Abstract: A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a plurality of independently controlled thermal zones so that the temperature of different regions of the workpiece may be separately controlled. In certain embodiments, etch rate uniformity may be a function of distance from the center of the workpiece, also referred to as radial non-uniformity. Further, when the workpiece is scanned, there may also be etch rate uniformity issues in the translated direction, referred to as linear non-uniformity. The present workpiece holder comprises a plurality of independently controlled thermal zones to compensate for both radial and linear etch rate non-uniformity.

Abstract: According to one embodiment, a registration mark includes a first step portion and a second step portion. The first step portion includes a plurality of first steps which descend step by step in a first direction from a surface of a substrate or a layer formed on the substrate. The second step portion includes a plurality of second steps which descend step by step from the surface in a second direction different from the first direction and have the same number as the number of the plurality of first steps, is spaced apart from the first step portion, and is disposed rotationally symmetrically to the first step portion.

Abstract: A method includes forming a resist pattern, the resist pattern having trenches oriented lengthwise along a first direction and separated by resist walls along both the first direction and a second direction perpendicular to the first direction. The method further includes loading the resist pattern into an ion implanter so that a top surface of the resist pattern faces an ion travel direction, and tilting the resist pattern so that the ion travel direction forms a tilt angle with respect to an axis perpendicular to the top surface of the resist pattern. The method further includes rotating the resist pattern around the axis to a first position; implanting ions into the resist walls with the resist pattern at the first position; rotating the resist pattern around the axis by 180 degrees to a second position; and implanting ions into the resist walls with the resist pattern at the second position.

Abstract: A scanning system includes a scanning chamber; a first rotary drive disposed in the scanning chamber and configured to rotate around a first axis; a second rotary drive disposed in the scanning chamber and configured to rotate around the first axis synchronously with the first rotary drive; and a bar-and-hinge system disposed in the scanning chamber and mechanically coupled to a substrate holder, the hinge system configured to translate a rotary motion of the first rotary drive and the second rotary drive to a planar motion of the substrate holder.

Abstract: An electron source emits an electron beam. The electron beam is received by a beam limiting assembly. The beam limiting assembly has a first beam limiting aperture with a first diameter and a second beam limiting aperture with a second diameter larger than the first diameter. The first beam limiting aperture receives the electron beam. This beam limiting assembly reduces the influence of Coulomb interactions.

Abstract: A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.

Abstract: The present invention realizes a composite charged particle beam apparatus capable of suppressing a leakage magnetic field from a pole piece forming an objective lens of an SEM with a simple structure. The charged particle beam apparatus according to the present invention obtains an ion beam observation image while passing a current to a first coil constituting the objective lens, and performs an operation of reducing the image shift by passing a current to a second coil with a plurality of current values, and determines a current to be passed to the second coil based on a difference between the operations.

Abstract: Provided is a charged particle beam device using a detector that detects electromagnetic waves, in which a circumstance in a sample chamber can be checked, and a sample is observed with the detector at the same time.

Abstract: An enclosure comprising a housing having a first end and a second end opposite the first end, the housing having a first connector receptacle at the first end, the housing having a surface defining a robot-engaging mechanism, a hook extending from the second end of the housing, and a securement mechanism at the second end of the housing.

Abstract: In one embodiment, a charged particle beam writing method is for writing a pattern in a writing area on a substrate by irradiating a charged particle beam onto the substrate while moving the substrate to write stripes sequentially, each of the stripes having a width W and shapes obtained by dividing the writing area by the width W. The method includes performing S times (S is an integer greater than or equal to two) strokes, each of the strokes which is a process writing the stripes in a multiplicity of 2n (n is an integer greater than or equal to one) while shifting a reference point of each of the stripes in the width direction by a preset stripe shift amount and changing a moving direction of the substrate for each of the stripes, and writing while the reference point of the stripes in the each of the strokes in the width direction of the stripes is shifted by a preset stroke shift amount in each of the strokes.

Abstract: An on-axis, angled, rotator device is disclosed. The rotator device may include a container containing a slot for receiving a sample. An angle of the slot may be configured to be between 0 and 180 degrees relative to a perpendicular irradiation plane of a radiation device. The rotator device may include a cup positioned within an opening of the container. Additionally, the rotator device may include a driveshaft configured to transmit torque to cause the cup to be rotated when the cup is positioned within the opening. When the sample resides within the slot and the driveshaft transmits the torque to the cup, the cup may cause the sample to rotate about a center axis of the sample. The angle of the slot containing the sample and the rotation of the sample about the center axis may facilitate uniform radiation exposure to the sample when the radiation device emits radiation.

Abstract: A multi-beam particle beam system includes a multi-aperture plate having a multiplicity of apertures. During operation, one particle beam of the plurality of particle beams passes through each of the apertures. A multiplicity of electrodes are insulated from the second multi-aperture plate to influence the particle beam passing through the aperture. A voltage supply system for the electrodes includes: a signal a generator to generate a serial sequence of digital signals; a D/A converter to convert the digital signals into a sequence of voltages between an output of the D/A converter and the multi-aperture plate; and a controllable changeover system, which feeds the sequence of voltages successively to different electrodes.

Abstract: A coating for a medical device or appliance may include a fluoropolymer and a polyimide. Such coatings may provide a lubricious exterior surface that facilitates insertion or displacement of a medical device in a body lumen. Some coatings that include a fluoropolymer and a polyimide may, among other functions and characteristics, provide increased strength and/or durability relative to some other coatings.

Abstract: A devices (10) and method for pasteurizing and/or sterilizing particulate material. The device contain at least one electron source (20) for generating an electron beam and a treatment zone (19) in which the material is pasteurized and/or sterilized by the electron beam. The device (10) comprises a vibration surface (11) which vibrates to convey and individualize the material. The first vibration surface (11) has a plurality of grooves (12) into which the material is conveyed and individualized. The device (10) has a material channel (21) in which the material is pasteurized and/or sterilized by the electron beam in the region of the treatment zone (19). The device (10) has at least one auxiliary channel (22) through which a fluid flows, between the electron source (20) and the material channel (21), and is separated from the material channel (21). A cartridge (24) for pasteurizing and/or sterilizing particulate material is also disclosed.

Abstract: A multiple electron beam irradiation apparatus includes a shaping aperture array substrate to form multiple primary electron beams, a plurality of electrode array substrates stacked each to dispose thereon a plurality of electrodes each arranged at a passage position of each of the multiple primary electron beams, each of the multiple primary electron beams surrounded by an electrode of the plurality of electrodes when each of the multiple primary electron beams passes through the passage position, the first wiring and the second wiring applied with one of different electric potentials, and a stage to mount thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode array substrates, wherein, in each of the plurality of electrode array substrates, each of the plurality of electrodes is electrically connected to either one of the first wiring and the second wiring.

Abstract: A beam profile determination method and ion implantation apparatus implanting the same is provided. The method includes measuring a beam profile of an ion beam in a direction orthogonal to a scanning direction of a substrate and a traveling direction of the ion beam; computing, based on the measured beam profile, a uniformity of a dose distribution of a part of the ion beam with which a surface of the substrate is irradiated when the substrate is scanned; and comparing the computed uniformity of the dose distribution with a first reference value to determine an adequacy of the beam profile of the ion beam.

Abstract: A method for scanning a sample by a charged particle beam tool is provided. The method includes providing the sample having a scanning area including a plurality of unit areas, scanning a unit area of the plurality of unit areas, blanking a next unit area of the plurality of unit areas adjacent to the scanned unit area, and performing the scanning and the blanking the plurality of unit areas until all of the unit areas are scanned.

Abstract: A method and apparatus to measure a target (e.g., an alignment mark (e.g., on a substrate)) is disclosed. Relative movement between the target and a measurement spot of a measurement system in a “fly-in” direction (e.g., movement of the target towards the measurement spot) is performed so that a first measurement for the target can be made. Thereafter, relative movement between the target and the measurement spot is made in an opposite “fly-in” direction so that a second measurement for the target can be made. By combining (e.g., averaging) these two measurements, an error is cancelled out, and higher accuracy in the measurement may be achieved.

Abstract: A ridge filter 100 provided in a particle therapy system includes a repeating structure body 101 having a plurality of extending parts 101c extending along the incident direction P of a proton beam 204, and a bottom plate 102 provided on the lower face 101b side opposite to the incident side of the proton beam 204 of the repeating structure body 101. In addition, the repeating structure body 101 and the bottom plate 102 are integrally formed by a molding method, and each of the repeating structure body 101 and the bottom plate 102 is formed of a laminate of resin.

Abstract: An ion implanter having a beam park device on the way of a beamline through which an ion beam is transported toward a wafer is provided. The beam park device includes a pair of park electrodes which faces each other across the beamline, and a beam dump which is provided away from the beamline in a facing direction of the pair of park electrodes and on a downstream side of the pair of park electrodes in a beamline direction. At least one of the pair of park electrodes includes a plurality of electrode bodies which are disposed to be spaced apart from each other in a predetermined direction perpendicular to both a direction in which the beamline extends and the facing direction, and each of the plurality of electrode bodies extends from an upstream side toward the downstream side in the beamline direction.

Abstract: A radiation therapy system includes an accelerator and beam transport system that generates a beam of particles. The accelerator and beam transport system guides the beam on a path and into a nozzle that is operable for aiming the beam toward an object. The nozzle includes a scanning magnet operable for steering the beam toward different locations within the object, and also includes a beam energy adjuster configured to adjust the beam by, for example, placing different thicknesses of material in the path of the beam to affect the energies of the particles in the beam.

Abstract: The present disclosure relates to an X-ray source apparatus and a control method of the X-ray source apparatus in which a cathode electrode and a gate electrode are arranged in an array form to enable matrix control, and, thus, it is possible to irradiate X-rays at an optimum dose for each position on the subject. Therefore, it is possible to suppress the irradiation of more X-rays than are needed to the subject. Also, it is possible to obtain a high-resolution and high-quality X-ray image. As such, two-dimensional matrix control makes it easy to control the dose of X-rays and makes it possible to uniformly irradiate X-rays to the subject. Therefore, it is possible to manufacture a high-resolution surface X-ray source with less dependence on the size of the focus of electron beams.

Abstract: A light generation system is provided. The light generation system includes a vaporization device, a laser device and a lens structure. The vaporization device is configured to vaporize a metal-nonmetal compound to generate a metal-nonmetal precursor gas. The laser device is configured to provide laser light, and irradiate the metal-nonmetal precursor gas released from the vaporization device with the laser light to emit a light signal. The lens structure is configured to direct the light signal toward a photomask used in a lithography process.

Abstract: In one embodiment, a multi charged particle beam writing apparatus includes a plurality of reflective marks disposed on a stage, an inspection aperture member configured to allow one beam to pass therethrough, a first detector detecting a beam current of a beam passed through the inspection aperture member, a second detector detecting charged particles reflected from the reflective marks, a first beam shape calculator generating a beam image based on the beam currents detected by the first detector and calculating a reference beam shape, and a second beam shape calculator calculating a beam shape based on changes in intensity of the reflected charged particles and a position of the stage. The reference beam shape is calculated before writing. During writing, the beam shape based on reflected charged particles is calculated, and variation of the beam shape is added to the reference beam shape.

Abstract: Devices (10) and methods for pasteurizing and/or sterilizing particulate material. The devices contain at least one electron source (20) for generating an electron beam and a treatment zone (19) in which the material is pasteurized and/or sterilized by the electron beam. The device (10) comprises a vibration surface (11) which vibrates to convey and individualize the material. The first vibration surface (11) has a plurality of grooves (12) into which the material is conveyed and individualized. The device (10) has a good channel (21) in which the material is pasteurized and/or sterilized by the electron beam in the region of the treatment zone (19). The device (10) has at least one auxiliary channel (22) through which a fluid flows between the electron source (20) and the good channel (21) and is separated from the good channel (21). A cartridge (24), for pasteurizing and/or sterilizing particulate material, is also disclosed.

Abstract: Disclosed is a system for irradiating a target. The system includes a particle accelerator configured to at least emit an irradiation beam along an axis, a target-holder mounting outside the accelerator, a radiation-protection enclosure surrounding the target-holder mounting, and a deflection device. The particle accelerator is positioned outside the enclosure. The target-holder mounting includes at least one port configured to receive a target holder for a target to be irradiated. The target-holder mounting is stationary relative to the particle accelerator. The port is offset relative to the axis of the irradiation beam. The deflection device is positioned in the radiation-protection enclosure and is configured to divert the irradiation beam towards the port of the target holder in which the target to be irradiated is inserted.

Abstract: A positioning system can include a guide, a carrier element configured to engage and convey a workpiece, a motor having a mover element, a restraint coupled to the carrier element, and an actuator disposed between the restraint and the carrier element. The guide can be movable relative to a horizontal reference plane such that the carrier element coupled to the guide is inclined with respect to the horizontal reference plane. At least the mover element of the motor can be coupled to the carrier element and can be configured to move the carrier element along the guide. The restraint can be configured to selectively engage the guide to restrain movement of the carrier element in at least one direction along the guide when the guide is inclined out of the horizontal reference plane. The actuator can be configured to displace the carrier element relative to the restraint along the guide when the restraint is engaged with the guide.

Abstract: One or more pellicles protect a cathode, the pellicles comprised of a thin layer of material that allows electrons to pass while preventing contamination of the cathode from elements originating beyond the pellicle or contamination of an outside apparatus from elements originating on or near the cathode. The pellicle can be supported by an insulator, the insulator in turn supported by a deflecting layer. The pellicle can be maintained at a positive voltage relative to the cathode, such that a voltage gradient is created between the cathode and the pellicle that accelerates electrons emitted by the cathode away from the cathode. The pellicle is located at an appropriate distance from the cathode to allow electron transmission matching the energy of the electrons at that distance.

Abstract: Systems and methods for implementing charged particle flooding in a charged particle beam apparatus are disclosed. According to certain embodiments, a charged particle beam system includes a charged particle source and a controller which controls the charged particle beam system to emit a charged particle beam in a first mode where the beam is defocused and a second mode where the beam is focused on a surface of a sample.

Abstract: A scanning electron microscope (SEM) system includes an SEM objective that emits an electron beam toward a sample, causing emission of charged particles including secondary electrons, Auger electrons, backscattered electrons, anions and cations. The SEM system includes electron optics elements that are configured to establish electric fields around the sample that accelerate charged particles toward a detector. A two-dimensional distribution of locations of incidence of the charged particles on the detector is indicative of energies of the charged particles and their emission angles from the sample. A three-dimensional spatial distribution of charged particles emitted from the sample is recovered by performing an Abel transform over the distribution on the detector. The energies and emission angles of the charged particles are then determined from the three-dimensional spatial distribution.

Abstract: A charged particle beam writing method includes acquiring the deviation amount of the deflection position per unit tracking deflection amount with respect to each tracking coefficient of a plurality of tracking coefficients having been set for adjusting the tracking amount to shift the deflection position of a charged particle beam on the writing target substrate in order to follow movement of the stage on which the writing target substrate is placed, extracting a tracking coefficient based on which the deviation amount of the deflection position per the unit tracking deflection amount is closest to zero among the plurality of tracking coefficients, and writing a pattern on the writing target substrate with the charged particle beam while performing tracking control in which the tracking amount has been adjusted using the tracking coefficient extracted.

Abstract: A method of depositing a variable thickness material includes providing a substrate and providing a shadow mask having a first region with a first aperture dimension to aperture periodicity ratio and a second region with a second aperture dimension to aperture periodicity ratio less than the first aperture dimension to aperture periodicity ratio. The method also includes positioning the shadow mask adjacent the substrate and performing a plasma deposition process on the substrate to deposit the variable thickness material. A layer thickness adjacent the first region is greater than a layer thickness adjacent the second region.

Abstract: An individual beam detector for multiple beams includes a thin film in which a passage hole smaller than a pitch between beams of multiple beams and larger than the diameter of a beam is formed and through which the multiple beams can penetrate, a support base to support the thin film in which an opening is formed under the region including the passage hole, and the width size of the opening is formed to have a temperature of the periphery of the passage hole higher than an evaporation temperature of impurities adhering to the periphery in the case that the thin film is irradiated with the multiple beams, and a sensor arranged, at the position away from the thin film by a distance based on which a detection target beam having passed the passage hole can be detected by the sensor as a detection value with contrast discernible.

Abstract: According to various embodiments, a collimator includes a substrate defining a plurality of channels through the substrate. The substrate includes a first surface and a second surface opposite the first surface. Each of the channels includes a first aperture exposed from the first surface, a second aperture between the first surface and the second surface, and a third aperture exposed from the second surface. The first aperture and the third aperture are larger than the second aperture.

Abstract: One or more pellicles protect a cathode, the pellicles comprised of a thin layer of material that allows electrons to pass while preventing contamination of the cathode from elements originating beyond the pellicle or contamination of an outside apparatus from elements originating on or near the cathode. The pellicle can be supported by an insulator, the insulator in turn supported by a deflecting layer. The pellicle can be maintained at a positive voltage relative to the cathode, such that a voltage gradient is created between the cathode and the pellicle that accelerates electrons emitted by the cathode away from the cathode. The pellicle is located at an appropriate distance from the cathode to allow electron transmission matching the energy of the electrons at that distance.

Abstract: An ion beam irradiation device is provided and including: a substrate holder that holds a substrate; a rotating mechanism that rotates the substrate holder about a center portion of the substrate being held; a reciprocating mechanism that reciprocates the substrate holder and the rotating mechanism in the moving direction; an ion beam irradiator that irradiates the substrate with an ion beam; and a control device that controls the rotating mechanism and the reciprocating mechanism. The ion beam has a center region where the beam current density is a predetermined value or more in the moving direction, and a peripheral region where the beam current density is less than the predetermined value, a center region size in the direction orthogonal to the moving direction is larger than a substrate size in the direction orthogonal to the moving direction.

Abstract: Provided herein are techniques for treating vertical surface features of a semiconductor device with ions. In some embodiments, a method for forming a semiconductor device, may include providing a set of surface features extending from a substrate, the set of surface features including a sidewall. The method may include treating the sidewall with an ion beam disposed at an angle, the angle being a non-zero angle of inclination with respect to a perpendicular to a plane of an upper surface of the substrate. The method may further include rotating the substrate about the perpendicular to the plane while the sidewall is treated with the ion beam to impact an entire height of the sidewall with the ion beam.

Abstract: Biomass (e.g., plant biomass, animal biomass, and municipal waste biomass) is processed to produce useful products, such as fuels. For example, systems can use feedstock materials, such as cellulosic and/or lignocellulosic materials and/or starchy or sugary materials, to produce ethanol and/or butanol, e.g., by fermentation.

Abstract: Methods and systems are described for processing cellulosic and lignocellulosic materials and useful intermediates and products, such as energy and fuels. For example, irradiating methods and systems are described to aid in the processing of the cellulosic and lignocellulosic materials. The electron beam accelerator has multiple windows foils and these foils are cooled with cooling gas. In one configuration a secondary foil is integral to the electron beam accelerator and in another configuration the secondary foil is part of the enclosure for the biomass conveying system.

Abstract: A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first re

Abstract: A multi-beam scanning electron microscopy (SEM) system is disclosed. The system includes an electron beam source configured to generate a source electron beam. The system includes a set of electron-optical elements configured to generate a flood electron beam from the source electron beam. The system includes a multi-beam lens array with a plurality of electron-optical pathways configured to split the flood electron beam into a plurality of primary electron beams, and a plurality of electrically-charged array layers configured to adjust at least some of the plurality of primary electron beams. The system includes a set of electron-optical elements configured to direct at least some of the plurality of primary electron beams onto a surface of a sample secured by a stage. The system includes a detector array configured to detect a plurality of electrons emanated from the surface of the sample in response to the plurality of primary electron beams.

Abstract: An ion implantation system and method are provided where an ion beam is tuned to a first process recipe. The ion beam is scanned along a scan plane at a first frequency, defining a first scanned ion beam. A beam profiling apparatus is translated through the first scanned ion beam and one or more properties of the first scanned ion beam are measured across a width of the first scanned ion, thus defining a first beam profile associated with the first scanned ion beam. The ion beam is then scanned at a second frequency, thus defining a second scanned ion beam, wherein the second frequency is less than the first frequency. A second beam profile associated with the second scanned ion beam is determined based, at least in part, on the first beam profile. Ions are subsequently implanted into a workpiece via the second scanned ion beam.

Abstract: In the present invention, a computed tomography system, an X-ray tube used therein and a cathode assembly disposed in the X-ray tube, as well as an associated method of use, is provided that includes a gantry and the X-ray tube coupled to the gantry. The X-ray tube includes the cathode assembly having a pair of emitters for generating an electron beam, where the pair of emitters are disposed in the casing at angles with respect to one another. The X-ray tube further includes a focusing electrode for focusing the electron beam, an extraction electrode which electrostatically controls the intensity of the electron beam, a target for generating X-rays when impinged upon by the electron beam and a magnetic focusing assembly located between the cathode assembly and the target for focusing the electron beam towards the target.

Abstract: An example particle therapy system includes: a synchrocyclotron to output a particle beam; a magnet to affect a direction of the particle beam to scan the particle beam across at least part of an irradiation target; scattering material that is configurable to change a spot size of the particle beam, where the scattering material is down-beam of the magnet relative to the synchrocyclotron; and a degrader to change an energy of the beam prior to output of the particle beam to the irradiation target, where the degrader is down-beam of the scattering material relative to the synchrocyclotron.

Abstract: A multiple charged particle beam writing apparatus includes a circuitry to calculate, for each of the plurality of combinations, a first distribution coefficient for each of the three beams configuring the combination concerned, for distributing a dose to irradiate the design grid concerned to the three beams such that the gravity center position of each distributed dose coincides with the position of the design grid concerned and the sum of the each distributed dose coincides with the dose to irradiate the design grid concerned; and a circuitry to calculate, for each of the four or more beams, a second distribution coefficient of each of the four or more beams relating to the design grid concerned by dividing the total value of at least one first distribution coefficient corresponding to the beam concerned in the four or more beams by the number of the plurality of combinations.

Abstract: A system that generates short charged particle packets or pulses (e.g., electron packets) without requiring a fast-switching-laser source is described. This system may include a charged particle source that produces a stream of continuous charged particles to propagate along a charged particle path. The system also includes a charged particle deflector positioned in the charged particle path to deflect the stream of continuous charged particles to a set of directions different from the charged particle path. The system additionally includes a series of beam blockers located downstream from the charged particle deflector and spaced from one another in a linear configuration as a beam-blocker grating. This beam-blocker grating can interact with the deflected stream of charged particles and divide the stream of the charged particles into a set of short particle packets. In one embodiment, the charged particles are electrons. The beam blockers can be conductors.

Abstract: An apparatus for monitoring of an ion beam. The apparatus may include a processor; and a memory unit coupled to the processor, including a display routine, where the display routine operative on the processor to manage monitoring of the ion beam. The display routine may include a measurement processor to receive a plurality of spot beam profiles of the ion beam, the spot beam profiles collected during a fast scan of the ion beam and a slow mechanical scan of a detector, conducted simultaneously with the fast scan. The fast scan may comprise a plurality of scan cycles having a frequency of 10 Hz or greater along a fast scan direction, and the slow mechanical scan being performed in a direction parallel to the fast scan direction. The measurement processor may also send a display signal to display at least one set of information, derived from the plurality of spot beam profiles.

Abstract: A device for determining alignment errors of structures which are present on, or which have been applied to a substrate, comprising a substrate holder for accommodating the substrate with the structures and detection means for detecting X-Y positions of first markings on the substrate and/or second markings on the structures by moving the substrate or the detection means in a first coordinate system, wherein in a second coordinate system which is independent of the first coordinate system X?-Y? structure positions for the structures are given whose respective distance from the X-Y positions of the first markings and/or second markings can be determined by the device.

Abstract: Lithographic apparatuses suitable for complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction and having a pitch. Each opening of the first column of openings has a dimension in the first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The second column of openings has the pitch. Each opening of the second column of openings has the dimension in the first direction. A scan direction of the BAA is along a second direction orthogonal to the first direction. The openings of the first column of openings overlap with the openings of the second column of openings by at least 5% but less than 50% of the dimension in the first direction when scanned along the second direction.

Abstract: A system and method for controlling an ion implantation system as a function of sampling ion beam current and uniformity thereof. The ion implantation system includes a plurality of ion beam optical elements configured to selectively steer and/or shape the ion beam as it is transported toward a workpiece, wherein the ion beam is sampled at a high frequency to provide a plurality of ion beam current samples, which are then analyzed to detect fluctuations and/or nonuniformities or unpredicted variations amongst the plurality of ion beam current samples. Beam current samples are compared against predetermined threshold levels, and/or predicted nonuniformity levels to generate a control signal when a detected nonuniformity in the plurality of ion beam current density samples exceeds a predetermined threshold.