Abstract: An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. A respective wafer lift structure on each carrier is moveable between first and second positions, with the wafer supported spaced away from the heat sink and in thermal contact with the heat sink respectively. The lift structure is operated to move between the first and second positions wheel the implant is rotating. This allows control of wafer temperature during the implant process by adjusting the thermal contact between wafers and heat sinks.

Abstract: A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

Abstract: A sub-micron scale property testing apparatus including a test subject holder and heating assembly. The assembly includes a holder base configured to couple with a sub-micron mechanical testing instrument and electro-mechanical transducer assembly. The assembly further includes a test subject stage coupled with the holder base. The test subject stage is thermally isolated from the holder base. The test subject stage includes a stage subject surface configured to receive a test subject, and a stage plate bracing the stage subject surface. The stage plate is under the stage subject surface. The test subject stage further includes a heating element adjacent to the stage subject surface, the heating element is configured to generate heat at the stage subject surface.

Abstract: Provided are a large-current and highly stable gas field ionization ion source, and a high-resolution ion microscope with a large focal depth. The present invention relates to an ion microscope provided with a gas field ionization ion source, in which disposed are a refrigerator for cooling the gas field ionization ion source independent of the main body of the ion microscope, and a refrigerant circulation circuit cooling mechanism for circulating a refrigerant between the gas field ionization ion source and the refrigerator. Consequently it is possible to reduce the mechanical vibration of the refrigerator, which propagates to the gas field ionization ion source, and to achieve both the improvement of the brightness of the ion source and the improvement of ion beam focusing performance.

Abstract: A method and a device for preparing specimens for a cryo-electron microscope are described. A carrier is fixed to a holder, sample liquid is applied to the carrier, and a blotting device for removing excess sample liquid from the carrier by means of the absorbing medium is applied. The absorbing medium is illuminated with light and a change in the optical properties of the absorbing medium is detected by means of an optical sensor device. A control moves the blotting away from the carrier depending on a change in the detected optical properties.

Abstract: Techniques for changing temperature of a platen are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for changing temperature of a platen comprising a platen and one or more movable thermal pads comprising one or more thermal fluid channels to carry a thermal fluid configured to affect a temperature of the platen.

Abstract: A sample measuring method and a charged particle beam apparatus are provided which remove contaminants, that have adhered to a sample in a sample chamber of an electron microscope, to eliminate adverse effects on the subsequent manufacturing processes. To achieve this objective, after the sample measurement or inspection is made by using a charged particle beam, contaminants on the sample are removed before the next semiconductor manufacturing process. This allows the contaminants adhering to the sample in the sample chamber to be removed and therefore failures or defects that may occur in a semiconductor fabrication process following the measurement and inspection can be minimized.

Abstract: A shift of mass axis that occurs when the temperature of a vacuum container consisting of a vacuum chamber (15) and IT block (16) or that of a TOF power unit (20) for applying an ion acceleration voltage is changed, is respectively measured beforehand, and parameters expressing a transfer function based on its response are stored in a transfer function memory (24). During an analysis, a mass shift predicting operation section (25) estimates the current shift length of the mass axis from the current temperatures of the IT block (16) and TOF power unit (20) obtained by first and second temperature sensors (34 and 35) as well as from the two transfer functions stored in the memory (24). A mass shift correcting section (29) corrects the mass axis of the mass spectrum according to the estimated shift length.

Abstract: A semiconductor device fabrication apparatus includes a load lock chamber, a loading assembly in the load lock chamber, and an ion implantation target chamber that is hermetically connected to the load lock chamber. The load lock chamber is configured to store a plurality of wafer plates. Each wafer plate respectively includes at least one semiconductor wafer thereon. The ion implantation target chamber is configured to implant an ion species into a semiconductor wafer on a currently loaded wafer plate. The loading assembly is also configured to load a next one of the plurality of wafer plates from the load lock chamber into the ion implantation target chamber. The loading assembly may be configured to load the next wafer plate from the load lock chamber into the ion implantation target chamber while substantially maintaining a current temperature within the ion implantation target chamber and/or without depressurizing the ion implantation target chamber. Related methods and devices are also discussed.

Abstract: A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

Abstract: A method for ion implantation is disclosed which includes modulating the temperature of the substrate during the implant process. This modulation affects the properties of the substrate, and can be used to minimize EOR defects, selectively segregate and diffuse out secondary dopants, maximize or minimize the amorphous region, and vary other semiconductor parameters. In one particular embodiment, a combination of temperature modulated ion implants are used. Ion implantation at higher temperatures is used in sequence with regular baseline processing and with ion implantation at cold temperatures. The temperature modulation could be at the beginning or at the end of the process to alleviate the detrimental secondary dopant effects.

Abstract: A sample measuring method and a charged particle beam apparatus are provided which remove contaminants, that have adhered to a sample in a sample chamber of an electron microscope, to eliminate adverse effects on the subsequent manufacturing processes. To achieve this objective, after the sample measurement or inspection is made by using a charged particle beam, contaminants on the sample are removed before the next semiconductor manufacturing process. This allows the contaminants adhering to the sample in the sample chamber to be removed and therefore failures or defects that may occur in a semiconductor fabrication process following the measurement and inspection can be minimized.

Abstract: The invention is directed to a temperature-controllable objective, particularly for microscopes and other optical equipment, which comprises a main barrel as the main component part of the objective. The main barrel contains at least one correction mount, cylinder sleeves, mounting rings, carrier rings and/or adjusting rings, and imaging optical elements. In order to control the temperature, at least one structural component part of the objective or an element arranged between structural component parts of the objective is constructed as a temperature-controllable element or as a temperature-controllable foil which is connected (not shown) by leads to a device for monitoring temperature. Further, a temperature gauge or temperature sensor is arranged in the objective and is likewise connected to the device for monitoring temperature.

Abstract: Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.

Abstract: An object of the present invention is to extract a micro foreign body of a few ?m, which may cause a product defect of a device or the like, and to subject the foreign body to a mass analysis at a favorable S/N ratio without any contamination. A micro sample heating probe includes a sample holder made up of two members different in diameter, a supporting part, and a terminal part. The sample holder includes a heating mechanism only in a limited part, and just a region extremely close to the micro sample being an analysis target is heated locally. Therefore, even when a contaminated substance is attached to the probe, such substance is not heated, thereby preventing a noise from occurring, and enabling an analysis at a quite favorable S/N ratio.

Abstract: A transmission electron microscope (TEM) micro-grid includes a grid, a carbon nanotube film structure and two electrodes electrically connected to the carbon nanotube film structure.

Abstract: The present invention achieves a heating stage for a micro-sample, capable of efficient heating and accurate observation of the micro-sample. A micro-sample mount is a heating portion in coil form and is fixed at both ends to a base for the heating stage for the micro-sample. The base can be divided into two members at a base cut line, and the mount is fixed at one end to the first member and is fixed at the other end to the second member. A sample subjected to micro-sampling is mounted on the mount. The base is removed from the tip of a holder, and is mounted on a stage for the sample stage. A current is fed to the micro-sample mount through the members to thereby apply heat to a micro-sample for observation.

Abstract: Left and right sides of the mesh sandwiching the placing region therebetween are set as left and right to-be-fixed portions to be fixed to sample holder separation portions respectively to be moved in a stretch direction. A slit for dividing use is formed from a portion of the periphery of the mesh disposed between the left and right to-be-fixed portions thereof toward the rubber slice-placing position of the mesh in a direction orthogonal to the stretch direction of the rubber slice or a direction inclined thereto. When the to-be-fixed portions are moved in a separation direction by moving the sample holder separation portions, the mesh is divided into left and right parts by the slit for dividing use so that the rubber slice fixed to the left and right sides of the mesh is stretched.

Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen having a wafer interface to provide a predetermined thermal contact between the wafer and the platen. The apparatus may also comprise an array of heating elements to heat the wafer while the wafer is held on the platen to achieve a predetermined temperature profile on the wafer during ion implantation, the heating elements being external to the platen. The apparatus may further comprise a post-implant cooling station to cool down the wafer after ion implantation of the wafer.

Abstract: The present invention relates to a cryo-charging specimen holder for the electron microscope, particularly to a cryo-charging specimen holder for the electron microscope to hold various biological materials. The major feature of the invention is to charge the biological specimen and freeze the specimen at low temperature. The ice around the biological sample is also doped, so that after charging the doped ice surrounding the sample has a conductivity level comparable to that of conductor. Therefore, the sample can be embedded by the doped and charged ice obtaining the property of conductor, in order to be observed by the electron microscope.

Abstract: An object of the present invention is to provide a specimen stage which is simple in structure, and which suppresses a positional shift due to a friction heat caused by a brake or the like. One aspect to achieve the object provides a specimen stage including: a thrust portion thrust by a thrusting member; and a slide surface thrust by the thrust portion. When the specimen stage stops, the specimen stage performs a control in a way that a part of the slide surface in contact with the thrust portion, and/or a portion adjacent to the part or the thrust portion is heated. By heating the part of the slide surface or the like in this manner, a temperature gradient can be suppressed as described above (see FIG. 3).

Abstract: A semiconductor device fabrication apparatus includes a load lock chamber, a loading assembly in the load lock chamber, and an ion implantation target chamber that is hermetically connected to the load lock chamber. The load lock chamber is configured to store a plurality of wafer plates. Each wafer plate respectively includes at least one semiconductor wafer thereon. The ion implantation target chamber is configured to implant an ion species into a semiconductor wafer on a currently loaded wafer plate. The loading assembly is also configured to load a next one of the plurality of wafer plates from the load lock chamber into the ion implantation target chamber. The loading assembly may be configured to load the next wafer plate from the load lock chamber into the ion implantation target chamber while substantially maintaining a current temperature within the ion implantation target chamber and/or without depressurizing the ion implantation target chamber. Related methods and devices are also discussed.

Abstract: A sample processing apparatus includes a stage for supporting a sample, a first temperature controller for controlling a temperature of the sample, an ion beam generator for irradiating the sample with an ion beam, and a detector for detecting a signal emitted from the sample in response to the irradiation of the ion beam. Also provided is a probe for obtaining a part of the sample processed by the irradiation of the ion beam and conveying it to a sample table, a second temperature controller for controlling a temperature of the probe, and a third temperature controller for controlling a temperature of the sample table.

Abstract: A charged particle beam examination equipment for examining and measuring a semiconductor wafer, comprising a wafer exchange portion for exchanging an unexamined wafer and an examiner wafer with each other, which has a first arm longitudinally sliding for reciprocation, a first wafer gripping part provided to the distal end of the first arm, for gripping/releasing the wafer, a second arm longitudinally sliding for reciprocation, and a second wafer gripping part provided to the distal end of the second arm, for gripping/releasing the wafer. The apparatus may shorten the time required for exchange of the wafers so as to enhance the throughput during examination and measurement of the wafers.

Abstract: Techniques for low-temperature ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a wafer support mechanism to hold a wafer during ion implantation and to facilitate movement of the wafer in at least one dimension. The apparatus may also comprise a cooling mechanism coupled to the wafer support mechanism. The cooling mechanism may comprise a refrigeration unit, a closed loop of rigid pipes to circulate at least one coolant from the refrigeration unit to the wafer support mechanism, and one or more rotary bearings to couple the rigid pipes to accommodate the movement of the wafer in the at least one dimension.

Abstract: A processing apparatus uses a focused charged particle beam to process a micro sample that is supported on a micro mount part. The micro mount part is supported on a micro sample stage and locally cooled by a cooling unit. The micro mount part is thermally independent of the micro sample stage and, due to its small size, can be cooled rapidly by the cooling unit.

Abstract: This apparatus for manufacturing semiconductor substrates has support disks and holding units holding semiconductor substrates on the support disks. The holding unit has a stopper which is formed of a conductive material and holds the brim of the semiconductor substrate, a stopper holder which supports the stopper at the outer circumferential portion thereof, a retaining member which retains the stopper to the support disk, and a heating unit which heats the stopper.

Abstract: The present invention achieves a heating stage for a micro-sample, capable of efficient heating and accurate observation of the micro-sample. A micro-sample mount is a heating portion in coil form and is fixed at both ends to a base for the heating stage for the micro-sample. The base can be divided into two members at a base cut line, and the mount is fixed at one end to the first member and is fixed at the other end to the second member. A sample subjected to micro-sampling is mounted on the mount. The base is removed from the tip of a holder, and is mounted on a stage for the sample stage. A current is fed to the micro-sample mount through the members to thereby apply heat to a micro-sample for observation.

Abstract: An electron beam heating device with the temperature up to 2200 K is provided for heating a sample and a tip for a scanning tunneling microscope (STM). The electron beam heating device includes a base stage for mating respectively with an electron beam sample heating carrier and an electron beam tip heating carrier, both carriers include a filament. The integration of the filament into the transferable electron beam sample heating carrier and electron beam tip heating carrier enables filament exchange without venting the vacuum system. A fixed distance between the sample and the filament enables reproducible sample temperature control and the filament is mounted at a back of the sample, allowing optical access for temperature measurement, and allowing sample preparation processes without changing positions of the sample or the filament. Once the tip is loaded, a fixed relative position between the tip and the filament enables reproducible control of heating.

Abstract: The invention relates to a thermal switch for particle-optical apparatus. In, for example, a cryo-TEM (transmission electron microscope), a sample 34 that is placed at an extremity 20 of a sample holder 7 can be maintained at, for example, the temperature of liquid nitrogen. There is a need to be able to inspect a sample at, for example, room temperature in a simple manner, without heating the microscope as a whole from the cryogenic temperature to room temperature. By using the thermal switch 40, this becomes possible. To this end, the thermal switch changes the thermal path between a cold source 22 in the apparatus and the extremity 20 of the sample holder 7, whereby, in one position, position 46a, a connection is made from the extremity 20 to the cold source 22, and, in the other position, position 46b, a connection is made to a portion 44 of the apparatus that is maintained at room temperature.

Abstract: A cryogenic variable temperature scanning tunneling microscope of novel design and component configuration, for use in conjunction with a variety of low temperature methodologies.

Abstract: The present invention provides an inspection apparatus capable of suppressing leak electric current to a specimen and a probe, and thus capable of measuring highly sensitive electrical characteristics, when the specimen is heated by a heater. A specimen heating unit that heats a specimen is configured of: a heater; a grounded metallic shield, which coats the heater as electrically insulated; and an insulation sheet disposed on a side of the metallic shield facing the mounted specimen. Likewise, a probe heating unit is configured of: a heater; a grounded metallic shield, which coats the heater as electrically insulated; and an insulation sheet.

Abstract: One or more aspects of the present invention pertain to stabilizing the current or density of an ion beam within an ion implantation system by selectively adjusting a lone parameter of feed gas flow. Adjusting the gas flow does not necessitate adjustments to other operating parameters and thereby simplifies the stabilization process. This allows the beam current to be stabilized relatively quickly so that ion implantation can begin promptly and continue uninterrupted. This improves throughput while reducing associated implantation costs.

Abstract: Integrated inspection and test systems for liquid crystal display (LCD) active plates. The integrated inspection and test systems may combine visual imaging inspection and an electronic sensing such as voltage imaging, electron beam sensing or charge sensing, in which the potential defect information obtained by the visual inspection system is combined with the potential defect information obtained by the electronic sensing system to produce a defect report. One or more high-resolution visual cameras are scanned over a stationary plate, and the image data from the camera(s) is processed to detect potential defects. A high-resolution electronic sensing system examines the stationary plate, and the image data from the sensor(s) is processed to detect potential defects. The potential defects from the visual image data and electronic sensing image data are processed to produce the final defect information.

Abstract: Various systems configured to reduce distortion of a resist during a metrology process are provided. The systems include an electron beam metrology tool configured to measure one or more characteristics of one or more resist features formed on a specimen. The electron beam metrology tool may be configured as a scanning electron microscope. The resist may be designed for exposure at a wavelength of about 193 nm. One system includes a cooling subsystem configured to alter a temperature of the specimen during measurements by the tool such that the resist feature(s) are not substantially distorted during the measurements. Another system includes a drying subsystem that is configured to reduce moisture proximate the specimen during measurements by the electron beam metrology tool such that the resist feature(s) are not substantially distorted during the measurements. An additional system may include both the cooling subsystem and the drying subsystem.

Abstract: To achieve high-resolution lithography, the temperature of a sample is controlled with heater wires during electron-beam lithography, the adverse effect of a magnetic field induced by the heater current is suppressed. Namely, heater wires are used to control the temperature of a sample so that the temperature will be maintained constant. In order to minimize the adverse effect of a magnetic field during the passage of currents through the heater wires, two heater wires are layered with the arrangement of the upper and lower sides, currents are fed to flow through the heater wires in mutually opposite directions, and the ratio of the current flowing through the upper heater wire to the one flowing through the lower heater wire is slightly changed from zero.

Abstract: A sample measuring method and a charged particle beam apparatus are provided which remove contaminants, that have adhered to a sample in a sample chamber of an electron microscope, to eliminate adverse effects on the subsequent manufacturing processes. To achieve this objective, after the sample measurement or inspection is made by using a charged particle beam, contaminants on the sample are removed before the next semiconductor manufacturing process. This allows the contaminants adhering to the sample in the sample chamber to be removed and therefore failures or defects that may occur in a semiconductor fabrication process following the measurement and inspection can be minimized.

Abstract: A specimen holder for an electron microscope, comprising a rod-shaped part, which is provided near one end with a tip, which tip is arranged to receive a specimen, the rod-shaped part, in use, extending with at least the tip into the electron microscope, held by clamping means present in the electron microscope, wherein first temperature control means are provided to control the temperature of the rod-shaped part and/or the clamping means, such that this rod-shaped pan and the clamping means substantially have the same temperature, at least at the location of their contact surfaces.

Abstract: A specimen temperature adjusting apparatus includes a specimen stage that the observation specimen is to be placed on and a temperature adjustment element that is attached to the specimen stage. The specimen stage has a groove surrounding a portion where the observation specimen is to be placed. The temperature adjustment element is located in the groove of the specimen stage.

Abstract: A sample inspection apparatus comprises a sample support; a detection system for detecting radiation emitted by or transmitted through a sample on the sample support in response to radiation incident on the sample; and a cooling system for cooling at least one of the sample support and detection system. The cooling system includes at least one oscillating, mechanical component which oscillates at a frequency different from the at least one of the support and detection system.

Abstract: Systems and methods eliminate vibrations produced by coolant fluid flowing through a short stroke stage and prevent change in thermally-induced distortion of the short stroke stage by maintaining the temperature and temperature distribution within the short stroke stage constant regardless of actinic heat load incident on a reticle. This is done by: (1) conducting heat through the reticle and short stroke stage components, (2) radiatively transferring heat from the short stroke stage to a long stroke stage, and (3) using convection and a cooling system to dissipate heat from the long stroke stage. The short stroke stage can be magnetically levitated from the long stroke stage. This way there is no physical contact, but the long stroke stage's movements can still control the short stroke stage's movements. By not physically contacting the long stroke stage, the short stroke stage is not affected by vibrations in the long stroke stage caused by the flowing coolant.

Abstract: One embodiment disclosed relates to an integrated electron beam inspection and contaminant removal tool. An electron beam column is configured to image an area on a substrate being inspected. A contaminant removal subsystem is integrated with the electron beam column and configured to remove contamination from a surface of the substrate. Means is advantageously included by which the substrate is kept from being exposed to air between the contaminant removal subsystem and the electron beam column.

Abstract: A method and apparatus for testing a material such as the water-wall tubes in boilers includes the use of a portable thermal line heater having radiation shields to control the amount of thermal radiation that reaches a thermal imager. A procedure corrects for variations in the initial temperature of the material being inspected. A method of calibrating the testing device to determine an equation relating thickness of the material to temperatures created by the thermal line heater uses empirical data derived from tests performed on test specimens for each material type, geometry, density, specific heat, speed at which the line heater is moved across the material and heat intensity.

Abstract: The invention provides a liquid injection system (12) for an environmental scanning electron microscope. The liquid injection system comprises a liquid firing device (18) for firing a liquid and a heat transfer system (17, 22, 24). The heat transfer system functions to maintain the liquid below its boiling point at an operating pressure within the specimen chamber of the environmental scanning electron microscope. The invention also provides an environmental scanning electron microscope incorporating a liquid injection system according to the present invention. The invention provides a simple and robust system for enabling investigation of the liquid injection system within an environmental or variable pressure scanning electron microscope.

Abstract: Disclosed is an electron beam apparatus and method which can retain the state that minimizes the amount of water content contained at a gap between a high-voltage cable and a high-voltage introduction insulator to thereby prevent creation of high-voltage discharge and current leakage. The apparatus comprises a means for applying a high voltage to an acceleration electrode while eliminating electron release from an electron source and for detecting a change in an emission current corresponding to a change in an acceleration voltage at this time. In addition, the apparatus comprises a means for issuing a cautionary notice or warning when the change of this emission current exceeds a prespecified value. Further, the apparatus comprises a means for letting a dry gas flow in a gap portion between the electron gun's high-voltage cable and the high-voltage introduction insulator to thereby dehumidify said gap portion.

Abstract: The invention is directed to a manipulator for an optical apparatus including a particle-optical apparatus. The manipulator is especially a diaphragm or specimen manipulator in an electron microscope. The component (4), which is to manipulated, is accommodated by a transfer body (2) movable relative to a spatially-fixed component (1) and the transfer body (2) includes a composite material having a high thermal conductivity while simultaneously having a vanishing or negative thermal expansion coefficient in the direction of the connecting axis (B—B) between the component (4) and the spatially-fixed component (1).

Abstract: In relatively thick samples for electron microscopy imaging, details of interest are often located in the bulk of the sample, so that they cannot be directly imaged in the form of a SEM image. According to the invention, so as to expose the cross-section containing the details of interest, the frozen sample is subjected to ion milling, in such a manner that the desired cross-section is exposed. Thereafter, the exposed cross-section is further eroded in a controlled manner via sublimation, whereby the detail of interest is approached in a very accurate manner, and its fine details become visible. Hereafter, the finally desired SEM image can be made. By repetition of this process, a large number of successive cross-sections can be imaged, so that a spatial representation of the sample is obtained.

Abstract: The present invention relates generally to methods, apparatus and materials to reduce or minimize the heating of a substrate (and associated distortions of the photomask) caused by electron-beam energy deposited in the substrate during patterning. Heating of the substrate is exacerbated by radiative transfer of infrared energy from the substrate to other nearby components of the e-beam apparatus followed by reflection or re-radiation of a portion of the energy back to the substrate. The present invention provides useful materials and methods for reducing such reflection or re-radiation effects, leading to temperature stability of the substrate, reduced thermal distortion and the possibility of increased patterning accuracy.

Abstract: The invention is directed to a manipulator for an optical apparatus including a particle-optical apparatus. The manipulator is especially a diaphragm or specimen manipulator in an electron microscope. The component (4), which is to manipulated, is accommodated by a transfer body (2) movable relative to a spatially-fixed component (1) and the transfer body (2) includes a composite material having a high thermal conductivity while simultaneously having a vanishing or negative thermal expansion coefficient in the direction of the connecting axis (B-B) between the component (4) and the spatially-fixed component (1).

Abstract: The invention provides a wafer pad assembly for use in an ion implanter for mounting and cooling a wafer. The wafer pad assembly comprises a wafer support pad having an upper surface for mounting the wafer and a lower surface. The lower surface of the wafer support pad is connected to a coolant passage having an inlet section and an outlet section arranged in an opposed configuration, wherein said inlet section is counterbalanced by said outlet section. The lower surface is connected to a frame having an outer curved surface in mating engagement with a complementary shaped bearing surface of a housing wherein said wafer can be tilted or rotated about an axis.