Sulfur, Selenium, Or Tellurium Containing Patents (Class 252/519.4)
  • Patent number: 10818852
    Abstract: Provided are: a light-emitting layer for a perovskite light-emitting device; a method for manufacturing the same; and a perovskite light-emitting device using the same. The method of the present invention for manufacturing a light-emitting layer for a halide perovskite light-emitting device comprises a step of forming a first nanoparticle thin film by coating, on a member for coating a light-emitting layer, a solution comprising halide perovskite nanoparticles including a perovskite nanocrystal structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: October 27, 2020
    Inventors: Tae-Woo Lee, Sanghyuk Im, Himchan Cho, Young-Hoon Kim
  • Patent number: 10109760
    Abstract: The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.
    Type: Grant
    Filed: April 8, 2016
    Date of Patent: October 23, 2018
    Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Gyuweon Hwang, Donghun Kim, Jose M. Cordero, Mark W. B. Wilson, Chia-Hao M. Chuang, Jeffrey C. Grossman, Moungi G. Bawendi
  • Patent number: 10079144
    Abstract: Provided are a composition for forming a layered transition metal chalcogenide compound layer and a method of forming a layered transition metal chalcogenide compound layer by using the composition. The composition includes at least one of a transition metal precursor represented by Formula 1 and a chalcogenide precursor represented by Formula 2. Ma(R1)6-b-c(H)b(R2)c??[Formula 1] wherein, in Formula 1, M, R1, R2, a, b, and c are the same as defined in the detailed description, and M?kX2??[Formula 2] wherein, in Formula 2, M? and X are the same as defined in the detailed description.
    Type: Grant
    Filed: April 21, 2016
    Date of Patent: September 18, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Haeryong Kim, Hyeonjin Shin, Seongjun Park
  • Patent number: 9963633
    Abstract: A colloidal material including semiconductor nanocrystals of formula AnXm, wherein A is selected from group Ib, IIa, IIb, IIIa, IIIb, IVa, IVb, Va, Vb, VIb, VIIb, VIII, IIb, III, IV or mixtures thereof, X is selected from group Va, VIa, VIIa or mixtures thereof, and n and m are independently a decimal number from 0 to 5. The semiconductor nanocrystals have a quasi 2D structure, wherein the smallest dimension is smaller than the other two dimensions by a factor of at least 1.5 and the faces substantially normal to the smallest dimension consist either of A or X. Also, a semiconducting thin film, an optoelectronic device, a laser, a photovoltaic cell, a diode, a light emitting diode or a display including the colloidal material.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: May 8, 2018
    Assignee: NEXDOT
    Inventors: Benoit Dubertret, Sandrine Ithurria
  • Patent number: 9634220
    Abstract: The present invention provides a method for synthesizing a BixSb2-xTe3 thermoelectric nanocompound (0<x<2), comprising the following steps: preparing a Bi—Sb—Te solution by adding Bi, Sb, and Te precursors to a solvent (step 1); preparing a Bi—Sb—Te hydrate by mixing the Bi—Sb—Te solution prepared in step 1) with a base aqueous solution (step 2); preparing a BixSb2-xTe3 reactant by liquid phase reduction at room temperature after adding a reducing agent to the Bi—Sb—Te hydrate prepared in step 2) (step 3); aging the BixSb2-xTe3 reactant prepared in step 3) (step 4); and preparing BixSb2-xTe3 nanoparticles by filtering and drying the BixSb2-xTe3 reactant aged in step 4) (step 5). The BixSb2-xTe3 thermoelectric nanocompound synthesized by the method of the present invention via liquid phase reduction is composed of regular nanoparticles since the method does not need any additional heat-treatment to eliminate chemical additives and prevents particles from being over-grown.
    Type: Grant
    Filed: April 25, 2014
    Date of Patent: April 25, 2017
    Assignee: DAEGU GYEONGBUK INSTITUTE OF SCIENCE & TECHNOLOGY
    Inventors: Cham Kim, Dong Hwan Kim, Jong Tae Kim, Ji Hyeon Ahn, Ho Young Kim
  • Patent number: 9480412
    Abstract: An electrode assembly includes a handle, holder, and electrode with an electrical conductor. The electrode is loaded into the holder with its attached conductor. The holder includes a protective cap, a resilient button with a flange, an alignment ring, two plungers each with a spring, and a retention ring. The flange and retention ring both have plural holes in registration and with posts depending from the alignment ring in order to hold the retention ring in place. Inside the button are two plungers, one on top of the other, and each with its own spring resisting downward pressure. Once the cap is removed from the button, the holder is placed against the skin of a patient, and the button is pressed, the top plunger pushes the bottom plunger against the skin of the patient and then the electrode from the protection ring, thereby ejecting the electrode.
    Type: Grant
    Filed: August 21, 2014
    Date of Patent: November 1, 2016
    Assignee: Rhythmlink International LLC
    Inventors: Daniel E. McCoy, Shawn V. Regan, William Webb
  • Patent number: 9475725
    Abstract: Selenogermanate, selenogallo- or selenoindo-germanate glasses that are modified by alkali metals, for example, Na or Li and, as such, are characterized by high alkali ion mobility or conductivity. Ionic conducting chalcogenide glasses have potential application as an electrolyte medium for solid state batteries.
    Type: Grant
    Filed: November 22, 2013
    Date of Patent: October 25, 2016
    Assignee: Corning Incorporated
    Inventors: Bruce Gardiner Aitken, Stephen Charles Currie
  • Patent number: 9067787
    Abstract: This disclosure concerns a method of making nanowires in a single flask and in non-coordinating solvent involving the reaction of PbO with oleic acid to produce Pb oleate, heating the Pb oleate to a preferred temperature with additional coordinating ligands, injecting a solution of Se to produce a second solution, heating the second solution, and maintaining the temperature, resulting in nucleation and growth of PbSe nanowires.
    Type: Grant
    Filed: April 15, 2011
    Date of Patent: June 30, 2015
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventor: Edward E Foos
  • Publication number: 20150114456
    Abstract: The present invention provides a method for the preparation of low-dimensional materials, comprising mixing a pristine material to be abraded with an organic solvent to form a mixture, abrading the material to be abraded by bead-milling, obtaining a suspension comprising the material of low dimension and the organic solvent, and removing the organic solvent from the suspension to obtain the low-dimensional material.
    Type: Application
    Filed: May 5, 2014
    Publication date: April 30, 2015
    Applicant: Academia Sinica
    Inventors: Chih Wei CHU, Mohammed Aziz IBRAHEM
  • Publication number: 20150118144
    Abstract: The present invention relates to dispersible binary and ternary metal chalcogenide nanoparticle compositions that are substantially free of organic stabilizing agents. These nanoparticle compositions can be used as precursor inks for the preparation of copper zinc tin chalcogenides and copper indium gallium chalcogenides. In addition, this invention provides processes for manufacturing coated substrates and thin films of copper zinc tin chalcogenide and copper indium gallium chalcogenide. This invention also provides process for manufacturing photovoltaic cells incorporating such thin films.
    Type: Application
    Filed: March 14, 2013
    Publication date: April 30, 2015
    Applicant: E I Du Pont Nemours and Company
    Inventors: Yanyan Cao, Jonathan V. Caspar
  • Publication number: 20150118487
    Abstract: The invention describes two methods for manufacturing metal dichalcogenide materials. The invention also includes a coated dichalcogenide substrate.
    Type: Application
    Filed: October 27, 2014
    Publication date: April 30, 2015
    Inventors: Colin A. Wolden, Rachel M. Morrish
  • Patent number: 9017581
    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-zSez, where 0<x?0.25 and 0.4<z?2.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: April 28, 2015
    Assignee: LG Chem, Ltd.
    Inventors: Cheol-Hee Park, Tae-Hoon Kim, Deok-Hie Park, Kyung-Moon Ko
  • Patent number: 9017582
    Abstract: The invention relates to a novel process for preparing lithium sulfide and to the use thereof, wherein a reaction of lithium-containing strong bases with hydrogen sulfide is undertaken in an aprotic organic solvent within the temperature range from ?20 to 120° C. under inert conditions. The lithium sulfide obtained by the process is used as a positive material in a galvanic element or for the synthesis of Li ion-conductive solids, especially for the synthesis of glasses, glass ceramics or crystalline products.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: April 28, 2015
    Assignee: Chemetall GmbH
    Inventors: Peter Rittmeyer, Ulrich Wietelmann, Uwe Lischka, Dieter Hauk, Bernhard Füger, Armin Stoll, Dirk Dawidowski
  • Publication number: 20150034884
    Abstract: It is an object to provide a method for producing compound semiconductor particles in which monodisperse compound semiconductor particles can be prepared according to the intended object, clogging with products does not occur due to self-dischargeability, a large pressure is not necessary, and productivity is high. In producing compound semiconductor particles by separating and precipitating, in a fluid, semiconductor raw materials, the fluid is formed into a thin film fluid between two processing surfaces arranged so as to be able to approach to and separate from each other, at least one of which rotates relative to the other, and the semiconductor raw materials are separated and precipitated in the thin film fluid.
    Type: Application
    Filed: August 22, 2014
    Publication date: February 5, 2015
    Inventor: Masakazu ENOMURA
  • Publication number: 20150021551
    Abstract: A coated quantum dot and methods of making coated quantum dots are provided. Products including quantum dots described herein are also disclosed.
    Type: Application
    Filed: May 21, 2014
    Publication date: January 22, 2015
    Applicant: QD VISION, INC.
    Inventors: CRAIG BREEN, WENHAO LIU
  • Publication number: 20150024543
    Abstract: A process for producing copper selenide nanoparticles by effecting conversion of a nanoparticle precursor composition comprising copper and selenide ions to the material of the copper selenide nanoparticles in the presence of a selenol compound. Copper selenide-containing films and CIGS semiconductor films produced using copper selenide as a fluxing agent are also disclosed.
    Type: Application
    Filed: July 16, 2014
    Publication date: January 22, 2015
    Inventors: James Harris, Nathalie Gresty, Ombretta Masala, Nigel Pickett
  • Patent number: 8936674
    Abstract: The present invention provides a conductive silica sol composition containing at least a silica sol composition, and at least one selected from perfluoroalkyl sulfonates perfluoroalkyl sulfone imide salts, and bis(fluorosulfonyl) imide salts.
    Type: Grant
    Filed: November 13, 2009
    Date of Patent: January 20, 2015
    Assignees: Mitsubishi Materials Corporation, Mitsubishi Materials Electronic Chemicals Co., Ltd.
    Inventors: Tsunetoshi Honda, Tsutomu Atsuki, Natsumi Sakuraba
  • Patent number: 8920686
    Abstract: A radiation converter material includes a semiconductor material used for directly converting radiation quanta into electrical charge carriers. In at least one embodiment, the semiconductor material includes a dopant in a dopant concentration and defect sites produced in a process-dictated manner in such a way that the semiconductor material includes an ohmic resistivity in a range of between 5·107 ?·cm and 2·109 ?·cm. Such a radiation converter material is particularly well matched to the requirements in particular in human-medical applications with regard to the high flux rate present and the spectral distribution of the radiation quanta. In at least one embodiment, the invention additionally relates to a radiation converter and a radiation detector, and a use of and a method for producing such a radiation converter material.
    Type: Grant
    Filed: January 28, 2011
    Date of Patent: December 30, 2014
    Assignee: Siemens Aktiengesellschaft
    Inventors: Peter Hackenschmied, Christian Schröter, Matthias Strassburg
  • Patent number: 8920684
    Abstract: The present invention discloses an Al—Sb—Te phase change material used for PCM and fabrication method thereof. Said phase change material, which can be prepared by PVD, CVD, ALD, PLD, EBE, and ED, is a mixture of three elements aluminum (Al), antimony (Sb) and tellurium (Te) with a general formula of Alx(SbyTe1)1-x, where 0<x?0.85, 0.67?y?7. Said material is electrically driven from outside. By adjusting the content of three elements in the mixture, storage materials with different crystallization temperatures, melting temperatures and activation energies of crystallization can be achieved. Any two elements of aluminum, antimony and tellurium can be bonded to each other, so the adjustability is very high, maintaining the phase change properties in a wide range.
    Type: Grant
    Filed: June 24, 2011
    Date of Patent: December 30, 2014
    Assignee: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
    Inventors: Cheng Peng, Liangcai Wu, Feng Rao, Zhitang Song, Bo Liu, Xilin Zhou, Min Zhu
  • Publication number: 20140361228
    Abstract: A process of synthesizing nanocrystals, the process including: obtaining a metal precursor, a non-metal precursor, a ligand compound, and an ionic liquid; and contacting the metal precursor, the non-metal precursor, the ligand compound, and the ionic liquid to form a mixture and synthesize a first semiconductor nanocrystal.
    Type: Application
    Filed: June 5, 2014
    Publication date: December 11, 2014
    Inventors: Hyo Sook JANG, Eun Joo JANG, Shin Ae JUN
  • Publication number: 20140346442
    Abstract: Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method for making the same in a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, phase change layers, and sensor devices.
    Type: Application
    Filed: May 16, 2012
    Publication date: November 27, 2014
    Applicant: THE UNIVERSITY OF CHICAGO
    Inventors: Angshuman Nag, Dmitri V. Talapin
  • Patent number: 8894889
    Abstract: A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film.
    Type: Grant
    Filed: May 9, 2013
    Date of Patent: November 25, 2014
    Assignee: Neo Solar Power Corp.
    Inventors: Feng-Yu Yang, Ching Ting, Yueh-Chun Liao
  • Publication number: 20140335649
    Abstract: A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film.
    Type: Application
    Filed: May 9, 2013
    Publication date: November 13, 2014
    Inventors: Feng-Yu Yang, Ching Ting, Yueh-Chun Liao
  • Publication number: 20140326316
    Abstract: Thin films comprising crystalline Fe2XY4, wherein X is Si or Ge and Y is S or Se, are obtained by coating an ink comprised of nanoparticle precursors of Fe2XY4 and/or a non-particulate amorphous substance comprised of Fe, X and Y on a substrate surface and annealing the coating. The coated substrate thereby obtained has utility as a solar absorber material in thin film photovoltaic devices.
    Type: Application
    Filed: May 1, 2014
    Publication date: November 6, 2014
    Applicant: Delaware State University
    Inventors: Daniela Rodica Radu, Cheng-Yu Lai
  • Publication number: 20140312286
    Abstract: A method for preparing semiconductor nanocrystals includes reacting one or more semiconductor nanocrystal precursors in a liquid medium in the presence of a boronic compound at a reaction temperature resulting in semiconductor nanocrystals. Semiconductor nanocrystals are also disclosed.
    Type: Application
    Filed: February 17, 2014
    Publication date: October 23, 2014
    Applicant: QD VISION, INC.
    Inventor: JUSTIN W. KAMPLAIN
  • Publication number: 20140284528
    Abstract: Semiconductor nanoparticles of the present invention are particles each having a core-shell structure that includes a core and a shell surrounding the core. The core includes (AgIn)xZn2(1?x)S2 (0.4?x?0.95 holds). The shell includes ZnS or ZnO, and the semiconductor nanoparticles each have at least one hydrophilic functional group on a surface of the shell. As the hydrophilic functional group, for example, a carboxyl group or a sulfo group may be mentioned. Since having a low toxicity and a high emission quantum yield, the semiconductor nanoparticles as described above may be used for a fluorescent probe for biological labeling.
    Type: Application
    Filed: October 17, 2013
    Publication date: September 25, 2014
    Inventors: Hiroshi YUKAWA, Hiroyasu NISHI, Tsukasa TORIMOTO, Yoshinobu BABA
  • Publication number: 20140287237
    Abstract: A process of growth in the thickness of at least one facet of a colloidal inorganic sheet. By sheet is meant a structure having at least one dimension, the thickness, of nanometric size and lateral dimensions great compared to the thickness, typically more than 5 times the thickness. By homostructured is meant a material of homogeneous composition in the thickness and by heterostructured is meant a material of heterogeneous composition in the thickness. The process allows the deposition of at least one monolayer of atoms on at least one inorganic colloidal sheet, this monolayer being constituted of atoms of the type of those contained or not in the sheet. Homostructured and heterostructured materials resulting from such process as well as the applications of the materials are also described.
    Type: Application
    Filed: October 19, 2012
    Publication date: September 25, 2014
    Applicant: NEXDOT
    Inventor: Benoit Mahler
  • Publication number: 20140264259
    Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, Kishori Deshpande, Jake Joo
  • Publication number: 20140264186
    Abstract: The present invention provides for a natural, non-toxic, environmentally friendly, “green” mineral based composition that produces ions and emits far infrared heat and the composition comprises tourmaline microcrystals and at least one activating element.
    Type: Application
    Filed: March 14, 2014
    Publication date: September 18, 2014
    Inventors: Douglas Spatz, Dan DeLaRosa
  • Publication number: 20140264190
    Abstract: A composition for forming an electrode. The composition includes a metal fluoride compound doped with a dopant. The addition of the dopant: (i) improves the bulk conductivity of the composition as compared to the undoped metal fluoride compound; (ii) changes the bandgap of the composition as compared to the undoped metal fluoride compound; or (iii) induces the formation of a conductive metallic network. A method of making the composition is included.
    Type: Application
    Filed: March 19, 2014
    Publication date: September 18, 2014
    Applicant: Wildcat Discovery Technologies, Inc.
    Inventors: Wei Tong, Steven Kaye, David Keogh, Cory O'Neill
  • Publication number: 20140252304
    Abstract: A phase-change memory and a semiconductor recording/reproducing device capable of reducing consumed power are provided. A SnxTe100-x/Sb2Te3 SL film obtained by depositing a SnxTe100-x film and a Sb2Te3 film layer by layer contains a SnTe/Sb2Te3 superlattice phase formed of SnTe and Sb2Te3, a SnSbTe alloy phase, and a Te phase. The SnTe/Sb2Te3 superlattice phase is diluted by the SnSbTe alloy phase and the Te phase. Here, X of the SnxTe100-x film is represented by 4 at. %?X?55 at. %.
    Type: Application
    Filed: October 10, 2013
    Publication date: September 11, 2014
    Applicant: National Institute of Advanced Industrial Science and Technology
    Inventors: Susumu Soeya, Takahiro Odaka, Toshimichi Shintani, Junji Tominaga
  • Publication number: 20140252529
    Abstract: The disclosure describes methods for preparing lead salt materials which are sensitive to the mid-infrared spectrum which can be used to manufacture high-uniformity, high-detectivity, polycrystalline lead salt photoconductive and photovoltaic photodetectors.
    Type: Application
    Filed: February 28, 2014
    Publication date: September 11, 2014
    Inventors: Zhisheng Shi, Jijun Qiu, Binbin Weng, Zijian Yuan
  • Patent number: 8828279
    Abstract: The invention comprises the method of growing lead chalcogenide nanocrystals from the surface of titanium dioxide in organic solvents, lead chalcogenide/TiO2 nanocomposites colloids produced by the claimed method, and the application of lead chalcogenide/TiO2 nanostructures as an active absorbing element in nanocrystal-sensitized solar cells.
    Type: Grant
    Filed: April 8, 2011
    Date of Patent: September 9, 2014
    Assignee: Bowling Green State University
    Inventors: Mikhail Zamkov, Krishna P. Acharya
  • Patent number: 8828278
    Abstract: The invention relates to electroplating additives for the deposition of a group IB metal/binary or ternary group IB-group IIIA/ternary, quaternary or pentanary group IB-group IIIA-group VIA alloy on substrates useful for thin film solar cells. The additives are thiourea compounds or derivatives which have the general formula (A): wherein X1 and X2 may be the same or different and are selected from the group consisting of arylene and heteroarylene; FG1 and FG2 may be the same or different or are selected from the group consisting of —S(O)2OH, —S(O)OH, —COOH, —P(O)2OH and primary, secondary and tertiary amino groups and salts and esters thereof; R is selected from the group consisting of alkylene, arylene or heteroarylene and n and m are integers from 1 to 5.
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: September 9, 2014
    Assignee: Atotech Deutschland GmbH
    Inventors: Torsten Voss, Jöerg Schulze, Andreas Kirbs, Aylin Machmor, Heiko Brunner, Bernd Fröese, Ulrike Engelhardt
  • Patent number: 8801972
    Abstract: A process of preparing a zinc chalcogenide includes providing a solution of 8-hydroxyquinoline; a zinc precursor; and a reaction solvent; isolating a precipitate from the solution; and calcining the precipitate to form the zinc chalcogenide. Additionally, a polymer composite may include a polymer, bis(8-hydroxyquinolinato)zinc, and elemental sulfur or bis(8-hydroxyquinolinato)zM, wherein M is a metal ion and the value of z is equivalent to the oxidation state of the metal ion.
    Type: Grant
    Filed: February 10, 2012
    Date of Patent: August 12, 2014
    Assignee: Indian Institute of Technology Kanpur
    Inventor: S. Sundar Manoharan
  • Patent number: 8796068
    Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
    Type: Grant
    Filed: June 6, 2013
    Date of Patent: August 5, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Matthias Stender, Chongying Xu, Tianniu Chen, William Hunks, Philip S. H. Chen, Jeffrey F. Roeder, Thomas H. Baum
  • Publication number: 20140212664
    Abstract: Provided in one embodiment is a method of forming an inorganic nanowire, comprising: providing an elongated organic scaffold; providing a plurality of inorganic nanoparticles attached to the organic scaffold along a length of the organic scaffold; and fusing the nanoparticles attached to the organic scaffold to form an inorganic nanowire.
    Type: Application
    Filed: August 27, 2013
    Publication date: July 31, 2014
    Applicants: Massachusetts Institute of Technology, Board of Regents, The University of Texas System
    Inventors: Angela M. BELCHER, Chuanbin MAO, Daniel J. SOLIS
  • Patent number: 8784701
    Abstract: A process for producing nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table, and materials produced by the process. In an embodiment, the process includes effecting conversion of a nanoparticle precursor composition comprising group 13, 16, and 11 or 12 ions to the material of the nanoparticles in the presence of a selenol compound. Other embodiments include a process for fabricating a thin film including nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table as well as a process for producing a printable ink formulation including the nanoparticles.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: July 22, 2014
    Assignee: Nanoco Technologies Ltd.
    Inventors: Nigel Pickett, James Harris
  • Patent number: 8784703
    Abstract: A method of making a colloidal solution of high confinement semiconductor nanocrystals includes: forming a first solution by combining a solvent, growth ligands, and at most one semiconductor precursor; heating the first solution to the nucleation temperature; and adding to the first solution, a second solution having a solvent, growth ligands, and at least one additional and different precursor than that in the first solution to form a crude solution of nanocrystals having a compact homogenous semiconductor region. The method further includes: waiting 0.5 to 20 seconds and adding to the crude solution a third solution having a solvent, growth ligands, and at least one additional and different precursor than those in the first and second solutions; and lowering the growth temperature to enable the formation of a gradient alloy region around the compact homogenous semiconductor region, resulting in the formation of a colloidal solution of high confinement semiconductor nanocrystals.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: July 22, 2014
    Assignee: Eastman Kodak Company
    Inventors: Keith Brian Kahen, Matthew Holland, Sudeep Pallikkara Kuttiatoor
  • Patent number: 8771555
    Abstract: An ink composition for forming a chalcogenide semiconductor film and a method for forming the same are disclosed. The ink composition includes a solvent, a plurality of metal chalcogenide nanoparticles and at least one selected from the group consisted of metal ions and metal complex ions. The metal ions and/or complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.
    Type: Grant
    Filed: September 16, 2011
    Date of Patent: July 8, 2014
    Assignee: Neo Solar Power Corp.
    Inventors: Yueh-Chun Liao, Feng-Yu Yang, Ching Ting
  • Patent number: 8759053
    Abstract: The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component containing at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals.
    Type: Grant
    Filed: February 3, 2009
    Date of Patent: June 24, 2014
    Assignees: UT-Battelle, LLC, University of Tennessee Research Foundation
    Inventors: Tommy J. Phelps, Robert J. Lauf, Ji Won Moon, Adam J. Rondinone, Lonnie J. Love, Chad Edward Duty, Andrew Stephen Madden, Yiliang Li, Ilia N. Ivanov, Claudia Jeanette Rawn
  • Patent number: 8758653
    Abstract: A material and method for producing mesostructured materials with multiple functionalities that are independently adjustable and collectively optimizable is provided. The method uses a series of discrete synthesis steps under otherwise mutually incompatible conditions, e.g., from acidic, alkaline, and/or non-aqueous solutions, allows different functionalities to be introduced to the materials and optimized. To illustrate the method, cubic mesoporous silica films were prepared from strongly acidic solutions that were separately functionalized under highly alkaline conditions to incorporate hydrophilic aluminosilica moieties and under non-aqueous conditions to introduce perfluorosulfonic-acid surface groups.
    Type: Grant
    Filed: June 2, 2010
    Date of Patent: June 24, 2014
    Assignee: The Regents of the University of California
    Inventors: Bradley F. Chmelka, George L. Athens, Robert Messinger
  • Publication number: 20140170383
    Abstract: This invention relates to the controlled realization of ordered superstructures of octapod-shaped colloidal nanocrystals, formed either in the liquid phase or on a solid substrate. These structures can be applied in many fields of technology.
    Type: Application
    Filed: August 2, 2011
    Publication date: June 19, 2014
    Applicant: Fondazione Istituto Italiano Di Tecnologia
    Inventors: Karol Miszta, Dirk Dorfs, Giovanni Bertoni, Liberato Manna, Rosaria Brescia, Sergio Marras, Roberto Cingolani, Roman Krahne, Yang Zhang, Fen Qiao
  • Patent number: 8753547
    Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of a Group 2 or Group 12 metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: June 17, 2014
    Assignee: Toyota Motor Engineering and Manufacturing North America, Inc.
    Inventors: Michael Paul Rowe, Li Qin Zhou
  • Publication number: 20140158950
    Abstract: Nanocrystals comprising organic ligands at surfaces of the plurality of nanocrystals are provided. The organic ligands are removed from the surfaces of the nanocrystals using a solution comprising a trialkyloxonium salt in a polar aprotic solvent. The removal of the organic ligands causes the nanocrystals to become naked nanocrystals with cationic surfaces.
    Type: Application
    Filed: November 12, 2013
    Publication date: June 12, 2014
    Applicant: The Regents of The University of California
    Inventors: Brett Anthony Helms, Delia Jane Milliron, Evelyn Louise Rosen, Raffaella Buonsanti, Anna Llordes
  • Patent number: 8747705
    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-zTez, where 0<x?0.5 and 0.8<z?2.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: June 10, 2014
    Assignee: LG Chem, Ltd.
    Inventors: Cheol-Hee Park, Tae-Hoon Kim
  • Patent number: 8747517
    Abstract: A method for isolating a nanoparticle is disclosed. A medium containing a nanoparticle is provided. The medium is acidified with a weak acid. An alcoholic solvent is added to induce the nanoparticle to precipitate from the medium. The precipitated nanoparticles are separated from the medium.
    Type: Grant
    Filed: June 30, 2009
    Date of Patent: June 10, 2014
    Assignee: Life Technologies Corporation
    Inventors: Joseph Bartel, Kari Haley, Berhane Measho
  • Patent number: 8747704
    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4-aSb12-zQz, where Q is at least one selected from the group consisting of O, S, Se and Te, 0<x?0.5, 0<a?1 and 0?z?4.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: June 10, 2014
    Assignee: LG Chem, Ltd.
    Inventors: Cheol-Hee Park, Tae-Hoon Kim
  • Patent number: 8747801
    Abstract: Disclosed herein are methods of preparing inorganic nanoparticles. In one aspect, the methods can comprise heating a reaction mixture comprising a C8 to C20 alkyl- or arylphosphonic acid and a source of cadmium or zinc to a temperature of greater than about 300° C.; adding to the reaction mixture an injection mixture comprising a C2 to C16 trialkyl- or triarylphosphine and a source of selenium, sulfur, or tellurium; and decreasing the temperature of the reaction mixture to less than about 300° C. Also disclosed herein are nanoparticles made from the disclosed methods. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
    Type: Grant
    Filed: November 16, 2012
    Date of Patent: June 10, 2014
    Assignee: Vanderbilt University
    Inventors: Michael J. Bowers, James R. McBride, Sandra J. Rosenthal
  • Publication number: 20140151612
    Abstract: Provided are nanoparticles passivated with a cationic metal-chalcogenide complex (MCC) and a method of preparing the same.
    Type: Application
    Filed: December 4, 2013
    Publication date: June 5, 2014
    Applicants: AJOU UNIVERSITY INDUSTRY COOPERATION FOUNDATION, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung-sang CHO, Sang-wook KIM, Tae-ho KIM, Dong-hyeok CHOI, Byoung-lyong CHOI