Electron Bombardment Type Patents (Class 250/427)
  • Publication number: 20080237484
    Abstract: A plasma source, particularly for disinfection of wounds, comprising: an ionization chamber having an inlet for introducing a gas into the ionization chamber and further having an outlet for dispensing the ionized gas onto an object; several ionization electrodes being disposed within the ionization chamber for ionizing the gas and a predetermined ratio of the electrode-electrode distance on the one hand and the electrode-wall distance on the other hand, wherein the ratio is in a range approximately between about 1.8 and about 2.2.
    Type: Application
    Filed: September 11, 2006
    Publication date: October 2, 2008
    Applicants: Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V., Adtec Europe Limited
    Inventors: Gregor Morfill, Tetsuji Shimizu, Bernd Steffes, Shuitsu Fujii
  • Publication number: 20080230714
    Abstract: Embodiments of a gas cluster ion beam apparatus and methods for forming a gas cluster ion beam using a low-pressure process source are generally described herein. In one embodiment, the low-pressure process source is mixed with a high-pressure diluent source in a static pump to form a mixed source, from which a gas cluster jet is generated and ionized to form the gas cluster ion beam. Other embodiments may be described and claimed.
    Type: Application
    Filed: March 22, 2007
    Publication date: September 25, 2008
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Scott Lane
  • Publication number: 20080220596
    Abstract: A system for delivery of low-pressure dopant gas to a high-voltage ion source in the doping of semiconductor substrates, in which undesired ionization of the gas is suppressed prior to entry into the high-voltage ion source, by modulating electron energy upstream of the high-voltage ion source so that electron acceleration effects are reduced to below a level supporting an electronic ionization cascade. The gas delivery system in a specific application includes a gas flow passage, a voltage generator electrically coupled with at least a portion of the gas flow passage to impose an electric field thereon, and an obstructive structure that is deployed to modulate acceleration length of electrons of the low-pressure gas in relation to ionization potential of the gas, to suppress ionization in the gas flow passage.
    Type: Application
    Filed: August 29, 2006
    Publication date: September 11, 2008
    Applicants: ADVANCED TECHNOLOGY MATERIALS, INC., ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: W. Karl Olander, Jose I. Arno, Robert Kaim
  • Patent number: 7420182
    Abstract: This invention features a combined radio frequency (RF) and Hall Effect ion source and plasma accelerator system including a plasma accelerator having an anode and a discharge zone, the plasma accelerator for providing plasma discharge. A gas distributor introduces a gas into the plasma accelerator. A cathode emits electrons attracted to the anode for ionizing the gas and neutralizing ion flux emitted from the plasma accelerator. An electrical circuit coupled between the anode and the cathode having a DC power source provides DC voltage. A magnetic circuit structure including a magnetic field source establishes a transverse magnetic field in the plasma accelerator that creates an impedance to the flow of the electrons toward the anode to enhance ionization of the gas to create plasma and which in combination with the electric circuit establishes an axial electric field in the plasma accelerator.
    Type: Grant
    Filed: April 27, 2006
    Date of Patent: September 2, 2008
    Assignee: Busek Company
    Inventors: Vladimir Hruby, Kurt Hohman, Thomas Brogan
  • Patent number: 7411186
    Abstract: A multimode ionization source with improved ionization characteristics that comprises an electrospray ionization source for providing a charged aerosol, an atmospheric pressure chemical ionization (APCI) source including a corona needle having an end positioned downstream from the electrospray ionization source for producing a discharge that further ionizes the charged aerosol, an assist gas inlet positioned adjacent to the corona needle for providing assist gas, the assist gas facilitating ionization of the charged aerosol by the corona discharge, and a conduit having an orifice for receiving ions from the charged aerosol.
    Type: Grant
    Filed: December 20, 2005
    Date of Patent: August 12, 2008
    Assignee: Agilent Technologies, Inc.
    Inventor: Alexander Mordehai
  • Publication number: 20080179537
    Abstract: An emitting apparatus 50 has a gas cluster generation chamber 2 and a nozzle 3 as means for generating a gas cluster and emitting the gas cluster to a processing object 10. A group of gas clusters jetted from the nozzle 3 is shaped into a gas cluster stream 8 in a beam form when passing through a skimmer 4. Electrons are emitted from an electron gun 12 to the gas cluster stream 8, whereby the gas cluster in the gas cluster stream is ionized.
    Type: Application
    Filed: March 7, 2008
    Publication date: July 31, 2008
    Applicant: Canon Kabushiki Kaisha
    Inventors: Tetsuro Saito, Tatsumi Shoji, Yoichi Fukumiya
  • Patent number: 7405411
    Abstract: In certain example embodiments of this invention, there is provided an ion source including an anode and a cathode. In certain example embodiments, a multi-piece outer cathode is provided. The multi-piece outer cathode allows precision adjustments to be made, thereby permitting adjustment of the magnetic gap between the inner and outer cathodes. This allows improved performance to be realized, and/or prolonged operating life of certain components. This may also permit multiple types of gap adjustment to be performed with different sized outer cathode end pieces. In certain example embodiments, cathode fabrication costs may also be reduced.
    Type: Grant
    Filed: May 6, 2005
    Date of Patent: July 29, 2008
    Assignee: Guardian Industries Corp.
    Inventor: Hugh A. Walton
  • Patent number: 7381943
    Abstract: The present invention relates to a neutral particle beam processing apparatus. More specifically, the present invention relates to a neutral particle beam processing apparatus comprising a plasma discharging space inside which processing gases are converted to plasma ions through a plasma discharge, a heavy metal plate which converts the plasma ions into neutral particles through collisions, a plasma limiter which prevents plasma ions and electrons from passing through and allows the neutral particles produced by collisions of the plasma ions with the heavy metal plate to pass through, and a treating housing inside which a substrate to be treated is located, wherein the plasma discharging space is sandwiched between the heavy metal plate and the plasma limiter.
    Type: Grant
    Filed: November 27, 2004
    Date of Patent: June 3, 2008
    Assignees: Korea Basic Science Institute, SEM Technology, Co., Ltd.
    Inventors: Bong-Ju Lee, Suk-Jae Yoo, Hag-Joo Lee
  • Publication number: 20080116369
    Abstract: An ion source includes structure having separate first and second ion volumes therein, and electron source structure having first and second portions that selectively supply electrons to the first and second ion volumes, respectively. The electron source structure has a first operational mode in which the second portion substantially prevents a supply of electrons to the second ion volume and in which electrons are supplied to the first ion volume under control of the first portion, and has a second operational mode in which the first portion substantially prevents a supply of electrons to the first ion volume and in which electrons are supplied to the second ion volume under control of the second portion.
    Type: Application
    Filed: November 17, 2006
    Publication date: May 22, 2008
    Inventors: Edward B. McCauley, Scott T. Quarmby
  • Patent number: 7365339
    Abstract: A cathode holder of a tubular shape is inserted into an opening for a cathode of a plasma generating chamber with a tip of the cathode holder positioned outward from an inner wall surface of the plasma generating chamber. The cathode is held in the cathode holder so that a front surface of the cathode will be positioned outward from the inner wall surface. In the cathode holder is provided a tubular first heat shield surrounding the cathode with a space provided between the first heat shield and the cathode, the tip of the first heat shield positioned outward from the inner wall surface. At a rear side of the cathode is provided a filament. The gap between the cathode holder and the plasma generating chamber is filled with an electrical insulating material.
    Type: Grant
    Filed: May 17, 2006
    Date of Patent: April 29, 2008
    Assignee: Nissin Ion Equipment Co., Ltd.
    Inventors: Hideki Fujita, Sei Umisedo, Nariaki Hamamoto
  • Patent number: 7365341
    Abstract: An emitting apparatus 50 has a gas cluster generation chamber 2 and a nozzle 3 as means for generating a gas cluster and emitting the gas cluster to a processing object 10. A group of gas clusters jetted from the nozzle 3 is shaped into a gas cluster stream 8 in a beam form when passing through a skimmer 4. Electrons are emitted from an electron gun 12 to the gas cluster stream 8, whereby the gas cluster in the gas cluster stream is ionized.
    Type: Grant
    Filed: December 1, 2005
    Date of Patent: April 29, 2008
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tetsuro Saito, Tatsumi Shoji, Yoichi Fukumiya
  • Patent number: 7361915
    Abstract: One or more aspects of the present invention pertain to stabilizing the current or density of an ion beam within an ion implantation system by selectively adjusting a lone parameter of feed gas flow. Adjusting the gas flow does not necessitate adjustments to other operating parameters and thereby simplifies the stabilization process. This allows the beam current to be stabilized relatively quickly so that ion implantation can begin promptly and continue uninterrupted. This improves throughput while reducing associated implantation costs.
    Type: Grant
    Filed: November 30, 2005
    Date of Patent: April 22, 2008
    Assignee: Axcelis Technologies, Inc.
    Inventors: Robert D. Rathmell, Bo H. Vanderberg
  • Publication number: 20080067412
    Abstract: An exemplary ion source for creating a stream of ions has an aluminum alloy arc chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A temperature sensor monitors temperatures within the arc chamber and provides a signal related to sensed temperature. A controller monitors sensed temperature as measured by the sensor and adjusts the temperature to maintain the sensed temperature within a range.
    Type: Application
    Filed: May 19, 2006
    Publication date: March 20, 2008
    Inventors: Bo H. Vanderberg, Victor M. Beneviste, John F. Fallon, IIya Pokidov
  • Patent number: 7332714
    Abstract: In a quadrupole mass spectrometer which measures partial pressure strength according to a gas type in a vacuum system from ion current intensity, a quadrupole mass spectrometer with a total pressure measurement electrode has a total pressure measurement electrode for examining an ion density disposed in a demarcation space which is comprised of a grid electrode and an ion focusing electrode. And, a vacuum system is provided with only the quadrupole mass spectrometer which measures partial pressure strength according to a gas type in the vacuum system from an ion current intensity and does not have an ionization vacuum gauge other than the quadrupole mass spectrometer.
    Type: Grant
    Filed: March 15, 2006
    Date of Patent: February 19, 2008
    Assignee: Vaclab Inc.
    Inventors: Fumio Watanabe, Reiki Watanabe
  • Patent number: 7332345
    Abstract: A chemical sensing apparatus and method for the detection of sub parts-per-trillion concentrations of molecules in a sample by optimizing electron utilization in the formation of negative ions is provided. A variety of media may be sampled including air, seawater, dry sediment, or undersea sediment. An electrostatic mirror is used to reduce the kinetic energy of an electron beam to zero or near-zero kinetic energy.
    Type: Grant
    Filed: November 12, 2002
    Date of Patent: February 19, 2008
    Assignee: California Institute of Technology
    Inventors: Murray R. Darrach, Ara Chutjian
  • Publication number: 20080029700
    Abstract: The object of the present invention is to enable the optical axis of an electron beam of a field emission electron gun mounting thereon an electron gun composed of a fibrous carbon material to be adjusted easily. Moreover, it is also to obtain an electron beam whose energy spread is narrower than that of the electron gun. Further, it is also to provide a high resolution electron beam applied device mounting thereon the field emission electron gun. The means for achieving the objects of the present invention is in that the fibrous carbon material is coated with a material having a band gap, in the field emission electron gun including an electron source composed of a fibrous carbon material and an electrically conductive base material for supporting the fibrous carbon material, an extractor for field-emitting electrons, and an accelerator for accelerating the electrons. Moreover, it is also to apply the field emission electron gun to various kinds of electron beam applied devices.
    Type: Application
    Filed: August 1, 2007
    Publication date: February 7, 2008
    Inventors: TADASHI FUJIEDA, Makoto Okai, Kishio Hidaka, Mitsuo Hayashibara, Shunichi Watanabe
  • Patent number: 7320733
    Abstract: An electron bombardment heating apparatus, in which thermions emitted from filaments 9 are accelerated and impinge upon a heating plate 2, so as to heat the heating plate 2, wherein a peripheral wall of a heated material supporting member 1 having a heating plate as a ceiling thereof is made of multi-staged peripheral wall portions 13a and 13b, positioned vertically and having a different radius, and those peripheral wall portions 13a and 13b are connected with each other by means of a ring-like horizontal wall 5. With this, thermal stress can be mitigated, which is caused due to a difference in temperature between the lower end portion of the heated material supporting member 1 and the heating plate 2 when heating up the heating plate 2, thereby causing no breakage in the heated material supporting member when conducting heating and cooling upon the heating plate, repetitively.
    Type: Grant
    Filed: April 8, 2004
    Date of Patent: January 22, 2008
    Assignee: Sukegawa Electric Co., Ltd.
    Inventor: Shigetaka Haga
  • Patent number: 7291845
    Abstract: In a method for inhibiting space charge-related effects in an ion source, an electron beam is directed into a chamber to produce ions from sample material in the chamber. A voltage pulse is applied to the chamber to perturb an electron space charge present in the chamber. The ion source may be an electron impact ionization (EI) apparatus. The ion source may operated in conjunction with a mass spectrometry system.
    Type: Grant
    Filed: April 26, 2005
    Date of Patent: November 6, 2007
    Assignee: Varian, Inc.
    Inventors: Roy Moeller, Felician Muntean, Urs Steiner
  • Publication number: 20070221862
    Abstract: A mass spectrometer employing an electrostatic ion trap and electron trap. An ion source generates a stream of ions that are directed into the mass spectrometer. The mass spectrometer includes an ion-focusing region for focusing the ions along a predetermined axis. The focused ions are injected into the electrostatic ion trap where they oscillate between two electrostatic mirror assemblies. A stream of electrons is directed into the electron trap, where the electrons interact with the ions at an interaction region between adjacent electrode assemblies of the ion trap and the electron trap. The interaction between the ions and electrons creates ions, fragments and particles of various masses that can be detected by a pick-up electrode.
    Type: Application
    Filed: February 20, 2007
    Publication date: September 27, 2007
    Applicant: Wayne State University
    Inventors: Arthur Suits, Myung Hwa Kim, Brian D. Leskiw
  • Patent number: 7271397
    Abstract: A mass spectrometer is provided herein and is configured to have two ionization sources, in which a first ionization source, such as MALDI, ESI and the like, which is capable of providing in addition to ions a set of normally intractable desorbed neutrals that are ionized by a second EI source coupled with the first source.
    Type: Grant
    Filed: July 17, 2003
    Date of Patent: September 18, 2007
    Assignee: The Johns Hopkins University
    Inventors: Wayne A. Bryden, Robert J. Cotter, Scott A. Ecelberger
  • Patent number: 7259379
    Abstract: An electron impact ion source includes an ionization chamber in which a first rf multipole field can be generated and an ion guide positioned downstream from the ionization chamber in which a second rf multipole field can be generated wherein electrons are injected into the ionization chamber along the axis (on-axis) to ionize an analyte sample provided to the ionization chamber.
    Type: Grant
    Filed: November 9, 2005
    Date of Patent: August 21, 2007
    Assignee: Agilent Technologies, Inc.
    Inventors: Mingda Wang, Edward C. Cirimele
  • Patent number: 7247863
    Abstract: An apparatus and a method are disclosed for rapidly controlling the rate of ion generation in an ion source. The ion source includes an ion chamber, filament-cathode, a mirror electrode, and a grid. The ion source is operable to generate an ion beam from the ionization of ion precursor gas present in the ion chamber by electrons emitted from the filament. The rate of ion generation is controlled by modifying the potential of the grid relative to the filament to control the number of electrons available for ionization between the grid and the mirror electrode. An alternative embodiment for rapidly controlling the rate of ion generation in an ion source is also disclosed.
    Type: Grant
    Filed: October 19, 2001
    Date of Patent: July 24, 2007
    Assignee: Axcellis Technologies, Inc.
    Inventor: Donald W. Berrian
  • Patent number: 7220976
    Abstract: A filament includes a filament rod having an electron-emitting portion, a pair of leads, and a pair of connection portions. The electron-emitting portion is disposed in the arc chamber. The leads extend from the sidewall of the arc chamber to the outside of the arc chamber. The leads are connected to a filament power source. The connecting portions extend from the sidewall of the arc chamber to the inside of the arc chamber. The connection portions are connected between the electron-emitting portion and the leads. The connection portions have an electrical resistance less than that of the electron-emitting portion. Thus, electrons are thermoelectrically emitted into the arc chamber from the electron emission portion rather than the connection portions. An electron emission rate may also be increased. In addition, since the filament has a longer useful life, downtime of an ion implanter including the ion source may be decreased.
    Type: Grant
    Filed: December 16, 2004
    Date of Patent: May 22, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Young-Byeong Joo
  • Patent number: 7205552
    Abstract: Monotomic boron ions for ion implantation are supplied from decaborane vapour. The vapour is fed to a plasma chamber and a plasma produced in the chamber with sufficient energy density to disassociate the decaborane molecules to produce monatomic boron ions in the plasma.
    Type: Grant
    Filed: May 19, 2005
    Date of Patent: April 17, 2007
    Assignee: Applied Materials, Inc.
    Inventor: Richard David Goldberg
  • Patent number: 7204921
    Abstract: A vacuum apparatus which can easily regenerate plasma is provided. A matching box used in the vacuum apparatus can vary the impedance thereof by varying the magnitudes of the inductance of variable inductance elements. Controlling the magnitude of direct current makes it possible to control the magnitudes of inductance of the variable inductance elements so that it is possible to carry out matching operation at high speed.
    Type: Grant
    Filed: September 9, 2003
    Date of Patent: April 17, 2007
    Assignee: ULVAC Inc.
    Inventors: Taro Yajima, Minoru Akaishi, Yoshikuni Horishita
  • Patent number: 7205540
    Abstract: An electron beam apparatus is provided for reliably measuring a potential contrast and the like at a high throughput in a simple structure. The electron beam apparatus for irradiating a sample, such as a wafer, formed with a pattern with an electron beam to evaluate the sample comprises an electron-optical column for accommodating an electron beam source, an objective lens, an E×B separator, and a secondary electron beam detector; a stage for holding the sample, and relatively moving the sample with respect to the electron-optical column; a working chamber for accommodating the stage and capable of controlling the interior thereof in a vacuum atmosphere; a loader for supplying a sample to the stage; a voltage applying mechanism for applying a voltage to the sample, and capable of applying at least two voltages to a lower electrode of the objective lens; and an alignment mechanism for measuring a direction in which dies are arranged on the sample.
    Type: Grant
    Filed: November 1, 2005
    Date of Patent: April 17, 2007
    Assignee: Ebara Corporation
    Inventors: Mamoru Nakasuji, Takao Kato, Kenji Watanabe, Shoji Yoshikawa, Tohru Satake, Nobuharu Noji
  • Patent number: 7196337
    Abstract: This invention relates to an apparatus for processing particles. The apparatus comprises a particle source having an exist aperture; an extraction electrode located at the exist aperture; an acceleration electrode adjacent to the extraction electrode; a processing compartment adjacent to the acceleration electrode; and a deceleration electrode located adjacent to the processing compartment. The invention also relates to methods of processing particles and to particles processed by the apparatus and methods of the invention.
    Type: Grant
    Filed: April 22, 2004
    Date of Patent: March 27, 2007
    Assignee: Cabot Microelectronics Corporation
    Inventor: David G. Mikolas
  • Patent number: 7183559
    Abstract: In certain example embodiments of this invention, there is provide an ion source including an anode and a cathode. In certain example embodiments, the cathode does not overhang over the anode, or vice versa. Since no, or fewer, areas of overhang are provided between the anode and cathode, there is less undesirable build-up on the anode and/or cathode during operation of the ion source so that the source can run more efficiently. Moreover, in certain example embodiments, an insulator such as a ceramic or the like is provided between the anode and cathode.
    Type: Grant
    Filed: November 12, 2004
    Date of Patent: February 27, 2007
    Assignee: Guardian Industries Corp.
    Inventors: Henry A. Luten, Vijayen S. Veerasamy
  • Patent number: 7138768
    Abstract: An indirectly heated cathode ion source includes an arc chamber housing that defines an arc chamber, an indirectly heated cathode and a filament for heating the cathode. The cathode may include an emitting portion having a front surface, a rear surface and a periphery, a support rod attached to the rear surface of the emitting portion, and a skirt extending from the periphery of the emitting portion. A cathode assembly may include the cathode, a filament and a clamp assembly for mounting the cathode and the filament in a fixed spatial relationship and for conducting electrical energy to the cathode and the filament. The filament is positioned in a cavity defined by the emitting portion and the skirt of the cathode. The ion source may include a shield for inhibiting escape of electrons and plasma from a region outside the arc chamber in proximity to the filament and the cathode.
    Type: Grant
    Filed: May 23, 2002
    Date of Patent: November 21, 2006
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Peter E. Maciejowski, Joseph C. Olson, Shengwu Chang, Bjorn O. Pedersen, Leo V. Klos, Jr., Daniel Distaso, Curt D. Bergeron
  • Patent number: 7116054
    Abstract: A Hall-type ion source for generation of ion beams for technological applications presents itself a hybrid ion source, where properties of closed drift systems and end-Hall ion sources are combined for more efficient operation. An ion source has shorter central magnetic pole than regular closed drift ion source with magnetic screens that provide positive magnetic gradient in an ion source's discharge channel. An ion source with these combined properties has higher ratio of ion beam current to discharge current than end-Hall ion source and wider range of discharge parameters than closed drift ion source.
    Type: Grant
    Filed: April 21, 2005
    Date of Patent: October 3, 2006
    Inventor: Viacheslav V. Zhurin
  • Patent number: 7102139
    Abstract: An ion implanter has a source arc chamber including a conductive end wall at a repeller end of the arc chamber, the end wall having a central portion surrounding an opening. A ceramic insulator is secured to an outer surface of the end wall, such as by peripheral screw threads engaging mating threads at the periphery of a recessed area of the end wall. A conductive repeller has a narrow shaft secured to the insulator and extending through the end wall opening, and a body disposed within the source arc chamber adjacent to the end wall. The end wall, insulator and repeller are configured to form a continuous vacuum gap between the central portion of the end wall and (i) the repeller body, (ii) the repeller shaft, and (iii) the insulator. The insulator interior surface can have a ridged cross section.
    Type: Grant
    Filed: January 27, 2005
    Date of Patent: September 5, 2006
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell J. Low, Eric R. Cobb, Joseph C. Olson, Leo V. Klos
  • Patent number: 7067821
    Abstract: A flood gun 10 for charge neutralization of an analysis region Ra of a sample S downstream of the flood gun, comprising: a first source 30 of electrons; a second source 50 of positively charged particles; and an extraction and focusing assembly 60,64, arranged to: (i) extract a first, electron beam from the first source and focus the first beam to a first flood area Ae at the analysis region; and (ii) extract a second, positive particle beam from the second source and focus the second beam to a second flood area Ai at the analysis region. The electron beam and the positive particle beam may both be extracted and focused simultaneously, in a single mode of operation or, alternately, in a dual mode of operation. A corresponding method of providing charge neutralization and a spectroscopic system for secondary particle emission analysis are disclosed.
    Type: Grant
    Filed: March 4, 2005
    Date of Patent: June 27, 2006
    Assignee: Thermo Electron Corporation
    Inventors: Bryan Robert Barnard, Alan Rupert Bayly, Michael Hugh Humpherson
  • Patent number: 7057170
    Abstract: A solid state compact ion gauge includes an electron source, a gate electrode, an electron collector, a gas ionizer, an ion anode, and a detector all formed within a cavity of a semiconductor substrate formed of two halves bonded together and having open sides for receiving a gase sample. A sample of gas having multiple gas constituents flows into the cavity from the side where gas molecules collide with electrons flowing from the source to the collector forming ions. The ions are forced under an electric field to the detector which includes a set of detectors for sensing the constituent ions.
    Type: Grant
    Filed: March 12, 2004
    Date of Patent: June 6, 2006
    Assignee: Northrop Grumman Corporation
    Inventor: Carl B. Freidhoff
  • Patent number: 7041984
    Abstract: A releasable anode liner that is fitted within the interior of the anode of an ion source. The cover permits electrons to be projected into the anode wherein any insulating deposits adhere to the interior of the anode liner, thereby increasing the effective life of the anode without premature replacement or repair.
    Type: Grant
    Filed: May 20, 2004
    Date of Patent: May 9, 2006
    Assignee: Inficon, Inc.
    Inventors: Robert E. Ellefson, Louis C. Frees
  • Patent number: 7038203
    Abstract: Ion particles are discharged so as to be influenced by a magnetic field originated from the earth, and collided with high-altitude neutral air to generate high velocity neutral particles through charge exchange. The high velocity neutral particles are analyzed. The distance to the high-altitude neutral air from at least one of the discharging positions of the ion particles and the measured positions of the high velocity neutral particles is determined based upon the period of time between the discharging time of the ion particles and the time the high velocity neutral particles are analyzed. Moreover, the direction of the high-altitude neutral air is determined by measuring the direction of the high velocity neutral particles. In addition, the spatial position of the high-altitude neutral air is determined based upon the measured direction of the high velocity neutral particles.
    Type: Grant
    Filed: January 20, 2004
    Date of Patent: May 2, 2006
    Assignee: Japan Aerospace Exploration Agency
    Inventors: Hitoshi Kuninaka, Yoshiki Yamagiwa
  • Patent number: 7038199
    Abstract: A mass spectrometer and method of mass spectrometry in which polyatomic and doubly charged ion interferences are attenuated by establishing an electron population through which a beam of particles containing elemental sample ions and the interfering ions is passed such that the interfering ions preferentially undergo ion-electron recombination and thus dissociation to remove a significant number of the interfering ions. Means (30 or 32) for providing a population of electrons (34 or 36) in an ICP-MS (22) may comprise a magnetic field means such as an electric coil, or an electron generating device. The population of electrons has an electron number density (>1011 cm?3 to 1014 cm?3), a free electron energy (>0.01 eV to <5 eV) in a region at a low pressure (<10 Torr), such that for a predetermined path length (1–4 cm) of the ions through the electron population, the interfering ions will preferentially be attenuated by the dissociative recombination process.
    Type: Grant
    Filed: March 9, 2004
    Date of Patent: May 2, 2006
    Assignee: Varian Australia PTY LTD
    Inventor: Iouri Kalinitchenko
  • Patent number: 7034290
    Abstract: The invention provides a substrate for use in an ion source of a mass spectrometer system. The substrate may be employed independently or in conjunction with an ion source or a mass spectrometry system. A substrate is provided having at least one pattern recognition site and a carbon nanotube adjacent to the pattern recognition site. Methods of making and ionizing samples using the pattern recognition site and carbon nanotube surface are also disclosed.
    Type: Grant
    Filed: September 24, 2004
    Date of Patent: April 25, 2006
    Assignee: Agilent Technologies, Inc.
    Inventors: Jennifer Lu, Timothy H. Joyce
  • Patent number: 7022999
    Abstract: A multi mode ion source is disclosed that includes an ion source incorporating an ionization chamber for ionizing gas species and configured to have at least two discrete modes of operation; namely, an arc-discharge mode and a non-arc discharge mode of operation.
    Type: Grant
    Filed: April 15, 2004
    Date of Patent: April 4, 2006
    Assignee: SemEquip Inc.
    Inventors: Thomas Neil Horsky, John Noel Williams
  • Patent number: 6998622
    Abstract: An electron impact ion source includes an ionization chamber in which a first rf multipole field can be generated and an ion guide positioned downstream from the ionization chamber in which a second rf multipole field can be generated wherein electrons are injected into the ionization chamber along the axis (on-axis) to ionize an analyte sample provided to the ionization chamber.
    Type: Grant
    Filed: November 17, 2004
    Date of Patent: February 14, 2006
    Assignee: Agilent Technologies, Inc.
    Inventors: Mingda Wang, Edward C. Cirimele
  • Patent number: 6998611
    Abstract: An electron beam apparatus is provided for reliably measuring a potential contrast and the like at a high throughput in a simple structure. The electron beam apparatus for irradiating a sample, such as a wafer, formed with a pattern with an electron beam to evaluate the sample comprises an electron-optical column for accommodating an electron beam source, an objective lens, an ExB separator, and a secondary electron beam detector; a stage for holding the sample, and relatively moving the sample with respect to the electron-optical column; a working chamber for accommodating the stage and capable of controlling the interior thereof in a vacuum atmosphere; a loader for supplying a sample to the stage; a voltage applying mechanism for applying a voltage to the sample, and capable of applying at least two voltages to a lower electrode of the objective lens; and an alignment mechanism for measuring a direction in which dies are arranged on the sample.
    Type: Grant
    Filed: September 5, 2002
    Date of Patent: February 14, 2006
    Assignee: Ebara Corporation
    Inventors: Mamoru Nakasuji, Takao Kato, Kenji Watanabe, Shoji Yoshikawa, Tohru Satake, Nobuharu Noji
  • Patent number: 6984831
    Abstract: A cathode system having a cathode element configured to extend through an aperture in a wall of an arc chamber of an ion implanter system. A gas flow through a spacing between the cathode element and the aperture is restricted by a restriction member. A method of ionizing a source gas and a cathode element incorporating the restriction member are also provided.
    Type: Grant
    Filed: March 5, 2004
    Date of Patent: January 10, 2006
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell J. Low, Joseph C. Olson, Curt D. Bergeron, Eric R. Cobb, Jeffrey A. Burgess
  • Patent number: 6974957
    Abstract: The ionization device of the present invention is intended for use in conjunction with an aerosol TOF MS operating in a continuous mode and is capable of ionizing particulated substances in a wide range of particle masses. In the illustrated embodiment, the ionization unit consists of three coaxial cylindrical bodies having a three aligned longitudinal slits for directing electron beams from externally located electron gun onto the axially arranged flow of droplets. The cylindrical bodies are connected to voltage sources so that the external cylindrical body functions as an anode that extracts electrons from the current-heated filament. The central cylindrical body, in combination with the aforementioned anode, serves as an electron-energy control member for precisely controlling and selecting the energy of electrons that reach the flow of particles, while the inner cylindrical body functions as a decelerating member that can be used for adjusting energy of electrons which reached the flow of particles.
    Type: Grant
    Filed: February 18, 2004
    Date of Patent: December 13, 2005
    Assignee: Nanomat, Inc.
    Inventor: Yuri Glukhoy
  • Patent number: 6958481
    Abstract: An ion source (50) for an ion implanter is provided, comprising a remotely located vaporizer (51) and an ionizer (53) connected to the vaporizer by a feed tube (62). The vaporizer comprises a sublimator (52) for receiving a solid source material such as decaborane and sublimating (vaporizing) the decaborane. A heating mechanism is provided for heating the sublimator, and the feed tube connecting the sublimator to the ionizer, to maintain a suitable temperature for the vaporized decaborane. The ionizer (53) comprises a body (96) having an inlet (119) for receiving the vaporized decaborane; an ionization chamber (108) in which the vaporized decaborane may be ionized by an energy-emitting element (110) to create a plasma; and an exit aperture (126) for extracting an ion beam comprised of the plasma. A cooling mechanism (100, 104) is provided for lowering the temperature of walls (128) of the ionization chamber (108) (e.g., to below 350° C.
    Type: Grant
    Filed: August 22, 2001
    Date of Patent: October 25, 2005
    Assignee: Axcelis Technologies, Inc.
    Inventors: Thomas N. Horsky, Alexander S. Perel, William K. Loizides
  • Patent number: 6919672
    Abstract: A closed drift ion source which includes a channel having an open end, a closed end, and an input port for an ionizable gas. A first magnetic pole is disposed on the open end of the channel and extends therefrom in a first direction. A second magnetic pole disposed on the open end of the channel and extends therefrom in a second direction, where the first direction is opposite to the second direction. The distal ends of the first magnetic pole and the second magnetic pole define a gap comprising the opening in the first end. An anode is disposed within the channel. A primary magnetic field line is disposed between the first magnetic pole and the second magnetic pole, where that primary magnetic field line has a mirror field greater than 2.
    Type: Grant
    Filed: April 10, 2003
    Date of Patent: July 19, 2005
    Assignee: Applied Process Technologies, Inc.
    Inventor: John Madocks
  • Patent number: 6911649
    Abstract: Energy tunable solid state sources of neutral particles are described. In a disclosed embodiment, a halogen particle source includes a solid halide sample, a photon source positioned to deliver photons to a surface of the halide, and a collimating means positioned to accept a spatially defined plume of hyperthermal halogen particles emitted from the sample surface.
    Type: Grant
    Filed: June 21, 2002
    Date of Patent: June 28, 2005
    Assignees: Battelle Memorial Institute, Reed College, University College London
    Inventors: Wayne P. Hess, Alan G. Joly, Daniel P. Gerrity, Kenneth M. Beck, Peter V. Sushko, Alexander L. Shlyuger
  • Patent number: 6911770
    Abstract: A cap can comprise an aperture, and an attenuator may block the aperture during at least one point in time. In one embodiment, the attenuator can include a cover that may be displaced by a spring. In another embodiment, such as an electron gun, may comprise a support cap with an aperture, a displaceable cover that may cover the aperture, and a spring. A material attached to the spring and acting as a fuse may release the spring and expose the aperture after an electrical current blows the “fuse”. In yet another embodiment, a method for using a tube may comprise evacuating the tube while a cover covers an aperture in the support cap of a electron gun that is at least partially in the tube and moving the cover to expose the aperture after the tube is sealed.
    Type: Grant
    Filed: February 1, 2002
    Date of Patent: June 28, 2005
    Assignee: Trepton Research Group, Inc.
    Inventors: Randolph D. Schueller, Duane T. Smith
  • Patent number: 6894296
    Abstract: A multi-inlet arc chamber typically used in the emission of electrons from a plasma-forming gas in a plasma flood system. The chamber includes multiple gas inlet openings for flow of the gas into the chamber to increase turbulent flow of the gas in the chamber. Over time, the turbulent-flowing gas tends to contact various points rather than the same point or points on a filament in the chamber, as electrical current flows through the filament and electrons are emitted from the gas typically for the neutralization of positive charges on an ion-implanted semiconductor wafer substrate. Consequently, the filament is less susceptible to burnout and breakage and has an extended lifetime.
    Type: Grant
    Filed: July 30, 2002
    Date of Patent: May 17, 2005
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventor: Kuo-Hsiung Su
  • Patent number: 6885010
    Abstract: An ion source for use in a mass spectrometer includes an electron emitter assembly configured to emit electron beams, wherein the electron emitter assembly comprises carbon nanotube bundles fixed to a substrate for emitting the electron beams, a first control grid configured to control emission of the electron beams, and a second control grid configured to control energies of the electron beams; an ionization chamber having an electron-beam inlet to allow the electron beams to enter the ionization chamber, a sample inlet for sample introduction, and an ion-beam outlet to provide an exit for ionized sample molecules; an electron lens disposed between the electron emitter assembly and the ionization chamber to focus the electron beams; and at least one electrode disposed proximate the ion-beam outlet to focus the ionized sample molecules exiting the ionization chamber.
    Type: Grant
    Filed: November 12, 2003
    Date of Patent: April 26, 2005
    Assignee: Thermo Electron Corporation
    Inventors: Peter John Traynor, Robert George Wright
  • Patent number: 6878946
    Abstract: An indirectly heated button cathode for use in the ion source of an ion implanter has a button member formed of a slug piece mounted in a collar piece. The slug piece is thermally insulated from the collar piece to enable it to operate at a higher temperature so that electron emission is enhanced and concentrated over the surface of the slug piece. The slug piece and collar piece can be both of tungsten. Instead the slug piece may be of tantalum to provide a lower thermionic work function. The resultant concentrated plasma in the ion source is effective to enhance the production of higher charge state ions, particularly P+++ for subsequent acceleration for high energy implantation.
    Type: Grant
    Filed: September 30, 2002
    Date of Patent: April 12, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Marvin Farley, Takao Sakase, Shu Satoh, Geoffrey Ryding, Peter Rose, Christos Christou
  • Patent number: 6864486
    Abstract: A closed loop exit hole is formed in a magnetically permeable end wall (2) of an enclosure (1) of a closed electron drift ion source. Parts of this end wall separated by the exit hole serve as pole pieces (7 and 8) of the magnetic system and define the first pole gap. The magnetic system includes pole pieces (9 and 10), which define the second pole gap made in the form of a closed loop exit hole and arranged along the direction of ion emission. Magnetomotive force sources (5 and 6) are located in space between two groups of magnetic terminals. The ratio of width of each pole gap and distance between pole pieces of the first (7 and 8) and second (9 and 10) magnetic gaps along the direction of ion emission is not less than 0.05. The invention allows the intensity of the generated ion beam and the energy of ions to be increased, and this is provided by the homogeneous distribution of ion current density across the ion beam section.
    Type: Grant
    Filed: February 11, 2002
    Date of Patent: March 8, 2005
    Assignee: Veeco Instruments, Inc.
    Inventors: Valery V. Alekseev, Vsevolod V. Zelenkov, Mark M. Krivoruchko, John E. Keem