Abstract: An infrared detector including an array of detection bolometers each having a bolometric membrane suspended above a substrate, and associated with each bolometer: a detection branch, including the bolometer and a circuit performing a biasing according to a voltage set point, a compensation branch, including a compensation bolometer thermalized to the substrate, a circuit performing a biasing according to a voltage set point, an integrator for generating a voltage by integrating a difference between the currents flowing through said branches, a circuit generating a quantity depending on substrate temperature, including: a bolometer thermalized to the substrate, and a circuit for biasing the bolometer, and a circuit for generating the voltage set points according to said quantity. When the array is exposed to a uniform reference scene, the average of the differences between currents flowing through said branches is within the integrator dynamic range for a substrate temperature range from ?30° C.-90° C.

Abstract: The architecture, design and fabrication of array of suspended micro-elements with individual seals are described. Read out integrated circuit is integrated monolithically with the suspended elements for low parasitics and high signal to noise ratio detection of changes of their electrical resistance. Array of individually sealed, suspended micro-elements is combined with signal processing chip that contains nonvolatile memory with sensitivity calibration of all elements and interpolation between non-functional elements. When the micro-elements are infrared light absorbers, image analysis and recognition is embedded in the processing chip to form the infrared imaging solution for infrared cameras.

Abstract: A short light pulse generation device includes: a light pulse generation portion that has a quantum well structure and generates a light pulse; a frequency chirping portion that has a quantum well structure and chirps a frequency of the light pulse; a light branching portion that branches a chirped light pulse; and a group velocity dispersion portion that has a plurality of optical waveguides, on which each of a plurality of the light pulses branched in the light branching portion is incident, and produces a group velocity difference depending on a wavelength with respect to a plurality of branched light pulses, wherein light path lengths of the light pulses in a plurality of light paths before the light pulse is branched in the light branching portion and then incident on the plurality of optical waveguides of the group velocity dispersion portion are equal to each other.

Abstract: The electromagnetic radiation detection device includes, on a same substrate: at least one active detector of the electromagnetic radiation provided with a first element sensitive to said radiation, at least one reference detector including a second element sensitive to said electromagnetic radiation, and a lid provided with first reflective means reflecting the incident electromagnetic radiation, said lid covering without contact the second sensitive element and defining with the substrate a cavity having the reference detector housed therein. The lid is designed to improve the sensitivity of the detection device.

Abstract: A High-resolution Image Acquisition and Processing Instrument (HIAPI) performs at least five simultaneous measurements in a noninvasive fashion, namely: (a) determining the volume of a liquid sample in welh (or microtubes) containing liquid sample, (b) detection of precipitate, objects of artifacts within microliter plate wells, (c) classification of colored samples in microliter plate wells or microtubes; (dl determination of contaminant (e.g. wafer concentration}; (e) air bubbles; (f) problems with the actual plate. Remediation of contaminant is also possible.

Abstract: A system for short-range laser detection and ranging of targets can provides rapid three-dimensional, e.g., angle, angle, range, scans over a wide field-of-view. Except for the final transmit/receive lens, the disclosed LADAR system can be implemented in an all-fiber configuration. Such system is compact, low cost, robust to misalignment, and lends itself to eye-safe operation by making use of available pulsed 1550 nm fiber lasers and amplifier sources. The disclosed LADAR system incorporates many novel features that provide significant advantages compared to current LADAR systems. The disclosed system uses a monostatic fiber-based transmitter/receiver, a fiber beam scanner based on a laterally vibrating fiber, and a position sensor to monitor the transmitted beam position.

Abstract: An infrared sensing strip includes a substantially linear substrate board, a receiver diode, and a plurality of light emitting diodes (LEDs) linearly aligned along the linear substrate board. Each of the LEDs is operative to transmit in a different direction. The infrared sensing strip utilizes prismatic films arranged to refract light from each of the LEDs in different directions. In one embodiment, the receiver diode is positioned centrally on the linear substrate board, and includes at least four LEDs, with two of each being disposed on either side of the receiver diode. Four prismatic films each cover a respective one of the LEDs and are arranged to refract light from each respective LED in one of four different directions. The small scale of the infrared sensing strip enables various applications including a scroll control, volume control, a heart rate monitor and various transmit and receive features.

Abstract: An infrared sensor according to the present invention includes a semiconductor substrate, a thin-film pyroelectric element made of lead titanate zirconate and disposed on the semiconductor substrate, a coating film coating the pyroelectric element and having a topmost surface that forms a light receiving surface for infrared rays, and a cavity formed to a shape dug in from a top surface of the semiconductor substrate at a portion opposite to the pyroelectric element and thermally isolates the pyroelectric element from the semiconductor substrate.

Abstract: In accordance with particular embodiments, a method for packaging an incident radiation detector includes depositing an opaque solder resistant material on a first surface of a transparent lid substrate configured to cover at least one detector. The method also includes forming at least one cavity in the lid substrate. The method further includes forming a first portion of at least one hermetic seal ring on the opaque solder resistant material. The first portion of each hermetic seal ring surrounds a perimeter of a corresponding cavity in the lid substrate. The method also includes aligning the first portion of the at least one hermetic seal ring with a second portion of the at least one hermetic seal ring. The method additionally includes bonding the first portion of the at least one hermetic seal ring with the second portion of the at least one hermetic seal ring with solder.

Abstract: Optical devices that include one or more structures fabricated from polar-dielectric materials that exhibit surface phonon polaritons (SPhPs), where the SPhPs alter the optical properties of the structure. The optical properties lent to these structures by the SPhPs are altered by introducing charge carriers directly into the structures. The carriers can be introduced into these structures, and the carrier concentration thereby controlled, through optical pumping or the application of an appropriate electrical bias.

Abstract: The present invention relates to a quantum infrared sensor and a gas concentration meter using the same, the quantum infrared sensor having a small and simple device shape and also being capable of performing stable measurement against disturbance changes such as changes in the flow amount and the temperature of gas to be measured. The quantum infrared sensor includes a pair of quantum infrared sensor elements, a pair of optical filters and a holding frame. The pair of optical filters is provided closer to an infrared light source than is the pair of quantum infrared sensor elements. The pair of optical filters is configured to selectively transmit infrared rays in specific different wavelength ranges, respectively. The pair of optical filters is housed in an upper level of the holding frame and provided while facing the pair of quantum infrared sensor elements through a pair of through holes, respectively.

Abstract: Provided are a waveguide with which strain and defect caused by a manufacturing process or the like or caused in a semiconductor in an initial stage or during operation are suppressed so that improvement and stabilization of characteristics are expected, and a method of manufacturing the waveguide. A waveguide includes a first conductor layer and a second conductor layer that are composed of a negative dielectric constant medium having a negative real part of dielectric constant with respect to an electromagnetic wave in a waveguide mode, and a core layer that is in contact with and placed between the first conductor layer and the second conductor layer, and includes a semiconductor portion. The core layer including the semiconductor portion has a particular depressed and projected structure extending in an in-plane direction.

Abstract: [Object] To provide a terahertz emission microscope being capable of improving a detection accuracy of a terahertz electromagnetic wave, a photoconductive element and a lens used therefor, and a method of producing a device. [Solving Means] A photoconductive element includes a base material, electrodes and a film material. The base material has an incident surface on which a terahertz electromagnetic wave is incident, the terahertz electromagnetic wave generated by irradiating a device to be observed with a pulse laser generated from a light source. The electrodes are formed on the base material and detect the terahertz electromagnetic wave incident on the incident surface of the base material. The film material is formed on the incident surface of the base material, transmits the terahertz electromagnetic wave and reflects the pulse laser.

Abstract: An optical sensor includes a visible light sensor includes a visible light sensing transistor and an infrared light sensor includes an infrared light sensing transistor, wherein the visible light sensing transistor receives a first driving voltage through a first driving voltage line, the infrared light sensing transistor receives a second driving voltage through a second driving voltage line, and the visible light sensing transistor and the infrared light sensing transistor receive a reference voltage through a reference voltage line.

Abstract: A photodetector with a bandwidth-tuned cell structure is provided. The photodetector is fabricated from a semiconductor substrate that is heavily doped with a first dopant. A plurality of adjoining cavities is formed in the semiconductor substrate having shared cell walls. A semiconductor well is formed in each cavity, moderately doped with a second dopant opposite in polarity to the first dopant. A layer of oxide is grown overlying the semiconductor wells and an annealing process is performed. Then, metal pillars are formed that extend into each semiconductor well having a central axis aligned with an optical path. A first electrode is connected to the metal pillar of each cell, and a second electrode connected to the semiconductor substrate. The capacitance between the first and second electrodes decreases in response to forming an increased number of semiconductor wells with a reduced diameter, and forming metal pillars with a reduced diameter.

Abstract: An NDIR gas detector includes a photodetector for detecting a portion of stray visible light emitted from an incandescent lamp so as to generate an induced electrical signal, which is compared with a preset reference signal associated with a predetermined constant level of the stray visible light corresponding to a constant temperature of the lamp so as to obtain a level difference between the induced electrical signal and the reference signal. Electrical power supplied to the lamp is repeatedly regulated based on the level difference until the induced electrical signal and the reference signal have the same level, thereby stabilizing IR emission of the lamp in response to the lamp being kept at the constant temperature.

Abstract: Disclosed are devices and methods for enhancing the performance of photoconductive switches or photomixers used to generate or receive terahertz radiation. An interlaced electrode is used to minimize carrier transit times across an absorbing semiconductor photoconductor. This electrode is designed to support a plasmonic resonance such that coupling of the optical pump signal to the absorbing photoconductor is enhanced.

Abstract: A terahertz temporal and spatial resolution imaging system is provided. The system includes: a sample placing rack; a detection crystal, located on the exit side of the sample placing rack; a pump light generating device, for generating a pump light to irradiate the test sample; a terahertz light generating device, for generating a terahertz light to irradiate the test sample, irradiate the detection crystal after obtaining information about the test sample, and modulate an index ellipsoid of the detection crystal; a detection light generating device, for generating a detection light to irradiate the detection crystal to detect the index ellipsoid of the detection crystal, thereby indirectly obtaining the information about the test sample; and an imaging apparatus, located in an optical path after the detection light passes through the detection crystal, for collecting terahertz images of the test sample.

Abstract: A system and method for using near-infrared or short-wave infrared (SWIR) light sources for identification of counterfeit drugs may perform spectroscopy using a super-continuum laser to provide detection in a non-contact and non-destructive manner at stand-off or remote distances with minimal sample preparation. Also, near-infrared or SWIR light may penetrate through plastic containers and packaging, permitting on-line inspection and rapid scanning. The near-infrared or SWIR spectroscopy may also be used to detect illicit drugs and their chemical composition. Moreover, the spectroscopic techniques may also be applied to quality assessment and control in pharmaceutical manufacturing, thus permitting the implementation of smart manufacturing with feedback control. Fiber super-continuum lasers may emit light in the near-infrared or SWIR between approximately 1.4-1.8 microns, 2-2.5 microns, 1.4-2.4 microns, 1-1.8 microns.

Abstract: A control aperture for an IR sensor includes a die; an IR sensor disposed on the die and an IR opaque aperture layer on the die having an IR transmissive aperture aligned with the IR sensor for controlling the field of view and focus of the IR sensor.

Abstract: The system is comprised of at least one pair of light sources (1;2;3) that emit pulsed electromagnetic radiation in the near-infrared zone; at least one pair of light sources (1;2;3) that emit radiation in the near-ultraviolet zone; at least one photodetector (4) with the absorption band located in the near-infrared zone, for detecting the pulsed radiation transmitted and reflected on the biological element, on the basis of the pulsed radiation emitted by the pair of light sources that emit the radiation in the near-infrared; at least one photodetector (5) with the absorption band located in the near-ultraviolet zone, for detecting the pulsed radiation transmitted and reflected on the biological element, on the basis of the pulsed radiation emitted by the pair of light sources (1;2;3) that emit the radiation in the near-ultraviolet zone; a control unit (8(c)) that interprets the pulsed radiation transmitted and reflected on the biological element; and a processing unit (8(d)) that determines if it is a living

Abstract: A photoconductive element for performing at least one of generation and detection of terahertz radiation includes a photoconductive layer formed of a semiconductor material and configured to generate photoexcited carriers by being irradiated with excitation light, and a plurality of electrodes provided on the photoconductive layer. The material of the photoconductive layer is a material that makes a depletion layer produced in the photoconductive layer have a thickness smaller than an optical absorption length of the photoconductive layer for a wavelength of the excitation light. A film thickness of the photoconductive layer is adjusted so that the depletion layer is formed over an entirety in a direction of the film thickness within at least a portion of the photoconductive layer between the plurality of electrodes.

Abstract: Disclosed are a pixel, a pixel array, an image sensor including the same, and a method for operating the image sensor. Charges are eliminated from a first photoelectric conversion region of a photoelectric conversion section, and accumulated into the first photoelectric conversion region. Information about quantity of the charges of the first photoelectric conversion region is output, and charges are removed from a second photoelectric conversion region of the photoelectric conversion section. Accumulation of charges into the second photoelectric conversion region is started, and then information about quantity of the charges accumulated in the second photoelectric conversion region is output. Lights having wavelength bands different from each other are independently detected according to disclosed invention.

Abstract: An infrared detector capable of detecting an infrared spectrum having a wide bandwidth using a broadband light absorber. The infrared detector including a substrate, a light absorber disposed apart from the substrate at a distance, and a pair of thermal legs configured to support the light absorber such that the light absorber is spaced apart from the substrate by the distance. The light absorber includes at least one thermistor layer having a resistance value that varies according to temperature and at least two resonator layers disposed on at least one of upper and lower surfaces of the at least one thermistor layer.

Abstract: Methods and systems for electromagnetic detection are disclosed, including providing a high operating temperature quantum dot infrared photodetector comprising: a substrate; a bottom contacting layer atop the substrate; one or more active regions atop the bottom contacting layer; and a top contacting layer atop the one or more active regions; and exposing the high operating temperature quantum dot infrared photodetector to electromagnetic waves. Other embodiments are described and claimed.

Abstract: A semiconductor device includes a substrate having an electrode structure. An absorber structure is suspended over the electrode structure and spaced a first distance apart from the first electrode structure. The absorber structure includes i) suspension structures extending upwardly from the substrate and being electrically connected to readout conductors, and ii) a pillar structure extending downwardly from the absorber structure toward the first electrode structure. The pillar structure has a contact portion located a second distance apart from the first electrode structure, the second distance being less than the first distance. The absorber structure is configured to flex toward the substrate under a test condition. The second distance is selected such that the contact portion of the pillar structure is positioned in contact with the first electrode structure when the absorber structure is flexed in response to the test condition.

Abstract: According to a first aspect of the invention, the invention relates to a terahertz detection cell for detecting radiations having frequencies within a given spectral detection band, said cell comprising: a polar semi-conductor crystal structured such that it forms at least one slab of crystal, said crystal (330) having a Reststrahlen band covering said spectral detection band, and comprising at least one interface with a dielectric means; coupling means obtained by the slab structure (330), each slab forming an optical antenna, enabling the resonant coupling of an interface phonon polariton (IPhP) supported by said interface and an incident radiation having a frequency within the spectral detection band; and at least one first and one second connection terminal (301, 302) that are in electrical contact respectively with a first and a second end of the interface, said ends opposing each other, and said connection terminals to be connected to an electrical reading circuit for measuring the variation of the impe

Abstract: An apparatus for capturing an image includes a plurality of lens elements coaxially encompassed within a lens housing. A split-sub-pixel imaging chip includes an IR-pass filter coating applied on selected sub-pixels. The sub-pixels include a long exposure sub-pixel and a short-exposure sub-pixel for each of a plurality of green blue and red pixels.

Abstract: Methods and systems for electromagnetic detection are disclosed, including providing an optical antenna enhanced detector comprising: a micro photodetector, wherein the micro photodetector comprises: a substrate; a bottom contacting layer atop the substrate; one or more active regions atop the bottom contacting layer; and a top contacting layer atop the one or more active regions; and an optical antenna integrated with the micro photodetector, wherein the optical antenna is configured to concentrate incident electromagnetic waves onto the micro photodetector; and exposing the optical antenna enhanced detector to electromagnetic waves. Other embodiments are described and claimed.

Abstract: An optical element includes a semiconductor layer having an energy band gap larger than a photon energy of light, and a plurality of electrodes in electrical contact with the semiconductor layer. At least one of the electrodes forms a Schottky junction between the electrode and the semiconductor layer; the Schottky junction has a barrier height smaller than the photon energy of the light. At least part of a junction surface between the electrode that forms the Schottky junction and the semiconductor layer includes a light irradiation surface arranged to be irradiated with the light from a surface of the semiconductor layer without the electrodes, and a portion of a coupling structure arranged to be coupled to a terahertz wave that is generated or detected through the irradiation with the light.

Abstract: An infrared sensor includes a MOSFET sensor, and a current source MOSFET which is connected to the MOSFET sensor in series and constitutes a constant current source for driving the MOSFET sensor with a constant current, wherein a terminal between the MOSFET sensor and the current source MOSFET constitutes a sensor output terminal, the MOSFET sensor is disposed on a heat-insulated structure, the current source MOSFET is disposed outside the heat-insulated structure, and the MOSFET sensor and the current source MOSFET are constituted by a same conductivity type MOSFET and operate in a subthreshold region.

Abstract: An uncooled microbolometer detector that includes a substrate, a platform held above the substrate by a support structure, at least one thermistor provided on the platform, and an optical absorber. The optical absorber includes at least one electrically conductive layer extending on the platform over and in thermal contact with the at least one thermistor and patterned to form a resonant structure defining an absorption spectrum of the uncooled microbolometer detector. The optical absorber is exposed to electromagnetic radiation and absorbs the electromagnetic radiation according to the absorption spectrum. A microbolometer array including a plurality of uncooled microbolometer detectors arranged in a two-dimensional array is also provided. Advantageously, these embodiments allow extending the absorption spectrum of conventional infrared uncooled microbolometer detectors to the terahertz region of the electromagnetic spectrum.

Abstract: TeraHertz signal generation system based on traveling-wave oscillators providing extraction of orders of magnitude higher oscillation frequencies resulting in frequency multipliers and THz transceivers that can generate, transmit and sense THz frequency signals for sensing/imaging.

Abstract: A radiation sensor includes an integrated circuit radiation sensor chip (1A) including first (7) and second (8) thermopile junctions connected in series to form a thermopile (7,8) within a dielectric stack (3). The first thermopile junction (7) is insulated from a substrate (2) of the chip. A resistive heater (6) in the dielectric stack for heating the first thermopile junction is coupled to a calibration circuit (67) for calibrating responsivity of the thermopile (7,8). The calibration circuit causes a current flow in the heater and multiplies the current by a resulting voltage across the heater to determine power dissipation. A resulting thermoelectric voltage (Vout) of the thermopile (7,8) is divided by the power to provide the responsivity of the sensor.

Abstract: A single terahertz wave time-waveform measuring device 1 acquires information on an object to be measured 9 by using a terahertz wave, and includes a light source 11, a beam diameter adjuster 12, a separator 13, a terahertz wave generator 21, a light path length difference adjuster 31, a pulse front tilting unit 32, a polarizer 33, a wave synthesizer 41, an electro-optic crystal 42, an analyzer 43, and a photodetector 44. The terahertz wave generator 21 generates a pulse terahertz wave in response to an input of pump light and outputs the pulse terahertz wave. The pulse front tilting unit 32 makes pulse fronts of the terahertz wave and the probe light when being input into the electro-optic crystal 42 nonparallel to each other by tilting the pulse front of the probe light.

Abstract: An infrared imaging device, including: connection wiring portions arranged in matrix form on a substrate which is mounted in a package; first and second infrared detecting portions configured to convert intensity of absorbed infrared radiation into respective first and second signals, the second infrared detecting portion being smaller in thermal conductance than the first infrared detecting portion; and a lid member attached to the package so as to define an air-tight gap with the substrate, the connection wiring portions, the first and second infrared detecting portions being accommodated within the gap; wherein a degree-of-vacuum is measured within the gap and a warning issued based on the measured degree-of-vacuum.

Abstract: Systems and methods are directed to contacts for an infrared detector. For example, an infrared imaging device includes a substrate having a first metal layer and an infrared detector array coupled to the substrate via a plurality of contacts. Each contact includes for an embodiment a second metal layer formed on the first metal layer; a third metal layer formed on the second metal layer, wherein the third metal layer at least partially fills an inner portion of the contact; and a first passivation layer formed on the third metal layer.

Abstract: A radiation sensor (27) includes a radiation sensor chip (1) including first (7) and second (8) thermopile junctions connected to form a thermopile (7,8). The first thermopile junction is disposed in a floating portion of a dielectric membrane (3) thermally insulated from a silicon substrate (2) of the chip, and the second thermopile junction is disposed in the dielectric membrane directly adjacent to the substrate. Bump conductors (28) are bonded to corresponding bonding pads (28A) coupled to the thermopile (7,8) to physically and electrically connect the chip to conductors on a printed circuit board (23). The silicon substrate transmits infrared radiation to the thermopile while blocking visible light.

Abstract: A light detector includes a first light sensor and a second light sensor to detect incident light. A Ge film is disposed over the first light sensor to pass infra-red (IR) wavelength light and to block visible wavelength light. The Ge film does not cover the second light sensor.

Abstract: Disclosed herein are methods and mid-IR detection apparatus to measure analytes in gas or liquid phase. Solid state cooling of a crystalline lattice is effectively achieved with the controlled flow of charge carriers that absorb thermal energy from the semiconductor material which senses mid-IR photons. Reduction in temperature improves signal-to-noise ratios thus improving molecular sensitivity. In one embodiment the apparatus is used to detect a biomarker.

Abstract: A solid-state image capture device includes photoelectric conversion elements that perform photoelectric conversion on incident light to obtain signal charges, color filter portions provided at light incident sides of the corresponding photoelectric conversion elements, and an organic photoelectric conversion layer provided at light incident sides of the color filter portions. The organic photoelectric conversion layer contains a pigment that is absorptive of near infrared light.

Abstract: A photosensor device includes a plurality of first well structures, a light shielding layer, and a plurality of second well structures. The first well structures are disposed in a substrate. The light shielding layer disposed is on the substrate; it covers a portion of the first well structures and exposes the rest portion of the first well structures. The covered first well structures are adjacent to the exposed first well structures exposed. The exposed first well structures generate a first photocurrent according to incident light. The second well structures generate a second photocurrent according to incident light. A total surface area of the second well structures is substantially equal to a total surface area of the exposed first well structures. A method for determining the incident light is also provided.

Abstract: The present invention provides thermal detectors having an optical cavity that is optimized to couple light into a sensor. Light that is on resonance is coupled with the sensor with as high as 100% efficiency, while light off resonance is substantially reflected away. Light that strikes the sensor from the sides (i.e. not on the optical cavity axis) only interacts minimally with sensor because of the reduced absorption characteristics of the sensor. Narrowband sensors in accordance with the present invention can gain as much as 100% of the signal from one direction and spectral band, while receiving only a fraction of the normal radiation noise, which originates from all spectral bands and directions.

Abstract: Disclosed are devices and methods for enhancing the performance of photoconductive switches or photomixers used to generate or receive terahertz radiation. An interlaced electrode is used to minimize carrier transit times across an absorbing semiconductor photoconductor. This electrode is designed to support a plasmonic resonance such that coupling of the optical pump signal to the absorbing photoconductor is enhanced.

Abstract: A semiconductor device includes a substrate, suspension structures extending from the upper surface of the substrate, and an absorber stack attached to the substrate by the suspension structures. The suspension structures suspend the absorber stack over the substrate such that a gap is defined between the absorber stack and the substrate. The absorber stack includes a plurality of metallization layers interleaved with a plurality of insulating layers. At least one of the metallization layers has a thickness of approximately 10 nm or less.

Abstract: An image sensor is disclosed that includes a solid state semiconductor imager having a metallized catch pad, a collimator having a metallized layer that faces a sensor anode, the metallized layer joined with the metallized catch pad to form a metal bond between the solid state semiconductor imager and the collimator. Methods of making the joined solid state semiconductor imager and collimator assembly are also disclosed.

Abstract: 3D sensors, systems, and associated methods are provided. In one aspect, for example, a monolithic 3D sensor for detecting infrared and visible light can include a semiconductor substrate having a device surface, at least one visible light photodiode formed at the device surface and at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode. The device can further include a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation. In one aspect, the quantum efficiency enhanced infrared light region is a textured region located at the device surface.

Abstract: Various embodiments of an optical proximity sensor and corresponding circuits and methods for measuring small AC signal currents arising from the detection of pulsed AC light signals emitted by a light emitter and reflected from an object to detected in the presence of larger ambient light DC current signals are disclosed. Circuits and corresponding methods are described that improve the dynamic range, sensitivity and detection range of an optical proximity sensor by cancelling the contributions of DC current signals arising from ambient light signals that otherwise would dominate the detected small AC signal currents. The DC signal cancellation occurs in a differential amplifier circuit before small AC signal currents are provided to an analog-to-digital converter. The circuits and methods may be implemented using conventional CMOS design and manufacturing techniques and processes.

Abstract: An infrared detector 1 having a bolometer element 11 and a reference element 21 is provided with a bolometer thin film 22 supported on a surface of a substrate 10while spaced apart from the surface of the substrate 10, a metal film 23 for heat dissipation formed on a surface of the bolometer thin film 22 via an insulating film 31, wherein the surface of the bolometer thin film 22 faces the substrate 10, and a plurality of metal columns 25 connected thermally with the metal film 23 for heat dissipation and the substrate 10. Since heat generated from a photodetecting portion 22aby infrared rays is efficiently dissipated to the substrate 10 via the insulating film 31, the metal film 23 for heat dissipation, the metal columns 25, and a metal film 24 for heat dissipation on the side of the substrate, only temperature variation caused by variation in use environment can be measured accurately, and downsizing can be achieved while reducing the influence of temperature variation in use environment.

Abstract: An infrared detector system is described which includes a detector diode array 3 and a non volatile memory 1. The non volatile memory 1 can use CMOS Silicon Fuse technology which can be polysilicon devices that are programmed using voltage-current-time profiles suitable for the silicon process technology, such that when applied will cause the polysilicon element to heat up rapidly and melt. This results in the fuse element going open circuit, just like blowing a known fuse. The fuse can act as a logic element that has a one time, user programmable and permanent logic state. An array of such memory cells is can be mapped to a sub pixel diode detector array.