Abstract: Methods for orienting a plurality of sliver structures include applying at least one directional force to a group of sliver structures each having an orientation material applied to an edge to cause the plurality of sliver structures to orient in a common direction. The method may also include capturing the oriented sliver structures in a capture device to maintain the orientation of the sliver structures in the common direction. The oriented sliver structures may be used to form sub-assemblies such as solar array sub-assemblies that are used to generate solar power. Methods of applying an orientation material to sliver structures and resulting sliver structures are also disclosed.

Abstract: The present invention relates to coated binary and ternary nanoparticle chalcogenide compositions that can be used as copper zinc tin chalcogenide precursor inks. In addition, this invention provides processes for manufacturing copper zinc tin chalcogenide thin films and photovoltaic cells incorporating such thin films.

Abstract: Highly monodisperse nanocrystals (including CdSe, ZnSe, PbSe, Cu2-xSe, MnSe, Zn1-xCdxSe, CuInSe2, CuInSnSe2, CdTe, ZnTe, PbTe, etc) have been synthesized by using different “green” starting materials to prepare chalcogenide (Se and Te) precursors successfully. Air-sensitive compounds (alkylphosphine, such as trioctylphosphine (TOP) and tributylphosphine (TBP)) have been eliminated to use in the entire synthetic process. As surface coating agents, amphiphilic oligomer (polymaleic acid aliphatic alcohol ester) with different alkyl chain length has been utilized to form oligomer-coated water-soluble nanocrystals.

Abstract: A process of preparing a zinc chalcogenide includes providing a solution of 8-hydroxyquinoline; a zinc precursor; and a reaction solvent; isolating a precipitate from the solution; and calcining the precipitate to form the zinc chalcogenide. Additionally, a polymer composite may include a polymer, bis(8-hydroxyquinolinato)zinc, and elemental sulfur or bis(8-hydroxyquinolinato)zM, wherein M is a metal ion and the value of z is equivalent to the oxidation state of the metal ion.

Abstract: A process for forming thermoelectric nanoparticles includes the steps of providing a core material and a bismuth containing compound in a reverse micelle; providing a tellurium containing compound either in or not in a reverse micelle; reacting the bismuth containing compound with the tellurium containing compound in the presence of a base, forming a composite thermoelectric nanoparticle having a core and shell structure.

Abstract: Thermoelectric conversion materials, expressed by the following formula: Bi1-xMxCuwOa-yQ1yTeb-zQ2z. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Eu, Sm, Mn, Ga, In, Ti, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0?x<1, 0<w?1, 0.2<a<4, 0?y<4, 0.2<b<4 and 0?z<4. These thermoelectric conversion materials may be used for thermoelectric conversion elements, where they may replace thermoelectric conversion materials in common use, or be used along with thermoelectric conversion materials in common use.

Abstract: A photoelectric conversion device is provided and includes a photoelectric conversion layer containing a compound represented by the following formula (1). Formula (1): In the formula, Z1 represents an atomic group for forming a 5- or 6-membered nitrogen-containing heterocyclic ring; Za represents an atomic group for forming a 5- or 6-membered ring; R1 represents a hydrogen atom, an alkyl group, an alkenyl group, an aryl group or a heterocyclic group; L11 to L14 each represents a methine group which may have a substituent or may form a ring with another methine group; p1 represents 0 or 1; n1 represents an integer of 0 to 4 and when n1 is an integer of 2 or more, each L13 or L14 may be the same as or different from every other L13 or L14; M1 represents an ion for neutralizing the electric charge; and m1 represents a number necessary for neutralization of the electric charge; provided that a compound where Z1 is an atomic group forming a thiazoline nucleus or a thiazole nucleus is excluded.

Abstract: The invention discloses a mesoporous composite titanium oxide and a preparation method thereof, wherein the mesoporous composite titanium oxide material is composed of a mesoporous titanium oxide and an inorganic matter is composite on the outside surface and the wall of pores of the mesoporous titanium oxide; said inorganic matter contains at least one element selected from carbon, silicon, sulphur, phosphorus and selenium in an amount of 0.01%-25%, on amount of the element mass, of the mass of said mesoporous composite titanium oxide material; at least one most probable pore diameter of pore distribution of the mesoporous compound titanium oxide material is 3-15 nm, the specific surface area is 50-250 m2/g, and the pore volume is 0.05-0.4 m3/g.

Abstract: A secondary battery capable of improving the cycle characteristics and the storage characteristics is provided. The secondary battery includes a cathode, an anode, and an electrolytic solution. The anode contains an anode active material containing a material that is capable of inserting and extracting an electrode reactant and has at least one of metal elements and metalloid elements. Further, the electrolytic solution contains a solvent containing a sulfone compound having a structure in which —S(?O)2—S—C(?O)— bond is introduced to a benzene skeleton.

Abstract: In some embodiments, a nanocrystal described herein comprises a semiconductor material MX, wherein M is a group II or a group III element and X is a group V or a group VI element to provide a II/VI compound or a III/V compound, the nanocrystal having lateral dimensions and a vertical dimension having the shortest axis, wherein surfaces of the nanocrystal normal or substantially normal to the axis of the vertical dimension comprise a layer of M ions passivated by a counter ion chemical species.

Abstract: Tellurium-containing nanocrystallites are produced by injection of a precursor into a hot coordinating solvent, followed by controlled growth and annealing. Nanocrystallites may include CdTe, ZnTe, MgTe, HgTe, or alloys thereof. The nanocrystallites can photoluminesce with quantum efficiencies as high as 70%.

Abstract: Disclosed is a nonaqueous electrolyte secondary battery which is suppressed in increase of internal resistance, while having high capacity retention rate and small battery swelling even after a long use. Specifically disclosed is a method for manufacturing a nonaqueous electrolyte secondary battery, which is characterized by using a positive electrode containing a positive electrode active material having an ?-NaFeO2 crystal structure and the following chemical composition: LixMnaNibCocOd (wherein 0<x<1.3, a+b+c=1, 1.7?d?2.3), while satisfying |a?b|<0.03 and 0.33?c<1, a negative electrode, and a nonaqueous electrolyte containing an unsaturated sultone and a sulfate ester compound.

Abstract: A method for increasing the ZT of a semiconductor, involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the semiconductor, and recovering the semiconductor with an increased ZT.

Abstract: An iridium-containing group II-VI compound phosphor capable of efficiently emitting light without any economical problems or problems in energy efficiency or color purity is provided. A method for producing the phosphor is also provided. The phosphor comprises iridium and a group II-VI compound semiconductor, and the iridium is uniformly dispersed in surfaces of phosphor particles and in an inside of the phosphor particles. The method for producing the iridium-containing phosphor comprises firing an inorganic composition containing a group II-VI compound semiconductor and an iridium compound, and an iridium complex salt is used as the iridium compound.

Abstract: Various embodiments of the present invention create a cost-effective process that improves ZT value while enabling the TE materials to be scaled-up for mass production. Several embodiments of the invention include a thermoelectric material comprised of nanopowder and a nanomaterial. The nanomaterial may be in the form of a nanowire, nanofiber, nanotube, nanocrystal or similar form or combination of forms. Other embodiments include a method of creating a thermoelectric material through mixing and consolidating the nanomaterial and nanopowder into a solid. Additional embodiments may involve a thermoelectric module with P and N type semiconductors of the nanomaterial and nanopowder.

Abstract: A thermoelectric material includes powders having a surface coated with an inorganic material. The thermoelectric material includes a thermoelectric semiconductor powder and a coating layer on an outer surface of the thermoelectric semiconductor powders.

Abstract: According to various aspects, exemplary embodiments are provided of thermoelectric materials, which embodiments may have improved figure of merit. In one exemplary embodiment, a thermoelectric material generally includes bismuth telluride nanoparticles, which may be undoped or doped with at least one or more of silver, antimony, tin, and/or a combination thereof. The bismuth telluride nanoparticles may be dispersed in a matrix material comprising particulate bismuth telluride. Methods for making undoped and doped bismuth telluride nanoparticles are also disclosed, which may include a solvothermal method for making bismuth telluride nanoparticles having a size ranging from 1 to 200 nanometers.

Abstract: The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.

Abstract: A process for densifying a composite material is provided. In some instances, the process can reduce stress in a sintered component such that improved densification and/or properties of the component is provided. The process includes providing a mixture of a first material particles and second material particles, pre-sintering the mixture at a first pressure and a first temperature in order to form a pre-sintered component, and then crushing, grinding, and sieving the pre-sintered component in order to form or obtain a generally uniform composite powder. The uniform composite powder is then sintered at a second pressure and a second temperature to form a sintered component, the second pressure being greater than the second pressure.

Abstract: Disclosed is a cathode active material and a method to produce the same at low cost. The cathode powder comprises modified LiCoO2, and possibly a second phase which is LiM?O2 where M? is Mn, Ni, Co with a stoichiometric ratio Ni:Mn?1. The modified LiCoO2 is Ni and Mn bearing and has regions of low and high manganese content, where regions with high manganese content are located in islands on the surface. The cathode material has high cycling stability, a very high rate performance and good high temperature storage properties.

Abstract: A p-type group II-VI semiconductor may include a group IV element as a dopant. The group II-IV semiconductor may be Zn1-a-b-cMgaCdbBecO1-p-qSpSeq, wherein a=0˜1, b=0˜1, c=0˜1, p=0˜1 and q=0˜1.

Abstract: Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a solution of the same, a method for making the same from a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, imaging devices, phase change layers, and sensor devices.

Abstract: This invention relates to processes for a range of compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials for photovoltaic applications including devices and systems for energy conversion and solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. A compound may contain repeating units {MA(ER)(ER)} and {MB(ER)(ER)}, wherein each MA is Cu, each MB is In or Ga, each E is S, Se, or Te, and each R is independently selected, for each occurrence, from alkyl, aryl, heteroaryl, alkenyl, amido, silyl, and inorganic and organic ligands.

Abstract: Patterned photovoltaic cells, as well as related components and methods, are disclosed.

Abstract: The inventors demonstrate herein that homogeneous Ag-doped PbTe/Ag2Te composites exhibit high thermoelectric performance (˜50% over La-doped composites) associated with an inherent temperature induced gradient in the doping concentration caused by the temperature-dependent solubility of Ag in the PbTe matrix. This method provides a new mechanism to achieve a higher thermoelectric efficiency afforded by a given material system, and is generally applicable to other thermoelectric materials.

Abstract: This invention relates to compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. In particular, this invention relates to molecular precursor compounds and precursor materials for preparing photovoltaic layers including CAIGAS.

Abstract: The present disclosure discloses a titanium system composite comprising a lithium titanium composite oxide and a lithium compound cladding the lithium titanium composite oxide. The present disclosure further discloses a preparation method of the titanium system composite and an electrode material for batteries or capacitors comprising a titanium system composite.

Abstract: The present invention relates to a composite sintering materials using a carbon nanotube (including carbide nano particles, hereinafter the same) and a manufacturing method thereof, the method comprises the steps of: combining or generating carbon nanotubes in metal powers, a compacted product, or a sintered product; growing and alloying the carbon nanotubes by compacting or sintering the metal powers, the compacted product, or the sintered product; and strengthening the mechanical characteristics by repeatedly performing the sintering process and the combining process or the generating process of the carbon nanotubes.

Abstract: The present invention provides a method of forming a nanocrystal of the composition CdA, with A being S or Se. The method includes forming in a suitable solvent a solution of cadmium, or a compound thereof, in a form suitable for the generation of a nanocrystal. The solvent includes a compound selected from an ether and an amine. The method further includes bringing the solution to a temperature selected in the range from about 20° C. to about 200° C. The method also includes adding at the temperature selected in the range from about 20° C. to about 200° C. the element A in a form suitable for the generation of a nanocrystal. Thereby the forming of a nanocrystal of the composition CdA is allowed.

Abstract: A method of producing nanoparticles comprises effecting conversion of a nanoparticle precursor composition to the material of the nanoparticles. The precursor composition comprises a first precursor species containing a first ion to be incorporated into the growing nanoparticles and a separate second precursor species containing a second ion to be incorporated into the growing nanoparticles. The conversion is effected in the presence of a molecular cluster compound under conditions permitting seeding and growth of the nanoparticles.

Abstract: A process for forming thermoelectric nanoparticles includes the steps of forming a core material reverse micelle or micelle, adding a bismuth containing compound to the core material reverse micelle or micelle forming a reverse micelle or micelle having the bismuth containing compound dispersed therein, adding a tellurium containing compound with the formed micelle or reverse micelle in the presence of a reducing agent that alloys with the bismuth containing compound forming composite thermoelectric nanoparticles having a core and shell structure, and washing the core and shell nanoparticles in a solvent mixture including ammonium hydroxide, water and methanol wherein the core and shell nanoparticles remain un-agglomerated and have a particle size of from 1-25 nanometers.

Abstract: A process for forming a thermoelectric component having optimum properties is provided. The process includes providing a plurality of core-shell nanoparticles, the nanoparticles having a core made from silica, metals, semiconductors, insulators, ceramics, carbon, polymers, combinations thereof, and the like, and a shell containing bismuth telluride. After the core-shell nanoparticles have been provided, the nanoparticles are subjected to a sintering process. The result of the sintering provides a bismuth telluride thermoelectric component having a combined electrical conductivity and Seebeck coefficient squared of greater than 30,000 ?V2S/mK2 at 150° C.

Abstract: A method for producing uniform powder blends may include a multi-pass riffling process.

Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

Abstract: An alloyed semiconductor quantum dot comprising an alloy of at least two semiconductors, wherein the quantum dot has a homogeneous composition and is characterized by a band gap energy that is non-linearly related to the molar ratio of the at least two semiconductors; a series of alloyed semiconductor quantum dots related thereto; a concentration-gradient quantum dot comprising an alloy of a first semiconductor and a second semiconductor, wherein the concentration of the first semiconductor gradually increases from the core of the quantum dot to the surface of the quantum dot and the concentration of the second semiconductor gradually decreases from the core of the quantum dot to the surface of the quantum dot; a series of concentration-gradient quantum dots related thereto; in vitro and in vivo methods of use; and methods of producing the alloyed semiconductor and concentration-gradient quantum dots and the series of quantum dots related thereto.

Abstract: A nanoscale sensing device from different types of nanoparticles (NPs) and nanowires (NWs) connected by molecular springs. The distance between the nanoscale colloids reversibly changes depending on conditions or analyte concentration and can be evaluated by fluorescence measurements.

Abstract: A thermoelectric material including: a nanostructure; a discontinuous area disposed in the nanostructure, and an uneven portion disposed on the nano structure.

Abstract: Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

Abstract: Disclosed herein is a method for synthesizing a nanoparticle using a carbene derivative. More specifically, provided is a method for synthesizing a nanoparticle by adding one or more precursors to an organic solvent to grow a crystal, wherein a specific carbene derivative is used as the precursor.

Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

Abstract: The present invention relates to a process for manufacturing a colloidal material, to colloidal materials obtainable by this process and to uses of said colloidal material for the manufacture of optic devices. The colloidal material obtainable by the process of the present invention is of formula AnXm, wherein A is an element selected from groups II, III or IV of the periodic table, wherein X is a metal selected from groups V or VI of the periodic table, and wherein, in the selection of the pair (A, X), the groups of the periodic table of A and X, respectively, are selected from the following combinations: (group II, group VI), (group III, group V) or (group IV, group VI); and wherein n and m are such that AnXm is a neutral compound. For example, the colloidal compound obtainable by the process of the present invention may be CdS, In P, or PbS. Other examples are provided below.

Abstract: A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.

Abstract: Provided is a method for preparing a chalcogenic hybrid nanostructure including: (a) adding a chalcogenic nanostructure, an electron donor and an electron acceptor to a medium containing metal-reducing bacteria to prepare a reaction mixture, the electron acceptor including a chalcogen element; and (b) performing a metal reduction reaction using the prepared reaction mixture to prepare a chalcogenic hybrid nanostructure with the chalcogen element of the electron acceptor incorporated. The present disclosure provides a new method allowing preparation of a chalcogenic hybrid nanostructure comprising three or more components using metal-reducing bacteria. The disclosure allows preparation of a nanostructure in a more economical and eco-friendly manner. The disclosure also allows control of morphological, physical/chemical and electrical properties of the prepared nanostructure. In addition, the present disclosure provides a nanomaterial that can be useful in nanoelectronic and optoelectronic devices.

Abstract: A method for preparing a CIGS ink without a surfactant or a binder is provided. In accordance with the method of the present invention, an initial CIGS mixture powder is obtained by mixing two component powder, three component powder or four component powder of copper, indium, gallium, and selenium in predetermined proportions. Then additional selenide powder is added and mixed into the initial CIGS mixture powder to form a final CIGS mixture powder. Then, a certain proportion of solvent is added into the final CIGS mixture powder, and the mixture powder is then stirred to obtain a CIGS ink in a predetermined copper/indium/gallium/selenium ratio as desired.

Abstract: A method of synthesizing doped semiconductor nanocrystals.

Abstract: Dielectric compositions that include compound of the formula [(M?)1?x(A?)x][(M?)1?y?z,(B?)y(C?)z]O3??(VO)? and protonated dielectric compositions that include a protonated dielectric compound within the formula [(M?)1?x(A?)x](M?)1?y?z(B?)y(C?)z]O3??+h(Vo)?(H*)2h are disclosed. Composite materials that employ one or more of these dielectric compounds together with an electrolyte also are disclosed. Composite material that employs one or more of these dielectric compounds together with an electrochemally active material also are disclosed.

Abstract: Embodiments of the present invention are directed to methods of producing PbSexY1-x alloys and methods of producing PbSe/PbY core/shell nanowires. The method of producing PbSexY1-x alloys comprise providing PbSe nanowires, producing a PbY solution where Y?S or Te, adding the PbSe nanowires to an growth solution, and producing PbSexY1-x, nanowire alloys by adding the PbY solution to the heated growth solution comprising PbSe nanowires.

Abstract: A radiation converter material includes a semiconductor material used for directly converting radiation quanta into electrical charge carriers. In at least one embodiment, the semiconductor material includes a dopant in a dopant concentration and defect sites produced in a process-dictated manner in such a way that the semiconductor material includes an ohmic resistivity in a range of between 5·107 ?·cm and 2·109 ?·cm. Such a radiation converter material is particularly well matched to the requirements in particular in human-medical applications with regard to the high flux rate present and the spectral distribution of the radiation quanta. In at least one embodiment, the invention additionally relates to a radiation converter and a radiation detector, and a use of and a method for producing such a radiation converter material.

Abstract: Low-cost copper nanoparticle inks that can be annealed onto paper substrate for RFID antenna applications, using substituted dithiocarbonates as stabilizers during copper nanoparticle ink production.

Abstract: A method for isolating a nanoparticle is disclosed. A medium containing a nanoparticle is provided. The medium is acidified with a weak acid. An alcoholic solvent is added to induce the nanoparticle to precipitate from the medium. The precipitated nanoparticles are separated from the medium.