Abstract: A material and method for producing mesostructured materials with multiple functionalities that are independently adjustable and collectively optimizable is provided. The method uses a series of discrete synthesis steps under otherwise mutually incompatible conditions, e.g., from acidic, alkaline, and/or non-aqueous solutions, allows different functionalities to be introduced to the materials and optimized. To illustrate the method, cubic mesoporous silica films were prepared from strongly acidic solutions that were separately functionalized under highly alkaline conditions to incorporate hydrophilic aluminosilica moieties and under non-aqueous conditions to introduce perfluorosulfonic-acid surface groups.

Abstract: This invention relates to the controlled realization of ordered superstructures of octapod-shaped colloidal nanocrystals, formed either in the liquid phase or on a solid substrate. These structures can be applied in many fields of technology.

Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of a Group 2 or Group 12 metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles.

Abstract: Nanocrystals comprising organic ligands at surfaces of the plurality of nanocrystals are provided. The organic ligands are removed from the surfaces of the nanocrystals using a solution comprising a trialkyloxonium salt in a polar aprotic solvent. The removal of the organic ligands causes the nanocrystals to become naked nanocrystals with cationic surfaces.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4-aSb12-zQz, where Q is at least one selected from the group consisting of O, S, Se and Te, 0<x?0.5, 0<a?1 and 0?z?4.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-zTez, where 0<x?0.5 and 0.8<z?2.

Abstract: Disclosed herein are methods of preparing inorganic nanoparticles. In one aspect, the methods can comprise heating a reaction mixture comprising a C8 to C20 alkyl- or arylphosphonic acid and a source of cadmium or zinc to a temperature of greater than about 300° C.; adding to the reaction mixture an injection mixture comprising a C2 to C16 trialkyl- or triarylphosphine and a source of selenium, sulfur, or tellurium; and decreasing the temperature of the reaction mixture to less than about 300° C. Also disclosed herein are nanoparticles made from the disclosed methods. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Abstract: A method for isolating a nanoparticle is disclosed. A medium containing a nanoparticle is provided. The medium is acidified with a weak acid. An alcoholic solvent is added to induce the nanoparticle to precipitate from the medium. The precipitated nanoparticles are separated from the medium.

Abstract: Provided are nanoparticles passivated with a cationic metal-chalcogenide complex (MCC) and a method of preparing the same.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-zXnQ?z, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q? is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2 and 0<a?1.

Abstract: Provided is a phosphor for a dispersion-type EL that may be manufactured in a simple process and may provide stable, high brightness and light emission efficiency. The phosphor for a dispersion-type EL according to the present invention includes a mixture of an electron-accepting phosphor particle (4A) and an electron-donating phosphor particle (4B). The electron-accepting phosphor particle (4A) includes a base particle and an acceptor element added thereto, and the electron-donating phosphor particle (4B) includes a base particle and a donor element added thereto. For example, the base particle is a ZnS particle, the acceptor element is Cu, and the donor element is Cl or Al.

Abstract: A plating bath for electroless deposition of gold and gold alloy layers on such silicon-based substrates, includes Na(AuCl4) and/or other gold (III) chloride salts as a gold ion source. The bath is formed as a binary bath solution formed from mixing first and second bath components. The first bath component includes gold salts in concentrations up to 40 g/L, boric acid, in amounts of up to 30 g/L, and a metal hydroxide in amounts up to 20 g/L. The second bath component includes an acid salt, in amounts up to 25 g/L, sodium thiosulfate in amounts up to 30 g/L, and suitable acid, such as boric acid in amounts up to 20 g/L.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnQ?z, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q? is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2; 0?a?1, 0<b?3 and 0<n+z+b<12.

Abstract: This invention relates to compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. A compound may contain repeating units {MB(ER)(ER)} and {MB(ER)(ER)}, wherein MA is Ag, each MB is In or Ga, each E is S, Se, or Te, and each R is independently selected, for each occurrence, from alkyl, aryl, heteroaryl, alkenyl, amido, silyl, and inorganic and organic ligands.

Abstract: An encapsulating composition for a light emitting element, a light emitting diode (LED) and a liquid crystal display device (LCD) are provided. A silicone-cured product included as a main ingredient and a conductivity-providing agent having excellent compatibility and capable of providing superior conductivity can be used to significantly reduce the surface resistivity of the silicone-cured product. Therefore, the encapsulating composition for a light emitting element, the LED and the LCD can be useful in solving the problems regarding attachment of a foreign substance such as dust due to static electricity, and degradation of transparency since the composition has low surface resistivity when used as a semiconductor encapsulation material for an LED, and also in providing a cured product having excellent properties such as light resistance, heat resistance, durability and optical transparency.

Abstract: Thermoelectric conversion materials, expressed by the following formula: Bi1-xMxCuwOa-yQ1yTeb-zQ2z. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0?x<1, 0<w?1, 0.2<a<4, 0?y<4, 0.2<b<4 and 0?z<4. These thermoelectric conversion materials may be used for thermoelectric conversion elements, where they may replace thermoelectric conversion materials in common use, or be used along with thermoelectric conversion materials in common use.

Abstract: This invention relates to compounds and compositions used to prepare semiconductor and optoelectronic materials and devices. This invention provides a range of compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to molecular precursor compounds, precursor materials and methods for preparing photovoltaic layers and thin films thereof.

Abstract: Processes for making a photovoltaic layer on a substrate by depositing a first layer of an ink onto the substrate, wherein the ink contains one or more compounds having the formula MB(ER)3, wherein MB is In, Ga, or Al, E is S or Se, and depositing a second layer of one or more copper chalcogenides or a CIGS material.

Abstract: A deposition process to form a conformal phase change material film on the surface of a substrate to produce a memory device wafer comprises providing a substrate to a chamber of a deposition system; providing an activation region; introducing one or more precursors into the chamber upstream of the substrate; optionally introducing one or more co-reactants upstream of the substrate; activating the one or more precursors; heating the substrate; and depositing the phase change material film on the substrate from the one or more precursors by chemical vapor deposition. The deposited phase change material film comprises GexSbyTezAm in which A is a dopant selected from the group of N, C, In, Sn, and Se. In one implementation, the process is carried out to form GST films doped with carbon and nitrogen, to impart beneficial film growth and performance properties to the film.

Abstract: According to one embodiment, a crystal includes thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants. According to another embodiment, a system includes a monolithic crystal including thallium bromide (TlBr), one or more positively charged dopants, and one or more negatively charged dopants; and a detector configured to detect a signal response of the crystal.

Abstract: Variable resistance memory compositions and devices exhibiting superior data retention characteristics at elevated temperature. The compositions are composite materials that include a variable resistance component and an inert component. The variable resistance component may include a phase-change material and the inert component may include a dielectric material. The phase-change material may include Ge, Sb, and Te, where the atomic concentration of Sb is between 3% and 16% and/or the Sb/Ge ratio is between 0.07 and 0.68 and/or the Ge/Te ratio is between 0.6 and 1.1 and/or the concentration of dielectric component (expressed as the sum of the atomic concentrations of the constituent elements thereof) is between 5% and 50%. The compositions exhibit high ten-year data retention temperatures and long data retention times at elevated temperatures.

Abstract: The invention relates to a novel process for preparing lithium sulfide and to the use thereof, wherein a reaction of lithium-containing strong bases with hydrogen sulfide is undertaken in an aprotic organic solvent within the temperature range from ?20 to 120° C. under inert conditions. The lithium sulfide obtained by the process is used as a positive material in a galvanic element or for the synthesis of Li ion-conductive solids, especially for the synthesis of glasses, glass ceramics or crystalline products.

Abstract: A practical and environmentally-friendly method, i.e. the high temperature-mechanical mixing by using an internal mixing device and a two-roll open milling device is used to produce the carbon blacks-free electrically conductive sulfur-vulcanised rubber blends of solid poly(butadiene-co-acrylonitrile) and solid sulfonic acid doped polyaniline. The addition of sulfur vulcanization system does not affect the electrical properties of the vulcanised blends. All vulcanised blends prepared by using this method show useful electrical conductivities up to the order of 10?2 S/cm, good tensile strengths up to 18.0 MPa and colorable with the addition of a whitening agent. As a result, they have good potential to be used for manufacturing any antistatic products, electrostatic discharge or dissipative products and electromagnetic or radio frequency interferences shielding products.

Abstract: An electroconductive particle having a core particle and a tin oxide-containing coating layer on the core particle. The tin oxide of the coating layer has a crystallite size of 70 to 200 ?. The electroconductive particle preferably has a ratio of R3 to R1 of 1 to 250, wherein R1 and R3 are respective surface resistivities of electroconductive films formed of a coating composition containing the electroconductive particle and prepared by 1-hour dispersing and 3-hour dispersing, respectively. The coating layer preferably comprises dopant element-free, electroconductive tin oxide.

Abstract: This invention relates to a process for the phase-controlled synthesis of ternary and quaternary mixed-metal sulfide nanoparticles by reacting soft metal ions with hard metal ions in a high-boiling organic solvent in the presence of a complexing and activating ligands to control the reactivity of the metal ions. Ternary and quaternary mixed metal sulfides nanoparticles of copper, sulfur, and iron, aluminum, tin, and silicon are preferred. This invention also relates to the phase controlled preparation of polymorphs of bornite nanoparticles and the phase controlled preparation of stabilized ?- and ?-chalconite nanoparticles.

Abstract: A method for preparing an electrostatic dissipative polymer and a blend of a thermoplastic polymer and the ESD polymer is disclosed. The method for preparing an electrostatic dissipative polymer includes the step of polymerizing the electrostatic dissipative polymer in the presence of a reactive solvent and lithium salt dissolved in the reactive solvent, wherein the amount of the reactive solvent is from 0.1 to 20 weight parts based on 100 weight parts of the produced electrostatic dissipative polymer, the amount of lithium salt is from 0.1 to 5 weight parts based on 100 weight parts of the produced electrostatic dissipative polymer, and the reactive solvent is aliphatic glycol having from 2 to 8 carbon atoms and having a primary alcohol group, or aromatic glycol having from 6 to 10 carbon atoms.

Abstract: This invention provides compositions and the processes for preparing the compositions that are useful for preparing films of CZTS and its selenium analogues on a substrate. Such films are useful in preparing photovoltaic devices. This invention also provides processes for preparing a semiconductor layer comprising CZTS/Se microparticles embedded in an inorganic matrix. This invention also provides processes for making a photovoltaic devices and the photovoltaic devices so produced.

Abstract: A composition includes a chemical reaction product defining a first surface and a second surface, characterized in that the chemical reaction product includes a segregated phase domain structure including a plurality of domain structures, wherein at least one of the plurality of domain structures includes at least one domain that extends from a first surface of the chemical reaction product to a second surface of the chemical reaction product. The segregated phase domain structure includes a segregated phase domain array. The plurality of domain structures includes i) a copper rich. indium/gallium deficient Cu(In,Ga)Se2 domain and ii) a copper deficient, indium/gallium rich Cu(In,Ga)Se2 domain.

Abstract: There is disclosed a minute structure including a sulfur compound and a silicon oxide. There is also disclosed a write-once information recording medium including a substrate and a recording layer formed of a mixed inorganic material and deposited on the substrate, wherein the mixed inorganic material contains a sulfur compound and a silicon oxide.

Abstract: A method of controlling stoichiometry in a multicomponent material includes providing a solid sample comprising N elements and having a first composition in a main chamber, which is connected to at most N?1 reservoirs. Each of the reservoirs is configured to contain a vapor comprising one of the N elements, where N?2. The solid sample is heated to a first temperature in the main chamber, and each of the reservoirs is heated to a first reservoir temperature (T1, T2 . . . TN-1) sufficient to achieve a predetermined vapor pressure of the vapor contained therein. The reservoirs are placed in gaseous communication with the main chamber, and thermodynamic equilibrium is achieved between the vapor from each of the reservoirs and the solid sample in the main chamber. Consequently, a stoichiometry of the solid sample is changed to arrive at a second composition thereof.

Abstract: This invention relates to compounds and compositions used to prepare semiconductor and optoelectronic materials and devices. This invention provides a range of compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to molecular precursor compounds and precursor materials for preparing photovoltaic layers.

Abstract: This invention relates to a range of compounds, inks and compositions used to make materials for photovoltaics, including solar cells. In particular, this invention relates to inks containing precursor compounds, as well as the precursor compounds, and materials for preparing photovoltaic layers. The precursor compounds and inks contain compounds having the formula MB(ER)3 wherein MB is In, Ga or Al, which can be deposited and converted to a material form.

Abstract: A battery capable of improving the cycle characteristics and the swollenness characteristics is provided. The battery includes a cathode, an anode, and an electrolytic solution. The electrolytic solution is impregnated in a separator provided between the cathode and the anode. The anode has a coat on an anode active material layer provided on an anode current collector. The coat contains a metal salt. The metal salt has a hydroxyl group and at least one of a sulfonic acid group and a carboxylic acid group. Thereby, lithium ions are easily inserted in the anode and extracted from the anode, and decomposition of the electrolytic solution is prevented.

Abstract: An apparatus includes a manifold with a chamber for mixing multiple reactants. Gases are jetted into the manifold by a plurality of inlet injectors. The inlet injectors are arranged such that the gases passing into the manifold impinge on each other at a common point to form a mixture. The mixture passes through a plurality of holes in one side of the manifold into a deposition chamber where the mixture of gases impinges on additional gases at a common point to provide a reaction resulting in deposition of solid materials in the deposition chamber. The solid materials are free-standing.

Abstract: This invention relates to methods and articles using a range of compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials for photovoltaic applications including devices and systems for energy conversion and solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. A compound may contain repeating units {MA(ER)(ER)} and {MB(ER)(ER)}, wherein each MA is Cu, each MB is In or Ga, each E is S, Se, or Te, and each R is independently selected, for each occurrence, from alkyl, aryl, heteroaryl, alkenyl, amido, silyl, and inorganic and organic ligands.

Abstract: This invention includes processes for making a photovoltaic absorber layer having a predetermined stoichiometry on a substrate by depositing a precursor having the predetermined stoichiometry onto the substrate and converting the deposited precursor into a photovoltaic absorber material. This invention further includes processes for making a photovoltaic absorber layer having a predetermined stoichiometry on a substrate by (a) providing a polymeric precursor having the predetermined stoichiometry; (b) providing a substrate; (c) depositing the precursor onto the substrate; and (d) heating the substrate.

Abstract: A radiation detector made of High Purity Germanium (HPGe) has been specially machined to be this invented multilayer Inter-Coaxial configuration. With this special configuration, extra large volume HPGe detectors of diameters to be 6 inches, 9 inches, and even 12 inches, can be produced with current achievable HPGe crystal purity and quality, in which the entire detector crystal will be depleted and properly over biased for effective photo-induced signal collection with just less than 5000V bias applied. This invention makes extra large efficiency of 200%, 300%, and maybe even higher than 500% possible with HPGe gamma ray detectors with reasonable great resolution performances procurable based on current HPGe crystal supply capability. The invention could also be applied to any other kind of semiconductor materials if any of them could be purified enough for this application in the future.

Abstract: The invention relates to a solid material with the following formula (A): (Cu+1a-u; Ag+1u; Zn+2b-v-(y/2); Cd+2v; Sn+4c-w-(y/2); 1X+4w; 2X+3y; S?2x)(A), in which the solid material: is in divided state in the form of particles having a mean equivalent diameter of 15 nm to 400 nm; has, according to X-ray diffraction analysis of the solid material, a unique crystalline structure; is suitable for forming a stable dispersion of at least one solid material with formula (A) in a liquid, referred to as dispersion liquid, made up of at least one compound with a value of ?p higher than 8 and a value of ?H higher than 5.

Abstract: Disclosed are a thermoelectric material and a method of forming a thermoelectric material having an optimal stoichiometry, the method including obtaining a first precursor material, wherein the first precursor material is an antimony precursor, and obtaining a second precursor material, wherein the second precursor is chosen from the group consisting of a tellurium precursor and a selenium precursor. The method further includes combining the precursor materials, heating the combination of precursor materials, and isolating a plurality of semiconductor nanocrystals from the heated precursor materials.

Abstract: The present invention relates to a composite sintering materials using a carbon nanotube (including carbide nano particles, hereinafter the same) and a manufacturing method thereof, the method comprises the steps of: combining or generating carbon nanotubes in metal powders, a compacted product, or a sintered product; growing and alloying the carbon nanotubes by compacting or sintering the metal powders, the compacted product, or the sintered product; and strengthening the mechanical characteristics by repeatedly performing the sintering process and the combining process or the generating process of the carbon nanotubes.

Abstract: A thermoelectric material including: a thermoelectric matrix; and a plurality of metal nanoparticles disposed in the thermoelectric matrix, wherein a difference between a work function of thermoelectric matrix and a work function of a metal particle of the metal nanoparticles is about ?1.0 electron volt to about 1.0 electron volt.

Abstract: A nanoscale heterostructure tellurium-based nanowire structure, including a rod-like tellurium nanowire structure and a metal telluride agglomeration connected to the rod-like nanowire structure. The metal telluride agglomeration may have an octahedral shape or a platelet shape. The agglomeration structures are selected from the group comprising lead telluride, cadmium telluride, bismuth telluride, and combinations thereof.

Abstract: This invention relates to molecular precursors and processes for preparing coated substrates and films of copper indium gallium sulfide/selenides (CIGS/Se). Such films are useful in the preparation of photovoltaic devices. This invention also relates to processes for preparing coated substrates and for making photovoltaic devices.

Abstract: A method of producing a Group II-VI compound semiconductor. The method involves generating a pulsed electrical discharge plasma between metallic electrodes in sulfur to produce a Group II-VI compound semiconductor. A method of producing a Group II-VI compound semiconductor phosphor using a pulsed electrical discharge plasma. A hexagonal crystal of Group II-VI compound semiconductor composed of a plurality of twin crystals.

Abstract: A method for preparing an electrostatic dissipative polymer and a blend of a thermoplastic polymer and the ESD polymer is disclosed. The method for preparing an electrostatic dissipative polymer includes the step of polymerizing the electrostatic dissipative polymer in the presence of a reactive solvent and lithium salt dissolved in the reactive solvent, wherein the amount of the reactive solvent is from 0.1 to 20 weight parts based on 100 weight parts of the produced electrostatic dissipative polymer, the amount of lithium salt is from 0.1 to 5 weight parts based on 100 weight parts of the produced electrostatic dissipative polymer, and the reactive solvent is aliphatic glycol having from 2 to 8 carbon atoms and having a primary alcohol group, or aromatic glycol having from 6 to 10 carbon atoms.

Abstract: This invention includes processes for making a photovoltaic absorber layer having a predetermined stoichiometry on a substrate by depositing a precursor having the predetermined stoichiometry onto the substrate and converting the deposited precursor into a photovoltaic absorber material. This invention further includes processes for making a photovoltaic absorber layer having a predetermined stoichiometry on a substrate by (a) providing a polymeric precursor having the predetermined stoichiometry; (b) providing a substrate; (c) depositing the precursor onto the substrate; and (d) heating the substrate.

Abstract: This invention provides a transition metal complex of formula MXY2Z and a manufacturing method thereof, wherein M is selected from iron, ruthenium, and osmium; X represents a ligand shown in formula (II) wherein R1 and R1? are independently selected from COOH, PO3H2, PO4H2, SO3H2, SO4H2, and derivatives thereof; Y is selected from H2O, Cl, Br, CN, NCO, NCS, and NCSe; Z represents a bidentate ligand having at least two fluorinated chains. In addition, this invention also provides photovoltaic cells and a manufacturing method thereof.

Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of a Group 2 or Group 12 metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles.

Abstract: A nanocomposite thermoelectric conversion material is provided in which crystal grains of a thermoelectric material parent phase are stacked in a laminar configuration and are oriented, the width of the crystal grains perpendicular to the direction of this orientation is in a range from at least 5 nm to less than 20 nm, and insulating nanoparticles are present dispersed at the grain boundaries. Also provided is a method of producing a nanocomposite thermoelectric conversion material, by which the crystal grains of a thermoelectric material parent phase are oriented by cooling a material under compression at a cooling rate of at least 1° C./minute to less than 20° C./minute. A thermoelectric conversion element that contains the aforementioned nanocomposite thermoelectric conversion material is also provided.

Abstract: The present invention relates to a process to make a chalcogen-containing semiconductor comprising copper, zinc and tin and to inks used in the process. The inks comprise at least one copper, zinc or tin source which is elemental particles of the particular metal.