Bismuth, Ruthenium, Or Iridium Containing Patents (Class 252/519.13)
  • Patent number: 9634218
    Abstract: The present invention provides a method for synthesizing a Bi2TeySe3-y thermoelectric nanocompound (0<y<3), comprising the following steps: preparing a Bi—Te—Se solution by adding Bi, Te, and Se precursors to a solvent (step 1); preparing a hydrate by mixing the Bi—Te—Se solution prepared in step 1) with a base aqueous solution (step 2); preparing a Bi2TeySe3-y reactant by liquid phase reduction at room temperature after adding a reducing agent to the hydrate prepared in step 2) (step 3); aging the Bi2TeySe3-y reactant prepared in step 3) (step 4); and preparing Bi2TeySe3-y nanoparticles by filtering and drying the Bi2TeySe3-y reactant aged in step 4) (step 5). The Bi2TeySe3-y thermoelectric nanocompound synthesized by the method of the present invention via liquid phase reduction is composed of regular nanoparticles since the method does not need any additional heat-treatment to eliminate chemical additives and prevents particles from being over-grown.
    Type: Grant
    Filed: April 25, 2014
    Date of Patent: April 25, 2017
    Assignee: DAEGU GYEONGBUK INSTITUTE OF SCIENCE & TECHNOLOGY
    Inventors: Cham Kim, Dong Hwan Kim, Jong Tae Kim, Ji Hyeon Ahn, Ho Young Kim
  • Patent number: 9395259
    Abstract: In a MEMS PRT having a diaphragm that is located offset from the center of the die, thermally-induced thermal noise in the output of a Wheatstone bridge circuit is reduced by locating the Wheatstone bridge circuit away from the largest area of the die and supporting pedestal.
    Type: Grant
    Filed: October 23, 2013
    Date of Patent: July 19, 2016
    Assignee: Continental Automotive Systems, Inc.
    Inventors: Jen-Huang Albert Chiou, Xiaoyi Ding, Shiuh-Hui Steven Chen, Jeffrey J. Frye
  • Patent number: 9011713
    Abstract: Provided are a composite including a lithium titanium oxide and a bismuth titanium oxide, a method of manufacturing the composite, an anode active material including the composite, an anode including the anode active material, and a lithium secondary battery having improved cell performance by including the anode.
    Type: Grant
    Filed: March 14, 2012
    Date of Patent: April 21, 2015
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Min-sang Song, Kyu-sung Park, Gue-sung Kim, Young-min Choi
  • Publication number: 20150053899
    Abstract: Thermoelectric conversion materials, expressed by the following formula: Bi1-xMxCu1-wOa-yQ1yTeb-zQ2z. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0?x<1, 0<w<1, 0.2<a<4, 0?y<4, 0.2<b<4, 0?z<4 and x+y+z>0. These thermoelectric conversion materials may be used for thermoelectric conversion elements, where they may replace thermoelectric conversion materials in common use, or be used along with thermoelectric conversion materials in common use.
    Type: Application
    Filed: August 27, 2014
    Publication date: February 26, 2015
    Inventors: Cheol-Hee PARK, Se-Hui SOHN, Seung-Tae HONG, Won-Jong KWON, Tae-Hoon KIM
  • Publication number: 20150041732
    Abstract: This invention relates to a ceramic composition, which is suitable for use in DOC and DPF for removing nitrogen oxide, carbon monoxide and unburned particles from exhaust gas systems of vehicles or for use in a thermistor temperature sensor for an industrial high-temperature environment similar thereto, and to a thermistor device manufactured using the composition. The ceramic composition is prepared by adding a perovskite phase having a perovskite crystalline structure represented by ABO3 with Sn of Group 4B or Sb or Bi of Group 5B, wherein A includes at least one element selected from among Groups 2A and 3A elements except for LA, and B includes at least one element selected from among transition metals of Groups 4A, 5A, 6A, 7A, 8A, 2B and 3B.
    Type: Application
    Filed: October 24, 2014
    Publication date: February 12, 2015
    Inventors: Choon Sik Kim, Jae Moon Jung
  • Patent number: 8946126
    Abstract: A precursor material for the preparation of superconductors based on Bi2Sr2Ca1Cu2O8+? wherein the precursor material which is as close to equilibrium state as possible, i.e., has less than 5% in average 2201 intergrowths in the 2212 phase; in particular, the present invention relates to a precursor material, which is converted to the final conductor by partial melt processing, as well as to a process for the production of the precursor material and the use of the precursor material for preparing superconductors based on Bi2Sr2Ca1Cu2O8+?.
    Type: Grant
    Filed: November 21, 2005
    Date of Patent: February 3, 2015
    Assignee: Nexans
    Inventors: Joachim Bock, Jurgen Ehrenberg, Mark Rikel
  • Patent number: 8920686
    Abstract: A radiation converter material includes a semiconductor material used for directly converting radiation quanta into electrical charge carriers. In at least one embodiment, the semiconductor material includes a dopant in a dopant concentration and defect sites produced in a process-dictated manner in such a way that the semiconductor material includes an ohmic resistivity in a range of between 5·107 ?·cm and 2·109 ?·cm. Such a radiation converter material is particularly well matched to the requirements in particular in human-medical applications with regard to the high flux rate present and the spectral distribution of the radiation quanta. In at least one embodiment, the invention additionally relates to a radiation converter and a radiation detector, and a use of and a method for producing such a radiation converter material.
    Type: Grant
    Filed: January 28, 2011
    Date of Patent: December 30, 2014
    Assignee: Siemens Aktiengesellschaft
    Inventors: Peter Hackenschmied, Christian Schröter, Matthias Strassburg
  • Patent number: 8828277
    Abstract: A method of producing a nanocomposite thermoelectric conversion material includes preparing a solution that contains salts of a plurality of first elements constituting a thermoelectric conversion material, and a salt of a second element that has a redox potential lower than redox potentials of the first elements; precipitating the first elements, thereby producing a matrix-precursor that is a precursor of a matrix made of the thermoelectric conversion material, by adding a reducing agent to the solution; precipitating the second element in the matrix-precursor, thereby producing slurry containing the first elements and the second element, by further adding the reducing agent to the solution; and alloying the plurality of the first elements, thereby producing the matrix (70) made of the thermoelectric conversion material, and producing nano-sized phonon-scattering particles (80) including the second element, which are dispersed in the matrix (70), by filtering and washing the slurry, and then, heat-treating t
    Type: Grant
    Filed: June 18, 2010
    Date of Patent: September 9, 2014
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Junya Murai, Takuji Kita
  • Patent number: 8815125
    Abstract: A method of manufacturing a resistor paste comprising steps of: (a) preparing a basic resistor paste comprising, (i) a conductive powder, (ii) a first glass frit, and (iii) a first organic medium; and (b) preparing a glass paste as a TCR driver comprising, (iv) a second glass frit comprising manganese oxide, and (v) a second organic medium, (c) adding the glass paste to the basic resistor paste to obtain a resistor paste with a desired TCR.
    Type: Grant
    Filed: June 20, 2012
    Date of Patent: August 26, 2014
    Assignee: E. I. du Pont de Nemours and Company
    Inventor: Yuko Ogata
  • Patent number: 8771559
    Abstract: A conductive sintered oxide which includes: a conductive crystal phase having a perovskite structure represented by (RE1-cSrc)MdO3, in which RE is a group of elements consisting of Yb and/or Lu and at least one element selected from Group IIIA elements excluding Yb, Lu and La, and M is a group of elements consisting of Al and at least one element selected from Groups IVA, VA, VIA, VIIA and VIII, a first insulating crystal phase represented by RE2O3, and a second insulating crystal phase represented by SrAl2O4. The conductive crystal phase has a coefficient c satisfying 0.18<c<0.50 and has a coefficient d satisfying 0.67?d?0.93. A content of a third insulating crystal phase represented by RE4Al2O9, the content of which may be zero, is smaller than the content of each of the first and second insulating crystal phases.
    Type: Grant
    Filed: August 16, 2011
    Date of Patent: July 8, 2014
    Assignee: NGK Spark Plug Co., Ltd.
    Inventors: Hiroshi Watanabe, Yasuyuki Okimura, Shinji Ban, Takeshi Mitsuoka
  • Publication number: 20140174494
    Abstract: A thermoelectric material including a compound represented by Formula 1: MxBiy?aAaSez?bQb ??Formula 1 wherein, 1<x<2, 4<y?a<5, 7<z?b<9, 0?a<5, and 0?b<9; M is at least one transition metal element; A is at least one element of Groups 13 to 15; and Q is at least one element of Groups 16 to 17.
    Type: Application
    Filed: November 1, 2013
    Publication date: June 26, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jung-young CHO, Sang-il KIM, Sung-woo HWANG, Jong-wook ROH, Kyu-hyoung LEE
  • Publication number: 20140106549
    Abstract: A deposition process to form a conformal phase change material film on the surface of a substrate to produce a memory device wafer comprises providing a substrate to a chamber of a deposition system; providing an activation region; introducing one or more precursors into the chamber upstream of the substrate; optionally introducing one or more co-reactants upstream of the substrate; activating the one or more precursors; heating the substrate; and depositing the phase change material film on the substrate from the one or more precursors by chemical vapor deposition. The deposited phase change material film comprises GexSbyTezAm in which A is a dopant selected from the group of N, C, In, Sn, and Se. In one implementation, the process is carried out to form GST films doped with carbon and nitrogen, to impart beneficial film growth and performance properties to the film.
    Type: Application
    Filed: December 12, 2013
    Publication date: April 17, 2014
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventor: Jun-Fei Zheng
  • Patent number: 8630687
    Abstract: In one aspect, a method is disclosed of making a material, the method including synthesizing a composition Sr2RuO4-ySy where y is in the range of, e.g., 0.1-1.2. In some embodiments y is in the range of 0.1-0.6. In some such embodiments, the material may exhibit a strong diamagnetic signal, e.g. of up to 5% of absolute diamagnetism (?=?¼?) or more (e.g., at temperatures ranging from 4K-300K). In some embodiments, the material may exhibit high temperature superconductivity.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: January 14, 2014
    Assignee: AVD Conduction
    Inventors: Armen Gulian, Vahan Nikoghosyan, Dennis Winegarner
  • Patent number: 8628695
    Abstract: The invention relates to a surface-modified RuO2 conductive and a lead-free powdered glass material formulated to make a paste suitable for application to the manufacture of a thick film resistor material. The resistance range that is most suitable to this invention is a resistor having 10 kilo-ohms to 10 mega-ohms per square of sheet resistance. The resulting resistors have ±100 ppm/° C. TCRs.
    Type: Grant
    Filed: April 16, 2009
    Date of Patent: January 14, 2014
    Assignee: E I du Pont de Nemours and Company
    Inventors: Kenneth Warren Hang, Marc H. Labranche, Barry Edward Taylor, Paul Douglas Vernooy
  • Patent number: 8623239
    Abstract: Disclosed is a compound characterized by comprising a linker, an oxygen-concentration-responsive phosphorophore which is linked to a first end of the linker, and a fluorophore which is lined to a second end of the linker. In the compound, it is preferred that the triplet level of the phosphorophore be lower than that of the fluorophore. The compound can be used as an oxygen-responsive luminescent probe.
    Type: Grant
    Filed: October 16, 2009
    Date of Patent: January 7, 2014
    Assignee: National University Corporation Gunma University
    Inventors: Seiji Tobita, Toshitada Yoshihara, Masahiro Hosaka, Toshiyuki Takeuchi
  • Patent number: 8617432
    Abstract: A sintered electroconductive oxide forming a thermistor element has a first crystal phase having a composition represented by RE14Al2O9 and a second crystal phase having a perovskite structure represented by (RE21-aSLa)MO3. The factor a of the second crystal phase is: 0.18<a<0.50, wherein RE1 represents at least one of Yb and Lu and at least one species selected from among group 3A elements excluding Yb, Lu, and La; RE2 represents at least one species selected from among group 3A elements excluding La and which contains at least one species selected from the group RE1; M represents Al and at least one species selected from group 4A to 7A, and 8 elements; and SL represents Sr, Ca, and Mg, with at least Sr being included at a predominant proportion by mole.
    Type: Grant
    Filed: February 18, 2010
    Date of Patent: December 31, 2013
    Assignee: NGK Spark Plug Co., Ltd.
    Inventors: Yasuyuki Okimura, Shinji Ban, Hiroshi Watanbe, Takeshi Mitsuoka
  • Patent number: 8617433
    Abstract: A conductive sintered oxide including: a first crystal phase represented by RE14Al2O9 and a second crystal phase having a perovskite structure represented by (RE21-cSLc)(AlxM1y)O3. RE1 is a first element group consisting of Yb and/or Lu and at least one element selected from Group IIIA elements excluding Yb, Lu and La. RE2 is a second element group consisting of at least one element selected from Group IIIA elements excluding La and including at least one of the elements constituting the first element group RE1. SL is an element group consisting of at least one of Sr, Ca and Mg and which includes Sr as a main element, and M1 is an element group consisting of at least one element selected from Groups IVA, VA, VIA, VIIA and VIII excluding Cr. The coefficient c is in the range of 0.18<c<0.50, and the coefficients x and y are in the range of 0.95?x+y?1.1.
    Type: Grant
    Filed: August 16, 2011
    Date of Patent: December 31, 2013
    Assignee: NGK Spark Plug Co., Ltd.
    Inventors: Hiroshi Watanabe, Yasayuki Okimura, Shinji Ban, Takeshi Mitsuoka
  • Patent number: 8608983
    Abstract: A composite anode active material including metal core particles and carbon nanotubes that are covalently bound to the metal core particles, an anode including the composite anode active material, a lithium battery employing the anode, and a method of preparing the composite anode active material.
    Type: Grant
    Filed: January 29, 2010
    Date of Patent: December 17, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-hee Lee, Jeong-na Heo, Ho-suk Kang, Sang-kook Mah, In-taek Han
  • Patent number: 8608986
    Abstract: Disclosed is a metal complex represented by the following formula (1). In the formula, M represents a metal atom; R1-R8 respectively represent a hydrogen atom, a halogen atom or a monovalent group; or alternatively R3 and R4, or R5 and R6 may combine together to form a ring.
    Type: Grant
    Filed: December 27, 2007
    Date of Patent: December 17, 2013
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Nobuhiko Akino, Rei Okamura
  • Publication number: 20130299754
    Abstract: A thermoelectric material including a compound represented by Chemical Formula 1 MxCuyBi2-x(Te1-zSez)3 ??(1) wherein in the Chemical Formula, M is at least one metal element, and x, y, and z independently satisfy the following ranges 0<x?0.1, 0<y?0.05, and 0?z?0.5.
    Type: Application
    Filed: April 18, 2013
    Publication date: November 14, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung Woo HWANG, Sang Il KIM, Byung Ki RYU, Kyung Han AHN
  • Publication number: 20130298954
    Abstract: A thermoelectric material including a composition of Formula 1: (Bi1-x-zSbxAz)u(Te1-ySey)w,??Formula 1 wherein A is a transition metal, 0?x<1, 0?y?1, 0<z?0.03, 1.8?u?2.2, and 2.8?w?3.2.
    Type: Application
    Filed: March 25, 2013
    Publication date: November 14, 2013
    Inventors: Kyung-han AHN, Sang-il KIM, Byung-ki RYU, Kyu-hyoung LEE, Sung-woo HWANG
  • Patent number: 8563172
    Abstract: An anode composition for a lithium secondary battery includes an anode active material, a binder, and a conductive material. The active material includes a plurality of anode active material particles, each of which includes a core made of metal or metalloid allowing alloying or dealloying with lithium, or a compound containing the metal or metalloid; and a shell formed at an outer portion of the core and having Ketjen black. The conductive material includes carbon nano fiber. The anode composition uses a metal-based anode active material that may controls the volume expansion, and also uses conductive material with excellent dispersion so that the life characteristic of the battery may be improved.
    Type: Grant
    Filed: October 21, 2011
    Date of Patent: October 22, 2013
    Assignee: LG Chem, Ltd.
    Inventors: Yo-Han Kwon, Byung-Hun Oh
  • Publication number: 20130270109
    Abstract: The oxides for semiconductor layers of thin-film transistors according to the present invention include: In; Zn; and at least one element (X group element) selected from the group consisting of Al, Si, Ta, Ti, La, Mg and Nb. The present invention makes it possible to provide oxides for semiconductor layers of thin-film transistors, in which connection thin-film transistors with In—Zn—O oxide semiconductors not containing Ga have favorable switching characteristics and high stress resistance, and in particular, show a small variation of the threshold voltage before and after positive bias stress tests, thereby having high stability.
    Type: Application
    Filed: December 28, 2011
    Publication date: October 17, 2013
    Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
    Inventors: Shinya Morita, Aya Miki, Satoshi Yasuno, Toshihiro Kugimiya, Tomoya Kishi
  • Publication number: 20130256608
    Abstract: The present invention provides a metal material comprising an alloy that is represented by the compositional formula Mn3-xM1xSiyAlzM2a, wherein M1 is at least one element selected from the group consisting of Ti, V, Cr, We, Co, Ni, and Cu; M2 is at least one element selected from the group consisting of B, P, Ga, Ge, Sn, and Bi, where 0?x?3.0, 3.5?y?4.5, 2.5?z?3.5, and 0?a?1, the alloy having a negative Seebeck coefficient and an electrical resistivity of 1 m?·cm or less at a temperature of 25° C. or higher. The metal material of the present invention is a novel material that has good thermoelectric conversion capability in the intermediate temperature region and excellent durability, and that is useful as an n-type thermoelectric conversion material.
    Type: Application
    Filed: December 1, 2011
    Publication date: October 3, 2013
    Applicants: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, TES NEWENERGY CO.
    Inventors: Ryoji Funahashi, Hideaki Tanaka, Tomonari Takeuchi, Tetsuo Nomura
  • Patent number: 8535574
    Abstract: This invention provides a transition metal complex of formula MXY2Z and a manufacturing method thereof, wherein M is selected from iron, ruthenium, and osmium; X represents a ligand shown in formula (II) wherein R1 and R1? are independently selected from COOH, PO3H2, PO4H2, SO3H2, SO4H2, and derivatives thereof; Y is selected from H2O, Cl, Br, CN, NCO, NCS, and NCSe; Z represents a bidentate ligand having at least two fluorinated chains. In addition, this invention also provides photovoltaic cells and a manufacturing method thereof.
    Type: Grant
    Filed: April 15, 2010
    Date of Patent: September 17, 2013
    Assignee: National Taipei University of Technology
    Inventors: Norman Lu, Jia-Sheng Shing, Wen-Han Tu
  • Publication number: 20130221283
    Abstract: Provided are a positive electrode active material for improving an output and a lithium secondary battery including the same. Particularly, graphite and conductive carbon which have shapes and sizes different from each other, may be simultaneously coated on a mixed positive electrode material of a 3-component system lithium-containing metal oxide having a layered structure and expressed as following Chemical Formula 1 and LiFePO4 having an olivine structure as an conductive material to improve high resistance occurrence and conductivity reduction phenomenon of a 3-component system lithium metal oxide due to a difference between particle sizes and surface areas of the 3-component system lithium-containing metal oxide and LiFePO4 olivine. Li1+aNixCoyMn1-x-yO2, 0?a<0.5, 0<x<1, 0<y<0.
    Type: Application
    Filed: August 3, 2012
    Publication date: August 29, 2013
    Applicant: LG CHEM. LTD.
    Inventors: Song Taek OH, Sung Kyun CHANG, Sin Young PARK, Sun Jung HWANG, Jin Hyung LIM, Geun Chang CHUNG, Sin Kyu KIM, Jung Seok CHOI, Keun Wan AN
  • Publication number: 20130140507
    Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of transition metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of transition metal oxide nanoparticles.
    Type: Application
    Filed: December 1, 2011
    Publication date: June 6, 2013
    Applicant: Toyota Motor Engin. & Manufact. N.A. (TEMA)
    Inventor: Michael P. Rowe
  • Publication number: 20130085070
    Abstract: In one aspect, a method is disclosed of making a material, the method including synthesizing a composition Sr2RuO4-ySy where y is in the range of, e.g., 0.1-1.2. In some embodiments y is in the range of 0.1-0.6. In some such embodiments, the material may exhibit a strong diamagnetic signal, e.g. of up to 5% of absolute diamagnetism (?=?¼?) or more (e.g., at temperatures ranging from 4K-300K). In some embodiments, the material may exhibit high temperature superconductivity.
    Type: Application
    Filed: September 28, 2012
    Publication date: April 4, 2013
    Applicant: ADV CONDUCTION
    Inventor: ADV Conduction
  • Patent number: 8383014
    Abstract: A metal nanoparticle composition for the fabrication of conductive features. The metal nanoparticle composition advantageously has a low viscosity permitting deposition of the composition by direct-write tools. The metal nanoparticle composition advantageously also has a low conversion temperature, permitting its deposition and conversion to an electrical feature on polymeric substrates.
    Type: Grant
    Filed: June 15, 2010
    Date of Patent: February 26, 2013
    Assignee: Cabot Corporation
    Inventors: Karel Vanheusden, Klaus Kunze, Hyungrak Kim, Aaron D. Stump, Allen B. Schult, Mark J. Hampden-Smith, Chuck Edwards, Anthony R. James, James Caruso, Toivo T. Kodas, Scott Thomas Haubrich, Mark H. Kowalski
  • Publication number: 20130015413
    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-zXnQ?z, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q? is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2 and 0<a?1.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 17, 2013
    Applicant: LG CHEM, LTD.
    Inventors: Cheol-Hee PARK, Tae-Hoon KIM
  • Publication number: 20130015412
    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-mAmSb12-n-zXnTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Pd, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt, X is at least one selected from the group consisting of Si, Ga, Ge and Sn, 0<x<1, 0<y<1, 0?m?1, 0?n<9 and 0<z?2.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 17, 2013
    Applicant: LG CHEM, LTD.
    Inventors: Cheol-Hee PARK, Tae-Hoon KIM
  • Publication number: 20130009113
    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnQz, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt, X is at least one selected from the group consisting of Si, Ga, Ge and Sn, Q is at least one selected from the group consisting of O, S, Se and Te, 0<x<1, 0?y<1, 0?m?1, 0?a?1, 0?n<9, 0?z?4, 0?b?3 and 0<n+z+b.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 10, 2013
    Applicant: LG CHEM, LTD.
    Inventors: Cheol-Hee PARK, Tae-Hoon KIM, Deok-Hie PARK, Kyung-Moon KO
  • Publication number: 20130009114
    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-zXnTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; 0<x<1; 0<y<1; O?m?1; 0?n<9; 0<z?2 and 0<a?1.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 10, 2013
    Applicant: LG CHEM, LTD.
    Inventors: Cheol-Hee PARK, Tae-Hoon KIM
  • Publication number: 20130009115
    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnQ?z, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q? is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2; 0?a?1, 0<b?3 and 0<n+z+b<12.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 10, 2013
    Applicant: LG CHEM, LTD.
    Inventors: Cheol-Hee PARK, Tae-Hoon KIM
  • Publication number: 20130009108
    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2; 0?a?1; 0<b?3; and 0<n+z+b<12.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 10, 2013
    Applicant: LG CHEM, LTD.
    Inventors: Cheol-Hee PARK, Tae-Hoon KIM
  • Publication number: 20130009112
    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-mAmSb12-n-z-pXnQ?pTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q? is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0?m?1; 0?n?7; 0<z?2 and 0<p?2.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 10, 2013
    Applicant: LG CHEM, LTD.
    Inventors: Cheol-Hee PARK, Tae-Hoon KIM
  • Publication number: 20120329686
    Abstract: A lubricating and shock absorbing materials are described, which are based on nanoparticles having the formula A1-x-Bx-chalcogenide. Processes for their manufacture are also described.
    Type: Application
    Filed: March 10, 2011
    Publication date: December 27, 2012
    Inventors: Reshef Tenne, Francis Leonard Deepak, Hagai Cohen, Sidney R. Cohen, Rita Rosentsveig, Lena Yadgarov
  • Patent number: 8337723
    Abstract: Disclosed is an electroconductive material which contains at least a vanadium oxide and a phosphorus oxide, and has a crystalline structure composed of a crystalline phase and an amorphous phase, in which the crystalline phase contains a monoclinic vanadium-containing oxide, and a volume of the crystalline phase is larger than that of the amorphous phase. The electroconductive material has a reduced specific resistance and has improved functions as an electrode material, a solid-state electrolyte, or a sensor such as a thermistor.
    Type: Grant
    Filed: July 1, 2010
    Date of Patent: December 25, 2012
    Assignees: Hitachi Powdered Metals Co., Ltd., Hitachi, Ltd.
    Inventors: Yuji Hashiba, Shinichi Tachizono, Kei Yoshimura, Takashi Naito, Takuya Aoyagi
  • Publication number: 20120248386
    Abstract: A thermoelectric material and a method of making a thermoelectric material are provided. In certain embodiments, the thermoelectric material comprises at least 10 volume percent porosity. In some embodiments, the thermoelectric material has a zT greater than about 1.2 at a temperature of about 375 K. In some embodiments, the thermoelectric material comprises a topological thermoelectric material. In some embodiments, the thermoelectric material comprises a general composition of (Bi1-xSbx)u(Te1-ySey)w, wherein 0?x?1, 0?y?1, 1.8?u?2.2, 2.8?w?3.2. In further embodiments, the thermoelectric material includes a compound having at least one group IV element and at least one group VI element. In certain embodiments, the method includes providing a powder comprising a thermoelectric composition, pressing the powder, and sintering the powder to form the thermoelectric material.
    Type: Application
    Filed: March 30, 2012
    Publication date: October 4, 2012
    Applicants: THE OHIO STATE UNIVERSITY, ZT PLUS
    Inventors: Joseph P. Heremans, Christopher M. Jaworski, Vladimir Jovovic, Fred Harris
  • Publication number: 20120186621
    Abstract: A thermoelectric material including a thermoelectric matrix; and nano-inclusions in the thermoelectric matrix, the nano-inclusions having an average particle diameter of about 10 nanometers to about 30 nanometers.
    Type: Application
    Filed: January 23, 2012
    Publication date: July 26, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-il KIM, Kyu-hyoung LEE
  • Publication number: 20120178016
    Abstract: A cathode material for a fuel cell, the cathode material for a fuel cell including a lanthanide metal oxide having a perovskite crystal structure; and a bismuth metal oxide represented by Chemical Formula 1 below, Bi2-x-yAxByO3,??Chemical Formula 1 wherein A and B are each a metal with a valence of 3, A and B are each independently at least one element selected from a rare earth element and a transition metal element, A and B are different from each other, and 0<x?0.3 and 0<y?0.3.
    Type: Application
    Filed: January 6, 2012
    Publication date: July 12, 2012
    Applicants: SAMSUNG ELECTRO-MECHANICS CO.., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hee-jung PARK, Doh-won JUNG
  • Publication number: 20120172230
    Abstract: The present invention provides a Bi2223 oxide superconductor composed of Bi, Pb, Sr, Ln, Ca, Cu, and O, wherein the Ln is at least one selected from La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and the composition ratio of Sr to Ln is a composition ratio described below. The Bi2223 oxide conductor has a high critical current density in a magnetic field at low temperature and is capable of maintaining a high critical current density in a self magnetic field even at 77 K. Sr:Ln=(1?x):x (wherein 0.002?x?0.015) Also, the present invention provides a method for producing the Bi2223 oxide superconductor, the method including a step of ionizing a material containing elements, which constitute the Bi2223 oxide superconductor, in a solution; and a step of removing a solvent and causing a thermal decomposition reaction by spraying the solution into a high-temperature atmosphere to produce a powder containing atoms constituting the oxide superconductor.
    Type: Application
    Filed: August 5, 2010
    Publication date: July 5, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Kazuaki Tatamidani, Naoki Ayai, Jun-ichi Shimoyama
  • Patent number: 8183174
    Abstract: A method for preparing a metal-doped ruthenium oxide material by heating a mixture of a doping metal and a source of ruthenium under an inert atmosphere. In some embodiments, the doping metal is in the form of iridium black or lead powder, and the source of ruthenium is a powdered ruthenium oxide. An iridium-doped or lead-doped ruthenium oxide material can perform as an oxygen evolution catalyst and can be fabricated into electrodes for electrolysis cells.
    Type: Grant
    Filed: October 15, 2009
    Date of Patent: May 22, 2012
    Assignee: California Institute of Technology
    Inventors: Thomas I. Valdez, Sekharipuram R. Narayanan
  • Publication number: 20120063058
    Abstract: Disclosed are a composite electrode active material and a supercapacitor using the same, and more particularly, an electrode active material having M1-xRuxO3 (M=Sr, Ba, Mg) and a supercapacitor using the same, wherein the electrode active material is characterized by comprising M1-xRuxO3, where M is at least one selected from a group consisting of strontium, barium and magnesium, and a method for fabricating a composite electrode active material comprises (a) preparing a spinning solution containing a precursor of M oxide, a precursor of Ru oxide, a polymer and a solvent, (b) spinning the spinning solution on a collector to fabricate a nanofiber web having M1-xRuxO3 precursor, and (c) performing heat treatment for the nanofiber web to remove the polymer so as to make an electrode active material in the structure of porous nanofiber web having M1-xRuxO3, wherein the M comprises at least one selected from a group consisting of strontium, barium and magnesium.
    Type: Application
    Filed: September 13, 2010
    Publication date: March 15, 2012
    Inventors: Il Doo KIM, Yong-Won SONG, Tae Seon HYUN
  • Patent number: 8133413
    Abstract: This invention relates to a composition using a ruthenium oxide and/or a polynary ruthenium oxide as conducting components and using a Cu containing glass frit.
    Type: Grant
    Filed: April 17, 2009
    Date of Patent: March 13, 2012
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Keiichiro Hayakawa, Jerome David Smith, Yuko Ogata, Marc H. Labranche, Kenneth Warren Hang
  • Patent number: 8128904
    Abstract: A process for preparing a multielement oxide composition comprising the element iron in oxidic form, in which the source of the elemental constituent of iron used is an aqueous iron nitrate solution whose preparation comprises the melting of a solid hydrate of iron nitrate.
    Type: Grant
    Filed: January 14, 2008
    Date of Patent: March 6, 2012
    Assignee: BASF Aktiengesellschaft
    Inventors: Andreas Raichle, Holger Borchert, Klaus Joachim Müller-Engel, Ulrich Cremer
  • Publication number: 20120043511
    Abstract: A conductive sintered oxide which includes: a conductive crystal phase having a perovskite structure represented by (RE1-cSrc)MdO3, in which RE is a group of elements consisting of Yb and/or Lu and at least one element selected from Group IIIA elements excluding Yb, Lu and La, and M is a group of elements consisting of Al and at least one element selected from Groups IVA, VA, VIA, VIIA and VIII, a first insulating crystal phase represented by RE2O3, and a second insulating crystal phase represented by SrAl2O4. The conductive crystal phase has a coefficient c satisfying 0.18<c<0.50 and has a coefficient d satisfying 0.67?d?0.93. A content of a third insulating crystal phase represented by RE4Al2O9, the content of which may be zero, is smaller than the content of each of the first and second insulating crystal phases.
    Type: Application
    Filed: August 16, 2011
    Publication date: February 23, 2012
    Applicant: NGK SPARK PLUG CO., LTD.
    Inventors: Hiroshi WATANABE, Yasuyuki OKIMURA, Shinji BAN, Takeshi MITSUOKA
  • Publication number: 20120024333
    Abstract: A thermoelectric material has a microstructure deformed by cryogenic impact. When the cryogenic impact is applied to the thermoelectric material, defects are induced in the thermoelectric material, and such defects increase phonon scattering, which results in enhanced figure of merit.
    Type: Application
    Filed: July 29, 2011
    Publication date: February 2, 2012
    Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-mock LEE, Kyu-hyoung LEE, Sung-ho JIN
  • Patent number: 8093170
    Abstract: A semiconductor ceramic material which contains no Pb and has a high Curie point, low resistivity, and PTC characteristics is represented by the formula ABO3 wherein A includes Ba, Ca, an alkali metal element, Bi, and a rare-earth element, and B includes Ti. The semiconductor ceramic material contains 5 to 20 molar parts and preferably 12.5 to 17.5 molar parts of Ca per 100 molar parts of Ti. The ratio of the content of the alkali metal element to the sum of the content of the bismuth plus the content of the rare earth element, is preferably from 1.00 to 1.06. The semiconductor ceramic material preferably further contains 0.01 to 0.2 molar parts of Mn per 100 molar parts of Ti.
    Type: Grant
    Filed: December 11, 2009
    Date of Patent: January 10, 2012
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Hayato Katsu
  • Publication number: 20110248210
    Abstract: The invention is a bulk-processed thermoelectric material and a method for fabrication. The material measures at least 30 microns in each dimension and has a figure of merit (ZT) greater than 1.0 at any temperature less than 200° C. The material comprises at least two constituents; a host phase and a dispersed second phase. The host phase is a semiconductor or semimetal and the dispersed phase of the bulk-processed material is comprised of a plurality of inclusions. The material has a substantially coherent interface between the host phase and the dispersed phase in at least one crystallographic direction.
    Type: Application
    Filed: December 7, 2009
    Publication date: October 13, 2011
    Applicant: Carrier Corporation
    Inventors: Rhonda R. Willigan, Susanne M. Opalka, Joseph V. Mantese, Slade R. Culp, Jefferi J. Covington