Ion Generation Patents (Class 250/423R)
  • Patent number: 6147345
    Abstract: An improved electrospray ion production method and ion source designed to increase the current generated from the electrospray process. A method and device are disclosed that utilize controlled counter-ion impingement onto an electrospray cone-jet in order to increase the total current of the spray and impart additional energy into the surface of the cone-jet. Gas-phase counter-ions are generated external to the needle and attracted by the high field gradients into the surface of the electrospray cone-jet. The counterions impinging into the surface of the electrospray cone-jet will dissolve and participate directly or indirectly in an increased electron transfer rate at the needle electrode. This process results in increased total analyte ion transfer to the cone-jet surface, increased charge on droplets, and increased transport of analyte from the liquid into the gas phase.
    Type: Grant
    Filed: October 7, 1997
    Date of Patent: November 14, 2000
    Assignee: Chem-Space Associates
    Inventor: Ross C. Willoughby
  • Patent number: 6147354
    Abstract: A universal cold-cathode type ion source with closed-loop electron drifting and with ion-beam propagation direction perpendicular to the plane of electron drifting is intended for uniformly treating stationary or moveable objects. Treatment procedures include cleaning, activation, polishing, thin-film coating, or etching. The ion source of the invention allows for adjusting beam parameters and configurations and has an adjustable dimensions of the ionization space between the anode and the cathode. In a preferred embodiment, the adjustment is carried out by moving the anode with respect to the cathode. The moveable anode is shifted in the direction of propagation of the ion beam or in the opposite direction, whereby the tubular ion beam is either converged or diverged. As a result, it becomes possible to adjust the surface area being treated and characteristics of the ion beam such as average energy of ions in the beam and composition of the beam, in case of a multiple-component working medium.
    Type: Grant
    Filed: July 2, 1998
    Date of Patent: November 14, 2000
    Inventors: Yuri Maishev, James Ritter, Leonid Velikuv
  • Patent number: 6147346
    Abstract: A mass spectrometer with an ionizing chamber in which either of an NCI ion source for producing negative ions and a PCI ion source for producing positive ions is placed. The NCI ion source has a first gas inlet and a second gas inlet, while the PCI ion source has only one gas inlet. In the wall of the ionizing chamber are provided a sample gas inlet and a reaction gas inlet. At an end of the sample gas inlet inside of the ionizing chamber is provided a splitter having a first branch and a second branch. When the NCI ion source is placed in the ionizing chamber, the first gas inlet is connected to the first branch, the second gas inlet is connected to the reaction gas inlet inside of the ionizing chamber, and the second branch is left unconnected inside of the ionizing chamber. By adequately adjusting the flow resistances of the first and second branches, a desired portion of the reference gas from the sample gas source can be supplied to the NCI ion source when a calibration is performed.
    Type: Grant
    Filed: September 17, 1998
    Date of Patent: November 14, 2000
    Assignee: Shimadzu Corporation
    Inventor: Hiroto Itoi
  • Patent number: 6135128
    Abstract: A method and system for in-process cleaning of an ion source (12) is provided. The ion source (12) comprises (i) a plasma chamber (22) formed by chamber walls (112, 114, 116) that bound an ionization zone (120); (ii) a source of ionizable dopant gas (66) and a first mechanism (68) for introducing said ionizable dopant gas into said plasma chamber; (iii) a source of cleaning gas (182) and a second mechanism (184) for introducing said cleaning gas into said plasma chamber; and (iv) an exciter (130) at least partially disposed within said chamber for imparting energy to said ionizable dopant gas and said cleaning gas to create a plasma within said plasma chamber. The plasma comprises disassociated and ionized constituents of said dopant gas and disassociated and ionized constituents of said cleaning gas.
    Type: Grant
    Filed: March 27, 1998
    Date of Patent: October 24, 2000
    Assignee: Eaton Corporation
    Inventors: Michael A. Graf, Victor M. Benveniste
  • Patent number: 6130507
    Abstract: The ion source of the invention emits ion beams radially inwardly or radially outwardly from the entire periphery of the closed-loop ion-emitting slit. In one embodiment, a tubular or oval-shaped hollow body, which also functions as a cathode, contains a similarly-shaped concentric anode spaced from the inner walls of the cathode at a distance required to form an ion-generating and accelerating space. The cathode has a continuous ion-emitting slit which is aligned with the position of the anode and is concentric thereto. A magnetic-field generation means is located inside the ring-shaped anode. When the ion source is energized by inducing an magnetic field, connecting the anode to a positive pole of the electric power supply unit, the cathode to a negative pole of the power supply unit, and supplying a working medium into the hollow housing, the electrons begin to drift in the annular space between the anode and cathode in the same direction in which the ions are emitted from the annular slit.
    Type: Grant
    Filed: September 28, 1998
    Date of Patent: October 10, 2000
    Assignee: Advanced Ion Technology, Inc
    Inventors: Yuri Maishev, James Ritter, Yuri Terentiev, Leonid Velikov
  • Patent number: 6130433
    Abstract: The present invention relates to an ion source chamber of a high energy implanter. The ion source chamber comprises a main chamber for generating ions for ion implantation, a vent-pipe having two open ends, one end of the vent-pipe being connected to the main chamber for releasing air from the main chamber, a releasing valve connected to another end of the vent-pipe for releasing the air in the main chamber when the pressure of the air in the main chamber exceeds a predetermined pressure, and a filtering device installed between the vent-pipe and the releasing valve for filtering impurities contained in the air carried by the vent-pipe so as to prevent the impurities from falling into the releasing valve.
    Type: Grant
    Filed: May 3, 1999
    Date of Patent: October 10, 2000
    Assignee: Mosel Vitelic Inc.
    Inventors: Pei-Wei Tsai, Hua-Jen Tseng, Dong-Tay Tsai, Chih-Hsien Chang
  • Patent number: 6130436
    Abstract: An ion beam generator includes an ion beam source for generating an ion beam, an acceleration/deceleration column for selectably accelerating or decelerating ions in the ion beam to desired energies, a source filter positioned between the ion beam source and the acceleration/deceleration column for removing first undesired species from the ion beam, and a mass analyzer positioned downstream of the acceleration/deceleration column for removing second undesired species from the ion beam. The ion beam generator supplies an energetic ion beam having a low level of energy and mass contaminants. The ion beam generator may be utilized in an ion implanter.
    Type: Grant
    Filed: June 2, 1998
    Date of Patent: October 10, 2000
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Anthony Renau, Charles McKenna
  • Patent number: 6118645
    Abstract: An air ionizing apparatus that produces both positive and negative ions has a housing with air inlet and outlet passages, a plurality of spaced apart air ionizing electrodes and a high voltage supply which applies positive and negative voltages to separate electrodes. A fan creates an airflow that carries the ions out of the housing, the fan preferably being between the electrodes and the outlet passages to promote intermixing of positive and negative ions.
    Type: Grant
    Filed: April 6, 1995
    Date of Patent: September 12, 2000
    Assignee: Ion Systems, Inc.
    Inventor: Leslie W. Partridge
  • Patent number: 6113851
    Abstract: An apparatus and process for accomplishing low-temperature sterilization in a plasma generated using a variety of gas molecules. The plasma is generated using a hollow cathode discharge device of design that permits the device to be of commercially practical size and provides for the generation of moderate but extremely consistent plasma density throughout the chamber, thereby assuring sterilization of all items placed therein.
    Type: Grant
    Filed: February 28, 1997
    Date of Patent: September 5, 2000
    Assignee: Phygen
    Inventors: Igor A. Soloshenko, Vyacheslav V. Tsiolko, Vladimir A. Khomich
  • Patent number: 6111252
    Abstract: A mass spectrometer ionization cell includes a micropoint type cold cathode which emits electrons, an amagnetic material anode forming an ionization cage positively biased relative to the cathode and including an entry slot for emitted electrons facing the cathode, and an ion collector electrode which is held at a potential lower than that of the cathode. The electrode is disposed laterally of and outside the space between the cathode and the anode and extends from the cathode to the anode. An axial magnetic field is generated in the cathode-anode direction.
    Type: Grant
    Filed: July 1, 1998
    Date of Patent: August 29, 2000
    Assignee: Alcatel
    Inventor: Didier Pierrejean
  • Patent number: 6107635
    Abstract: High ionization of atoms and molecules is a requirement in several atomic and plasma studies and studies of radiation spectra, in the production of lasers and in industrial applications of various kinds. Most often, ionization of atoms is limited to the removal of the outermost electrons only, for doing which well-known techniques exist. Extraction of electrons from the core shells strongly bound to the atoms, especially the heavy atoms, is difficult. Removal of these electrons is however necessary to achieve a high level of ionization or total ionization demanded in several applications. The method of the present invention employs positron annihilation in flight as a means of eliminating the electrons of the core shells of atoms, especially in the case of elements of large atomic number, so that total or near-total ionization is possible. The method is particularly relevant in producing inner-shell ionization in plasmas and assembles of heavy ions.
    Type: Grant
    Filed: June 11, 1998
    Date of Patent: August 22, 2000
    Inventor: Jose Chakkoru Palathingal
  • Patent number: 6107626
    Abstract: A device and method for forming ions by inductive ionization is disclosed. The device is an ion source that includes a capacitor having a pair of electrodes separated by a dielectric material. The method of the invention uses the capacitor-based ion source to form positive and negative ions including multiply-charged ions.
    Type: Grant
    Filed: February 9, 1999
    Date of Patent: August 22, 2000
    Assignee: The University of Washington
    Inventors: Houle Wang, Murray Hackett
  • Patent number: 6107634
    Abstract: An ion source (50) for an ion implanter is provided, comprising: (i) a sublimator (52) having a cavity (66) for receiving a source material (68) to be sublimated and for sublimating the source material; (ii) an ionization chamber (58) for ionizing the sublimated source material, the ionization chamber located remotely from the sublimator; (iii) a feed tube (62) for connecting the sublimator (52) to the ionization chamber (58); and (iv) a heating medium (70) for heating at least a portion of the sublimator (52) and the feed tube (62). A control mechanism is provided for controlling the temperature of the heating medium (70). The control mechanism comprises a heating element (80) for heating the heating medium (70), a pump (55) for circulating the heating medium, at least one thermocouple (92) for providing temperature feedback from the heating medium (70), and a controller (56) responsive to the temperature feedback to output a first control signal (94) to the heating element.
    Type: Grant
    Filed: April 30, 1998
    Date of Patent: August 22, 2000
    Assignee: Eaton Corporation
    Inventor: Thomas N. Horsky
  • Patent number: 6094012
    Abstract: Multicusp ion sources are capable of producing ions with low axial energy spread which are necessary in applications such as ion projection lithography (IPL) and radioactive ion beam production. The addition of a radially extending magnetic filter consisting of a pair of permanent magnets to the multicusp source reduces the energy spread considerably due to the improvement in the uniformity of the axial plasma potential distribution in the discharge region. A coaxial multicusp ion source designed to further reduce the energy spread utilizes a cylindrical magnetic filter to achieve a more uniform axial plasma potential distribution. The coaxial magnetic filter divides the source chamber into an outer annular discharge region in which the plasma is produced and a coaxial inner ion extraction region into which the ions radially diffuse but from which ionizing electrons are excluded. The energy spread in the coaxial source has been measured to be 0.6 eV.
    Type: Grant
    Filed: November 6, 1998
    Date of Patent: July 25, 2000
    Assignee: The Regents of the University of California
    Inventors: Ka-Ngo Leung, Yung-Hee Yvette Lee
  • Patent number: 6084241
    Abstract: A method of manufacturing a semiconductor device includes creating ions in a chamber (201), using the ions to generate sputtered material from a target (241, 242) in the chamber (201), creating other ions from the sputtered material in the chamber (201), extracting the other ions out of the chamber (201), and implanting the other ions into the wafer (111).
    Type: Grant
    Filed: June 1, 1998
    Date of Patent: July 4, 2000
    Assignee: Motorola, Inc.
    Inventor: Joseph W. Sitter
  • Patent number: 6072182
    Abstract: The present invention provides an improved electron ionizer for use in a quadrupole mass spectrometer. The improved electron ionizer includes a repeller plate that ejects sample atoms or molecules, an ionizer chamber, a cathode that emits an electron beam into the ionizer chamber, an exit opening for excess electrons to escape, at least one shim plate to collimate said electron beam, extraction apertures, and a plurality of lens elements for focusing the extracted ions onto entrance apertures.
    Type: Grant
    Filed: October 1, 1998
    Date of Patent: June 6, 2000
    Assignee: California Institute of Technology
    Inventors: Ara Chutjian, Murray R. Darrach, Otto J. Orient
  • Patent number: 6064156
    Abstract: The design and manufacturing processes for Hollow Cathode Assemblies (HCA that operate over a broad range of emission currents up to 30 Amperes, at low potentials, with lifetimes in excess of 17,500 hours. The processes include contamination control procedures which cover hollow cathode component cleaning procedures, gas feed system designs and specifications, and hollow cathode activation and operating procedures to thereby produce cathode assemblies that have demonstrated stable and repeatable operating conditions, for both the discharge current and voltage. The HCA of this invention provides lifetimes of greater than 10,000 hours, and expected lifetimes of greater than 17,500 hours, whereas the present state-of-the-art is less than 500 hours at emission currents in excess of 1 Ampere.
    Type: Grant
    Filed: September 14, 1998
    Date of Patent: May 16, 2000
    Assignee: The United States of America as represented by the Administrator of NASA
    Inventors: Michael J. Patterson, Timothy R. R. Verhey, George C. Soulas
  • Patent number: 6064070
    Abstract: The invention relates to a radioactive ion source for generation of low-energy .alpha. or .beta. radiation. Both the activity of the source as well as the range of radiation can be adjusted to the respective application. Due to a carrier layer of semiconductive material, release of radioactive substances is prevented.
    Type: Grant
    Filed: July 14, 1998
    Date of Patent: May 16, 2000
    Assignee: Bruker-Saxonia Analytik GmbH
    Inventors: Roland Schnurpfeil, Stefan Klepel
  • Patent number: 6060836
    Abstract: A plasma generating apparatus has a plasma-generating vessel into which a gas is introduced. A coaxial line is inserted into the plasma-generating vessel. The coaxial line is insulated from the vessel with an insulator. The coaxial line has a central conductor and an outer conductor, to both of which microwave is supplied from a magnetron. That part of the central conductor which is located inside the plasma-generating vessel has, disposed therein, permanent magnets which form a cusp field. A seed plasma is formed around the permanent magnets by microwave discharge. A direct-current voltage is applied from a direct-voltage source between the outer conductor 24 and the plasma-generating vessel. Upon this application, electrons in the seed plasma move toward the inner wall of the plasma-generating vessel and are accelerated to ionize the gas. The ionized gas serves as seeds to cause arc discharge between the outer conductor and the plasma-generating vessel to generate a main plasma.
    Type: Grant
    Filed: February 13, 1998
    Date of Patent: May 9, 2000
    Assignee: Nissin Electric Co., Ltd.
    Inventors: Shuichi Maeno, Yasunori Ando, Yasuhiro Matsuda
  • Patent number: 6060718
    Abstract: An attenuator (90) for an ion source (26) is provided. The ion source comprises a plasma chamber (76) in which a gas is ionized by an exciter (78) to create a plasma which is extractable through at least one aperture (64) in an apertured portion (50) of the chamber to form an ion beam. The attenuator (90) comprises a member (90) positioned within the chamber (76) intermediate the exciter (78) and the at least one aperture (64), the member providing at least one first opening (97) corresponding the at least one aperture (64), and being moveable between first and second positions with respect to the at least one aperture. In one embodiment, in the first position, the member is positioned adjacent the aperture (64) to obstruct at least a portion of the aperture, and in the second position the member is positioned away from the aperture (64) so as not to obstruct the aperture.
    Type: Grant
    Filed: February 26, 1998
    Date of Patent: May 9, 2000
    Assignee: Eaton Corporation
    Inventors: Adam A. Brailove, Masateru Sato
  • Patent number: 6039847
    Abstract: A material of ions is sputtered with cesium ions to generate negative ions and, the negative ions are accelerated and mass-separated to obtain a negative ion beam, and a material of thin film is sputtered with the negative ion beam, thereby forming a thin film on a base material.
    Type: Grant
    Filed: March 12, 1998
    Date of Patent: March 21, 2000
    Assignee: Agency of Industrial Science & Technology
    Inventors: Akiyoshi Chayahara, Yuji Horino, Atsushi Kinomura, Nobuteru Tsubouchi, Kanenaga Fujii
  • Patent number: 6040582
    Abstract: A focusing guide for focusing an ion beam passing through the chamber of an ion analyzer is provided. A controllable electric of magnetic field is generated around the focusing guide to direct selected ions through the chamber outlet without significantly reducing ion beam current intensity. The focused ion beam reduces collisions of ions with the chamber and also reduces secondary electron generation which can weaken ion beam intensity and increase ion implantation processing time.
    Type: Grant
    Filed: February 13, 1998
    Date of Patent: March 21, 2000
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Han-sung Kim
  • Patent number: 6037717
    Abstract: A cold-cathode ion source with a closed-loop ion-emitting slit which is provided with means for generating a cyclically-variable, e.g., alternating or pulsating electric or magnetic field in an anode-cathode space. These means may be made in the form of an alternating-voltage generator which generates alternating voltage on one of the cathode parts that form the ion-emitting slit, whereas the other slit-forming part is grounded. The alternating voltage deviates the ion beam in the slit with the same frequency of the alternating voltage. In accordance with another embodiment, the aforementioned means may be an electromagnetic coil which generates a magnetic field which passes through the ion-emitting slit, thus acting on the condition of the spatial-charge formation and, hence, on concentration of ions in the ion beam. The cold-cathode ion source may be of any type, i.e.
    Type: Grant
    Filed: January 4, 1999
    Date of Patent: March 14, 2000
    Assignee: Advanced Ion Technology, Inc.
    Inventors: Yuri Maishev, James Ritter, Leonid Velikov, Alexander Shkolnik
  • Patent number: 6037587
    Abstract: A mass spectrometer having an ionization source containing a chemical ionization chamber, wherein the inner surfaces of the chamber are formed from molybdenum to reduce adsorption, degradation and decomposition of an analyte and to reduce adverse ion/surface reactions is disclosed. A method of reducing adsorption, degradation and decomposition of an analyte and reducing adverse ion/surface reactions in an ionization source containing a chemical ionization chamber of a mass spectrometer including the step of forming the inner surfaces of the chamber from molybdenum is also disclosed. The inner surfaces may formed from molybdenum by constructing the entire chamber or the inner surfaces of the chamber from molybdenum; by depositing, plating or coating molybdenum on the inner surfaces of the chamber; or by a combination thereof. Suitable forms of molybdenum include solid molybdenum, mixtures containing at least 10% by weight molybdenum, and reaction products containing molybdenum.
    Type: Grant
    Filed: October 17, 1997
    Date of Patent: March 14, 2000
    Assignee: Hewlett-Packard Company
    Inventors: Jerry T. Dowell, Jeffery S. Hollis, Charles W. Russ, IV
  • Patent number: 6037600
    Abstract: Disclosed is a safety gas controlling system utilizing a vacuum transducer to detect the pressure of gas transmitted to an ion implantor. If the gas pressure is lower than a predetermined value, an electronic temperature controller starts to operate a heater to heat a safety delivery source cylinder (SDSC), and at the same time heating temperature is fed back with a signal to the electronic temperature controller by a temperature sensor so as to maintain a stable gas pressure. The gas stored in the SDSC expands by heating and the gas is transmitted under an increased but stabilized pressure resulting in minimizing the amount of residual gas in the SDSC.
    Type: Grant
    Filed: July 15, 1998
    Date of Patent: March 14, 2000
    Inventor: Kung Chao Tung
  • Patent number: 6016036
    Abstract: A magnetic filter (90) for an ion source (26) is provided. The ion source comprises a housing defining a plasma confinement chamber (76) in which a plasma including ions is generated by ionizing a source material. The housing includes a generally planar wall (50) in which are formed a plurality of elongated apertures (64) through which an ion beam (84) may be extracted from the plasma. The plurality of elongated openings are oriented substantially parallel to each other and to a first axis (66) which lies within the planar wall the first axis being substantially orthogonal to a second axis (68) which also lies within the planar wall. The magnetic filter (90) is disposed within the plasma confinement chamber (76). The magnetic filter separates the plasma confinement chamber into a primary region (86) and a secondary region (88). The magnetic filter comprises a plurality of parallel elongated magnets (90a-90n), oriented at an angle .theta.
    Type: Grant
    Filed: January 28, 1998
    Date of Patent: January 18, 2000
    Assignee: Eaton Corporation
    Inventor: Adam A. Brailove
  • Patent number: 6002208
    Abstract: A universal cold-cathode type ion source with a closed-loop electron drifting source and with an ion-beam propagation direction perpendicular to the plane of electron drifting is intended for uniformly treating stationary or moveable objects with such processes as cleaning, activation, polishing, thin-film coating, or etching. The ion source of the invention allows adjustment of beam parameters and configurations and has an ion emitting slit of an adjustable geometry. In one embodiment, the adjustment is carried out by changing the width of the slit by shifting moveable parts of the cathode in the direction perpendicular to the direction of the ion beam. In another embodiment the slit configuration is adjusted by shifting a moveable part of the cathode in the direction of the beam propagation. The invention also provides a method for adjusting the shape and configuration of the ion beam with respect to the object to be treated.
    Type: Grant
    Filed: July 2, 1998
    Date of Patent: December 14, 1999
    Assignee: Advanced Ion Technology, Inc.
    Inventors: Yuri Maishev, James Ritter, Leonid Velikov
  • Patent number: 5981955
    Abstract: A plasma chamber for use in isotope enrichment has a microwave feed to the ECRH microwave horns, which feed is led into the plasma chamber behind the sputter plate and perpendicular to the magnetic field for improved microwave waveguide routing and ease of microwave window handling and maintenance. Improved collector design includes a collector assembly placed behind the plasma source comprising a dump plate and flat and shield collector. A ring collector is provided outside the main plasma region in the case where two opposing magnetic mirrors are used and the resonant ions maintained between them. An improved collector assembly can also be provided by disposing the collector assembly in front of the plasma source region and having a double shield-and-slat collector for capturing high energy resonant ions or permitting passage of low energy ions therethrough. Sputter sources for nonconducting materials can be provided by using a thin surface coating applied to a metal backing.
    Type: Grant
    Filed: May 23, 1997
    Date of Patent: November 9, 1999
    Assignee: The Regents of the University of California
    Inventors: Alfred Y. Wong, Glenn B. Rosenthal
  • Patent number: 5982101
    Abstract: A control system and process for operating a charged-particle source which achieves gating of the charged-particle beam without a mechanical shutter and with very short transition between the beam "on" and beam "off" states is presented. The process and control system provide very precise control of the duration of the charged-particle extraction.
    Type: Grant
    Filed: June 27, 1997
    Date of Patent: November 9, 1999
    Assignee: Veeco Instruments, Inc.
    Inventors: Roger P. Fremgen, Jr., John Jacob, Alan V. Hayes, Victor Kanarov, Edward W. Ostan, Abraham J. Navy, Emmanuel N. Lakios, Genrikh Treyger
  • Patent number: 5977549
    Abstract: An apparatus and a method of producing a dual ion/electron source. The ion beam and the electron beam are produced by a charged particle optical system. Using an ion source metal to emit an ion beam or an electron beam. The direction of the ion beam and the electron beam is identical. Neither the particle source nor the sample need to be rotated or shifted.
    Type: Grant
    Filed: May 8, 1998
    Date of Patent: November 2, 1999
    Assignee: United Microelectronics Corp
    Inventors: Yuh-Lin Wang, Lung-Wen Chen
  • Patent number: 5977552
    Abstract: In an efficient ion source BF.sub.3 gas is first passed over solid boron heated in an oven to at least 1100.degree. C. to reduce the BF.sub.3 to BF molecules. It is also proposed to use solid boron as feed stock by heating this in an oven to at least 1800.degree. C. to produce boron vapour. Either a reactive gas such as fluorine or an inert gas such as Argon is also introduced into the arc chamber to react with or sputter off boron condensing on the arc chamber walls.
    Type: Grant
    Filed: December 11, 1997
    Date of Patent: November 2, 1999
    Assignee: Applied Materials, Inc.
    Inventor: Majeed A. Foad
  • Patent number: 5973329
    Abstract: An ion generating apparatus for semiconductor fabricating equipment includes a device for reversing the orientation of a magnetic field. In this manner, the potential energy of a plurality of filaments in the ion generating apparatus are maintained at a substantially equal level, and consequently, asymmetric damage to one of the plurality of filaments due to concentration and collision of the thermal electrons is prevented, thereby prolonging the maintenance cycle of the ion generating apparatus.
    Type: Grant
    Filed: April 22, 1998
    Date of Patent: October 26, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Won-ju Kim
  • Patent number: 5959303
    Abstract: A mass-analysed ion beam generator in which the ion beam is in the form of a thin flat ribbon with its major transverse dimension aligned parallel with the direction of the mass-analysing magnetic field.
    Type: Grant
    Filed: February 1, 1999
    Date of Patent: September 28, 1999
    Inventor: James Harry Freeman
  • Patent number: 5955886
    Abstract: A microliter-sized metastable ionization device with a cavity, a sample gas inlet, a corona gas inlet and a gas outlet. A first electrode has a hollow and disposed in the cavity and is in fluid communication with the sample gas inlet. A second electrode is in fluid communication with the corona gas inlet and is disposed around the first electrode adjacent the hollow end thereof. A gap forming means forms a corona gap between the first and second electrodes. A first power supply is connected to the first electrode and the second power supply is connected to the second electrode for generating a corona discharge across the corona gap. A collector has a hollow end portion disposed in the cavity which is in fluid communications with the gas outlet for the outgassing and detection of ionized gases. The first electrode can be a tubular member aligned concentrically with a cylindrical second electrode. The gap forming means can be in annular disc projecting radially inwardly from the cylindrical second electrode.
    Type: Grant
    Filed: July 10, 1997
    Date of Patent: September 21, 1999
    Assignee: PCP, Inc.
    Inventors: Martin J. Cohen, Robert M. Simac, Roger F. Wernlund
  • Patent number: 5945677
    Abstract: A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.
    Type: Grant
    Filed: January 5, 1999
    Date of Patent: August 31, 1999
    Assignee: The Regents of the University of California
    Inventors: Ka-Ngo Leung, Richard A. Gough, Qing Ji, Yung-Hee Yvette Lee
  • Patent number: 5925886
    Abstract: An ion source comprises a discharge chamber; a wave guide transmitting microwave to generate plasma within said discharge chamber; and a matching tube, located between the discharge chamber and the wave guide, the cross-sectional form of which is tapered in the width thereof in the direction of propagation of the microwave.
    Type: Grant
    Filed: June 19, 1997
    Date of Patent: July 20, 1999
    Assignee: Hitachi, Ltd.
    Inventors: Takayoshi Seki, Katsumi Tokiguchi
  • Patent number: 5920076
    Abstract: An ion beam apparatus comprises a source of ions (1), an evacuatable chamber (11), first and second electrodes (3, 5) disposed within the chamber for forming an ion beam from ions from the ion source, the first electrode being electrically insulated from the second electrode. At least one insulating member (31, 33), at least part of which is within the chamber provides the insulation, wherein a part of the insulating member is positioned adjacent the wall of the chamber. Alternatively, means for feeding coolant proximate the insulating member is provided to withdraw heat from the insulating member.
    Type: Grant
    Filed: June 20, 1997
    Date of Patent: July 6, 1999
    Assignee: Applied Materials, Inc.
    Inventors: David Richard Burgin, David Loome, Simon Povall
  • Patent number: 5917186
    Abstract: To provide a focused ion beam optical axis alignment method and a focused ion beam apparatus which make axis alignment work of for example when replacing an ion source of a focused ion beam apparatus easy.
    Type: Grant
    Filed: September 9, 1997
    Date of Patent: June 29, 1999
    Assignee: Seiko Instruments Inc.
    Inventors: Toshiaki Fujii, Yasuhiko Sugiyama
  • Patent number: 5914494
    Abstract: The present invention relates to the fabrication of materials and structures having selected mechanical, thermal and electrical properties. More particularly, the invention relates to the use of these materials and structures in ion implantation systems. Structures comprising boron material provide components for use in implanters including arc chambers with which a beam of ions is generated for implantation into a target such as a semiconductor wafer.
    Type: Grant
    Filed: January 5, 1998
    Date of Patent: June 22, 1999
    Assignee: ThermoCeramiX, LLC
    Inventor: Richard C. Abbott
  • Patent number: 5907158
    Abstract: Ion implanter having at least two independent ion generating systems coupled to a single scanning end station. In a preferred embodiment one of the ion generating systems generates ions approximately in the 3-80 keV range and the other system generates ions approximately in the 80-3,000 keV range. The scanning end station may be employ magnetic, electrostatic, or mechanical scanning. This invention has particular relevance for the controlled doping of semiconducting materials and flat panel displays units in which doping may be needed for the production of micro-electronic devices, the sub-circuit crystal damage that is useful for gettering unwanted impurity atoms and for the development of etch pits in flat panel displays. The disclosed apparatus makes possible a variety of chained implants at different energies using the same mask.
    Type: Grant
    Filed: May 14, 1997
    Date of Patent: May 25, 1999
    Assignee: Ebara Corporation
    Inventors: Mehran Nasser-Ghodsi, Andrew Wittkower, Hilton F. Glavish, Kenneth H. Purser, Gaylord C. Noblitt, III
  • Patent number: 5898178
    Abstract: An ion source is described for use with conventional and modified ion implantation equipment to improve safety and increase efficiency when generating radioactive ion beams. The ion source is particularly useful with radioactive species that are volatile at room temperature or react with air molecules to form volatile compounds. One or more components of the ion source, such as a cathode, an anode, an electrostatic electron reflector, a vaporizer, a sputter target, a gas line or a plasma chamber, may be mounted on extensible probes within radiation shielded sealable transfer containers. Other components of the ion source may be fixed in a vacuum chamber, which may have one or more valved openings corresponding to the sealable openings in the transfer containers. The components on the probes may be extended into position inside the vacuum chamber for operation of the ion source, and may be retracted into the sealable transfer containers and transported to an area for servicing or repair.
    Type: Grant
    Filed: July 2, 1997
    Date of Patent: April 27, 1999
    Assignee: Implant Sciences Corporation
    Inventor: Stephen N. Bunker
  • Patent number: 5895923
    Abstract: An ion implantation system is described having an ion source coupled to a process chamber, and a workpiece handling assembly having a workpiece support that is mounted within the process chamber. The system implants ions into a photoresist coated workpiece to change the conductivity of the workpiece. An ion beam shield is provided that is positioned between the ion source and the workpiece support during processing to prevent outgassed photoresist from coating portions of the ion source.
    Type: Grant
    Filed: November 26, 1996
    Date of Patent: April 20, 1999
    Assignee: Eaton Corporation
    Inventor: Julian G. Blake
  • Patent number: 5892232
    Abstract: An arc chamber including a reaction chamber, a filament element used to generate electrons, a first power supply means set for providing power to the filament element, a second power supply means utilized for creating a potential to increase the ionization efficiency, a plurality of gas injected openings set to inject suitable gas into the reaction chamber and be ionized in a gaseous plasma by impact from electrons, a first filament insulator, and three second filament insulators used for isolation. The first filament insulator includes a truncated corn portion and a ring portion. The truncated corn portion has a hole formed threrethrough itself. The ring portion is coaxially connected to the smaller surface of the truncated corn portion. The second filament insulator includes a truncated corn portion and two ring portions. Similarily, the truncated corn portion has a hole through formed therethrough. The ring portions are respectively coaxially connected to the two surfaces of the truncated corn portion.
    Type: Grant
    Filed: October 25, 1996
    Date of Patent: April 6, 1999
    Assignee: Mosel Vitelic Inc.
    Inventors: Pei-Wei Tsai, Tzu-Hsin Huang, Hua-Jen Tseng, Min-Huei Lin
  • Patent number: 5889404
    Abstract: In a discharge ionization detector, a method and apparatus are disclosed for increasing the transfer of photons and metastables from a discharge chamber to a ionization chamber, while effecting ion discrimination of the ionic current with respect to a signal cathode, thereby reducing the effect of ionic current in the signal output. Preferred embodiments of the invention include a discharge source located in a discharge chamber, means for introducing discharge gas flow into the discharge chamber, a flow guide that directs discharge gas flow between the discharge chamber and an adjacent ionization chamber, and inlet port for introducing a flow of sample gas containing an analyte into the ionization chamber and an outlet port for exhausting the sample gas and the discharge gas. A plurality of apertures in the flow guide are situated proximate the discharge source so as to promote the rapid and efficient transfer of photons and metastables from the discharge source into the ionization chamber.
    Type: Grant
    Filed: August 29, 1997
    Date of Patent: March 30, 1999
    Assignee: Hewlett-Packard Company
    Inventors: Mahmoud F. Abdel-Rahman, William H. Wilson
  • Patent number: 5889371
    Abstract: The improved ion source of the present invention includes upper and lower spaced apart but coaxially arranged magnetic pole rings having differing inner diameters. Because of the non-symmetry of the pole pieces or rings, the magnetic flux field created therebetween is non-symmetrical from top to bottom. This, and the arrangement and configuration of the anode ring located between the pole pieces, create an increased plasma region and higher plasma density resulting in increased thermal management, improved stoichiometry and increased density of the thin film devices being fabricated.
    Type: Grant
    Filed: May 9, 1997
    Date of Patent: March 30, 1999
    Assignee: Denton Vacuum Inc.
    Inventors: David Boyarsky, Frank T. Zimone
  • Patent number: 5886355
    Abstract: Ion implantation equipment is modified so as to provide filament reflectors to a filament inside of an arc chamber, and to remove the electrical insulators for the filament outside of the arc chamber and providing a means of shielding, thereby reducing the formation of a conductive layer on said insulators and greatly extending the lifetime and reducing downtime of the equipment. The efficiency of the equipment is further enhanced by means of an interchangeable liner for the arc chamber that increases the wall temperature of the arc chamber and thus the electron temperature. The use of tungsten parts inside the arc chamber, obtained either by making the arc chamber itself or portions thereof of tungsten, particularly the front plate having the exit aperture for the ion beam, or by inserting a removable tungsten liner therein, decreases contamination of the ion beam. Serviceability of the arc chamber is improved by means of a unitary clamp that separately grips both the filament and filament reflectors.
    Type: Grant
    Filed: August 20, 1996
    Date of Patent: March 23, 1999
    Assignee: Applied Materials, Inc.
    Inventors: Nicholas Bright, Paul Anthony Burfield, John Pontefract, Bernard Francis Harrison, Peter Meares, David R. Burgin, Andrew Stephen Devaney, Peter Torin Kindersley
  • Patent number: 5883393
    Abstract: A plurality of removable shields are disclosed for use with ion source in ion implanters. Specifically, the shields fit over the extraction electrode assembly, the sides of the interior walls and the cold-plate inside an ion source chamber. The shields are easily mountable and dismountable by the maintenance personnel. It is shown that shields can very effectively protect the insides of ion source from contamination by toxic materials emanating from the ionization source. A method is also disclosed for cleaning the shields outside the ion source by means of bead blasting followed by washing by deionized water and rinse with isopropyl alcohol. It is shown that the turn-around-time for preventive maintenance of an ion source in an ion implanter can be shortened by a factor of four.
    Type: Grant
    Filed: April 6, 1998
    Date of Patent: March 16, 1999
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Fu-Kang Tien, H. J. Chang
  • Patent number: 5874314
    Abstract: In a technique for detecting organic vapors and aerosols, e.g. of amines, hydrazines and nitrogen-containing compounds produced in combustion, molecules condense at a surface of a conductive device. By heating the conductive device in pulsed fashion, e.g. by resistance heating, condensed molecules are thermally ionized and emitted from the conductive device. Emitted ions are collected by a collector electrode, and the resulting ionic current pulse is amplified by a transimpedance circuit. The heat pulse lasts until the ionic current pulse has subsided, by which time the conductive device has become free of residual substances. As a result, the conductive device remains uncontaminated and has a long service life. The time-averaged power consumption of the technique is less than 2 mW. For resistance heating, a meander heater element can be disposed on a silicon nitride membrane across an etched opening in a silicon chip.
    Type: Grant
    Filed: January 31, 1997
    Date of Patent: February 23, 1999
    Assignee: Cerberus AG
    Inventors: Markus Loepfe, Dieter Wieser, Peter Ryser
  • Patent number: 5869832
    Abstract: A device and method for forming ions by inductive ionization is disclosed. The device is an ion source that includes a capacitor having a pair of electrodes separated by a dielectric material. The method of the invention uses the capacitor-based ion source to form positive and negative ions including multiply-charged ions.
    Type: Grant
    Filed: October 14, 1997
    Date of Patent: February 9, 1999
    Assignee: University of Washington
    Inventors: Houle Wang, Murray Hackett
  • Patent number: 5866909
    Abstract: A mass-analysed ion beam generator in which the ion beam is in the form of a thin flat ribbon with its major transverse dimension aligned parallel with the direction of the mass-analysing magnetic field.
    Type: Grant
    Filed: August 7, 1997
    Date of Patent: February 2, 1999
    Assignee: AEA Technology plc
    Inventor: James Harry Freeman