Abstract: Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result.

Abstract: Particles in a glass substrate are measured by executing following steps: sequentially conveying a plurality of glass substrates; scanning with a camera a unit area of a glass substrate in a direction of a travel path of the glass substrate and storing particle information thereof; shifting the camera to a position corresponding to a next unit area for a succeeding glass substrate; storing information on the particles in the unit area of the succeeding glass substrate obtained by scanning the glass substrate; estimating whether a sum of the respective scanned unit areas is within an allowed limit of an area of a glass substrate; and returning to the third step if an answer from the fifth step is “No” or storing information on the particles in the entire glass substrate if the answer is “Yes”.

Abstract: An apparatus for optically inspecting particles and/or defects correlates sizes of particles and/or defects to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.

Abstract: An apparatus for evaluating a fiber web running in a card includes a camera for scanning the fiber web along a length and width portion thereof to detect useful fibers and empty locations in the fiber web and to generate signals representing the useful fibers and empty locations; and an evaluating device connected to the camera for determining a distribution of useful fibers per area unit in the fiber web from the signals.

Abstract: In a method and a device for identifying foreign bodies in a base textile material, the base textile material is subjected to beams and the beams reflected on the base material are detected and converted into an electrical signal. In order to detect foreign bodies in the material in a targeted manner and to differentiate them from each other, so all or only the unwanted foreign bodies can be, for example, eliminated, the beams have two defined and different wavelength ranges and the reflected beams are simultaneously and jointly detected from the two wavelength ranges. Preferably, a first defined wavelength range can be selected in such a way that the beams reflected on the base material provide random values in the electrical signal, for at least two different foreign bodies, and another defined wavelength range for the beams is selected in such a way that the reflected beams provide an electrical signal for the two foreign bodies, in a different ratio from the first wavelength range.

Abstract: The system has a single pulse spectrum capability for sensing the presence of contamination on a surface to be interrogated. The system includes a narrow frequency bandwidth visible pulse and broadband infrared pulse that are directed to the surface. An output wavelength discriminator receives the reflected sum-frequency that is generated. The output wavelength discriminator is substantially non-transmissive at the frequencies of the visible pulse and the infrared pulse, but is substantially transmissive at the sum-frequency of the visible pulse and the infrared pulse. The output of the wavelength discriminator is a broadband output. A frequency disperser receives the output of the wavelength discriminator and provides a physical separation of output wavelengths of the broadband output. A multi-channel analyzer analyzes the intensity of the physically separated output wavelengths as a function of their physical positions.

Abstract: A method and apparatus for characterizing pixels in an image of an object surface by providing at least two images of the surface wherein each pixel has a unique location common to all of the images; comparing each pixel value at each location to an identification matrix; and identifying the region in which each pixel is located based on the comparison. The matrix can comprise a plurality of non-pixel values representing one or more regions, each of the regions defining at least one surface attribute. One embodiment provides at least two references images of a template using the same technique used to obtain each image of the surface, and creating the matrix using the reference images. Providing at least two images comprises providing a first and second image, wherein the surface is illuminated using a first and second source of illumination, or providing the first using a source of illumination and providing the second from the first.

Abstract: The present invention generally provides an apparatus and a method for inspecting a substrate in a processing system. In one aspect, a par of light sources is used in conjunction with an optical receiving device, such as a camera having a CCD, to illuminate and inspect a substrate for various optical signatures. The substrate signatures are then used to generate images of obstructions in three dimensions (3-D) for further analysis. In one embodiment, the substrate is scanned in two or more directions with a first light source and then scanned in two or more directions with a second light source. A receiver captures the reflected and/or scatted signals from sources comprising two or more different images. The light illumination from the first and second light sources impinges on substrate surface obstructions from two differing angles (i.e. perspectives).

Abstract: Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result.

Abstract: A deposit detector in which deposit on a detection surface has a surface shape effect, and generation of a flashing phenomenon caused by irregular reflection of the light incident on the deposit from the outside is estimated. In a deposit detection mode, light emitted from a light source (10) for total reflection and total-reflected from the detection surface is received by a light-receiving element unit (50). Each element is disposed at such an angle that the light undergoes total reflection when no deposit is present or the condition of total reflection is not satisfied when deposit is present. Further, in a light-scattering deposit detection mode, light emitted from a scattering light source (20) and scattered by the detection surface is received by the light-receiving element unit (50). In an extraneous light quantity increase detection mode, extraneous light is received by the light-receiving element unit (50).

Abstract: A method and apparatus for inspecting a surface of a semiconductor wafer having repetitive patterns for contaminant particles using scattered light which involves directing two beams of light at different approach angles onto the surface in a manner so as to illuminate two intersecting stripe shaped regions on the surface. An imaging lens collects scattered light from the surface as the semiconductor wafer is moving and then images the scattered light collected onto a CCD camera having a square array sensor and arranged to operate in a time delayed integration (TDI) mode. The field of view of the CCD camera is centered at the intersection of the two striped regions. Each light beam striking the surface produces a Fourier diffraction pattern of scattered light in the back focal plane of the imaging lens. In setting up the apparatus, the angle of incidence of one of the light beams is adjusted to shift one of the diffraction patterns, if necessary, so that it overlaps the other diffraction pattern.

Abstract: An imaging system for detecting defects on a substrate. Sensor module ports are disposed on an imaging platform. Sensor modules are removably connected to the sensor module ports, and are adapted to sense swaths on the surface of the substrate. Each of the sensor modules includes a time domain integration sensor, optics, an analog controller, and a digital controller. The time domain integration sensor optically senses the swath. The optics focus light from the swath on the time domain integration sensor. The analog controller receives signals from the time domain integration sensor and provides data signals. The digital controller receives the data signals, integrates the data signals into an image of the swath, and provides the image as digital signals to the sensor module port. A master controller receives the digital signals, composites them into a single image of a desired portion of the surface of the substrate, and detects defects within the image.

Abstract: According to the present invention, there is disclosed a defect detection apparatus comprising an illuminating unit which irradiates an inspection object with illuminating light, and an image pickup unit which picks up an image of diffracted light from the inspection object to perform defect inspection of the inspection object from image data picked up by the image pickup unit, the apparatus further comprising a diffraction angle calculation unit to obtain the diffraction angle of the illuminating light with respect to the inspection object, which is optimum for picking up the image of the diffracted light, based on design information of the inspection object, and an illuminating setting unit which sets the angle of incidence of the illuminating unit to the diffraction angle calculated by the diffraction angle calculation unit.

Abstract: Yarn impurities are detectable by a method and device wherein a first diameterdependent signal is obtained in a first measurement of a linearly traveling yarn, the intensity of the light for a second measurement is set as a function of the first signal to compensate for the effect of the yarn diameter on the light reflected by the yarn and then the second electrical signal can be directly evaluated for detecting yarn impurities. The invention improves the detection of impurities, for example in connection with spinning and bobbin winding machines.

Abstract: Apparatus for semiconductor device fabrication, includes at least one lithography station, which is adapted to project a pattern of radiation from a mask onto a semiconductor wafer. A mask cleaning station is adapted to receive the mask from the at least one lithography station, to clean the mask so as to remove a contaminant therefrom, and so that the cleaned mask may be returned to the at least one lithography station. A robot is adapted to convey the mask between the at least one lithography station and the mask cleaning station. An enclosure contains the at least one lithography station, the mask cleaning station and the robot, so that the mask is conveyed between the at least one lithography station and the mask cleaning station without human contact and without exposure to ambient air.

Abstract: When performing a defect inspection of a wafer W, defect observation equipment 3 first inputs defect position data from defect detection equipment 2. After a plurality of measurement points are set, the amount of position shift between the detection coordinate system and the observation coordinate system is measured for each measurement point. Then, the defect observation equipment 3 creates a first-order defect position correction formula in order to make reasonable the defect position in the detection coordinate system, based on the position shift amounts of the measurement points. This first-order defect position correction formula has three terms, for the offset component, the magnification component, and the rotation component of the observation coordinate system with respect to the detection coordinate system. Next, using the defect position correction formula, a defect position detected by the defect detection equipment 2 is corrected.

Abstract: A light integrator produces diffuse illumination from a beam of light wherein image artifacts due to debris within the integrator are suppressed. The light integrator includes an integrator block having an elongated cylindrical light integrating cavity enclosed by end walls and a longitudinal cylindrical chamber wall having a diffusely reflecting interior surface The chamber wall includes a longitudinally extending output slit for emitting light from the cavity. A dust-free zone exists within the cavity in the shape of a sector of a circle within which contaminants cannot come to rest without producing visible artifacts, wherein the origin of the sector is located at or nearby a plane of the original. An elongated light pipe extends into the cavity through one of the end walls, where the light pipe has an input port at one end thereof for introducing the beam of light and a treatment along its length for emitting light entering its port into the cavity.

Abstract: A method and an apparatus are described for the optical examination of structured surfaces of objects, especially of wafers and/or masks. The optical apparatus has an observation beam path (6) whose central axis (42) is directed vertically against the surface of the object (16), an illumination beam (2) whose central ray (40) falls vertically on the surface of the object, and an illumination beam (3) whose central ray (41) falls obliquely onto the surface of the object (16). In the observation beam path (6) the image of the surface of the object (6) is observed and/or detected. In the observation beam path (6) a filter device (38) and/or detector device (18) is disposed. The optical system has an illumination device (39) for the simultaneous production of a dark field illumination, a device for the coding (11) of the illumination beams (2, 3) being associated with the bright field (2) and/or the dark field illumination beam (3).

Abstract: A defect inspecting apparatus for inspecting a defect of an object having a periodic pattern includes: a dark field illumination optical system that illuminates the object with substantially parallel illumination light in a direction having a predetermined first inclined angle relative to an inspection surface of the object; an imaging optical system having an imaging element for imaging the object illuminated with the illumination light, the imaging element having an imaging lens; and a defect detecting system for detecting the defect based on image data of the object thus imaged. A mutual positional relation ship between the direction of illumination by the illumination optical system and a direction of imaging by the imaging optical system is determined based on a diffraction angle defined by a period of the pattern and a wavelength of the illumination light.

Abstract: A method and apparatus for inspecting a surface of a semiconductor wafer having repetitive patterns for contaminant particles using scattered light by illuminating an area on the surface with two beams of light at different approach angles which are independent from each other and then imaging the area illuminated onto a camera positioned above the surface using an imaging lens. Each light beam striking the surface of the semiconductor wafer produces a Fourier diffraction pattern of light scattered from the surface in the back focal plane of the imaging lens. The two diffraction patterns are offset from each other if the two approach angles are not symmetrically disposed relative to an axis of the wafer. In setting up the apparatus, the angle of incidence of one of the beams is adjusted to shift one of the diffraction patterns, if necessary, so that it overlaps the other diffraction pattern.

Abstract: An inspection tool or inspection system can be utilized to determine whether the appropriate pattern is on a reticle. The reticle can be associated with EUV lithographic tools. The system utilizes at least two wavelengths of light. The light is directed to the reticle at the at least two wavelengths of light and detected by a detector. The image associated with the first wavelength is subtracted from or otherwise processed with respect to the image associated with the second wavelength to improve contrast ratio.

Abstract: A holographic scatterometer with continuous readout can rapidly identify the presence of deposits (particles or other defects) on an unpatterned wafer surface and determine the volume density (size) and location. The scatterometer can also determine chemical composition of the detected deposits. The range of the deposit (particle) size to be measured is below 80 nm, which currently existing scatterometer type instruments cannot readily detect. The inspection can be achieved as an in-line stage during the processing of wafers or in situ in combination with another processing tool or as a separate off-line analysis device.

Abstract: An appearance inspection method, and an-apparatus therefor, capable of acquiring high quality in-focus images throughout the entire zone of an inspection object, by acquiring simultaneously two images on different focal planes by.using two TDI cameras (23, 24) having a sensitivity in a respective wavelength band (&lgr;1,&lgr;2), slicing the images in accordance with a region division that is defined in advance, and comparing the images. According to another aspect of this invention, the images are acquired by a confocal microscope constituted by disposing two corresponding pin-holes (37, 38), on the illumination side of a microscope and its light reception side, and one TDI camera (40).

Abstract: Cleaning of optical components for use in a lithographic projection apparatus can be carried out by irradiating a space within the apparatus containing the optical component with UV or EUV radiation having a wavelength of less than 250 nm, in the presence of an oxygen-containing species selected from water, nitrogen oxide and oxygen-containing hydrocarbons. Generally, the space will be purged with an ozone-less purge gas which contains a small amount of the oxygen-containing species in addition to the usual purge gas composition. The technique can also be used in an evacuated space by introducing a low pressure of the oxygen-containing species into the space.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, overlay and flatness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a presence of macro defects and overlay of a specimen. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, at least one characteristic of defects on at least two sides of a specimen. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, an adhesion characteristic and a thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, critical dimension, a presence of defects, and a thin film characteristic. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Abstract: Contaminant particles travelling with a projection beam in a lithographic projection apparatus are ionized. A purge gas may be attracted towards getter plates provided upstream of the purge gas supply. A magnetic field traps electrons generated by the ionizer to improve the ionization of the purge gas. The contaminant particles can be ionized by generating a plasma in a tube having a greater length than width.

Abstract: A method and apparatus are described for removing an initial gas from a gas-filled enclosure between the mask-protective device, such as a pellicle, and the patterned mask, such as a reticle, and adding a purge gas with a different composition. The gas-filled enclosure includes a vent for adding the purge gas to the chamber and removing the initial gas from the chamber. Adding and removing may be accomplished by using pressure, diffusion, vacuum, or other means.

Abstract: In an inspection method for a transparent object, a transparent object is irradiated with light from a light source, and the surface or interior of the transparent object is inspected by observing transmitted light on the side of the transparent object that is opposite to the light source. An inspection apparatus for a transparent object includes a transparent-object-moving unit, an irradiation unit, and a detection unit. The transparent-object-moving unit moves a transparent object to an inspection position and fixes the transparent object in the inspection position. The irradiation unit emits light from a light source disposed on one side of the transparent object so as to irradiate light onto the transparent object fixed in the inspection position by the transparent-object-moving unit. The detection unit is located on the side of the transparent object opposite the light source and has a detector for detecting light that has been emitted from the light source and has passed through the transparent object.

Abstract: The unit for inspecting a surface is to detect a flaw on a specular surface of an object to be inspected with accuracy. The unit is so arranged that light 1a is irradiated from a point light source or close to a point light source 4, the light 1a is refracted by a Fresnel lens 5 so as to converge in a condition of being close to parallel, the refracted light 1a is reflected by a half mirror 6, the light 1a is irradiated on generally whole area of the specular surface 2 to be inspected and the reflected light 1a is introduced into an image capturing means 10 provided at a position where the light 1a converges.