Titanium Containing Patents (Class 252/519.12)
  • Patent number: 10680241
    Abstract: The present application describes a process for the preparation of titanium-based compounds having an anatase type structure with cationic vacancies arising from a partial substitution of oxygen atoms by fluorine atoms and hydroxyl groups. Electrochemically active materials comprising the titanium-based compounds for use in lithium-ion battery electrodes are also described.
    Type: Grant
    Filed: November 20, 2015
    Date of Patent: June 9, 2020
    Assignees: HYDRO-QUEBEC, UNIVERSITE PIERRE ET MARIE CURIE (PARIS 6), CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Damien Dambournet, Wei Li, Henri Groult, Sandrine Leclerc, Christian Julien, Karim Zaghib
  • Patent number: 10600865
    Abstract: Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method for making the same in a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, phase change layers, and sensor devices.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: March 24, 2020
    Assignee: THE UNIVERSITY OF CHICAGO
    Inventors: Angshuman Nag, Dmitri V. Talapin
  • Patent number: 10544061
    Abstract: The present application provides vanadium dioxide doped with Ti, or vanadium dioxide further doped with other atoms selected from the group of W, Ta, Mo, and Nb. The vanadium dioxide of the present application is excellent in moisture resistance and in which deterioration of endothermic characteristics due to moisture is suppressed.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: January 28, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Sakyo Hirose
  • Patent number: 10325726
    Abstract: A multilayer ceramic capacitor includes a laminated body and first and second external electrodes respectively on both end surfaces of the laminated body. When regions where first internal electrodes or second internal electrodes are not present are regarded as side margin portions in a cross section of the laminated body as viewed from the laminating direction, the side margin portions include multiple side margin layers, and the content of Si in the side margin layer closest to the internal electrode is lower than that in the side margin layer other than the side margin layer closest to the internal electrode.
    Type: Grant
    Filed: April 24, 2018
    Date of Patent: June 18, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Hideaki Tanaka, Daiki Fukunaga, Koji Moriyama
  • Patent number: 10229788
    Abstract: A multilayer ceramic capacitor includes a laminated body and first and second external electrodes respectively on both end surfaces of the laminated body. When regions where first internal electrodes or second internal electrodes are not present are regarded as side margin portions in a cross section of the laminated body as viewed from the laminating direction, the side margin portions include multiple side margin layers, and the content of Si in the side margin layer closest to the internal electrode is lower than that in the side margin layer other than the side margin layer closest to the internal electrode.
    Type: Grant
    Filed: April 24, 2018
    Date of Patent: March 12, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Hideaki Tanaka, Daiki Fukunaga, Koji Moriyama
  • Patent number: 10036717
    Abstract: A thin film gas sensor device includes a substrate, a nanostructured thin film layer, and a first and a second electrode. The nanostructured thin film layer is supported by the substrate and is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo an increase in a density of the holes in the presence of a target gas, thereby decreasing an electrical resistance of the nanostructured thin film layer. The first and the second electrodes are supported by the substrate and are operably connected to the nanostructured thin film layer, such that the decrease in electrical resistance can be detected.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: July 31, 2018
    Assignee: Robert Bosch GmbH
    Inventors: Ashwin K. Samarao, Gary O'Brien, Ando Feyh
  • Patent number: 9938619
    Abstract: A chemical vapor deposition process for depositing a titanium oxide coating is provided. The chemical vapor deposition process for depositing the titanium oxide coating includes providing a glass substrate. A gaseous mixture is formed. The gaseous mixture includes a titanium-containing compound and a fluorine-containing compound. The titanium-containing compound is an oxygen-containing compound or the gaseous mixture includes a first oxygen-containing compound. The gaseous mixture is directed toward and along the glass substrate. The mixture reacts over the glass substrate to form the titanium oxide coating thereon.
    Type: Grant
    Filed: September 9, 2015
    Date of Patent: April 10, 2018
    Assignee: Pilkington Group Limited
    Inventors: Srikanth Varanasi, Jun Ni, Douglas M. Nelson
  • Patent number: 9680180
    Abstract: The use of particles of at least one crystalline oxide, preferably metal oxide, having an average particle size of less than 500 nm and a fluorine content of between 0.5 and 30% by weight, preferably between 0.5 and 5%, even more preferably between 1.0 and 4%, for the preparation of solid-state electrolytes, is described. Also described is a solid-state electrolyte, containing particles of at least one crystalline oxide, preferably metal oxide, having an average particle size of less than 500 nm, preferably between 10 and 500 nm, even more preferably between 50 and 300 nm; a fluorine content as noted above; an alkali or alkaline-earth metal content of between 0.5 and 10% by weight, preferably between 0.5 and 5%, even more preferably between 1 and 4%. Furthermore an inorganic-organic hybrid electrolyte obtainable by means of reaction of the aforementioned solid-state electrolyte with ionic liquids is described.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: June 13, 2017
    Assignee: BRETON S.P.A.
    Inventors: Vito Di Noto, Federico Bertasi, Enrico Negro, Matteo Piga, Mauro Bettiol, Fabio Bassetto
  • Patent number: 9262018
    Abstract: A touch panel is made by forming a routing and pad pattern group on a substrate to include first and second routing lines, first pad electrodes connected to the first routing line, and second pad electrodes connected to the second routing line, by using a first mask; forming a sensor electrode pattern group on the substrate having the routing and pad pattern group formed thereon to include first sensor electrodes formed in a first direction, second sensor electrodes formed in a second direction, and connection portions that each connects adjacent first sensor electrodes, by using a second mask; forming a first insulating layer to include contact holes to expose portions of the second sensor electrodes, respectively, by using a third mask; and forming bridges that each connects adjacent second sensor electrodes through the contact holes and a second insulating layer on the bridges, by using a fourth mask.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: February 16, 2016
    Assignee: LG DISPLAY CO., LTD.
    Inventors: Seung-Hyun Kim, Hyung-Chul Kim, Tae-Yeon Yoo
  • Patent number: 9079165
    Abstract: The instant disclosure relates to a preparation method of ethanol reforming catalyst, comprising the following steps. The first step is mixing a first metal precursor, a second metal precursor, and a third metal precursor with an organic medium to form a mixture. The next step is adding a surfactant to the mixture, and then allowing resting for 3 to 7 days to form a colloidal gel. The next step is calcining the colloidal gel for 1 to 5 hours in a first temperature region of 350° C. to 550° C., and then calcining the colloidal gel for 1 to 5 hours in a second temperature region of 800° C. to 1000° C. to form an ethanol reforming catalyst. The instant disclosure further provides an ethanol reforming catalyst composition.
    Type: Grant
    Filed: April 29, 2013
    Date of Patent: July 14, 2015
    Assignee: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Chi-Shen Lee, Sheng-Feng Weng, Yun-Sheng Chen, Yun-Hsin Wang
  • Patent number: 9068258
    Abstract: Provided is a titanium target for sputtering having a Shore hardness Hs of 20 or more and a basal plane orientation ratio of 70% or less. In the titanium target for sputtering, the purity of titanium is 99.995 mass % or more, excluding gas components. It is an object of the present invention to provide a high-quality titanium target for sputtering, in which impurities are reduced, and which can prevent occurrence of cracking or breaking in high-power sputtering (high-rate sputtering), stabilize sputtering characteristics, and effectively suppress occurrence of particles during formation of a film.
    Type: Grant
    Filed: October 24, 2011
    Date of Patent: June 30, 2015
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Shiro Tsukamoto, Nobuhito Makino, Hideaki Fukuyo
  • Patent number: 9039943
    Abstract: According to example embodiments, a conductive paste includes a conductive component that contains a conductive powder and a titanium (Ti)-based metallic glass. The titanium-based metallic glass has a supercooled liquid region of about 5K or more, a resistivity after crystallization that is less than a resistivity before crystallization by about 50% or more, and a weight increase by about 0.5 mg/cm2 or less after being heated in a process furnace at a firing temperature. According to example embodiments, an electronic device and a solar cell may include at least one electrode formed using the conductive paste according to example embodiments.
    Type: Grant
    Filed: February 24, 2012
    Date of Patent: May 26, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Se Yun Kim, Eun-Sung Lee, Sang-Soo Jee, Do-Hyang Kim, Ka-Ram Lim
  • Patent number: 9034254
    Abstract: Disclosed is an antibacterial composition comprising titanium oxide particles immobilized with an antibody having affinity and cognitive power to a microorganism of interest, and a method for sterilizing the microorganism by using the same. In particular, the present invention relates to a method for preparing functional titanium oxide particles capable of recognizing a microorganism or a virus of interest, and a method for selectively and efficiently sterilizing the same by using the functional titanium oxide particles, and not for randomly sterilizing microorganisms or viruses by using conventional titanium oxide particles having no recognition power to a microorganism or a virus of interest.
    Type: Grant
    Filed: November 8, 2012
    Date of Patent: May 19, 2015
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Byoung Chan Kim, Jong Soo Jurng, Min Young Song
  • Publication number: 20150109094
    Abstract: Provided is a semiconductor ceramic composition that is a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO3-based oxide is substituted by Bi and A (in which A is at least one kind of Na, Li and K), the semiconductor ceramic composition having a region between a center portion and an outer shell portion within a crystal grain, in which when Bi concentration is measured in a radial direction within the crystal grain, the Bi concentration in the region is higher than both Bi concentration in the center portion and Bi concentration in the outer shell portion.
    Type: Application
    Filed: April 19, 2013
    Publication date: April 23, 2015
    Applicant: HITACHI METALS, LTD.
    Inventors: Takeshi Shimada, Itaru Ueda, Kentaro Ino
  • Patent number: 9011713
    Abstract: Provided are a composite including a lithium titanium oxide and a bismuth titanium oxide, a method of manufacturing the composite, an anode active material including the composite, an anode including the anode active material, and a lithium secondary battery having improved cell performance by including the anode.
    Type: Grant
    Filed: March 14, 2012
    Date of Patent: April 21, 2015
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Min-sang Song, Kyu-sung Park, Gue-sung Kim, Young-min Choi
  • Publication number: 20150097650
    Abstract: A semiconductor ceramic composition which includes a compound represented by the following formula (1) as a main component, (Ba1-x-y-wBixAyREw)m(Ti1-zTMz)O3 (1) (wherein, A is at least one element selected from Na or K, RE is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er, TM is at least one element selected from the group consisting of V, Nb and Ta, w, x, y, z and m satisfy the following relationships of (2)˜(5), 0.007?x?0.125 (2), x<y?2.0x (3), 0?(w+z)?0.01 (4), 0.94?m?0.999 (5)). And the semiconductor ceramic composition includes Ca in a proportion of 0.01˜0.055 mol in terms of element relative to 1 mol of Ti sites.
    Type: Application
    Filed: September 30, 2014
    Publication date: April 9, 2015
    Inventors: Yoshikazu SHIMURA, Kazuhiko ITOH
  • Publication number: 20150092820
    Abstract: Provided are a metal nitride film for a thermistor, which has an excellent bending resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride film for a thermistor, which consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and the peak ratio of the diffraction peak intensity of a-axis orientation (100) relative to the diffraction peak intensity of c-axis orientation (002) (i.e., the diffraction peak intensity of a-axis orientation (100)/the diffraction peak intensity of c-axis orientation (002)) is 0.1 or lower in X-ray diffraction.
    Type: Application
    Filed: March 25, 2013
    Publication date: April 2, 2015
    Inventors: Hiroshi Tanaka, Toshiaki Fujita, Noriaki Nagatomo, Kazutaka Fujiwara, Hitoshi Inaba
  • Publication number: 20150069308
    Abstract: Provided is a method for producing a lead-free, perovskite semiconductor ceramic composition which is capable of suppressing the temperature coefficient of resistance ? from becoming small, and obtaining stable characteristics. The method for producing a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO3-based oxide is substituted by Bi and A (in which A is at least one kind of Na, Li and K), the method including: calcining a raw material for forming the semiconductor ceramic composition at 700° C. to 1,300° C.; adding an oxide containing Ba and Ti, which becomes a liquid phase at 1,300° C. to 1,450° C., to the calcined raw material; forming the same; and then sintering at a temperature of 1,300° C. to 1,450° C.
    Type: Application
    Filed: April 19, 2013
    Publication date: March 12, 2015
    Applicant: HITACHI METALS, LTD.
    Inventors: Takeshi Shimada, Itaru Ueda, Kentaro Ino
  • Publication number: 20150061820
    Abstract: Provided are a metal nitride material for a thermistor, which has high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1-wAw)xAlyNz (where “M” represents at least one element selected from Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one element selected from Mn, Cu, Ni, Fe, and Co, which is different from the selected “M”, 0.0<w<1.0, 0.70?y/(x+y)?0.98, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.
    Type: Application
    Filed: August 26, 2014
    Publication date: March 5, 2015
    Inventors: Toshiaki Fujita, Hiroshi Tanaka, Noriaki Nagatomo
  • Publication number: 20150061821
    Abstract: Provided are a metal nitride material for a thermistor, which has high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1-vAv)xAly(N1-wOw)z (where “M” represents at least one element selected from Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one element selected from Mn, Cu, Ni, Fe, and Co, which is different from the selected “M”, 0.0<v<1.0, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.
    Type: Application
    Filed: August 26, 2014
    Publication date: March 5, 2015
    Inventors: Toshiaki Fujita, Hiroshi Tanaka, Noriaki Nagatomo
  • Publication number: 20150049788
    Abstract: Provided are a metal nitride material for a thermistor, which has a high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1-vAv)xAly (N1-wOw)z (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one of Sc, Zr, Mo, Nb, and W, 0.0<v<1.0, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.
    Type: Application
    Filed: August 8, 2014
    Publication date: February 19, 2015
    Inventors: Toshiaki Fujita, Hiroshi Tanaka, Noriaki Nagatomo
  • Publication number: 20150036723
    Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.
    Type: Application
    Filed: February 26, 2013
    Publication date: February 5, 2015
    Inventors: Toshiaki Fujita, Hiroshi Tanaka, Hitoshi Inaba, Kazutaka Fujiwara, Noriaki Nagatomo
  • Publication number: 20150023394
    Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAly(N1-wOw)z (where 0.70?y/(x+y)?0.95, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.
    Type: Application
    Filed: February 21, 2013
    Publication date: January 22, 2015
    Inventors: Toshiaki Fujita, Hiroshi Tanaka, Hitoshi Inaba, Kazutaka Fujiwara, Noriaki Nagatomo
  • Patent number: 8937030
    Abstract: The present invention is directed to perovskite nanostructures of Formula ABO3, wherein A and B represent one or more metals with A having a valence lower than B, to methods of making the perovskite nanostructures of Formula ABO3 comprising their synthesis within and precipitation from reverse micelles, and the use of the perovskite nanostructures of Formula ABO3 as capacitors, and their use in dynamic random access memory, electromechanics, and non-linear optics.
    Type: Grant
    Filed: October 2, 2007
    Date of Patent: January 20, 2015
    Assignee: Research Foundation of the City University of New York
    Inventors: Kai Su, Nan-Loh Yang
  • Publication number: 20150014605
    Abstract: The amount of lithium ions that can be received and released in and from a positive electrode active material is increased, and high capacity and high energy density of a secondary battery are achieved. Provided is a lithium-manganese composite oxide represented by LixMnyMzOw, where M is a metal element other than Li and Mn, or Si or P, and y, z, and w satisfy 0?x/(y+z)<2, y>0, z>0, 0.26?(y+z)/w<0.5, and 0.2<z/y<1.2. The lithium manganese composite oxide has high structural stability and high capacity.
    Type: Application
    Filed: June 30, 2014
    Publication date: January 15, 2015
    Inventors: Takahiro KAWAKAMI, Shuhei YOSHITOMI, Teruaki OCHIAI, Yumiko SAITO, Yohei MOMMA, Satoshi SEO, Mayumi MIKAMI, Shunsuke ADACHI
  • Patent number: 8932495
    Abstract: Embodiments of the invention generally provide hydrogen-doped and/or fluorine-doped transparent conducting oxide (TCO) materials and processes for forming such doped TCO materials. In one embodiment, a method for fabricating a doped TCO on a substrate surface includes forming a TCO material on a substrate, exposing the TCO material to a hydrogen plasma while forming a hydrogen-doped TCO material during an atmospheric pressure plasma (APP) process, wherein the hydrogen-doped TCO material contains atomic hydrogen at a concentration within a range from about 1 at % (atomic percent) to about 30 at %, and exposing the hydrogen-doped TCO material to a thermal annealing process. In another embodiment, the method includes exposing the TCO material to a fluorine plasma while forming a fluorine-doped TCO material during the APP process, wherein the fluorine-doped TCO material contains atomic fluorine at a concentration within a range from about 1 at % to about 30 at %.
    Type: Grant
    Filed: March 12, 2012
    Date of Patent: January 13, 2015
    Assignee: Clearist, Inc.
    Inventors: Paul Phong Nguyen, Scott Allen Jewhurst
  • Patent number: 8926868
    Abstract: A superconducting article comprises a substrate, a buffer layer overlying the substrate, and a high-temperature superconducting (HTS) layer overlying the buffer layer. The HTS layer includes a plurality of nanorods. A method of forming a superconducting article comprises providing a substrate, depositing a buffer layer overlying the substrate; forming a nanodot array overlying the buffer layer; depositing an array of nanorods nucleated on the nanodot array; and depositing a high-temperature superconducting (HTS) layer around the array of nanorods and overlying the buffer layer.
    Type: Grant
    Filed: July 27, 2010
    Date of Patent: January 6, 2015
    Assignees: University of Houston System, Superpower, Inc.
    Inventors: Venkat Selvamanickam, Goran Majkic, Maxim Martchevskii
  • Patent number: 8906711
    Abstract: A new, more economical method for preparing titania pastes for use in more efficient dye-sensitized solar cells is disclosed. The titania pastes are prepared by mixing titania nanoparticles with a titania sol including a titanium precursor. The disclosed method enables the control of titania nanoparticle concentration and morphology in the titania paste and is economical due to the relatively low reaction temperatures. The performances of dye-sensitized solar cells prepared using the disclosed titania pastes are also disclosed.
    Type: Grant
    Filed: July 1, 2012
    Date of Patent: December 9, 2014
    Inventor: Mohammad-Reza Mohammadi
  • Publication number: 20140349854
    Abstract: Provided is an iron-based superconducting material including an iron-based superconductor having a crystal structure of ThCr2Si2, and nanoparticles which are expressed by BaXO3 (X represents one, two, or more kinds of elements selected from a group consisting of Zr, Sn, Hf, and Ti) and have a particle size of 30 nm or less. The nanoparticles are dispersed in a volume density of 1×1021m?3 or more.
    Type: Application
    Filed: February 28, 2014
    Publication date: November 27, 2014
    Applicant: International Superconductivity Technology Center
    Inventors: Masashi Miura, Seiji Adachi, Keiichi Tanabe, Hideo Hosono
  • Patent number: 8858843
    Abstract: A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: October 14, 2014
    Assignee: Innovalight, Inc.
    Inventors: Elena Rogojina, Maxim Kelman, Giuseppe Scardera
  • Publication number: 20140302420
    Abstract: Novel anode materials including various compositions of vanadium-doped strontium titanate (SVT), and various compositions of vanadium- and sodium-doped strontium niobate (SNNV) for low- or intermediate-temperature solid oxide fuel cell (SOFCs). These materials offer high conductivity achievable at intermediate and low temperatures and can be used as the structural support of the SOFC anode and/or as the conductive phase of an anode. A method of making a low- or intermediate-temperature SOFC having an anode layer including SVT or SNNV is also provided.
    Type: Application
    Filed: March 12, 2014
    Publication date: October 9, 2014
    Applicant: University of Maryland, College Park
    Inventors: Eric D. WACHSMAN, Ke-Ji PAN, Colin GORE, Mohammed Hussain Abdul JABBAR, Hee Sung YOON
  • Publication number: 20140291588
    Abstract: Provided are a mixed cathode active material having improved power characteristics and safety, and a lithium secondary battery including the same. More particularly, the present invention relates to a mixed cathode active material which may assist power in a low SOC range to widen an available state of charge (SOC) range and may simultaneously provide improved safety by blending substituted LFP, in which operating voltage is adjusted by substituting a portion of iron (Fe) with other elements such as titanium (Ti), in order to prevent a rapid increase in resistance of manganese (Mn)-rich having high capacity but low operating voltage in a low SOC range (e.g., a SOC range of 10% to 40%), and a lithium secondary battery including the mixed cathode active material.
    Type: Application
    Filed: June 18, 2014
    Publication date: October 2, 2014
    Inventors: Song Taek Oh, Sang Uck Lee, Su Rim Lee, Geun Chang Chung, Jae Kook Kim, Jin Sub Lim
  • Patent number: 8828280
    Abstract: The paste composition for forming a back electrode of solar cell 10 provided by the present invention contains, as solids, an aluminum powder, a glass powder and a composite powder composed of a particulate composite of a metal oxide with a silicon-containing organic or inorganic compound. This composite powder is contained in an amount of at least 0.01 mass % but less than 0.45 mass % given 100 mass % as the total of the composite powder, the aluminum powder and the glass powder.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: September 9, 2014
    Assignee: Noritake Co., Ltd
    Inventors: Kosuke Ochi, Shinji Senda, Masao Yamagishi, Mamiko Kume
  • Publication number: 20140247107
    Abstract: A barium titanate semiconductor ceramic with positive resistance-temperature characteristics, which is represented by the general formula: BaTiO3, wherein a Ti site is partially substituted with Zr, and a content ratio of Zr falls within the range of 0.14 to 0.88 mol %, and a PTC thermistor using the same.
    Type: Application
    Filed: April 23, 2014
    Publication date: September 4, 2014
    Applicant: MURATA MANUFACTURING CO., LTD.
    Inventors: Wataru Aoto, Hayato Katsu, Yasuhiro Nabika
  • Patent number: 8808575
    Abstract: The present invention relates to a process for the preparation of compounds of general formula (I) Lia-bM1bV2-cM2c(PO4)x??(I) wherein M1, M2, a, b, c and x have the following meanings: M1: Na, K, Rb and/or Cs, M2: Ti, Zr, Nb, Cr, Mn, Fe, Co, Ni, Al, Mg and/or Sc, a: 1.5-4.5, b: 0-0.6, c: 0-1.98 and x: number to equalize the charge of Li and V and M1 and/or M2, if present, wherein a-b is >0, to a compound according to general formula (I) as defined above, to spherical agglomerates and/or particles comprising at least one compound of general formula (I) as defined above, to the use of such a compound for the preparation of a cathode of a lithium ion battery or an electrochemical cell, and to a cathode for a lithium ion battery, comprising at least one compound as defined above.
    Type: Grant
    Filed: April 2, 2013
    Date of Patent: August 19, 2014
    Assignee: BASF SE
    Inventors: Hartmut Hibst, Brian Roberts, Jordan Keith Lampert, Kirill Bramnik
  • Patent number: 8808576
    Abstract: The present invention relates to a process for the preparation of compounds of general formula (I) Lia-bM1bV2-cM2c(PO4)x??(I) wherein M1, M2, a, b, c and x have the following meanings: M1: Na, K, Rb and/or Cs, M2: Ti, Zr, Nb, Cr, Mn, Fe, Co, Ni, Al, Mg and/or Sc, a: 1.5-4.5, b: 0-0.6, c: 0-1.98 and x: number to equalize the charge of Li and V and M1 and/or M2, if present, wherein a-b is >0, to a compound according to general formula (I) as defined above, to spherical agglomerates and/or particles comprising at least one compound of general formula (I) as defined above, to the use of such a compound for the preparation of a cathode of a lithium ion battery or an electrochemical cell, and to a cathode for a lithium ion battery, comprising at least one compound as defined above.
    Type: Grant
    Filed: April 2, 2013
    Date of Patent: August 19, 2014
    Assignee: BASF SE
    Inventors: Hartmut Hibst, Brian Roberts, Jordan Keith Lampert, Kirill Bramnik
  • Publication number: 20140197156
    Abstract: The present invention provides a semiconductor ceramic composition which is represented by a composition formula of [(Bi.A)x(Ba1-yRy)1-x](Ti1-zMz)aO3 (in which A is at least one kind of Na, Li and K, R is at least one kind of rare earth elements (including Y), and M is at least one kind of Nb, Ta and Sb), in which a, x, y and z satisfy 0.90?a?1.10, 0<x?0.30, 0?y?0.050 and 0?z?0.010 and an average distance between voids, which is an average value of a space between voids being internally present, is 1.0 ?m or more and 8.0 ?m or less.
    Type: Application
    Filed: September 28, 2012
    Publication date: July 17, 2014
    Applicant: HITACHI METALS, LTD.
    Inventors: Kentaro Ino, Takeshi Shimada, Itaro Ueda, Toshiki Kida
  • Publication number: 20140192592
    Abstract: The present invention relates to an Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material of the present invention is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula SbxTeyTi100-x-y, where 0<x<80 and 0<y<100-x. When the Sb—Te—Ti phase-change memory material is a Ti—Sb2Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. In a crystallization process of an Sb—Te phase-change material in the prior art, gain growth dominates, so the phase change rate is high, but the retention cannot meet industrial requirements.
    Type: Application
    Filed: December 26, 2012
    Publication date: July 10, 2014
    Applicant: Shanghai Institute of Microsystem and Information Technology Chinese Academy
    Inventors: Liangcai Wu, Min Zhu, Zhitang Song, Feng Rao, Cheng Peng, Xilin Zhou, Kun Ren, Songlin Feng
  • Patent number: 8765027
    Abstract: A polymer composition comprises at least one substantially non-conductive polymer binder and at least first and second electrically conductive fillers. The first electrically conductive filler is comprised of particles having avoid-bearing structure; and the second electrically conductive filler is comprised of particles which are acicular in shape.
    Type: Grant
    Filed: May 2, 2008
    Date of Patent: July 1, 2014
    Assignee: Peratech Limited
    Inventors: David Lussey, David Bloor, Paul Laughlin, Cyril Hilsum
  • Publication number: 20140170495
    Abstract: A battery active material includes a crystal phase that is represented by a formula Y2?xScxTi2O5S2 (where 0<x<2), and has a Ruddlesden-Popper structure.
    Type: Application
    Filed: December 11, 2013
    Publication date: June 19, 2014
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Takeshi TOJIGAMORI, Hideki OKI
  • Publication number: 20140158951
    Abstract: [Object] Provided are: a Zn—Si—O-based oxide sintered body, which suppresses abnormal discharge and so forth when used as a sputtering target, or suppresses a splash phenomenon when used as a tablet for vapor deposition; a method for producing the Zn—Si—O-based oxide sintered body; and the like. [Solution] The Zn—Si—O-based oxide sintered body contains zinc oxide as a main component and Si, and is characterized in that a Si content is 0.1 to 10 atomic % with an atomic ratio of Si/(Zn+Si), the Si element is contained in a wurtzite-type zinc oxide phase to form a solid solution, and the oxide sintered body does not contain a SiO2 phase and zinc silicate (Zn2SiO4) as a spinel-type composite oxide phase.
    Type: Application
    Filed: July 3, 2012
    Publication date: June 12, 2014
    Applicant: SUMITOMO METAL MINING CO., LTD.
    Inventors: Yasunori Yamanobe, Kentaro Sogabe, Makoto Ozawa
  • Patent number: 8722250
    Abstract: A cathode active material including: a lithium metal oxide core represented by Formula 1 below; and an oxide coating layer formed on the lithium metal oxide core: Li[LixMeyMz]O2+d.??<Formula 1> In Formula 1: x+y+z=1 (0<x<0.33 and 0<z<0.1); 0?d?0.1; Me includes at least one metal selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Al, Mg, Zr, and B; and M includes at least one metal selected from the group consisting of Mo, W, Ir, Ni, and Mg.
    Type: Grant
    Filed: July 19, 2010
    Date of Patent: May 13, 2014
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Min-sik Park, Won-chang Choi, Dong-min Im
  • Publication number: 20140128252
    Abstract: [Problem] Many oxide-ion conductors exhibit high functionality at high temperatures due to the large weight and charge of oxide ions, and it has been difficult to achieve the functionality at low temperatures. [Solution] A perovskite oxide having hydride ion conductivity, at least 1 at % of the oxide ions (O2?) contained in a titanium-containing perovskite oxide being substituted with hydride ions (H?). This oxide, in which negatively charged hydride ions (H?) are used for the ionic conduction, has both hydride ion conductivity and electron conductivity. As a starting material, the titanium-containing perovskite oxide is kept together with a powder of an alkali metal or alkaline-earth metal hydride selected from LiH, CaH2, SrH2, and BaH2 in a temperature range of 300° C. or higher and lower than the melting point of the hydride in a vacuum or an inert gas atmosphere to substitute some of the oxide ions in the oxide with the hydride ions, resulting in the introduction of the hydride ions into oxygen sites.
    Type: Application
    Filed: July 5, 2012
    Publication date: May 8, 2014
    Applicants: KYOTO UNIVERSITY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Hiroshi Kageyama, Yoji Kobayashi, Mikio Takano, Takeshi Yajima
  • Publication number: 20140120404
    Abstract: According to one embodiment, an active material containing a niobium titanium composite oxide is provided. The niobium titanium composite oxide has average composition represented by LiyNb2+xTi1?xO7+0.5x (0?x?0.5, 0?y?5.5). The niobium titanium composite oxide satisfies peak intensity ratios represented by the following formulae (1) to (3): 0.05?(B/A)?0.7??(1) 0.01?(C/A)?0.2??(2) 0?(D/A)?0.
    Type: Application
    Filed: October 23, 2013
    Publication date: May 1, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kazuki ISE, Yorikazu YOSHIDA, Yasuhiro HARADA, Hiroki INAGAKI, Norio TAKAMI
  • Patent number: 8663440
    Abstract: The object of this invention is to provide a high quality titanium target for sputtering capable of reducing the impurities that cause generation of particles and abnormal discharge, which is free from fractures and cracks during high power sputtering (high rate sputtering), and capable of stabilizing the sputtering properties and effectively suppressing the generation of particles upon deposition. This invention is able to solve foregoing problems using a high purity titanium target for sputtering containing, as additive components, 3 to 10 mass ppm of S and 0.5 to 3 mass ppm of Si, and in which the purity of the target excluding additive components and gas components is 99.995 mass percent or higher.
    Type: Grant
    Filed: September 28, 2010
    Date of Patent: March 4, 2014
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Shiro Tsukamoto, Tomio Otsuki
  • Publication number: 20140038043
    Abstract: The object of the present invention is to provide a lithium transition metal silicate-type cathode active material that shows superior cycle characteristics, and shows little deterioration of discharge capacity even after repeated charge-and-discharge. In the present invention, a cathode active material that is expressed by the general formula Li2-yFe1-xMxSi1-yXyO4 (M=at least one transition metal selected from the group consisting of Mn, Ti, Cr, V, Ni, Co, Cu, Zn, Al, Ge, Zr, Mo, W; X=at least one element selected from the group consisting of Ti, Cr, V, Zr, Mo, W, P, B; 0?x<1, 0?y<0.25), and contains a lithium transition metal silicate, which comprises a mixed phase of an orthorhombic-type structure with a space group Pmn21 symmetry, and a monoclinic-type structure with a space group P21/n symmetry, is provided.
    Type: Application
    Filed: October 4, 2013
    Publication date: February 6, 2014
    Applicants: THE FURUKAWA BATTERY CO., LTD., FURUKAWA ELECTRIC CO., LTD.
    Inventors: Yosuke HIRAYAMA, Michio OHKUBO, Yoshinori KAZAMA, Hidetoshi ABE, Miyu NEMOTO
  • Publication number: 20140036410
    Abstract: A thin film capacitor includes a substrate and a dielectric thin film element formed on the substrate. The substrate can include an Si plate, an SiO2 film on the Si plate, and a Ti film formed on the SiO2 film. The dielectric thin film element includes a lower electrode, a dielectric thin film on the lower electrode, and an upper electrode formed on the dielectric thin film. The dielectric thin film is a thin film formed of a nanosheet, and a void portion of the dielectric thin film is filled with a p-type conductive organic polymer. Ti0.87O2, Ca2Nb3O10 or the like, is used as a dielectric material to form a major component of the nanosheet. As the p-type conductive organic polymer, polypyrrole, polyaniline, polyethylene dioxythiophene or the like, is suitable.
    Type: Application
    Filed: October 10, 2013
    Publication date: February 6, 2014
    Applicants: National Institute for Materials Science, Murata Manufacturing Co., Ltd.
    Inventors: Toshihiro Okamatsu, Minoru Osada, Takayoshi Sasaki
  • Patent number: 8628694
    Abstract: The invention relates to active material for the negative electrode of secondary rechargeable lithium batteries, wherein the active material is based on doped or undoped carbon-bearing lithium titanium ramsdellite oxide with general formula Li2Ti3O7 or Li2.28Ti3.43O8. The active material comprises a carbon substituted ramsdellite phase having a general formula Li2?4cCc—Ti3O7, with 0.1<c<0.5, and more than 0.1 mol % of spinel phase having a general formula Li1+xTi2?xO4 with 0<x<0.33.
    Type: Grant
    Filed: February 10, 2010
    Date of Patent: January 14, 2014
    Assignees: Umicore, Centre National de la Recherche Scientifique, Universite Montpellier, SAFT Groupe S.A.
    Inventors: Michèle Van Thournout, Laure Monconduit, Claire Villevieille, Josette Olivier-Fourcade, Jean-Claude Jumas, Cécile Tessier
  • Patent number: 8617430
    Abstract: Amorphous or partially amorphous nanoscale ion storage materials are provided. For example, lithium transition metal phosphate storage compounds are nanoscale and amorphous or partially amorphous in an as-prepared state, or become amorphous or partially amorphous upon electrochemical intercalation or de-intercalation by lithium. These nanoscale ion storage materials are useful for producing devices such as high energy and high power storage batteries.
    Type: Grant
    Filed: April 13, 2012
    Date of Patent: December 31, 2013
    Assignee: A123 Systems LLC
    Inventors: Yet-Ming Chiang, Anthony E. Pullen, Nonglak Meethong
  • Patent number: 8613872
    Abstract: A charge-carrier transport layer for an electro-optical component includes an organic charge-carrier transport material. A plurality of first particles having a diameter ranging from 1 nm to 100 nm is incorporated in the organic charge-carrier transport material and contains a first transparent oxide. A plurality of second particles having a diameter between 100 nm and 1000 nm is also incorporated into the organic charge-carrier transport material and contains a second transparent oxide. The index of refraction of the plurality of second particles differs from the index of refraction of the organic charge-transport material.
    Type: Grant
    Filed: August 20, 2010
    Date of Patent: December 24, 2013
    Assignee: Karlsruher Institut fuer Technologie
    Inventors: Uli Lemmer, Julian Hauss, Boris Riedel, Martina Gerken