Irradiation Of Semiconductor Devices Patents (Class 250/492.2)
  • Patent number: 11322342
    Abstract: Provided is a mass separator (100) for performing mass separation for an ion beam (IB). The mass separator (100) includes a transfer structure (30) that is a component of a yoke (13) and move at least one of an upper yoke (13a) positioned over the beam path (L), a lower yoke (13b) positioned under the beam path (L), and a side yoke (13c, 13d) positioned at a side of the beam path (L) between a normal position (P) in the traveling of the ion beam (IB) and a retracted position (Q) that does not overlap with at least a part of the normal position (P); the yoke (13) is surrounding the beam path (L) and is made of a magnetic body.
    Type: Grant
    Filed: March 11, 2020
    Date of Patent: May 3, 2022
    Assignee: NISSIN ION EQUIPMENT CO., LTD.
    Inventors: Daiki Takashima, Ippei Nishimura
  • Patent number: 11320476
    Abstract: An eddy current system and methods of performing operations on a structure using the eddy current system are presented. The eddy current system comprises an ion beam source and a magnetic field source with at least one of variable output intensity or variable output orientation.
    Type: Grant
    Filed: July 15, 2019
    Date of Patent: May 3, 2022
    Assignee: The Boeing Company
    Inventor: Brian Jay Tillotson
  • Patent number: 11302511
    Abstract: Multi-beam e-beam columns and inspection systems that use such multi-beam e-beam columns are disclosed. A multi-beam e-beam column configured in accordance with the present disclosure may include an electron source and a multi-lens array configured to produce a plurality of beamlets utilizing electrons provided by the electron source. The multi-lens array may be further configured to shift a focus of at least one particular beamlet of the plurality of beamlets such that the focus of the at least one particular beamlet is different from a focus of at least one other beamlet of the plurality of beamlets.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: April 12, 2022
    Assignee: KLA Corporation
    Inventors: Alan Brodie, Rainer Knippelmeyer, Christopher Sears, John Rouse, Grace Hsiu-Ling Chen
  • Patent number: 11264205
    Abstract: A method, including using an implant recipe to perform an implant by scanning an ion beam along a first axis over a substrate, coated with a photoresist layer, while the substrate is scanned along a perpendicular axis; measuring an implant current (I) during the implant, using a first detector, positioned to a side of a substrate position; determining a value of a difference ratio (I?B)/(B), based upon the implant current, where B is current measured by the first detector, during a calibration at base pressure; determining a plurality of values of a current ratio (CR) for the plurality of instances, based upon the difference ratio, the current ratio being a ratio of the implant current to a current measured by a second detector, positioned over the substrate position, during the calibration; and adjusting scanning the ion beam, scanning of the substrate, or a combination thereof, based upon the current ratio.
    Type: Grant
    Filed: November 9, 2020
    Date of Patent: March 1, 2022
    Assignee: APPLIED Materials, Inc.
    Inventors: Eric Donald Wilson, George Gammel
  • Patent number: 11257657
    Abstract: A method of operating a charged particle beam device is disclosed, including focusing a charged particle beam onto a sample with an objective lens assembly; passing a reflected light beam through a bore of the objective lens assembly to an interferometer; and interferometrically determining a z-position of the sample with the interferometer. A charged particle beam device is disclosed, including a charged particle beam generator which has a charged particle source. A charged particle path for the charged particle beam extends through a bore of an objective lens assembly toward a sample stage. An interferometer is arranged to receive a reflected light beam which passes through the bore of the objective lens assembly.
    Type: Grant
    Filed: February 18, 2020
    Date of Patent: February 22, 2022
    Assignee: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH
    Inventors: John Breuer, Rony Reuveni, Alexander Goldenstein
  • Patent number: 11257683
    Abstract: Apparatus and methods are disclosed for sample preparation, suitable for online or offline use with multilayer samples. Ion beam technology is leveraged to provide rapid, accurate delayering with etch stops at a succession of target layers. In one aspect, a trench is milled around a region of interest (ROI), and a conductive coating is developed on an inner sidewall. Thereby, reliable conducting paths are formed between intermediate layers within the ROI and a base layer, and stray current paths extending outside the ROI are eliminated, providing better quality etch progress monitoring, during subsequent etching, from body or scattered currents. Ion beam assisted gas etching provides rapid delayering with etch stops at target polysilicon layers. Uniform etching at deep layers can be achieved. Variations and results are disclosed.
    Type: Grant
    Filed: June 17, 2020
    Date of Patent: February 22, 2022
    Assignee: FEI Company
    Inventors: James Clarke, Micah LeDoux, Jason Lee Monfort, Brett Avedisian
  • Patent number: 11252810
    Abstract: A radiation source contains a collector module comprising an optical collector, positioned in a vacuum chamber with an emitting plasma, further comprising a means for debris mitigation which include at least two casings arranged to output debris-free homocentric beams of the short-wavelength radiation, coming to the optical collector preferably consisting of several identical mirrors. Outside each casing there are permanent magnets that create a magnetic field inside the casings to mitigate charged fraction of debris particles and provide the debris-free homocentric beams of short-wavelength radiation. Other debris mitigating techniques are additionally used. Preferably the plasma is laser-produced plasma of a liquid metal target supplied by a rotating target assembly to a focus area of a laser beam. The technical result of the invention is the creation of high-powerful high-brightness debris-free sources of short-wavelength radiation with large, preferably more than 0.25 sr, collection solid angle.
    Type: Grant
    Filed: November 19, 2020
    Date of Patent: February 15, 2022
    Assignees: Isteq B.V., RnD-ISAN. Ltd
    Inventors: Vladimir Vitalievich Ivanov, Aleksandr Yurievich Vinokhodov, Konstantin Nikolaevich Koshelev, Mikhail Sergeyevich Krivokorytov, Vladimir Mikhailovich Krivtsun, Aleksandr Andreevich Lash, Vyacheslav Valerievich Medvedev, Yury Viktorovich Sidelnikov, Oleg Feliksovich Yakushev, Oleg Borisovich Khristoforov, Denis Aleksandrovich Glushkov, Samir Ellwi
  • Patent number: 11243474
    Abstract: This application provides a method for generating an exposure compensation table, a method for photoresist exposure compensation, and an exposure machine. The method for generating an exposure compensation table includes: recording preset exposure parameters and a critical dimension value of a photoresist pattern; and exposing and developing until all preset exposure parameters have been tested.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: February 8, 2022
    Assignee: HKC CORPORATION LIMITED
    Inventor: Bei Zhou Huang
  • Patent number: 11246209
    Abstract: A radiation treatment apparatus includes an accelerator that emits a charged particle beam, a time measurement unit that measures an emission time of the charged particle beam of the accelerator, a first control unit that controls the accelerator based on the emission time measured by the time measurement unit, and an emission determination unit that determines whether or not the accelerator is emitting the charged particle beam while the first control unit is controlling the accelerator. The time measurement unit adds a time, for which a result of a determination performed by the emission determination unit is that the accelerator is emitting the charged particle beam, to the emission time and does not add a time, for which the result of the determination performed by the emission determination unit is that the accelerator is not emitting the charged particle beam, to the emission time.
    Type: Grant
    Filed: September 14, 2020
    Date of Patent: February 8, 2022
    Assignee: SUMITOMO HEAVY INDUSTRIES, LTD.
    Inventor: Kenzo Sasai
  • Patent number: 11236404
    Abstract: Sensors measure magnetic field components, and the measured fields are used to calculate and estimated transverse position of a longitudinal electric current flowing as an electric discharge across a discharge gap. Based on the estimated position, and according to a selected transverse trajectory or distribution of the estimated discharge position, magnetic fields are applied transversely across the discharge gap so as to control or alter the estimated discharge position. Inventive apparatus and methods can be employed, inter alia, during operation of a vacuum arc furnace.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: February 1, 2022
    Assignee: KW ASSOCIATES LLC
    Inventors: Matthew A. Cibula, Joshua R. Motley, C. Rigel Woodside, Paul E. King
  • Patent number: 11239001
    Abstract: A method for generating extreme ultraviolet (EUV) radiation includes introducing a fuel droplet; applying a first laser beam to strike the fuel droplet at a location to generate EUV radiation and form a movable debris of the fuel droplet; and forming an energy field proximal to the location of the first laser beam strike to trap the movable debris. An EUV radiation source includes a fuel droplet generator, a first laser, a collector and an energy field. The fuel droplet generator is configured to provide a fuel droplet. The first laser is configured to generate a first laser beam to strike the fuel droplet at a location to generate EUV radiation and form a movable debris. The collector is configured to reflect the EUV radiation. The energy field is configured to trap the movable debris, wherein the energy field is proximal to the location of the first laser beam strike.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: February 1, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD
    Inventors: Tzu Han Liu, Chih-Wei Wen, Chung-Hung Lin
  • Patent number: 11237483
    Abstract: A lithography method in semiconductor fabrication is provided. The method includes generating multiple groups of small drops of a target material through a number of nozzles in such a way that small drops in each of the groups are aggregated to an elongated droplet of the target material. The method also includes generating a laser pulse from a laser generator to convert the elongated droplets to plasma which generates an EUV radiation. The method further includes exposing a semiconductor wafer to the EUV radiation.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: February 1, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi-Hung Liao, Yueh-Lin Yang
  • Patent number: 11229109
    Abstract: The present disclosure provides a system and method for providing electrostatic discharge protection. A probe card assembly is provided which is electrically connected to a plurality of input/output channels. The probe card assembly can be contacted with a secondary assembly having an interposer electrically connected to one or more wafers each wafer having a device under test. Voltage can be forced on ones of the plural input/output channels of the probe card assembly to slowly dissipate charges resident on the wafer to thereby provide electrostatic discharge protection. A socket assembly adaptable to accept a 3DIC package is also provided, the assembly having a loadboard assembly electrically connected to a plurality of input/output channels. Once the 3DIC package is placed within the socket assembly, voltage is forced on ones of the input/output channels to slowly dissipate charges resident on the 3DIC package to thereby provide electrostatic discharge protection.
    Type: Grant
    Filed: April 17, 2020
    Date of Patent: January 18, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Mill-Jer Wang, Ching-Nen Peng, Hung-Chih Lin, Hao Cheng
  • Patent number: 11204558
    Abstract: An object stage that includes a first structure and a second structure movable relative to the first structure. The second structure is configured to support an object. The object stage also includes a seal plate movably coupled to the first structure or the second structure, but not both. Further, the object stage includes an actuator configured to move the seal plate such that a substantially constant gap is defined between the seal plate and the first structure or second structure that is not coupled to the seal plate.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: December 21, 2021
    Assignees: ASML Netherlands B.V., ASML Holding N.V.
    Inventors: Yang-Shan Huang, Daniel Nathan Burbank, Marco Koert Stavenga
  • Patent number: 11199363
    Abstract: A method for at least partially removing a contamination layer (24) from an optical surface (14a) of an optical element (14) that reflects EUV radiation includes: performing an atomic layer etching process for at least partially removing the contamination layer (24) from the optical surface (14a), which, in turn, includes: exposing the contamination layer (24) to a surface-modifying reactant (44) in a surface modification step, and exposing the contamination layer (24) to a material-detaching reactant (45) in a material detachment step. The optical element (14) is typically taken, before the atomic layer etching process is performed, from an optical arrangement, in particular from an EUV lithography system, in which the optical surface (14a) of the optical element (14) is exposed to EUV radiation (6), during which the contamination layer (24) is formed.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: December 14, 2021
    Assignee: CARL ZEISS SMT GMBH
    Inventors: Fred Roozeboom, Dirk Heinrich Ehm, Andrea Illiberi, Moritz Becker, Edwin Te Sligte, Yves Lodewijk Maria Creijghton
  • Patent number: 11181818
    Abstract: The present disclosure relates to a lithography scanner including: a light source configured to emit extreme ultra-violet (EUV) light; a pellicle including an EUV transmissive membrane that is configured to scatter the EUV light into an elliptical scattering pattern having a first major axis; a reticle configured to reflect the scattered EUV light through the pellicle; and an imaging system configured to project a portion of the reflected light that enters an acceptance cone of the imaging system onto a target wafer, wherein a cross section of the acceptance cone has a second major axis, and wherein the pellicle is arranged such that the first major axis is oriented at an angle relative to the second major axis.
    Type: Grant
    Filed: July 31, 2019
    Date of Patent: November 23, 2021
    Assignees: IMEC VZW, KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&D
    Inventors: Emily Gallagher, Joern-Holger Franke, Ivan Pollentier, Marina Timmermans, Marina Mariano Juste
  • Patent number: 11183366
    Abstract: A multi-beam writing method includes performing the k-th tracking control (k being a natural number) by beam deflection in order to follow movement of the stage while collecting each beam of multiple beams, performing a plurality of shots of the multiple beams by the each beam simultaneously shifting in a rectangular or square irradiation region, which is surrounded by the size of the beam pitch and corresponding to the each beam, while performing the k-th tracking control, and returning, after the period of the k-th tracking control has passed, the tracking position to a position which is obtained by adding an offset of an integer multiple of the size of the beam pitch to the tracking starting position of the k-th tracking control where the k-th tracking control started, to be as a starting position of the (k+1)th tracking control.
    Type: Grant
    Filed: June 26, 2020
    Date of Patent: November 23, 2021
    Assignee: NuFlare Technology, Inc.
    Inventor: Hiroshi Matsumoto
  • Patent number: 11155461
    Abstract: Systems, methods, and tools for the synthesis of atomically-precise products via mechanosynthesis are disclosed, including a set of atomically-precise tips and associated reactions, methods for determining build sequences for workpieces, exemplary build sequences, and methods for creating new reactions, build sequences, and tips.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: October 26, 2021
    Assignee: CBN Nano Technologies Inc.
    Inventors: Robert A. Freitas, Jr., Ralph C. Merkle
  • Patent number: 11152251
    Abstract: A method for manufacturing a semiconductor device includes forming a source region, a drain region, and a gate dielectric layer and a gate electrode covering a channel region between the source region and the drain region, forming an insulating layer over the source region, the drain region, and the gate electrode, forming first to third vias penetrating the insulating layer and exposing portions of the source region, the drain region, and the gate electrode, respectively, forming a source contact in the first via to electrically connect to the source region, forming a drain contact in the second via to electrically connect to the drain region, and forming a gate contact in the third via to electrically connect to the gate electrode. One or more of the first to third vias is formed by ion bombarding by a focused ion beam and followed by a thermal annealing process.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: October 19, 2021
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Che-Wei Yang, Hao-Hsiung Lin
  • Patent number: 11126092
    Abstract: A method including: determining a value of a characteristic of a patterning process or a product thereof, at a current value of a processing parameter; determining whether a termination criterion is met by the value of the characteristic; if the termination criterion is not met, determining a new value of the processing parameter from the current value of the processing parameter and a prior value of the processing parameter, and setting the current value to the new value and repeating the determining steps; and if the termination criterion is met, providing the current value of the processing parameter as an approximation of a value of the processing parameter at which the characteristic has a target value.
    Type: Grant
    Filed: October 7, 2016
    Date of Patent: September 21, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Lin Lee Cheong, Wenjin Huang, Bruno La Fontaine
  • Patent number: 11120975
    Abstract: An ion-beam etching apparatus includes: a plasma chamber configured to generate plasma from process gas in the plasma chamber; at least one plasma valve coupled to the plasma chamber; an ion-beam source in communication with the plasma chamber, wherein the ion-beam source is configured to extract ions from the plasma and generate ion-beams when a bias is applied to the ion-beam source; an etching chamber in communication with the ion-beam source, and configured to accommodate an object to be etched; at least one etching valve coupled to the etching chamber; and at least one exhausting pump connected to either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively, wherein the at least one exhausting pump is configured to receive and exhaust radicals in either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: September 14, 2021
    Assignee: Research and Business Foundation Sungkyunkwan University
    Inventors: Geun Young Yeom, Jin Woo Park, Doo San Kim, Jong Sik Oh, Da In Sung, You Jin Ji, Won Oh Lee, Mu Kyeom Mun, Kyung Chae Yang, Ki Seok Kim, Ji Soo Oh, Ki Hyun Kim
  • Patent number: 11120970
    Abstract: The invention provided an ion implantation system. The ion implantation system comprises an ion emitting device and a target plate device; the target plate device comprises a graphite electrode unit and a power supply unit; the graphite electrode unit is mounted on the lower end of a support frame, and the graphite electrode unit is a hollow structure; the graphite electrode unit comprises a graphite electrode and a hollow region I, the graphite electrode is connected to the power supply unit; the area of the hollow region I is smaller than that of the wafer to be processed, and the sum of the area of the graphite electrode and the area of the hollow region I is larger than an implantation area of the ion beam.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: September 14, 2021
    Assignee: SHANGHAI IC R&D CENTER CO., LTD
    Inventors: Xiaoxu Kang, Shaohai Zeng
  • Patent number: 11106144
    Abstract: Method of determining a photodetector contribution to a measurement of apodization of a projection system of an immersion lithography apparatus, the method comprising providing a beam of radiation, illuminating an object with the beam of radiation, using the projection system to project an image of the object through a liquid layer and onto a photodetector, performing a first set of measurements of radiation intensity across a pupil plane of the projection system at a first liquid layer thickness, performing a second set of measurements of radiation intensity across the pupil plane of the projection system at a different liquid layer thickness, determining a set of intensity differences from the first set of measurements and the second set of measurements, comparing the determined set of intensity differences to an expected set of intensity difference, and using the results of the comparison to determine the photodetector contribution to a measurement of apodization.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: August 31, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Paulus Hubertus Petrus Koller, Johannes Jacobus Matheus Baselmans, Bartolomeus Petrus Rijpers
  • Patent number: 11092170
    Abstract: A stage assembly (10) includes a stage (14), and a fluid actuator assembly (24) that moves the stage (14). The fluid actuator assembly (24) includes a piston housing (32) that defines a piston chamber (34); (ii) a piston (36) that separates the piston chamber (34) into a first chamber (34A) and a second chamber (34B); (iii) a supply valve (38C) that controls the flow of the working fluid (40) into the first chamber (34A); and (iv) an exhaust valve (38D) that controls the flow of the working fluid (40) out of the first chamber (34A). The supply valve (38C) has a supply orifice (250G) having a supply orifice area, and the exhaust valve (38D) has an exhaust orifice (352G) having an exhaust orifice area. Moreover, the supply orifice area is different from the exhaust orifice area. Further multiple valves of different sizes can be used in combination for the supply and exhaust for each chamber (34A), (34B).
    Type: Grant
    Filed: February 12, 2018
    Date of Patent: August 17, 2021
    Inventors: Alex Ka Tim Poon, Yeong-Jun Choi, Pai-Hsueh Yang, Sandy Lee, Gaurav Keswani, Rocky Mai
  • Patent number: 11084207
    Abstract: A method of making an object on a bottom-up stereolithography apparatus is provided. The apparatus includes a light source (11), a drive assembly (14), and a controller (15) operatively associated with the light source and the drive assembly, with the light source and/or the drive assembly having at least one adjustable parameter that is adjustable by the controller. The method includes installing a removable window cassette (12) on the apparatus in a configuration through which the light source projects, the window cassette comprising an optically transparent member, provided as a window (12a), having a build surface on which an object can be produced, and with the optically transparent member having and at least one variable property therein; and then modifying the at least one adjustable parameter by the controller based on the at least one variable optical property of the window; and then producing the object on the build surface from a light-polymerizable liquid by bottom-up stereolithography.
    Type: Grant
    Filed: October 19, 2018
    Date of Patent: August 10, 2021
    Assignee: Carbon, Inc.
    Inventors: Anant Chimmalgi, Jiayao Zhang, James Michael Ian Bennett, Bob E. Feller
  • Patent number: 11089670
    Abstract: Some embodiments include a system, comprising: a plurality of accelerator structures, each accelerator structure including an RF input and configured to accelerate a different particle beam; an RF source configured to generate RF power; and an RF network coupled between the RF source and each of the RF inputs of the accelerator structures and configured to split the RF power among the RF inputs of the accelerator structures.
    Type: Grant
    Filed: September 27, 2019
    Date of Patent: August 10, 2021
    Assignee: Varex Imaging Corporation
    Inventor: Andrey V. Mishin
  • Patent number: 11081067
    Abstract: A display substrate of an electronic ink screen and a display device thereof are disclosed. The display substrate of the electronic ink screen includes: a base substrate having a display region and a non-display region; a display structure disposed in the display region of the base substrate; and a photoelectric conversion device disposed in the non-display region of the base substrate, wherein the photoelectric conversion device is connected to a driving circuit of the electronic ink screen and is configured to convert an optical signal of ambient light of the electronic ink screen to an electrical signal so as to supply power to the driving circuit.
    Type: Grant
    Filed: October 23, 2019
    Date of Patent: August 3, 2021
    Assignees: Beijing BOE Optoelectronics Technology Co., Ltd., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Rui Xu, Chao Tian
  • Patent number: 11073765
    Abstract: For increasing reflectivity a reflective optical element for the extreme ultraviolet wavelength range consists of at least two upper units, in which each upper unit (B1-B5) has a plurality of lower units, for example reflective optical elements in the form of mirror arrays. A method for producing the reflective optical element includes: determination of incidence angles and incidence angle bandwidths occurring during operation above the surface of each upper unit (B1-B5); and application of a reflective coating to each upper unit (B1-B5), adapted to the incidence angles and incidence angle bandwidths respectively determined above the surface of each upper unit. This is particularly suitable for producing reflective optical elements embodied as field facet mirrors, particularly in the form of microelectromechanical mirror arrays, for an EUV lithography device.
    Type: Grant
    Filed: August 2, 2018
    Date of Patent: July 27, 2021
    Assignee: CARL ZEISS SMT GMBH
    Inventor: Hartmut Enkisch
  • Patent number: 11054738
    Abstract: A pellicle characterized by having an amount of released aqueous gas of 1×10?3 Pa·L/s or less per pellicle, an amount of released hydrocarbon-based gas of 1×10?5 Pa·L/s or less per pellicle in a range of measured mass number of 45 to 100 amu, and an amount of released hydrocarbon-based gas of 4×10?7 Pa·L/s or less per pellicle in a range of measured mass number of 101 to 200 amu, under vacuum after the pellicle has been left to stand for 10 minutes in an atmosphere of 23° C. and 1×10?3 Pa or less.
    Type: Grant
    Filed: December 2, 2019
    Date of Patent: July 6, 2021
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Yu Yanase
  • Patent number: 11049691
    Abstract: A system and method for optimizing a ribbon ion beam in a beam line implantation system is disclosed. The system includes a mass resolving apparatus having a resolving aperture, in which the resolving aperture may be moved in the X and Z directions. Additionally, a controller is able to manipulate the mass analyzer and quadrupole lenses so that the crossover point of desired ions can also be moved in the X and Z directions. By manipulating the crossover point and the resolving aperture, the parameters of the ribbon ion beam may be manipulated to achieve a desired result. Movement of the crossover point in the X direction may affect the mean horizontal angle of the beamlets, while movement of the crossover point in the Z direction may affect the horizontal angular spread and beam current.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: June 29, 2021
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Robert C. Lindberg, Eric D. Hermanson, Frank Sinclair, Antonella Cucchetti, Randy Martin, Michael D. Johnson, Ana Samolov, Svetlana B. Radovanov
  • Patent number: 10983448
    Abstract: An objective lens protection device, objective lens system and lithographic device. The objective lens protection device includes a main structure provided with, oppositely disposed, an air supply unit and extraction unit. The air supply unit is used to output air. The extraction unit extracts air output by the air supply unit to form at least one layer of air curtain between the air supply unit and extraction unit. The objective lens protection device can effectively control the flow rate of wind discharge, controlling wind in a laminar flow state and ensuring uniform flow field of the air curtain, and can effectively block organic matters volatilized from the bottom up, eliminate opportunity for a direct contact of the organic matters with the lens, and prevent objective lens from contamination by the volatilization of the organic matters of photoresist, thus ensuring the imaging quality of the objective lens.
    Type: Grant
    Filed: July 23, 2018
    Date of Patent: April 20, 2021
    Assignee: Shanghai Micro Electronics Equipment (Group) Co., Ltd.
    Inventors: Xianming Li, Baotong Hao
  • Patent number: 10978303
    Abstract: Methods, systems and devices for using charged particle beams (CPBs) to write different die-specific, non-volatile, electronically readable data to different dies on a substrate. CPBs can fully write die-specific data within the chip interconnect structure during the device fabrication process, at high resolution and within a small area, allowing one or multiple usefully-sized values to be securely written to service device functions. CPBs can write die-specific data in areas readable or unreadable through a (or any) communications bus. Die-specific data can be used for, e.g.: encryption keys; communications addresses; manufacturing information (including die identification numbers); random number generator improvements; or single, nested, or compartmentalized security codes. Die-specific data and locations for writing die-specific data can be kept in encrypted form when not being written to the substrate to conditionally or permanently prevent any knowledge of said data and locations.
    Type: Grant
    Filed: May 1, 2019
    Date of Patent: April 13, 2021
    Inventors: Michael C. Smayling, David K. Lam
  • Patent number: 10978270
    Abstract: A charged particle beam device, comprising a charged particle source configured to emit a charged particle beam; a movable stage comprising an assembly of aperture arrays having at least a first aperture array and a second aperture array, the movable stage is configured to align the assembly of aperture arrays with the charged particle beam, and at least one aperture array comprises a shielding tube coupled to the movable stage.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: April 13, 2021
    Assignee: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH
    Inventors: Dieter Winkler, Thomas Jasinski
  • Patent number: 10969370
    Abstract: An example method of characterizing a semiconductor sample includes measuring an initial value, Vin, of a surface potential at a region of a surface of the semiconductor sample, biasing the semiconductor sample to have a target surface potential value (V0) of 2V or less, and depositing a monitored amount of corona charge (?Q1) on the region of the surface after adjusting the surface potential to the target value. The method also includes measuring a first value, V1, of the surface potential at the region after depositing the corona charge, determining the first change of surface potential (?V1=V1?V0), and determining the first capacitance value C1=?Q1/?V1, and characterizing the semiconductor sample based on V0, V1, ?V1, ?Q1 and C1.
    Type: Grant
    Filed: June 5, 2015
    Date of Patent: April 6, 2021
    Assignee: SEMILAB Semiconductor Physics Laboratory Co., Ltd.
    Inventors: Jacek Lagowski, Marshall Wilson, Alexandre Savtchouk, Carlos Almeida, Csaba Buday
  • Patent number: 10964560
    Abstract: Provided are a substrate chuck and a substrate bonding system including the substrate chuck. The substrate bonding system includes a lower substrate chuck and an upper substrate chuck disposed on the lower substrate chuck. The lower substrate chuck has a non-flat lower substrate contact surface, and the upper substrate chuck has a flat upper substrate contact surface.
    Type: Grant
    Filed: July 6, 2016
    Date of Patent: March 30, 2021
    Inventors: Youngbin Choi, Heebok Kang
  • Patent number: 10937559
    Abstract: A micro device transferring apparatus and a micro device transferring method are provided. The micro device transferring apparatus for moving a micro device fixed on an original substrate to a target substrate includes: a stripper on a side of the original substrate away from the micro device, configured to strip the micro device off the original substrate, and an optical tweezer configured to tweeze the micro device from a side of the original substrate provided with the micro device, wherein an accommodating space for accommodating the micro device and the original substrate is between the stripper and the optical tweezer.
    Type: Grant
    Filed: August 28, 2019
    Date of Patent: March 2, 2021
    Assignee: BOE TECHNOLOGY GROUP CO., LTD
    Inventors: Fei Wang, Huijuan Wang, Wanxian Xu, Xuan Liang, Meili Wang
  • Patent number: 10935636
    Abstract: A laser scanner comprises a distance measuring component for measuring a distance to a measuring point, a frame unit which horizontally rotates, a scanning mirror which scans a distance measuring light by rotating vertically, angle detecting components for detecting a horizontal angle of the frame unit and a vertical angle of the scanning mirror and an arithmetic control component, wherein the arithmetic control component sets a distance between measuring points adjacent in a radial direction as a first distance between measuring points, sets a distance between measuring points adjacent in a circumferential direction as a second distance between measuring points, calculates a first interval of measuring angles which becomes the first distance between measuring points and a second interval of measuring angles which becomes the second distance between measuring points at a measuring point and acquires point cloud data of a plane to be measured based on the first interval of measuring angles and the second inter
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: March 2, 2021
    Assignee: TOPCON Corporation
    Inventor: Ken-ichiro Yoshino
  • Patent number: 10923617
    Abstract: The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.
    Type: Grant
    Filed: June 21, 2011
    Date of Patent: February 16, 2021
    Assignee: MICROLINK DEVICES, INC.
    Inventors: Noren Pan, Glen Hillier, Duy Phach Vu, Rao Tatavarti, Christopher Youtsey, David McCallum, Genevieve Martin
  • Patent number: 10914944
    Abstract: A system comprises a plurality of laser generators, each generating a coherent beam, the plurality of laser generators arranged such that at least two of the generated coherent beams intersect with each other. The system further comprises an anti-refraction prism. The anti-refraction prism has a plurality of incident surfaces. The anti-refraction prism also has an egress surface facing a photosensitive film layer, with the coherent beams interfering within the anti-refraction prism and exiting at the egress surface to create an interference exposure pattern at an exposure region of the photosensitive film layer. Furthermore, the anti-refraction prism has a refraction index within a threshold range of the refraction index of the photosensitive film layer, and wherein the anti-refraction prism reduces a change in angle of each coherent beam in the photosensitive film layer due to refraction.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: February 9, 2021
    Assignee: Facebook Technologies, LLC
    Inventors: Matthieu Charles Raoul Leibovici, Matthew E. Colburn
  • Patent number: 10877190
    Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a chamber and the chamber encloses an EUV collector mirror. The EUV collector mirror is configured to collect and direct EUV radiation generated in the chamber and at least three exhaust ports are configured to remove debris from the chamber. In some embodiments, the exhaust ports are symmetrically arranged in a plane perpendicular to an optical axis of the collector mirror. In some embodiments, three exhaust ports are disposed such that an angle between any two adjacent ports is 120 degrees. In some embodiments, four exhaust ports are disposed such that an angle between any two adjacent ports is 90 degrees. In some embodiments, the chamber is configured to maintain a pressure in a range from 0.1 mbar to 10 mbar.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi Yang, Sheng-Ta Lin, Jen-Yang Chung, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 10871720
    Abstract: In embodiments of the present disclosure, a vibrator is used to generate a vibration wave with a variable frequency that can agitate and facilitate the circulation of the processing fluids, thereby enhancing the uniformity and efficiency of the resulting semiconductor device features, the vibrator may be a piezoelectric vibrator or other similar vibrators. In some embodiments, the vibration of the processing fluids can facilitate the processing fluids in circulating in and out of narrow channels or features, or the vibration of the processing fluids can facilitate the bubbling out of the microbubbles entrapped in the processing liquid or entrapped between the surface of the semiconductor wafer and the processing liquid. In another embodiment, the vibrations generated by the vibrator have vibration waves with a variable frequency to avoid resonance that may damage the semiconductor wafer and the features thereon.
    Type: Grant
    Filed: October 2, 2014
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Astha Sharma, Chia-Hung Lai, Hsin-Kuo Chang, Jaw-Lih Shih, Hong-Hsing Chou
  • Patent number: 10866521
    Abstract: An exposure apparatus includes: a first light source that generates first exposure light, a diaphragm having plurality of openings positioned between the first light source and an exposure photomask, a plurality of first projection optical systems that individually project an optical image realized by the first exposure light transmitted through each of the plurality of openings on an exposure target, a second light source that generates second exposure light, and a correction stepper. The correction stepper irradiates a light amount correction region with the second exposure light so as to limit an irradiation range of the exposure target to be irradiated with the second exposure light transmitted through the exposure photomask, and the light amount correction region is a region extending in a first direction by a width of a multi-opening region in a second direction in a plan view.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: December 15, 2020
    Assignee: TOPPAN PRINTING CO.. LTD.
    Inventors: Akihito Okumura, Yoshinori Motoda, Hiroaki Miyaji
  • Patent number: 10854421
    Abstract: A charged particle beam system includes a charged particle source, an extraction electrode, a suppressor electrode, a first variable voltage supply for biasing the extraction electrode with an extraction voltage and a second variable voltage supply for biasing the suppressor electrode with a suppressor voltage.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: December 1, 2020
    Assignees: Carl Zeiss Microscopy GmbH, Carl Zeiss Microscopy Ltd.
    Inventors: Daniela Donhauser, Christian Mueller, Barry Chamley, Tobias Volkenandt, Dirk Preikszas, Giuseppe Pavia, Heiko Stegmann
  • Patent number: 10854423
    Abstract: A multi-beam particle beam system includes a multi-aperture plate having a multiplicity of apertures. During operation, one particle beam of the plurality of particle beams passes through each of the apertures. A multiplicity of electrodes are insulated from the second multi-aperture plate to influence the particle beam passing through the aperture. A voltage supply system for the electrodes includes: a signal a generator to generate a serial sequence of digital signals; a D/A converter to convert the digital signals into a sequence of voltages between an output of the D/A converter and the multi-aperture plate; and a controllable changeover system, which feeds the sequence of voltages successively to different electrodes.
    Type: Grant
    Filed: February 15, 2019
    Date of Patent: December 1, 2020
    Assignee: Carl Zeiss MultiSEM GmbH
    Inventors: Yanko Sarov, Jan Horn, Ulrich Bihr, Christof Riedesel, Erik Essers
  • Patent number: 10840055
    Abstract: A high-brightness electron beam source is disclosed. The electron beam source may include a broadband illumination source configured to generate broadband illumination. A tunable spectral filter may be configured to filter the broadband illumination to provide filtered illumination having an excitation spectrum. The electron beam source may further include a photocathode configured to emit one or more electron beams in response to the filtered illumination, wherein emission from the photocathode is adjustable based on the excitation spectrum of the filtered illumination from the tunable spectral filter.
    Type: Grant
    Filed: January 16, 2019
    Date of Patent: November 17, 2020
    Assignee: KLA Corporation
    Inventors: Gildardo Delgado, Katerina Ioakeimidi, Frances A. Hill, Rudy F. Garcia, Mike Romero, Zefram Marks, Gary V. Lopez Lopez
  • Patent number: 10832888
    Abstract: There is provided an ion milling apparatus and sample holder permitting one to observe a sample, which has been milled, with an electron microscope without transferring the sample to a different holding member. The ion milling apparatus has an ion source, a sample holder, and a sample stage. The sample holder includes: a holder body having a sample holding portion for holding the sample; and a cover member detachably mounted to the holder body and hermetically sealing the sample held on the sample holding portion. The holder body has a shield plate and a field-correcting plate for correcting electric fields around the sample held on the sample holding portion.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: November 10, 2020
    Assignee: JEOL Ltd.
    Inventors: Shogo Kataoka, Toru Kagawa
  • Patent number: 10824083
    Abstract: A light source for extreme ultraviolet (EUV) radiation is provided. The light source includes a target droplet generator, a laser generator, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to a source vessel. The laser generator is configured to provide a plurality of first laser pulses according to a control signal to irradiate the target droplets in the source vessel, so as to generate plasma as the EUV radiation. The measuring device is configured to measure process parameters including temperature of the source vessel, droplet positions of the target droplets, and beam sizes and focal points of the first laser pulses. The controller is configured to provide the control signal according to at least two of the process parameters.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: November 3, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi Yang, Ssu-Yu Chen, Shang-Chieh Chien, Chieh Hsieh, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 10822230
    Abstract: Systems, methods and tools for the synthesis of products via mechanosynthesis are disclosed, including a set of atomically-precise tips and associated reactions, methods for determining build sequences for workpieces, exemplary build sequences, and methods for creating new reactions, build sequences, and tips.
    Type: Grant
    Filed: April 16, 2019
    Date of Patent: November 3, 2020
    Assignee: CBN Nano Technologies Inc.
    Inventors: Robert A. Freitas, Jr., Ralph C. Merkle
  • Patent number: 10801992
    Abstract: Ion mobility spectrometers and drift tubes including an inlet configured to receive ions, and an outlet, and an internal portion having a pressure at about atmospheric pressure, wherein the drift tube is configured to separate ions using a convective velocity from a carrier gas that transports the ions from the inlet to the outlet, a second controllable velocity that alters a migration of the ions from the inlet to the outlet, and neither radio frequency (RF) nor an alternating current (AC) center the ions are disclosed. Methods of separating charged particles are also disclosed.
    Type: Grant
    Filed: October 19, 2017
    Date of Patent: October 13, 2020
    Assignee: Indiana University Research and Technology Corporation
    Inventor: Carlos Larriba-Andaluz
  • Patent number: 10796428
    Abstract: Disclosed are an inspection system and an inspection method of performing image processing on an outline of an inspection object according to whether the inspection object is good or defective, and overlapping and displaying the image-processed outline with reference information for determining whether the inspection object is good or defective. The inspection system includes: a data acquisition unit configured acquire an image of an inspection object by irradiate light on the inspection object; a processing unit configured to detect an outline of the inspection object based on the image data of the inspection object; and an output unit configured to overlap and display the outline with reference information, wherein the processing unit is configured to determine whether the outline is good or defective based on the reference information to perform image processing on the outline according to whether the outline is good or defective.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: October 6, 2020
    Assignee: KOH YOUNG TECHNOLOGY INC.
    Inventors: Seung Ae Seo, Won Mi Ahn, Hye In Lee, Jong Hui Lee