Abstract: An apparatus for detecting electromagnetic radiation within a target frequency range is provided. The apparatus includes a substrate and one or more resonator structures disposed on the substrate. The substrate can be a dielectric or semiconductor material. Each of the one or more resonator structures has at least one dimension that is less than the wavelength of target electromagnetic radiation within the target frequency range, and each of the resonator structures includes at least two conductive structures separated by a spacing. Charge carriers are induced in the substrate near the spacing when the resonator structures are exposed to the target electromagnetic radiation. A measure of the change in conductivity of the substrate due to the induced charge carriers provides an indication of the presence of the target electromagnetic radiation.

Abstract: According to an embodiment of the present disclosure, an apparatus of inspecting an overlapped substrate obtained by bonding substrates together is provided. The apparatus includes a first holding unit configured to hold and rotate the overlapped substrate, and a displacement gauge configured to measure displacements of peripheral sides of a first substrate and a second substrate constituting the overlapped substrate while rotating the overlapped substrate held by the first holding unit.

Abstract: An infrared ray detector comprises a prism element, a condenser lens, and an infrared ray receiving unit. The prism element is configured to convert the infrared ray irradiated from a detection area of a viewing field to the infrared ray proceeding toward the condenser lens. The condenser lens is configured to concentrate the infrared ray into the infrared ray receiving unit. The infrared ray receiving unit includes a plurality of the infrared ray detection elements. The infrared ray detection elements are arranged in an alternate fashion so as to output electrical signals of positive polarity and negative polarity. Consequently, the infrared ray detector is configured to detect the infrared ray irradiated from a plurality of the detection area, and is configured to detect the infrared ray on the basis of movement of the human in the detection area.

Abstract: An optical filtering structure comprising a stack of layers forming a first filter letting pass a first spectral band, and a second filter adjacent to the first filter and which lets pass a second spectral band comprising: a plurality of dielectric layers common to the two filters and of different refractive indices; n first metal layers common to the two filters; m second metal layers arranged only in the second filter; and wherein at least one of said dielectric layers comprises, in the first filter, a thickness different to that in the second filter, and/or wherein at least one dielectric layer is arranged only in the second filter; n being an integer greater than or equal to 0, and m being an integer greater than or equal to 1.

Abstract: Provided is an infrared image sensor for detecting infrared rays. The infrared image sensor includes a light-receiving unit including a pixel region in which a plurality of pixels are arranged and at least one reference pixel; a difference circuit for acquiring a first differential signal that is a differential signal between a signal of one pixel contained in the pixel region and a signal of the reference pixel and a second differential signal that is a differential signal between signals of two predetermined pixels out of the pixels contained in the pixel region; and a pixel signal calculating unit that calculates a signal of each of the pixels on the basis of the first differential signal and the second differential signal.

Abstract: An occupancy sensing electronic thermostat is described that includes a thermostat body, an electronic display that is viewable by a user in front of the thermostat, a passive infrared sensor for measuring infrared energy and an infrared energy directing element formed integrally with a front surface of the thermostat body. The passive infrared sensor may be positioned behind the infrared energy directing element such that infrared energy is directed thereonto by the infrared energy directing element. The thermostat may also include a temperature sensor and a microprocessor programmed to detect occupancy based on measurements from the passive infrared sensor.

Abstract: According to the embodiment of the present invention, an infrared sensor chip may be provided that includes: a CMOS circuit board comprised of an active matrix, a row line selector and an output multiplexer; and a bolometer which is stacked on the CMOS circuit board and is comprised of an active cell and a reference cell, wherein, for the purpose of a parametric test for the bolometer at a wafer or chip state, the row line selector selects a cell to which a voltage is applied in the bolometer, and wherein the output multiplexer outputs current characteristics according to the voltage application.

Abstract: This disclosure describes antenna elements, terahertz detector arrays formed by antenna elements, and dual-mode terahertz imaging systems that operate using terahertz detector array(s). The antenna element includes a horn receiver configured to collect radiation and capture the radiation using an antenna positioned in or proximate to a throat of the horn receiver. The antenna element also includes antenna posts electrically coupled to the antenna and extending through irises in a conducting ground plane and conductive traces electrically coupling the antenna posts to an antenna load. In addition, the antenna element includes a bolometer mounted on a first substrate, where the bolometer is electrically isolated from the antenna load and in thermal contact with the antenna load. The antenna could include a bow tie antenna having first and second arms on a first surface of a second substrate, where the ground plane is on a second surface of the second substrate.

Abstract: Methods of optimizing the diameters of nanowire photodiode light sensors. The method includes comparing the response of nanowire photodiode pixels having predetermined diameters with standard spectral response curves and determining the difference between the spectral response of the photodiode pixels and the standard spectral response curves. Also included are nanowire photodiode light sensors with optimized nanowire diameters and methods of scene reconstruction.

Abstract: A receiver chip for use in an imaging system includes a plurality of receiver dies, each of the receiver dies comprising one or more receiver circuits; a die interconnection layer located on top of the plurality of receiver dies; a quarter wave dielectric layer located on top of the die interconnection layer; and a plurality of antennae located on the quarter wave dielectric layer, each of the plurality of antennae corresponding to a respective receiver circuit, wherein the plurality of antennae are connected to the one or more receiver circuits through the quarter wave dielectric layer and the die interconnection layer by respective vias, such that a distance between a topmost layer of the die interconnection layer and the plurality of antennae is determined by a thickness of the quarter wave dielectric layer.

Abstract: Pixel-level monolithic optical element configurations for uncooled infrared detectors and focal plane arrays in which a monolithically integrated or fabricated optical element may be suspended over a microbolometer pixel membrane structure of an uncooled infrared detector element A monolithic optical element may be, for example, a polarizing or spectral filter element, an optically active filter element, or a microlens element that is structurally attached by an insulating interconnect to the existing metal interconnects such that the installation of the optical element substantially does not impact the thermal mass or thermal time constant of the microbolometer pixel structure, and such that it requires little if any additional device real estate area beyond the area originally consumed by the microbolometer pixel structure interconnects.

Abstract: The present invention provides a device for detecting foreign matter and a method for detecting foreign matter to detect a foreign matter on a surface of an object such as a film of an electrode mixture etc. or a foreign matter contained in the object, thereby to improve the reliability of the object. By irradiating an object with a terahertz illumination light 100 (wavelength of 4 ?m to 10 mm) and detecting a scattered light 660 from an electrode 10 as an example of the object by a scattered light detector 200, a foreign matter on a surface of the electrode 10 or contained in the electrode 10, for example, a metal foreign matter 720, is detected. The electrode 10 is one in which electrode mixture layers 700 each including an active material 701, conductive additive and a binder as components are coated on both surfaces of a collector 710. The scattered light 660 results from a part of a transmitted light 656 reflected by the metal foreign matter 720.

Abstract: An infrared detection sensor array according to the present invention is characterized by being provided with a substrate, at least one hole that passes through the substrate, a first infrared detection element provided to one side of the substrate and a second infrared detection element provided on the other side of the substrate so as to at least partially cover the hole.

Abstract: Disclosed herein is an interconnection apparatus and method using terahertz waves. The interconnection apparatus using terahertz waves according to the present invention includes a first terahertz wave generation unit for generating a first transmission terahertz wave, a center frequency of which is a first center frequency, using photomixing. A second terahertz wave generation unit generates a second transmission terahertz wave, a center frequency of which is a second center frequency different from the first center frequency. A first terahertz wave detection unit detects a first reception terahertz wave corresponding to the first transmission terahertz wave. A second terahertz wave detection unit detects a second reception terahertz wave corresponding to the second transmission terahertz wave.

Abstract: A bolometric array detector for detecting electromagnetic radiation in a predetermined range of infrared wavelengths includes a substrate; an array of bolometric micro-plates for detecting the radiation suspended above the substrate by support arms; and metallic reflectors formed on the substrate underneath the micro-plates to reflect that portion of the radiation which has passed through said micro-plates without being absorbed by the latter. For each micro-plate, a corresponding reflector includes a first part located underneath the micro-plate which extends as a second part not positioned underneath the micro-plate. At least the second part has surface texturing in a repeating pattern for coupling a portion of incident radiation on the second part to a guided wave that propagates towards the first part of the reflector positioned underneath micro-plate.

Abstract: An improved system for evaluating one or more components of a vehicle is provided. The system includes a set of imaging devices configured to acquire image data based on infrared emissions of at least one vehicle component of the vehicle as it moves through a field of view of at least one of the set of imaging devices. An imaging device in the set of imaging devices can include a linear array of photoconductor infrared detectors and a thermoelectric cooler for maintaining an operating temperature of the linear array of detectors at a target operating temperature. The infrared emissions can be within at least one of: the mid-wavelength infrared (MWIR) radiation spectrum or the long wavelength infrared (LWIR) radiation spectrum.

Abstract: A method detects a loss of calibration of a thermal imaging radiometer including an array of imaging microbolometers and a gauge microbolometer. The detection method includes applying a first and a second electrical stimulation to the gauge microbolometer to bring it to a first and a second predetermined temperature, followed by measuring an ohmic responsivity of the gauge microbolometer that is representative of a difference between the first and second electrical stimulations. The measured ohmic responsivity is compared with a reference ohmic responsivity, such that a loss of calibration is signaled whenever the measured and reference ohmic responsivities differ by more than a predetermined threshold. A correction method includes steps of the detection method, to yield a corrected voltage response function for each imaging microbolometer. Advantageously, the methods involve probing the electrical response of the gauge microbolometer without requiring thermoregulated blackbody calibrations sources.

Abstract: An infrared sensor device includes a plurality of infrared sensors that is provided in a plurality of divided areas in which an infrared-receiving area is radially divided in one plane; a detector that detects presence or absence of movement of an object in the infrared-receiving area for each of the divided areas based on an output of the infrared sensor; and a determiner that determines whether the object is in a detection area in a predetermined distance range from the infrared sensor, based on an arrangement pattern of the divided areas in which the movement of the object is detected, in an alignment of the divided areas in the infrared-receiving areas.

Abstract: An apparatus includes a first photodetector array including visible light photodetectors disposed in semiconductor material to detect visible light included in light incident upon the semiconductor material. The apparatus also includes a second photodetector array including time of flight (“TOF”) photodetectors disposed in the semiconductor material to capture TOF data from reflected light reflected from an object included in the light incident upon the semiconductor material. The reflected light reflected from the object is directed to the TOF photodetectors along an optical path through the visible light photodetectors and through a thickness of the semiconductor material. The visible light photodetectors of the first photodetector array are disposed in the semiconductor material along the optical path between the object and the TOF photodetectors of the second photodetector array.

Abstract: A detecting device includes at least one transmitter and plural receivers. After the at least one transmitter emits plural incident light beams to a detection zone, plural reflected light beams reflected from the detection zone are received by the plural receivers. If no object is moved within the detection zone, the plural reflected light beams strike a first part of the plural receivers, so that the plural receivers are in an initial reception configuration. If an object is moved within the detection zone, the plural reflected light beams are disturbed by the object and deflected to a second part of the plural receivers, so that the plural receivers are in a disturbed reception configuration. According to the reception configuration change, a moving direction of the object within the detection zone is determined. Consequently, the detecting range is largely enhanced, and the cost is reduced.

Abstract: An occupancy sensing electronic thermostat is described that includes a thermostat body having a curved exterior front surface, a dot matrix display mounted within the body viewable by a user in front of the front surface, a passive infrared sensor for measuring infrared energy and a shaped Fresnel lens having a smooth outer surface that extends across only a portion of the exterior front surface of the thermostat body. The Fresnel lens is shaped and curved so as to conform to and form a part of the curved exterior front surface of the thermostat body. A second downwardly directed passive infrared sensor can also be provided to aid in the detection of an approaching user who intends to interact with the thermostat.

Abstract: Various embodiments are directed to a proximity sensor apparatus. A light source may emit light that is conducted through multiple optical fibers, each having a source end and an emission end. The multiple optical fibers emit the light out the emission end and are arranged such that the emission ends form a grid. Multiple photoelectric sensors, each substantially co-located with each of the multiple optical fibers at the emission end are operative to detect emitted light that has been reflected back off an object. A processing component may be communicatively coupled with the multiple photoelectric sensors and receive signals from the multiple photoelectric sensors. The signals may be indicative of the detected emitted light that has been reflected back. The signals may be processed to determine a distance from the multiple photoelectric sensors to the object that reflected the emitted light.

Abstract: Detector for terahertz radiation with a micro-plasma cell (1) having a cavity (5) including a plasma in operation when applying a DC bias to the micro-plasma cell (1). Furthermore, the detector is provided with read-out electronics (20) connected to the micro-plasma cell (1). The read-out electronics measure changes of an electron density in the plasma in the micro-plasma cell (1) with respect to the DC bias provided electron density. The cavity (5) includes a gas composition near atmospheric pressure or higher, and the gas composition includes a Penning mixture.

Abstract: An infrared sensor, comprising at least one pixel comprising a first sensor and a second sensor, wherein the first and second sensors are dissimilar.

Abstract: A moving object detecting device includes a detecting device body that includes a detection unit formed in a chassis covering the inside of an apparatus and disposed to correspond to a monitoring window of which at least an aperture area or an aperture size is restricted and which monitors a moving object approaching the apparatus and a circuit board unit controlling a signal output from the detection unit and is disposed so that some optical axes among optical axes having detection surfaces of plural infrared detecting elements included in the detection unit, as focal points passes through the monitoring window and the other optical axes are blocked by the chassis, and an optical member that is formed in an inner wall of the chassis and that deflects the other optical axes of the infrared detection elements to pass through the monitoring window.

Abstract: Systems and methods are disclosed for the detection and identification of objects, wherein an illumination device emits polychromatic light in the infrared range, creating a light curtain, or an essentially two-dimensional area of light in the X and Z axis. The light from the light curtain and light reflected or transmitted by an object in the light curtain is imaged, via aperture-imaging optics, onto an aperture that is in the optical path and behind the aperture-imaging optics. The aperture is an elongated opening extending along the Z axis. A wavelength-dispersive device, such as a grating, diffracts light admitted by the aperture wavelength-dispersively in a diffraction direction along the Y axis. An image sensor detects the diffraction image and generates image signals which are analyzed to identify the materials comprising the object. An output signal may be generated in response to the material identified.

Abstract: A solid-state image sensor, comprises: a photoelectric conversion layer on which photoelectric conversion elements are arranged; and an wiring layer including at least one layer of a metal film, and an interlayer insulating film which fills a surrounding portion of the metal film, wherein the wiring layer is arranged at a position deeper than the photoelectric conversion layer on a side opposite to a light incidence side with respect to the photoelectric conversion layer, and at least a first metal film arranged at a position closest to the photoelectric conversion layer of the metal film of the wiring layer is arranged on a region which is not irradiated with light rays in a predetermined wavelength range, which light has passed through the photoelectric conversion layer.

Abstract: The electromagnetic radiation detection device includes, on a same substrate: at least one active detector of the electromagnetic radiation provided with a first element sensitive to said radiation, at least one reference detector including a second element sensitive to said electromagnetic radiation, and a lid provided with first reflective means reflecting the incident electromagnetic radiation, said lid covering without contact the second sensitive element and defining with the substrate a cavity having the reference detector housed therein. The lid is designed to improve the sensitivity of the detection device.

Abstract: An apparatus includes a first photodetector array including visible light photodetectors disposed in semiconductor material to detect visible light included in light incident upon the semiconductor material. The apparatus also includes a second photodetector array including time of flight (“TOF”) photodetectors disposed in the semiconductor material to capture TOF data from reflected light reflected from an object included in the light incident upon the semiconductor material. The reflected light reflected from the object is directed to the TOF photodetectors along an optical path through the visible light photodetectors and through a thickness of the semiconductor material. The visible light photodetectors of the first photodetector array are disposed in the semiconductor material along the optical path between the object and the TOF photodetectors of the second photodetector array.

Abstract: A 3D wafer-integration uncooled infrared (IR) microbolometer focal plane array (FPA) sensor includes a first die with an FPA of uncooled IR microbolometers, a second die signal-processing layer. The dies are vertically aligned, stacked with 3D wafer bonding, and interconnected. Interconnection include vertical electrical interconnects. Separate optimized manufacturing processes are used for die, so that additional processing costs of the FPA die are leveraged and 3D integration is completed at wafer level, minimizing total device cost and maximizing die count per wafer.

Abstract: A system includes a micro-optic array of pixel elements positioned to receive radiation from a flame. A mid-wave infrared (MWIR) detector is positioned to receive mid-wave infrared radiation from the micro-optic array. A filter is provided to pass mid-wave infrared radiation to the MWIR detector. A controller is provided to sequentially select different sets of pixel elements of the micro-optic array to provide mid-wave infrared radiation to the MWIR detector representative of the flame.

Abstract: An embodiment of the invention provides a cleaning robot including a light detector and a controller. The light detector detects a light beam. The controller is coupled to the light detector to control the cleaning robot. When the controller determines that the light beam is being output by a charging station, the controller controls the cleaning robot to move to the charging station along a first boundary of the light beam, which is substantially perpendicular to the charging station.

Abstract: A management device that includes an acquiring component and a numericalizetion component is provided. The acquiring component acquires correlation information that correlates with a degree of deterioration of a radiation detection component from plurality of imaging devices, each of the plurality of imaging devices comprising a radiation detection component that detects radiation that has passed through respective investigation subjects, and each of the plurality of imaging devices performing image capture by generating image data representing a radiographic image according to the amount of radiation detected by the radiation detection component, and storing the image data in a predetermined storage region. The numericalization component numericalizes the degree of deterioration of each of the respective radiation detection components of the plurality of imaging devices based on the correlation information acquired by the acquiring component.

Abstract: The thermoelectric detector comprises an infrared absorber pixel structure supported by two electrically connected beams made of a thermoelectric material. One end of the thermoelectric beam connects to the infrared absorber pixel structure; the other end connects to the substrate. The detector comprises a microlens for collecting and focusing infrared radiation on the detector. Infrared radiation is incident on the infrared absorber pixel structure results in a temperature gradient along the length of the thermoelectric legs, and generating an electrical voltage proportional to the gradient. A low noise SIGe BiCMOS readout integrated circuit is coupled to the detector to provide a background limited detector having improved detectivity.

Abstract: Detection of a breach in security of an enclosure, such as a shipping enclosure, is indicated by detection of a change in a closed status. A detector enclosure is provided with a window opening in the detector enclosure. A reference body having an image slit is accessible from within the detector enclosure, and a radiation detector is used to alternately receive radiation through the window opening in the detector and from the reference body through the image slit. An indication of the two received radiation levels or a difference between the received radiation levels is used to provide an indication of a change in the closed status of the enclosure.

Abstract: An apparatus and method for reducing nonlinearity artifacts in an IR imaging system applies a non-linear correcting function to signals received from a microbolometer. The non-linear correcting function can be a second-order polynomial, a third-order polynomial, some other formula, or a table from which corrections can be interpolated. In embodiments, the correcting function is automatically adjusted according to an ambient temperature measurement, to which a non-linear correction can be applied, either in a separate step or as an adjustment to the correcting function applied to the microbolometer signals.

Abstract: A method of inspecting a ceramic wall-flow filter (1) for a vehicle exhaust system includes the steps of: a) providing a source (9) of heat energy suitable for heating material within the filter (1); b) applying heat energy from the source (9) to a first end (10) of the filter (1) to heat material within the filter; c) detecting infrared radiation (18) which has been emitted by heated material in the filter using a radiation detector (19) at the second end (11) of the filter (1) to form an image (24) of a pattern of emitted radiation, the pattern of emitted radiation providing an indication of the condition of the filter (1). Another aspect of the invention provides apparatus for use in the method.

Abstract: The invention provides a sensor including a first sensor element formed in a first substrate and at least one optical element formed in a second substrate, the first and second substrates being configured relative to one another such that the second substrate forms a cap over the first sensor element, the at least one optical element being configured to guide incident radiation on the cap to the first sensor element. The sensor also includes a reference sensor element whose output can be used to reference the output of the first sensor element.

Abstract: A system and a method for calibrating an ambient light sensor (ALS) are disclosed. The ALS, an adjustable resistor and a switch are located on a first surface of a printed circuit board (PCB), and the adjustable resistor and the switch are connected in series between an adjustable probe of the ALS and the ground. A resistor is connected between two pads located on a second surface of the PCB via two probes touching the pads. A controller connected to the PCB reads a light sensitivity of the ALS and calculates a calculated resistance value of the adjustable resistor by a formula “detected light sensitivity/resistance value of the resistor=objective light sensitivity/resistance value of the adjustable resistor”, wherein the objective light sensitivity and the resistance value of the resistor are given.

Abstract: An infrared light detecting device and the infrared detecting method thereof. The device comprises a shield, a first photo detector and a second photo detector. The shield for blocking light is located above the first photo detector and the second photo detector. An opening is disposed on the shield above the first photo detector. In addition, there is a gap arranged between the first photo detector and the second photo detector. The first photo detector can detect the light passing through the opening to generate a photo sensing signal and couple an infrared light signal in the photo sensing signal to the second photo detector in order to output the infrared light signal.

Abstract: A photoconductive antenna is adapted to generate terahertz waves when irradiated by pulsed light. The photoconductive antenna includes first and second conductive layers, a semiconductor layer, and first and second electrodes. The semiconductor layer is made of a semiconductor material having a carrier density that is lower than a carrier density of the semiconductor material of the first conductive layer or the second conductive layer. The first and second electrodes are electrically connected to the first and second conductive layers, respectively. The semiconductor layer includes an incidence surface through which the pulsed light enters the semiconductor layer, and an emission surface from which the terahertz waves are emitted. The incidence surface is positioned in a side surface of the semiconductor layer having a normal direction extending orthogonal to a lamination direction, and the emission surface is positioned in the side surface at a position different from the incidence surface.

Abstract: A bolometer including: at least one electromechanical microsystem or nanosystem, the microsystem or nanosystem including a support and a mobile mass hung from beams above the support, the mobile mass forming an absorber of optical flux; actuation electrodes configured to set the mobile mass in vibration and arranged laterally relative to the mobile mass; and detection electrodes to detect variation in vibration frequency of the mobile mass arranged laterally relative to the mobile mass.

Abstract: A bolometric detector of a terahertz radiation, including: an assembly reflective for said electromagnetic radiation; at least one bolometric microbridge suspended above the reflective assembly and including a first bowtie antenna, a resistive load coupled with said antenna, and a thermometric element coupled with the resistive load. The reflective assembly includes: a reflective layer; an insulating layer on the reflective layer; a periodic array of metallic patterns on the insulating layer, the thickness and the dielectric permittivity of the insulating layer, and the pitch and the filling factor of the array being selected to obtain a constructive interference at the level of said microbridge.

Abstract: A bolometric detector of a terahertz electromagnetic radiation, including at least one bolometric microbridge suspended above a support. The microbridge includes: radiation collection means for collecting the electromagnetic radiation, including at least one pair of antennas; resistive means resistively coupled with the collection means, including an individual resistive load resistively coupled with each antenna; thermometric means, thermally coupled with the resistive means, electrically insulated from the collection means and the resistive means.

Abstract: A terahertz continuous wave system in accordance with the inventive concept may include a terahertz wave generator generating a terahertz continuous wave; a non-destructive detector measuring a change of the terahertz continuous wave by emitting the generated terahertz continuous wave to a sample and controlling a focal point of the emitted terahertz continuous wave while two-dimensionally moving the sample at predetermined intervals; and a three-dimensional image processor obtaining a three-dimensional image using two-dimensional images corresponding to the measured terahertz continuous wave.

Abstract: A displacement detecting apparatus, comprising: a first detecting module, for detecting displacement for an object on a detecting surface of the displacement detecting apparatus to generate first location information, and for generating a first control signal according to the first location information; a second detecting module, for detecting a target, and for detecting second location information for the displacement detecting apparatus relative to the target, and for generating a second control signal according to the second location information; and a switch apparatus, for selectively outputting at least one of the first control signal and the second control signal.

Abstract: A radiation sensor (10) comprises plural radiation sensing elements (1) arranged along an arrangement line, a lens having an optical axis focusing radiation towards the sensing elements, and circuitry (2) receiving the electric signal of the sensing elements and providing an output signal. The midpoint of the arrangement line may be offset against the optical axis of the converging section (5). At least some of the sensing elements may have different sizes. At least some of the sensing elements may have different relative sensitivity compared to each other. Two or more pairs of adjacent sensing elements may have a different pitch.

Abstract: For examining objects, in particular for inspecting persons for suspicious items, devices having a scanning system for scanning the object and having an evaluating system are known. An optical marking system is provided, which indicates the position of an item classified as suspicious on the object itself or in a mirror image of the object by means of visible light.

Abstract: A photosensor-equipped display device is provided having a combination of visible and non-visible light sources where a voltage drop is minimized when the non-visible light sources are turned on. The display device includes: a plurality of infrared LEDs (3b); photosensors (9) provided in a pixel region (4) for detecting reflected light originating from the infrared LEDs (3b); a sensor row driver circuit (7) configured to supply a sensor drive signal to the photosensors (9); an amplifier circuit (6) configured to amplify a signal read from the photosensors (9) in response to the sensor drive signal and output a photosensor signal; a signal processing circuit (20) configured to process the photosensor signal output from the amplifier circuit (6); and a backlight control circuit (13) configured to control on and off of the infrared LEDs (3b). The plurality of photosensors (9) are divided into a plurality of sensor groups in the pixel region (4).

Abstract: An apparatus for detecting durability of a wiper blade, may include an optical sensor including a light emitting unit radiating an infrared ray to a windshield glass and a light receiving unit receiving the infrared ray reflected through the windshield glass, wherein the wiper blade may be positioned between the light emitting unit and light receiving unit, and a controller comparing an infrared receiving quantity of the windshield glass transferred from the light receiving unit with a reference receiving quantity to determine an exchange time of the wiper blade.