Abstract: It is an object to provide an imaging method and system. According to an embodiment, an imaging method comprises emitting neutrons into a material, wherein the material converts at least part of the emitted neutrons into a first plurality of gamma ray photons, and wherein at least part of the emitted neutrons pass through the material. Based on the neutrons passed through the material and the gamma ray photons, at least one property of the material can be deduced. An imaging method and an imaging system are provided.

Abstract: The present disclosure provides an X-ray detecting device, and a manufacturing method of an X-ray detecting panel. The present disclosure also provides an X-ray detecting panel including a main bias voltage signal line and a photodiode. A cathode of the photodiode is electrically connected to the main bias voltage signal line. The X-ray detecting panel further includes at least one auxiliary bias voltage signal line electrically connected to the main bias voltage signal line.

Abstract: A radiation sensor includes a radiation-sensitive semiconductor layer, a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation, at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer, and a potential barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer.

Abstract: A camera module is provided. The camera module includes a substrate; a first camera disposed on the substrate and configured to generate a first image based on a first optical signal; a second camera disposed on the substrate and configured to generate a second image based on a second optical signal; a power management integrated circuit disposed on the substrate and configured to generate a plurality of voltages based on an external power voltage received from an external power supply and provide the plurality of voltages to the first camera and the second camera; a metal fixing member coupled to the first camera and the second camera; and a thermal interface material disposed between the power management integrated circuit and the metal fixing member along a direction perpendicular to an upper surface of the substrate.

Abstract: Disclosed herein are methods of making and using an absorption-unit array suitable for X-ray detection and a detector comprising such an absorption-unit array. The methods of making the absorption-unit array may include forming the absorption-unit array on a substrate and forming a guard ring encompassing more than one absorption units of the absorption-unit array after separating the absorption-unit array from the substrate; or may include forming a plurality of absorption units and a guard ring encompassing more than one of the absorption units on a portion of a substrate after separating the portion from the substrate. The method of using an absorption-unit array may include using some of the absorption units of the absorption-unit array as a guard ring by applying an electrical voltage. A detector suitable for X-ray detection comprises an absorption layer and an electronics layer, wherein the absorption layer comprises an absorption-unit array.

Abstract: Controlling total emission current of an electron emitting construct in an x-ray emitting device by providing a cathode, providing multiple active areas each active area having a gated cone electron source, including multiple emitter tips arranged in an array, a gate electrode, and a gate interconnect lead connected to the gate electrode, providing an x-ray emitting construct comprising an anode, the anode being an x-ray target, situating the x-ray emitting construct facing the active areas face each other, selecting a set of active areas, and activating selected active areas by conductively connecting a voltage source to their associated the gate electrode interconnect lead.

Abstract: An X-ray CT apparatus according to one embodiment includes a photon counting detector and a processing circuitry. The photon counting detector includes a plurality of detecting elements configured to detect X-rays. The processing circuitry is configured to set a control parameter corresponding to a position of each detecting element of the plurality of detecting elements in the photon counting detector.

Abstract: Disclosed is a semiconductor radiation detector for detecting X-ray and/or gamma-ray radiation. The radiation detector comprises: a converter element for converting incident X-ray and gamma-ray photons into electron-hole pairs; a plurality of first cathode electrodes extending along a first axis and being arranged on a first side of the converter element with a pitch (P) along a second axis perpendicular to the first axis; at least one anode electrode arranged on a second side of the converter element; a readout circuitry; and a processing unit connected to the readout circuitry. The Processing unit being configured to determine for each of the plurality of first cathode electrodes the electrical potential at a first and second point in time (t1) (t2) resulting in a plurality of determined potentials; and estimate the location of the event in the converter element along the second axis by processing the plurality of determined potentials.

Abstract: An X-ray sensor (1) having an active detector region including a plurality of detector diodes (2) arranged on a surface region (3) of the X-ray sensor (1), a junction termination (4) surrounding the surface area (3) including the plurality of detector diodes (2), the junction termination (4) including a guard (5) arranged closest to the end of the surface region (3), a field stop (6) arranged outside the guard (2) and a number N of field limiting rings, FLRs (7) arranged between the guard (5) and the field stop (6), wherein each of the FLRs (7) are placed at positions selected so that distances between different FLRs (7) and between the guard and the first FLR lie within an effective area, the effective area being bounded by the lines ?=(10+1.3×(n?1)) ?m and ?=(5+1.05×(n?1)) ?m.

Abstract: An X-ray detector device includes in one example a switching portion and a photodetecting portion connected to the switching portion. The photodetecting portion includes a bottom electrode, a semiconductor area disposed above the bottom electrode, and a top electrode disposed above the semiconductor area. The area of the top electrode is smaller than the area of a top surface of the semiconductor area.

Abstract: Disclosed herein is a detector, comprising: a plurality of pixels, each pixel configured to count numbers of X-ray photons incident thereon whose energy falls in a plurality of bins, within a period of time; and wherein the detector is configured to add the numbers of X-ray photons for the bins of the same energy range counted by all the pixels. Each of the pixels may comprise an analog-to-digital converter (ADC) configured to digitize an analog signal representing the energy of an incident X-ray photon into a digital signal. The pixels may be able to operate in parallel. Each of the pixels may be able to measure its dark current, such as before or concurrently with each X-ray photon incident thereon.

Abstract: A scintillation block detector employs an array of optically air coupled scintillation pixels, the array being wrapped in reflector material and optically coupled to an array of silicon photomultiplier light sensors with common-cathode signal timing pickoff and individual anode signal position and energy determination. The design features afford an optimized combination of photopeak energy event sensitivity and timing, while reducing electronic circuit complexity and power requirements, and easing necessary fabrication methods. Four of these small blocks, or “miniblocks,” can be combined as optically and electrically separated quadrants of a larger single detector in order to recover detection efficiency that would otherwise be lost due to scattering between them.

Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.

Abstract: The objective of the present invention is to effectively improve an image lag phenomenon of a direct conversion detector. The present invention provides an X-ray detector comprising: a lower electrode, formed on a substrate, to which a first driving voltage V1 is applied; an auxiliary electrode, around the lower electrode, to which a third driving voltage V3 is applied; a photoconductive layer formed on the lower electrode and the auxiliary electrode; and an upper electrode, formed on the photoconductive layer, to which a second driving voltage V2 is applied, wherein the third driving voltage V3, right after the radiation of the X-rays is off, is a reverse bias voltage.

Abstract: The present invention is directed towards a moisture resistant radiation detector core assembly which was constructed by first assembling the photon-electron conversion layer, integrated circuit and the connection elements between and then encapsulating the whole assembly. This provides improved moisture barrier properties, since the encapsulation also covers the connection elements and does not have to be opened to apply the electrical connections, as is done for known radiation detector core assemblies.

Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.

Abstract: Techniques for controlling a stability of response of a semi-conductor matrix imager composed of pixels, including a first phase of characterizing the stability of the pixels and a second phase of correcting the signals arising from the pixels during the measurements. The pixels are classed into stable pixels and unstable pixels according to a predetermined criterion, the unstable pixels being associated individually with a stable pixel whose characteristics serve as base for correcting signals arising from the unstable pixels.

Abstract: A semiconductor radiation detector having a semiconductor substrate and first and second metal layers. The semiconductor substrate has substantially planar upper and lower opposing surfaces which have respective first and second surface areas. The first and second surface areas are defined by prospective dice lines. The first metal layer is on the substantially planar upper surface such that the first metal layer will have a surface area less than the first surface area of the substantially planar upper surface as defined by spaces on the substantially planar upper surface between the first metal layer and the prospective dice lines which define the first surface area. The second metal layer is on the substantially planar lower opposing surface.

Abstract: A radiation detector is provided. The radiation detection comprises a semiconductor crystal for detecting radiation. The semiconductor crystal comprises a top surface, a bottom surface, and at least one side surface. At least one anode is arranged on at least one of the top surface, the bottom surface, and the at least one side surface. At least one cathode is arranged on at least another one of the top surface, the bottom surface, and the at least one side surface. The at least one anode each has a stripe shape, the at least one cathode each has a planar or curved shape, and the at least one cathode and the at least one anode extend in parallel with respect to each other to a length substantially equal to that of the anode. Such an electrode structure can improve energy resolution and detection efficiency of the radiation detector effectively.

Abstract: The invention relates to a method for conditioning the CdTe layer of CdTe thin-film solar cells without the use of CdCl2. Calcium tetrachlorozincate (CaZnCl4) is to be used instead of CdCl2 for activation, and the process parameters that have proven themselves over time are to be kept. The method involves the activation of the CdTe layer of semi-finished thin-film CdTe solar cells; calcium tetrachlorozincate is applied to the CdTe layer (4) and the semi-finished thin-film CdTe solar cell subsequently undergoes a heat treatment. The calcium tetrachlorozincate layer is preferably applied via methods from the prior art, for instance roller coating with an aqueous or methanolic salt solution, spraying on an aqueous or methanolic salt solution, an aerosol coating or a dipping bath.

Abstract: According to one embodiment, a scintillator radiation detector system includes a scintillator, and a processing device for processing pulse traces corresponding to light pulses from the scintillator, where the processing device is configured to: process each pulse trace over at least two temporal windows and to use pulse digitization to improve energy resolution of the system. According to another embodiment, a scintillator radiation detector system includes a processing device configured to: fit digitized scintillation waveforms to an algorithm, perform a direct integration of fit parameters, process multiple integration windows for each digitized scintillation waveform to determine a correction factor, and apply the correction factor to each digitized scintillation waveform.

Abstract: A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.

Abstract: A radiation detector system that effectively solves the electron trapping problem by optimizing shielding of individual virtual Frisch-grid detectors in an array configuration with a common cathode.

Abstract: A radiation detector system that solves the electron trapping problem by optimizing shielding of the individual virtual Frisch-grid detectors in an array configuration with a common cathode.

Abstract: A system for imaging a gamma source includes a pixelated Compton scattering layer, for Compton scattering of gamma photons emitted by the gamma source, and a non-pixelated full-energy detector for detecting at least a portion of Compton scattered gamma photons geometrically encoded by a coded aperture positioned between the pixelated Compton scattering layer and the full-energy detector at a distance from the pixelated Compton scattering layer. A method for imaging a gamma source includes (a) detecting coincidence events, each including Compton scattering in a pixelated Compton scattering layer, and transmission to a non-pixelated full-energy detector of a Compton scattered gamma photon transmitted through a coded aperture located at a distance from the pixelated Compton scattering layer, and (b) determining an image of the gamma source from the detection of the coincidence events.

Abstract: Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps. The method also includes growing a passivation oxide layer on a top of the polished first surface and depositing patterned metal contacts on a top of the passivation oxide layer. The method further includes applying a protecting layer on the patterned deposited metal contacts, etching a second surface of the semiconductor and applying a monolithic cathode electrode on the etched second surface of the semiconductor. The method additionally includes removing the protecting layer from the patterned metal contacts on the first surface, wherein the patterned metal contacts are formed from one of (i) reactive metals and (ii) stiff-rigid metals for producing inter-band energy-levels in the passivation oxide layer.

Abstract: Example embodiments are directed an X-ray detector including an oxide semiconductor transistor. The X-ray detector including the oxide semiconductor transistor includes an oxide semiconductor transistor and a signal storage capacitor in parallel to each other on a substrate. The oxide semiconductor transistor includes a channel formed of an oxide semiconductor material, and a photoconductor. A pixel electrode and a common electrode are formed on opposite surfaces of the photoconductor. The channel includes ZnO, or a compound including ZnO and at least one selected from a group consisting of gallium (Ga), indium (In), hafnium (Hf), and tin (Sn).

Abstract: A radiological image detection apparatus includes a scintillator, a pixel array, a first support and a case. The scintillator is formed of phosphor which emits fluorescence when exposed to radiation. The pixel array is provided in close contact with the scintillator and detects the fluorescence emitted from the scintillator. The first support supports at least one of the scintillator and the pixel array. The case includes a plurality of members having a first member provided with a ceiling plate part through which light penetrates. The case houses the scintillator, the pixel array and the support in a lightproof inner space formed by combining the plurality of members. The scintillator and the pixel array are disposed between the first support and the ceiling plate part. The first support absorbs light of a wavelength region corresponding to a part of a wavelength region which is sensed by the pixel array.

Abstract: A device (1) is provided for determining at least one parameter of a medium which has a sensor device (2) and an electronic device (3). To provide such a device with a cooling system for at least a portion of its components, the sensor device (2) and/or the electronic device (3) are arranged at least partly in at least one inner space (4, 5) of a housing (6). A passage (7) borders the inner space (4, 5) and a cooling chamber (8) through which a cooling medium can flow is arranged in proximity of the passage (7).

Abstract: A detector includes a photon-counting detector (PCD) layer and a cathode layer arranged adjacent to the PCD layer. The detector further includes a plurality of pixilated anodes arranged adjacent to the photon-counting detecting layer on a side opposite to the cathode layer. The detector also includes a plurality of collimator segments arranged above the cathode layer so as to block a portion of X-ray photons emitted from an X-ray source from reaching the anodes, where each collimator segment is arranged above a portion of at least one anode.

Abstract: The present invention relates to a pixel detector (10), comprising a semiconductor sensor layer (12), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer (14) connected to said semiconductor layer (12), said read-out electronics layer (14) comprising an array of read-out circuits (20) for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (12). The neighbouring read-out circuits (20) are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighbouring read-out circuits (20).

Abstract: An apparatus and process is provided to illustrate the manipulation of the internal electric field of CZT using multiple wavelength light illumination on the crystal surface at RT. The control of the internal electric field is shown through the polarization in the IR transmission image under illumination as a result of the Pockels effect.

Abstract: An electrical contact for a detector, the electrical component, comprising a cadmium tellurium component, a first layer formed onto the cadmium tellurium component, wherein the first layer comprises indium and a contact agent being bonded directly or indirectly to the first layer to be in electrical contact with the first layer. The contact agent may be a stud bump or a conductive adhesive interconnect being bonded indirectly to the first layer via noble metal shielding layer.

Abstract: The present invention provides a radiation detection system for detecting X-ray and gamma rays featuring Cd1-xMgx Te in solid solution as a crystal semiconductor and electrical connection means. The crystal has a composition in the range of Cd0.99Mg0.01Te to Cd0.71Mg0.29Te and may be doped with indium or another Group III element, which may be suitable for use at room temperature as well as controlled temperatures. The present invention further provides a method for detecting X- or gamma ray radiation by (a) providing a solid solution Cd1-xMgxTe crystal in the composition range of Cd0.99Mg0.01Te to Cd0.71Mg0.29Te; (b) providing an electrical contact means for connecting the Cd1-xMgxTe crystal to an amplification, measurement, identification or imaging means; and (c) detecting the presence of the X- or gamma ray radiation.

Abstract: A radiation detector system is disclosed that effectively solves the electron trapping problem by optimizing shielding of the individual virtual Frisch-grid detectors in an array configuration.

Abstract: The present disclosure provides a radiation detector, comprising: a semiconductor crystal for detecting radiation, the semiconductor crystal comprising a top surface, a bottom surface, and at least one side surface; at least one anode arranged on at least one of the top surface, the bottom surface, and the at least one side surface; and at least one cathode arranged on at least another one of the top surface, the bottom surface, and the at least one side surface, wherein the at least one anode each has a stripe shape, the at least one cathode each has a planar or curved shape, and the at least one cathode and the at least one anode extend in parallel with respect to each other to a length substantially equal to that of the anode. Such an electrode structure can improve energy resolution and detection efficiency of the radiation detector effectively.

Abstract: A detector array (110) includes a detector (112) configured to detect ionizing radiation and output a signal indicative of the detected radiation, wherein the detector at least includes a semiconductor element (118) and an illumination subsystem (120) configured to generate and transfer sub-band-gap illuminating radiation to selectively illuminate only a sub-portion of the semiconductor element in order to produce a spatially patterned illumination distribution inside the element.

Abstract: A probe for detecting K-alpha photon emissions. A housing has an aperture at an end. A detector crystal is situated within the housing adjacent to the housing aperture. An energy conversion device is situated within the housing between the detector crystal and the aperture. The energy conversion device is made from a predetermined material configured to convert energy directed through the housing aperture from a source of primary photon emission radiation to a corresponding secondary K-alpha emission within a predetermined emission energy acceptance window. A power supply is coupled to the detector crystal and is configured to establish a polarized electrical field between the anode and the cathode of the detector crystal. The detector crystal receives the K-alpha emission and generates an electrical signal representative of the amount of target emissions received through the housing aperture.

Abstract: A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.

Abstract: The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

Abstract: A 3D ultraviolet (UV) imaging LADAR system includes a UV source configured to generate a UV interrogation beam, a sensor configured to receive a UV return beam reflected from a target and to produce an electrical signal, and an imaging module coupled to the sensor and configured to receive the electrical signal and to generate a corresponding 3D image of the target. In one example, the sensor includes a down-shifting device configured to down-shift the UV return beam to a down-shifted light beam of a different wavelength, for example, in the visible or SWIR wavelength ranges.

Abstract: According to a radiation detector manufacturing method, a radiation detector and a radiographic apparatus of this invention, Cl-doped CdZnTe is employed for a conversion layer, with Cl concentration set to 1 ppm wt to 3 ppm wt inclusive, and Zn concentration set to 1 mol % to 5 mol % inclusive. This can form the conversion layer optimal for the radiation detector. Consequently, the radiation detector manufacturing method, the radiation detector and the radiographic apparatus can be provided which can protect the defect level of crystal grain boundaries by Cl doping in a proper concentration, and can further maintain integral sensitivity to radiation, while reducing leakage current, by Zn doping in a proper concentration.

Abstract: A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.

Abstract: A calibrated real-time, high energy X-ray imaging system is disclosed which incorporates a direct radiation conversion, X-ray imaging camera and a high speed image processing module. The high energy imaging camera utilizes a Cd—Te or a Cd—Zn—Te direct conversion detector substrate. The image processor includes a software driven calibration module that uses an algorithm to analyze time dependent raw digital pixel data to provide a time related series of correction factors for each pixel in an image frame. Additionally, the image processor includes a high speed image frame processing module capable of generating image frames at frame readout rates of greater than ten frames per second to over 100 frames per second. The image processor can provide normalized image frames in real-time or can accumulate static frame data for substantially very long periods of time without the typical concomitant degradation of the signal-to-noise ratio.

Abstract: Compounds, methods and devices for detecting incident radiation, such as incident x-rays or gamma-rays, are provided. The detection of incident radiation can be accomplished by employing inorganic compounds that include elements with high atomic numbers, that have band gaps of at least about 1.5 eV, and that have an electrical resistivity of at least 106 ?cm as photoelectric materials in a radiation detector. The compounds include inorganic compounds comprising at least one element from periods five or six of the Periodic Table of the Elements.

Abstract: One or more techniques and/or systems described herein implement, among other things, a flat panel detector component for detecting actinic and non-actinic radiation, or the formation thereof. The flat panel detector component comprises a plurality of layers, where at least one of the layers comprises silk. Further, a silk layer may be in direct physical contact with a radiation detection layer.

Abstract: An apparatus and process is provided to illustrate the manipulation of the internal electric field of CZT using multiple wavelength light illumination on the crystal surface at RT. The control of the internal electric field is shown through the polarization in the IR transmission image under illumination as a result of the Pockels effect.

Abstract: A radiation detector is provided employing a focus grid electrode. The focus grid electrode is biased relative to one or more anode electrodes. In this manner, movement of electrons to the anode electrodes may be enhanced, such as due to a higher electrical field strength in a conversion material and/or due to focusing of the resulting electrical field on the anode electrodes.

Abstract: A novel radiation detector system is disclosed that solves the electron trapping problem by optimizing shielding of the individual virtual Frisch-grid detectors in an array configuration.

Abstract: Detector modules for an imaging system and methods of manufacturing are provided. One detector module includes a substrate, a direct conversion sensor material coupled to the substrate and a flexible interconnect electrically coupled to the direct conversion sensor material and configured to provide readout of electrical signals generated by the direct conversion sensor material. The detector module also includes at least one illumination source for illuminating the direct conversion sensor material.