Abstract: A valve gate may include a threaded rod, a nut engaged with the threaded rod, a movable body mounted on the threaded rod, a seal, a pair of levers, and first and second housing components that at least partially enclose the other components. The threaded rod can be turned to drive translation of the nut and the movable body along the threaded rod. Translation of the movable body along the threaded rod can drive rotation of the levers outward away from the threaded rod, and rotation of the levers can force the seal to expand outward from the threaded rod. Such expansion can force the seal into engagement with an inner surface of a pipeline.

Abstract: According to one embodiment, a magnetic memory device includes a first conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a second conductive layer, a third magnetic layer, a second nonmagnetic layer, a fourth magnetic layer provided, a first compound region, and a first insulating region. The first compound region includes the first metal and at least one selected from the group consisting of oxygen, nitrogen, and fluorine. At least a portion of the first compound region is provided between the first conductive layer and the second conductive layer. The first insulating region includes at least one selected from the group consisting of Al and Si and at least one selected from the group consisting of oxygen, nitrogen, and fluorine. At least a portion of the first insulating region is provided between the first magnetic layer and the third magnetic layer.

Abstract: An expanding gate valve having a valve body defining a valve chamber and flow passages and having spaced sealing surfaces. Gate members are moveable within the valve body between open and closed positions and at the closed position having sealing engagement with the spaced sealing surfaces. A wedge member is positioned between the gate members and has at least one tapered surface having reacting engagement with a tapered surface of one of the gate members so that relative linear movement of the gate member relative to the tapered surface of the wedge member develops a lateral gate expansion force causing expansion of the gate members for tight sealing engagement with the spaced sealing surfaces.

Abstract: A vacuum valve comprises a valve housing which has an inlet opening and an outlet opening penetrating opposite walls of the valve housing, a valve seat surrounding the inlet opening, and a closure unit which is arranged in an interior space of the valve housing and which has a valve plate which is adjustable between an open position in which it releases the inlet opening, an intermediate position in which it covers the inlet opening but is lifted from the valve seat, and a closed position in which it covers the inlet opening and is pressed against the valve seat, and at least one adjusting piston which is arranged in an interior space of the closure unit and, for the purpose of adjusting the valve plate between its intermediate position and its closed position, is displaceable in direction of its longitudinal center axis between a passive position in which the valve plate is in its intermediate position and an active position in which the valve plate is in its closed position.

Abstract: A self-identifying integrated circuit contains a primary function circuit and an immutable, unique identification code, which is presented at an output port thereof upon demand by, an external circuit. The unique identification code may be an N bit digital number or may be a response signal to an interrogating excitation signal. The circuitry to store the unique identification code is fabricated on a microscopic scale such as by a direct-write laser forward transfer of material process or by a laser ablation of select material process. The identification storage means may be disposed on a package substrate or on an integrated circuit die and is permanently encased within the integrated circuit package so as to be protected from alteration by external means.

Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

Abstract: A magnetic memory device includes a first wiring layer which runs in the first direction, a memory element which is arranged above the first wiring layer, second wiring layers which are arranged on the memory element and run in a second direction different from the first direction, and a first magnetic shield layer which is formed on the side surface of each second wiring layer and formed around the side surface of the memory element.

Abstract: An electro-optical device having high operation performance and reliability, and a manufacturing method thereof. A TFT structure which is strong agains hot carrier injection is realized by disposing a Lov region 207 in an n-channel TFT 203 which forms a driver circuit. Further, Loff regions 217 to 220 and offset region are disposed in an n-channel TFT 304 which forms a pixel section, and a TFT structure of low OFF current value is realized. Further, by reducing the n-type impurity element contained in Loff regions 217 to 220 to approximately 1×1016 to 5×1018 atoms/cm3, further reduction of OFF current can be performed.

Abstract: A semiconductor memory device having a word line enable sensing block for driving sense amplifiers only when a word line is enabled. In this way, an enable time point of the sense amplifiers is controlled according to variations in operating conditions such as a temperature, process, voltage and size of a memory cell. In addition, the semiconductor memory device can embody an embedded memory logic.

Abstract: A flow rate regulator includes a first cylindrical member, a second cylindrical member and a disc-shaped member to regulate, the flow rate of liquid flowing through a transfusion unit. The liquid is introduced into the second cylindrical member via an inlet port. It flows through the disc-shaped member via a through hole and flows further along a peripherally extending groove in the first cylindrical member. Then, it is discharged from the first cylindrical member via an outlet port after the flow rate is regulated as required. The disc-shaped member is fitted in the second cylindrical member so as not to be rotated relative to the latter, and the sub-assembly is then fitted into the first cylindrical member. The peripherally extending groove is so designed that its cross-sectional area is gradually varied on the bottom portion of the first cylindrical member. The through hole in the disc-shaped member is communicated with the peripherally extending groove.

Abstract: A high pressure shut-off valve has a hollow valve body with an open end, closed end and a cylindrical cavity with a cover. Aligned inlet and outlet portions form a straight bore intersecting the valve cavity. A plug valve assembly has a supporting mandrel reciprocally slidable to a position abutting the valve cavity closed end, with an end portion having a transverse valve passage and an intermediate portion for closing the valve body bore, the valve passage being aligned with the bore when retracted. An elastomeric sealing sleeve member on the mandrel seals the cavity wall around the bore when the valve is closed. A mon-rising threaded stem, operated by a hand wheel, moves the valve assembly and has a lost motion connection operable on overtravel to compress the sleeve member longitudinally along the mandrel. Metal discs supported integrally on a supporting sleeve fill holes in the sleeve member to prevent extrusion of the sleeve into the bore.