Compound Viewed As Composition (i.e., Wherein Atoms Or Molecules In A Chemical Formula Are Not Present As Whole Small Integer Values Or Cannot Be Multiplied By A Single-digit Factor To Yield Integer Values) Patents (Class 252/519.1)
  • Patent number: 10032023
    Abstract: A computer-implemented method for selectively applying malware signatures may include (1) receiving a time-sensitive malware signature at a receiving time to apply to a computing environment, (2) identifying a first target object observed within the computing environment at a first observation time, (3) deactivating the time-sensitive malware signature with respect to the first target object based on a difference between the receiving time and the first observation time, (4) observing a second target object within the computing environment subject to malware scans, the second target object being observed within the computing environment at a second observation time that is later than the first observation time, and (5) activating the time-sensitive malware signature with respect to the second target object based on a difference between the receiving time and the second observation time. Various other methods, systems, and computer-readable media are also disclosed.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: July 24, 2018
    Assignee: Symantec Corporation
    Inventor: Chengi Kuo
  • Patent number: 9972765
    Abstract: A method of forming an electronic structural element having a stack including first and second electrode layers arranged alternatively with material layers is disclosed. A stack is formed with the first electrode layers projecting beyond a first lateral side of the stack and the second electrode layers spaced radially inward from the first lateral side. A first contacting structure that contacts each first electrode layer is applied directly to the first side of the stack, which contacting structure embeds such the projecting first electrode layers in an electrically conductive manner. A second contacting structure is formed by exposing the first and second electrode layers at a second side of the stack, forming, by an additive method, a solvent-free insulating structure that electrically insulates the first electrode layers, and applying an electrically conductive material over the solvent-free insulating structure to form the second contacting structure that contacts each second electrode layer.
    Type: Grant
    Filed: October 14, 2013
    Date of Patent: May 15, 2018
    Inventors: Thomas Richter, Claus Zumstrull
  • Patent number: 9881747
    Abstract: An ink of the formula: 60-80% by weight BaTiO3 particles coated with SiO2; 5-50% by weight high dielectric constant glass; 0.1-5% by weight surfactant; 5-25% by weight solvent; and 5-25% weight organic vehicle. Also a method of manufacturing a capacitor comprising the steps of: heating particles of BaTiO3 for a special heating cycle, under a mixture of 70-96% by volume N2 and 4-30% by volume H2 gas; depositing a film of SiO2 over the particles; mechanically separating the particles; incorporating them into the above described ink formulation; depositing the ink on a substrate; and heating at 850-900° C. for less than 5 minutes and allowing the ink and substrate to cool to ambient in N2 atmosphere. Also a dielectric made by: heating particles of BaTiO3 for a special heating cycle, under a mixture of 70-96% by volume N2 and 4-30% by volume H2 gas; depositing a film of SiO2 over the particles; mechanically separating the particles; forming them into a layer; and heating at 850-900° C.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: January 30, 2018
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Terry D. Rolin, Curtis W. Hill
  • Patent number: 9856147
    Abstract: The ceramic material of the present invention contains a crystalline phase of a complex oxide containing a Group II element M and a rare earth element RE. The Group II element M is Sr, Ca, or Ba. An XRD diagram of the ceramic material shows a first new peak between peaks derived from the (040) plane and the (320) plane of MRE2O4. Such a ceramic material may be manufactured by, for example, preparing a material containing MRE2O4 or a material capable of reacting in thermal spray flame to produce MRE2O4 as a thermal spray material, and thermally spraying the thermal spray material onto a predetermined object.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: January 2, 2018
    Assignee: NGK Insulators, Ltd.
    Inventors: Yosuke Sato, Katsuhiro Inoue, Yuji Katsuda
  • Patent number: 9790246
    Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.
    Type: Grant
    Filed: March 24, 2017
    Date of Patent: October 17, 2017
    Inventors: Sang-chul Youn, Gyu-hee Park, Youn-joung Cho, Haruyoshi Sato, Takanori Koide, Naoki Yamada, Akio Saito, Akihiro Nishida
  • Patent number: 9761733
    Abstract: After a sputtering gas is supplied to a deposition chamber, plasma including an ion of the sputtering gas is generated in the vicinity of a target. The ion of the sputtering gas is accelerated and collides with the target, so that flat-plate particles and atoms of the target are separated from the target. The flat-plate particles are deposited with a gap therebetween so that the flat plane faces a substrate. The atom and the aggregate of the atoms separated from the target enter the gap between the deposited flat-plate particles and grow in the plane direction of the substrate to fill the gap. A film is formed over the substrate. After the deposition, heat treatment is performed at high temperature in an oxygen atmosphere, which forms an oxide with a few oxygen vacancies and high crystallinity.
    Type: Grant
    Filed: November 30, 2015
    Date of Patent: September 12, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Haruyuki Baba, Akio Suzuki, Hiromi Sawai, Masahiko Hayakawa, Noritaka Ishihara, Masashi Oota
  • Patent number: 9698418
    Abstract: The invention relates to cathode materials for Li-ion batteries in the quaternary phase diagram Li[Li1/3Mn2/3]O2—LiMn1/2Ni1/2O2—LiNiO2—LiCoO2, and having a high nickel content. Also a method to manufacture these materials is disclosed. The cathode material has a general formula Lia ((Niz(Ni1/2Mn1/2)yCox)1?kAk)2?aO2, wherein x+y+z=1, 0.1?x?0.4, 0.36?z?0.50, A is a dopant, 0?k?0.1, and 0.95?a?1.05, and having a soluble base content (SBC) within 10% of the equilibrium soluble base content.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: July 4, 2017
    Assignee: Umicore
    Inventors: Jens Paulsen, JiHye Kim
  • Patent number: 9691973
    Abstract: A semiconductor device according to an embodiment includes a first conductive layer, a second conductive layer, and a dielectric film provided between the first and the second conductive layers. The dielectric film including a fluorite-type crystal and a positive ion site includes Hf and/or Zr, and a negative ion site includes O. In the dielectric film, parameters a, b, c, p, x, y, z, u, v and w satisfy a predetermined relation. The axis length of the a-axis, b-axis and c-axis of the original unit cell is a, b, and c, respectively. An axis in a direction with no reversal symmetry is c-axis, a stacking direction of atomic planes of two kinds formed by negative ions disposed at different positions is a-axis, the remainder is b-axis. The parameters x, y, z, u, v and w are values represented using the parameter p.
    Type: Grant
    Filed: September 2, 2015
    Date of Patent: June 27, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsunehiro Ino, Riichiro Takaishi, Koichi Kato, Yasushi Nakasaki, Takamitsu Ishihara, Daisuke Matsushita
  • Patent number: 9620783
    Abstract: Compositions and methods of making are provided for treated mesoporous metal oxide microspheres electrodes. The compositions include microspheres with an average diameter between about 200 nanometers and about 10 micrometers and mesopores on the surface and interior of the microspheres. The methods of making include forming a mesoporous metal oxide microsphere composition and treating the mesoporous metal oxide microspheres by at least annealing in a reducing atmosphere, doping with an aliovalent element, and coating with a coating composition.
    Type: Grant
    Filed: November 12, 2014
    Date of Patent: April 11, 2017
    Assignee: UT-Battelle, LLC
    Inventors: Mariappan Parans Paranthaman, Zhonghe Bi, Craig A. Bridges, Gilbert M. Brown
  • Patent number: 9598292
    Abstract: An oxide represented by Formula 1: (Sr2?xAx)(M1?yQy)D2O7+d,??Formula 1 wherein A is barium (Ba), M is at least one selected from magnesium (Mg) and calcium (Ca), Q is a Group 13 element, D is at least one selected from silicon (Si) and germanium (Ge), 0?x?2.0, 0<y?1.0, and d is a value which makes the oxide electrically neutral.
    Type: Grant
    Filed: January 16, 2014
    Date of Patent: March 21, 2017
    Inventors: Hee-jung Park, Chan Kwak, Tae-gon Kim, Sang-mock Lee, Doh-won Jung
  • Patent number: 9570745
    Abstract: A method for making a cathode active material of a lithium ion battery, the cathode active material being represented by a chemical formula of Li[(Ni0.8Co0.1Mn0.1)1-xMox]O2, wherein 0<x?0.05. Source liquid solutions of Li, Ni2+, Co2+, Mn2+, and Mo6+ are mixed in stoichiometric ratio in a multi-carboxylic acid solution to form a solution. The solution is heated at 50° C. to 80° C. to form a wet gel. The wet gel is spray dried to form a dry gel. The dry gel is heated at a first temperature and then at a second temperature, the first temperature is in a range of 400° C. to 500° C., the second temperature is in a range of 750° C. to 850° C.
    Type: Grant
    Filed: April 14, 2016
    Date of Patent: February 14, 2017
    Assignees: Jiangsu-Huadong Institute of Li-ion Battery Co. Ltd., Tsinghua University
    Inventors: Jian-Gang Li, Lei Wang, Xiang-Ming He, Li Wang, Jian-Jun Li, Jian Gao, Yu-Ming Shang
  • Patent number: 9513408
    Abstract: This antimony-doped tin oxide powder is an antimony-doped tin oxide powder characterized by: (A) including at least three kinds of ions selected from the group consisting of Sn2+, Sn4+, Sb3+ and Sb5+; (B) having a ratio of average Sn ionic radius to average Sb ionic radius of 1:(0.96 to 1.04); and (C) having an Sb content of 5 to 25 moles relative to a total of 100 moles of Sb and Sn, wherein the average Sn ionic radius is the average of ionic radii of Sn2+ and Sn4+, while the average Sb ionic radius is the average of ionic radii of Sb3+ and Sb5+.
    Type: Grant
    Filed: March 28, 2013
    Date of Patent: December 6, 2016
    Inventors: Shinya Shiraishi, Hirotoshi Umeda, Suzuo Sasaki
  • Patent number: 9406568
    Abstract: Semiconductor structures having a source contact and a drain contact that exhibit reduced contact resistance and methods of forming the same are disclosed. In one embodiment of the present application, the reduced contact resistance is provided by forming a layer of a dipole metal or metal-insulator-semiconductor (MIS) oxide between an epitaxial semiconductor material (providing the source region and the drain region of the device) and an overlying metal semiconductor alloy. In yet other embodiment, the reduced contact resistance is provided by increasing the area of the source region and drain region by patterning the epitaxial semiconductor material that constitutes at least an upper portion of the source region and drain region of the device.
    Type: Grant
    Filed: November 21, 2014
    Date of Patent: August 2, 2016
    Assignee: International Business Machines Corporation
    Inventors: Injo Ok, Balasubramanian Pranatharthiharan, Charan Veera Venkata Satya Surisetty
  • Patent number: 9325004
    Abstract: A cathode active material for a magnesium secondary battery, the cathode active material including a composite transition metal oxide which is expressed by Chemical Formula 1 and intercalates and deintercalates magnesium: MgxMa1?yMbyO2+d??Chemical Formula 1 wherein 0?x?1, 0.05?y<0.5, and ?0.3?d<1, and Ma and Mb are each independently a metal selected from the group consisting of Groups 5 to 12 of the Periodic Table.
    Type: Grant
    Filed: January 8, 2014
    Date of Patent: April 26, 2016
    Inventors: Won-seok Chang, Seok-soo Lee, Ju-sik Kim, Jae-myung Lee, Dong-wook Han
  • Patent number: 9293326
    Abstract: The present invention relates to a fluid phase method for producing indium oxide-containing layers, in which a composition comprising at least one indium oxo-alkoxide of the generic formula MxOy(OR)z[O(R?O)eH]aXbYc[R?OH]d with x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=1-20, d=0-25, e=0, 1, M=In, R, R?, R?=organic remainder, X?F, Cl, Br, I, and Y?—NO3, —NO2, where b+c is =1-20 and at least one solvent is applied to a substrate, optionally dried, and converted into an indium oxide-containing layer, to the indium oxo-alkoxides of the indicated generic formula, to coating compositions comprising said indium oxo-alkoxides, to layers that can be produced by means of the method according to the invention, and to the use of said layers.
    Type: Grant
    Filed: June 4, 2013
    Date of Patent: March 22, 2016
    Assignee: EVONIK DEGUSSA GmbH
    Inventors: Juergen Steiger, Dennis Fruehling, Alexey Merkulov, Arne Hoppe
  • Patent number: 9266781
    Abstract: The present invention provides a nano complex oxide doped dielectric ceramic material used for a multilayer ceramic capacitor using a base metal as a material of internal electrodes. The doped dielectric ceramic material comprises barium titanate and a nano complex oxide dopant, wherein the molar ratio of the barium titanate to the nano complex oxide dopant is in the range of (90 to 98):(2 to 10), the average particle size of the barium titanate is 50 to 300 nm and the nano complex oxide dopant has the following formula (1): wA+xB+yC+zD. The present invention also provides processes for preparing the nano complex oxide doped dielectric ceramic material and ultrafine-grained and temperature-stable multilayer ceramic capacitors using the nano complex oxide doped dielectric ceramic material as a material of dielectric layers.
    Type: Grant
    Filed: December 13, 2013
    Date of Patent: February 23, 2016
    Assignee: Tsinghua University
    Inventors: Xiaohui Wang, Zhibin Tian, Tian Wang, Longtu Li
  • Patent number: 9225024
    Abstract: An interconnect material is formed by combining a lanthanum-doped strontium titanate with an aliovalent transition metal to form a precursor composition and sintering the precursor composition to form the interconnect material. The aliovalent transition metal can be an electron-acceptor dopant, such as manganese, cobalt, nickel or iron, or the aliovalent transition metal can be an electron-donor dopant, such as niobium or tungsten. A solid oxide fuel cell, or a strontium titanate varistor, or a strontium titanate capacitor can include the interconnect material that includes a lanthanum-doped strontium titanate that is further doped with an aliovalent transition metal.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: December 29, 2015
    Inventors: Aravind Mohanram, Yeshwanth Narendar, Guangyong Lin
  • Patent number: 9224820
    Abstract: An oxide semiconductor sputtering target which is used for depositing a thin film having high electron mobility and high operational reliability, a method of manufacturing thin-film transistors (TFTs) using the same, and a TFT manufactured using the same. The oxide semiconductor sputtering target is used in a sputtering process for depositing an active layer on a TFT. The oxide semiconductor sputtering target is made of a material based on a composition including indium (In), tin (Sn), gallium (Ga) and oxygen (O). The method includes the step of depositing an active layer using the above-described oxide semiconductor sputtering target. The thin-film transistor may be used in a display device, such as a liquid crystal display (LCD) or an organic light-emitting display (OLED).
    Type: Grant
    Filed: May 29, 2013
    Date of Patent: December 29, 2015
    Assignee: Samsung Corning Advanced Glass, LLC
    Inventors: Jinjoo Ha, Seungju Lee, Joo Hye Oh, Johann Cho, Ju Ok Park, In Sung Sohn, Hyungrok Lee, Jin Woo Han
  • Patent number: 9115032
    Abstract: This disclosure relates to a method of densifying a lanthanide chromite ceramic or a mixture containing a lanthanide chromite ceramic. The method comprises mixing one or more lanthanide chromite ceramics with one or more sintering aids, and sintering the mixture. The one or more lanthanide chromite ceramics are represented by the formula (Ln1-xAEx)zCr1-yByO3-?, wherein Ln is a lanthanide element or yttrium, AE is one or more alkaline earth elements, B is one or more transition metals, x is a value less than 1, y is a value less than or equal to 0.5, and z is a value from 0.8 to 1.2. The sintering aids comprise one or more spinel oxides. The one or more spinel oxides are represented by the formula AB2O4 or A2BO4 wherein A and B are cationic materials having an affinity for B-site occupancy in a lanthanide chromite ceramic structure, e.g., ZnMn2O4, MgMn2O4, MnMn2O4 and CoMn2O4. This disclosure also relates in part to products, e.g., dense ceramic structures produced by the above method.
    Type: Grant
    Filed: February 23, 2012
    Date of Patent: August 25, 2015
    Inventors: Matthew M. Seabaugh, Scott Lawrence Swartz
  • Patent number: 9105473
    Abstract: A disclosed field effect transistor includes a gate electrode to which a gate voltage is applied, a source electrode and a drain electrode for acquiring a current in response to the gate voltage, an active layer provided adjacent to the source electrode and the drain electrode, the active layer being formed of an n-type oxide semiconductor, and a gate insulator layer provided between the gate electrode and the active layer. In the field effect transistor, the n-type oxide semiconductor is formed of an n-type doped compound having a chemical composition of a crystal phase obtained by introducing at least one of a trivalent cation, a tetravalent cation, a pentavalent cation and a hexavalent cation.
    Type: Grant
    Filed: February 15, 2011
    Date of Patent: August 11, 2015
    Assignee: RICOH COMPANY, LTD.
    Inventors: Naoyuki Ueda, Yuki Nakamura, Yuji Sone, Yukiko Abe
  • Publication number: 20150137115
    Abstract: The present disclosure provides a solution for a metal oxide semiconductor thin film, including metal hydroxides dissolved in an aqueous or nonaqueous solvent and an acid/base titrant for controlling solubility of metal hydroxides. A solution is synthesized to improve stability and semiconductive performance of a device through addition of other metal hydroxides. The solution is applied on a substrate and annealed by using various annealing apparatuses to obtain a high-quality metal oxide thin film at low temperatures. The thin film is optically transparent, and thus can be applied to thin films for various electronic devices, solar cells, various sensors, memory devices, and the like.
    Type: Application
    Filed: March 4, 2011
    Publication date: May 21, 2015
    Applicant: Industry-Academic Cooperation Foundation, Yonsei University
    Inventors: Jooho Moon, Youngmin Jeong, Tae Hwan Jun, Keun Kyu Song, Areum Kim, Yangho Jung
  • Patent number: 9034761
    Abstract: Disclosed are metal-containing precursors having the formula Compound (I) wherein: —M is a metal selected from Ni, Co, Mn, Pd; and —each of R-1, R2, R3, R4, R5, R6, R7, R8, R9, and R10 are independently selected from H; a C1-C4 linear, branched, or cyclic alkyl group; a C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or tris alkyl); a C1-C4 linear, branched, or cyclic alkylamino group; or a C1-C4 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing and using the disclosed metal-containing precursors to deposit metal-containing films on a substrate via a vapor deposition process.
    Type: Grant
    Filed: June 29, 2012
    Date of Patent: May 19, 2015
    Assignees: L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.
    Inventors: Clément Lansalot-Matras, Andrey V. Korolev
  • Publication number: 20150123046
    Abstract: Disclosed is a transparent conductive thin film and an electronic device including the same. The transparent conductive thin film may include a perovskite vanadium oxide represented by Chemical Formula 1, A1-xVO3±???[Chemical Formula 1] wherein A is a Group II element, 0?x<1, and ? is a number necessary for charge balance in the oxide.
    Type: Application
    Filed: October 30, 2014
    Publication date: May 7, 2015
    Inventors: Doh Won JUNG, Hee Jung PARK, Chan KWAK, Byungki RYU, Kyu Hyoung LEE
  • Publication number: 20150099142
    Abstract: Provided is a sintered oxide compact that has high electric conductivity and a small B-value (temperature coefficient), and is suitable for use as an electrically conductive material, and a circuit board that uses the sintered oxide compact. The sintered oxide compact is represented by a composition formula: REaCobNicOx (where RE represents a rare earth element, a+b+c=1, and 1.3?x?1.7), the sintered oxide compact includes a perovskite phase with a perovskite-type oxide crystal structure, and the a, b, and c satisfy the following relationships: 0.459?a?0.535, 0.200?b?0.475, and 0.025?c?0.300.
    Type: Application
    Filed: April 2, 2013
    Publication date: April 9, 2015
    Inventors: Hisashi Kozuka, Tomoko Hishida, Hideto Yamada, Kazushige Ohbayashi
  • Publication number: 20150093644
    Abstract: A sodium manganese composite oxide represented by Formula 1: NaxMayMnzMbvO2+d ??Formula 1 wherein, 0.2?x?1, 0<y?0.2, 0<z?1, 0?v<1, 0<z+v?1, ?0.3?d<1, Ma is an electrochemically inactive metal, and Mb is different from Ma and Mn, and is at least one transition metal selected from elements in Groups 4 to 12 of the periodic table of the elements.
    Type: Application
    Filed: September 29, 2014
    Publication date: April 2, 2015
    Inventors: Dongwook Han, Seoksoo Lee, Guesung Kim, Ryounghee Kim, Kwangjin Park, Wonseok Chang
  • Patent number: 8986851
    Abstract: A heat shielding material and method for manufacturing thereof is provided. The method for manufacturing the heat shielding material, includes: providing a tungsten oxide precursor solution containing a group VIII B metal element; drying the tungsten oxide precursor solution to form a dried tungsten oxide precursor; and subjecting the dried tungsten oxide precursor to a reducing gas at a temperature of 100° C. to 500° C. to form a composite tungsten oxide. The heat shielding material includes composite tungsten oxide doped with a group I A or II A metal and halogen, represented by MxWOy or MxWOyAz, wherein M refers to at least one of a group I A or II A metal, W refers to tungsten, O refers to oxygen, and A refers to a halogen element. The heat shielding material also includes a group VIII B metal element.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: March 24, 2015
    Assignee: Industrial Technology Research Institute
    Inventors: Huai-Kuang Fu, Sung-Jeng Jong, Jer-Young Chen, Yih-Her Chang, Pao-Tang Chung
  • Patent number: 8986570
    Abstract: The present invention discloses a method for producing a positive electrode active material for a lithium secondary battery constituted by a lithium-nickel-cobalt-manganese complex oxide with a lamellar structure, the method including: (1) a step of preparing a starting source material for producing the complex oxide including a lithium supply source, a nickel supply source, a cobalt supply source, and a manganese supply source; (2) a step of pre-firing the starting source material by heating at a pre-firing temperature that has been set to a temperature lower than 800° C. and higher than a melting temperature of the lithium supply source; and (3) a step of firing the pre-fired material obtained in the pre-firing step by raising a temperature to a temperature range higher than the pre-firing temperature.
    Type: Grant
    Filed: December 14, 2009
    Date of Patent: March 24, 2015
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Hiroki Nagai, Hidekazu Hiratsuka
  • Patent number: 8980125
    Abstract: An active material for a nonaqueous electrolyte secondary battery includes first particles and second particles provided to coat the first particles so as to be scattered on the surfaces of the first particles. The circularity of the first particles coated with the second particles is 0.800 to 0.950, and the ratio r1/r2 of the average particle diameter r1 of the second particles to the average particle diameter r2 of the first particles is 1/20 to 1/2.
    Type: Grant
    Filed: April 23, 2010
    Date of Patent: March 17, 2015
    Assignee: Sony Corporation
    Inventor: Kazuaki Endoh
  • Publication number: 20150060743
    Abstract: Perovskite related compound of the present invention have layered structures in which perovskite units and A-rare earth structure units are alternately arranged. The reduced cell parameters ar-cr and ?r-?r and the reduced cell volume Vr are within the following ranges: ar=6.05±0.6 ?, br=8.26±0.8 ?, cr=9.10±0.9 ?, ?r=103.4±10°, ?r=90±10°, ?r=90±10°, and Vr=442.37±67 ?3. At least one of the reduced cell parameters ar-cr can be m/n times as large as the aforementioned values, where m and n are independent natural numbers, the square roots of 2 or 3 or integral multiples thereof. Values of ar, br and cr can be replaced with one another, or values of ?r, ?r and ?r can be replaced with one another.
    Type: Application
    Filed: July 9, 2014
    Publication date: March 5, 2015
    Inventors: Masatomo Yashima, Kotaro Fuji, Kazuki Omoto, Yuichi Esaki, Chihiro Saito
  • Publication number: 20150064580
    Abstract: Compositions and methods of making compositions are provided for nitride- and/or oxide-modified electrode compositions. In certain embodiments, the nitride- and/or oxide-modified compositions have the general formula M1?zM?zOaF3?xNy. Such compositions may be used as bulk or surface compositions, and used in a battery as the anode or cathode. In other embodiments, the electrode includes a surface coating composition selected from metal nitrides and metal oxides, and a core composition having the formula M1?zM?zOaF3?x, or an oxide fluoride.
    Type: Application
    Filed: August 29, 2014
    Publication date: March 5, 2015
    Applicant: UT-BATTELLE, LLC
    Inventors: Craig A. Bridges, Mariappan Parans Paranthaman, Gabriel M. Veith, Zhonghe Bi
  • Publication number: 20150053898
    Abstract: To provide a composite oxide powder for a solid oxide fuel cell containing lanthanum, strontium and/or calcium, manganese and oxygen and having a highly uniform composition, and its production method. A composite oxide powder containing lanthanum, strontium and/or calcium, manganese and oxygen, wherein the coefficient of variation (?) of lanthanum is at most 6.0% and the coefficient of variation (?) of manganese is at most 13.0%, as calculated from the peak area ratio of the L? ray of lanthanum and the K? ray of manganese measured by an energy dispersive X-ray spectrometer attached to a scanning electron microscope.
    Type: Application
    Filed: July 22, 2014
    Publication date: February 26, 2015
    Inventors: Futoshi NADA, Takene HIRAI
  • Publication number: 20150048280
    Abstract: A method for manufacturing a nanostructured metal oxide calcinate suitable for biosensor through a procedure of redox reaction is disclosed in this invention. The nanostructured metal oxide calcinate is free of impurities and produced with better electrocatalytic activity and better conductivity. Thus, an electrode of biosensor can be modified via the nanostructured metal oxide calcinate. The method for manufacturing the nanostructured metal oxide calcinate includes: disposing a first metal material and a second metal material into a reaction slot and making the first metal material and the second metal material dissolved within a solvent to form a mixture, wherein the pH value of the mixture ranges between 0 to 7, the mixture performs a redox reaction process for obtaining a metal oxide material; and eventually calcining the metal oxide material for obtaining a nanostructured metal oxide calcinate.
    Type: Application
    Filed: December 11, 2013
    Publication date: February 19, 2015
    Inventors: Chun-Hu Chen, Cheng-Chi Kuo, Wen-Jie Lan
  • Publication number: 20150048281
    Abstract: An oxide film according to this invention is a film of an oxide (possibly including inevitable impurities) containing silver (Ag) and nickel (Ni). This oxide film is an aggregate of microcrystals, an amorphous form including microcrystals, or an amorphous form and has p-type conductivity, which exhibits no clear diffraction peak with the XRD analysis, as seen in a chart in FIG. 3 indicating X-ray diffraction (XRD) analysis results of a first oxide film and a second oxide film. This oxide film achieves a broader bandgap than that of a conventional oxide film as well as high p-type conductivity. This oxide film is an aggregate of microcrystals, an amorphous form containing microcrystals, or an amorphous form as described above, and is thus easily formed on a large substrate and is suitable also for industrial production.
    Type: Application
    Filed: March 1, 2013
    Publication date: February 19, 2015
    Applicant: Ryukoku University
    Inventors: Seiji Yamazoe, Takahiro Wada
  • Publication number: 20150048282
    Abstract: The present invention relates to a transparent compound semiconductor and to a production method therefor, and is adapted to provide a transparent compound semiconductor of high stability and charge mobility while being transparent. The transparent compound semiconductor according to the present invention has a composition of Ba1?XLaXSnO3 (0<x<0.1) and has a charge mobility of at least 10 cm2/V·sec.
    Type: Application
    Filed: April 5, 2013
    Publication date: February 19, 2015
    Inventors: Kookrin Char, Jisoon Ihm
  • Publication number: 20150041732
    Abstract: This invention relates to a ceramic composition, which is suitable for use in DOC and DPF for removing nitrogen oxide, carbon monoxide and unburned particles from exhaust gas systems of vehicles or for use in a thermistor temperature sensor for an industrial high-temperature environment similar thereto, and to a thermistor device manufactured using the composition. The ceramic composition is prepared by adding a perovskite phase having a perovskite crystalline structure represented by ABO3 with Sn of Group 4B or Sb or Bi of Group 5B, wherein A includes at least one element selected from among Groups 2A and 3A elements except for LA, and B includes at least one element selected from among transition metals of Groups 4A, 5A, 6A, 7A, 8A, 2B and 3B.
    Type: Application
    Filed: October 24, 2014
    Publication date: February 12, 2015
    Inventors: Choon Sik Kim, Jae Moon Jung
  • Patent number: 8952302
    Abstract: The present invention relates to a ceramic-coated heater in which the outer surface of a heater rod is coated with ceramic to improve the physical properties thereof including durability, corrosion resistance, and the like, thereby enabling the heater to be used in water or air. The outer surface of the heater rod is coated with a ceramic composition to which an acrylic corrosion resistant wax is added, thereby strengthening the bonding force of the coating layer film, and thus improving the physical properties thereof including durability, corrosion resistance, and the like to enable the heater to be used in water. Therefore, the ceramic-coated heater of the present invention enables high thermal conductivity using less current and reduces energy consumption so that it can be utilized in a wide variety of industrial fields.
    Type: Grant
    Filed: December 1, 2009
    Date of Patent: February 10, 2015
    Assignee: Thermolon Korea Co., Ltd.
    Inventor: Chung Kwon Park
  • Publication number: 20150014605
    Abstract: The amount of lithium ions that can be received and released in and from a positive electrode active material is increased, and high capacity and high energy density of a secondary battery are achieved. Provided is a lithium-manganese composite oxide represented by LixMnyMzOw, where M is a metal element other than Li and Mn, or Si or P, and y, z, and w satisfy 0?x/(y+z)<2, y>0, z>0, 0.26?(y+z)/w<0.5, and 0.2<z/y<1.2. The lithium manganese composite oxide has high structural stability and high capacity.
    Type: Application
    Filed: June 30, 2014
    Publication date: January 15, 2015
    Inventors: Takahiro KAWAKAMI, Shuhei YOSHITOMI, Teruaki OCHIAI, Yumiko SAITO, Yohei MOMMA, Satoshi SEO, Mayumi MIKAMI, Shunsuke ADACHI
  • Patent number: 8932481
    Abstract: A cathode active material includes a core including a material having an olivine structure, and a nitrogen atom doped into at least a portion of the core.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: January 13, 2015
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Kyu-sung Park, Young-min Choi
  • Patent number: 8932495
    Abstract: Embodiments of the invention generally provide hydrogen-doped and/or fluorine-doped transparent conducting oxide (TCO) materials and processes for forming such doped TCO materials. In one embodiment, a method for fabricating a doped TCO on a substrate surface includes forming a TCO material on a substrate, exposing the TCO material to a hydrogen plasma while forming a hydrogen-doped TCO material during an atmospheric pressure plasma (APP) process, wherein the hydrogen-doped TCO material contains atomic hydrogen at a concentration within a range from about 1 at % (atomic percent) to about 30 at %, and exposing the hydrogen-doped TCO material to a thermal annealing process. In another embodiment, the method includes exposing the TCO material to a fluorine plasma while forming a fluorine-doped TCO material during the APP process, wherein the fluorine-doped TCO material contains atomic fluorine at a concentration within a range from about 1 at % to about 30 at %.
    Type: Grant
    Filed: March 12, 2012
    Date of Patent: January 13, 2015
    Assignee: Clearist, Inc.
    Inventors: Paul Phong Nguyen, Scott Allen Jewhurst
  • Patent number: 8932781
    Abstract: Embodiments of the present disclosure include chemical compositions, structures, anodes, cathodes, electrolytes for solid oxide fuel cells, solid oxide fuel cells, fuel cells, fuel cell membranes, separation membranes, catalytic membranes, sensors, coatings for electrolytes, electrodes, membranes, and catalysts, and the like, are disclosed.
    Type: Grant
    Filed: October 30, 2009
    Date of Patent: January 13, 2015
    Assignee: Georgia Tech Research Corporation
    Inventors: Lei Yang, Zhe Cheng, Ze Liu, Meilin Liu
  • Patent number: 8920687
    Abstract: Provided is a cathode active material for nonaqueous electrolyte rechargeable batteries which allows production of batteries having improved load characteristics with stable quality, and also allows production of batteries having high capacity. Also provided are a cathode for nonaqueous electrolyte rechargeable batteries and a nonaqueous electrolyte rechargeable battery. The cathode active material includes secondary particles each composed of a plurality of primary particles, and/or single crystal grains, and has a specific surface area of not smaller than 20 m2/g and smaller than 0.50 m2/g, wherein average number A represented by formula (1) is not less than 1 and not more than 10: A=(m+p)/(m+s) (m: the number of single crystal grains; p: the number of primary particles composing the secondary particles; s: the number of secondary particles).
    Type: Grant
    Filed: December 26, 2007
    Date of Patent: December 30, 2014
    Assignee: Santoku Corporation
    Inventors: Tetsu Fujiwara, Masayuki Moritaka, Akihito Kaneko
  • Publication number: 20140377479
    Abstract: The invention provides a transparent conducting film which comprises a compound of formula (I): Zn1-x[M]xO1-y[X]y(I) wherein: x is greater than 0 and less than or equal to 0.25; y is from 0 to 0.1; [X] is at least one dopant element which is a halgen; and [M] is: (a) a dopant element which is selected from: a group 14 element other than carbon; a lanthanide element which has an oxidation state of +4; and a transition metal which has an oxidation state of +4 and which is other than Ti or Zr; or (b) a combination of two or more different dopant elements, at least one of which is selected from: a group 14 element other than carbon; a lanthanide element which has an oxidation state of +4; and a transition metal which has an oxidation state of +4 and which is other than Ti or Zr. The invention further provides coatings comprising the films of the invention, processes for producing such films and coatings, and various uses of the films and coatings.
    Type: Application
    Filed: September 11, 2014
    Publication date: December 25, 2014
    Inventors: Peter P. EDWARDS, Martin JONES, Malek Moshari AL-MAMOURI, John Stuart ABELL
  • Patent number: 8894889
    Abstract: A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film.
    Type: Grant
    Filed: May 9, 2013
    Date of Patent: November 25, 2014
    Assignee: Neo Solar Power Corp.
    Inventors: Feng-Yu Yang, Ching Ting, Yueh-Chun Liao
  • Publication number: 20140332735
    Abstract: The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.
    Type: Application
    Filed: November 29, 2012
    Publication date: November 13, 2014
    Inventors: Hideto Kuramochi, Kimiaki Tamano, Hitoshi Ilgusa, Ryo Akiike, Tetsuo Shibutami
  • Publication number: 20140308583
    Abstract: The disclosure relates to an anode material for a sodium-ion battery having the general formula AOx—C or ACx—C, where A is aluminum (Al), magnesium (Mg), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), zirconium (Zr), molybdenum (Mo), tungsten (W), niobium (Nb), tantalum (Ta), silicon (Si), or any combinations thereof. The anode material also contains an electrochemically active nanoparticles within the matrix. The nanoparticle may react with sodium ion (Na+) when placed in the anode of a sodium-ion battery. In more specific embodiments, the anode material may have the general formula MySb-M?Ox—C, Sb-MOx—C, MySn-M?Cx—C, or Sn-MCx—C. The disclosure also relates to rechargeable sodium-ion batteries containing these materials and methods of making these materials.
    Type: Application
    Filed: April 15, 2014
    Publication date: October 16, 2014
    Inventors: Arumugam Manthiram, II Tae Kim, Eric Allcorn
  • Patent number: 8852452
    Abstract: A lithium transition metal oxide powder for use in a rechargeable battery is disclosed, where the surface of the primary particles of said powder is coated with a LiF layer, where this layer consists of a reaction product of a fluorine-containing polymer and the primary particle surface. The lithium of the LiF originates from the primary particles surface. Examples of the fluorine-containing polymer are either one of PVDF, PVDF-HFP or PTFE. Examples of the lithium transition metal oxide are either one of —LiCodMeO2, wherein M is either one of both of Mg and Ti, with e<0.02 and d+e=1; —Li1+aM?1?aO2±bM1kSm with ?0.03<a<0.06, b<0.02, M? being a transition metal compound, consisting of at least 95% of either one or more elements of the group Ni, Mn, Co and Ti; M1 consisting of either one or more elements of the group Ca, Sr, Y, La, Ce and Zr, with 0?k?0.1 in wt %; and 0<m<0.6, m being expressed in mol %; and —LiaNixCOyM?zO2±eAf, with 0.9<a?<1.1, 0.5?x?0.9, 0<y?0.4, 0<z?0.35, e<0.
    Type: Grant
    Filed: October 19, 2010
    Date of Patent: October 7, 2014
    Assignee: Umicore
    Inventors: Jens Paulsen, Randy De Palma, HeonPyo Hong, KyuBo Kim
  • Patent number: 8852464
    Abstract: Electrically conducting vanadium arsenate or vanadium phosphate materials are described. The materials include a vanadium arsenate or vanadium phosphate framework structure about organic template and water molecules which may be removed to leave a microporous structure. The three-dimensional vanadium framework may provide electronic conductivity, while the extra-framework constituents may provide ionic conductivity.
    Type: Grant
    Filed: November 10, 2009
    Date of Patent: October 7, 2014
    Assignee: Virginia Tech Intellectual Properties, Inc.
    Inventors: Victoria Soghomonian, Jean J. Heremans
  • Publication number: 20140291588
    Abstract: Provided are a mixed cathode active material having improved power characteristics and safety, and a lithium secondary battery including the same. More particularly, the present invention relates to a mixed cathode active material which may assist power in a low SOC range to widen an available state of charge (SOC) range and may simultaneously provide improved safety by blending substituted LFP, in which operating voltage is adjusted by substituting a portion of iron (Fe) with other elements such as titanium (Ti), in order to prevent a rapid increase in resistance of manganese (Mn)-rich having high capacity but low operating voltage in a low SOC range (e.g., a SOC range of 10% to 40%), and a lithium secondary battery including the mixed cathode active material.
    Type: Application
    Filed: June 18, 2014
    Publication date: October 2, 2014
    Inventors: Song Taek Oh, Sang Uck Lee, Su Rim Lee, Geun Chang Chung, Jae Kook Kim, Jin Sub Lim
  • Patent number: 8834740
    Abstract: A polycrystalline cobalt-nickel-manganese ternary positive material is provided. The polycrystalline cobalt-nickel-manganese ternary positive material comprises more than two basic crystalline structures of Liz—CoO2, LizNiO2, LizMnO2, LizCo1-(x+y)NixMnyO2, LizNixMn1-xO2, LizCoxNi1-xO2 and Li2MnO3. Further, a method for preparing the positive material by high-temperature fusion is provided. The positive material has the compacted density of 3.9-4.3 g/cm3, the capacity of 145 mAh/g or more when the discharging rate is 0.5-1C and the capacity retention rate of more than 90% after 300 cycles. The positive material prepared by high-temperature fusion has high volume energy density, excellent electrochemical performance, and improved safety and is manufactured economically. Further, a lithium ion secondary battery comprising the positive material is provided.
    Type: Grant
    Filed: October 26, 2010
    Date of Patent: September 16, 2014
    Assignees: Shenzhen Zhenhua New Material Co., Ltd., Guizhou Zhenhua New Material Co., Ltd.
    Inventors: Qianxin Xiang, Xiaolian Zhao
  • Patent number: 8821767
    Abstract: A cathode active material is provided by which excellent charge and discharge properties in a high-current range can be obtained when used in non-aqueous electrolyte secondary batteries. The cathode active material consists of a mixed metal fluoride represented by the general formula Fe(1-x)MxF3. M is a metal element selected from the group consisting of Y, Mn, Cu, Zn, and Cr. x is 0.01?x?0.15.
    Type: Grant
    Filed: August 8, 2013
    Date of Patent: September 2, 2014
    Assignee: Honda Motor Co., Ltd.
    Inventors: Kaoru Omichi, Yuji Isogai, Yuki Ito