Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with high reliability is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, and a conductive layer. The semiconductor layer, the second insulating layer, and the conductive layer are stacked in this order over the first insulating layer. The semiconductor layer contains indium and oxygen and has a composition falling within a range obtained by connecting first coordinates (1:0:0), second coordinates (2:1:0), third coordinates (14:7:1), fourth coordinates (7:2:2), fifth coordinates (14:4:21), sixth coordinates (2:0:3), and the first coordinates in this order with a straight line in a ternary diagram showing atomic ratios of indium to an element M and zinc. In addition, the element M is one or more of gallium, aluminum, yttrium, and tin.

Abstract: A negative electrode active material for a lithium secondary battery, which includes a silicon-based particle represented by M-SiOx, wherein M is Li, Mg, Ca, Al, or Ti, and 0?x<2, wherein the M-SiOx includes an amorphous phase at 20 wt % to 70 wt % based upon a total weight of the M-SiOx, thereby exhibiting excellent initial efficiency and lifespan characteristics, and a preparation method thereof.

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.

Abstract: Provided is a connection body of high-temperature superconducting wire materials including a first oxide high-temperature superconducting wire material and a second oxide high-temperature superconducting wire material, characterized in that a first superconducting layer of the first oxide high-temperature superconducting wire material and a second superconducting layer of the second oxide high-temperature superconducting wire material are bonded together via a junction including M-Cu—O (wherein M is a single metal element or a plurality of metal elements included in the first superconducting layer or the second superconducting layer). The connection body may be, for example, a connection body of Bi2223 wire materials, and the junction may include CaCuO2.

Abstract: A method for improving current carrying capacity of a second-generation high-temperature superconducting tape, which includes: stretching the second-generation high-temperature superconducting tape in a high-temperature environment, and carrying out an oxygenation heat treatment on the stretched second-generation high-temperature superconducting tape The atmosphere of the high-temperature environment is oxygen, or an inert gas, or a mixture thereof, and a temperature of the high-temperature environment is 450-650° C.; and a strain for stretching ranges from 0.1% to 1%, and a time for stretching ranges from 1 minute to 100 hours. The method of the present invention is a post-processing technique for the second-generation high-temperature superconducting tape with a simple treatment process and a controllable result, and by stretching, current carrying capacity of the superconducting tape is improved and anisotropy of superconductivity is reduced.

Abstract: A thermal insulating glass includes a glass substrate and a thermal insulating layer. The thermal insulating layer includes composite tungsten oxide and a binder. The composite tungsten oxide is represented by formula (1): MxWO3-yAy (1), where M is an alkali metal element or an alkaline earth metal element, W is tungsten, O is oxygen, A is a halogen element, and 0<x?1 and 0?y?0.5. And the binder includes one or more of the following components: silicon dioxide, titanium dioxide, and aluminium oxide. The thermal insulating glass can prevent the occurrence of obscuration. The thermal insulating has infrared reflectivity, high strength and good wear resistance, and can effectively resist high temperature and strong oxidation environment.

Abstract: A sacrificial positive active material for a lithium-ion electrochemical element which is a compound of formula (Li2O)x (MnO2)y(MnO)z(MOa)t in which: x+y+z+t=1; 1?x?y?0; 0.97?x?0.6; y?0.45; x ?0.17; y?0; y+z>0; t?0; 1?a<3. M is selected from the group consisting of Fe, Co, Ni, B, Al, Ti, Si, V, Mo, Zr and a mixture thereof.

Abstract: In a first aspect of a present inventive subject matter, a method of etching an object to be etched with an etching liquid that contains bromine, and the object contains at least gallium and/or aluminum.

Abstract: The invention provides an oxygen storage material having high oxygen storage capacity and high thermal durability. The oxygen storage material of the invention has some of the La sites of La2CuO4 with a K2NiF4-type crystal structure replaced by Ce. The oxygen storage material may have the composition La(2.00-x)CexCuO4 (0.20?×>0.00). The oxygen storage material may also have a precious metal supported. The precious metal may be Pt, Pd or Rh. The exhaust gas purification catalyst is an exhaust gas purification catalyst comprising an oxygen storage material according to the invention.

Abstract: Methods of forming metal multipod nanostructures. The methods may include providing a mixture that includes a metal acetylacetonate, a reducing agent, and a carboxylic acid. The mixture may be contacted with microwaves to form the metal multipod nanostructures. The methods may offer control over the structure and/or morphology of the metal multipod nano structures.

Abstract: Provided is a cathode active material including a core including a compound represented by Formula 1; and a coating layer including a phosphorus-containing compound disposed on a surface of the core: LiaZr?W?M1????O2?bSb??Formula 1 In Formula 1, M, Zr, W, a, ?, ?, and b are the same as defined in relation to the present specification.

Abstract: Packages for semiconductor devices, packaged semiconductor devices, and methods of packaging semiconductor devices are disclosed. In some embodiments, a package for a semiconductor device includes an integrated circuit die mounting region, a molding material around the integrated circuit die mounting region, and an interconnect structure over the molding material and the integrated circuit die mounting region. The interconnect structure has contact pads, and connectors are coupled to the contact pads. Two or more of the connectors have an alignment feature formed thereon.

Abstract: A multilayer ceramic capacitor includes: a multilayer chip having a parallelepiped shape in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked and each of the internal electrode layers is alternately exposed to two end faces of the multilayer chip, a main component of the plurality of dielectric layers being a ceramic; and a pair of external electrodes that are formed on the two end faces; wherein: the pair of external electrodes have a structure in which a plated layer is formed on a ground layer; a main component of the ground layer is a metal or an alloy including at least one of Ni and Cu; and at least a part of a surface of the ground layer on a side of the plated layer includes an interposing substance including Mo.

Abstract: The invention provides a humidity sensor and a manufacturing method thereof. The humidity sensor comprises a substrate, an electrode structure, and a humidity sensing structure. The electrode structure is disposed on the substrate. The humidity sensing structure is disposed on the electrode structure. The humidity sensing structure includes a first humidity sensing layer and a second humidity sensing layer. The first humidity sensing layer is in direct contact with the electrode structure and has a first oxygen vacancy number. The second humidity sensing layer is disposed on the first humidity sensing layer and has a second oxygen vacancy number. The second oxygen vacancy number is greater than the first oxygen vacancy number.

Abstract: An electrochromic device and method, the device including: a first transparent conductor layer; a working electrode disposed on the first transparent conductor layer and including nanostructures; a counter electrode; a solid state electrolyte layer disposed between the counter electrode and the working electrode; and a second transparent conductor layer disposed on the counter electrode. The nanostructures may include transition metal oxide nanoparticles and/or nanocrystals configured to tune the color of the device by selectively modulating the transmittance of near-infrared (NIR) and visible radiation as a function of an applied voltage to the device.

Abstract: A lithium-excess cathode material according to Li1+xNiaMnbCocModO2?y (0<x<0.3, 0?a?1, 0?b?1, 0?c?1, 0?d?0.2, 0?y?0.25) in the form of secondary spherical microparticles formed from primary spherical nanoparticles. The primary nanoparticles can in the range of ˜130 nm to 170 nm and the secondary in the range of ˜2-3 ?m. A method of formation includes mixing a carbonates or hydroxides solution into a mixed solution of transition metal (M) ions with predetermined stoichiometry under stirring, and aging resulting transition metal carbonates or hydroxides at a predetermined temperature for period of time to produce primary nanoparticles of a predetermined size. A gas-solid interface reaction to uniformly creating oxygen vacancies without affecting structural integrity of Li-excess layered oxides is also provided.

Abstract: A non-aqueous electrolyte secondary battery is provided that has both good safety and durability characteristics while at the same time has high charge/discharge capacity. The cathode active material for a non-aqueous electrolyte secondary battery of the present invention is a lithium nickel composite oxide to which at least two or more kinds of metal elements including aluminum are added, and comprises secondary particles that are composed of fine secondary particles having an average particle size of 2 ?m to 4 ?m, and rough secondary particles having an average particle size of 6 ?m to 15 ?m, with an overall average particle size of 5 ?m to 15 ?m; where the aluminum content of fine secondary particles (metal mole ratio: SA) is greater than the aluminum content of rough secondary particles (metal mole ratio: LA), and preferably the aluminum concentration ratio (SA/LA) is within the range 1.2 to 2.6.

Abstract: Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.

Abstract: The field-effect mobility of a semiconductor device is improved, and the on-state current thereof is increased, so that stable electrical characteristics are obtained. The semiconductor device includes a first oxide insulator, an oxide semiconductor, and a second oxide insulator which are stacked. The first oxide insulator includes In, Zn, and M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf), and the content of In is lower than the content of M, and the content of In is lower than the content of Zn. The oxide semiconductor includes In and M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf), and the content of In is higher than the content of M. The second oxide insulator includes In, Zn, and M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf).

Abstract: A ceramic material has a composition represented by the formula: La1-x-yAEyMnO3 in which AE is at least one of Ca and Sr; x satisfies 0<x?about 0.20; and y satisfies 0<y?about 0.10.

Abstract: To provide a lithium-containing composite oxide capable of obtaining a lithium ion secondary battery having a large discharge capacity wherein the deterioration of the discharge voltage due to repetition of a charge and discharge cycle is suppressed, a cathode active material, a positive electrode for a lithium ion secondary battery and a lithium ion secondary battery. A lithium-containing composite oxide, which is represented by the formula I: LiaiNibCocMndMeO2??Formula I, wherein M is at least one member selected from the group consisting of Na, Mg, Ti, Zr, Al, W and Mo, a+b+c+d+e=2, 1.1?a/(b+c+d+e)?1.4, 0.2?b/(b+c+d+e)?0.5, 0?c/(b+c+d+e)?0.25, 0.3?d/(b+c+d+e)?0.6, and 0?e/(b+c+d+e)?0.1, and wherein the valence of Ni is from 2.15 to 2.45.

Abstract: The invention discloses a humidity sensor based on squaraine polymer and the preparation method and use thereof. Specifically, the humidity sensor disclosed by the invention comprises a coating material and an interdigital electrode, wherein the coating material is a squaraine polymer as shown in formula I, n is an integer of 40-50, the coating material is brushed on the interdigital electrode, and the thickness is 100-400 microns. The humidity sensor disclosed by the invention has the advantages that the preparation is convenient, and the operation is simple; the response time is short, and the response for humidity change is higher than that of common metallic oxides; the recovery time is short, and the device performance is stable; the humidity hysteresis of the device is high under high humidity environment.

Abstract: A method and apparatus for operating an intermediate-temperature solid-oxide fuel cell stack (10) with a mixed ionic/electronic conducting electrolyte in order to increase its efficiency. The required power output of the solid-oxide fuel cell stack (10) is determined and one or more operating conditions of the solid fuel cell stack (10) are controlled dependent upon the determined required power output. The operating conditions that are controlled may be at least one or the temperature of the fuel cell stack and the dilution of fuel delivered to the fuel cell stack.

Abstract: Set forth herein are positive electrode active material compositions, e.g., lithium-rich nickel manganese cobalt oxides. The lithium-rich nickel manganese cobalt oxides set forth herein are characterized, in some examples, by an expanded unit cell which maximizes the uniform distribution of transition metals in the crystalline oxide. Also set forth herein are positive electrode thin films including lithium-rich nickel manganese cobalt oxide materials. Disclosed herein are novel and inventive methods of making and using lithium-rich nickel manganese cobalt oxide materials for lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these materials.

Abstract: A lithium-containing composite oxide essentially containing Li, Ni, Co and Mn, which has a crystal structure with space group R-3m, with a c-axis lattice constant being from 14.208 to 14.228 ?, and with an a-axis lattice constant and the c-axis lattice constant satisfying the relation of 3a+5.615?c?3a+5.655, and of which the integrated intensity ratio (I003/I104) of the (003) peak to the (104) peak in an XRD pattern is from 1.21 to 1.39.

Abstract: A computer-implemented method for selectively applying malware signatures may include (1) receiving a time-sensitive malware signature at a receiving time to apply to a computing environment, (2) identifying a first target object observed within the computing environment at a first observation time, (3) deactivating the time-sensitive malware signature with respect to the first target object based on a difference between the receiving time and the first observation time, (4) observing a second target object within the computing environment subject to malware scans, the second target object being observed within the computing environment at a second observation time that is later than the first observation time, and (5) activating the time-sensitive malware signature with respect to the second target object based on a difference between the receiving time and the second observation time. Various other methods, systems, and computer-readable media are also disclosed.

Abstract: A method of forming an electronic structural element having a stack including first and second electrode layers arranged alternatively with material layers is disclosed. A stack is formed with the first electrode layers projecting beyond a first lateral side of the stack and the second electrode layers spaced radially inward from the first lateral side. A first contacting structure that contacts each first electrode layer is applied directly to the first side of the stack, which contacting structure embeds such the projecting first electrode layers in an electrically conductive manner. A second contacting structure is formed by exposing the first and second electrode layers at a second side of the stack, forming, by an additive method, a solvent-free insulating structure that electrically insulates the first electrode layers, and applying an electrically conductive material over the solvent-free insulating structure to form the second contacting structure that contacts each second electrode layer.

Abstract: An ink of the formula: 60-80% by weight BaTiO3 particles coated with SiO2; 5-50% by weight high dielectric constant glass; 0.1-5% by weight surfactant; 5-25% by weight solvent; and 5-25% weight organic vehicle. Also a method of manufacturing a capacitor comprising the steps of: heating particles of BaTiO3 for a special heating cycle, under a mixture of 70-96% by volume N2 and 4-30% by volume H2 gas; depositing a film of SiO2 over the particles; mechanically separating the particles; incorporating them into the above described ink formulation; depositing the ink on a substrate; and heating at 850-900° C. for less than 5 minutes and allowing the ink and substrate to cool to ambient in N2 atmosphere. Also a dielectric made by: heating particles of BaTiO3 for a special heating cycle, under a mixture of 70-96% by volume N2 and 4-30% by volume H2 gas; depositing a film of SiO2 over the particles; mechanically separating the particles; forming them into a layer; and heating at 850-900° C.

Abstract: The ceramic material of the present invention contains a crystalline phase of a complex oxide containing a Group II element M and a rare earth element RE. The Group II element M is Sr, Ca, or Ba. An XRD diagram of the ceramic material shows a first new peak between peaks derived from the (040) plane and the (320) plane of MRE2O4. Such a ceramic material may be manufactured by, for example, preparing a material containing MRE2O4 or a material capable of reacting in thermal spray flame to produce MRE2O4 as a thermal spray material, and thermally spraying the thermal spray material onto a predetermined object.

Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

Abstract: After a sputtering gas is supplied to a deposition chamber, plasma including an ion of the sputtering gas is generated in the vicinity of a target. The ion of the sputtering gas is accelerated and collides with the target, so that flat-plate particles and atoms of the target are separated from the target. The flat-plate particles are deposited with a gap therebetween so that the flat plane faces a substrate. The atom and the aggregate of the atoms separated from the target enter the gap between the deposited flat-plate particles and grow in the plane direction of the substrate to fill the gap. A film is formed over the substrate. After the deposition, heat treatment is performed at high temperature in an oxygen atmosphere, which forms an oxide with a few oxygen vacancies and high crystallinity.

Abstract: The invention relates to cathode materials for Li-ion batteries in the quaternary phase diagram Li[Li1/3Mn2/3]O2—LiMn1/2Ni1/2O2—LiNiO2—LiCoO2, and having a high nickel content. Also a method to manufacture these materials is disclosed. The cathode material has a general formula Lia ((Niz(Ni1/2Mn1/2)yCox)1?kAk)2?aO2, wherein x+y+z=1, 0.1?x?0.4, 0.36?z?0.50, A is a dopant, 0?k?0.1, and 0.95?a?1.05, and having a soluble base content (SBC) within 10% of the equilibrium soluble base content.

Abstract: A semiconductor device according to an embodiment includes a first conductive layer, a second conductive layer, and a dielectric film provided between the first and the second conductive layers. The dielectric film including a fluorite-type crystal and a positive ion site includes Hf and/or Zr, and a negative ion site includes O. In the dielectric film, parameters a, b, c, p, x, y, z, u, v and w satisfy a predetermined relation. The axis length of the a-axis, b-axis and c-axis of the original unit cell is a, b, and c, respectively. An axis in a direction with no reversal symmetry is c-axis, a stacking direction of atomic planes of two kinds formed by negative ions disposed at different positions is a-axis, the remainder is b-axis. The parameters x, y, z, u, v and w are values represented using the parameter p.

Abstract: Compositions and methods of making are provided for treated mesoporous metal oxide microspheres electrodes. The compositions include microspheres with an average diameter between about 200 nanometers and about 10 micrometers and mesopores on the surface and interior of the microspheres. The methods of making include forming a mesoporous metal oxide microsphere composition and treating the mesoporous metal oxide microspheres by at least annealing in a reducing atmosphere, doping with an aliovalent element, and coating with a coating composition.

Abstract: An oxide represented by Formula 1: (Sr2?xAx)(M1?yQy)D2O7+d,??Formula 1 wherein A is barium (Ba), M is at least one selected from magnesium (Mg) and calcium (Ca), Q is a Group 13 element, D is at least one selected from silicon (Si) and germanium (Ge), 0?x?2.0, 0<y?1.0, and d is a value which makes the oxide electrically neutral.

Abstract: A method for making a cathode active material of a lithium ion battery, the cathode active material being represented by a chemical formula of Li[(Ni0.8Co0.1Mn0.1)1-xMox]O2, wherein 0<x?0.05. Source liquid solutions of Li, Ni2+, Co2+, Mn2+, and Mo6+ are mixed in stoichiometric ratio in a multi-carboxylic acid solution to form a solution. The solution is heated at 50° C. to 80° C. to form a wet gel. The wet gel is spray dried to form a dry gel. The dry gel is heated at a first temperature and then at a second temperature, the first temperature is in a range of 400° C. to 500° C., the second temperature is in a range of 750° C. to 850° C.

Abstract: This antimony-doped tin oxide powder is an antimony-doped tin oxide powder characterized by: (A) including at least three kinds of ions selected from the group consisting of Sn2+, Sn4+, Sb3+ and Sb5+; (B) having a ratio of average Sn ionic radius to average Sb ionic radius of 1:(0.96 to 1.04); and (C) having an Sb content of 5 to 25 moles relative to a total of 100 moles of Sb and Sn, wherein the average Sn ionic radius is the average of ionic radii of Sn2+ and Sn4+, while the average Sb ionic radius is the average of ionic radii of Sb3+ and Sb5+.

Abstract: Semiconductor structures having a source contact and a drain contact that exhibit reduced contact resistance and methods of forming the same are disclosed. In one embodiment of the present application, the reduced contact resistance is provided by forming a layer of a dipole metal or metal-insulator-semiconductor (MIS) oxide between an epitaxial semiconductor material (providing the source region and the drain region of the device) and an overlying metal semiconductor alloy. In yet other embodiment, the reduced contact resistance is provided by increasing the area of the source region and drain region by patterning the epitaxial semiconductor material that constitutes at least an upper portion of the source region and drain region of the device.

Abstract: A cathode active material for a magnesium secondary battery, the cathode active material including a composite transition metal oxide which is expressed by Chemical Formula 1 and intercalates and deintercalates magnesium: MgxMa1?yMbyO2+d??Chemical Formula 1 wherein 0?x?1, 0.05?y<0.5, and ?0.3?d<1, and Ma and Mb are each independently a metal selected from the group consisting of Groups 5 to 12 of the Periodic Table.

Abstract: The present invention relates to a fluid phase method for producing indium oxide-containing layers, in which a composition comprising at least one indium oxo-alkoxide of the generic formula MxOy(OR)z[O(R?O)eH]aXbYc[R?OH]d with x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=1-20, d=0-25, e=0, 1, M=In, R, R?, R?=organic remainder, X?F, Cl, Br, I, and Y?—NO3, —NO2, where b+c is =1-20 and at least one solvent is applied to a substrate, optionally dried, and converted into an indium oxide-containing layer, to the indium oxo-alkoxides of the indicated generic formula, to coating compositions comprising said indium oxo-alkoxides, to layers that can be produced by means of the method according to the invention, and to the use of said layers.

Abstract: The present invention provides a nano complex oxide doped dielectric ceramic material used for a multilayer ceramic capacitor using a base metal as a material of internal electrodes. The doped dielectric ceramic material comprises barium titanate and a nano complex oxide dopant, wherein the molar ratio of the barium titanate to the nano complex oxide dopant is in the range of (90 to 98):(2 to 10), the average particle size of the barium titanate is 50 to 300 nm and the nano complex oxide dopant has the following formula (1): wA+xB+yC+zD. The present invention also provides processes for preparing the nano complex oxide doped dielectric ceramic material and ultrafine-grained and temperature-stable multilayer ceramic capacitors using the nano complex oxide doped dielectric ceramic material as a material of dielectric layers.

Abstract: An oxide semiconductor sputtering target which is used for depositing a thin film having high electron mobility and high operational reliability, a method of manufacturing thin-film transistors (TFTs) using the same, and a TFT manufactured using the same. The oxide semiconductor sputtering target is used in a sputtering process for depositing an active layer on a TFT. The oxide semiconductor sputtering target is made of a material based on a composition including indium (In), tin (Sn), gallium (Ga) and oxygen (O). The method includes the step of depositing an active layer using the above-described oxide semiconductor sputtering target. The thin-film transistor may be used in a display device, such as a liquid crystal display (LCD) or an organic light-emitting display (OLED).

Abstract: An interconnect material is formed by combining a lanthanum-doped strontium titanate with an aliovalent transition metal to form a precursor composition and sintering the precursor composition to form the interconnect material. The aliovalent transition metal can be an electron-acceptor dopant, such as manganese, cobalt, nickel or iron, or the aliovalent transition metal can be an electron-donor dopant, such as niobium or tungsten. A solid oxide fuel cell, or a strontium titanate varistor, or a strontium titanate capacitor can include the interconnect material that includes a lanthanum-doped strontium titanate that is further doped with an aliovalent transition metal.

Abstract: This disclosure relates to a method of densifying a lanthanide chromite ceramic or a mixture containing a lanthanide chromite ceramic. The method comprises mixing one or more lanthanide chromite ceramics with one or more sintering aids, and sintering the mixture. The one or more lanthanide chromite ceramics are represented by the formula (Ln1-xAEx)zCr1-yByO3-?, wherein Ln is a lanthanide element or yttrium, AE is one or more alkaline earth elements, B is one or more transition metals, x is a value less than 1, y is a value less than or equal to 0.5, and z is a value from 0.8 to 1.2. The sintering aids comprise one or more spinel oxides. The one or more spinel oxides are represented by the formula AB2O4 or A2BO4 wherein A and B are cationic materials having an affinity for B-site occupancy in a lanthanide chromite ceramic structure, e.g., ZnMn2O4, MgMn2O4, MnMn2O4 and CoMn2O4. This disclosure also relates in part to products, e.g., dense ceramic structures produced by the above method.

Abstract: A disclosed field effect transistor includes a gate electrode to which a gate voltage is applied, a source electrode and a drain electrode for acquiring a current in response to the gate voltage, an active layer provided adjacent to the source electrode and the drain electrode, the active layer being formed of an n-type oxide semiconductor, and a gate insulator layer provided between the gate electrode and the active layer. In the field effect transistor, the n-type oxide semiconductor is formed of an n-type doped compound having a chemical composition of a crystal phase obtained by introducing at least one of a trivalent cation, a tetravalent cation, a pentavalent cation and a hexavalent cation.

Abstract: The present disclosure provides a solution for a metal oxide semiconductor thin film, including metal hydroxides dissolved in an aqueous or nonaqueous solvent and an acid/base titrant for controlling solubility of metal hydroxides. A solution is synthesized to improve stability and semiconductive performance of a device through addition of other metal hydroxides. The solution is applied on a substrate and annealed by using various annealing apparatuses to obtain a high-quality metal oxide thin film at low temperatures. The thin film is optically transparent, and thus can be applied to thin films for various electronic devices, solar cells, various sensors, memory devices, and the like.

Abstract: Disclosed are metal-containing precursors having the formula Compound (I) wherein: —M is a metal selected from Ni, Co, Mn, Pd; and —each of R-1, R2, R3, R4, R5, R6, R7, R8, R9, and R10 are independently selected from H; a C1-C4 linear, branched, or cyclic alkyl group; a C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or tris alkyl); a C1-C4 linear, branched, or cyclic alkylamino group; or a C1-C4 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing and using the disclosed metal-containing precursors to deposit metal-containing films on a substrate via a vapor deposition process.

Abstract: Disclosed is a transparent conductive thin film and an electronic device including the same. The transparent conductive thin film may include a perovskite vanadium oxide represented by Chemical Formula 1, A1-xVO3±???[Chemical Formula 1] wherein A is a Group II element, 0?x<1, and ? is a number necessary for charge balance in the oxide.

Abstract: Provided is a sintered oxide compact that has high electric conductivity and a small B-value (temperature coefficient), and is suitable for use as an electrically conductive material, and a circuit board that uses the sintered oxide compact. The sintered oxide compact is represented by a composition formula: REaCobNicOx (where RE represents a rare earth element, a+b+c=1, and 1.3?x?1.7), the sintered oxide compact includes a perovskite phase with a perovskite-type oxide crystal structure, and the a, b, and c satisfy the following relationships: 0.459?a?0.535, 0.200?b?0.475, and 0.025?c?0.300.

Abstract: A sodium manganese composite oxide represented by Formula 1: NaxMayMnzMbvO2+d ??Formula 1 wherein, 0.2?x?1, 0<y?0.2, 0<z?1, 0?v<1, 0<z+v?1, ?0.3?d<1, Ma is an electrochemically inactive metal, and Mb is different from Ma and Mn, and is at least one transition metal selected from elements in Groups 4 to 12 of the periodic table of the elements.