Electron Bombardment Type Patents (Class 250/427)
  • Patent number: 10879030
    Abstract: An ion source can include a magnetic field generator configured to generate a magnetic field in a direction parallel to a direction of the electron beam and coincident with the electron beam. However, this magnetic field can also influence the path of ionized sample constituents as they pass through and exit the ion source. An ion source can include an electric field generator to compensate for this effect. As an example, the electric field generator can be configured to generate an electric field within the ion source chamber, such that an additional force is imparted on the ionized sample constituents, opposite in direction and substantially equal in magnitude to the force imparted on the ionized sample constituents by the magnetic field.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: December 29, 2020
    Assignee: PerkinElmer Health Sciences, Inc.
    Inventors: David G. Welkie, Tong Chen
  • Patent number: 10861672
    Abstract: An apparatus for measuring ion beam current values without disturbing the state of ionization of an ion source includes a high-voltage circuit for applying a voltage between an anode and at least one cathode of an ion source based on a voltage condition and supplying its output current to the anode; a gas flow rate adjusting mechanism for adjusting the flow rate of a gas being an ion source material for generating ions and to be admitted into the ion source; a memory in which there is stored information representing a relationship between the flow rate of the gas and the value of an extraction current flowing through an extraction electrode; and an arithmetic processor for finding the extraction current corresponding to the flow rate of the gas based on the information stored in the memory and subtracting the value of the extraction current from the value of the output current supplied to the anode by the high-voltage circuit to compute the electrical current value of the ion beam.
    Type: Grant
    Filed: February 12, 2020
    Date of Patent: December 8, 2020
    Assignee: JEOL Ltd.
    Inventor: Munehiro Kozuka
  • Patent number: 10763073
    Abstract: An ion source is provided. The ion source includes a plasma generation container, an electron supply, an electromagnet and a shift means. The plasma generation container generates an ion beam to be extracted therefrom in an ion beam extraction direction. The electron supply supplies electrons into the plasma generation container. The electromagnet generates a magnetic field for capturing the electrons from the electron supply. The shift means shifts a center of the magnetic field in the ion beam extraction direction to change a rate of a desired type of ion to be contained in the ion beam.
    Type: Grant
    Filed: January 24, 2019
    Date of Patent: September 1, 2020
    Assignee: NISSIN ION EQUIPMENT CO., LTD.
    Inventor: Tetsuro Yamamoto
  • Patent number: 10748738
    Abstract: Provided herein are approaches for increasing efficiency of ion sources. In some embodiments, an apparatus, such as an ion source, may include a chamber housing having a first end wall and a second end wall, and an extraction plate coupled to at least one of the first end wall and the second end wall. The extraction plate may include an extraction aperture. The apparatus may further include a tubular cathode extending between the first end wall and the second end wall.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: August 18, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Svetlana Radovanov, Frank Sinclair, You Chia Li, Peter Ewing, Ajdin Sarajlic, Christopher A. Rowland, Nunzio Carbone
  • Patent number: 10619308
    Abstract: Methods of producing cellulosic or lignocellulosic materials for use in papermaking include treating a cellulosic or lignocellulosic dry feedstock having a first average molecular weight with ionizing radiation, and controlling the dose of ionizing radiation such that the average molecular weight of the feedstock is reduced to a predetermined level. A method of producing an irradiated paper product includes treating a paper product including a first carbohydrate-containing material having a first molecular weight with ionizing radiation, and controlling the dose of ionizing radiation so as to provide an irradiated paper product with a second carbohydrate-containing material having a second molecular weight higher than the first molecular weight. Pulp and paper products are produced.
    Type: Grant
    Filed: July 13, 2018
    Date of Patent: April 14, 2020
    Assignee: Xyleco, Inc.
    Inventor: Marshall Medoff
  • Patent number: 10465094
    Abstract: A silicone coating process that improves the durability of silicone coatings on the surfaces of surgical needles and other medical devices. The silicone coated surgical needles or medical devices produced by this process have both superior lubricity and durability for ease of repeated and successive passes through tissue. The coating compositions used in the novel process contain an excess amount of polymethylhydrosiloxane cross-linker. After curing, the process utilizes gamma radiation to treat the lubricious coatings. The coatings have improved durability and performance. The penetration performance of needles coated by this novel method remains constant and flat over at least one hundred repeat passes through tissue or tissue simulation media. This provides a consistent or flat tactile response from the needles to the hand of the surgeon during a lengthy closure process, rather than an unpredictably increasing force profile.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: November 5, 2019
    Assignee: Ethicon, Inc.
    Inventor: Duan Li Ou
  • Patent number: 10299882
    Abstract: Apparatus, system, and methods are provided for reducing infectious agents at a sterile site by preventing infectious agents from coming into contact with the sterile site. A barrier is produced for infectious agents that may come in proximity or otherwise communicate with the site. The apparatus is configured to create a void-free barrier in which infectious agents are reduced with minimal exposure of potentially harmful effects of the barrier to the sterile site, objects, or users of the apparatus.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: May 28, 2019
    Assignee: ARMOUR TECHNOLOGIES, INC.
    Inventors: Andrew W. Armour, Kevin McGough, William Gallo
  • Patent number: 10081862
    Abstract: A deposition apparatus configured to perform a deposition process on a substrate, the deposition apparatus including a chamber having an exhaust opening in a surface, a deposition source in the chamber configured to eject one or more deposition materials toward the substrate, a cooling plate corresponding to an inner surface of the chamber, at which the exhaust opening is formed, a refrigerator contacting the cooling plate, and a pump coupled to the exhaust opening.
    Type: Grant
    Filed: August 28, 2013
    Date of Patent: September 25, 2018
    Assignee: Samsung Dispaly Co., Ltd.
    Inventors: Sun-Ho Kim, Myung-Soo Huh, Jeong-Ho Yi, Cheol-Rae Jo, Hyun-Woo Joo, Yong-Suk Lee
  • Patent number: 9991095
    Abstract: Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.
    Type: Grant
    Filed: August 12, 2009
    Date of Patent: June 5, 2018
    Assignee: Entegris, Inc.
    Inventors: Joseph D. Sweeney, Sharad N. Yedave, Oleg Byl, Robert Kaim, David Eldridge, Lin Feng, Steven E. Bishop, W. Karl Olander, Ying Tang
  • Patent number: 9865433
    Abstract: A gas injection system, including an extraction plate having an extraction aperture for allowing passage of an ion beam through the extraction plate, the extraction plate further having a gas slot for expulsion of a residue removal gas from the extraction plate. The gas injection system may include a gas conduit extending through the extraction plate between the gas slot and a gas manifold, a gas source connected in fluid communication with the gas manifold, the gas source containing the residue removal gas. The gas manifold may include a valve adjustable between a first position, wherein the residue removal gas is allowed to flow into the extraction plate, and a second portion, wherein the residue removal gas can be vented from the extraction plate. The gas injection system may further include a manifold cover coupled to the gas manifold.
    Type: Grant
    Filed: April 17, 2017
    Date of Patent: January 9, 2018
    Assignee: Varian Semiconductor Equipment Associats, Inc.
    Inventors: Jay Wallace, Ernest E. Allen, Richard J. Hertel, Alexander C. Kontos, Shurong Liang, Jeffrey E. Krampert, Tyler Rockwell
  • Patent number: 9799504
    Abstract: In order to attain a main objective of the present invention to provide an ion source capable of efficiently extracting ions, the ion source is configured to include: a conductive tubular body having an ion emitting aperture in a tip surface thereof and a penetration portion in a side wall thereof allowing thermo-electrons to pass through from an outside toward an inside; a mesh surrounding an outer periphery of the penetration portion; and a thermionic emission filament surrounding an outer periphery of the mesh, such that the thermo-electrons emitted from the thermionic emission filament pass through the mesh and reach the inside of the conductive tubular body through the penetration portion.
    Type: Grant
    Filed: December 6, 2016
    Date of Patent: October 24, 2017
    Assignee: HORIBA STEC, CO., LTD.
    Inventors: Masanobu Nakazono, Hirotaka Yabushita, Junya Nakai, Tomoko Katsuda
  • Patent number: 9653253
    Abstract: A plasma-based material modification system for material modification of a work piece may include a plasma source chamber coupled to a process chamber. A support structure, configured to support the work piece, may be disposed within the process chamber. The plasma source chamber may include a first plurality of magnets, a second plurality of magnets, and a third plurality of magnets that surround a plasma generation region within the plasma source chamber. The plasma source chamber may be configured to generate a plasma having ions within the plasma generation region. The third plurality of magnets may be configured to confine a majority of electrons of the plasma having energy greater than 10 eV within the plasma generation region while allowing ions from the plasma to pass through the third plurality of magnets into the process chamber for material modification of the work piece.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: May 16, 2017
    Assignee: ADVANCED ION BEAM TECHNOLOGY, INC.
    Inventors: William Divergilio, Stephen Savas, Susan Felch, Tienyu Sheng, Hao Chen
  • Patent number: 9615884
    Abstract: Apparatus, system, and methods are provided for reducing infectious agents at a sterile site by preventing infectious agents from coming into contact with the sterile site. A barrier is produced for infectious agents that may come in proximity or otherwise communicate with the site. The apparatus is configured to create a void-free barrier in which infectious agents are reduced with minimal exposure of potentially harmful effects of the barrier to the sterile site, objects, or users of the apparatus.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: April 11, 2017
    Assignee: Armour Technologies, Inc.
    Inventors: Andrew W. Armour, Kevin McGough, William Gallo
  • Patent number: 9607800
    Abstract: An electron impact ion beam source is provided with a pressure chamber to confine a specific high pressure area within excited gas to a small enough volume that the source can be operated at relatively high pressure and still achieve substantial brightness of the extracted ion beam. In particular, the area is configured such that the overall linear dimension along the beam path is less than the mean free path of the ions and the electrons within the chamber. If pressure is increased, the linear dimension must be correspondingly decreased to maximized brightness. By keeping linear dimensions sufficiently small, both incident electrons and extracted ions are enabled to transit the source region without significant energy loss. The new source design allows operation at pressures at least an order of magnitude higher than other known ion sources and thus produces an order of magnitude higher brightness.
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: March 28, 2017
    Assignee: Nonsequitur Technologies, Inc.
    Inventor: Peter E. Loeffler
  • Patent number: 9558913
    Abstract: A system for detecting and counting ions comprises a source of atoms, a hot filament ion source, means for generating an electric field and a magnetic field, and means for detecting and counting the ions, and the filament comprises a portion that is concave along its longitudinal and/or transverse axis.
    Type: Grant
    Filed: December 11, 2012
    Date of Patent: January 31, 2017
    Assignee: THALES
    Inventors: Pierre Nugues, Adel Douahi, Rene-Paul Garcia
  • Patent number: 9472389
    Abstract: An ion source assembly for a static mass spectrometer, comprises: a mounting element for locating the assembly within the static mass spectrometer; an ion source for generating ions to be analyzed in the static mass spectrometer, the ion source being spaced from the mounting element and arranged to be held in use at a first relatively high potential V1 with respect to the mounting element; and a spacer mounted between the mounting element and the ion source, the spacer arranged to be held in use at a second potential V2 with respect to the mounting element, which is less than the first potential V1.
    Type: Grant
    Filed: November 15, 2013
    Date of Patent: October 18, 2016
    Assignee: Thermo Fisher Scientific (Bremen) GmbH
    Inventors: Michael Krummen, Michael Deerberg, Johannes Schwieters
  • Patent number: 9362092
    Abstract: An apparatus includes a gas dispersal plate and an adapter structure. The gas dispersal plate has a plurality of gas dispersion orifices, wherein one or more of the gas dispersion orifices have a first portion with a first cross-section configured to allow entry of gas and a second portion having a second cross-section configured to allow exit of gas, the first cross-section being smaller than the second cross-section.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: June 7, 2016
    Assignee: LGS INNOVATIONS LLC
    Inventors: Mike Santo, Hugo Safar
  • Patent number: 9147550
    Abstract: A gas mixture method and apparatus of prolonging lifetime of an ion source for generating an ion beam particularly an ion beam containing carbon is proposed here. By mixing the dopant gas and the minor gas together to generate an ion beam, undesired reaction between the gas species and the ion source can be mitigated and thus lifetime of the ion source can be prolonged. Accordingly, quality of ion beam can be maintained.
    Type: Grant
    Filed: December 3, 2012
    Date of Patent: September 29, 2015
    Assignee: ADVANCED ION BEAM TECHNOLOGY, INC.
    Inventors: Wei-Cheng Lin, Zhimin Wan, Koulin Hu
  • Patent number: 9134074
    Abstract: A method and apparatus are disclosed for controlling a semiconductor process temperature. In one embodiment a thermal control device includes a heat source and a housing comprising a vapor chamber coupled to the heat source. The vapor chamber includes an evaporator section and a condenser section. The evaporator section has a first wall associated with the heat source, the first wall having a wick for drawing a working fluid from a lower portion of the vapor chamber to the evaporator section. The condenser section coupled to a cooling element. The vapor chamber is configured to transfer heat from the heat source to the cooling element via continuous evaporation of the working fluid at the evaporator section and condensation of the working fluid at the condenser section. Other embodiments are disclosed and claimed.
    Type: Grant
    Filed: October 4, 2012
    Date of Patent: September 15, 2015
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventor: Neil J. Bassom
  • Patent number: 9018598
    Abstract: A system and method comprising an ion production chamber having a plasma source disposed in said chamber, a harvest gas disposed to flow through the chamber from an inlet to an outlet, and a jet, said jet operable to introduce a sample into the harvest gas flow. In some embodiments the system includes using helium as the harvest gas. Certain embodiments include introducing a sample perpendicular to the harvest gas flow and using multiple sample introduction jets to increase mixing efficiency. The charge sample may be coupled to a MEMS-based electrometer.
    Type: Grant
    Filed: May 16, 2014
    Date of Patent: April 28, 2015
    Assignee: Brechtel Manufacturing, Inc.
    Inventor: Fredrick J Brechtel
  • Patent number: 8993986
    Abstract: An electron beam emitter comprises a housing enclosing a cathode capable of emitting electrons within the housing and a window for allowing the emitted electrons to exit the housing, wherein the housing has an opening adapted to be at least partly engaged with a high voltage connector assembly, the assembly being adapted to connect the cathode to a power supply, the electron beam emitter further comprising a cooling flange surrounding the opening and having an interior channel extending between an inlet port and an outlet port for receiving cooling fluid for cooling the high voltage connector assembly. The invention further relates to a method of cooling an electron beam device.
    Type: Grant
    Filed: June 27, 2012
    Date of Patent: March 31, 2015
    Assignee: Tetra Laval Holdings & Finance S.A.
    Inventor: Toni Waber
  • Patent number: 8980654
    Abstract: The ion implantation method includes setting an ion beam scanning speed and a mechanical scanning speed of an object during ion implantation using hybrid scan in advance and implanting ions based on the set ion beam scanning speed and the set mechanical scanning speed of the object. In the setting in advance, each of the ion beam scanning speeds is set based on each of ion beam scanning amplitudes changing severally according to a surface outline of an object which is irradiated with the ions so that an ion beam scanning frequency is maintained constant for any of ion beam scanning amplitudes, and the mechanical scanning speed of the object corresponding to the ion beam scanning speed is set so that an ion implantation dose per unit area to be implanted into the surface of the object is maintained constant.
    Type: Grant
    Filed: July 11, 2013
    Date of Patent: March 17, 2015
    Assignee: SEN Corporation
    Inventors: Shiro Ninomiya, Akihiro Ochi
  • Publication number: 20150034837
    Abstract: An ion source includes an ion source chamber, a gas source to provide a fluorine-containing gas species to the ion source chamber and a cathode disposed in the ion source chamber configured to emit electrons to generate a plasma within the ion source chamber. The ion source chamber and cathode are comprised of a refractory metal. A phosphide insert is disposed within the ion source chamber and presents an exposed surface area that is configured to generate gas phase phosphorous species when the plasma is present in the ion source chamber, wherein the phosphide component is one of boron phosphide, tungsten phosphide, aluminum phosphide, nickel phosphide, calcium phosphide and indium phosphide.
    Type: Application
    Filed: August 1, 2013
    Publication date: February 5, 2015
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, William T. Levay, Richard M. White, Eric R. Cobb
  • Publication number: 20150016842
    Abstract: A charger to apply a charge to an object is provided. The charger includes an electron emitter including an electroconductive substrate; and a layer of n-type hexagonal boron nitride codoped with magnesium and oxygen atoms, which is located on the electroconductive substrate, wherein the concentration of oxygen atoms in the layer of n-type hexagonal boron nitride codoped with magnesium and oxygen atoms is higher than the concentration of magnesium atoms in the layer.
    Type: Application
    Filed: July 2, 2014
    Publication date: January 15, 2015
    Applicant: RICOH COMPANY, LTD.
    Inventors: Satomi SABU, Shinji OHTANI
  • Patent number: 8927943
    Abstract: The present invention relates to a device for obtaining the ion source of a mass spectrometer using an ultraviolet diode and a CEM module, having the purpose of inducing initial electron emission using a CEM module and by radiating ultraviolet photons emitted from the ultraviolet diode to the entrance of the CEM module to obtain a large amount of amplified electron beams from the exit and to produce electron beams the emission times of which are accurately controlled at low temperature and at low power.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: January 6, 2015
    Assignee: Korea Basic Science Institute
    Inventors: Mo Yang, Seung Yong Kim, Hyun Sik Kim
  • Patent number: 8907301
    Abstract: A gas mixture method for generating an ion beam is provided here. By dynamically tuning the mixture ratio of the gas mixture, lifetime of the ion source of an ion implanter can be prolonged. Accordingly, quality of ion beam can be maintained and maintenance fee is reduced.
    Type: Grant
    Filed: September 4, 2013
    Date of Patent: December 9, 2014
    Assignee: Advanced Ion Beam Technology, Inc.
    Inventors: Koulin Hu, Zhimin Wan, Wei-Cheng Lin
  • Patent number: 8853636
    Abstract: The primary collimator for a radiotherapy apparatus can be made up of several layers, each comprising several apertures, and each layer being moveable so as to select a specific aperture to build up the primary collimator shape. In this way, the shape of the primary collimator can be tailored and/or the beam filters incorporated into the primary collimator assembly. This saves space in the radiation head whilst also allowing filters to be easily interchanged.
    Type: Grant
    Filed: February 29, 2012
    Date of Patent: October 7, 2014
    Assignee: Elekta AB (Publ)
    Inventor: Clifford William Perkins
  • Patent number: 8835871
    Abstract: An electron cyclotron resonance ion source device includes a plasma chamber configured to contain a plasma; a high-frequency system configured to transmit a high-frequency wave into the chamber; a magnetic field generator configured to generate a magnetic field in the chamber; an accelerating tube including an isolating structure and an extraction system, the magnetic field generator for generating a magnetic field being entirely located downstream of the isolating structure.
    Type: Grant
    Filed: December 13, 2011
    Date of Patent: September 16, 2014
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Olivier Delferriere, Olivier Tuske, Francis Harrault
  • Publication number: 20140256122
    Abstract: Methods and apparatus for a carbon ion source head. An ionization chamber is configured to receive a process gas containing carbon and a noble carrier gas; a cathode is disposed in the ionization chamber and configured to emit electrons in thermionic emission; a graphite coating is provided on at least a portion of the cathode; and an outlet on the ionization chamber is configured to output carbon ions. A method for ion implantation of carbon is disclosed. Additional alternative embodiments are disclosed.
    Type: Application
    Filed: March 8, 2013
    Publication date: September 11, 2014
    Inventors: Yi-Jiun Lee, Cheng-Hung Hu, Yh-Hsiu Hsiao, Kan Hwa Chang, Ming-Te Chen
  • Patent number: 8822947
    Abstract: A particle beam generating device includes at least one accelerator unit for generating a particle beam and at least one emission unit for the output of the at least one particle beam onto a workpiece. The device is configured to release at least two particle beams including hadronic particles with at least one of a different mass or a different charge.
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: September 2, 2014
    Assignee: GSI Helmholzzentrum fuer Schwerionenforschung GmbH
    Inventors: Gerhard Kraft, Nami Saito, Dieter Schardt
  • Patent number: 8803104
    Abstract: An ionization cell for a mass spectrometer (2) includes: an ionization housing (10) having a first and a second electron input groove (11, 26) and one side (16) of which has an output groove (15) for passing ionized particles (14a, 14b, 14c) therethrough, a first working filament (13) placed opposite the first electron input groove (11) and intended to be supplied to produce an electron beam (12), and a second backup filament (22) placed opposite the second electron input groove (26) and intended to be supplied in the event the first working filament (13) fails so as to produce the electron beam, the input groove (26) being placed outside a front region (F) located opposite the first input groove (11). The invention also relates to a leak detector with a mass spectrometer, which includes such an above-described ionization cell.
    Type: Grant
    Filed: March 10, 2010
    Date of Patent: August 12, 2014
    Assignee: Adixen Vacuum Products
    Inventors: Laurent Ducimetiere, Cyrille Nomine, Jean-Eric Larcher
  • Patent number: 8803110
    Abstract: Beam current is adjusted during ion implantation by adjusting one or more parameters of an ion source. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun driven ion source or an RF driven ion source. A beam current adjustment amount is determined. Then, one or more parameters of the ion source are adjusted according to the determined beam current adjustment amount. The beam current is provided having a modulated beam current.
    Type: Grant
    Filed: September 29, 2006
    Date of Patent: August 12, 2014
    Assignee: Axcelis Technologies, Inc.
    Inventors: Michael A. Graf, Edward C. Eisner, William F. DiVergilio, Daniel R. Tieger
  • Publication number: 20140183349
    Abstract: An ion source for use in a radiation generator tube includes a back passive cathode electrode, a passive anode electrode downstream of the back passive cathode electrode, a magnet adjacent the passive anode electrode, and a front passive cathode electrode downstream of the passive anode electrode. The front passive cathode electrode and the back passive cathode electrode define an ionization region therebetween. At least one Spindt cathode is configured to emit electrons into the ionization region. The back passive electrode electrode and the passive anode electrode, and the front passive cathode electrode and the passive anode electrode, have respective voltage differences therebetween, and the magnet generates a magnetic field, such that a Penning-type trap is produced to confine the electrons to the ionization region. At least some of the electrons in the ionization region interact with an ionizable gas to create ions.
    Type: Application
    Filed: December 27, 2012
    Publication date: July 3, 2014
    Applicant: SCHLUMBERGER TECHNOLOGY CORPORATION
    Inventors: Jonna Flores, Luke Perkins
  • Publication number: 20140183348
    Abstract: An ion source for use in a particle accelerator includes at least one cathode. The at least one cathode has an array of nano-sized projections and an array of gates adjacent the array of nano-sized projections. The array of nano-sized projections and the array of gates have a first voltage difference such that an electric field in the cathode causes electrons to be emitted from the array of nano-sized projections and accelerated downstream. There is a ion source electrode downstream of the at least one cathode, and the at least one cathode and the ion source electrode have the same voltage applied such that the electrons enter the space encompassed by the ion source electrode, some of the electrons as they travel within the ion source electrode striking an ionizable gas to create ions.
    Type: Application
    Filed: December 27, 2012
    Publication date: July 3, 2014
    Applicant: SCHLUMBERGER TECHNOLOGY CORPORATION
    Inventors: Jani Reijonen, Luke Perkins, Harold Pfutzner
  • Publication number: 20140183376
    Abstract: An ion source for use in a radiation generator tube includes a back passive cathode electrode, a passive anode electrode downstream of the back passive cathode electrode, a magnet adjacent the passive anode electrode, and a front passive cathode electrode downstream of the passive anode electrode. The front passive cathode electrode and the back passive cathode electrode define an ionization region therebetween. At least one ohmically heated cathode is configured to emit electrons into the ionization region. The back passive cathode electrode and the passive anode electrode, and the front passive cathode electrode and the passive anode electrode, have respective voltage differences therebetween, and the magnet generating a magnetic field, such that a Penning-type trap is produced to confine the electrons to the ionization region. At least some of the electrons in the ionization region interact with an ionizable gas to create ions.
    Type: Application
    Filed: December 27, 2012
    Publication date: July 3, 2014
    Applicant: SCHLUMBERGER TECHNOLOGY CORPORATION
    Inventor: Luke Perkins
  • Patent number: 8759788
    Abstract: In one embodiment an ion source includes an arc chamber and an emitter having a surface disposed in the arc chamber, where the emitter is configured to generate a plasma in the arc chamber. The ion source further includes a repeller having a repeller surface positioned opposite the emitter surface, and a hollow cathode coupled to the repeller and configured to provide a feed material into the arc chamber.
    Type: Grant
    Filed: March 11, 2013
    Date of Patent: June 24, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventor: Neil Bassom
  • Publication number: 20140166872
    Abstract: An ion source includes a cathode emitting primary electrons, a cathode grid downstream of the cathode, a reflector electrode downstream of the cathode grid, a reflector grid radially inward of the reflector electrode, and an extractor electrode downstream of the reflector electrode. The cathode and the cathode grid have a voltage difference such that the electric field accelerates the primary electrons on a trajectory toward the extractor electrode. The reflector grid and the extractor electrode have a voltage difference such that the electric field repels the primary electrons on a trajectory away from the extractor electrode and toward the reflector electrode. The cathode and reflector electrode have a voltage difference such that some primary electrons strike the reflector electrode, creating secondary electrons. The reflector grid has a positive potential such that the electric field attracts the primary and secondary electrons into the ionization region where they interact with ionizable gas.
    Type: Application
    Filed: December 19, 2012
    Publication date: June 19, 2014
    Applicant: SCHLUMBERGER TECHNOLOGY CORPORATION
    Inventors: Jani Reijonen, Irina Molodetsky, Kenneth E. Stephenson
  • Patent number: 8729494
    Abstract: An ion source is disclosed wherein a sample is introduced into the sample chamber of the ion source in the gas phase via a sample introduction capillary tube. The sample is directed onto a heated surface coated with an oxidizing reagent such as copper oxide. Carbon in the sample is oxidized to form carbon dioxide. The resulting carbon dioxide molecules are then ionised by electron impact ionization with an electron beam and the resulting ions are passed to a mass analyzer for mass analysis.
    Type: Grant
    Filed: July 16, 2009
    Date of Patent: May 20, 2014
    Assignee: Micromas UK Limited
    Inventor: Robert Harold Bateman
  • Patent number: 8729465
    Abstract: A vacuum measurement device includes a grid (10) and an electron source (20) provided inside a vacuum vessel, and an ion beam (100) extracted outside the grid is captured by an ion collector (40) and is converted into a current signal. The grid (10) is a grid-shaped cylinder, and an ion outlet (11) is opened and elongated in the longitudinal direction along the side surface of the grid (10). The vacuum measurement device includes a primary ion collector (40) capturing specific ions and a secondary ion collector (50) capturing other ions. The gas molecule density of the ion source is obtained from a total current of the primary and secondary ion collectors, and a ratio of the gas molecule density of the specific ions relative to the gas molecule density is obtained from a ratio of the current of the primary ion collector (40) relative to the total current.
    Type: Grant
    Filed: September 28, 2010
    Date of Patent: May 20, 2014
    Assignee: Vaclab Inc.
    Inventor: Fumio Watanabe
  • Patent number: 8664622
    Abstract: An apparatus comprises an ionization chamber for providing ions during a process of ion implantation, and an electron beam source device inside the ionization chamber. The electron beam source device comprises a field emission array having a plurality of emitters for generating electrons in vacuum under an electric field.
    Type: Grant
    Filed: April 11, 2012
    Date of Patent: March 4, 2014
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Hong Hwang, Chun-Lin Chang, Chi-Ming Yang, Chin-Hsiang Lin, Wen-Yu Ku
  • Patent number: 8648604
    Abstract: An ionization gauge to measure pressure and to reduce sputtering yields includes at least one electron source that generates electrons. The ionization gauge also includes a collector electrode that collects ions formed by the collisions between the electrons and gas molecules. The ionization gauge also includes an anode. An anode bias voltage relative to a bias voltage of a collector electrode is configured to switch at a predetermined pressure to decrease a yield of sputtering collisions.
    Type: Grant
    Filed: August 20, 2010
    Date of Patent: February 11, 2014
    Assignee: Brooks Automation, Inc.
    Inventor: Gerardo A. Brucker
  • Patent number: 8618514
    Abstract: A method of manufacturing a semiconductor device includes the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant molecules contain n dopant atoms, where n is an integer number greater than 10. This method enables increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy, while reducing the charge per dopant atom by the factor n.
    Type: Grant
    Filed: November 2, 2011
    Date of Patent: December 31, 2013
    Assignee: SemEquip, Inc.
    Inventors: Thomas N. Horsky, Dale C. Jacobson
  • Publication number: 20130313443
    Abstract: An ion source includes an ion chamber housing defining an ion source chamber, the ion chamber housing having a side with a plurality of apertures. The ion source also includes an antechamber housing defining an antechamber. The antechamber housing shares the side with the plurality of apertures with the ion chamber housing. The antechamber housing has an opening to receive a gas from a gas source. The antechamber is configured to transform the gas into an altered state having excited neutrals that is provided through the plurality of apertures into the ion source chamber.
    Type: Application
    Filed: July 31, 2013
    Publication date: November 28, 2013
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Bon-Woong Koo, Victor Benveniste, Christopher A. Rowland, Craig R. Chaney, Frank Sinclair, Neil J. Bassom
  • Patent number: 8592779
    Abstract: An ionizing device 2 includes an ionization chamber 2a having an ionization space 2b for ionizing sample molecules A, filaments 23a and 23b to have an electron impact on the sample molecules A in the ionization space 2b, to ionize the sample molecules A, and an electric discharge tube 29 to irradiate the sample molecules A in the ionization space 2b with ultraviolet light, to ionize the sample molecules A.
    Type: Grant
    Filed: March 16, 2007
    Date of Patent: November 26, 2013
    Assignees: Hamamatsu Photonics K.K., Rigaku Corporation
    Inventors: Shigeki Matsuura, Yoshihiro Takata, Tadashi Arii, Satoshi Otake
  • Publication number: 20130277570
    Abstract: The invention relates to a device for performing electron capture dissociation on multiply charged cations. Provided is an electron emitter which, upon triggering, emits a plurality of low energy electrons suitable for efficient electron capture reactions to occur. Further, the device contains a particle emitter being located proximate to the electron emitter and being capable, upon triggering, to emit a plurality of high energy charged particles substantially in a direction towards the electron emitter in order that the electron emitter receives a portion of the emitted plurality of high energy charged particles and emission of the plurality of low energy electrons is triggered. A volume capable of containing a plurality of multiply charged cations is located in opposing relation to the electron emitter such that the volume receives the plurality of low energy electrons upon emission as to allow electron capture dissociation to occur.
    Type: Application
    Filed: April 18, 2012
    Publication date: October 24, 2013
    Applicant: BRUKER DALTONICS, INC.
    Inventors: Melvin Andrew PARK, Desmond Allen KAPLAN
  • Publication number: 20130240753
    Abstract: An ion source includes a filament configured to emit thermoelectrons and a cathode having a first side proximate the filament and a second side opposite the first side. The cathode includes a first layer that includes a first material on the first side of the cathode and a second layer on the second side of the cathode. The first layer is between the filament and the second side.
    Type: Application
    Filed: October 25, 2012
    Publication date: September 19, 2013
    Applicant: Samsung Electronics Co., Ltd.
    Inventor: Seiji Kamei
  • Publication number: 20130206978
    Abstract: An accumulating ion source for a mass spectrometer that includes a sample injector (328) introducing sample vapors into an ionization space (115) and an electron emitter (102) emitting a continuous electron beam (104) into the ionization space (115) to generate analyte ions. The accumulating ion source further includes first and second electrodes (108a, 108b) arranged spaced apart in the ionization space (115) for accumulating analyte ions substantially therebetween. The first and second electrodes (108a, 108b) receive periodic extraction energy potentials to accelerate packets of analyte ions from the ionization space (115) along a first axis. An orthogonal accelerator (140) receives the packets of analyte ions along the first axis and periodically accelerates the packets of analyte ions along a second axis substantially orthogonal to the first axis.
    Type: Application
    Filed: August 18, 2011
    Publication date: August 15, 2013
    Applicant: LECO Corporation
    Inventors: Anatoly N. Verenchikov, Yuri Khasin
  • Patent number: 8502161
    Abstract: An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.
    Type: Grant
    Filed: May 10, 2010
    Date of Patent: August 6, 2013
    Assignee: SemEquip, Inc.
    Inventors: Sami K. Hahto, Richard Goldberg, Edward McIntyre, Thomas N. Horsky
  • Publication number: 20130193318
    Abstract: Ion sources for use in mass spectrometry (MS) systems are described. The ion sources each comprise an ion funnel and an ionization source configured to ionize neutral analyte molecules.
    Type: Application
    Filed: November 29, 2012
    Publication date: August 1, 2013
    Applicant: AGILENT TECHNOLOGIES, INC.
    Inventor: AGILENT TECHNOLOGIES, INC.
  • Patent number: 8481927
    Abstract: Gaseous analyte molecules are ionized at atmospheric pressure and provided to an inlet capillary of an ion spectrometer vacuum system by passing the ions through a reaction tube that ends in a conical intermediate piece for a gastight and smooth transition into the inlet capillary. The reaction tube is shaped so that the atmospheric pressure gas stream passing therethrough form the entrance of the tune to the intermediate piece is stably laminar. Analyte molecules from gas chromatographs, spray devices or vaporization devices can be introduced into the entrance of the reaction tube and ionized within the tube by single- or multi-photon ionization, by chemical ionization, by reactant ions or by physical ionization. For single- or multi-photon ionization, a beam from a laser can be passed axially down the reaction tube. Reactant ions can be produced by any means outside of the reaction tube and mixed with the analyte molecules within the tube.
    Type: Grant
    Filed: August 10, 2010
    Date of Patent: July 9, 2013
    Assignee: Bruker Daltonik, GmbH
    Inventors: Jochen Franzen, Thorsten Benter, Hendrik Kersten, Matthias Lorenz, Klaus J. Brockmann