Semiconducting Type Patents (Class 250/338.4)
  • Patent number: 11346659
    Abstract: A method for measuring the thickness of a specimen, according to an embodiment, can measure the thickness of a specimen having multiple layers in a contactless and non-destructive manner. In addition, when the refractive indexes of materials forming the respective layers are already known, the thicknesses of the respective layers can be integrally measured through differences in reflection times of terahertz waves with respect to the respective layers of the specimen, thereby measuring the thickness of the specimen, such that the time taken for measuring the thickness of the specimen can be reduced.
    Type: Grant
    Filed: March 1, 2021
    Date of Patent: May 31, 2022
    Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
    Inventors: Hak Sung Kim, Gyung Hwan Oh, Dong Woon Park
  • Patent number: 11340108
    Abstract: The use of silicon or vanadium oxide nanocomposite consisting of graphene deposited on top of an existing amorphous silicon or vanadium oxide microbolometer can result in a higher sensitivity IR detector. An IR bolometer type detector consisting of a thermally isolated nano-sized (<one micron feature size) electro-mechanical structure comprised of Si3N4, SiO2 thins films, suspended over a cavity with a copper thin film reflecting surface is described. On top of the suspended thin film is a nanostructure composite comprised of graphene monolayers, covered with various surface densities of VoXy or amorphous nanoparticles, followed by another graphene layer. The two conducting legs are connected to a readout integrated circuit (ROIC) fabricated on a CMOS wafer underneath. The nanostructure is fabricated after the completion of the ROIC process and is integrate able with the CMOS process.
    Type: Grant
    Filed: September 28, 2020
    Date of Patent: May 24, 2022
    Assignee: Magnolia Optical Technologies, Inc.
    Inventors: Elwood J. Egerton, Ashok K. Sood
  • Patent number: 11333978
    Abstract: An actinic ray-sensitive or radiation-sensitive resin composition for forming a pattern used as a mask in an ion implanting, including a resin including a repeating unit having an acid-decomposable group, a photoacid generator, and an additive having a melting point or glass transition temperature of lower than 25° C. and a molecular weight of 180 or more, in which a content of the additive is 1% by mass or more with respect to a total solid content in the composition.
    Type: Grant
    Filed: December 30, 2019
    Date of Patent: May 17, 2022
    Assignee: FUJIFILM Corporation
    Inventors: Kohei Higashi, Hideki Takakuwa
  • Patent number: 11307088
    Abstract: An optical tomography imaging system includes a signal generator, at least one light emitter, at least one light receiver, a signal processor, and an image processor. The signal generator is configured to generate a periodic signal and a reference signal. The light emitter is configured to be activated by the periodic signal to generate an optical signal passing through an object under test. The light receiver is configured to receive and convert the optical signal passing through the object under test into an electrical signal. The signal processor is configured to generate a comparison signal according to the electrical signal and the reference signal. The image processor is configured to acquire a plurality of disassembled sine waves from the comparison signal and generate a reconstructed image according to the disassembled sine waves.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: April 19, 2022
    Assignees: National Central University
    Inventors: Min-Chun Pan, Ya-Fen Hsu, Yan-Yang Hsu
  • Patent number: 11309347
    Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: April 19, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Wei Hsu, Tsai-Hao Hung, Chung-Yu Lin, Ying-Hsun Chen
  • Patent number: 11282887
    Abstract: A simultaneous dual-band image sensor having a plurality of pixels includes a substrate, a common ground on the substrate, wherein each pixel includes a Band 1 absorber layer on the common ground layer, a barrier layer on the Band 1 absorber layer, a Band 2 absorber layer on the barrier layer, a ring opening in the pixel formed by a removed portion of the Band 2 absorber layer, a removed portion of the barrier layer and a removed portion of the Band 1 absorber layer, wherein the ring opening does not extend through the Band 1 absorber layer, a first contact on a portion of the Band 2 absorber layer inside the ring, and a second contact on a portion of the Band 2 absorber layer outside the ring. The Band 1 absorber layer and the Band 2 absorber layer are n-type, or the Band 1 absorber layer and the Band 2 absorber layer are p-type.
    Type: Grant
    Filed: January 30, 2020
    Date of Patent: March 22, 2022
    Assignee: HRL Laboratories, LLC
    Inventors: Minh B. Nguyen, Brett Z. Nosho
  • Patent number: 11282970
    Abstract: An apparatus and method for a detector are disclosed. The apparatus disclosed contains a non-absorbing layer shaped as one or more pyramids, one or more collector regions, an absorber layer disposed between the one or more collector regions and the non-absorbing layer, a first electrical contact, and a second electrical contact, wherein the absorber layer is configured to absorb photons of incident light and generate minority electrical carriers and majority electrical carriers, wherein the one or more collector regions are electrically connected with the absorber layer and with the first electrical contact for extracting the minority electrical carriers, and the absorber layer is electrically connected with the one or more collector regions and with the second electrical contact to extract the majority electrical carriers.
    Type: Grant
    Filed: February 13, 2012
    Date of Patent: March 22, 2022
    Assignee: HRL Laboratories, LLC
    Inventors: Daniel Yap, Rajesh D. Rajavel, Sarabjit Mehta
  • Patent number: 11272619
    Abstract: An apparatus is provided which comprises: a cavity made in a substrate of a printed circuit board (PCB); a plurality of solder balls embedded in the cavity; and a horizontal trace within the substrate, wherein the horizontal trace is partially directly under the plurality of solder balls and is coupled to the plurality of solder balls and another trace or via in the substrate such that a substrate region under the plurality of solder balls is independent of a stop layer under the cavity.
    Type: Grant
    Filed: September 2, 2016
    Date of Patent: March 8, 2022
    Assignee: Intel Corporation
    Inventors: Kristof Darmawikarta, Robert A. May, Yikang Deng, Ji Yong Park, Maroun D. Moussallem, Amruthavalli P. Alur, Sri Ranga Sai Boyapati, Lilia May
  • Patent number: 11255724
    Abstract: A photodetecting device for detecting different wavelengths includes a first photodetecting component including a substrate and a second photodetecting component including second absorption region. The substrate includes a first absorption region configured to absorb photons having a first peak wavelength and to generate first photo-carriers. The second absorption region is supported by the substrate and configured to absorb photons having a second peak wavelength and to generate second photo-carriers. The first absorption region and the second absorption region are overlapped along a vertical direction.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: February 22, 2022
    Assignee: ARTILUX, INC.
    Inventors: Yen-Cheng Lu, Yun-Chung Na, Shu-Lu Chen, Chien-Yu Chen, Szu-Lin Cheng, Chung-Chih Lin, Yu-Hsuan Liu
  • Patent number: 11253157
    Abstract: A biological data measurement device according to the present invention includes a substrate disposed at a position spaced a predetermined distance from a body surface BS of a living organism as a measuring object via a support member so that an air layer is formed between the substrate and the body surface, in which the substrate is provided with a thermometer including an infrared thermometer for measuring a body surface temperature and a substrate thermometer for measuring a substrate temperature, thereby measuring a deep body temperature with higher accuracy.
    Type: Grant
    Filed: November 27, 2018
    Date of Patent: February 22, 2022
    Assignee: TECHNO-COMMONS INC.
    Inventors: Akio Tanaka, Chun Kit Chan, Kohei Higuchi
  • Patent number: 11251209
    Abstract: An infrared photo-detector array and a method for manufacturing it are disclosed. The infrared photo-detector array contains a plurality of pyramid-shaped structures, a first light-absorbing material supporting the plurality of the pyramid-shaped structure, a carrier-selective electronic barrier supporting the first light-absorbing material, a second light-absorbing material supporting the carrier-selective electronic barrier, and a metal reflector supporting the second light-absorbing material, wherein the plurality of the pyramid shaped structures are disposed on the side of the photo-detector array facing the incident light to be detected and the metal reflector is disposed on the opposite side of the photo-detector array. The method disclosed teaches how to manufacture the infrared photo-detector array.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: February 15, 2022
    Assignee: HRL Laboratories, LLC
    Inventors: Daniel Yap, Rajesh D. Rajavel, Sarabjit Mehta, Terence J. De Lyon, Hasan Sharifi, Pierre-Yves Delaunay
  • Patent number: 11227968
    Abstract: A process for fabricating a hybrid optical detector, includes the steps of: assembling, via an assembly layer, on the one hand an absorbing structure and on the other hand a read-out circuit, locally etching, through the absorbing structure, the assembly layer and the read-out circuit up to the contacts, so as to form electrical via-holes, depositing a protective layer on the walls of the via-holes, producing a doped region of a second doping type different from the first doping type by diffusing a dopant into the absorbing structure through the protective layer, the region extending annularly around the via-holes so as to form a diode, depositing a metallization layer on the walls of the via-holes allowing the doped region to be electrically connected to the contact.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: January 18, 2022
    Assignees: THALES, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Florian Le Goff, Jean-Luc Reverchon
  • Patent number: 11215510
    Abstract: In a thermal infrared detector having trench structures, at least one sensor element is provided between the trench structures, an etching hole through which the sensor element is hollowed out and thereby thermally insulated is provided in a substrate rear surface or on the periphery of a pixel area, and an opening portion is provided below the pixel area.
    Type: Grant
    Filed: November 8, 2016
    Date of Patent: January 4, 2022
    Assignee: Mitsubishi Electric Corporation
    Inventors: Satoi Kobayashi, Takaki Sugino, Takafumi Hara, Yuji Kawano
  • Patent number: 11211499
    Abstract: It is an object to provide a semiconductor device with less power consumption as a semiconductor device including a thin film transistor using an oxide semiconductor layer. It is an object to provide a semiconductor device with high reliability as a semiconductor device including a thin film transistor using an oxide semiconductor layer. In the semiconductor device, a gate electrode layer (a gate wiring layer) intersects with a wiring layer which is electrically connected to a source electrode layer or a drain electrode layer with an insulating layer which covers the oxide semiconductor layer of the thin film transistor and a gate insulating layer interposed therebetween. Accordingly, the parasitic capacitance formed by a stacked-layer structure of the gate electrode layer, the gate insulating layer, and the source or drain electrode layer can be reduced, so that low power consumption of the semiconductor device can be realized.
    Type: Grant
    Filed: May 8, 2018
    Date of Patent: December 28, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 11209317
    Abstract: Aspects and examples described herein provide a lightweight radiation shielding structure for infrared cameras. In one example, a top radiation shielding element and a bottom radiation shielding element are placed as close as possible to an infrared detector to minimize excess weight added to the infrared camera while providing optimal radiation shielding. Such aspects and examples provide important functionality for numerous weight-sensitive applications in high-radiation environments.
    Type: Grant
    Filed: September 18, 2019
    Date of Patent: December 28, 2021
    Assignee: RAYTHEON COMPANY
    Inventors: Stephen Marinsek, Thomas Sprafke
  • Patent number: 11172154
    Abstract: An image sensor for serial peripheral interface (SPI) slave circuit and a pixel array circuit therein are provided. The pixel array includes a plurality of pixel units disposed in an image sensor with the SPI slave circuit. Each pixel unit includes a photo sensor, N storages and at least one transmission circuit, wherein N is a positive integer greater than or equal to two. At least one of the N storages is coupled to the photo sensor, which are connected with each other in serial or parallel, and configured to store charges accumulated by the photo sensor at different exposures. Each transmission circuit is coupled to a corresponding storage, and is controlled by a corresponding transmission control signal to transmit the stored charge of the corresponding storage during a certain time period.
    Type: Grant
    Filed: October 8, 2020
    Date of Patent: November 9, 2021
    Assignee: Guangzhou Tyrafos Semiconductor Technologies Co.
    Inventors: Ping-Hung Yin, Jia-Shyang Wang
  • Patent number: 11162976
    Abstract: The invention is directed to an arrangement for detecting the intensity distribution of components of the electromagnetic field in beams of radiation. The object of the invention is met, according to the invention, in that a high-resolution two-dimensional intensity sensor array and a field vector detector array comprising different regions with individual detector structures for two transverse and longitudinal field vector components Ex, Ey, Ez are combined, wherein the detector structures are formed as nanostructures, metallic jacket-shaped tips with different apices, for utilization of localized plasmon resonance (LPR) of the individual detector structures and localized surface plasmons (LSP) excited through LPR for a polarization selection of the field distribution according to field vector components Ex, Ey, Ez and transmission thereof to associated sensor elements by means of surface plasmon polaritons (SPP) and wave guiding (WGM).
    Type: Grant
    Filed: August 2, 2019
    Date of Patent: November 2, 2021
    Inventor: Norik Janunts
  • Patent number: 11158754
    Abstract: A structure is disclosed. The structure contains a second detector disposed above a first detector, wherein the first detector contains a first absorber layer, a first barrier layer disposed above the first absorber layer, a first contact layer disposed above the first barrier layer, and wherein the second detector contains a second contact layer disposed above the first contact layer, a second barrier layer disposed above the second contact layer, a second absorber layer disposed above the second barrier layer.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: October 26, 2021
    Assignee: HRL Laboratories, LLC
    Inventors: Pierre-Yves Delaunay, Brett Z. Nosho, Hasan Sharifi
  • Patent number: 11133349
    Abstract: Disclosed are methods of fabricating short-wave infrared detector arrays including readout and absorption wafers connected by a recrystallized a-Si layer. The absorber wafer includes a SWIR conversion layer with a Ge1-xSnx alloy composition. Process steps realize the readout wafer and a portion of the absorption wafer, including bonding the readout wafer and a first portion of the absorption wafer. The a-Si intermediate layer linking the readout wafer and the first portion of the absorption wafer the a-Si intermediate layer is recrystallized by applying heat by a light source. The method assures a temperature profile between the light entrance surface and the CMOS electronic layer of the readout wafer maintaining readout layer temperature <350° C. during recrystallization. After the recrystallization process step the absorption wafer is completed by depositing the SWIR conversion layer. Also disclosed is a SWIR detector array realized by the method and SWIR detector array applications.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: September 28, 2021
    Assignee: IRIS INDUSTRIES SA
    Inventor: Claude Meylan
  • Patent number: 11118981
    Abstract: A metasurface integrated microbolometer having a sensing layer (e.g., SixGeyO1-x-y). The presence of the metasurface provides selectivity with respect to wavelength, polarization and angle-of-incidence. The presence of the metasurface into the microbolometer affects conversion of electromagnetic to thermal energy, thermal response, electrical integration of the microbolometer, and the tradeoff between resistivity and temperature coefficient of resistance, thereby allowing the ability to obtain a sensing with high temperature coefficient of resistance with lower resistivity values than that of films without the metasurface. The presence of the metasurface removes the need for a Fabry-Perot cavity.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: September 14, 2021
    Assignee: The Curators of the University of Missouri
    Inventors: Mahmoud Almasri, Edward Kinzel
  • Patent number: 11105078
    Abstract: A self-sealing drain vent cover that allows for a vacuum to be created within piping of a plumbing fixture for unclogging purposes. The vent cover includes a outer cover and a seal insert. The outer cover includes a first tubular body and a first disk top to yield a closed off structure to support the seal insert. The first disk top is terminally and perimetrically connected to the first tubular body. The seal insert adheres to a surface around an overflow port to enclose said port. The seal insert includes a second tubular body, a second disk top, and an annular self-sealing mechanism. The second disk top is terminally and perimetrically connected to the second tubular body. The seal insert is mounted within the outer cover. The self-sealing mechanism is positioned adjacent to a bottom end of the second tubular body and is concentrically mounted to the second tubular body.
    Type: Grant
    Filed: January 17, 2020
    Date of Patent: August 31, 2021
    Inventor: John McCauley
  • Patent number: 11099076
    Abstract: A thermo-mechanical resonating microbolometer has a graphene absorber suspended above a metallic silicon substrate to form a mechanical resonator. Microelectronic circuitry electrically connected to the graphene resonator and the metallic silicon substrate drives electronically the motion of the graphene absorber. Shifts in the mechanical resonant frequency of the graphene layer due to the absorption of incident radiation is measured electronically or using optical interferometry. A bolometer sensor array may be fabricated using such graphene microbolometer elements.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: August 24, 2021
    Assignee: University of Oregon
    Inventors: Benjamin J. Alemán, Andrew D. Blaikie, David J. Miller
  • Patent number: 11050952
    Abstract: A reading circuit for an infrared detector, includes: pixel driving circuits arranged in a matrix; vertical selection lines provided for respective rows of the pixel driving circuits; horizontal selection lines provided for respective columns of the pixel driving circuits; a vertical selection circuit configured to output a row selection signal to the vertical selection lines; and a horizontal selection circuit configured to output a column selection signal to the horizontal selection lines to read, to a reading line, a signal from pixel driving circuits for one row selected by the row selection signal, wherein each pixel driving circuit includes a driving circuit of the infrared detector, and a switching circuit configured to switch whether or not to input a test signal to the driving circuit, based on the row selection signal output to a corresponding vertical selection line and the column selection signal output to a corresponding horizontal selection line.
    Type: Grant
    Filed: October 11, 2019
    Date of Patent: June 29, 2021
    Assignee: FUJITSU LIMITED
    Inventor: Akira Sawada
  • Patent number: 11039521
    Abstract: A proximity sensor with a sliced integration time sensing mechanism and a sensing method thereof are provided. A light transmitter emits a sensing light toward a detected object during a first phase time. A light receiver receives a first light signal formed by the sensing light reflected by the detected object and an ambient light during the first phase time, and receives a second light signal of the ambient light during a second phase time. A first brightness of the first light signal is integrated over the first phase time to form a first integrated brightness value. A second brightness of the second light signal is integrated over the second phase time to form a second integrated brightness value. The light receiver subtracts the second integrated brightness value from the first integrated brightness value to obtain a first integrated brightness correction value by phase cancellation.
    Type: Grant
    Filed: March 30, 2020
    Date of Patent: June 15, 2021
    Assignee: ANPEC ELECTRONICS CORPORATION
    Inventors: Yi-Jung Huang, Jing-Min Chen, Chih-Ning Chen
  • Patent number: 11031432
    Abstract: Systems and methods are directed to vertical legs for an infrared detector. For example, an infrared imaging device may include a microbolometer array in which each microbolometer includes a bridge and a vertical leg structure that couples the bridge to a substrate such as a readout integrated circuit. The vertical leg structure may run along a path that is parallel to a plane defined by the bridge and may be oriented perpendicularly to the plane. The path may be disposed within, below, or above the plane defined by the bridge.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: June 8, 2021
    Assignee: FLIR Systems, Inc.
    Inventors: James L. Dale, Christopher Chan, Eric A. Kurth
  • Patent number: 10992895
    Abstract: Methods and systems for enabling an approximation of true snapshot integration by lowering total power requirements, total detector bias current, integrated charge per detector and detector impedance while allowing for higher ROIC input noise through the use of microbolometer photodetectors, super-pixels, and techniques for their use are herein provided.
    Type: Grant
    Filed: May 21, 2018
    Date of Patent: April 27, 2021
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Allen W Hairston, Daniel P Lacroix
  • Patent number: 10982997
    Abstract: A radiation sensor including a plurality of pixels formed in and on a semiconductor substrate, each pixel including a microboard suspended above the substrate by thermal insulation arms, the microboard including: a conversion element for converting incident electromagnetic radiation into thermal energy; and a passive optical shutter including a heat-sensitive layer covering one of the faces of the conversion element, the heat-sensitive layer having a reflection coefficient for the radiation to be detected that increases as a function of its temperature.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: April 20, 2021
    Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Sébastien Becker, Abdelkader Aliane, Denis Pelenc, Jean-Jacques Yon
  • Patent number: 10976195
    Abstract: A combination sensor may include a first infrared light sensor and a second infrared light sensor. The first infrared light sensor may be configured to sense light in a first wavelength within an infrared wavelength spectrum. The second infrared light sensor may be configured to sense light in a second wavelength that is different from the first wavelength within the infrared wavelength spectrum. The first infrared light sensor and the second infrared light sensor may be stacked in relation to each other.
    Type: Grant
    Filed: October 19, 2018
    Date of Patent: April 13, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Seok Leem, Gae Hwang Lee, Yong Wan Jin, Tae Yon Lee
  • Patent number: 10883804
    Abstract: We disclose herein an infra-red (IR) device comprising a substrate comprising an etched cavity portion and a substrate portion; a dielectric layer disposed on the substrate. The dielectric layer comprises a dielectric membrane which is adjacent, or directly above, or below the etched cavity portion of the substrate. The device further comprises a reflective layer on or in or above or below the dielectric membrane to enhance emission or absorption of infrared light at one or more wavelengths.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: January 5, 2021
    Assignee: AMS SENSORS UK LIMITED
    Inventors: Florin Udrea, Syed Zeeshan Ali, Richard Henry Hopper
  • Patent number: 10872999
    Abstract: An optoelectronic module includes first and second optical channels having respective active optoelectronic components. A transparent encapsulation is over the active optoelectronic components, and opaque encapsulation is on the transparent encapsulation. The opaque encapsulation has a first opening over a first active optoelectronic component and a second opening over a second optoelectronic component. The opaque encapsulation forms a ledge in an area of the second opening, and an optical assembly is disposed on the ledge within the second opening over the second optoelectronic component.
    Type: Grant
    Filed: February 17, 2017
    Date of Patent: December 22, 2020
    Assignee: ams Sensors Singapore Pte. Ltd.
    Inventors: Camilla Camarri, Mario Cesana, Hartmut Rudmann
  • Patent number: 10859442
    Abstract: The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.
    Type: Grant
    Filed: July 4, 2019
    Date of Patent: December 8, 2020
    Assignee: PIXART IMAGING INCORPORATION
    Inventors: Ming-Han Tsai, Shin-Lin Wang
  • Patent number: 10852194
    Abstract: A light detector includes: a substrate; and a membrane, in which the membrane includes a first wiring layer and a second wiring layer which are opposite each other with a gap extending along a line interposed therebetween, a resistance layer which is electrically connected to each of the first wiring layer and the second wiring layer and has an electric resistance depending on a temperature, a light absorption layer, and a separation layer which is disposed between each of the first wiring layer and the second wiring layer and the light absorption layer, and in which the light absorption layer includes a first region which spreads to the side opposite to the second wiring layer with respect to the first wiring layer and a second region which spreads to the side opposite to the first wiring layer with respect to the second wiring layer.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: December 1, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Masahiro Yamazaki, Katsumi Shibayama, Ryusuke Kitaura
  • Patent number: 10852193
    Abstract: An infrared sensor includes a supporting body having supporting body metal wiring that allows infrared rays to pass through. The supporting body is provided so as to cover one portion of an infrared detecting portion in a different plane spatially separated from that of the infrared detecting portion. The supporting body metal wiring disposed in an interior of the supporting body is such that one portion of a cobalt iron film is oxidized by a plasma discharge being carried out in an oxygen atmosphere. According to this kind of structure, infrared rays pass through the supporting body, and are absorbed by the infrared detecting portion, because of which there is no need to provide an infrared absorption layer in an upper layer of the supporting body.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: December 1, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Takaki Sugino, Shinichi Hosomi, Takafumi Hara
  • Patent number: 10854661
    Abstract: Provided is a solid-state imaging device that includes: a first pixel provided with a color filter layer having a transmission band in a visible light wavelength region on a light-receiving surface of a first light-receiving element; a second pixel provided with an infrared pass filter layer having a transmission band in an infrared wavelength region on a light-receiving surface of a second light-receiving element; an infrared cut filter layer that is provided on a position overlapping with the color filter layer and transmits light in the visible light wavelength region by blocking light in the infrared wavelength region; and a cured film provided in contact with the infrared cut filter layer.
    Type: Grant
    Filed: July 20, 2017
    Date of Patent: December 1, 2020
    Assignee: JSR CORPORATION
    Inventors: Kouji Hatakeyama, Tomohiro Takami, Mibuko Shimada
  • Patent number: 10852866
    Abstract: A display device includes a display panel and an infrared sensing module. The display panel includes an active region in which a pixel that emits light based on a data signal is disposed. The infrared sensing module transmits a first infrared light that passes through the active region and receives a second infrared light that passes through the active region to recognize an object. The wavelength of the first infrared light may have a wavelength greater than a predetermined value so that a luminance of light emitted by the pixel is not affected by operation of the infrared sensing module.
    Type: Grant
    Filed: October 4, 2017
    Date of Patent: December 1, 2020
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jinwoo Park, Hyunduck Cho, Wonkyu Kwak
  • Patent number: 10837837
    Abstract: A gas monitoring apparatus (10) identifies a target anesthetic or respiratory gas species and determines a concentration thereof. The gas monitor includes a multi-spectral mosaic filter and lens array (12), a composite thermal sensing focal plane array (26), and a signal processor (32). The mosaic filter and lens array (12) comprises a 2D array of lens structures (14) and long wave infrared (IR) band-pass filter elements (16) having a patterned thermally reflective metal disposition layer (18, 22) disposed on a first and/or second surface (20, 24) between adjacent lens structures and/or filter elements, respectively. The composite focal plane array (26) includes a plurality of individual thermal sensing focal plane arrays (28) with integrated read out integrated circuits (ROIC) that output a respective sensed channel data (36).
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: November 17, 2020
    Assignee: Koninklijke Philips N.V.
    Inventor: Szilveszter Cseh Jando
  • Patent number: 10816404
    Abstract: A method for contactlessly establishing a temperature of a surface includes determining the temperature measurement values of the plurality of blind pixels and determining temperature measurement values of the plurality of measurement pixels. The method further includes determining a temperature measurement value and a temperature measurement values by subtracting the temperature measurement value of the first blind pixel of the plurality of blind pixels from a temperature measurement value of a second blind pixel of the plurality of blind. The method further includes correcting the temperature measurement values by pixel-associated temperature drift components in each case, wherein the temperature drift components are determined using the temperature measurement value and/or the temperature measurement value.
    Type: Grant
    Filed: June 14, 2017
    Date of Patent: October 27, 2020
    Assignee: Robert Bosch GmbH
    Inventors: Michael Frank, Volkmar Senz, Michael Badeja, Axel Rumberg, Michael Krueger, Helge Dittmer
  • Patent number: 10812641
    Abstract: A terminal display assembly may include a display screen, a light-transmission cover plate and a seal ring. The display screen may define a through hole penetrating the display screen in a thickness direction of the display screen. The light-transmission cover plate may be disposed on the display screen and cover the through hole. The seal ring may be disposed on the light-transmission cover plate and located in the through hole.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: October 20, 2020
    Assignee: GUANGDONG OPPO MOBILE TELECOMMUNICATIONS CORP., LTD
    Inventor: Jiao Cheng
  • Patent number: 10797103
    Abstract: A method for producing a bolometric detector comprising producing a stack, on an interconnect level of a read-out circuit, comprising a sacrificial layer positioned between a carrier layer and an etch stop layer, the sacrificial layer comprising a mineral material; producing a conducting via passing through the stack such that it is in contact with a conducting portion of said interconnect level; depositing a conducting layer onto the carrier layer and the via; etching the conducting layer and the carrier layer, forming a bolometer membrane electrically connected to the via by a remaining portion of the conducting layer that covers an upper part of the via; and elimination of the sacrificial layer by selective chemical etching, and such that the membrane is suspended by the via.
    Type: Grant
    Filed: May 2, 2018
    Date of Patent: October 6, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Patrick Leduc, Sebastien Cortial, Stephane Pocas, Jean-Jacques Yon
  • Patent number: 10788364
    Abstract: The use of silicon or vanadium oxide nanocomposite consisting of graphene deposited on top of an existing amorphous silicon or vanadium oxide microbolometer can result in a higher sensitivity IR detector. An IR bolometer type detector consisting of a thermally isolated nano-sized (<one micron feature size) electro-mechanical structure comprised of Si3N4, SiO2 thins films, suspended over a cavity with a copper thin film reflecting surface is described. On top of the suspended thin film is a nanostructure composite comprised of graphene monolayers, covered with various surface densities of VoXy or amorphous nanoparticles, followed by another graphene layer. The two conducting legs are connected to a readout integrated circuit (ROIC) fabricated on a CMOS wafer underneath. The nanostructure is fabricated after the completion of the ROIC process and is integrate able with the CMOS process.
    Type: Grant
    Filed: July 8, 2019
    Date of Patent: September 29, 2020
    Assignee: Magnolia Optical Technologies, Inc.
    Inventors: Elwood J. Egerton, Ashok K. Sood
  • Patent number: 10788370
    Abstract: A thermal infrared sensor array in a wafer-level package includes at least one infrared-sensitive pixel produced using silicon micro mechanics, comprising a heat-isolating cavity in a silicon substrate surrounded by a silicon edge, and a thin membrane connected to the silicone edge by of thin beams. The cavity extends through the silicon substrate to the membrane, and there are slots between the membrane, the beams and the silicon edge. A plurality of infrared-sensitive individual pixels are arranged in lines or arrays and are designed in a CMOS stack in a dielectric layer, forming the membrane, and are arranged between at least one cover wafer which is designed in the form of a cap and has a cavity and a base wafer. The cover wafer, the silicon substrate and the base wafer are connected to one another in a vacuum-tight manner and enclosing a gas vacuum.
    Type: Grant
    Filed: November 28, 2016
    Date of Patent: September 29, 2020
    Assignee: HEIMANN SENSOR GMBH
    Inventors: Frank Herrmann, Christian Schmidt, Jörg Schieferdecker, Wilhelm Leneke, Bodo Forg, Marion Simon, Michael Schnorr
  • Patent number: 10739288
    Abstract: According to the present invention, oxidized and reduced regions of graphene can be accurately detected in a short time using a terahertz wave so as to measure the conductivity of graphene, and thus the time required to test the conductivity of graphene can be reduced. In addition, when an oxidized region exists in graphene, the oxidized region can be immediately reduced by irradiating an electromagnetic wave thereto so as to increase the conductivity of graphene and thus minimize the time required to restore graphene.
    Type: Grant
    Filed: October 19, 2018
    Date of Patent: August 11, 2020
    Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
    Inventors: Hak-Sung Kim, Sung-Hyeon Park, Do-Hyoung Kim
  • Patent number: 10720461
    Abstract: The present disclosure relates to a detector device (300) assisted by majority current (104, 105), comprising a semiconductor layer of a first conductivity type (106), at least two control regions of the first conductivity type (100, 115), at least one detection region of a second conductivity type (101, 116) opposite to the first conductivity type and a source (110) for generating a majority carrier current (104) associated with an electrical field, wherein it further comprises isolation means (103) formed in the semiconductor layer and located between said two control regions, for deflecting the first majority carrier current generated by the first source between said two control regions and, hence, increasing the length of the first majority current path, reducing the amplitude of said first majority carrier current and, therefore, reducing the power consumption of the detector device.
    Type: Grant
    Filed: January 12, 2017
    Date of Patent: July 21, 2020
    Assignee: Sony Depthsensing Solutions SA/NV
    Inventors: Kyriaki Korina Fotopoulou, Ward Van Der Tempel, Daniel Van Nieuwenhove
  • Patent number: 10690807
    Abstract: Disclosed is an environmental sensor apparatus in which a plurality of light shielding plates including an insertion space portion providing an insertion space of the circuit board and a guide portion guiding the insertion of the circuit board to the inner surface of the insertion space portion are stacked, and a circuit board is mounted inside a light shielding portion in which the plurality of light shielding plates are stacked.
    Type: Grant
    Filed: August 13, 2018
    Date of Patent: June 23, 2020
    Assignee: NEO MOBILE TECHNOLOGY INC.
    Inventor: JaeGu Baek
  • Patent number: 10672964
    Abstract: The disclosed embodiments relate to the design of a temperature sensor, which is integrated into a semiconductor chip. This temperature sensor comprises an electro-thermal filter (ETF) integrated onto the semiconductor chip, wherein the ETF comprises: a heater; a thermopile, and a heat-transmission medium that couples the heater to the thermopile, wherein the heat-transmission medium comprises a polysilicon layer sandwiched between silicon dioxide layers. It also comprises a measurement circuit that measures a transfer function through the ETF to determine a temperature reading for the temperature sensor.
    Type: Grant
    Filed: August 15, 2016
    Date of Patent: June 2, 2020
    Assignee: Oracle International Corporation
    Inventors: Saman Saeedi, Frankie Y. Liu, Yue Zhang, Suwen Yang
  • Patent number: 10622207
    Abstract: The present invention relates generally to semiconductor devices and more particularly, to a method of forming a replacement channel composed of a III-V compound semiconductor material in a doped layer of a III-V compound semiconductor substrate. The replacement channel may be formed by removing a portion of the doped layer located directly below a dummy gate stack that has been removed. A III-V compound semiconductor material may be grown in the removed the portion to form the replacement channel and a gate stack may be formed on the replacement channel.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: April 14, 2020
    Assignee: International Business Machines Corporation
    Inventors: Effendi Leobandung, Yanning Sun
  • Patent number: 10587824
    Abstract: An imaging method includes imaging a scene having a pulsed light source and associating a symbol with the light source. The image is enhanced by inserting a symbol into the image indicative of location of the pulsed light source in the scene. The symbol overlays the image in spatial registration with the location of the pulsed light source in the scene to augment indication of the location provided by the pulsed light source. Imaging systems are also described.
    Type: Grant
    Filed: August 8, 2017
    Date of Patent: March 10, 2020
    Assignee: Sensors Unlimited, Inc.
    Inventors: Curt Dvonch, Albert P. Allard
  • Patent number: 10580916
    Abstract: An infrared detector includes, a substrate, a lower contact layer formed on the substrate, a first light receiving layer that is formed on the lower contact layer and has a quantum well structure, an intermediate contact layer formed on the first light receiving layer, a second light receiving layer that is formed on the intermediate contact layer and has a quantum well structure, and an upper contact layer formed on the second light receiving layer. Each of the first light receiving layer and the second light receiving layer includes, a first semiconductor layer that is doped with a first conductivity-type impurity, and a second semiconductor layer that is formed on the first semiconductor layer, and is doped with a second conductivity-type impurity which compensates the first conductivity-type impurity.
    Type: Grant
    Filed: January 3, 2019
    Date of Patent: March 3, 2020
    Assignee: FUJITSU LIMITED
    Inventors: Shigekazu Okumura, Ryo Suzuki
  • Patent number: 10551246
    Abstract: We disclose an array of Infra-Red (IR) detectors comprising at least one dielectric membrane formed on a semiconductor substrate comprising an etched portion; at least two IR detectors, and at least one patterned layer formed within or on one or both sides of the said dielectric membrane for controlling the IR absorption of at least one of the IR detectors. The patterned layer comprises laterally spaced structures.
    Type: Grant
    Filed: January 28, 2016
    Date of Patent: February 4, 2020
    Assignee: AMS SENSORS UK LIMITED
    Inventors: Florin Udrea, Syed Zeeshan Ali, Richard Henry Hopper, Julian Gardner, Andrea De Luca
  • Patent number: RE48996
    Abstract: A current detection module capable of differentiating and quantifying contribution to a current signal generated by a sensor in response to stimulation by a certain target source from contributions from sources other than the target source (ambient sources) is disclosed. As long as the contribution from the target source comprises a pulsed signal, the module may synchronize itself to the pulse(s) so that there is a predetermined phase relationship between the pulse(s) and functions carried out by various stages of the module. The module may be re-used to also detect and quantify contributions from ambient sources by presenting these contributions to the module as pulses that trigger synchronization of the module. To that end, a detection system disclosed herein is based on the use of such current detection module and allows mode switching where, depending on the selected mode of operation, the module is configured to perform different measurements.
    Type: Grant
    Filed: May 9, 2018
    Date of Patent: March 29, 2022
    Assignee: Analog Devices, Inc.
    Inventors: Shrenik Deliwala, Steven J. Decker, Gregory T. Koker, Dan M. Weinberg