Abstract: An extreme ultraviolet (EUV) light source device for generating EUV light through a plasma reaction, includes: a focusing lens for focusing a laser beam generated from a laser source; a vacuum chamber for providing a vacuum environment to generate the laser beam focused on the focusing lens as the EUV light through the plasma reaction; a gas jet nozzle for supplying a plasma reaction gas to the laser beam focused on the focusing lens to generate the EUV light; and a gas supply part for supplying the plasma reaction gas to the gas jet nozzle from the outside.

Abstract: A method of testing a semiconductor package includes: forming a charge measurement unit over a carrier substrate; forming a first dielectric layer over the charge measurement unit; forming a first metallization layer over the dielectric layer, wherein the forming of the first metallization layer induces first charges to accumulate on the charge measurement unit; performing a first test against the charge measurement unit to determine whether breakdown occurs in the charge measurement unit; and in response to determining that no breakdown occurs in the charge measurement unit, forming a second dielectric layer over the first metallization layer.

Abstract: There is provided a positron source for generating a positron beam. The positron source includes a laser arrangement configured to generate a beam of photons. A target is configured to receive the beam, wherein the target is arranged for the photons of the beam to generate a photon plasma at a surface layer of the target, wherein the surface layer is configured to preferentially absorb electrons from the photon plasma to generate corresponding free positrons. An electrode arrangement with one or more electrodes is configured to apply an electric field to the photon plasma to extract the free positrons therefrom and to guide the positrons to form the positron beam. At least the target and the electrode arrangement are included within a vacuum chamber configured in use to provide a vacuum condition in which the target and the electrode arrangement are arranged to function.

Abstract: An extreme ultraviolet (EUV) light source and a method for patterning a resist layer on a substrate using the EUV light source are disclosed. For example, the EUV light source includes a droplet generator, a droplet catcher, a laser source, a plurality of vanes, and a bucket. The droplet generator is to generate tin droplets. The droplet catcher is opposite to the droplet generator to catch the tin droplets. The laser source is to generate a laser beam striking the tin droplets to form a plasma. The plurality of vanes are arranged around an axis to collect tin debris created from the plasma. The bucket is connected to the vanes and includes a cover, a vane bucket, and a heater. The cover has an opening. The vane bucket is surrounded by the cover. The heater is on a sidewall of the cover and spaced apart from the droplet catcher.

Abstract: A substrate transport apparatus comprising a frame, a drive section connected to the frame, and an articulated arm having at least one articulated arm link operably connected to the drive section so that the articulated arm rotates about a pivot axis relative to the frame and extends and retracts relative to the pivot axis. The articulated arm has an end effector pivotally mounted to at least one articulated arm link forming a joint between the end effector and the articulated arm link, with an arm joint pivot axis disposed so that the end effector rotates relative to at least one articulated arm link about the arm joint pivot axis. The articulated arm has a drive band transmission with drive and driven pulleys where the driven pulley is connected to the articulated wrist.

Abstract: An extreme ultra violet (EUV) lithography method includes receiving an EUV light by a scanner from an EUV light source, the EUV light passing through an intermediate focus disposed in the scanner and at a junction of the EUV light source and the scanner; directing the EUV light by the scanner to a reticle in the scanner; and deflecting nanoparticles from the EUV light source away from the reticle by generating a gas flow using a gas jet disposed entirely in the scanner and proximate to an interface of the scanner and the intermediate focus such that the gas jet does not block the EUV light.

Abstract: An inspection apparatus for adjusting a working height for a substrate for multiple target heights is disclosed. The inspection apparatus includes a radiation source configured to provide a radiation beam and a beam splitter configured to split the radiation beam into multiple beamlets that each reflect off a substrate. Each beamlet contains light of multiple wavelengths. The inspection apparatus includes multiple light reflecting components, wherein each light reflecting component is associated with one of the beamlets reflecting off the substrate and is configured to support a different target height for the substrate by detecting a height or a levelness of the substrate based on the beamlet reflecting off the substrate.

Abstract: The beamlets in a multi-beam microscopy system are aligned based on coefficients of a fitted aberration model. In particular, an illuminator for directing the beamlets towards the sample is adjusted based on the coefficients to correct the aberrations. The coefficients are obtained based on measured beamlets' positions in the sample plane.

Abstract: Wafer-to-wafer and within-wafer image contrast variations can be identified and mitigated by extracting an image frame during recipe setup and then during runtime at the same location. Image contrast is determined for the two image frames. A ratio of the contrast for the two image frames can be used to determine contrast variations and focus variation.

Abstract: In an embodiment, an apparatus includes an energy source, a support platform for holding a wafer, an optical path extending from the energy source to the support platform, and a photomask aligned such that a patterned major surface of the photomask is parallel to the force of gravity, where the optical path passes through the photomask, where the patterned major surface of the photomask is perpendicular to a topmost surface of the support platform.

Abstract: Methods of characterizing semiconductor doping in a wide bandgap semiconductor sample include: measuring an initial value, V0, of a surface voltage at a region of a surface of the semiconductor sample in the dark; charging the region to deep depletion in the dark by depositing a prescribed corona charge at the region; measuring the surface voltage value in the dark at the region after charging; illuminating the charged region with light of a specific photon flux, ƒeff, having a photon energy above the semiconductor bandgap sufficient to generate free minority carriers in the semiconductor sample causing photoneutralization of the corona charge; monitoring of a photoneutralization induced corona charge decay at the region vs.

Abstract: A laser produced plasma light source comprises a vacuum chamber with a rotating target assembly supplying a target into an interaction zone with focused laser beam. The target is layer of a fluid and/or free-flowing target material on a surface of annular groove in the rotating target assembly. An output beam of short-wavelength radiation exits the interaction zone to an optical collector through the means for debris mitigation. A linear velocity of the target is not less than 100 m/s and a vector of the linear velocity of the target in the interaction zone is directed on one side of a plane passing through the interaction zone and the rotation axis while the focused laser beam and the output beam are located on another side of said plane. The optical collector comprises two ellipsoidal mirror units arranged in a tandem.

Abstract: A blanking deflector according to an embodiment includes: a first electrode comprising a first insulator, a first material film coating all surfaces of the first insulator and having lower resistance than the first insulator, and a first low-resistance film coating part or all of surfaces of the first material film and having lower resistance than the first material film; and a second electrode comprising a second insulator, a second material film coating all surfaces of the second insulator and having lower resistance than the second insulator, and a second low-resistance film coating part or all of surfaces of the second material film and having lower resistance than the second material film, wherein the blanking deflector controls whether to irradiate a specimen with a charged particle beam by causing the charged particle beam to pass between the first electrode and the second electrode.

Abstract: A system comprising a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on the spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The plurality of platens may extend outward from the central hub and workpieces are electrostatically clamped to the platens. The plurality of platens may also be capable of rotation. The central hub also controls the rotation of each of the platens about an axis orthogonal to the rotation axis of the central hub. In this way, variable angle implants may be performed. Additionally, this allows the workpieces to be mounted while in a horizontal orientation.

Abstract: A light emitting device includes a semiconductor laser element, a base member, and a cover. The base member includes a first alignment mark, a second alignment mark, a third alignment mark, and a fourth alignment mark. The base member has a disposition surface on which the semiconductor laser element is disposed. The cover is bonded to the base member to define a closed space in which the semiconductor laser element is arranged. The first alignment mark and the second alignment mark are arranged outside the closed space. The third alignment mark and the fourth alignment mark are arranged inside the closed space. A straight line connecting the first alignment mark and the second alignment mark is parallel to a straight line connecting the third alignment mark and the fourth alignment mark.

Abstract: An automatic adjustment method and an automatic adjustment device of a beam of a semiconductor apparatus, and a training method of a parameter adjustment model are provided. The automatic adjustment method of the beam of the semiconductor apparatus includes the following steps. The semiconductor apparatus generates the beam. A wave curve of the beam is obtained. The wave curve is segmented into several sections. The slope of each of the sections is obtained. Several environmental factors of the semiconductor apparatus are obtained. According to the slopes and the environmental factors, at least one parameter adjustment command of the semiconductor apparatus is analyzed through the parameter adjustment model.

Abstract: A sterilization apparatus includes a main body, and a plurality of sterilization modules. The main body defines a sterilization space for sterilization of a sterilization target. The sterilization modules are disposed on a plurality of inner surfaces of the main body surrounding the sterilization space, respectively, and deliver germicidal light to the sterilization space. In addition, the sterilization module includes a support member and a plurality of light sources. A space between adjacent light sources disposed in some regions of the support member is different from a space between adjacent light sources disposed in the other regions of the support member.

Abstract: The present invention relates to a semiconductor refrigeration and heating air conditioner which includes a body with an air outlet and air inlets, and also includes a semiconductor refrigeration assembly mounted in the body and located at the air outlet, metallic conductive sheets connected with the semiconductor refrigeration assembly, a water tank mounted at the lower end inside the body, a cooling water receptacle mounted at the lower end inside the body, a heat dissipation assembly mounted in the cooling water receptacle, and fan blades mounted in the body and close to the air inlets, wherein the semiconductor refrigeration assembly is connected with the heat dissipation assembly through a connection wire, the metallic conductive sheets face the air outlet, and the water tank is connected with the cooling water receptacle through a water pump assembly.

Abstract: There is provided a laser processing method for performing laser processing on a wafer having a functional layer on a substrate. The laser processing method includes a blackening step of emitting a pulsed laser beam of a wavelength transparent to the functional layer from a laser oscillator and blackening the functional layer by irradiating the functional layer with the pulsed laser beam of energy equal to or higher than a processing threshold value at which the functional layer is processed such that an overlap ratio of the pulsed laser beam successively applied to the functional layer is equal to or more than 90% and less than 100%, and a groove processing step of forming a laser-processed groove by irradiating the blackened functional layer with the pulsed laser beam and making the blackened functional layer absorb the pulsed laser beam, after performing the blackening step.

Abstract: An e-beam device includes a cold-field emission source to emit electrons and an extractor electrode to be positively biased with respect to the cold-field emission source to extract the electrons from the cold-field emission source. The extractor electrode has a first opening for the electrons. The e-beam device also includes a mirror electrode with a second opening for the electrons. The mirror electrode is configurable to be positively biased with respect to the extractor electrode during a first mode of operation and to be negatively biased with respect to the extractor electrode during a second mode of operation. The extractor electrode is disposed between the cold-field emission source and the mirror electrode. The e-beam device further includes an anode to be positively biased with respect to the extractor electrode and the cold-field emission source. The mirror electrode is disposed between the extractor electrode and the anode.

Abstract: An apparatus for removing a residue of an EUV light source vessel including an internal side surface having a curved surface is provided. The apparatus includes a frame portion configured to be disposed on a bottom surface of an EUV light source vessel and a head portion above the frame portion. The head portion is configured to be rotatably moved on a circular trajectory while maintaining a desired (and/or alternatively predetermined) distance from the curved surface of the EUV light source vessel. The head portion may have a heating member configured to emit heat toward the curved surface of the EUV light source vessel. The heating member may have a shape curved in an arc corresponding to a portion of the circular trajectory.

Abstract: In a charged particle beam writing method according to one embodiment, a deflector is caused to deflect a charged particle beam and a pattern is written by irradiating a substrate with the charged particle beam. The charged particle beam writing method includes calculating a charge amount distribution based on a charge amount of a beam irradiation region on the substrate immediately after irradiation with the charged particle beam and a diffusion coefficient for electric charge of the substrate, calculating a position shift distribution of the charged particle beam on the substrate based on the charge amount distribution, and correcting an irradiation position of the charged particle beam based on the position shift distribution.

Abstract: The present disclosure provides a method of achieving an integral number of sweeps within an ion beam. A substrate having a fiducial is placed on a wafer stage within the ion beam system. An energetic particle beam is generated within the ion beam system. The substrate is exposed to the energetic particle beam while the wafer stage with the substrate is rotated clockwise so that the fiducial of the substrate travels a sweep distance in a clockwise direction at a first speed and the fiducial of the substrate travels the same sweep distance in a counterclockwise direction at a second speed. The exposure of the substrate to the energetic particle beam is discontinued when the number of complete/full sweeps in the clockwise direction equals the number of complete/full sweeps in the counterclockwise direction.

Abstract: A lithographic apparatus has: a conduit through which a gas can flow; a gas mover configured to cause the gas to flow in the conduit; a wall in contact with the gas in the conduit and defining a membrane aperture therein; and an acoustic filter including a flexible membrane fixed in the membrane aperture. The acoustic filter reduces transmission of acoustic disturbances without adding any flow resistance.

Abstract: Provided are a method of forming a mask, the method accurately and quickly restoring an image on the mask to the shape on the mask, and a mask manufacturing method using the method of forming the mask. The method of forming a mask includes obtaining first images by performing rasterization and image correction on shapes on the mask corresponding to first patterns on a wafer, obtaining second images by applying a transformation to the shapes on the mask, performing deep learning based on a transformation relationship between ones of the first images and ones of the second images corresponding to the first images, and forming a target shape on the mask corresponding to a target pattern on the wafer, based on the deep learning. The mask is manufactured based on the target shape on the mask.

Abstract: The present disclosure relates to systems and methods for fabricating semiconductor packages, and more particularly, for forming features in semiconductor packages by laser ablation. In one embodiment, the laser systems and methods described herein can be utilized to pattern a substrate to be utilized as a package frame for a semiconductor package having one or more interconnections formed therethrough and/or one or more semiconductor dies disposed therein. The laser systems described herein can produce tunable laser beams for forming features in a substrate or other package structure. Specifically, frequency, pulse width, pulse shape, and pulse energy of laser beams are tunable based on desired sizes of patterned features and on the material in which the patterned features are formed. The adjustability of the laser beams enables rapid and accurate formation of features in semiconductor substrates and packages with controlled depth and topography.

Abstract: A multi-beam apparatus for multi-beam inspection with an improved source conversion unit providing more beamlets with high electric safety, mechanical availability and mechanical stabilization has been disclosed. The source-conversion unit comprises an image-forming element array having a plurality of image-forming elements, an aberration compensator array having a plurality of micro-compensators, and a pre-bending element array with a plurality of pre-bending micro-deflectors. In each of the arrays, adjacent elements are placed in different layers, and one element may comprise two or more sub-elements placed in different layers. The sub-elements of a micro-compensator may have different functions such as micro-lens and micro-stigmators.

Abstract: An apparatus comprising a beam emitter to emit a beam comprising electrons, ions or laser-light photons toward a target substrate. A motion sensor to detect mechanical vibrations of the target substrate. The motion sensor is mechanically coupled to the target substrate, a processor coupled to an output of the motion sensor. The processor is to generate a vibration correction signal proportional to the mechanical vibrations detected by the motion sensor, and beam steering optics coupled to the processor. The beam steering optics are to deflect the beam according to the vibration correction signal to compensate for the mechanical vibrations of the target substrate.

Abstract: A substrate processing method with an improved etch selectivity includes: a first operation for forming a film on a stepped structure having a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface, wherein a first atmosphere is set to reduce a mean free path of plasma ions and to cause the plasma ions to have no directionality; and a second operation for changing a bonding structure of a portion of the film, wherein a second atmosphere is set to cause the plasma ions to have directionality, wherein the first operation is repeated a plurality of times, the second operation is performed for a predetermined time period, the first operation and the second operation form a group cycle, and the group cycle is repeated by a plurality of times.

Abstract: A method including steps as follows is provided. A primary droplet and a satellite droplet are shot toward an excitation zone. The satellite droplet is deflected away from the excitation zone. A laser beam is emitted toward the excitation zone to excite the primary droplet to generate an extreme ultraviolet (EUV) light. The EUV light is directed onto a reticle using a first optical reflector, such that the EUV light is imparted with a pattern of the reticle. The EUV light with the pattern is directed onto a wafer using a second optical reflector.

Abstract: A substrate processing apparatus includes a liquid processing module, including a carry-out/in port of a substrate, in which a first liquid processing device and a second liquid processing device provided at a position farther from the carry-out/in port than the first liquid processing device is are provided; and a transfer device configured to carry the substrate out from and into the liquid processing module. The first liquid processing device performs a first liquid processing on the substrate. The second liquid processing device performs a second liquid processing on the substrate before or after the first liquid processing. The transfer device includes a substrate holder configured to be moved back and forth in a first horizontal direction, and carries the non-processed substrate into the first liquid processing device through the carry-out/in port and carries the processed substrate out from the first liquid processing device through the carry-out/in port.

Abstract: A system and method (referred to as the system) fabricates controllable atomic assemblies in two and three dimensions. The systems identify by a non-invasive imager, a local atomic structure, distribution of vacancies, and dopant atoms and modify, by a microscopic modifier, the local atomic structure, via electron beam irradiation. The systems store, by a knowledge base, cause-and-effect relationships based on a non-invasive imaging and electron scans. The systems detect, by detectors, changes in the local atomic structure induced by the electron irradiation; and fabricate, a modified atomic structure by a beam control software and feedback.

Abstract: Systems and methods of sample preparation using dual ion beam trenching are described. In an example, an inside of a semiconductor package is non-destructively imaged to determine a region of interest (ROI). A mask is positioned over the semiconductor package, and a mask window is aligned with the ROI. A first ion beam and a second ion beam are swept, simultaneously or sequentially, along an edge of the mask window to trench the semiconductor package and to expose the ROI for analysis.

Abstract: The present application relates to semiconductor integrated circuit manufacturing equipment, in particular to a cleaning fluid guide device for wet cleaning equipment, wherein a positive voltage end and a negative voltage end are provided on both ends of a nozzle to apply an electric field to a cleaning fluid sprayed by the nozzle, and the electric field guides the cleaning fluid to form an included angle ? between the cleaning fluid and a wafer backside, such that spraying of the cleaning fluid does not always start from the center of the wafer backside, avoiding the problem that the center of the wafer backside is relatively thin while the edge thereof is relatively thick after a plurality of repeated wet cleaning processes, and thereby improving the yield of semiconductor devices.

Abstract: An optical arrangement for EUV lithography, including: at least one component (23) having a main body (32) with at least one surface region (30) which is exposed to activated hydrogen (H+, H*) during operation of the optical arrangement. The main body (32) contains at least one material which forms at least one volatile hydride upon contact of the surface region (30) with the activated hydrogen (H+, H*). At the surface region, noble metal ions (38) are implanted into the main body (32) in order to prevent the formation of the volatile hydride.

Abstract: The present disclosure relates to an extreme ultraviolet lithography, EUVL, device comprising: a reticle comprising a lithographic pattern to be imaged on a target wafer; a light-transmissive pellicle membrane mounted in front of, and parallel to, the reticle, wherein the pellicle membrane scatters transmitted light along a scattering axis; and an extreme ultraviolet, EUV, illumination system configured to illuminate the reticle through the pellicle membrane, wherein an illumination distribution provided by the EUV illumination system is asymmetric as seen in a source-pupil plane of the EUV illumination system; wherein light reflected by the reticle and then transmitted through the pellicle membrane comprises a non-scattered fraction and a scattered fraction formed by light scattered by the pellicle membrane; the EUVL device further comprising: an imaging system having an acceptance cone configured to capture a portion of the light reflected by the reticle and then transmitted through the pellicle membrane.

Abstract: A hot plate of a resist removing apparatus is disposed in a processing space and heated to a predetermined temperature. A substrate has on an upper surface thereof, a pattern of a resist having a surface on which an altered layer is formed. A moving mechanism moves a plurality of lift pins relative to a hot plate. An upper surface of the substrate is supplied with ozone gas. A control part disposes the substrate at a first processing position with a clearance from the hot plate and removes the altered layer by using the ozone gas, and subsequently controls the moving mechanism to dispose the substrate at a second processing position with a clearance smaller than that between the first processing position and the hot plate and removes the resist by using the ozone gas. It is thereby possible to efficiently remove the resist from the substrate while preventing popping.

Abstract: The disclosure provides a method for defect classification, including: extracting a low-level feature of a defect region from a defect image; encoding the low-level feature by using a defect dictionary to obtain a middle-level semantic feature corresponding to the low-level feature; classifying a defect in the defect region of the defect image into one of a plurality of defect categories based on the middle-level semantic feature, wherein the defect dictionary includes a defect intra-category dictionary and a defect inter-category dictionary.

Abstract: An eddy current system and methods of performing operations on a structure using the eddy current system are presented. The eddy current system comprises an ion beam source and a magnetic field source with at least one of variable output intensity or variable output orientation.

Abstract: Provided is a mass separator (100) for performing mass separation for an ion beam (IB). The mass separator (100) includes a transfer structure (30) that is a component of a yoke (13) and move at least one of an upper yoke (13a) positioned over the beam path (L), a lower yoke (13b) positioned under the beam path (L), and a side yoke (13c, 13d) positioned at a side of the beam path (L) between a normal position (P) in the traveling of the ion beam (IB) and a retracted position (Q) that does not overlap with at least a part of the normal position (P); the yoke (13) is surrounding the beam path (L) and is made of a magnetic body.

Abstract: Multi-beam e-beam columns and inspection systems that use such multi-beam e-beam columns are disclosed. A multi-beam e-beam column configured in accordance with the present disclosure may include an electron source and a multi-lens array configured to produce a plurality of beamlets utilizing electrons provided by the electron source. The multi-lens array may be further configured to shift a focus of at least one particular beamlet of the plurality of beamlets such that the focus of the at least one particular beamlet is different from a focus of at least one other beamlet of the plurality of beamlets.

Abstract: A method, including using an implant recipe to perform an implant by scanning an ion beam along a first axis over a substrate, coated with a photoresist layer, while the substrate is scanned along a perpendicular axis; measuring an implant current (I) during the implant, using a first detector, positioned to a side of a substrate position; determining a value of a difference ratio (I?B)/(B), based upon the implant current, where B is current measured by the first detector, during a calibration at base pressure; determining a plurality of values of a current ratio (CR) for the plurality of instances, based upon the difference ratio, the current ratio being a ratio of the implant current to a current measured by a second detector, positioned over the substrate position, during the calibration; and adjusting scanning the ion beam, scanning of the substrate, or a combination thereof, based upon the current ratio.

Abstract: A method of operating a charged particle beam device is disclosed, including focusing a charged particle beam onto a sample with an objective lens assembly; passing a reflected light beam through a bore of the objective lens assembly to an interferometer; and interferometrically determining a z-position of the sample with the interferometer. A charged particle beam device is disclosed, including a charged particle beam generator which has a charged particle source. A charged particle path for the charged particle beam extends through a bore of an objective lens assembly toward a sample stage. An interferometer is arranged to receive a reflected light beam which passes through the bore of the objective lens assembly.

Abstract: Apparatus and methods are disclosed for sample preparation, suitable for online or offline use with multilayer samples. Ion beam technology is leveraged to provide rapid, accurate delayering with etch stops at a succession of target layers. In one aspect, a trench is milled around a region of interest (ROI), and a conductive coating is developed on an inner sidewall. Thereby, reliable conducting paths are formed between intermediate layers within the ROI and a base layer, and stray current paths extending outside the ROI are eliminated, providing better quality etch progress monitoring, during subsequent etching, from body or scattered currents. Ion beam assisted gas etching provides rapid delayering with etch stops at target polysilicon layers. Uniform etching at deep layers can be achieved. Variations and results are disclosed.

Abstract: A radiation source contains a collector module comprising an optical collector, positioned in a vacuum chamber with an emitting plasma, further comprising a means for debris mitigation which include at least two casings arranged to output debris-free homocentric beams of the short-wavelength radiation, coming to the optical collector preferably consisting of several identical mirrors. Outside each casing there are permanent magnets that create a magnetic field inside the casings to mitigate charged fraction of debris particles and provide the debris-free homocentric beams of short-wavelength radiation. Other debris mitigating techniques are additionally used. Preferably the plasma is laser-produced plasma of a liquid metal target supplied by a rotating target assembly to a focus area of a laser beam. The technical result of the invention is the creation of high-powerful high-brightness debris-free sources of short-wavelength radiation with large, preferably more than 0.25 sr, collection solid angle.

Abstract: A radiation treatment apparatus includes an accelerator that emits a charged particle beam, a time measurement unit that measures an emission time of the charged particle beam of the accelerator, a first control unit that controls the accelerator based on the emission time measured by the time measurement unit, and an emission determination unit that determines whether or not the accelerator is emitting the charged particle beam while the first control unit is controlling the accelerator. The time measurement unit adds a time, for which a result of a determination performed by the emission determination unit is that the accelerator is emitting the charged particle beam, to the emission time and does not add a time, for which the result of the determination performed by the emission determination unit is that the accelerator is not emitting the charged particle beam, to the emission time.

Abstract: This application provides a method for generating an exposure compensation table, a method for photoresist exposure compensation, and an exposure machine. The method for generating an exposure compensation table includes: recording preset exposure parameters and a critical dimension value of a photoresist pattern; and exposing and developing until all preset exposure parameters have been tested.

Abstract: Sensors measure magnetic field components, and the measured fields are used to calculate and estimated transverse position of a longitudinal electric current flowing as an electric discharge across a discharge gap. Based on the estimated position, and according to a selected transverse trajectory or distribution of the estimated discharge position, magnetic fields are applied transversely across the discharge gap so as to control or alter the estimated discharge position. Inventive apparatus and methods can be employed, inter alia, during operation of a vacuum arc furnace.

Abstract: A lithography method in semiconductor fabrication is provided. The method includes generating multiple groups of small drops of a target material through a number of nozzles in such a way that small drops in each of the groups are aggregated to an elongated droplet of the target material. The method also includes generating a laser pulse from a laser generator to convert the elongated droplets to plasma which generates an EUV radiation. The method further includes exposing a semiconductor wafer to the EUV radiation.

Abstract: A method for generating extreme ultraviolet (EUV) radiation includes introducing a fuel droplet; applying a first laser beam to strike the fuel droplet at a location to generate EUV radiation and form a movable debris of the fuel droplet; and forming an energy field proximal to the location of the first laser beam strike to trap the movable debris. An EUV radiation source includes a fuel droplet generator, a first laser, a collector and an energy field. The fuel droplet generator is configured to provide a fuel droplet. The first laser is configured to generate a first laser beam to strike the fuel droplet at a location to generate EUV radiation and form a movable debris. The collector is configured to reflect the EUV radiation. The energy field is configured to trap the movable debris, wherein the energy field is proximal to the location of the first laser beam strike.