Abstract: The present invention discloses a multiphase ceramic material with a giant dielectric constant, wherein the multiphase ceramic material has a general formula of AxBnxTi1?(n+1)xO2; wherein A is at least one selected from the group consisting of Nb, Ta, V, Mo, and Sb, B is at least one selected from the group consisting of In, Ga, Al, Co, Cr, Sc, Fe (III), and a trivalent rare-earth cation; n is a molar ratio of B to A, 1<n?5, 0<x?0.1. The multiphase ceramic material possesses outstanding properties including a giant dielectric constant, a low dielectric loss, and excellent frequency- and temperature-stability. In particular, it exhibits a high insulation resistivity of higher than 1011?·cm and a high breakdown voltage, which implies it can be applied in high-energy storage devices and supercapacitors. This invention also provides a method to synthesize the multiphase ceramic material.

Abstract: A compound containing Sn, Te and Mn, and further containing either one or both of Sb and Bi.

Abstract: Systems and methods are provided for mechanical pretreatment of bipolar plates, for example, for plating electrodes in redox flow batteries. In one example, a method for disrupting surfaces of a bipolar plate may include pressing the bipolar plate between imprint plates, and removing the pressed bipolar plate from the imprint plates prior to use in a redox flow battery. In some examples, the pressed bipolar plate may include negative indentations from at least one of the imprint plates. In some examples, the imprint plates may be patterned meshes, such that the negative indentations may include patterns of asymmetric protrusions. In this way, the bipolar plate may be pretreated via pressing so as to reduce wear to manufacturing equipment (relative to other mechanical pretreatment processes, for example) while maintaining electrochemical performance of the redox flow battery.

Abstract: An alloy is provided that consists essentially of (TixTayVzAcNb1-x-y-z-c)(Fe1-dMnd)a(Sb1-eSne)b, wherein 0.06?x?0.24, 0.01?y?0.06, 0/08?z?0.4, 0.9?(a, b)?1.1, 0?c?0.05, 0?d?0.05 and 0?e?0.1 and A is one or more of the elements in the group consisting of Zr, Hf, Sc, Y, La, and up to 5 atom % impurities.

Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

Abstract: The present application describes a process for the preparation of titanium-based compounds having an anatase type structure with cationic vacancies arising from a partial substitution of oxygen atoms by fluorine atoms and hydroxyl groups. Electrochemically active materials comprising the titanium-based compounds for use in lithium-ion battery electrodes are also described.

Abstract: Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method for making the same in a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, phase change layers, and sensor devices.

Abstract: The present application provides vanadium dioxide doped with Ti, or vanadium dioxide further doped with other atoms selected from the group of W, Ta, Mo, and Nb. The vanadium dioxide of the present application is excellent in moisture resistance and in which deterioration of endothermic characteristics due to moisture is suppressed.

Abstract: A multilayer ceramic capacitor includes a laminated body and first and second external electrodes respectively on both end surfaces of the laminated body. When regions where first internal electrodes or second internal electrodes are not present are regarded as side margin portions in a cross section of the laminated body as viewed from the laminating direction, the side margin portions include multiple side margin layers, and the content of Si in the side margin layer closest to the internal electrode is lower than that in the side margin layer other than the side margin layer closest to the internal electrode.

Abstract: A multilayer ceramic capacitor includes a laminated body and first and second external electrodes respectively on both end surfaces of the laminated body. When regions where first internal electrodes or second internal electrodes are not present are regarded as side margin portions in a cross section of the laminated body as viewed from the laminating direction, the side margin portions include multiple side margin layers, and the content of Si in the side margin layer closest to the internal electrode is lower than that in the side margin layer other than the side margin layer closest to the internal electrode.

Abstract: A thin film gas sensor device includes a substrate, a nanostructured thin film layer, and a first and a second electrode. The nanostructured thin film layer is supported by the substrate and is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo an increase in a density of the holes in the presence of a target gas, thereby decreasing an electrical resistance of the nanostructured thin film layer. The first and the second electrodes are supported by the substrate and are operably connected to the nanostructured thin film layer, such that the decrease in electrical resistance can be detected.

Abstract: A chemical vapor deposition process for depositing a titanium oxide coating is provided. The chemical vapor deposition process for depositing the titanium oxide coating includes providing a glass substrate. A gaseous mixture is formed. The gaseous mixture includes a titanium-containing compound and a fluorine-containing compound. The titanium-containing compound is an oxygen-containing compound or the gaseous mixture includes a first oxygen-containing compound. The gaseous mixture is directed toward and along the glass substrate. The mixture reacts over the glass substrate to form the titanium oxide coating thereon.

Abstract: The use of particles of at least one crystalline oxide, preferably metal oxide, having an average particle size of less than 500 nm and a fluorine content of between 0.5 and 30% by weight, preferably between 0.5 and 5%, even more preferably between 1.0 and 4%, for the preparation of solid-state electrolytes, is described. Also described is a solid-state electrolyte, containing particles of at least one crystalline oxide, preferably metal oxide, having an average particle size of less than 500 nm, preferably between 10 and 500 nm, even more preferably between 50 and 300 nm; a fluorine content as noted above; an alkali or alkaline-earth metal content of between 0.5 and 10% by weight, preferably between 0.5 and 5%, even more preferably between 1 and 4%. Furthermore an inorganic-organic hybrid electrolyte obtainable by means of reaction of the aforementioned solid-state electrolyte with ionic liquids is described.

Abstract: A touch panel is made by forming a routing and pad pattern group on a substrate to include first and second routing lines, first pad electrodes connected to the first routing line, and second pad electrodes connected to the second routing line, by using a first mask; forming a sensor electrode pattern group on the substrate having the routing and pad pattern group formed thereon to include first sensor electrodes formed in a first direction, second sensor electrodes formed in a second direction, and connection portions that each connects adjacent first sensor electrodes, by using a second mask; forming a first insulating layer to include contact holes to expose portions of the second sensor electrodes, respectively, by using a third mask; and forming bridges that each connects adjacent second sensor electrodes through the contact holes and a second insulating layer on the bridges, by using a fourth mask.

Abstract: The instant disclosure relates to a preparation method of ethanol reforming catalyst, comprising the following steps. The first step is mixing a first metal precursor, a second metal precursor, and a third metal precursor with an organic medium to form a mixture. The next step is adding a surfactant to the mixture, and then allowing resting for 3 to 7 days to form a colloidal gel. The next step is calcining the colloidal gel for 1 to 5 hours in a first temperature region of 350° C. to 550° C., and then calcining the colloidal gel for 1 to 5 hours in a second temperature region of 800° C. to 1000° C. to form an ethanol reforming catalyst. The instant disclosure further provides an ethanol reforming catalyst composition.

Abstract: Provided is a titanium target for sputtering having a Shore hardness Hs of 20 or more and a basal plane orientation ratio of 70% or less. In the titanium target for sputtering, the purity of titanium is 99.995 mass % or more, excluding gas components. It is an object of the present invention to provide a high-quality titanium target for sputtering, in which impurities are reduced, and which can prevent occurrence of cracking or breaking in high-power sputtering (high-rate sputtering), stabilize sputtering characteristics, and effectively suppress occurrence of particles during formation of a film.

Abstract: According to example embodiments, a conductive paste includes a conductive component that contains a conductive powder and a titanium (Ti)-based metallic glass. The titanium-based metallic glass has a supercooled liquid region of about 5K or more, a resistivity after crystallization that is less than a resistivity before crystallization by about 50% or more, and a weight increase by about 0.5 mg/cm2 or less after being heated in a process furnace at a firing temperature. According to example embodiments, an electronic device and a solar cell may include at least one electrode formed using the conductive paste according to example embodiments.

Abstract: Disclosed is an antibacterial composition comprising titanium oxide particles immobilized with an antibody having affinity and cognitive power to a microorganism of interest, and a method for sterilizing the microorganism by using the same. In particular, the present invention relates to a method for preparing functional titanium oxide particles capable of recognizing a microorganism or a virus of interest, and a method for selectively and efficiently sterilizing the same by using the functional titanium oxide particles, and not for randomly sterilizing microorganisms or viruses by using conventional titanium oxide particles having no recognition power to a microorganism or a virus of interest.

Abstract: Provided is a semiconductor ceramic composition that is a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO3-based oxide is substituted by Bi and A (in which A is at least one kind of Na, Li and K), the semiconductor ceramic composition having a region between a center portion and an outer shell portion within a crystal grain, in which when Bi concentration is measured in a radial direction within the crystal grain, the Bi concentration in the region is higher than both Bi concentration in the center portion and Bi concentration in the outer shell portion.

Abstract: Provided are a composite including a lithium titanium oxide and a bismuth titanium oxide, a method of manufacturing the composite, an anode active material including the composite, an anode including the anode active material, and a lithium secondary battery having improved cell performance by including the anode.

Abstract: A semiconductor ceramic composition which includes a compound represented by the following formula (1) as a main component, (Ba1-x-y-wBixAyREw)m(Ti1-zTMz)O3 (1) (wherein, A is at least one element selected from Na or K, RE is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er, TM is at least one element selected from the group consisting of V, Nb and Ta, w, x, y, z and m satisfy the following relationships of (2)˜(5), 0.007?x?0.125 (2), x<y?2.0x (3), 0?(w+z)?0.01 (4), 0.94?m?0.999 (5)). And the semiconductor ceramic composition includes Ca in a proportion of 0.01˜0.055 mol in terms of element relative to 1 mol of Ti sites.

Abstract: Provided are a metal nitride film for a thermistor, which has an excellent bending resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride film for a thermistor, which consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and the peak ratio of the diffraction peak intensity of a-axis orientation (100) relative to the diffraction peak intensity of c-axis orientation (002) (i.e., the diffraction peak intensity of a-axis orientation (100)/the diffraction peak intensity of c-axis orientation (002)) is 0.1 or lower in X-ray diffraction.

Abstract: Provided is a method for producing a lead-free, perovskite semiconductor ceramic composition which is capable of suppressing the temperature coefficient of resistance ? from becoming small, and obtaining stable characteristics. The method for producing a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO3-based oxide is substituted by Bi and A (in which A is at least one kind of Na, Li and K), the method including: calcining a raw material for forming the semiconductor ceramic composition at 700° C. to 1,300° C.; adding an oxide containing Ba and Ti, which becomes a liquid phase at 1,300° C. to 1,450° C., to the calcined raw material; forming the same; and then sintering at a temperature of 1,300° C. to 1,450° C.

Abstract: Provided are a metal nitride material for a thermistor, which has high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1-vAv)xAly(N1-wOw)z (where “M” represents at least one element selected from Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one element selected from Mn, Cu, Ni, Fe, and Co, which is different from the selected “M”, 0.0<v<1.0, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: Provided are a metal nitride material for a thermistor, which has high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1-wAw)xAlyNz (where “M” represents at least one element selected from Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one element selected from Mn, Cu, Ni, Fe, and Co, which is different from the selected “M”, 0.0<w<1.0, 0.70?y/(x+y)?0.98, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: Provided are a metal nitride material for a thermistor, which has a high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1-vAv)xAly (N1-wOw)z (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one of Sc, Zr, Mo, Nb, and W, 0.0<v<1.0, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAly(N1-wOw)z (where 0.70?y/(x+y)?0.95, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: The present invention is directed to perovskite nanostructures of Formula ABO3, wherein A and B represent one or more metals with A having a valence lower than B, to methods of making the perovskite nanostructures of Formula ABO3 comprising their synthesis within and precipitation from reverse micelles, and the use of the perovskite nanostructures of Formula ABO3 as capacitors, and their use in dynamic random access memory, electromechanics, and non-linear optics.

Abstract: The amount of lithium ions that can be received and released in and from a positive electrode active material is increased, and high capacity and high energy density of a secondary battery are achieved. Provided is a lithium-manganese composite oxide represented by LixMnyMzOw, where M is a metal element other than Li and Mn, or Si or P, and y, z, and w satisfy 0?x/(y+z)<2, y>0, z>0, 0.26?(y+z)/w<0.5, and 0.2<z/y<1.2. The lithium manganese composite oxide has high structural stability and high capacity.

Abstract: Embodiments of the invention generally provide hydrogen-doped and/or fluorine-doped transparent conducting oxide (TCO) materials and processes for forming such doped TCO materials. In one embodiment, a method for fabricating a doped TCO on a substrate surface includes forming a TCO material on a substrate, exposing the TCO material to a hydrogen plasma while forming a hydrogen-doped TCO material during an atmospheric pressure plasma (APP) process, wherein the hydrogen-doped TCO material contains atomic hydrogen at a concentration within a range from about 1 at % (atomic percent) to about 30 at %, and exposing the hydrogen-doped TCO material to a thermal annealing process. In another embodiment, the method includes exposing the TCO material to a fluorine plasma while forming a fluorine-doped TCO material during the APP process, wherein the fluorine-doped TCO material contains atomic fluorine at a concentration within a range from about 1 at % to about 30 at %.

Abstract: A superconducting article comprises a substrate, a buffer layer overlying the substrate, and a high-temperature superconducting (HTS) layer overlying the buffer layer. The HTS layer includes a plurality of nanorods. A method of forming a superconducting article comprises providing a substrate, depositing a buffer layer overlying the substrate; forming a nanodot array overlying the buffer layer; depositing an array of nanorods nucleated on the nanodot array; and depositing a high-temperature superconducting (HTS) layer around the array of nanorods and overlying the buffer layer.

Abstract: A new, more economical method for preparing titania pastes for use in more efficient dye-sensitized solar cells is disclosed. The titania pastes are prepared by mixing titania nanoparticles with a titania sol including a titanium precursor. The disclosed method enables the control of titania nanoparticle concentration and morphology in the titania paste and is economical due to the relatively low reaction temperatures. The performances of dye-sensitized solar cells prepared using the disclosed titania pastes are also disclosed.

Abstract: Provided is an iron-based superconducting material including an iron-based superconductor having a crystal structure of ThCr2Si2, and nanoparticles which are expressed by BaXO3 (X represents one, two, or more kinds of elements selected from a group consisting of Zr, Sn, Hf, and Ti) and have a particle size of 30 nm or less. The nanoparticles are dispersed in a volume density of 1×1021m?3 or more.

Abstract: A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.

Abstract: Novel anode materials including various compositions of vanadium-doped strontium titanate (SVT), and various compositions of vanadium- and sodium-doped strontium niobate (SNNV) for low- or intermediate-temperature solid oxide fuel cell (SOFCs). These materials offer high conductivity achievable at intermediate and low temperatures and can be used as the structural support of the SOFC anode and/or as the conductive phase of an anode. A method of making a low- or intermediate-temperature SOFC having an anode layer including SVT or SNNV is also provided.

Abstract: Provided are a mixed cathode active material having improved power characteristics and safety, and a lithium secondary battery including the same. More particularly, the present invention relates to a mixed cathode active material which may assist power in a low SOC range to widen an available state of charge (SOC) range and may simultaneously provide improved safety by blending substituted LFP, in which operating voltage is adjusted by substituting a portion of iron (Fe) with other elements such as titanium (Ti), in order to prevent a rapid increase in resistance of manganese (Mn)-rich having high capacity but low operating voltage in a low SOC range (e.g., a SOC range of 10% to 40%), and a lithium secondary battery including the mixed cathode active material.

Abstract: The paste composition for forming a back electrode of solar cell 10 provided by the present invention contains, as solids, an aluminum powder, a glass powder and a composite powder composed of a particulate composite of a metal oxide with a silicon-containing organic or inorganic compound. This composite powder is contained in an amount of at least 0.01 mass % but less than 0.45 mass % given 100 mass % as the total of the composite powder, the aluminum powder and the glass powder.

Abstract: A barium titanate semiconductor ceramic with positive resistance-temperature characteristics, which is represented by the general formula: BaTiO3, wherein a Ti site is partially substituted with Zr, and a content ratio of Zr falls within the range of 0.14 to 0.88 mol %, and a PTC thermistor using the same.

Abstract: The present invention relates to a process for the preparation of compounds of general formula (I) Lia-bM1bV2-cM2c(PO4)x??(I) wherein M1, M2, a, b, c and x have the following meanings: M1: Na, K, Rb and/or Cs, M2: Ti, Zr, Nb, Cr, Mn, Fe, Co, Ni, Al, Mg and/or Sc, a: 1.5-4.5, b: 0-0.6, c: 0-1.98 and x: number to equalize the charge of Li and V and M1 and/or M2, if present, wherein a-b is >0, to a compound according to general formula (I) as defined above, to spherical agglomerates and/or particles comprising at least one compound of general formula (I) as defined above, to the use of such a compound for the preparation of a cathode of a lithium ion battery or an electrochemical cell, and to a cathode for a lithium ion battery, comprising at least one compound as defined above.

Abstract: The present invention relates to a process for the preparation of compounds of general formula (I) Lia-bM1bV2-cM2c(PO4)x??(I) wherein M1, M2, a, b, c and x have the following meanings: M1: Na, K, Rb and/or Cs, M2: Ti, Zr, Nb, Cr, Mn, Fe, Co, Ni, Al, Mg and/or Sc, a: 1.5-4.5, b: 0-0.6, c: 0-1.98 and x: number to equalize the charge of Li and V and M1 and/or M2, if present, wherein a-b is >0, to a compound according to general formula (I) as defined above, to spherical agglomerates and/or particles comprising at least one compound of general formula (I) as defined above, to the use of such a compound for the preparation of a cathode of a lithium ion battery or an electrochemical cell, and to a cathode for a lithium ion battery, comprising at least one compound as defined above.

Abstract: The present invention provides a semiconductor ceramic composition which is represented by a composition formula of [(Bi.A)x(Ba1-yRy)1-x](Ti1-zMz)aO3 (in which A is at least one kind of Na, Li and K, R is at least one kind of rare earth elements (including Y), and M is at least one kind of Nb, Ta and Sb), in which a, x, y and z satisfy 0.90?a?1.10, 0<x?0.30, 0?y?0.050 and 0?z?0.010 and an average distance between voids, which is an average value of a space between voids being internally present, is 1.0 ?m or more and 8.0 ?m or less.

Abstract: The present invention relates to an Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material of the present invention is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula SbxTeyTi100-x-y, where 0<x<80 and 0<y<100-x. When the Sb—Te—Ti phase-change memory material is a Ti—Sb2Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. In a crystallization process of an Sb—Te phase-change material in the prior art, gain growth dominates, so the phase change rate is high, but the retention cannot meet industrial requirements.

Abstract: A polymer composition comprises at least one substantially non-conductive polymer binder and at least first and second electrically conductive fillers. The first electrically conductive filler is comprised of particles having avoid-bearing structure; and the second electrically conductive filler is comprised of particles which are acicular in shape.

Abstract: A battery active material includes a crystal phase that is represented by a formula Y2?xScxTi2O5S2 (where 0<x<2), and has a Ruddlesden-Popper structure.

Abstract: [Object] Provided are: a Zn—Si—O-based oxide sintered body, which suppresses abnormal discharge and so forth when used as a sputtering target, or suppresses a splash phenomenon when used as a tablet for vapor deposition; a method for producing the Zn—Si—O-based oxide sintered body; and the like. [Solution] The Zn—Si—O-based oxide sintered body contains zinc oxide as a main component and Si, and is characterized in that a Si content is 0.1 to 10 atomic % with an atomic ratio of Si/(Zn+Si), the Si element is contained in a wurtzite-type zinc oxide phase to form a solid solution, and the oxide sintered body does not contain a SiO2 phase and zinc silicate (Zn2SiO4) as a spinel-type composite oxide phase.

Abstract: A cathode active material including: a lithium metal oxide core represented by Formula 1 below; and an oxide coating layer formed on the lithium metal oxide core: Li[LixMeyMz]O2+d.??<Formula 1> In Formula 1: x+y+z=1 (0<x<0.33 and 0<z<0.1); 0?d?0.1; Me includes at least one metal selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Al, Mg, Zr, and B; and M includes at least one metal selected from the group consisting of Mo, W, Ir, Ni, and Mg.

Abstract: [Problem] Many oxide-ion conductors exhibit high functionality at high temperatures due to the large weight and charge of oxide ions, and it has been difficult to achieve the functionality at low temperatures. [Solution] A perovskite oxide having hydride ion conductivity, at least 1 at % of the oxide ions (O2?) contained in a titanium-containing perovskite oxide being substituted with hydride ions (H?). This oxide, in which negatively charged hydride ions (H?) are used for the ionic conduction, has both hydride ion conductivity and electron conductivity. As a starting material, the titanium-containing perovskite oxide is kept together with a powder of an alkali metal or alkaline-earth metal hydride selected from LiH, CaH2, SrH2, and BaH2 in a temperature range of 300° C. or higher and lower than the melting point of the hydride in a vacuum or an inert gas atmosphere to substitute some of the oxide ions in the oxide with the hydride ions, resulting in the introduction of the hydride ions into oxygen sites.

Abstract: According to one embodiment, an active material containing a niobium titanium composite oxide is provided. The niobium titanium composite oxide has average composition represented by LiyNb2+xTi1?xO7+0.5x (0?x?0.5, 0?y?5.5). The niobium titanium composite oxide satisfies peak intensity ratios represented by the following formulae (1) to (3): 0.05?(B/A)?0.7??(1) 0.01?(C/A)?0.2??(2) 0?(D/A)?0.

Abstract: The object of this invention is to provide a high quality titanium target for sputtering capable of reducing the impurities that cause generation of particles and abnormal discharge, which is free from fractures and cracks during high power sputtering (high rate sputtering), and capable of stabilizing the sputtering properties and effectively suppressing the generation of particles upon deposition. This invention is able to solve foregoing problems using a high purity titanium target for sputtering containing, as additive components, 3 to 10 mass ppm of S and 0.5 to 3 mass ppm of Si, and in which the purity of the target excluding additive components and gas components is 99.995 mass percent or higher.