ultra-fast scanning x-ray imaging device. The linear array x-ray imaging device is single photon sensitive, operating in frame output mode and including a pixel array Application Specific Integrated Circuit including the readout pixel array. The ASIC includes digital control logic and sufficient memory to accumulate digital output frames in various modes of operation prior to output from the ASIC, permitting advanced imaging functionalities directly on the ASIC, while maintaining a dynamic range of 16 bits and single photon sensitivity. The effective or secondary frames output from the pixel array ASIC can be tagged with user provided external triggers synchronizing the effective frames to the x-ray beam energy and/or to the movement of the x-ray source or imaged object. This enables dual energy imaging and ultra-fast scanning, without complex and costly conventional photon counting x-ray imaging sensors. The system architecture is simpler and higher performance.

Abstract: Provided is a method for virtually executing an operation of an energy dispersive x-ray spectrometry (EDS) system in real time production line by analyzing a defect included in a material undergoing inspection based on computer vision, the method including receiving a scanning electron microscope (SEM) image of the material including the defect, extracting an image-feature from the SEM image of the material, classifying the extracted image-feature under a predetermined label, predicting, based on the classified image-feature, an element associated with the defect included in the material and a shape of the predicted element, and grading the defect included in the material based on comparing the predicted element with a predetermined criteria.

Abstract: An aperture array for a multi-beam array system and a method of selecting a subset of a beam from a multi-beam array system are provided. The aperture array comprises an array body arranged proximate to a beam source. The array body comprises a plurality of apertures, at least two of the apertures having different geometries. The array body is movable, via an actuator, relative to an optical axis of the beam source, such that a subset of a beam from the beam source is selected based on the geometry of the aperture that is intersected by the optical axis.

Abstract: A scanning electron microscopy (SEM) system is disclosed. The SEM system includes an electron source configured to generate an electron beam and a set of electron optics configured to scan the electron beam across the sample and focus electrons scattered by the sample onto one or more imaging planes. The SEM system includes a first detector module positioned at the one or more imaging planes, wherein the first detector module includes a multipixel solid-state sensor configured to convert scattered particles, such as electrons and/or x-rays, from the sample into a set of equivalent signal charges. The multipixel solid-state sensor is connected to two or more Application Specific Integrated Circuits (ASICs) configured to process the set of signal charges from one or more pixels of the sensor.

Abstract: A charged particle beam apparatus acquires an image that is not affected by movement of a stage at a high speed. The apparatus includes: a charged particle source for irradiating a sample with a charged particle beam; a stage on which the sample is placed; a measurement unit for measuring a movement amount of the stage; a deflector; a deflector offset control unit, which is a feedback control unit for adjusting a deflection amount of the deflector according to the movement amount of the stage; a plurality of detectors for detecting secondary charged particles emitted from the sample by irradiation of the charged particle beam; a composition ratio calculation unit that calculates composition ratios of signals output from the detectors based on the deflection amount adjusted by the feedback control unit; and an image generation unit for generating a composite image by compositing the signals using the composition ratio.

Abstract: The disclosed apparatus may include support portions, a frame (such as a base) configured to maintain the support portions in a spaced-apart configuration, a sample holder configured to receive a sample, and a probe assembly including micromanipulators configured to position one or more probes in contact with the sample. The sample holder may rotate between the support portions, and the probe assembly may rotate with the sample holder so that the one or more probes may maintain contact with a sample in the sample holder as the sample holder is rotated, for example, to expose a portion of the sample for processing. Various other methods, systems, and computer-readable media are also disclosed.

Abstract: Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.

Abstract: Analyzing a buried layer on a sample includes milling a spot on the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along a sidewall of the spot. From a first perspective a first distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. From a second perspective a second distance is measured between the first point on the sidewall corresponding to the upper surface of the buried layer and the second point on the sidewall corresponding to the lower surface of the buried layer. A thickness of the buried layer is determined using the first distance and the second distance.

Abstract: A reference-standard device (20) for calibration of measurements of length, comprising a substrate (10) that includes a surface (10a) having at least one calibration pattern (11). According to the invention, this pattern comprises a plurality of nanometric structures (14), said nanometric structures (14) having one and the same section in the plane of said surface and having the same nanometric dimensions, in particular less than 50 nm, said nanometric structures (14) being arranged at a distance from one another by a constant pitch of nanometric length, in particular less than 50 nm, in at least one direction, said nanometric structures (14) being arranged within spatial regions (12) delimited in one or more directions in the plane of the substrate (10), said nanometric structures (14) being obtained via application to said substrate (10) of a process of nanostructuring (100) by means of a mask of block copolymers in order to make calibrations of measurements of length of the order of nanometres.

Abstract: To provide a magnetic domain image processing apparatus and a magnetic domain image processing method by which strain of an electromagnetic steel sheet can be evaluated in more detail.

Abstract: The invention relates to a device and method for determining a property of a sample that is to be used in a charged particle microscope. The sample comprises a specimen embedded within a matrix layer. The device comprises a light source arranged for directing a beam of light towards said sample, and a detector arranged for detecting light emitted from said sample in response to said beam of light being incident on said sample. Finally, the device comprises a controller that is connected to said detector and arranged for determining a property of said matrix layer based on signals received by said detector.

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.