Of Material Other Than Germanium, Diamond, Or Silicon Patents (Class 250/370.12)
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Patent number: 11971350Abstract: The invention relates to a method for THz measuring a measurement object (3), including at least the following steps: phase or a pre-measurement, in which e.g.Type: GrantFiled: April 18, 2019Date of Patent: April 30, 2024Assignee: 1NOEX GMBH INNOVATIONEN UND AUSRÜSTUNGEN FÜR DIE EXTRUSIONSTECHNIKInventor: Ralph Klose
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Patent number: 11398714Abstract: A wireless communication device includes a quantum cascade laser (QCL) configured to generate a terahertz (THz) or microwave carrier signal. The QCL includes a laser waveguide, a laser optical gain medium incorporated in the laser waveguide, and at least one electrode. An antenna may be integrated with the electrode. The device may be a transmitter, the electrode configured to receive an input baseband signal, the QCL configured to couple the THz or microwave carrier signal and the input baseband signal into a THz or microwave communication signal, and the antenna configured to transmit the THz or microwave communication signal. The device may be a receiver, the antenna configured to receive a THz or microwave communication signal, and the QCL configured to de-couple the THz or microwave communication signal from the THz or microwave carrier signal into an output baseband signal.Type: GrantFiled: December 20, 2018Date of Patent: July 26, 2022Assignee: PRESIDENT AND FELLOWS OF HARVARD COLLEGEInventors: Marco Piccardo, Dmitry Kazakov, Federico Capasso, Paul Chevalier
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Patent number: 11205675Abstract: The present disclosure provides an electronic device, including a thin film camera. The thin film camera includes an image processor arranged in the electronic device, and a film structure disposed to an outer surface of the electronic device. The film structure is configured for processing incident lights by a photosensitive array to capture an image, and the image processor is in communication with the film structure.Type: GrantFiled: August 2, 2019Date of Patent: December 21, 2021Assignee: SHENZHEN HEYTAP TECHNOLOGY CORP., LTD.Inventor: Yuhu Jia
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Patent number: 10944232Abstract: A frequency electromagnetic radiation generation system including: a non linear crystal producing THz frequency electromagnetic radiation; a fundamental beam that interacts with the non linear crystal thereby emitting a THz frequency electromagnetic radiation emission; a silicon intermediary coupled to the non linear crystal for output channeling the THz frequency electromagnetic radiation emission to an output environment; the system utilising a fundamental beam which has a photon energy below the bandgap energy of silicon.Type: GrantFiled: March 23, 2018Date of Patent: March 9, 2021Assignee: Macquarie UniversityInventors: Andrew Lee, Helen M. Pask, David James Spence
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Patent number: 10937921Abstract: This invention relates to a method to manufacture a chip to detect the direct conversion of X-rays. It also relates to a direct conversion detector for X-rays using such a chip and dental radiology equipment using at least one such detector. The method to manufacture the wafer comprises a step for applying pressure (3, 4, 4 a) to a powdered polycrystalline semiconductor material and a step for heating (5-9) during a set time period. It comprises a preliminary step for providing an impurity level of at least 0.2% in the polycrystalline semiconductor material.Type: GrantFiled: June 21, 2012Date of Patent: March 2, 2021Assignee: TROPHYInventors: Dominique Biava, Mathieu Rault, Jean-Marc Inglese, Sylvie Bothorel, Didier Gourier, Laurent Binet, Philippe Barboux, Jean-Pierre Ponpon
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Patent number: 10868202Abstract: Provided is a field shaping multi-well detector and method of fabrication thereof. The detector is configured by depositing a pixel electrode on a substrate, depositing a first dielectric layer, depositing a first conductive grid electrode layer on the first dielectric layer, depositing a second dielectric layer on the first conductive grid electrode layer, depositing a second conductive grid electrode layer on the second dielectric layer, depositing a third dielectric layer on the second conductive grid electrode layer, depositing an etch mask on the third dielectric layer. Two pillars are formed by etching the third dielectric layer, the second conductive grid electrode layer, the second dielectric layer, the first conductive grid electrode layer, and the first dielectric layer. A well between the two pillars is formed by etching to the pixel electrode, without etching the pixel electrode, and the well is filled with a-Se.Type: GrantFiled: April 10, 2020Date of Patent: December 15, 2020Assignee: The Research Foundation for The State University of New YorkInventors: Amirhossein Goldan, Wei Zhao
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Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system
Patent number: 10516068Abstract: Various technologies pertaining to formation or treatment of a thallium bromide crystal to improve the operable lifespan of a device that incorporates the thallium bromide crystal are described herein. In exemplary embodiments, treatments including focused ion beam implantation, selective material removal, and buffer layer application are performed on a thallium bromide crystal to inhibit motion of dislocations toward a region at which an electrical contact is desirably installed. In other exemplary embodiments, a thallium bromide crystal is doped with impurities during formation that inhibit the motion of dislocations in the crystal. In still other exemplary embodiments, a thallium bromide crystal is formed by way of processes that inhibit dislocation formation during crystal growth or eliminate dislocations in an existing thallium bromide mass.Type: GrantFiled: January 4, 2018Date of Patent: December 24, 2019Assignee: National Technology & Engineering Solutions of Sandia, LLCInventors: F. Patrick Doty, Pin Yang, Xiaowang Zhou -
Patent number: 10468450Abstract: This disclosure is directed at a photoconductive element for a digital X-ray imaging system which consists of a detector element comprising at least one semiconducting layer for absorbing photons, a first electrode coupled to a surface of said semiconducting layer, a second electrode coupled to a surface of said semiconducting layer, wherein said first electrode and said second electrode are separated horizontally, and at least one of said electrodes is electrically isolated from said semiconducting layer by an insulating layer; a readout circuit element coupled to said detector element; and a dielectric layer between said detector element and said readout circuit element.Type: GrantFiled: April 4, 2014Date of Patent: November 5, 2019Assignee: DOSE SMART IMAGINGInventor: Karim Sallaudin Karim
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Patent number: 10429522Abstract: A Defect Specific Lifetime Analysis (DSLA) can measure electrostatic hole trapping characteristics of semiconductors to identify crystals for use in radiation detectors. A semiconductor crystal with high electrostatic hole trapping can be employed in radiation detectors having simplified signal processing circuits and/or high radiation energy measurement resolution.Type: GrantFiled: May 23, 2018Date of Patent: October 1, 2019Inventor: Emil Kamieniecki
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Patent number: 9869780Abstract: A method of manufacturing an organic-inorganic composite thin film may include: forming a thin film from a paste that includes an inorganic powder and an organic compound binder by using a screen printing process; and/or performing a pressing process and a heating process with respect to the thin film. The heating process may be performed at a glass transition temperature of the organic compound binder or in a temperature range higher than the glass transition temperature of the organic compound binder. An X-ray detector configured to detect X-rays irradiated from an outside of the X-ray detector may include: a photoconductive material layer in which electron-hole pairs are formed due to absorption of the X-rays. The photoconductive material layer may be formed of an organic-inorganic composite thin film that includes an inorganic powder and an organic compound binder.Type: GrantFiled: June 12, 2015Date of Patent: January 16, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Duhyun Lee, Byungkyu Lee, Sunil Kim, Jaechul Park, Dongwook Lee, Changbum Lee
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Patent number: 9797065Abstract: A crystal can be formed using vapor deposition. In one set of embodiments, the crystal can be grown such that the crystal selectively grown along a particular surface at a relatively faster rate as compared to another surface. In another embodiment, the assist material may aid in transporting or depositing the vapor species of a constituent to surfaces of the crystal. In a further set of embodiments, the crystal can be vapor grown in the presence of an assist material that is attracted to or repelled from a particular location of the crystal to increase or reduce crystal growth rate at a region adjacent to the location. The position of the relatively locally greater net charge within the assist material may affect the crystal plane to which the assist material is attracted or repelled. An as-grown crystal may be achieved that has a predetermined geometric shape.Type: GrantFiled: August 10, 2012Date of Patent: October 24, 2017Inventors: Elsa Ariesanti, Douglas S. McGregor
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Patent number: 9791321Abstract: A multi-pixel terahertz transceiver is constructed using a stack of semiconductor layers that communicate using vias defined within the semiconductor layers. By using a stack of semiconductor layers, the various electrical functions of each layer can be tested easily without having to assemble the entire transceiver. In addition, the design allows the production of a transceiver having pixels set 10 mm apart.Type: GrantFiled: May 24, 2013Date of Patent: October 17, 2017Assignee: California Institute of TechnologyInventors: Goutam Chattopadhyay, Ken B. Cooper, Emmanuel Decrossas, John J. Gill, Cecile Jung-Kubiak, Choonsup Lee, Robert Lin, Imran Mehdi, Alejandro Peralta, Theodore Reck, Jose Siles
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Patent number: 9437692Abstract: Technologies are described effective to implement systems and methods of producing a material. The methods comprise receiving a tertiary semiconductor sample with a dilute species. The sample has two ends. The first end of the sample includes a first concentration of the dilute species lower than a second concentration of the dilute species in the second end of the sample. The method further comprises heating the sample in a chamber. The chamber has a first zone and a second zone. The first zone having a first temperature higher than a second temperature in the second zone. The sample is orientated such that the first end is in the first zone and the second end is in the second zone.Type: GrantFiled: October 25, 2013Date of Patent: September 6, 2016Assignee: Brookhaven Science Associates, LLCInventors: Ralph B. James, Giuseppe Camarda, Aleksey E. Bolotnikov, Anwar Hossain, Ge Yang, Kihyun Kim
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Patent number: 9306108Abstract: In an X-ray strip detector, at least one joining semiconductor film are formed on surface of a sensitive semiconductor film, on the part of X-strips and Y-strips, that is sensitive to incident X-rays to generate electric charge, and on at least an entire sensitive region of a conversion film. The joining semiconductor film has higher resistance value than resistance value of the sensitive semiconductor film. Accordingly, when the electric charge generated in the sensitive semiconductor film are collected in the X-strips and the Y-strips, movement of the electric charge into other adjacent strip electrodes is avoidable. Consequently, crosstalk can be suppressed that the electric charge leak to the adjacent strip electrodes.Type: GrantFiled: January 12, 2015Date of Patent: April 5, 2016Assignee: SHIMADZU CORPORATIONInventors: Takahiro Doki, Koichi Tanabe, Toshinori Yoshimuta, Hiroyuki Kishihara, Satoshi Sano
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Patent number: 8981312Abstract: Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 ?m to about 400 ?m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 1010 cm?3.Type: GrantFiled: September 10, 2013Date of Patent: March 17, 2015Assignee: Sandia CorporationInventor: Michael J. Cich
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Patent number: 8963098Abstract: The present invention relates to an X-ray detector having an X-ray sensor (first X-ray sensor) converting X-radiation directly into electric charge carriers, having signal evaluation electronics electrically connected to the X-ray sensor and preferably formed as integrated circuit(s), having an X-ray absorber formed for protecting the signal evaluation electronics, and having a sensor carrier (first sensor carrier) formed and arranged for positioning the X-ray sensor relative to the X-ray absorber, wherein, viewed in the direction of incidence of the X-radiation, both the signal evaluation electronics are arranged behind the X-ray absorber and in the X-radiation shadow thereof and the X-ray sensor is admittedly likewise positioned by means of the sensor carrier preferably arranged between the X-ray absorber and the signal evaluation electronics at least sectionally behind the X-ray absorber, but outside the X-radiation shadow thereof.Type: GrantFiled: July 27, 2012Date of Patent: February 24, 2015Assignee: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.Inventors: Thomas Lohse, Peter Krueger, Martin Oppermann, Thomas Zerna, Oliver Albrecht, René Metasch, Annika Oettl
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Patent number: 8963096Abstract: Example embodiments are directed an X-ray detector including an oxide semiconductor transistor. The X-ray detector including the oxide semiconductor transistor includes an oxide semiconductor transistor and a signal storage capacitor in parallel to each other on a substrate. The oxide semiconductor transistor includes a channel formed of an oxide semiconductor material, and a photoconductor. A pixel electrode and a common electrode are formed on opposite surfaces of the photoconductor. The channel includes ZnO, or a compound including ZnO and at least one selected from a group consisting of gallium (Ga), indium (In), hafnium (Hf), and tin (Sn).Type: GrantFiled: December 17, 2010Date of Patent: February 24, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Sun-il Kim, Jae-chul Park, Sang-wook Kim, Chang-jung Kim
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Publication number: 20140332691Abstract: The present invention relates to a pixel detector (10), comprising a semiconductor sensor layer (12), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer (14) connected to said semiconductor layer (12), said read-out electronics layer (14) comprising an array of read-out circuits (20) for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (12). The neighbouring read-out circuits (20) are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighbouring read-out circuits (20).Type: ApplicationFiled: September 21, 2011Publication date: November 13, 2014Applicants: CERN - EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH, Friedrich-Alexander-Universitat Erlangen-Numberg, Czech Technical University in Prague Institute of Experimental and Applied PhysicsInventors: Michael Campbell, Thilo Michel, Jan Jakubek
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Publication number: 20140233797Abstract: A High-resolution Image Acquisition and Processing Instrument (HIAPI) performs at least five simultaneous measurements in a noninvasive fashion, namely: (a) determining the volume of a liquid sample in welh (or microtubes) containing liquid sample, (b) detection of precipitate, objects of artifacts within microliter plate wells, (c) classification of colored samples in microliter plate wells or microtubes; (dl determination of contaminant (e.g. wafer concentration}; (e) air bubbles; (f) problems with the actual plate. Remediation of contaminant is also possible.Type: ApplicationFiled: February 3, 2014Publication date: August 21, 2014Applicant: The Scripps Research InstituteInventors: Peter HODDER, Louis Daniel SCAMPAVIA, Pierre Elliott BAILLARGEON
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Publication number: 20140217297Abstract: A radiation detector system is disclosed that effectively solves the electron trapping problem by optimizing shielding of the individual virtual Frisch-grid detectors in an array configuration.Type: ApplicationFiled: October 29, 2013Publication date: August 7, 2014Applicant: Brookhaven Science Associates, LLCInventors: Aleksey Bolotnikov, Ralph B. James, Gianluigi De Geronimo, Emerson Vernon
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Publication number: 20140209809Abstract: The present disclosure provides a radiation detector, comprising: a semiconductor crystal for detecting radiation, the semiconductor crystal comprising a top surface, a bottom surface, and at least one side surface; at least one anode arranged on at least one of the top surface, the bottom surface, and the at least one side surface; and at least one cathode arranged on at least another one of the top surface, the bottom surface, and the at least one side surface, wherein the at least one anode each has a stripe shape, the at least one cathode each has a planar or curved shape, and the at least one cathode and the at least one anode extend in parallel with respect to each other to a length substantially equal to that of the anode. Such an electrode structure can improve energy resolution and detection efficiency of the radiation detector effectively.Type: ApplicationFiled: January 27, 2014Publication date: July 31, 2014Inventors: Lan Zhang, Yulan Li, Yuangjing Li, Yinong Liu, Jianqiang Fu, Hao Jiang, Wei Zhang, Yanqing Liu, Jun Liu
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Publication number: 20140097349Abstract: According to one embodiment, a crystal includes thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants. According to another embodiment, a system includes a monolithic crystal including thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants; and a detector configured to detect a signal response of the crystal.Type: ApplicationFiled: October 2, 2013Publication date: April 10, 2014Applicant: Lawrence Livermore National Security, LLCInventors: Cedric Rocha Leao, Vincenzo Lordi
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Patent number: 8664613Abstract: The present invention provides a radiation measurement device, which shortens periodic interruption periods in the radiation measurements and prevents damage to the amplifier, and a nuclear medicine diagnosis system using such measurement device. The radiation measurement device comprises a semiconductor radiation detector detecting a radiation, a capacitor, which applies voltage to the semiconductor radiation detector, one or more direct current power supplies each capable of making either of positive and negative electric charge collect on one of the electrodes of the capacitor, a constant-current device, which conducts an electric current from the direct current power supplies to the one of the electrodes of the capacitor, and two or more switching devices installed in the wiring connecting the direct current power supplies and the one of the electrodes of the capacitor. Further disclosed is a nuclear medicine diagnosis system equipped with such radiation measurement device.Type: GrantFiled: February 10, 2011Date of Patent: March 4, 2014Assignee: Hitachi, Ltd.Inventors: Shinya Kominami, Tomoyuki Seino
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Patent number: 8664616Abstract: In a method of count correction for pixels of a pixilated photon counting detector, the average count value output by each of a plurality of pixels during a period of time is determined. A product is determined of the actual average count value and a multiplying correction factor. A corrected count value is then determined for the pixel equal to a sum of the product and an additive correction factor. The multiplying correction factor equals a square root of a quotient of a desired average count value to be output by each of the plurality of pixels during the period of time divided by the actual average count value. The additive correction factor equals a product of the multiplying correction factor and the actual average count value subtracted from the desired average count value.Type: GrantFiled: June 11, 2009Date of Patent: March 4, 2014Assignee: EV Products, Inc.Inventor: David S. Rundle
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Patent number: 8653469Abstract: A probe for detecting K-alpha photon emissions. A housing has an aperture at an end. A detector crystal is situated within the housing adjacent to the housing aperture. An energy conversion device is situated within the housing between the detector crystal and the aperture. The energy conversion device is made from a predetermined material configured to convert energy directed through the housing aperture from a source of primary photon emission radiation to a corresponding secondary K-alpha emission within a predetermined emission energy acceptance window. A power supply is coupled to the detector crystal and is configured to establish a polarized electrical field between the anode and the cathode of the detector crystal. The detector crystal receives the K-alpha emission and generates an electrical signal representative of the amount of target emissions received through the housing aperture.Type: GrantFiled: December 10, 2012Date of Patent: February 18, 2014Assignee: Devicor Medical Products, Inc.Inventor: John D. Call
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Patent number: 8530850Abstract: A calibrated real-time, high energy X-ray imaging system is disclosed which incorporates a direct radiation conversion, X-ray imaging camera and a high speed image processing module. The high energy imaging camera utilizes a Cd—Te or a Cd—Zn—Te direct conversion detector substrate. The image processor includes a software driven calibration module that uses an algorithm to analyze time dependent raw digital pixel data to provide a time related series of correction factors for each pixel in an image frame. Additionally, the image processor includes a high speed image frame processing module capable of generating image frames at frame readout rates of greater than ten frames per second to over 100 frames per second. The image processor can provide normalized image frames in real-time or can accumulate static frame data for substantially very long periods of time without the typical concomitant degradation of the signal-to-noise ratio.Type: GrantFiled: September 14, 2005Date of Patent: September 10, 2013Assignee: Oy AJAT LtdInventors: Konstantinos Spartiotis, Tuomas Pantsar
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Patent number: 8519347Abstract: Compounds, methods and devices for detecting incident radiation, such as incident x-rays or gamma-rays, are provided. The detection of incident radiation can be accomplished by employing inorganic compounds that include elements with high atomic numbers, that have band gaps of at least about 1.5 eV, and that have an electrical resistivity of at least 106 ?cm as photoelectric materials in a radiation detector. The compounds include inorganic compounds comprising at least one element from periods five or six of the Periodic Table of the Elements.Type: GrantFiled: August 9, 2011Date of Patent: August 27, 2013Assignee: Northwestern UniversityInventors: Mercouri G. Kanatzidis, Ioannis Androulakis, Simon Johnsen, Sebastian C. Peter
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Publication number: 20130214170Abstract: One or more techniques and/or systems described herein implement, among other things, a flat panel detector component for detecting actinic and non-actinic radiation, or the formation thereof. The flat panel detector component comprises a plurality of layers, where at least one of the layers comprises silk. Further, a silk layer may be in direct physical contact with a radiation detection layer.Type: ApplicationFiled: October 28, 2010Publication date: August 22, 2013Inventor: Sorin Marcovici
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Patent number: 8487266Abstract: An X-ray detector includes an X-ray photoelectric conversion layer configured to produce electric charges in proportion to X-ray irradiation incident on the layer, a collecting electrode configured to collect the electric charges produced by the X-ray photoelectric conversion layer, a common electrode disposed on a surface of the X-ray photoelectric conversion layer opposite to the collecting electrode, a storage capacitor configured to store the electric charges collected by the collecting electrode, and a readout unit configured to read out the electric charges stored in the storage capacitor. A voltage is to be applied between the collecting electrode and the common electrode. The X-ray photoelectric conversion layer is formed of a polycrystalline oxide.Type: GrantFiled: January 4, 2011Date of Patent: July 16, 2013Assignee: Canon Kabushiki KaishaInventors: Hisato Yabuta, Nobuyuki Kaji, Ryo Hayashi, Masatoshi Watanabe, Taihei Mukaide, Kazunori Fukuda
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Patent number: 8487259Abstract: An image sensor comprises a photoelectric conversion element receiving light to accumulate photocharges, and a wavelength conversion layer formed above the photoelectric conversion element to convert light within a first wavelength band into light within a second wavelength band shorter than the first wavelength band and supply the converted light to the photoelectric conversion element.Type: GrantFiled: September 15, 2010Date of Patent: July 16, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Kyoung Lae Cho, Hyun Min Cho
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Publication number: 20130161523Abstract: A radiation detector is provided employing a focus grid electrode. The focus grid electrode is biased relative to one or more anode electrodes. In this manner, movement of electrons to the anode electrodes may be enhanced, such as due to a higher electrical field strength in a conversion material and/or due to focusing of the resulting electrical field on the anode electrodes.Type: ApplicationFiled: December 23, 2011Publication date: June 27, 2013Applicant: General Electric CompanyInventors: John Eric Tkaczyk, Vladimir A. Lobastov, Yanfeng Du
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Publication number: 20130126746Abstract: A novel radiation detector system is disclosed that solves the electron trapping problem by optimizing shielding of the individual virtual Frisch-grid detectors in an array configuration.Type: ApplicationFiled: May 2, 2011Publication date: May 23, 2013Applicant: BROOKHAVEN SCIENCE ASSOCIATES, LLCInventors: Aleksey E. Bolotnikov, Ge Yang, Giuseppe Camarda, Yonggang Cui, Anwar Hossain, Ki Hyun Kim, Ralph B. James
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Publication number: 20130108019Abstract: Detector modules for an imaging system and methods of manufacturing are provided. One detector module includes a substrate, a direct conversion sensor material coupled to the substrate and a flexible interconnect electrically coupled to the direct conversion sensor material and configured to provide readout of electrical signals generated by the direct conversion sensor material. The detector module also includes at least one illumination source for illuminating the direct conversion sensor material.Type: ApplicationFiled: October 27, 2011Publication date: May 2, 2013Applicant: General Electric CompanyInventors: John Eric Tkaczyk, Kevin Matthew Durocher, James Rose, Haochuan Jiang, Abdelaziz Ikhlef, Vladimir Lobastov, Daniel David Harrison
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Publication number: 20130082185Abstract: A chalcogenide glass radiation sensor comprising a chalcogenide glass layer coupled to at least two electrodes and a metal source, and a method using the same are disclosed. The chalcogenide glass layer has a resistivity and the at least two electrodes are configured to facilitate the measurement of the resistivity of the chalcogenide glass layer. The coupling of the metal source and the chalcogenide glass layer is such that the resistivity of the chalcogenide glass layer changes upon exposure to ionizing radiation. The metal source is configured to be external to an electric field that may form between the at least two electrodes as the resistivity of the chalcogenide glass layer is measured.Type: ApplicationFiled: September 29, 2011Publication date: April 4, 2013Inventors: Maria Mitkova, Darryl P. Butt
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Patent number: 8405037Abstract: A radiation detector of this invention includes a Cl-doped CdTe or Cl-doped CdZnTe polycrystalline semiconductor film in which defect levels in crystal grains are protected. This is obtained by grinding CdTe or CdZnTe crystal doped with Cl, and preparing the polycrystalline semiconductor film again by using its powder as the source. The defect levels of crystal grain boundaries in the polycrystalline semiconductor film are also protected by further doping the polycrystalline semiconductor film prepared again with Cl. These features enable manufacture of the radiation detector which has excellent sensitivity and response to radiation.Type: GrantFiled: February 12, 2008Date of Patent: March 26, 2013Assignees: Shimadzu Corporation, Institute of National Colleges of Technology, JapanInventors: Satoshi Tokuda, Hiroyuki Kishihara, Masatomo Kaino, Tamotsu Okamoto
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Publication number: 20130051529Abstract: A method and system for facilitating the identification and/or authentication of objects, and to a method and system for the marking of objects with an identity and/or as of authentic origin, and a set of objects marked to facilitate subsequent identification and/or authentication are described. The marking comprises incorporating into an object or part thereof or onto a tag mechanically engaged therewith a marker material exhibiting a characteristic radiation interaction response to incident high-energy ionizing radiation from a test source that is known to vary spectroscopically across the spectrum of the source. The presence or otherwise of the marker material may be determined by subsequent interrogation of an object with a suitable radiation source and detector to infer whether an object is of marked identity or origin.Type: ApplicationFiled: March 11, 2011Publication date: February 28, 2013Inventors: Arnab Basu, Ian Radley, Max Robinson
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Publication number: 20130048869Abstract: The present invention provides a radiation measurement device, which shortens periodic interruption periods in the radiation measurements and prevents damage to the amplifier, and a nuclear medicine diagnosis system using such measurement device. The radiation measurement device comprises a semiconductor radiation detector detecting a radiation, a capacitor, which applies voltage to the semiconductor radiation detector, one or more direct current power supplies each capable of making either of positive and negative electric charge collect on one of the electrodes of the capacitor, a constant-current device, which conducts an electric current from the direct current power supplies to the one of the electrodes of the capacitor, and two or more switching devices installed in the wiring connecting the direct current power supplies and the one of the electrodes of the capacitor. Further disclosed is a nuclear medicine diagnosis system equipped with such radiation measurement device.Type: ApplicationFiled: February 10, 2011Publication date: February 28, 2013Applicant: HITACHI, LTD.Inventors: Shinya Kominami, Tomoyuki Seino
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Patent number: 8368029Abstract: A multi-modality imaging system for imaging of an object under study, e.g., a whole body or parts of the body of animals such as humans, other primates, swine, dogs, or rodents, that includes a magnetic resonance imaging apparatus and a cadmium zinc telluride (CZT)-family semiconductor, single-photon imaging apparatus within a magnetic field produced by the magnetic resonance imaging apparatus such that sequential or simultaneous imaging can be done with the two modalities using the same support bed of the object under study in the same, uninterrupted imaging session.Type: GrantFiled: October 11, 2011Date of Patent: February 5, 2013Assignee: Gamma Medica-Ideas, Inc.Inventors: Douglas J. Wagenaar, Bradley E. Patt
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Publication number: 20130026379Abstract: The present invention relates to an X-ray detector having an X-ray sensor (first X-ray sensor) converting X-radiation directly into electric charge carriers, having signal evaluation electronics electrically connected to the X-ray sensor and preferably formed as integrated circuit(s), having an X-ray absorber formed for protecting the signal evaluation electronics, and having a sensor carrier (first sensor carrier) formed and arranged for positioning the X-ray sensor relative to the X-ray absorber, wherein, viewed in the direction of incidence of the X-radiation, both the signal evaluation electronics are arranged behind the X-ray absorber and in the X-radiation shadow thereof and the X-ray sensor is admittedly likewise positioned by means of the sensor carrier preferably arranged between the X-ray absorber and the signal evaluation electronics at least sectionally behind the X-ray absorber, but outside the X-radiation shadow thereof.Type: ApplicationFiled: July 27, 2012Publication date: January 31, 2013Applicant: Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.Inventors: Thomas Lohse, Peter Krueger, Martin Oppermann, Thomas Zerna, Oliver Albrecht, René Metasch, Annika Oettl
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Patent number: 8357909Abstract: In the light or radiation detector of this invention, each of the molding structure, the first member, and the second member is formed such that the molding structure to protect the conversion layer and voltage application electrode has the resistance higher than the first member composed of the planar conductive buffer that is laminated on the (light or radiation) incident surface side of the molding structure, and that the first member mentioned above has the resistance higher than the second member composed of the planar conductive member that is laminated on the incident surface side of the first member. Consequently, occurrence of the noise from the static electricity may be suppressed.Type: GrantFiled: October 23, 2007Date of Patent: January 22, 2013Assignee: Shimadzu CorporationInventor: Toshinori Yoshimuta
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Patent number: 8344331Abstract: A probe for detecting K-alpha photon emissions. A housing has an aperture at an end. A detector crystal is situated within the housing adjacent to the housing aperture. An energy conversion device is situated within the housing between the detector crystal and the aperture. The energy conversion device is made from a predetermined material configured to convert energy directed through the housing aperture from a source of primary photon emission radiation to a corresponding secondary K-alpha emission within a predetermined emission energy acceptance window. A power supply is coupled to the detector crystal and is configured to establish a polarized electrical field between the anode and the cathode of the detector crystal. The detector crystal receives the K-alpha emission and generates an electrical signal representative of the amount of target emissions received through the housing aperture.Type: GrantFiled: March 19, 2010Date of Patent: January 1, 2013Assignee: Devicor Medical Products, Inc.Inventor: John D. Call
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Patent number: 8314395Abstract: A radiation detector includes a semiconductor crystal having a first surface and a second surface opposite to the first surface, a first electrode electrically coupled with the first surface of the semiconductor crystal to allow current to flow between the first electrode and the crystal, and an insulating layer on the first surface and between the semiconductor crystal and the first electrode so as to create a partially transmissive electrical barrier between the first electrode and the crystal. The insulating layer has a thickness ranging from about 50 nanometers to about 500 nanometers.Type: GrantFiled: August 31, 2009Date of Patent: November 20, 2012Assignee: General Electric CompanyInventors: Minglong Zhang, Yanfeng Du, John Eric Tkaczyk, Zhaoping Wu, Ira Blevis
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Patent number: 8274058Abstract: A heterodyne terahertz transceiver comprises a quantum cascade laser that is integrated on-chip with a Schottky diode mixer. A terahertz signal can be received by an antenna connected to the mixer, an end facet or sidewall of the laser, or through a separate active section that can amplify the incident signal. The quantum cascade laser couples terahertz local oscillator power to the Schottky diode to mix with the received terahertz signal to provide an intermediate frequency output signal. The fully integrated transceiver optimizes power efficiency, sensitivity, compactness, and reliability. The transceiver can be used in compact, fieldable systems covering a wide variety of deployable applications not possible with existing technology.Type: GrantFiled: June 22, 2009Date of Patent: September 25, 2012Assignee: Sandia CorporationInventors: Michael C. Wanke, Mark Lee, Christopher D. Nordquist, Michael J. Cich
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Publication number: 20120211663Abstract: An X-ray detector includes a photoconductor, a first diffusion barrier film on a first surface of the photoconductor, at least one pixel electrode on the first diffusion barrier film, a signal transmitting unit to process an electrical signal output from the at least one pixel electrode, and a common electrode on a second surface of the photoconductor opposite to the first surface of the photoconductor.Type: ApplicationFiled: September 28, 2011Publication date: August 23, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sun-il Kim, Jae-chul Park, Chang-jung Kim, Sang-wook Kim
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Patent number: 8232531Abstract: Improved corrosion resistance for direct X-ray imaging detectors is obtained by providing a pixelated, electrically conductive barrier layer between the X-ray sensitive material and the pixel electrodes. Each barrier layer can cover part or all of its corresponding pixel electrode. In cases where pixel electrodes makes contact to underlying circuitry through vertical vias, it is preferred for the barrier layers to cover the via sections of the pixel electrodes. The barrier layers for each pixel electrode can be spaced apart from each other, or they can all be included within a continuous film on top of the pixel electrodes. Such a continuous film can be pixelated by spatially modulating its properties (e.g., thickness, doping) to significantly reduce lateral conductivity from pixel to pixel.Type: GrantFiled: March 29, 2007Date of Patent: July 31, 2012Assignees: Varian Medical Systems, Inc., dpiX, LLCInventors: George Zentai, Larry Partain, William Wei-Yu Yao, Richard Weisfield
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Publication number: 20120181435Abstract: A ?-radiation detection system that includes at least one semiconductor detector such as HPGe-Detector, a position-sensitive ?-Detector, a TOF Controller, and a Digitizer/Integrator. The Digitizer/Integrator starts to process the energy signals of a ?-radiation sent from the HPGe-Detector instantly when the HPGe-Detector detects the ?-radiation. Subsequently, it is determined whether a coincidence exists between the ?-particles and ?-radiation signal, based on a determination of the time-of-flight of neutrons obtained from the ?-Detector and the HPGe-Detector. If it is determined that the time-of-flight falls within a predetermined coincidence window, the Digitizer/Integrator is allowed to continue and complete the energy signal processing. If, however, there is no coincidence, the Digitizer/Integrator is instructed to be clear and reset its operation instantly.Type: ApplicationFiled: January 4, 2012Publication date: July 19, 2012Applicant: Brookhaven Science Associates, LLCInventors: Istvan Dioszegi, Cynthia Salwen, Peter Vanier
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Patent number: 8207503Abstract: A detector of periodic packets of X photons, each packet having a duration shorter than 0.1 nanosecond, comprising a sensor comprising a semiconductor element of type III-V biased in a negative differential resistance region, said sensor being arranged in a resonant cavity tuned to a multiple of the packet repetition frequency.Type: GrantFiled: August 13, 2009Date of Patent: June 26, 2012Assignee: European Synchrotron Radiation FacilityInventors: José Goulon, Gérard Goujon, Andrei Rogalev, Fabrice Wilhelm
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Publication number: 20120153178Abstract: Compounds, methods and devices for detecting incident radiation, such as incident x-rays or gamma-rays, are provided. The detection of incident radiation can be accomplished by employing inorganic compounds that include elements with high atomic numbers, that have band gaps of at least about 1.5 eV, and that have an electrical resistivity of at least 106 ?cm as photoelectric materials in a radiation detector. The compounds include inorganic compounds comprising at least one element from periods five or six of the Periodic Table of the Elements.Type: ApplicationFiled: August 9, 2011Publication date: June 21, 2012Inventors: Mercouri G. Kanatzidis, Ioannis Androulakis, Simon Johnsen, Sebastian C. Peter
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Publication number: 20120153166Abstract: A highly scalable platform for radiation measurement data collection with high precision time stamping and time measurements between the elements in the detection array uses IEEE 1588 with or without Synchronous Ethernet (timing over Ethernet) to synchronize the measurements. At a minimum, the system includes at least two radiation detector units, an IEEE 1588 and SyncE enabled Ethernet switch, and a computer for processing. The addition of timing over Ethernet and power over Ethernet (PoE) allows a radiation measurement system to operate with a single Ethernet cable, simplifying deployment of detectors using standardized technology with a multitude of configuration possibilities. This eliminates the need for an additional hardware for the timing measurements which simplifies the detection system, reduces the cost of the deployment, reduces the power consumption of the detection system and reduces the overall size of the system.Type: ApplicationFiled: May 5, 2011Publication date: June 21, 2012Inventors: Andrey K. Gueorguiev, Martin F. Ohmes, Jeffrey R. Preston, Leslie D. Hoy, Hartmut Brands
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Publication number: 20120140881Abstract: A drive controller varies a bias voltage applied from a bias supply to a conversion layer based on the presence or absence of binning, that is, for a case of carrying out binning where switching elements are driven on the basis of a plurality of rows at a time by a gate drive circuit, and for a case of carrying out no binning where the switching elements are driven on a row-by-row basis by the gate drive circuit. Therefore, in the case of a fluoroscopic mode for acquiring images with binning, a lowering of a dynamic range can be suppressed. In the case of a radiographic mode with no binning, spatial resolution can be made high. That is, a high dynamic range and high spatial resolution can be optimized according to modes of operation.Type: ApplicationFiled: October 11, 2011Publication date: June 7, 2012Inventors: Akina Yoshimatsu, Koichi Tanabe, Satoshi Tokuda, Toshinori Yoshimuta, Hiroyuki Kishihara, Masatomo Kaino, Toshiyuki Sato, Shoji Kuwabara