Ion Bombardment Patents (Class 250/492.21)
  • Patent number: 11315791
    Abstract: A method and system for fluorine ion implantation is described, where a fluorine compound capable of forming multiple fluorine ionic species is introduced into an ion implanter at a predetermined flow rate. Fluorine ionic species are generated at a predetermined arc power and source magnetic field, providing an optimized beam current for the desired fluorine ionic specie. The desired fluorine ionic specie, such as one having multiple fluorine atoms, is implanted into the substrate under the selected operating conditions.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: April 26, 2022
    Assignee: ENTEGRIS, INC.
    Inventors: Ying Tang, Sharad N. Yedave
  • Patent number: 11295931
    Abstract: An ion implantation system, including an ion source, and a buncher to receive a continuous ion beam from the ion source, and output a bunched ion beam. The buncher may include a drift tube assembly, having an alternating sequence of grounded drift tubes and AC drift tubes. The drift tube assembly may include a first grounded drift tube, arranged to accept a continuous ion beam, at least two AC drift tubes downstream to the first grounded drift tube, a second grounded drift tube, downstream to the at least two AC drift tubes. The ion implantation system may include an AC voltage assembly, coupled to the at least two AC drift tubes, and comprising at least two AC voltage sources, separately coupled to the at least two AC drift tubes. The ion implantation system may include a linear accelerator, comprising a plurality of acceleration stages, disposed downstream of the buncher.
    Type: Grant
    Filed: July 14, 2020
    Date of Patent: April 5, 2022
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventor: Frank Sinclair
  • Patent number: 11264203
    Abstract: A method, a non-transitory computer readable medium and a system for reducing a temperature difference between a sample and a chuck of an electron beam tool. The method may include determining a target temperature of samples located at the load port of the electron beam tool; setting a temperature of the samples, located at the load port, to the target temperature; moving the sample from the load port to the chuck, the chuck is located within a vacuum chamber, the sample belongs to the samples; and positioning the sample on the chuck, wherein when positioned on the chuck, a temperature of the sample substantially equals a temperature of the chuck.
    Type: Grant
    Filed: August 17, 2020
    Date of Patent: March 1, 2022
    Assignee: Applied Materials Israel Ltd.
    Inventors: Genadi Gabi Brontvein, Avraham Aboody
  • Patent number: 11244841
    Abstract: Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: February 8, 2022
    Assignee: ELEMENTAL SCIENTIFIC, INC.
    Inventors: Tyler Yost, Daniel R. Wiederin, Beau Marth, Jared Kaser, Jonathan Hein, Jae Seok Lee, Jae Min Kim, Stephen H. Sudyka
  • Patent number: 11232925
    Abstract: An IHC ion source that employs a negatively biased cathode and one or more side electrodes is disclosed. The one or more side electrodes are left electrically unconnected in certain embodiments and are grounded in other embodiments. The floating side electrodes may be beneficial in the formation of certain species. In certain embodiments, a relay is used to allow the side electrodes to be easily switched between these two modes. By changing the configuration of the side electrodes, beam current can be optimized for different species. For example, certain species, such as arsenic, may be optimized when the side electrodes are at the same voltage as the chamber. Other species, such as boron, may be optimized when the side electrodes are left floating relative to the chamber. In certain embodiments, a controller is in communication with the relay so as to control which mode is used, based on the desired feed gas.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: January 25, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Shengwu Chang, Frank Sinclair, Michael St. Peter
  • Patent number: 11217427
    Abstract: An apparatus may include a scanner, arranged to receive an ion beam, and arranged to deliver a scan signal, defined by a scan period, to scan the ion beam between a first beamline side and a second beamline side. The apparatus may include a corrector module, disposed downstream of the scanner, and defining a variable path length for the ion beam, between the first beamline side and the second beamline side, wherein a difference in propagation time between a first ion path along the first beamline side and a second ion path along the second beamline side is equal to the scan period.
    Type: Grant
    Filed: November 27, 2020
    Date of Patent: January 4, 2022
    Assignee: Applied Materials, Inc.
    Inventor: Anthony Renau
  • Patent number: 11195720
    Abstract: The present disclosure describes a system and a method for a ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.
    Type: Grant
    Filed: April 11, 2019
    Date of Patent: December 7, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Jung Huang, Li-Hsin Chu, Po-Feng Tsai, Henry Peng, Kuang Huan Hsu, Tsung Wei Chen, Yung-Lin Hsu
  • Patent number: 11189462
    Abstract: A method of plasma processing includes generating plasma in a plasma processing chamber containing a first species, a second species, and a substrate. The plasma includes a plasma sheath, first species ions, and second species ions. The first species has a first mass and the second species has a second mass that is less than the first mass. The method further includes applying a pulse train of negative bias pulses to the substrate. Each of the negative bias pulses has a pulse duration less than 10 ?s and spatially stratifies the first species ions and the second species ions in the plasma sheath. No bias voltage is applied to the substrate during a pulse delay after each negative bias pulse. The pulse delay is at least five times the pulse duration.
    Type: Grant
    Filed: July 21, 2020
    Date of Patent: November 30, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Sergey Voronin
  • Patent number: 11183358
    Abstract: The invention relates to an implantation device, an implantation system and a method. The implantation device includes a filter frame and a filter held by the filter frame, and a collimator structure. The filter is designed to be irradiated by an ion beam passing through the filter. The collimator structure is arranged on the filter, in the transmitted beam downstream of the filter, or on the target substrate.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: November 23, 2021
    Assignee: MI2-FACTORY GMBH
    Inventors: Florian Krippendorf, Constantin Csato
  • Patent number: 11170973
    Abstract: An ion source with a target holder for holding a solid dopant material is disclosed. The ion source comprises a thermocouple disposed proximate the target holder to monitor the temperature of the solid dopant material. In certain embodiments, a controller uses this temperature information to vary one or more parameters of the ion source, such as arc voltage, cathode bias voltage, extracted beam current, or the position of the target holder within the arc chamber. Various embodiments showing the connections between the controller and the thermocouple are shown. Further, embodiments showing various placement of the thermocouple on the target holder are also presented.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: November 9, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Shreyansh P. Patel, Graham Wright, Daniel Alvarado, Daniel R. Tieger, Brian S. Gori, William R. Bogiages, Jr., Benjamin Oswald, Craig R. Chaney
  • Patent number: 11069511
    Abstract: A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.
    Type: Grant
    Filed: June 22, 2018
    Date of Patent: July 20, 2021
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Christopher Hatem, Peter F. Kurunczi, Christopher A. Rowland, Joseph C. Olson, Anthony Renau
  • Patent number: 11062880
    Abstract: An ion implanter includes: a main body which includes a plurality of units which are disposed along a beamline along which an ion beam is transported, and a substrate transferring/processing unit which is disposed farthest downstream of the beamline, and has a neutron ray source in which a neutron ray is generated due to collision of a ultrahigh energy ion beam; an enclosure which at least partially encloses the main body; and a neutron ray scattering member which is disposed at a position where a neutron ray which is emitted from the neutron ray source is incident in a direction in which a distance from the neutron ray source to the enclosure is equal to or less than a predetermined value.
    Type: Grant
    Filed: March 17, 2020
    Date of Patent: July 13, 2021
    Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
    Inventors: Hiroshi Matsushita, Ryota Ohnishi
  • Patent number: 11031247
    Abstract: In one embodiment, a processing apparatus may include a plasma chamber configured to generate a plasma; a process chamber adjacent the plasma chamber and configured to house a substrate that defines a substrate plane; an extraction system adjacent the plasma chamber and configured to direct an ion beam from the plasma to the substrate, the ion beam forming a non-zero angle with respect to a perpendicular to the substrate plane; and a molecular chamber adjacent the process chamber, isolated from the plasma chamber and configured to deliver a molecular beam to the substrate, wherein the ion beam and molecular beam are alternately delivered to the substrate to form a monolayer comprising species from the ion beam and molecular beam.
    Type: Grant
    Filed: February 20, 2018
    Date of Patent: June 8, 2021
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventor: Thomas R. Omstead
  • Patent number: 10923310
    Abstract: Process for treatment of a sapphire part with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where: the voltage for acceleration of the ions is between 10 kV and 100 kV; the implanted dose, expressed in ions/cm2, is between (5×1016)×(M/14)?1/2 and 1017×(M/14)?1/2, where M is the atomic mass of the ion; the rate of displacement VD, expressed in cm/s, is between 0.025×(P/D) and 0.1×(P/D), where P is the power of the beam, expressed in W (watts), and D is the diameter of the beam, expressed in cm (centimetres). A part made of sapphire having a high transmittance and which is resistant to scratching is thus advantageously obtained.
    Type: Grant
    Filed: February 12, 2018
    Date of Patent: February 16, 2021
    Assignee: IONICS FRANCE
    Inventors: Denis Busardo, Frédéric Guernalec
  • Patent number: 10920087
    Abstract: A hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition. The composition contains (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (UB), and (ii) hydrogen in an amount of from 2 to 6.99 vol. %, based on total volume of boron trifluoride and hydrogen in the composition. Also described are methods of use of such dopant source gas composition, and associated apparatus therefor.
    Type: Grant
    Filed: March 27, 2017
    Date of Patent: February 16, 2021
    Assignee: ENTEGRIS, INC.
    Inventors: Steven Bishop, Sharad N. Yedave, Oleg Bly, Joseph Sweeney, Ying Tang
  • Patent number: 10914800
    Abstract: Technologies relating to a magnetic resonance spectrometer are disclosed. The magnetic resonance spectrometer may include a doped nanostructured crystal. By nanostructuring the surface of the crystal, the sensor-sample contact area of the crystal can be increased. As a result of the increased sensor-sample contact area, the output fluorescence signal emitted from the crystal is also increased, with corresponding reductions in measurement acquisition time and requisite sample volumes.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: February 9, 2021
    Assignee: STC.UNM
    Inventors: Victor Acosta, Andrejs Jarmola, Lykourgos Bougas, Dmitry Budker
  • Patent number: 10886135
    Abstract: In a substrate processing method, electrons having a first energy are supplied from an electron beam generator into an inner space of a chamber body of a substrate processing apparatus to generate negative ions by attaching the electrons to molecules in a processing gas supplied to the inner space. Then a positive bias voltage is applied to an electrode of a supporting table that supports a substrate mounted on thereon in the inner space to attract the negative ions to the substrate.
    Type: Grant
    Filed: November 8, 2018
    Date of Patent: January 5, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shinji Kubota, Kazuya Nagaseki, Akihiro Yokota, Gen Tamamushi
  • Patent number: 10867773
    Abstract: An apparatus may include a first grounded drift tube, arranged to accept a continuous ion beam, at least two AC drift tubes, arranged in series, downstream to the first grounded drift tube, and a second grounded drift tube, downstream to the at least two AC drift tubes. The apparatus may include an AC voltage assembly, electrically coupled to at least two AC drift tubes. The AC voltage assembly may include a first AC voltage source, coupled to deliver a first AC voltage signal at a first frequency to a first AC drift tube of at least two AC drift tubes. The AC voltage assembly may further include a second AC voltage source, coupled to deliver a second AC voltage signal at a second frequency to a second AC drift tube of the at least two AC drift tubes, wherein the second frequency comprises an integral multiple of the first frequency.
    Type: Grant
    Filed: April 7, 2020
    Date of Patent: December 15, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventor: Frank Sinclair
  • Patent number: 10861669
    Abstract: An ion beam treatment or implantation system includes an ion source emitting a plurality of parallel ion beams having a given spacing. A first lens magnet having a non-uniform magnetic field receives the plurality of ion beams from the ion source and focuses the plurality of ion beams toward a common point. The system may optionally include a second lens magnet having a non-uniform magnetic field receiving the ion beams focused by the first lens magnet and redirecting the ion beams such that they have a parallel arrangement having a closer spacing than said given spacing in a direction toward a target substrate.
    Type: Grant
    Filed: October 28, 2019
    Date of Patent: December 8, 2020
    Inventor: Peter F. Vandermeulen
  • Patent number: 10854418
    Abstract: A mass analyzer includes a mass analyzing magnet that applies a magnetic field to ions extracted from an ion source to deflect the ions, a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies a magnetic field and/or an electric field to the ion beam to adjust the convergence or divergence of a ion beam. The mass analyzer changes a focal point of the ion beam in a predetermined adjustable range between an upstream side and a downstream side of the mass analyzing slit with the lens device to adjust mass resolution.
    Type: Grant
    Filed: November 21, 2018
    Date of Patent: December 1, 2020
    Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
    Inventor: Haruka Sasaki
  • Patent number: 10801978
    Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: October 13, 2020
    Assignee: NOVA MEASURING INSTRUMENTS, INC.
    Inventors: Charles Thomas Larson, Kavita Shah, Wei Ti Lee
  • Patent number: 10790117
    Abstract: An ion implantation apparatus includes a first angle measuring instrument configured to measure angle information on an ion beam in a first direction, a second angle measuring instrument configured to measure angle information on the ion beam in a second direction, a relative movement mechanism configured to change relative positions of the first angle measuring instrument and the second angle measuring instrument with respect to the ion beam in a predetermined relative movement direction, and a control device configured to calculate angle information on the ion beam in a third direction perpendicular to both a beam traveling direction and the relative movement direction based on the angle information on the ion beam in the first direction measured by the first angle measuring instrument and the angle information on the ion beam in the second direction measured by the second angle measuring instrument.
    Type: Grant
    Filed: March 25, 2019
    Date of Patent: September 29, 2020
    Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
    Inventor: Yoshiaki Inda
  • Patent number: 10790112
    Abstract: The focused ion beam apparatus includes: a vacuum container; an emitter tip disposed in the vacuum container and having a pointed front end; a gas field ion source; a focusing lens; a first deflector; a first aperture; an objective lens focusing the ion beam passing through the first deflector; and a sample stage. A signal generator responding to the ion beam in a point-shaped area is formed between the sample stage and an optical system including at least the focusing lens, the first aperture, the first deflector, and the objective lens, and a scanning field ion microscope image of the emitter tip is produced by matching a signal output from the signal generator and scanning of the ion beam by the first deflector with each other.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: September 29, 2020
    Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
    Inventor: Yoshimi Kawanami
  • Patent number: 10741686
    Abstract: A method for manufacturing a semiconductor device according to an embodiment includes implanting impurity ions into a SiC layer in a direction of <10-11>±1 degrees, <10-1-1>±1 degrees, <10-12>±1 degrees, or <10-1-2>±1 degrees.
    Type: Grant
    Filed: March 15, 2016
    Date of Patent: August 11, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Kono, Tomohiro Nitta
  • Patent number: 10702716
    Abstract: Presented systems and methods facilitate efficient and effective monitoring of particle beams. In some embodiments, a system comprises a primary particle beam generator that generates a primary particle beam, and a monitoring component that monitors the primary particle beam. The monitoring component comprises: a reaction component that is impacted by the primary particle beam, wherein results of an impact include creation of secondary photons; a detection component that detects a characteristic of the secondary photons; and a primary particle beam characteristic determination component that determines a characteristic of the primary particle beam based upon the characteristic of the secondary photons. The characteristic of the primary particle beam can include a radiation dose measurement and dose rate. The reaction component can include a foil component. A resolution time of less than a nano second can be associated with detecting the secondary photon characteristic.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: July 7, 2020
    Assignee: Varian Medical Systems Particle Therapy GMBH
    Inventor: Juergen Heese
  • Patent number: 10658156
    Abstract: A system and method for generating a plurality of scan profiles based on a desired implant pattern and the uniformity of the spot beam is disclosed. The system scans the spot beam and records the number of ions as a function of position. This is referred to as the linear uniformity array. The desired implant pattern and the linear uniformity array are then combined to generate a composite pattern array. This array contemplates the non-uniformity of the scanned beam and allows the system to create scan profiles that compensate for this. The software may be executed on the controller disposed in the implantation system, or may be executed on a different computing device.
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: May 19, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Stanislav S. Todorov, Jeffrey Morse, John Sawyer
  • Patent number: 10651011
    Abstract: An apparatus may include a first grounded drift tube, arranged to accept a continuous ion beam, at least two AC drift tubes, arranged in series, downstream to the first grounded drift tube, and a second grounded drift tube, downstream to the at least two AC drift tubes. The apparatus may include an AC voltage assembly, electrically coupled to at least two AC drift tubes. The AC voltage assembly may include a first AC voltage source, coupled to deliver a first AC voltage signal at a first frequency to a first AC drift tube of at least two AC drift tubes. The AC voltage assembly may further include a second AC voltage source, coupled to deliver a second AC voltage signal at a second frequency to a second AC drift tube of the at least two AC drift tubes, wherein the second frequency comprises an integral multiple of the first frequency.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: May 12, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventor: Frank Sinclair
  • Patent number: 10643761
    Abstract: Disclosed is a method for evaluating an irradiation angle of a beam, including a step of sampling the irradiation angle of the beam, wherein the irradiation angle of the beam is defined as being the direction of the vector of the irradiation point of the beam to the pre-set point of the tumor; and a step of calculating the track of the beam passing through the organs, wherein it is determined whether the tumor is fully covered within the effective treatment depth, and if so, entering the steps of calculating the evaluation coefficient, recording the irradiation conditions and calculating the results, and returning to the step of sampling the irradiation angle of the beam; and if not, entering the step of giving the worst evaluation coefficient and returning to the step of sampling the irradiation angle of the beam.
    Type: Grant
    Filed: May 29, 2018
    Date of Patent: May 5, 2020
    Assignee: NEUBORON MEDTECH LTD.
    Inventors: Yuan-Hao Liu, Wei-Lin Chen
  • Patent number: 10597773
    Abstract: A novel method, composition and system for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: March 24, 2020
    Assignee: Praxair Technology, Inc.
    Inventors: Aaron Reinicker, Ashwini K Sinha, Douglas C Heiderman
  • Patent number: 10573501
    Abstract: Techniques for performing data acquisition and analysis are described. A multi-mode acquisition strategy may be performed which iteratively selects mass isolation windows of different sizes in different scan cycles to acquire experimental data. The mass isolation windows selected may provide for acquiring elevated energy scan data for a defined set of m/z values. Single scan data analysis may be performed. Data analysis may include forming precursor charge clusters, chaining precursor charge clusters having the same mass to charge ratio to form peaks profiles, and using criteria to align precursor and product ions of the experimental data. Unsupervised and supervised clustering may be performed using a database and composite ion spectra formed from experimental data. Also described are a small molecule acquisition enhancement and additional techniques applicable for biopharmaceutical and other applications.
    Type: Grant
    Filed: May 31, 2016
    Date of Patent: February 25, 2020
    Assignee: WATERS TECHNOLOGIES CORPORATION
    Inventors: Scott J. Geromanos, Steven J. Ciavarini, Curt Devlin
  • Patent number: 10545408
    Abstract: A method of patterning a substrate may include providing a blanket photoresist layer on the substrate; performing an ion implantation procedure of an implant species into the blanket photoresist layer, the implant species comprising an enhanced absorption efficiency at a wavelength in the extreme ultraviolet (EUV) range; and subsequent to the performing the ion implantation procedure, performing a patterned exposure to expose the blanket photoresist layer to EUV radiation.
    Type: Grant
    Filed: October 18, 2017
    Date of Patent: January 28, 2020
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Tristan Y. Ma, Huixiong Dai, Anthony Renau, John Hautala, Joseph Olson
  • Patent number: 10522498
    Abstract: A system of bonded substrates may include a first substrate, a second substrate, and a bonding layer. The first substrate may include a bonding surface, wherein a geometry of the bonding surface of the first substrate includes a plurality of microchannels. The second substrate may include a complementary bonding surface. The bonding layer may be positioned between the first substrate and the second substrate, wherein the bonding layer may fill the microchannels of the first substrate and may contact substantially the entire bonding surface of the first substrate. The bonding layer may include a metal.
    Type: Grant
    Filed: May 18, 2017
    Date of Patent: December 31, 2019
    Assignee: TOYOTA MOTOR ENGINEERING & MANUFACTURING NORTH AMERICA, INC.
    Inventors: Shailesh N. Joshi, Masao Noguchi
  • Patent number: 10515784
    Abstract: Exemplary embodiments of the inventive concept provide a plasma treatment apparatus with a substrate support unit, a plasma unit, a first rotation driving unit, and a gas supply part. The substrate support unit supports a substrate. The plasma unit generates a plasma and provides the plasma to the substrate. The first rotation driving unit is coupled to the plasma unit to rotate the plasma unit with respect to the substrate support unit. The gas supply part supplies a source gas to the plasma unit. The plasma unit includes a body, a first electrode located in the body, a second electrode located in the body and facing the first electrode, and a pipe located between the first and second electrodes to flow the source gas therethrough.
    Type: Grant
    Filed: May 17, 2016
    Date of Patent: December 24, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Youngsik Yoon, Jaehoon Jung, Daeho Yoon, Jonghwan Cho
  • Patent number: 10490386
    Abstract: An ion beam treatment or implantation system includes an ion source emitting a plurality of parallel ion beams having a given spacing. A first lens magnet having a non-uniform magnetic field receives the plurality of ion beams from the ion source and focuses the plurality of ion beams toward a common point. The system may optionally include a second lens magnet having a non-uniform magnetic field receiving the ion beams focused by the first lens magnet and redirecting the ion beams such that they have a parallel arrangement having a closer spacing than said given spacing in a direction toward a target substrate.
    Type: Grant
    Filed: May 2, 2018
    Date of Patent: November 26, 2019
    Inventor: Peter F. Vandermeulen
  • Patent number: 10453689
    Abstract: An ion implantation method includes: irradiating a wafer arranged to meet a predetermined plane channeling condition with an ion beam; measuring a predetermined characteristic on a surface of the wafer irradiated with the ion beam; and evaluating an implant angle distribution of the ion beam by using a result of measurement of the characteristic. The wafer may be arranged so as to include a channeling plane parallel to a predetermined reference plane parallel to a reference trajectory direction of the ion beam incident on the wafer and not to include a channeling plane perpendicular to the reference plane and parallel to the reference trajectory direction.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: October 22, 2019
    Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
    Inventors: Yoji Kawasaki, Makoto Sano, Kazutaka Tsukahara
  • Patent number: 10395891
    Abstract: A resolving aperture assembly for an ion implantation system has a first plate and a second plate, where the first plate and second plate generally define a resolving aperture therebetween. A position of the first plate with respect to the second plate generally defines a width of the resolving aperture. One or more actuators are operably coupled to one or more of the first plate and second plate and are configured to selectively vary the position the first plate and second plate with respect to one another, thus selectively varying the width of the resolving aperture. A servo motor precisely varies the resolving aperture width and a pneumatic cylinder independently selectively closes the resolving aperture. A downstream position actuator varies a position of the resolving aperture along a path of the ion beam, and a controller controls the one or more actuators based on desired properties of the ion beam.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: August 27, 2019
    Assignee: Axcelis Technologies, Inc.
    Inventors: Michael Paul Cristoforo, Justin White McCabe
  • Patent number: 10354835
    Abstract: An ion implanter includes an ion source configured to generate an ion beam including an ion of a nonradioactive nuclide, a beamline configured to support an ion beam irradiated target, and a controller configured to calculate an estimated radiation dosage of a radioactive ray generated by a nuclear reaction between the ion of the nonradioactive nuclide incident into the ion beam irradiated target and the nonradioactive nuclide accumulated in the ion beam irradiated target as a result of ion beam irradiation performed previously.
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: July 16, 2019
    Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
    Inventor: Hiroshi Matsushita
  • Patent number: 10354877
    Abstract: Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.
    Type: Grant
    Filed: March 22, 2018
    Date of Patent: July 16, 2019
    Assignee: Entegris, Inc.
    Inventors: Oleg Byl, Edward A. Sturm, Ying Tang, Sharad N. Yedave, Joseph D. Sweeney, Steven G. Sergi, Barry Lewis Chambers
  • Patent number: 10332722
    Abstract: To provide an ion gun of a penning discharge type capable of narrowing a beam with a low ion beam current at a low acceleration voltage, an ion milling device including the same, and an ion milling method. An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 ?m to 350 ?m. The device includes: the ion gun that ionizes a gas supplied from the outside, and emits an ion beam; a gas-flow-rate varying unit that varies a flow rate of the gas supplied to the ion gun; and a current measurement unit that measures a current value of the ion beam emitted from the ion gun. The gas-flow-rate varying unit sets a gas flow rate to be higher than a gas flow rate at which the ion beam current has a maximum value based on the current value measured by the current measurement unit and the flow rate of the gas determined by the gas-flow-rate varying unit.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: June 25, 2019
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Kengo Asai, Hiroyasu Shichi, Hisayuki Takasu, Toru Iwaya
  • Patent number: 10329679
    Abstract: The invention generally relates to systems and methods for producing metal clusters; functionalized surfaces; and droplets including solvated metal ions. In certain aspects, the invention provides methods that involve providing a metal and a solvent. The methods additionally involve applying voltage to the solvated metal to thereby produce solvent droplets including ions of the metal containing compound, and directing the solvent droplets including the metal ions to a target. In certain embodiments, once at the target, the metal ions can react directly or catalyze reactions.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: June 25, 2019
    Assignee: Purdue Research Foundation
    Inventors: Robert Graham Cooks, Anyin Li, Thalappil Pradeep, Zane Baird
  • Patent number: 10324049
    Abstract: A process for the preparation and imaging of a sample of rock from an oil and gas reservoir is provided. A sample of reservoir rock may be obtained, such as from a core sample obtained using a core sampling tool inserted in a wellbore extending into an oil and gas reservoir. A photoresist may be deposited on the surface of reservoir rock sample to form a homogenous layer. The photoresist-coated surface of the reservoir rock sample may be imaged using a focused ion beam (FIB). The photoresist protects the pores and other surface features of the rock from damage or implantation by the FIB ion beam and thus minimizes the curtain effect in the resulting images.
    Type: Grant
    Filed: August 24, 2017
    Date of Patent: June 18, 2019
    Assignee: Saudi Arabian Oil Company
    Inventors: Dong kyu Cha, Sultan Enezi, Mohammed Al Otaibi, Ali Abdallah Al-Yousef
  • Patent number: 10279199
    Abstract: A system includes a patient support and an outer gantry on which an accelerator is mounted to enable the accelerator to move through a range of positions around a patient on the patient support. The accelerator is configured to produce a proton or ion beam having an energy level sufficient to reach a target in the patient. An inner gantry includes an aperture for directing the proton or ion beam towards the target.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: May 7, 2019
    Assignee: Mevion Medical Systems, Inc.
    Inventors: Kenneth P. Gall, Stanley J. Rosenthal, Gordon D. Row, Michael J. Ahearn
  • Patent number: 10276503
    Abstract: A method includes forming a dielectric layer and forming a metallic conductor at least partially in the dielectric layer. Formation of the metallic conductor at least partially in the dielectric layer includes performing a planarization process. The method further includes treating respective surface areas of the dielectric layer and the metallic conductor, after the planarization process, to modify the respective surface areas of the dielectric layer and the metallic conductor. In one example, the surface treatment is a neutral atom beam treatment.
    Type: Grant
    Filed: October 20, 2017
    Date of Patent: April 30, 2019
    Assignee: International Business Machines Corporation
    Inventor: Chih-Chao Yang
  • Patent number: 10260142
    Abstract: A method is described for the production of a manufactured article (20) constituted of an elastomeric polymer substrate, in selected zones of which there are deposits of particles of nanometric size of a metal or some other compound which create a region (24) of the polymeric element having desired electrical, biocompatibility and/or dielectric properties, and such that said properties are maintained even after numerous elastic deformations of the manufactured article; the invention also relates to functionalized elastomeric manufactured articles obtained by means of said method.
    Type: Grant
    Filed: March 30, 2011
    Date of Patent: April 16, 2019
    Assignee: Wise S.R.L.
    Inventors: Luca Ravagnan, Gabriele Corbelli, Cristian Ghisleri, Paolo Milani, Mattia Marelli
  • Patent number: 10233548
    Abstract: Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit (110) which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit (120) which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector (140) which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.
    Type: Grant
    Filed: July 5, 2011
    Date of Patent: March 19, 2019
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Terutaka Nanri, Tsuyoshi Onishi, Satoshi Tomimatsu
  • Patent number: 10227693
    Abstract: A workpiece processing system, has a process chamber coupled to an outgassing chamber. An outgassing chamber valve selectively isolates a processing environment from an outgassing environment defined within the respective process and outgassing chambers. A heater selectively heats the workpiece on a workpiece support in the outgassing chamber to a first predetermined temperature. A vacuum source selectively depressurizes the outgassing chamber to a first predetermined pressure. A workpiece transfer apparatus selectively transfers the workpiece between the outgassing and process chambers. A controller isolates the workpiece in the outgassing chamber by the outgassing chamber valve and is configured to concurrently heat the workpiece to the first predetermined temperature and depressurize the outgassing chamber to the first predetermined pressure by the respective heater and vacuum source.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: March 12, 2019
    Assignee: Axcelis Technologies, Inc.
    Inventor: John F. Baggett
  • Patent number: 10217607
    Abstract: An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.
    Type: Grant
    Filed: September 5, 2017
    Date of Patent: February 26, 2019
    Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
    Inventors: Kazuhisa Ishibashi, Shiro Ninomiya, Akihiro Ochi, Toshio Yumiyama
  • Patent number: 10163796
    Abstract: A method includes forming a dielectric layer and forming a metallic conductor at least partially in the dielectric layer. Formation of the metallic conductor at least partially in the dielectric layer includes performing a planarization process. The method further includes treating respective surface areas of the dielectric layer and the metallic conductor, after the planarization process, to modify the respective surface areas of the dielectric layer and the metallic conductor. In one example, the surface treatment is a neutral atom beam treatment.
    Type: Grant
    Filed: October 20, 2017
    Date of Patent: December 25, 2018
    Assignee: International Business Machines Corporation
    Inventor: Chih-Chao Yang
  • Patent number: 10112165
    Abstract: An apparatus for generating a desired gas is provided. The apparatus includes an effusion tube comprising a first zone and a second zone. The first zone includes walls of micro-porous metal tube, and a closed end. The second zone includes non-porous metal tube, and an open end. The two-zone effusion tube is fixtured inside of a larger cylindrical metal jacket with gas entry and exit ports at opposite ends of the jacket, which allows gas to flow over the exterior of the effusion tube. The effusion tube is configured to contain a matrix comprising media containing a parent compound and an inert media. A heating means for heating the effusion tube, thereby producing a desired gas which exits the open end of the metal jacket.
    Type: Grant
    Filed: September 20, 2017
    Date of Patent: October 30, 2018
    Assignee: Airgas, Inc.
    Inventors: Robert J. Grasmeder, Stephen B. Miller, Nolan R. Petrich
  • Patent number: 10096449
    Abstract: A cross-section processing-and-observation method includes: a cross-section exposure step of irradiating a sample with a focused ion beam to expose a cross-section of the sample; a cross-sectional image acquisition step of irradiating the cross-section with an electron beam to acquire a cross-sectional image of the cross-section; and a step of repeatedly performing the cross-section exposure step and the cross-sectional image acquisition step along a predetermined direction of the sample at a setting interval to acquire a plurality of cross-sectional images of the sample. In the cross-sectional image acquisition step, a cross-sectional image is acquired under different condition settings for a plurality of regions of the cross-section.
    Type: Grant
    Filed: May 23, 2016
    Date of Patent: October 9, 2018
    Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
    Inventors: Xin Man, Tatsuya Asahata, Atsushi Uemoto