Abstract: The present invention is embodied in a method and apparatus for transporting ions via a path generated by RF electrodes having a controllable DC field gradient generated thereon which does not suffer from mass discrimination. In a preferred embodiment, the number of electrodes are doubled to thereby use symmetry to cancel an undesirable DC quadrapole field. By eliminating the DC quadrapole field, the passband of the DC field gradient is increased, allowing for ions of higher mass to be transported. The electrodes are either tilted or tapered to thereby generate the desirable DC field gradient. Tilting and/or tapering the electrodes advantageously modifies the DC field gradient to increase the high ion mass cut-off.

Abstract: A semiconductor manufacturing tool for charged particle lithography systems such as an EBPS comprises a magnetic deflector with a hub comprising a cylinder mounted on flange. The hub has an opening for a particle beam. Grooves on the surface of the flange at the base of the cylinder and slots in the edge of the cylinder support several deflection coil vanes. Each of the vanes is formed of substrate comprising a thin plate which has a left surface and a right surface. Complementary electrical coils are wound as a planar spirals on the left surface and on the right surface of the vanes with a via connection through the plate interconnecting the coils. The series connected, spiral coils are patterned as mirror images so that the magnetic fields from the coils are additive. To accommodate vanes carrying large currents, the plate is quartz and complementary copper conductor spirals are bonded to the sides of the quartz plate.

Abstract: A charge-exchange device is disclosed which is able to considerably reduce, without the use of foils, radio activation caused by a beam deflection angle and, which also implements a further efficiency and reduction of a laser output. The charge-exchange device is provided with an undulator and an optical resonator. The undulator magnetic field which has been generated by the undulator generates the Lorentz electric field by interaction with the relativistic velocity of H.sup.0 neutral beam being injected. The optical resonator amplifies the photon density of the laser beam and causes it to collide against the injected H.sup.0 neutral beam, thereby resonantly exciting the H.sup.0 beam to the principal quantum number of 4. The H.sup.0 beam which has been resonantly excited or excited by the relativistic Doppler effect in the undulator magnetic field is ionized to H.sup.+ ion by the Lorentz electric field.

Abstract: An apparatus and process for accomplishing low-temperature sterilization in a plasma generated using a variety of gas molecules. The plasma is generated using a hollow cathode discharge device of design that permits the device to be of commercially practical size and provides for the generation of moderate but extremely consistent plasma density throughout the chamber, thereby assuring sterilization of all items placed therein.

Abstract: A method and apparatus for focusing dispersed charged particles. More specifically, a series of elements within a region maintained at a pressure between 10.sup.-1 millibar and 1 bar, each having successively larger apertures forming an ion funnel, wherein RF voltages are applied to the elements so that the RF voltage on any element has phase, amplitude and frequency necessary to define a confinement zone for charged particles of appropriate charge and mass in the interior of the ion funnel, wherein the confinement zone has an acceptance region and an emmitance region and where the acceptance region area is larger than the emmitance region area.

Abstract: An electron beam lens has a magnetic lens provided with first and second pole pieces for influencing an electron beam and forming a magnetic field between the two pole pieces. A third pole piece is provided, but is not in magnetic contact with the two other pole pieces. The third pole piece is immersed in the magnetic field formed between the first and second pole pieces and extracts a part of such magnetic field. Also disclosed is a cathode lens and an electron beam device for use with such an electron beam lens.

Abstract: A spectrometer and method of spectroscopy are provided for surface analysis. The spectrometer comprises an energy analyser for analysing the energies of charged particles liberated from a sample, a lens arranged to project a diffraction image of the analysis area at the image plane of the lens and a detector for detecting the charged particles. The analyser and lens are arranged to generate an image at the detector in which the charged particles are distributed along a first direction according to their emission angles and are distributed along another direction according to their energies. The detector is arranged to detect the distribution of charged particles in the image along the first direction to provide angle resolved energy spectra.

Abstract: The invention relates to an objective lens for influencing a particle beam, particularly an electron beam with a magnetic single-pole lens and an electrostatic lens having a first and a second electrode which can be supplied with different potentials. The objective lens is characterized in that the electrostatic lens is disposed after the magnetic single-pole lens in the direction of the particle beam.

Abstract: Charged-particle-beam (CPB) optical systems are provided that reduce the required number of power supplies used to energize the constituent lenses and deflectors, while imparting no adverse effects on stability and settling time of the power supplies. Such CPB optical systems project and form an image of an irradiated portion of a mask, wherein the image passes through a mask that receives the charged-particle-beam illumination and is projected onto a wafer by a two-stage lens and multiple deflectors. At least most of the deflectors used for aberration reduction comprise, respectively, a main coil having a large ampere-turn and an auxiliary coil having a small ampere-turn. The main coils of the such deflectors are driven by the same power supply.

Abstract: Charged-particle-beam projection optical systems are disclosed including a symmetric magnetic doublet comprising first and second magnetic lenses arranged along a system axis between a reticle position and a sample position. The lenses have point symmetry about a crossover point and a centrally located mutual focal point located between the two lenses. The dimensions on the sample-side of the cross-over point are reduced, in both the axial direction measured from the axis and the radial direction measured from the crossover point, by a demagnification ratio. The magnetic fields of each lens are opposite, the electrical excitation current applied to each lens coil is equal, and the lenses are preferably energized by the same power supply. A first beam deflector is located near the reticle inside the first lens; a second and third beam deflector are located inside the first lens and the second lens, respectively; and a fourth beam deflector is located near the sample inside the second lens.

Abstract: A method and system for cleaning the silicon microlenses in an electron-beam microcolumn in situ. The microlenses individually are heated by passing a current through each microlens. The current is utilized to heat the microlens to at least two hundred degrees Centigrade to prevent contamination and occasionally to a temperature on the order of six to seven hundred degrees Centigrade to remove any builtup or potential contamination.

Abstract: Methods and apparatus are provided for scanning and focusing a charged particle beam, such as an ion beam. The apparatus includes a charged particle source for generating a charged particle beam, scan electrodes disposed on opposite sides of the charged particle beam and a postscan electrode disposed adjacent to the charged particle beam and downstream of the scan electrodes. A postscan voltage is applied to the postscan electrode. A scan voltage generator applies to the scan electrodes scan voltages for scanning the charged particle beam in a first direction. The scan voltages have negative DC voltage offsets which are preferably more negative than the postscan voltage. The charged particle beam is focused in a second direction orthogonal to the first direction. The invention may be used in an ion implanter to increase the ion beam current delivered to a target.

Abstract: Resolution of a symmetric magnetic doublet charged particle beam projection lens is improved by applying a non-uniform electrostatic field having the same symmetry conditions as the lens through the magnetic doublet which provides a maximum particle velocity at the plane of symmetry of the magnetic doublet. Since the same symmetry conditions are used for both the electrostatic and magnetic fields, the performance of the magnetic doublet is not compromised. Electrode configurations which provide more intense fields provide further reduction in aberrations for a given potential superimposed on the accelerating voltage.

Abstract: An electron energy filter includes a first pair of magnetic poles for generating a first deflecting magnetic field and a second pair of magnetic poles for generating a second deflecting magnetic field in the same direction as the first deflecting magnetic field. The incident electrons are deflected about 90.degree. with a trace radius of AM1 through the effect of the first deflecting magnetic field, passed through a free space having a distance DL2 that is about a half of the trace radius AM1 and then are incident to the second deflecting magnetic field. The electrons are deflected about 180.degree. with a trace radius AM2 that is about a half of the curvature radius AM1 and are passed through the free space DL2. Then, the electrons are incident to the first deflecting magnetic field again where those electrons are deflected about 90.degree.. The deflected electrons are traveled like a gamma trace so that those electrons outgo in the same direction as the incident one.

Abstract: Charged-particle-beam optical systems are disclosed that are usable in projection-exposure apparatus employing a charged particle beam for projecting an image of an object (e.g., region of a lithographic mask) onto a sample (e.g., semiconductor wafer). Such an optical system comprises a deflection system for deflecting a trajectory of the charged particle beam such that a second-order derivative of the deflected trajectory is substantially constant in an object-side region extending from an object point to a crossover image point, and substantially constant in an image-side region extending from the crossover image point to an image point.

Abstract: An ion implanter for implanting ions in a target substrate is arranged to scan the ion beam at the point of extraction of the beam from the ion source. The ion beam extraction assembly includes a tectrode construction in which an extraction electrode adjacent the ion source aperture is split into two halves. A differential voltage is applied across the two halves of the extraction electrode to deflect the ion beam being extracted from the ion source electrostatically. The plane of deflection is arranged to coincide with the plane if dispersion of the ions in a mass analyser magnet downstream of the extraction point and the deflected beam of ions of desired mass/charge ratio is still brought to focus at a common mass selection slit at the exit of the analyser magnet.

Abstract: The present invention relates to a charged particle beam exposure apparatus, deflecting a charged particle beam formed into a predetermined shape by being passed through a predetermined transmission mask, and irradiating a predetermined location on the surface of a sample with the charged particle beam. The apparatus comprises: a mirror barrel through which the charged particle beam is passed; and an electrostatic deflector, provided in the mirror barrel, for deflecting the charged particle beam. The electrostatic deflector has a plurality of pairs of electrodes, which are made of a conductive material having carbon as a primary element and are embedded in an internal face of an insulating cylinder. The present invention also relates to a method for forming the electrostatic deflector.

Abstract: An optical unit having an electrostatic lens for influencing a particle beam wherein the lens has at least one first and one second electrode downstream of one another in the direction of the particle beam, each of the electrodes being chargeable with a potential and in electrical contact with a high-resistance body having a channel therethrough for the particle beam. A further component is provided for influencing the particle beam in the region of the electrostatic lens.

Abstract: Charged-particle-beam optical systems are disclosed exhibiting reduced aberrations. Such a system comprises a symmetric magnetic doublet type projection lens system and deflectors. An imaginary Z-axis is superimposed on the optical axis with an origin at an image-crossover point. Excitation of the deflectors and lenses is controlled by a controller so that the ratio of G.sub.1 (Z) to G.sub.2 (-M.multidot.Z) is substantially equal to the ratio of (-M) to 1 (i.e., G.sub.1 (Z):G.sub.2 (-M.multidot.Z)=(-M):1), and the deflection trajectory of the charged-particle beam intersects with the optical axis at a crossover Z.sub.c, where M is the magnification of the lens system, G.sub.1 (Z) is the distribution of the deflective magnetic field formed on the object side of the crossover, and G.sub.2 (Z) is the distribution of the deflective magnetic field formed on the image side of the crossover.

Abstract: The invention relates to a method and apparatus for measuring The landing angle of a particle beam is adjusted by scanning the beam over two cylindrical beam target surfaces that are positioned close to the system axis. The output of a beam detector is differentiated and displayed on an oscilloscope. The relevant lens current is adjusted until one side of the scan indicates that the focal plane of the beam is at the center of the beam target. The angle of the beam is then adjusted with the relevant deflector until both sides of the scan are the same, indicating that the beam is accurately vertical.

Abstract: An optical element includes two electrodes 1 and 2 arranged at a distance to oppose each other and configured to converge an electron beam. The opposing surfaces of the electrodes 1 and 2 are so formed as to be cylindrically symmetrical along the beam passing direction and to form curves obtained by deforming hyperbolas in a direction perpendicular to the beam passing direction, in order that an electric field whose effective part except for an arbitrary constant of the field potential is given by.phi.=(k/2)r.sup.2 -.alpha.lnr-kz.sup.2is spatially partially formed in a cylindrical coordinate system defined by (r, z, .theta.).

Abstract: A method for calculating and correcting an astigmatism error in a charged particle beam system. Images are collected during a single focus sweep of the charged particle beam system. Different orientations of image features, such as lines on a stigmation target, are analyzed. Optimum sharpness or best focus values are obtained as a function of the objective lens settings. Appropriate changes to the settings of the astigmatism correctors are computed by taking a linear combination of optimum sharpness values associated with the different orientations of image features. Proper settings of the objective lens and the astigmatism correctors result in focusing of the beam into a "small" spot. In a scanning electron microscope, for example, two sets of quadrupole compensation coils are typically used as astigmatism correctors.

Abstract: A charged particle beam projection system includes a source of charged particles and a first doublet of condenser lenses with a first symmetry plane through which the beam is directed, located lower on the column. A trim aperture element is located at the first symmetry plane of the first doublet wherein the trim aperture serves as a first blanking aperture. Below the trim aperture there is a shaping aperture. Next is a second doublet of condenser lenses with a second symmetry plane. A third aperture, which is located at the symmetry plane of the second doublet serves as another blanking aperture.

Abstract: A novel design for a time-of-flight mass spectrometer capable of tandem mass spectrometry measurements with high resolution and high sensitivity using two variable reflectrons in a co-linear geometry. Variably switched reflectrons are oriented coaxially on opposing ends of the ion flight region allowing multiple passes of the ions along the flight region permitting high resolution, tandem mass spectrometry experiments to be performed. An electrostatic particle guide is incorporated to ensure high ion transmission efficiency in a multi-pass system. In addition to permitting the high transmission efficiency of ions, the EPG can be used in a bipolar pulsed mode to isolate ions of interest for structural study.

Abstract: An electron beam exposure device in which an electron beam from an electron beam source is passed through at least a slit of a first slit assembly. The first slit assembly includes: a base; a bearing assembly; a stage rotatably supported by the base via the bearing assembly; a stage rotation adjusting mechanism; a slit member; and at least one heat transfer path means for transferring heat of the stage to the base, wherein the at least one heat transfer path means enables the rotation of the stage by the stage rotation adjusting mechanism.

Abstract: An electron beam projection system comprises a source of an electron beam, a first doublet of condenser lenses with a first symmetry plane, a first aperture comprising a trim aperture located at the first symmetry plane of the first doublet also serving as a first blanking aperture. A second aperture comprises a shaping aperture located below the trim aperture. A second doublet of condenser lenses with a second symmetry plane is located below the second aperture, the second doublet having a symmetry plane. A third aperture is located at the symmetry plane of the second doublet wherein the third aperture comprises another blanking aperture. There are first blanking plates between the first condenser lens and the trim aperture, and second electrostatic alignment plates between the trim aperture and the second aperture.

Abstract: An electron beam pattern-writing column comprises an emitter and an extractor (14, 15) for generating a low-energy electron beam (13), a series of three electrostatic triple element lenses (17, 18, 21) for focussing the beam, and an electrostatic double deflector (20), which is disposed ahead of the final lens (21), for deflecting the beam to scan a substrate (11) on which a pattern is to be written. After focussing and deflection of the beam have been carried out by the electrostatic components, which are low power and thus have no significant heat output, the beam electrons are accelerated by the final element (21c) of the final lens (21) into a high-energy beam with the required strength for high-quality pattern writing.

Abstract: An apparatus, system and method of fabricating the apparatus utilize a flexible substrate to provide structural integrity for the apparatus. The apparatus is an optical path device used in mass spectrometers to manipulate ions extracted from a sample of interest. The apparatus uses traces on a surface of the flexible substrate to generate a desired electrostatic field. Preferably, the flexible substrate is made of KAPTON.RTM. and the traces are composed of stainless steel or nickel. In one embodiment, an ion mirror is formed by shaping the flexible substrate and the traces to create a hollow conduit for the ions. In another embodiment, an einzel lens is formed by varying the configuration of the conductive material on the flexible substrate. In a different embodiment, a region of resistive material on the flexible substrate is utilized to create a field gradient. The resistive material can be used to create an ion mirror.

Abstract: Particle-optical rotationally symmetrical lenses inevitably have chromatic aberration. This lens fault determines the limit of the resolution of known particle-optical apparatus at a comparatively low acceleration voltage (0.5 kV to 5 kV) of the particle beam. This lens fault cannot be eliminated by compensation by means of rotationally symmetrical fields. In order to enhance the resolution of the particle-optical apparatus nevertheless, it has already been proposed to mitigate said lens fault by means of a Wien type corrector. Such a known configuration is provided with a number of electrical and magnetic multipoles. In order to achieve easier adjustment of the various multipole fields, the pole faces (30-i) governing the multipole fields according to the invention have a specific length L=(2.pi..sup.2 n.sup.2)/(K.sub.obj.sup.2 C.sub.c,obj), in which K.sub.obj is the strength of the focusing lens to be corrected and C.sub.c,obj is the coefficient of chromatic aberration of this lens.

Abstract: Charged-particle-beam optical systems are disclosed for transferring patterns from a mask to a wafer using a charged-particle beam ("CPB"). In an embodiment, a mask-illumination lens system forms a demagnified image of an illumination aperture on a mask subfield. A first and a second projection lens receive the CPB from the crossover and form a demagnified image of the selected subfield on the wafer. One or more deflectors are provided to deflect the CPB to the selected mask subfield. A magnetic field satisfying conditions of a moving objective lens or a variable axis lens is provided by a deflector so that a principal ray from the illumination aperture to the mask subfield coincides with an effective optical axis produced by the deflector. The focal lengths of the mask-illumination lens system and the first projection lens satisfy conditions so that the CPB optical system is compact.

Abstract: Electron-optical, rotationally-symmetrical lenses inevitably exhibit spherical and chromatic aberration which usually determine the limit of the resolution. Such lens aberrations cannot be eliminated by compensation by means of rotationally-symmetrical fields. In order to enhance the resolution nevertheless, it has already been proposed to reduce said lens aberrations by means of a Wien-type corrector. Such a configuration must satisfy very severe requirements as regards manufacturing precision, mechanical and electrical stability and alignment of the various elements relative to one another. Consequently, it is extremely difficult to perform readjustment of the electron-optical apparatus by means of such a corrector in the case of changing circumstances. According to the invention there is provided a combination of a correction unit and a doublet to be corrected.

Abstract: There is disclosed an .OMEGA.-filter for use with an electron microscope. This filter has only one parameter that controls the exciting currents supplied to four magnets M.sub.1 -M.sub.4. Only those electrons of incident electrons that have a given energy pass through the successive magnets and emerge from the filter. The coils of the magnets M.sub.1 and M.sub.4 are identical in number of turns and connected in series. Similarly, the coils of the magnets M.sub.2 and M.sub.3 are identical in number of turns and connected in series. When a human operator specifies an exciting current i.sub.1 through an entry device, a controller causes a power supply P.sub.1 to produce this exciting current i.sub.1, thus exciting the magnets M.sub.1 and M.sub.4. The controller calculates an exciting current i.sub.2 from the exciting current i.sub.1, and causes a power supply P.sub.2 to produce this exciting current i.sub.2, thus exciting the magnets M.sub.2 and M.sub.3.

Abstract: The present invention relates to wear-through detection in multilayered parts. This invention specifically encompasses, in one aspect, wear-through detection in semiconductor vacuum processing systems in which a wear indicator that will release a detectable constituent upon exposure to processing conditions is used inside the semiconductor vacuum processing tool. This invention permits real time detection of wear during operation of semiconductor vacuum processing equipment.

Abstract: A charged beam applying apparatus comprises a column at least having a charged beam generation section and optical system for controlling the charged beam and a chamber for holding a specimen in place which is exposed with the charged beam. At least one inner portion of the column is formed of a specific material whose an atomic number is equal or less than 22. When a contamination is cleaned off in the column through the utilization of an oxidation effect, an oxide film is sometimes formed inside the column. The electric charging of the oxide film causes a beam control error. The specific material such as the metal of the atomic number causes very much less such error. This is because such specific material involves less emission of secondary electrons and less electric charging in the oxide film formed.

Abstract: A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.

Abstract: The present invention relates generally to ion beam handling in mass spectrometers, and more specifically to a method and apparatus for focusing ions in time-of-flight mass spectrometers (TOFMS). This invention focuses ions using one or more electrodes bound on at least one side by an electrically conducting grid. Electric fields generated by the electrodes focus the ions. With electric fields of the proper strength and geometry, ions may be focused onto a point some desired distance from the source. According to the preferred embodiment of the present invention, a shielded lens, in the form of an electrically conducting cylinder and two conducting grids, is used to produce and adjust the position of an ion focal point.

Abstract: A method of manufacturing an electrostatic deflecting electrode unit for use in charged beam lithography apparatus comprises a first step of preparing a hollow cylindrical member made of metal, a second step of forming grooves of a predetermined width in a cylindrical member in the direction of radius thereof and along lines that equally divides the periphery of the cylindrical member into eight sections, a third step of attaching a ring-like member made of an insulating material to each of end surfaces of the cylindrical member which are opposed to each other in the direction of axis of the cylindrical member in such a way that bottom portions of the grooves are exposed, and a fourth step of dividing the cylindrical member into eight electrodes by extending the bottom portions of the grooves in the direction of radius of the cylindrical member to reach the hole of the cylindrical member with the ring-like members attached.

Abstract: An optical system for a particle beam device such as an electron microscope, e-beam device or FIB device, including a particle beam column having an optical axis along which a beam of particles is projected and an apertured plate positioned in the column having an aperture which is coaxial with the optical axis, the plate being moveable in a direction which is parallel to the optical axis.

Abstract: Apparatus are disclosed for performing microlithography using a charged-particle beam and a mask partitioned into multiple subfields to be transferred sequentially to a sensitive substrate. The apparatus comprise a charged-particle-beam illumination system, a charged-particle-beam projection system, and a beam-characteristics correction system situated between the charged-particle-beam source and the substrate. The beam-characteristics correction system is energizable to serve as either an illumination-characteristics correction means (e.g., a first set of coils situated between the source and the mask) or an imaging-characteristics correction means (a first or second set of coils situated between the mask and the substrate).

Abstract: The invention relates to a detector objective lens and a charged particle am device with such a detector objective lens containing a main lens for focussing a charged particle beam on a specimen, which consists of a magnetic lens (60) and an electrostatic lens (61) and a detector (62) disposed in front of the magnetic lens (60) in the direction of the charged particle beam (2) for detecting the charged particles released at the specimen (8). An additional lens is provided for influencing the released charged particles, which generates an electrostatic and/or magnetic field and is disposed between the main lens and the detector, the fields of the main lens and said additional lens being substantially separated from each other.

Abstract: The invention relates to a gun lens for generating a particle beam with a cathode, an extraction electrode, an anode and a condenser lens, wherein a deceleration field is generated between the extraction electrode and the anode and the condenser lens produces a magnetic field which is superimposed on both the cathode, the extraction electrode and the anode.

Abstract: Disclosed herein is a pattern transfer method wherein a beam transmitting portion which transmits a charged particle beam and a beam limiting portion which scatters or absorbs the charged particle beam to a greater extent than the beam transmitting portion are disposed in a pattern area of a mask according to a pattern to be transferred onto a radiation-sensitive substrate. The pattern area is irradiated with the charged particle beam, and at least a part of the charged particle beam passing through the mask is led to the substrate to transfer the pattern onto the substrate. When the pattern area is irradiated with the charged particle beam, the dose of charged particle beam applied per unit area of the beam limiting portion is reduced to a quantity smaller than the dose of charged particle beam applied per unit area of the beam transmitting portion.

Abstract: An arrangement for shadow-casting lithography by focusing electrically charged particles for the purpose of imaging structures of a mask on a substrate disposed immediately to the rear thereof, comprising a particle source (2) and an extraction system (3) which produces a divergent particle beam issuing from a substantially point-shaped virtual source, and comprising a lens (6) for focusing the divergent particle beam which comprises an electrode arrangement (6a, 6b, 6c, 6d, 6e, 6f, 6g, 6h) which includes at least one electrostatic collector lens (6a to 6f in conjunction with an electrostatic diverging lens (6g, 6h) in order to be able to compensate lens errors of the collector lens in a purposeful manner with respect to lens errors of the diverging lens and to render possible a predeterminable change in the imaging scale.

Abstract: A mass spectrometer is disclosed which yields fast, full-scan spectra over a wide mass-to-charge ratio range. The instrument contains an ion source which generates nearly monoenergetically-pulsed ion packets which spatially focus at a predetermined distance along the drift path of the ions, a mass filter/analyzer which linearly disperses or deflects the ions in the ion-packets by mass-to-charge ratio by applying a traverse, quadratically time-varying and increasing electric field over the entire length of the deflection region of the mass filter/analyzer, and a spatial mass detector. A method of analyzing the mass-to-charge ratio of ions is also disclosed.

Abstract: An electrostatic lens system consisting of several electrodes and a novel method of making same. The invention relates to a lithography apparatus that includes a field composable lens where at least one lens electrode has a novel structure, said structure comprising an outer support structure, an insulating intermediate part and a conductive inner part composed of a number of segment-like subelectrodes that can be individually powered, if necessary, slightly differently to produce desired individual electrostatic subfields to be superimposed to the lens field. With the field composable lens design, it has been successfully demonstrated that a number of shape and alignment errors of lens components can be corrected by supplying slightly different voltages to individual subelectrodes, thus optimizing the overall lens performance (in view of its optical properties).

Abstract: A charged particle beam lithograph apparatus of the present invention projects a charged particle beam onto a sample through a mask and lithographs a mask pattern on the sample through the movement of the charged particle beam. In order to focus the charged particle beam, the apparatus creates an electromagnetic field, from the magnetic lens, symmetric with respect to an optical axis of the charged particle beam. An aberration of the charged particle beam is created under the symmetric electromagnetic magnet. The aberration is compensated for under an electromagnetic field nonsymmetric with respect to the optical axis which is created by a deflection unit.

Abstract: A method of evaluating a shaped beam generated by a charged beam writer, comprises the steps of: a first step of shaping line beams by dividing into 1/n one side of the shaped beam having a dimension "a" in an x direction and a dimension "b" in a y direction perpendicular to the x direction, where n is the number of divisions; a second step of irradiating the shaped line beam upon a surface of the sample or the movable stage for a constant time or longer; a third step of shaping a beam by adding a bias value .delta.

Abstract: The invention is related to a plasma technology field, in particular, to plasma accelerators, used in a space technology, in scientific researches and in industry. A technical result is that the accelerator has an increased lifetime which is achieved by reducing in wear of discharge chamber walls. An accelerator with closed electron drift includes a ring anode 1 with an anode cavity 2, a magnetic circuit 3, field coils 4 and pole tips 5 with a ring interpole gap, external 6 and internal 7 ring cathodes, a cathode-compensator 8, a power supply 9, a means forming positive gradient of magnetic field 10 which can be formed by walls of the anode 1 made of ferromagnetic material. Outlet edges of the anode 1 are provided with nozzles 11 made of nonmagnetic material; a nozzle shape coincides with shape of the magnetic field line of force which is tangential to outlet edges of the anode. The anode 1 is connected with a system supplying with gaseous active substance by means of the hole 12.

Abstract: Particle-optical rotationally-symmetrical lenses inevitably exhibit spherical and chromatic aberration. These lens aberrations usually determine the limit of the resolution of the known particle-optical apparatus. Said lens aberrations cannot be eliminated by compensation by means of rotationally-symmetrical fields. In order to enhance the resolution of particle-optical apparatus nevertheless, it is proposed to reduce said lens aberrations by means of a "Wien-type" corrector. Such a configuration must satisfy very severe requirements as regards manufacturing precision, mechanical stability (inter alia with a view to thermal drift), alignment of the various elements relative to one another, and stability of the electric currents and voltages for the excitation of the electric and magnetic poles.

Abstract: An electron beam exposure apparatus which minimizes the influence of the space charge effect and aberrations of a reduction electron optical system, and simultaneously, increases the exposure area which can be exposed at once, thereby increasing the throughput. An electron beam exposure apparatus having a source for emitting an electron beam and a reduction electron optical system for reducing and projecting, on a target exposure surface, an image of the source, includes a correction electron optical system which is arranged between the source and the reduction electron optical system to form a plurality of intermediate images of the source along a direction perpendicular to the optical axis of the reduction electron optical system, and corrects in advance aberrations generated when the intermediate images are reduced and projected on the target exposure surface by the reduction electron optical system.