Abstract: A sampling assembly is described. The sampling assembly comprises an input, a light source unit, at least one deflector unit, and a light receiver. The input is configured to receive an electrical input signal. The light source unit is configured to generate and output a light beam in the direction of the deflector unit. The light source unit is configured to adapt an intensity of the light beam based on an amplitude of the input signal. The deflector unit is configured to obtain a deflection command signal. The deflector unit further is configured to deflect the light beam into at least one spatial direction based on the deflection command signal. The light receiver comprises at least two photosensitive pixels. The light receiver is configured to receive the light beam via at least one of the at least two photosensitive pixels, and the light receiver is configured to convert received light into an electrical output signal. Further, a testing instrument is described.

Abstract: Apparatus (e.g., ion source), systems (e.g., residual gas analyzer), and methods provide extended life and improved analytical stability of mass spectrometers in the presence of contamination gases while achieving substantial preferential ionization of sampled gases over internal background gases. One embodiment is an ion source that includes a gas source, nozzle, electron source, and electrodes. The gas source delivers gas via the nozzle to an evacuated ionization volume and is at a higher pressure than that of the evacuated ionization volume. Gas passing through the nozzle freely expands in an ionization region of the ionization volume. The electron source emits electrons through the expanding gas in the ionization region to ionize at least a portion of the expanding gas. The electrodes create electrical fields for ion flow from the ionization region to a mass filter and are located at distances from the nozzle and oriented to limit their exposure to the gas.

Abstract: An X-ray tube includes a cathode and an anode. The cathode is configured to generate an electron beam. The anode has at least one hole that faces the electron beam, the hole having sidewalls and a floor. The electron beam impinges on one or more of the sidewalls of the at least one hole so as to emit a first X-ray beam at angles that are not orthogonal to a surface of the anode. The electron beam also impinges on the floor of the at least one hole so as to emit a second X-ray beam, at least some of which is emitted at an angle that is orthogonal to the surface of the anode.

Abstract: A cathode element for a microfocus x-ray tube includes a heatable filament formed of a wire for thermionic emission of electrons for generating an electron beam. The filament, in a source area of the electron beam, has an elongate extension in two directions perpendicular to the electron beam.

Abstract: Proposed is an illumination device (100), comprising a light source (110) such as an LED or a laser diode, a wavelength conversion medium (120) such as a phosphor, and a periodic antenna array (300) made of a highly polarisable material such as a metal. The light source emits primary wavelength light that at least partially is converted in secondary wavelength light by the wavelength conversion medium. The periodic antenna array is positioned in close proximity to the wavelength conversion medium and functions to enhance the efficiency of the absorption and/or emission processes in the wavelength conversion medium through the coupling of the incident primary wavelength light or the emitted secondary light to surface lattice resonances that arise from the diffractive coupling of localized surface plasmon polaritons in the individual antennas of the array.

Abstract: In a pattern inspection of a semiconductor circuit, to specify a cause of a process defect, not only a distribution on and across wafer of the number of defects but also more detailed, that is, the fact that how many defects occurred where on the semiconductor pattern is needed to be specified in some cases. Accordingly, the present invention aims to provide an apparatus capable of easily specifying a cause of a process defect based upon a positional relationship of a distribution of defect occurrence frequency and a pattern.

Abstract: An electron beam inspection device observes a sample by irradiating the sample set on a stage with electron beams and detecting the electron beams from the sample. The electron beam inspection device has one electron column which irradiates the sample with the electron beams, and detects the electron beams from the sample. In this one electron column, a plurality of electron beam irradiation detecting systems are formed which each form electron beam paths in which the electron beams with which the sample is irradiated and the electron beams from the sample pass. The electron beam inspection device inspects the sample by simultaneously using a plurality of electron beam irradiation detecting systems and simultaneously irradiating the sample with the plurality of electron beams.

Abstract: In accordance with an embodiment, a sample analyzing apparatus includes a charged beam generating unit, a detecting unit, and an analyzing unit. The charged beam generating unit is configured to generate a charged beam and apply the charged beam to a sample. The detecting unit is configured to detect charged particles and then output a signal, the charged particles being generated from the sample by the application of the charged beam in a manner depending on a three-dimensional structure and material characteristics of the sample. The analyzing unit is configured to process the signal to analyze the sample.

Abstract: Provided is a scanning electron microscope equipped with a high-speed and high-precision astigmatism measuring means to be used when both astigmatism generated by an electron-beam column and astigmatism generated from the surroundings of a measuring sample exist. This scanning electron microscope is characterized in controlling an astigmatism corrector (201) with high-speed and high-precision, to correct the astigmatism, by using both a method of obtaining the astigmatism from the qualities of two-dimensional images to be acquired upon changing the intensity of the astigmatism corrector (201), and a method of measuring the astigmatism from the change in the position displacement of an electron beam that occurs when the electron beam is tilted using a tilt deflector (202).

Abstract: Nano-antennas with a resonant frequency in the optical or near infrared region of the electromagnetic spectrum and methods of making the nano-antennas are described. The nano-antenna includes a porous membrane, a plurality of nanowires disposed in the porous membrane, and a monolayer of nanospheres each having a diameter that is substantially the same as a diameter of the nanowires. The nanospheres are electrically in series with the nanowires.

Abstract: The present invention provides a scanning charged particle beam device including a sample chamber (8) and a detector. The detector has: a function of detecting light at least ranging from the vacuum ultraviolet region to the visible light region, of light (17) having image information which is obtained by a light emission phenomenon of gas scintillation when the sample chamber is controlled to a low vacuum (1 Pa to 3,000 Pa); and a function of detecting ion currents (11, 13) having image information which are obtained by cascade amplification of electrons and gas molecules. Accordingly, it becomes possible to realize a device which can deal with observation of various samples. Further, an optimal configuration of the detection unit is devised, to thereby make it possible to add value to an obtained image and provide users in wide-ranging fields with the observation image.

Abstract: A method for generating a cathodoluminescence map comprising the steps of: generating an intensity modulated charged particle beam; focusing said charged particle beam on a specimen; gating temporally the cathodoluminescence emitted by said specimen to provide time-gated cathodoluminescence; measuring the time-gated cathodoluminescence for different charged particle beam positions on the specimen to generate a cathodoluminescence map; deconvoluting the cathodoluminescence map to improve the resolution of said cathodoluminescence map. The invention further provides devices for carrying out such methods.

Abstract: It is an object of the present invention to provide a technique capable of accurately inspecting a circuit pattern in which the contrast of an observation image is not clear, like a circuit pattern having a multilayer structure. A pattern inspection method according to the present invention divides a circuit pattern using the brightness of a reflection electron image and associates the region in the reflection electron image belonging to each division with the region in a secondary electron image.

Abstract: The invention pertains to a direct write lithography system comprising: A converter comprising an array of light controllable electron sources, each field emitter being arranged for converting light into an electron beam, the field emitters having an element distance between each two adjacent field emitters, each field emitter having an activation area; A plurality of individually controllable light sources, each light source arranged for activating one field emitter; Controller means for controlling each light source individually; Focusing means for focusing each electron beam from the field emitters with a diameter smaller than the diameter of a light source on an object plane.

Abstract: There is provided a technology which allows SEM observation in real time without deteriorating the processing efficiency in FIB processing. In the present invention, a composite charged-particle-beam apparatus having a FIB column and a SEM column includes an SE3 detector which detects secondary electrons (referred to as tertiary electrons in this specification) discharged when back-scattered electrons generated by irradiating a sample with an electron beam collide with structures in a sample chamber. With use of the tertiary electrons, a SEM image is generated, and based on the SEM image, an ion beam processing state can be observed.

Abstract: Disclosed is a charged particle beam device, wherein multibeam secondary electron detectors (121a, 121b, 121c) and a single beam detector (140; 640) are provided, and under the control of a system control unit (135), an optical system control circuit (139) controls a lens and a beam selecting diaphragm (141) and switches the electrooptical conditions between those for multibeam mode and those for single beam mode, thereby one charged particle beam device can be operated as a multibeam charged particle device and a single beam charged particle device by switching. Thus, observation conditions are flexibly changed in accordance with an object to be observed, and a sample can be observed with a high accuracy and high efficiency.

Abstract: A system and a method for material analysis of a microscopic element, the method comprising: illuminating an area that includes at least a portion of the microscopic element by a charged particle beam, detecting particles that are generated in the area in response to the charged particle beam and analyzing the detected particles to provide an indication about a material characteristic of the microscopic element, wherein the operation of illumination is implemented as a sequence of displacement compensation determination periods, each provided between consecutive material analysis periods, the method further comprising evaluating during a displacement compensation determination period, a displacement of the charged particle beam with respect to the microscopic element and during a consecutive material analysis period applying a spatial adjustment measure as required, thereby compensating for a drift of the charged particle beam.

Abstract: A method for generating a cathodoluminescence map comprising the steps of: generating an intensity modulated charged particle beam; focusing said charged particle beam on a specimen; gating temporally the cathodoluminescence emitted by said specimen to provide time-gated cathodoluminescence; measuring the time-gated cathodoluminescence for different charged particle beam positions on the specimen to generate a cathodoluminescence map; deconvoluting the cathodoluminescence map to improve the resolution of said cathodoluminescence map. The invention further provides devices for carrying out such methods.

Abstract: In the case where a specimen is imaged by a scanning electron microscope, it is intended to acquire an image of a high quality having a noise component reduced, thereby to improve the precision of an image processing. The intensity distribution of a beam is calculated on the basis of an imaging condition or specimen information, and an image restoration is performed by using a resolving power deterioration factor other than the beam intensity distribution as a target of a deterioration mode, so that a high resolving power image can be acquired under various conditions. In the scanning electron microscope for semiconductor inspections and semiconductor measurements, the restored image is used for pattern size measurement, defect detections, defect classifications and so on, so that the measurements can be improved in precision and so that the defect detections and classifications can be made high precise.

Abstract: The present disclosure provides an ion detector for improving the effect of electric field for pulling in an ion to be detected to a first-stage electrode of a secondary electron multiplier (SEM), and improving the effect of a stray light reduction. In one example embodiment, an ion detector includes a SEM, and a lead-in electrode for pulling in an ion to a first-stage electrode side of the SEM. At least one of the area of the lead-in electrode and a potential difference between the lead-in electrode and neighboring electrodes of the lead-in electrode, the neighboring electrode being an electrode not of the SEM, is set so that the light amount of internal-stray light generated inside the detector entering the first-stage electrode is not more than that of external-stray light generated outside the detector entering the first-stage electrode, when an ion is introduced into the detector.

Abstract: A radioactive ray generating apparatus includes a second shielding member, a target, and a first shielding member, which are sequentially disposed from an electron emission source side. A shortest distance from a maximum radiation intensity portion of the target to the first shielding member is shorter than a shortest distance from the maximum radiation intensity portion of the target to the second shielding member.

Abstract: The present invention provides a scanning charged particle beam device including a sample chamber (8) and a detector. The detector has: a function of detecting light at least ranging from the vacuum ultraviolet region to the visible light region, of light (17) having image information which is obtained by a light emission phenomenon of gas scintillation when the sample chamber is controlled to a low vacuum (1 Pa to 3,000 Pa); and a function of detecting ion currents (11, 13) having image information which are obtained by cascade amplification of electrons and gas molecules. Accordingly, it becomes possible to realize a device which can deal with observation of various samples. Further, an optimal configuration of the detection unit is devised, to thereby make it possible to add value to an obtained image and provide users in wide-ranging fields with the observation image.

Abstract: A dual beam system provides for operation of a focused ion beam in the presence of a magnetic field from an ultra-high resolution electron lens. The ion beam is deflected to compensate for the presence of the magnetic field.

Abstract: A light-emitting body of rapid speed of response and high light emission intensity, and an electron beam detector, scanning electron microscope and mass spectroscope using this are provided. In the light-emitting body 10 according to the present invention, when fluorescence is emitted by a nitride semiconductor layer 14 formed on one face 12a of a substrate 12 in response to incidence of electrons, at least some of this fluorescence is transmitted through this substrate 12, whereby that fluorescence is emitted from the other face 12b of the substrate. The response speed of this fluorescence is not more than ?sec order. Also, the intensity of emission of this fluorescence is almost identical to that of a conventional P47 phosphor. Specifically, with this light-emitting body 10, a response speed and light emission intensity are obtained that are fully satisfactory for application to a scanning electron microscope or mass spectroscope.

Abstract: It is provided a charged particle beam device for inspecting a specimen, comprising a charged particle beam source adapted to generate a primary charged particle beam; an objective lens device adapted to direct the primary charged particle beam onto the specimen; and a detector device comprising one or more charged particle detectors adapted to detect a secondary charged particle beam generated by the primary charged particle beam at the specimen and passing through the objective lens device, the secondary charged particle beam comprising a first group of secondary charged particles starting from the specimen with high starting angles and a second group of secondary charged particles starting from the specimen with low starting angles; wherein at least one of the charged particle detectors is adapted to detect depending on the starting angles one group of the first and the second groups of secondary charged particles.

Abstract: A direct write lithography system. The system includes a converter having an array of light controllable electron sources, each field emitter being arranged for converting light into an electron beam, the field emitters having an element distance between each two adjacent field emitters, each filed emitter having an activation area. A plurality of individually controllable light sources, each light source arranged for activating one field emitter. A controller controls each light source individually. Each electron beam is focused from the field emitters with a diameter smaller than the diameter of a light source on an object plane.

Abstract: A charged particle beam impinging on a specimen is set to have left and right tilt angles corresponding to a parallactic angle. A control unit is provided which scans the beam over the specimen while giving a left tilt and a right tilt corresponding to the parallactic angle alternately to the beam on each scanning line. In this way, images are acquired. A three-dimensional image in which deterioration of the resolution is suppressed is displayed in real time by combining aberration cancellation means with the control of the beam according to the parallactic angle. The aberration cancellation means uses an optical system having plural stages of lenses to provide overall cancellation of aberrations by making use of the action of a lens to deflect the beam back to the optical axis.

Abstract: In the case where a specimen is imaged by a scanning electron microscope, it is intended to acquire an image of a high quality having a noise component reduced, thereby to improve the precision of an image processing. The intensity distribution of a beam is calculated on the basis of an imaging condition or specimen information, and an image restoration is performed by using a resolving power deterioration factor other than the beam intensity distribution as a target of a deterioration mode, so that a high resolving power image can be acquired under various conditions. In the scanning electron microscope for semiconductor inspections and semiconductor measurements, the restored image is used for pattern size measurement, defect detections, defect classifications and so on, so that the measurements can be improved in precision and so that the defect detections and classifications can be made high precise.

Abstract: An electron beam device comprises: a beam emitter for emitting a primary electron beam; an objective electron lens for focusing the primary electron beam onto a specimen, the objective lens defining an optical axis; a beam separator having a first dispersion for separating a signal electron beam from the primary electron beam; and a dispersion compensation element. The dispersion compensation element has a second dispersion, the dispersion compensation element being adapted for adjusting the second dispersion independently of an inclination angle of the primary beam downstream of the dispersion compensation element, such that the second dispersion substantially compensates the first dispersion. The dispersion compensation element is arranged upstream, along the primary electron beam, of the beam separator.

Abstract: A charged particle beam device is provided. The device includes a primary objective lens for focusing a primary charged particle beam, the primary objective lens defining an optical axis, a specimen stage defining a specimen location area, a deflection unit for deflecting the primary charged particle beam between the primary objective lens and the specimen location area, towards a beam path for impingement on the specimen, wherein the deflection unit is movable with respect to the optical axis.

Abstract: A system for providing a compensated Auger spectrum, the system includes: a processor, adapted to generate a compensated Auger spectrum in response to a non-compensated Auger spectrum and in response to an electric potential related parameter, and an interface to an electron detector that is adapted to detect electrons emitted from the first area, wherein the interface is connected to the processor, and wherein the electric potential related parameter reflects a state of a first area of an object that was illuminated by a charged particle beam during the generation of the non-compensated Auger spectrum.

Abstract: A light-emitting body of rapid speed of response and high light emission intensity, and an electron beam detector, scanning electron microscope and mass spectroscope using this are provided. In the light-emitting body 10 according to the present invention, when fluorescence is emitted by a nitride semiconductor layer 14 formed on one face 12a of a substrate 12 in response to incidence of electrons, at least some of this fluorescence is transmitted through this substrate 12, whereby that fluorescence is emitted from the other face 12b of the substrate. The response speed of this fluorescence is not more than ?sec order. Also, the intensity of emission of this fluorescence is almost identical to that of a conventional P47 phosphor. Specifically, with this light-emitting body 10, a response speed and light emission intensity are obtained that are fully satisfactory for application to a scanning electron microscope or mass spectroscope.

Abstract: The present invention provides systems, devices, device components and structures for modulating the intensity and/or energies of electrons, including a beam of incident electrons. In some embodiments, for example, the present invention provides nano-structured semiconductor membrane structures capable of generating secondary electron emission. Nano-structured semiconductor membranes of this aspect of the present invention include membranes having an array of nanopillar structures capable of providing electron emission for amplification, filtering and/or detection of incident radiation, for example secondary electron emission and/or field emission. Nano-structured semiconductor membranes of the present invention are useful as converters wherein interaction of incident primary electrons and nanopillars of the nanopillar array generates secondary emission.

Abstract: Novel components reduce background noise caused by secondary ions generated by metastable entity bombardment in a mass spectrometric system. Layered structures for exit electrodes and deflector plates confine secondary ions in a local low-energy well, preventing them from entering the detector.

Abstract: The invention discloses a charged particle detecting apparatus for detecting positive ions, negative ions and electrons emitted from a sample, the apparatus comprising a housing, defining a chamber in its interior, which is confined by conductive walls, and has an opening to the outside of said housing; a grid for selectively attracting charged particles, wherein the grid is electrically biasable with respect to said housing and functionally aligned with said opening; a converter arrangement with a converter surface, which is electrically biasable with respect to the grid and with respect to the housing, and which is positioned such that charged particles attracted into the chamber by the grid impact on the converter surface; an electron detector, which is biasable with respect to the converter surface in such a way that electrons emitted from the converter surface impact on the electron detector.

Abstract: A charged particle beam instrument (10) is provided, the instrument comprising a charged particle optical column (12), a voltage source, a detector (14) and a sample holder (18), the column (12) being operable to direct a beam of primary charged particles at a sample (20) on the sample holder (18) to cause secondary charged particles to be released from the sample, the voltage source being operable to establish in the vicinity of the sample an electric field that has a component that draws the secondary charged particles towards the detector (14), and the detector being operable to detect secondary charged particles, wherein the instrument further comprises a further voltage source (16) variable between a first voltage that establishes a component of the electric field that draws the secondary charged particles away from the sample, so as to prevent at least some of them from colliding with the sample (20) or sample holder (18), and a second voltage that establishes a component of the electric field that draw

Abstract: In a scanning electron microscope, a reflection plate at ground potential is provided in a specimen chamber and backscattering electrons given off from a specimen impinge on the reflection plate to generate subsidiary electrons. An electric field supply electrode applied with a positive voltage of +100 to +500V is arranged in a gap defined by the reflection plate and a specimen stage. A first detection electrode is arranged to detect ion current attributable to backscattering electrons and a second detection electrode is arranged to detect current representative of coexistence of ion currents attributable to secondary electron and backscattering electron. The scanning electron microscope constructed as above can achieve simultaneous separation/detection of secondary electron and backscattering electron.

Abstract: When using micro-resonant structures which are being excited and caused to resonate by use of a charged particle beam, whether as emitters or receivers, especially in a chip or circuit board environment, it is important to prevent the charged particle beam from coupling to or affecting other structures or layers in the chip or circuit board. Shielding can be provided along the path of the charged particle beam, on top of the substrate, to prevent such coupling.

Abstract: Electrification affected on a surface of a sample which is caused by irradiation of a primary charged particle beam is prevented when plural frames are integrated to obtain an image of a predetermined area of the sample in a charged particle beam apparatus. The predetermined area of the sample is scanned with a primary electron beam from an electron gun, and plural frames are generated and integrated while detecting generated secondary electrons with a detector to obtain the image of the predetermined area. If it is determined by a detection signal of the detector that an electrification amount at the predetermined area becomes a specified value when generating plural frames, an electricity removal voltage is applied to a boosting electrode to remove or reduce the electrification, prior to generation of the next frame. Accordingly, the signal-to-noise ratio of the image obtained by integrating plural frames can be improved.

Abstract: An irradiating device and a method for controlling it are provided. The device comprises an electron accelerator and a scanning box connected to the electron accelerator, wherein the scanning box is provided with a target, an electron beam exit window positioned at left or right side of the target and a scanning magnet. The device integrates the functions of both the existing irradiating device outputting electron beams and those outputting X-rays. When the scanning magnet is in operation, the irradiating device outputs electron beams; and when the scanning magnet is not in operation, the irradiating device outputs X-rays. Therefore, the device is capable of outputting two radiation sources so as to meet requirements for radiation-processing articles with different sizes.

Abstract: A technique for confining secondary electrons on a wafer is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for confining secondary electrons in plasma-based ion implantation. The apparatus and method may comprise a magnetic field portion of a magnetic field configuration placed under a target wafer for generating a magnetic field above the target wafer for confining secondary electrons on the target wafer. The apparatus and method may also comprise a magnetic field above the target wafer that is substantially parallel to an upper surface of the target wafer. The apparatus and method may additionally comprise a magnetic field portion comprising at least one of a plurality of coils, one or more current-carrying wires, and a plurality of magnets.

Abstract: A dual beam system includes an ion beam system and a scanning electron microscope with a magnetic objective lens. The ion beam system is adapted to operate optimally in the presence of the magnetic field from the SEM objective lens, so that the objective lens is not turned off during operation of the ion beam. An optional secondary particle detector and an optional charge neutralization flood gun are adapted to operate in the presence of the magnetic field. The magnetic objective lens is designed to have a constant heat signature, regardless of the strength of magnetic field being produced, so that the system does not need time to stabilize when the magnetic field is changed.

Abstract: An inspection and measurement method and apparatus for semiconductor devices and patterns such as photomasks using an electron beam capable of measuring the potential of a sample with higher precision than conventional systems. When an S curve is observed in a semiconductor device to be inspected, fluctuations of the potential of the inspection sample surface are suppressed by optimizing the energy of a primary electron beam used for irradiation. When the surface potential of the semiconductor device is measured, a more precise measurement can be obtained without adverse effects from an insulation film surface. Further, the surface potential can be measured without installing a special apparatus for wafer surface potential measurement such as an energy filter, so the cost of the apparatus can be reduced.

Abstract: Nanoantennas are formed on a substrate (e.g., silicon) and generate light via interactions with a charged particle beam, where the frequency of the generated light is based in large part on the periodicity of the “fingers” that make up the nanoantennas. Each finger has typical dimensions of less than 100 nm on the shorter side and typically less than 500 nm on the longer, but the size of the optimal longer side is determined by the electron velocity. The charged particle may be an electron beam or any other source of charged particles. By utilizing fine-line lithography on the surface of the substrate, the nanoantennas can be formed without the need for complicated silicon devices.

Abstract: An electron-beam size measuring apparatus includes: electron beam irradiating means that irradiates an electron beam on a surface of a sample; detection means that detects electrons emitted from the sample; distance measurement means that measures the distance between the sample and a secondary electron control electrode of the detection means; a stage on which the sample is mounted; and control means which adjusts the height of the stage so that the distance measured by the distance measurement means would be equal to a predetermined fixed distance, which applies a control voltage to the secondary electron control electrode of the detection means, the control voltage predetermined so as to allow the sample surface potential to become constant with the sample positioned at the fixed distance, and which causes the electron beam to be irradiated by applying a predetermined accelerating voltage.

Abstract: A charged particle beam apparatus for acquiring high-definition and highly contrasted observation images by detecting efficiently secondary signals without increasing aberration of the primary electron beam, detecting defects from observation images and thus increasing the inspection speed and enhancing the sensitivity of inspection. The desired area of the sample is scanned with a primary charged particle beam, and the secondary charged particles generated secondarily from the area by the irradiation of the primary charged particle beam are led to collide with the secondary electron conversing electrode, and then the secondary electrons generated by the first E×B deflector 31 arranged through an insulator on the surface of the secondary electron conversing electrode on the side of the sample is absorbed by the detector.

Abstract: Apparatus and method for trapping uncharged multi-pole particles comprises a bound cavity for receiving the particles, and a multiplicity of electrodes coupled to the cavity for producing an electric field in the cavity. In a preferred embodiment, the electrodes are configured to produce in the electric field potential both a multi-pole (e.g., dipole) component that aligns the particles predominantly along an axis of the cavity and a higher order multi-pole (e.g., hexapole) component that forms a trapping region along the axis. In one embodiment, the electrodes and/or the particles are cooled to a cryogenic temperature.

Abstract: A charge control electrode emitting photoelectrons is disposed just above a wafer (sample) in parallel thereto, and the electrode has a through hole so that ultraviolet light can be irradiated to the wafer through the charge control electrode. Specifically, a metal plate which is formed in mesh or includes one or plural holes is used as the charge control electrode. By disposing the charge control electrode just above the sample in parallel thereto, when negative voltage is applied to the electrode, electric field approximately perpendicular to the wafer is generated. Therefore, photoelectrons are efficiently absorbed in the wafer. Also, by using the charge control electrode having approximately the same size as that of the wafer, charges on a whole surface of the wafer can be removed collectively and uniformly. Therefore, time required for the process can be reduced.

Abstract: An electron beam (4) to be irradiated onto a sample (10) is two-dimensionally scanned by a scanning coil (9), and secondary electrons generated from the sample (10) by the scanning are detected by a secondary electron detector (13). A deflection coil (15) for image shifting is used for electrically deflecting the primary electron beam to shift a field of view for image shift in an arbitrary direction by an arbitrary amount. By the image shift, the primary electron beam (4) to be irradiated onto the sample is energy dispersed to degrade the resolution. However, an E×B field producer (30) for dispersion control gives the primary electron beam energy dispersion in the opposite direction and having the equal magnitude. Therefore, the energy dispersion produced in the primary electron beam by the image shift is automatically corrected.

Abstract: An ion implantation system utilizing detected ion induced luminescence as feedback control that comprises, a wafer, a spectrometer, a photodetector, an ion source generator, wherein the ion source generator is configured to implant the wafer with ions, and the photodetector is configured to detect ion induced luminescence both on and off the wafer.